JP5125038B2 - Resist stripping apparatus and resist stripping method - Google Patents

Description

  The present invention relates to a resist stripping apparatus and a resist stripping method, and in particular, in a semiconductor thin film forming process, a resist stripping apparatus and resist stripping for stripping a thin film, for example, an organic resist, which is formed on a substrate surface of a semiconductor wafer or the like and then becomes unnecessary It is about the method.

  As a method for peeling and removing an unnecessary thin film (organic dry film, hereinafter referred to as “DF”) in a semiconductor thin film forming step, a dip peeling method in which a wafer is immersed in a predetermined peeling solution for a predetermined time and a predetermined peeling solution is used. A shower peeling method in which a wafer is blown off to peel off and a peeling method combining these peeling methods are already known.

  Among these stripping methods, the dip stripping method stores a predetermined amount of stripping solution in a stripping tank heated to a predetermined temperature (40 to 80 ° C.) and stored in the stored stripping solution for a predetermined time (30 to 30). By immersing in a stationary state (50 minutes), the DF on the wafer surface is swollen, and by this swelling, the sheet-like DF is finely decomposed and the interfacial adhesive force of the DF is reduced and peeled off.

  In the shower peeling method, a wafer (or a printed circuit board, a glass substrate) is moved at a predetermined conveyance speed (0.10 to 0.60 m / min), and a predetermined temperature (40 to 100 ° C.) is applied to the moving wafer. DF is peeled off by spraying a heated stripping solution (see Patent Documents 1 and 2 below). For example, the resist removing apparatus described in the following Patent Document 1 moves a printed board, sprays a peeling solution onto the moving printed board to peel off the DF, and applies the peeled and removed resist to an attaching means made of a nonwoven fabric. It is made to adhere and collect.

Furthermore, the peeling method which combined these dip peeling methods and the shower peeling method is described in the following patent document 3, for example. FIG. 10 is a cross-sectional view of an essential part of the resist stripping apparatus described in Patent Document 3 below.
The resist stripping device 20 stores a wafer cassette 24 that holds a plurality of compound semiconductor wafers W, and stores the wafer W and stripping liquid held in the wafer cassette 24 to strip the organic resist on the wafer. A stripping tank 21, a chemical solution supply source 22 that supplies the stripping liquid to the stripping tank 21, and a circulation path that collects and circulates the used stripping liquid in the stripping tank 21 are provided.

In this peeling apparatus, the organic resist (organic dry film) is peeled by the following process.
First, a replacement stripping liquid (hereinafter referred to as “substitution liquid”) 26 is supplied from the chemical liquid supply source 22 to the chemical liquid supply port 23 a through the pipe L, and a predetermined amount of stripping liquid is stored in the stripping tank 21. The wafer W is inserted into the stored peeling tank 21 while being stored in the wafer cassette 24 and placed on the rotating roller 25. Next, the rotation of the rotating roller 25 rotates the wafer W, and the wafer W is cleaned. Thereafter, all of the replacement liquid 26 stored in the peeling tank 21 is discharged from the chemical liquid waste outlet 23 b and stored in the buffer tank 27 while the wafer W is rotated. At the same time, the chemical waste liquid 28 stored in the buffer tank 27 is sucked up by the high-pressure pump 29 and fed to the high-pressure spray nozzle 31 through the mesh filter 30 for dust trap. From the high-pressure spray nozzle 31, the fed stripping solution is sprayed onto both the front and back surfaces of the rotating wafer W, and the resist remaining on the front and back surfaces of the wafer W is removed. The rotation of the wafer W is continued until the wafer cassette 24 is inserted into the peeling tank 21 and then carried out of the peeling tank 21.

JP 2001-53419 A (paragraphs [0013], [0024], FIGS. 1 and 4) Japanese Patent Laying-Open No. 2001-7017 (paragraphs [0027] to [0033], FIG. 1) JP 2004-327962 A (paragraphs [0017] to [0027], FIG. 2 and FIG. 3)

  Among the above thin film peeling and removal methods for organic resists that do not have as large a peeled piece as DF, the dip peeling method immerses the wafer in a peeling solution for a relatively long time, so when applied to a wafer with DF, the wafer surface DF easily swells. However, since the DF peeling force is caused by the chemical caused by the stripping solution, DF residues are likely to remain on the wafer surface, and the stripped pieces including the residue settle in the stripping tank and the stripped pieces can be recovered. Have difficulty. Furthermore, since the DF residue adheres to the carrier holding the wafer, an operation for cleaning the DF residue is required, and there is a limit to increasing the work efficiency.

  Similarly, the shower peeling method of Patent Documents 1 and 2 that targets an organic resist whose release piece is not as large as that of DF has both a chemical peeling force by a peeling solution and a physical peeling force by a shower on the wafer. As a result, the DF residue hardly remains on the wafer surface and the processing efficiency is improved. However, since the stripping solution is merely sprayed onto the moving wafer, the stripping solution is not sufficiently absorbed by the wafer, and therefore DF is difficult to swell. Thus, when the degree of swelling is small, DF decomposition is difficult to proceed, and as a result, the processing time must be set longer.

