JP5116216B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP5116216B2 JP5116216B2 JP2005140609A JP2005140609A JP5116216B2 JP 5116216 B2 JP5116216 B2 JP 5116216B2 JP 2005140609 A JP2005140609 A JP 2005140609A JP 2005140609 A JP2005140609 A JP 2005140609A JP 5116216 B2 JP5116216 B2 JP 5116216B2
- Authority
- JP
- Japan
- Prior art keywords
- potential
- current
- wiring
- transistor
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 238000001514 detection method Methods 0.000 claims description 30
- 239000011159 matrix material Substances 0.000 claims description 17
- 239000003990 capacitor Substances 0.000 description 107
- 239000010408 film Substances 0.000 description 84
- 239000000758 substrate Substances 0.000 description 60
- 239000010410 layer Substances 0.000 description 59
- 239000004065 semiconductor Substances 0.000 description 52
- 238000003860 storage Methods 0.000 description 39
- 108091006146 Channels Proteins 0.000 description 23
- 239000000463 material Substances 0.000 description 21
- 230000003071 parasitic effect Effects 0.000 description 18
- 230000007423 decrease Effects 0.000 description 16
- 230000006870 function Effects 0.000 description 14
- 230000008859 change Effects 0.000 description 13
- 238000005401 electroluminescence Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 13
- 239000011521 glass Substances 0.000 description 12
- 150000002894 organic compounds Chemical class 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 10
- 239000012212 insulator Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000003247 decreasing effect Effects 0.000 description 9
- 230000007257 malfunction Effects 0.000 description 9
- 230000002829 reductive effect Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 230000009471 action Effects 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000003111 delayed effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- 238000005070 sampling Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 230000003068 static effect Effects 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000002041 carbon nanotube Substances 0.000 description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 239000003566 sealing material Substances 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011152 fibreglass Substances 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910017073 AlLi Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910017911 MgIn Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 150000004696 coordination complex Chemical class 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- AHLBNYSZXLDEJQ-FWEHEUNISA-N orlistat Chemical compound CCCCCCCCCCC[C@H](OC(=O)[C@H](CC(C)C)NC=O)C[C@@H]1OC(=O)[C@H]1CCCCCC AHLBNYSZXLDEJQ-FWEHEUNISA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005140609A JP5116216B2 (ja) | 2004-05-21 | 2005-05-13 | 表示装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004152601 | 2004-05-21 | ||
| JP2004152601 | 2004-05-21 | ||
| JP2005140609A JP5116216B2 (ja) | 2004-05-21 | 2005-05-13 | 表示装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011135986A Division JP5386546B2 (ja) | 2004-05-21 | 2011-06-20 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006011386A JP2006011386A (ja) | 2006-01-12 |
| JP2006011386A5 JP2006011386A5 (https=) | 2008-06-26 |
| JP5116216B2 true JP5116216B2 (ja) | 2013-01-09 |
Family
ID=35778674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005140609A Expired - Fee Related JP5116216B2 (ja) | 2004-05-21 | 2005-05-13 | 表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5116216B2 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011232769A (ja) * | 2004-05-21 | 2011-11-17 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006065284A (ja) | 2004-07-26 | 2006-03-09 | Seiko Epson Corp | 発光装置及び電子機器 |
| US8058675B2 (en) * | 2006-12-27 | 2011-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device using the same |
| JP5288580B2 (ja) * | 2006-12-27 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US12118947B2 (en) | 2020-10-02 | 2024-10-15 | Sharp Kabushiki Kaisha | Scanning line drive circuit and display device provided with same |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1010493A (ja) * | 1996-06-24 | 1998-01-16 | Hitachi Ltd | 液晶表示装置および液晶表示基板 |
| JP3657527B2 (ja) * | 2001-04-09 | 2005-06-08 | シャープ株式会社 | 電源装置及びそれを備えた表示装置 |
| JP4490650B2 (ja) * | 2002-04-26 | 2010-06-30 | 東芝モバイルディスプレイ株式会社 | Ｅｌ表示装置の駆動方法、およびｅｌ表示装置 |
-
2005
- 2005-05-13 JP JP2005140609A patent/JP5116216B2/ja not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011232769A (ja) * | 2004-05-21 | 2011-11-17 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| US8917265B2 (en) | 2004-05-21 | 2014-12-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device and electronic device including a current source and a diode electrically connected at an output of the current source |
| JP2015118387A (ja) * | 2004-05-21 | 2015-06-25 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US9536937B2 (en) | 2004-05-21 | 2017-01-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a rectifying element connected to a pixel of a display device |
| US10115350B2 (en) | 2004-05-21 | 2018-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having rectifying elements connected to a pixel of a display device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006011386A (ja) | 2006-01-12 |
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