  On the other hand, the peeling method combined with the dip peeling method and the shower peeling method of Patent Document 3 described above is processed by immersing the wafer in a peeling solution, so that the organic resist is appropriately swollen, and the peeling solution is sprayed onto the wafer. Therefore, physical peeling force is added and peeling efficiency is increased. However, the resist strips that are the subject of the present invention to be stripped from the wafer are of various shapes, large and small, and the amount of the strips is large. However, not only does it deposit on the bottom of the stripping tank and plugs the chemical liquid waste port, causing clogging of the liquid waste port, but the conventional circulating method cannot recover the stripped pieces. When such clogging occurs, the operation of the peeling device must be stopped and the peeling pieces and the like must be removed each time, so that the processing efficiency is greatly reduced. Therefore, this peeling apparatus is suitable for a process in which only a small amount of small peel pieces are generated, but for a process in which a large amount of peel pieces are generated in a large amount, a peel piece or the like is provided for each wafer processing lot. Since it must be collected, the processing efficiency is low and it cannot be used for such processing. In addition, although the removal apparatus of the said patent document 1 is made to adhere the removed resist to a nonwoven fabric and collect | recovering, such a method cannot be applied to the peeling apparatus of the said patent document 3 on a structure.

  The present invention has been made to solve the above-described problems of the prior art, and an object of the present invention is to provide a resist stripping apparatus and a resist stripping method in which a dip stripping method, a shower stripping method, or a combination of both, and stripping. An object of the present invention is to provide a resist stripping apparatus and a resist stripping method capable of smoothly discharging and collecting strips from a stripping tank even when the shape of the strips is large and a large amount is generated.

In order to achieve the above object, an invention relating to a resist stripping apparatus according to claim 1 includes a substrate holding unit that holds a substrate to be processed, a substrate to be processed and a stripping solution that are held by the substrate holding unit. A resist stripping apparatus comprising a stripping tank for stripping unnecessary resist on a substrate to be processed, a chemical supply means for supplying a stripping solution to the stripping tank, and a recovery device for collecting used stripping liquid in the stripping tank In
The peeling tank has a discharge hole having an opening large enough to allow a peeling piece peeled from the substrate to be processed to pass through at the bottom of the peeling tank, and the discharge hole is closed with an openable / closable lid. The body is connected to an opening / closing mechanism, the lid is opened by the opening / closing mechanism, and the peeling piece deposited on the bottom of the peeling tank is discharged from the discharge hole together with the peeling liquid to the outside of the peeling tank, and the recovery device Has a discharge port for discharging the stripping liquid, the stripping piece, etc., and receives the stripping liquid, stripping piece, etc. that overflows from the stripping tank or is discharged from the discharge hole and moves it to the discharge port. and sink that an opening is formed under the outlet of the sink, and a storage tank in which temporarily stripping solution or the like sent from the outlet of the sink, the are arranged in the storage tank extracting said release strip from the release liquid And Llorca means, characterized in that said rectifying mechanism disposed within the filtration means is a gradual flow of the stripping solution, in being configured.

  According to a second aspect of the present invention, in the resist stripping apparatus according to the first aspect, the lid is pivotally supported by a support shaft at a location close to the discharge hole, and the support shaft is connected to the opening / closing mechanism. It is characterized by being.

According to a third aspect of the present invention, in the resist stripping apparatus according to the first or second aspect , the substrate holding means is connected to a swing mechanism that swings the substrate to be processed in the stripping tank. It is characterized by that.

According to a fourth aspect of the present invention, in the resist stripping apparatus according to any one of the first to third aspects, the filtering means does not remove strips in multiple stages according to the size of the strips. It is characterized by comprising a plurality of filtering means having different mesh roughness.

The invention according to claim 5 is the resist stripping apparatus according to any one of claims 1 to 4 , wherein the stripping tank and the storage tank are connected by a pipe having a predetermined thickness. A circulation path is formed in which the stripping liquid discharged from the tank and stored in the storage tank is filtered and heated to a predetermined temperature and returned to the stripping tank.

The invention according to claim 6 is the resist stripping apparatus according to claim 5 , wherein a pump for pressurizing and feeding the recovered stripping liquid from the storage tank to the circulation path and the recovered stripping liquid are provided. A filter for filtering and a heater for heating the recovered stripping solution are provided.

Further, the invention of the resist stripping apparatus according to claim 7 is provided by arranging a plurality of the resist stripping apparatuses according to any one of claims 1 to 6 adjacent to each other, and the substrate holding means between the resist stripping apparatuses. And a pipe for feeding the stripping solution.

The invention related to the resist stripping method according to claim 8 includes a step of storing the substrate to be processed held by the substrate holding means for holding the substrate to be processed in a peeling tank, and a step from the substrate to be processed to the bottom of the peeling tank. A step of closing an opening having a size allowing the peeled strip to pass through with a lid that can be freely opened and closed, a chemical solution supplying step of supplying a stripping solution for stripping an unnecessary resist on the substrate to be processed to the stripping tank, and A step of opening the lid and discharging the peeling piece deposited on the bottom of the peeling tank from the discharge hole together with the peeling liquid to the outside of the peeling tank; and a sink of the peeling tank discharged from the discharge hole by the sink receiving release strip that has been deposited on the bottom and the stripping solution, a receiving step of Ru drained by moving the stripping solution and the release strip or the like to the discharge port, an opening is formed under the discharge port, wherein Said discharge of the sink In the storage tank for storing temporarily the stripping solution or the like sent from the filtration means rectifying mechanism is provided for the gradual flow of the stripping solution, the recovery step of separating and recovering the stripping solution and the release strip It is characterized by having.

The present invention provides the following excellent effects by including the above-described configuration and steps. That is, according to the first aspect of the present invention, a discharge hole having an opening large enough to allow a peeling piece to be peeled off from the substrate to be processed is formed at the bottom of the peeling tank, and the discharge hole can be opened and closed with a lid that can be opened and closed. By closing and connecting the lid to the opening / closing mechanism, the lid can be opened by the opening / closing mechanism when the peeling process is completed. As a result, even if the shape of the peeling piece peeled off from the substrate to be processed during the peeling process is large and large, it can be discharged together with the peeling liquid, and the waste liquid port is blocked as in the prior art. The peeled piece can be smoothly discharged and recovered easily. Further, the peeled piece can be easily collected.

  According to the second aspect of the present invention, the support shaft is connected to the opening / closing mechanism, fixed at a location close to the discharge hole, and the cover body is pivotally supported by the support shaft, thereby opening and closing the cover body with a simple mechanism. It becomes possible to do.

  According to the third aspect of the present invention, the unnecessary thin film adhering to the substrate to be processed can be efficiently and easily connected by connecting the substrate holding means to the swing mechanism and swinging the substrate to be processed held by the holding means. Can be peeled off.

According to invention of Claim 4, the peeling piece from which magnitude | sizes can be sorted and collect | recovered. In addition, by collecting relatively large peel pieces with a coarse mesh filtration means and taking out relatively small peel pieces with a fine mesh filtration means, the filter means can be prevented from being clogged, and as clean as possible. You can reuse anything.

According to the invention of claim 5 , since the stripping liquid discharged from the stripping tank can be circulated and reused, the circulating liquid can be supplied into the stripping tank, and the stripping liquid can be used effectively and processed. Can be reduced.

According to the sixth aspect , the stripping solution discharged from the stripping tank can be reused under optimum conditions.

According to the seventh aspect of the present invention, a plurality of resist stripping apparatuses are arranged adjacent to each other, and a transport mechanism for transporting the substrate holding means is provided between the resist stripping apparatuses, and each resist is provided by a pipe for feeding the stripping solution. By connecting the stripping devices, it is possible to perform resist stripping in stages, such as stripping most of the DF in the stripping device on the front side, and stripping and removing DF as a finishing process on the stripping device on the backside. Therefore, the peeling performance can be improved. Moreover, since the used stripping solution of the back side peeling device can be reused as the stripping solution of the front side peeling device, the amount of the stripping solution used can be reduced.

According to the invention of claim 8 , even if the shape of the peeling piece peeled off from the substrate to be processed during the peeling process is large and large, it can be discharged together with the peeling liquid, and the waste liquid as in the prior art. The peeled piece can be smoothly discharged without the mouth being blocked. Moreover, a peeling piece can be collect | recovered efficiently.

  Hereinafter, the best embodiment of the present invention will be described with reference to the drawings. However, the embodiment shown below exemplifies a resist stripping apparatus and a resist stripping method for embodying the technical idea of the present invention, and is not intended to identify the present invention. And other embodiments within the scope of the claims are equally applicable.

With reference to FIGS. 1-2, the structure of the resist peeling apparatus which concerns on one Embodiment of this invention is demonstrated. 1 is an overall schematic diagram showing a peeling tank constituting the resist peeling apparatus of the present invention, a recovery apparatus connected to the peeling tank, and piping. FIG. 2 is a schematic view of the peeling tank of FIG. It is the schematic sectional drawing which showed the state in which was accommodated.
As shown in FIG. 1, the resist stripping apparatus 1 stores a substrate holding means (lifter) 8 for holding a plurality of wafers W, a wafer W held on the substrate holding means 8 and a predetermined amount of stripping solution. A recovery device 11 comprising a peeling tank 2, a sink 9 for recovering the stripping solution and strips discharged from the peeling tank 2, and a storage tank (hereinafter referred to as a buffer tank) 10 for temporarily storing the recovered material. The buffer tank 10 and the peeling tank 2 are connected by a pipe L with a pump P, a filter F, and a heater H interposed therebetween, and the peeling pieces overflowing from the tank during processing are deposited. At the time of collection, the circuit has a configuration in which a circulation path Cir is formed in which the collected stripping solution is returned to the stripping tank 2 and reused. The resist stripping apparatus 1 includes means for supplying a chemical solution (stripping solution) to the stripping tank 2 and a chemical solution supply source, but these are omitted in this figure. Hereinafter, the configuration of the stripping tank 2, the sink 9, the buffer tank 10, and the circulation path Cir constituting the resist stripping apparatus 1 will be sequentially described.

  As shown in FIG. 2 (a), the peeling tank 2 includes a bottomed box-shaped inner tank 3 having an opening 3a formed at the upper portion and a predetermined depth, and an outside of the opening 3a of the inner tank 3. It consists of an outer tub 4 that contains a stripping solution that surrounds and overflows from the inner tub 3, and is made of a chemical-resistant and heat-resistant material, such as quartz or a synthetic resin material. The inner tank 3 has a size capable of accommodating a lifter 8 that holds a plurality of wafers W, a wafer W held by the lifter 8, and a predetermined amount of stripping solution. (See FIGS. 2B and 2C. In FIGS. 2B and 2C, the lifter 8 holds the wafer W and moves it up and down, and the state is in the lower position and the upper position, respectively. This volume is for example 55 liters. Further, the inner tank 3 has a lower area gradually narrower than an upper opening area, and the longitudinal section has a substantially hexagonal shape. By gradually reducing the lower area, the release of the peeling pieces and the peeling liquid adhering to the inner wall of the inner tank 3 becomes smooth. For the stripping solution, a primary aliphatic amine (monoethanolamine) or a lactone (diethylene glycol monobutyl ether) such as δ valerolactone in a water-soluble organic solvent is diluted with pure water.

At the bottom 3c of the inner tank, the stripping solution and release strip discharge hole 3 ₁ of the size capable of a to large amount of outflow is formed. The exhaust hole 3 ₁ is one example, shape its diameter circular is 5.0cm, for example. The discharge hole 3 ₁ is determined in consideration of the size of the amount and release strip of the stripping liquid reserved in the peeling vessel 2. Increasing the diameter of the discharge hole 3 _1, although the discharge speed becomes faster because the release strip can be discharged at a time, whereas the bottom cover (lid) to be described later stripping liquid reserved in the release tank 2 at 6 mechanical In order to support it, a large-scale opening / closing means capable of withstanding the liquid pressure of the stripping solution is required, and thus the above size needs to be determined appropriately. Of course, the diameter of the discharge hole _{3 1} may be 5.0cm more or less.

Further, the bottom portion 3c, openable bottom lid 6 for closing the discharge hole 3 ₁ is mounted. The bottom cover 6, one side edge is connected to the support shaft 7, the support shaft 7 is rotatably supported in the vicinity of the opening of the discharge hole 3 _1. The support shaft 7 is connected to a drive mechanism (not shown).
By rotating the support shaft 7, the discharge hole 3 ₁ is closed or opened by the bottom cover 6. Preferable to provide sealing means at the bottom of the discharge hole 3 _1. However, since the sink 9 is disposed below the peeling tank 2, leakage of the peeling liquid can be collected by this sink. Therefore, an advanced seal is not necessary for this sealing means. The bottom cover 6 is rotatable by the support shaft 7, but may be slidable, for example.

The inner tank 3 opposite the side wall surface ₃ A, _{3 B,} 3 pieces of the injection nozzle pipe ₅ H _{respectively, 5 M,} 5 _L and _{5 H ', 5 M',} 5 L ' is at a predetermined distance It is mounted at approximately equal intervals. These injection nozzle pipes _5H , _5M , _5L and _{5H '} , _5M' , _{5L '} have a plurality of injection openings at substantially equal intervals with a predetermined distance in the longitudinal direction (depth of the paper surface). Is formed. Each spray nozzle tube is mounted on the side wall surface so that each spray port faces the center of the wafer W. For example, the spray ports of the pair of opposed spray nozzle tubes 5 _H and 5 _{H ′} are obliquely downward, similarly, the spray ports of the spray nozzle tubes 5 _M and 5 _{M ′} are horizontally oriented, and further each spray nozzle tube 5 _L. 5 _{L ′} injection port is directed obliquely upward. As a result, the stripping solution strikes the wafer W surface substantially uniformly, and stripping can be performed without processing unevenness. The number and arrangement of the injection nozzle tubes are not limited to the above number and arrangement.

  As shown in FIGS. 2 (b) and 2 (c), the inner tank 3 can hold a plurality of wafers W in a vertically standing state at a substantially equal pitch, for example, a lifter 8 Is accommodated so as to be movable up and down. The lifter 8 includes a mounting table 8a on which a plurality of wafers W can be mounted, and an operating rod 8b that is coupled to the mounting table 8a and moves the lifter 8 up and down. The operating rod 8b is not shown. It is connected to the moving mechanism. Since this lifter 8 is a known one, a detailed description is omitted.

Outer tub 4, as shown in FIG. 1, the discharge port 4 ₁ is formed at the bottom thereof. The discharge port 4 _1, is connected the discharge pipe 4a, stripping solution stored in the outer tub 4 is made from the exhaust pipe 4a to be derived to the sink 9.

The recovery device 11 has an opening and a predetermined depth above, a sink that has a size that covers the side wall and bottom of the peeling tank 2 with a predetermined gap, and has a discharge port 9b that discharges the recovered material ( sink) 9 and a buffer tank 10 for temporarily storing the recovered liquid discharged from the discharge port 9b of the sink 9. _A pair of front lids 12 _A and 12 _B are attached to the opening 9 a above the sink 9 so as to be freely opened and closed. The front lids 12 _A and 12 _B are closed so that the stripping solution and its vapor are not scattered outside except when the wafer W is transferred.

The buffer tank 10 is composed of a bottomed container having an opening 10 a on the upper side, and is installed on a base (not shown) so that the opening 10 a is positioned below the discharge port 9 b of the sink 9. The buffer tank 10, the outlet 10 ₁ is formed on the bottom, the pipe L is connected to the discharge port 10 _1. In addition, two strainers 13 and 14 are accommodated in the tank 10. Each of these strainers includes a first strainer 13 having a small size and a second strainer 14 having a large size for accommodating the first strainer 13, and each of these strainers is formed of a ridge having a predetermined mesh size. . The mesh size of the first strainer 13 is coarse, for example, 50 mesh per inch, and the mesh of the second strainer 14 is relatively fine, for example, 80 mesh per inch. By using the first and second strainers 13 and 14, first, a peeled piece having a large shape can be captured by the first strainer 13, and then a small shape can be captured by the second strainer 14. In addition, the captured peeling piece takes out the 1st, 2nd strainers 13 and 14 from a tank, and is discarded to another place.

  In addition, as shown in FIG. 3, the first strainer 13 is equipped with a rectifying plate (rectifying mechanism) 15 for slowing the flow of the stripping solution to prevent the stripping piece from rising in the liquid. The phenomenon that the entire first strainer 13 is clogged can be prevented. (FIG. 3A is a top view and FIG. 3B is a side view.)

  Although it is preferable from the point of collection | recovery of a peeling piece that the baffle plate (rectifier mechanism) 15 is provided in the 1st strainer 13, it does not necessarily need to be provided in the 1st strainer 13. In addition, although the case where there were two strainers was described here, three or more having different mesh sizes may be used. In addition, this strainer may be replaced by other filtration means, for example, a means for partitioning the inside of the buffer tank 10 with filtration networks having different mesh sizes.

The stripping tank 2 and the buffer tank 10 heat the recovered stripping solution by a pump P that pressurizes and feeds the stripping solution collected in the buffer tank 10, a filter F that filters the recovered stripping solution, and the recovered stripping solution. Circulation that connects with a pipe L through a heater H, filters the stripping solution discharged from the stripping tank stored in the buffer tank 10, heats it to a predetermined temperature, and returns it to the stripping tank for circulation. A path Cir is formed. The filter F has a pore diameter of 100 to 400 mesh, for example. Further, the stripping solution is heated to 40 to 80 ° C. by the heater H. During the DF peeling process, the DF residue floating in the upflow in the peeling tank 2 is captured by the first and second strainers 13 and 14 and the filter F and the temperature is adjusted by the heater H, and then the injection nozzle pipe 5 _{H , 5 M, 5 L, 5} H ', 5 M', the liquid circulation is carried out to supply to the stripping bath stripping solution circulating from 5 _{L '.}

Moreover, after completion | finish of peeling process, the bottom cover 6 is opened, all the DF peeling liquid of the inner tank 3 is poured into the buffer tank 10, and the peeling piece in the inner tank 3 etc. which were not able to be removed by liquid circulation are 1st, 2nd. catch strainer 13 and 14, each in the state the inner tub 3 which opened bottom cover 6 When emptied the three injection nozzle pipe _{5 H, 5 M, 5 L} and _{5 H ', 5 M',} 5 L After rinsing off the peeled pieces adhering to the inner tank 3 and the lifter 8 with one or a plurality of _', the bottom lid 6 is closed, and the fine peeled pieces are removed via the pump P, filter F and heater H. The temperature is adjusted and the stripping solution is returned to the inner tank 3. During standby (standby), the liquid is circulated in the peeling tank 2 by an upflow in order to maintain the liquid temperature.

  Next, a DF stripping process (resist stripping method) using this resist stripping apparatus will be described with reference to FIGS. 4 is a process diagram showing the peeling process, FIG. 5 is an explanatory diagram for explaining the processes of steps S5 and S6 in the process of FIG. 4, and FIG. 6 is for explaining the process of step S8 in the process of FIG. It is explanatory drawing.

First, the lifter 8 is accommodated in the peeling tank 2 in advance, and the peeling liquid is stored in the inner tank 3 from a chemical liquid supply source (not shown) via a supply means. In this state, the front lids 12 _A and 12 _B are opened, a plurality of wafers W are held by a transfer arm (not shown), and the lifter 8 is temporarily escaped from the inner tank 3 or the inner tank 3. The wafer W is transferred, the wafer W is immersed in a stripping solution, and the front lids 12 _A and 12 _B are closed (steps S1 to S3).

Next, in step S4, the DF peeling process of the wafer W is started. This stripping process includes first and second stripping processes. First, in the first stripping process in step S4, the circulation of the stripping liquid is started and the lifter 8 is swung so that the stripping liquid in the stripping tank 2 is predetermined. Immerse and process at time t1 (1 minute <t1 <30 minutes). By this immersion, the DF on the surface of the wafer W is swollen and about 1 to 10% of the DF is peeled off. In this process, in particular, the DF of the outer peripheral portion Wa of the wafer W is peeled off (see FIG. 5A). The peeled DF peeling piece W ₀ floats up to the upper layer in the inner tank 3, flows out to the outer tank 4 by a so-called up flow, and is expelled from the peeling tank 2. The overflowing stripping liquid and the stripped stripping piece W ₀ are collected by the sink 9 and temporarily stored in the buffer tank 10. The stripping solution or the like stored in the tank 10 is filtered by the first and second strainers 13 and 14 and then pressurized by the pump P (for example, 30 L / min), and further impurities are removed by the filter F. The heater H is heated to a predetermined temperature (35 to 45 ° C.) and supplied to each of the injection nozzle tubes 5 _H , 5 _M , 5 _L, and 5 _{H ′} , 5 _{M ′} , and 5 _{L ′} . The wafers W are sprayed from the 5 _H , 5 _M , 5 _L, and 5 _{H ′} , 5 _{M ′} , and 5 _{L ′} spray ports. Following the first peeling process, in step S6, the second peeling process is performed for a predetermined time t2 (30 minutes <t2 <60 minutes). During this process, as in the first peeling process, the small DF peeling piece W ₀ is expelled from the peeling tank 2 by an upflow and stored in the buffer tank 10 (see FIG. 5B). The lifter 8 is swung in the inner tank 3 during the first and second peeling processes. After the stripping process is finished, the circulation of the stripping solution is stopped and the swinging of the lifter 8 is stopped. The wafer W that has undergone the peeling process is subjected to a cleaning and drying process (steps S71 to S74).

On the other hand, in this processing step, a large amount of large peeling pieces W ₀ are peeled off from the surface of the wafer W, and because of their size, they are not driven out by upflow, so the large peeling pieces W ₀ are deposited on the bottom of the peeling tank 2. . Therefore, every time a series of peeling processing (one lot) of the wafer W is completed, the peeling pieces and the residues are collected (step S8).
Its recovery method, as shown in FIG. 6, the bottom cover 6 of the separation tank 2 is opened by the opening and closing mechanism (not shown), sink stripping solution and DF release strip W ₀ in the stripping vessel 2 through the discharge hole 3 ₁ 9 To drop into the buffer tank 10. Then, with the bottom lid 6 opened, each of the three injection nozzle pipes 5 _H , 5 _M , 5 _L and 5 _{H ′} , 5 _{M ′} , 5 _{L ′} or a plurality of inner tanks 3 and lifters 8 The peeling piece adhering to the substrate is washed away with the peeling liquid, and after all the peeling liquid and the peeling piece are discharged from the peeling tank 2, the bottom lid 6 is closed (see FIG. 6B). Further, in the buffer tank 10, a large-sized peeling piece is captured by the first strainer 13 having a relatively large mesh, and further, a small-sized peeling piece that has passed through the first strainer 13 is captured by the second strainer 14. The These strips are collected by removing the first and second strainers 13 and 14 from the buffer tank 10 and dumping the strips in these strainers into other containers for recovery. The empty first and second strainers 13 and 14 are returned to the buffer tank 10. Thereafter, the pump P is operated, the temperature-controlled stripping solution is returned to the stripping tank 2 through the filter F and the heater H, a stripping circuit Circ is formed, and a new wafer W is awaited. . In addition, when the stripping liquid is insufficient in a new wafer process, this shortage is appropriately supplied from a chemical supply source (not shown).

  In this stripping process, a mixed solution of a primary aliphatic amine, a water-soluble organic solvent and water is used as a stripping solution, and an acrylic resin (binder polymer, photopolymerizable multi-functional group monomer, photopolymerization on the surface of the wafer W is used. About 95% of the initiator, thermal polymerization inhibitor, dye, etc.) can be removed. In addition, it was confirmed by experiment that this stripping solution can be used for 1000 wafers or 40 lots.

  The above resist stripping apparatus 1 can strip and remove about 95% of the DF on the wafer W surface. However, if the resist stripping apparatus having the same configuration is installed in front and back, the stripping rate can be further increased. become.

  Next, with reference to FIGS. 7-9, the peeling removal method which arrange | positioned two resist peeling apparatuses adjacently is demonstrated. 7 is a process diagram illustrating the peeling process, FIG. 8 is an explanatory diagram for explaining the process of step S9 in the process of FIG. 7, and FIG. 9 is an explanatory diagram for explaining the process of step S17 in the process of FIG. It is.

  In the stripping and removing method described here, two resist stripping apparatuses having the above-described configuration, that is, the first and second stripping apparatuses 1A and 1B are disposed adjacent to each other, and a transport mechanism for transporting the lifter 8 is installed therebetween. Further, the two apparatuses are connected by a pipe (not shown) for transferring the stripping solution. In addition, since a well-known conveyance mechanism is already used for a conveyance mechanism, description is abbreviate | omitted. The first and second stripping apparatuses 1A and 1B are supplied with stripping liquid from a stripping liquid supply source (not shown) through piping. It is preferable to use the used stripper used in the second stripper 1B as the stripper for the first stripper 1A, and to use an unused stripper as the stripper for the second stripper 1B. . For example, in the second peeling apparatus 1B, an unused new solution is used up to 0 to 500 wafers (0 to 20 lots in the case of 25 wafers / 1 lot), and then this used release solution is treated as an old solution. The tank is transferred from the peeling tank 2 ′ of the second peeling apparatus 1B to the peeling tank 2 of the first peeling apparatus 1A, and the old liquid is 501 to 1000 sheets (in the case of 25 sheets / 1 lot, 21 to 40 lots). )use. Thereby, the effective reuse of the stripping solution can be achieved.

The hotel's process, after the process of step S1~S7 and S7-1 is completed by the first peeling apparatus 1A, first, second table cover ₁₂ A, 12 _B and 12 _{A ',} 12 _B' open, The wafer W is taken out from the inner tank 3 of the first peeling apparatus 1A while being placed on the lifter 8, transferred by a transfer mechanism (not shown), and stored in the inner tank 3 'of the second peeling apparatus 1B (Steps S8 to S10). FIG. 8). At this time, the stripping solution is stored in the inner tank 3 ′. Thereafter, the first and second front lids 12 _A and 12 _B and 12 _{A ′} and 12 _{B ′} are closed, and the third process is started (steps S11 and S12).

In this third process, the circulation of the stripping solution is started and the lifter 8 is swung in the inner tank 3 ′ to process for a predetermined time t3 (1 minute <t3 <30 minutes). During this process, DF release strip W ₀ which is peeled, 'floating into the upper layer in the outer tub 4 in a so-called up-flow' inner tank 3 is driven out. DF release strip W ₀ peeling liquid and expelled overflows, 'are collected in a buffer tank 10' sink 9 and is temporarily stored in the. The stripping solution or the like stored in the buffer tank 10 ′ is filtered by the first and second strainers 13 ′ and 14 ′, then pressurized by the pump P ′, and further impurities are removed by the filter F ′. Heated to a predetermined temperature by the heater H ′, supplied to each spray nozzle tube, and sprayed to the wafer W from each spray port of each spray nozzle tube. After the end of the stripping process, the circulation of the stripping solution is stopped and the swinging of the lifter 8 ′ is stopped. The wafer W that has undergone the peeling process is subjected to a cleaning and drying process (steps S14 to S16, S16-1, and S16-2). On the other hand, if the peeling process is completed, the stripping vessel 2 'in because DF release strip W ₀ are deposited, the recovery of the stripping solution is performed in step S14-1. This collection is performed by the same method as step S8 of the resist stripping apparatus 1 and step S7-1 of the first stripping apparatus 1A. In the second peeling apparatus 1B, only a small amount of small peeling pieces are deposited, and therefore it is not always necessary to collect the peeling liquid in step S14-1.

  After the processing in the second peeling apparatus 1B is completed, the lifter 8 is returned to the first peeling apparatus 1A as shown in FIG. 9, and a new wafer is processed. Further, the stripping solution that has been used a predetermined number of times in the second stripping apparatus 1B is transferred to the first stripping apparatus 1A by a feeding means (not shown) and reused. By this process, the DF on the wafer W surface is peeled off almost 100%. The feeding means is, for example, a pump connected in the middle of the piping.

When the two first and second peeling devices 1A and 1B are used in this way, the first peeling device 1A performs most of the peeling processing, for example, about 95% of DF is peeled and removed. In the 2 peeling apparatus 1B, finishing treatment, that is, about 100% of DF can be peeled and removed, and the peeling performance can be improved. Moreover, since the used peeling liquid of the 2nd peeling apparatus 1B can be utilized for the peeling liquid of the 1st peeling apparatus 1A, the usage-amount of peeling liquid can be decreased.
Here, the case where two peeling devices are provided is shown, but it goes without saying that three or more peeling devices may be provided and processed.

It is the whole schematic which showed the peeling tank which comprises the resist peeling apparatus of this invention, the collection | recovery apparatus connected to this peeling tank, and piping. It is sectional drawing which showed the state in which the wafer was accommodated in the peeling tank and this peeling tank of FIG. It is explanatory drawing of a baffle plate (rectification | straightening mechanism), Fig.3 (a) is a top view, FIG.3 (b) is a side view. It is process drawing which shows the peeling process process using one resist peeling apparatus. It is explanatory drawing explaining the process of step S5, S6 in the process process of FIG. It is explanatory drawing explaining the process of step S8 in the process process of FIG. It is process drawing which shows the peeling process process using two resist peeling apparatuses. It is explanatory drawing explaining the process of step S9 in the process of FIG. It is explanatory drawing explaining the process of step S17 in the process of FIG. It is principal part sectional drawing of the resist peeling apparatus of a prior art.

Explanation of symbols

1, 1A, 1B resist stripping device 2,2 'stripping vessel 3, 3' in the tank 4, 4 'outer tub _{5 H, 5 M, 5 L} , 5 H', 5 M ', 5 L' injection nozzle pipe 6 , 6 'Bottom lid (lid)
7 Support shaft 8, 8 'Lifter 9, 9' Sink 10, 10 'Storage tank (buffer tank)
11 recovery device _{12 A, 12 B, 12 A} ', 12 B' table cover 13,14,13 ', 14' first, second strainer 15 rectifying plate (rectifying mechanism)
Circ Circulation path F Filter L Pipe H Heater P Pump

Claims (8)

A substrate holding means for holding the substrate to be processed; a substrate to be processed held by the substrate holding means; a peeling tank that contains the peeling liquid and strips unnecessary resist from the substrate to be processed; and a peeling liquid to the peeling tank In a resist stripping device comprising a chemical solution feeding means for feeding and a collecting device for collecting used stripping solution in the stripping tank,
The peeling tank has a discharge hole having an opening large enough to allow a peeling piece peeled from the substrate to be processed to pass through at the bottom of the peeling tank, and the discharge hole is closed with an openable / closable lid. The body is connected to an opening / closing mechanism, the lid is opened by the opening / closing mechanism, and the peeling piece deposited on the bottom of the peeling tank is discharged from the peeling tank together with the peeling liquid from the discharge hole,
The recovery device has a discharge port for discharging the stripping solution, the stripping piece, and the like, and receives the stripping liquid, the stripping piece, etc. overflowing from the stripping tank or discharged from the discharge hole and receiving the discharge port. and sink Before moving to an opening formed below the outlet of the sink, and a storage tank in which temporarily stripping solution or the like sent from the outlet of the sink, disposed in the reservoir tank resist stripping, wherein the filtering means, a rectifying mechanism is disposed within said filter means to moderate the flow of the stripping solution, in that it is configured to extract the release strip from the stripping solution is apparatus.   2. The resist stripping apparatus according to claim 1, wherein the lid is pivotally supported by a support shaft at a location close to the discharge hole, and the support shaft is connected to the opening / closing mechanism.   3. The resist stripping apparatus according to claim 1, wherein the substrate holding unit is connected to a swing mechanism that swings the substrate to be processed in the stripping tank. Said filtering means, according to the size of the release strip, any one of claims 1 to 3, characterized in that the release strip from the multi-stage non passes mesh roughness of different filtering means The resist stripping apparatus according to the item . The stripping tank and the storage tank are connected by a pipe having a predetermined thickness, filter the stripping liquid discharged from the stripping tank and stored in the storage tank, and heat the stripping tank to a predetermined temperature to perform the stripping. resist stripping apparatus according to any one of claims 1 to 4, characterized in that the circulation path for feeding back into tank is formed. The circulation path is provided with a pump for pressurizing and feeding the recovered stripping liquid from the storage tank, a filter for filtering the recovered stripping liquid, and a heater for heating the recovered stripping liquid. The resist stripping apparatus according to claim 5 . A plurality of resist stripping apparatuses according to any one of claims 1 to 6 , wherein a plurality of resist stripping apparatuses are disposed adjacent to each other, a transport mechanism that transports the substrate holding means between the resist stripping apparatuses, and a pipe that feeds stripping solution; A resist stripping apparatus comprising: Storing the substrate to be processed held by the substrate holding means for holding the substrate to be processed in a peeling tank;
A step of closing an opening having a size that allows a peeling piece peeled off from the substrate to be processed to pass through a bottom of the peeling tank with an openable / closable lid;
A chemical supply step for supplying a stripping solution for stripping unnecessary resist on the substrate to be processed to the stripping tank;
Opening the lid, and discharging the peeling pieces deposited on the bottom of the peeling tank from the discharge hole together with the peeling liquid to the outside of the peeling tank;
The sink, the peeling piece was deposited on the bottom of the stripping vessel that is discharged from the discharge hole receiving said stripping solution, and said stripping solution and receiving step of Ru drained by moving the release strip or the like to the discharge port ,
An opening is formed under the discharge port, and a rectifying mechanism is provided to gently flow the stripping solution in a storage tank that temporarily stores the stripping solution and the like delivered from the discharge port of the sink. A recovery step of separating and recovering the stripping piece and the stripping solution by a filtering means ,
A resist stripping method characterized by comprising:

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