JP5111094B2 - Semiconductor device - Google Patents

Description

The present invention relates to a semiconductor device having means for communicating in a non-contact manner with an external reader.

In recent years, RFID (Radio Frequency IDentification system) has been studied and put into practical use.

RFID communicates with an electromagnetic wave between a semiconductor device (also referred to as an RFID tag, an RF tag, an ID tag, an IC tag, a wireless tag, an electronic tag, and a wireless chip) that can transmit and receive information wirelessly, and a reader / writer. It is a technology for recording and reading data. Such a semiconductor device includes an IC chip (integrated circuit) having a signal processing circuit provided with a memory circuit and the like, and an antenna.

An RF tag used in RFID obtains operating power from electromagnetic waves received from a reader / writer by electromagnetic induction, and exchanges data with the reader / writer using the radio waves. The RF tag usually has an antenna for transmitting and receiving such radio waves formed separately from the IC chip and connected to the IC chip.

As described above, when the antenna and the IC chip are separately formed and connected, the two must be electrically connected, and the connection between the terminal of the minute IC chip and the antenna involves technical difficulty, and thus the yield. Has led to a decline. In addition, stress is applied to the connection point when using the RF tag, causing disconnection or connection failure. In particular, when a flexible RF tag is used, connection failure is expected to become a problem. The

In order to solve the above-described problem of poor connection between the antenna and the IC chip, a first antenna (also called an on-chip antenna or on-chip coil) is formed on the IC chip, and a second antenna (booster antenna) constituting the RF tag is formed. Also known is a non-contact IC module that eliminates an electrical connection caused by contact between an antenna and an IC chip by communicating with an electromagnetic induction (for example, see Patent Document 1 and Patent Document 2).

In the RF tag or the non-contact IC module described in Patent Document 1 and Patent Document 2, a first antenna (also referred to as an on-chip antenna or an on-chip coil) formed on the IC chip and the RF tag are configured. Communication is performed by electromagnetic induction with a second antenna (also called a booster antenna), and the first antenna mainly operates as a coil. At this time, if the inductance of the first antenna is L and the capacitance of the IC chip is C, the first antenna formed on the IC chip and the IC chip has L and C in series or in parallel. It can be regarded as a connected LC resonance circuit, and its resonance frequency fr is defined by the following equation.

In addition, when the resonance frequency fr coincides with the carrier frequency fc, a larger resonance current is generated in the coil and more current can be supplied to the IC chip. Therefore, the first antenna has the carrier frequency fc of the RF tag. It is desirable to resonate. For this reason, the resonance frequency may be adjusted by separately forming a capacitive element on the IC chip and increasing or decreasing the value of the capacitance C of the IC chip.
JP 2000-137779 A JP 2006-203852 A

In recent years, the use of RF tags using a higher carrier frequency fc such as the UHF band and the microwave band has spread, and a case where a coil that resonates at such a high carrier frequency fc is realized will be considered. In an LC resonance circuit in which the IC chip is regarded as a capacitor and the first antenna formed on the IC chip is regarded as a coil, in order to make the resonance frequency fr coincide with the carrier frequency fc, the inductance of the first antenna It is necessary to reduce either L or the capacitance C of the IC chip, or both. However, although the value of the inductance L is generally adjusted by changing the outer diameter dimension or the line width of the coil, the higher the resonance frequency fr, the greater the influence of a slight fluctuation of the inductance L, and the appropriate resonance. There is a problem that it is difficult to manufacture a coil to be formed on an IC chip.

In addition, although it is possible to separately form a capacitive element on the IC chip for the purpose of adjusting the resonance frequency fr, it has been a cause of cost increase due to an increase in the area of the IC chip. Furthermore, there is a possibility that the resonance frequency fr is shifted due to a shift of the capacitance value C due to variations in manufacturing. Although a mechanism for optimizing the resonance frequency fr can be provided by adjusting the capacitance value after manufacturing, etc., it takes much time and labor to inspect and adjust the resonance frequency fr of all the IC chips at the time of shipment. There is also a problem that it increases costs and leads to cost increase.

In addition, IC chips have been miniaturized year by year, and there has been a problem that it becomes difficult to connect the input / output terminals of the IC chip and the antenna when manufacturing the RF tag. Although this problem is alleviated by eliminating the electrical connection due to the contact between the antenna and the IC chip, there is a problem that the positional relationship and shape of the booster antenna constituting the RF tag and the antenna formed on the IC chip are limited. .

The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a semiconductor device capable of non-contact communication without forming a resonance circuit on an IC chip. It is another object of the present invention to provide a semiconductor device that has a simplified wiring pattern and antenna structure formed on an IC chip and is easy to manufacture.

The semiconductor device of the present invention includes a conductive film functioning as an antenna provided on one surface of a substrate, an IC chip, and a first conductive film provided independently of each other so as to be electrically connected to the IC chip. And the second conductive film, and the IC chip is formed on the other surface of the substrate such that the first conductive film and the second conductive film form a capacitor and a capacitor functioning as an antenna through the substrate. The IC chip that is provided transmits and receives data to and from the outside through a conductive film that functions as an antenna. In this specification, an IC chip refers to an electronic circuit in which various elements such as transistors, resistors, capacitors, and diodes are collected and provided on a substrate by applying a process technique. In particular, a transmission circuit, a reception circuit, a power supply circuit, a memory circuit, and a logic control circuit are included in order to function as an RFID tag. Further, the substrate for supporting the IC chip is not limited to a silicon substrate, and may be a flexible substrate such as a glass substrate or a polyimide substrate.

In the semiconductor device of the present invention having the above structure, the conductive film functioning as an antenna includes a third conductive film and a fourth conductive film which are provided independently on one surface of the substrate. The first conductive film forms a capacitor with the third conductive film through the substrate, and the second conductive film forms a capacitor with the fourth conductive film through the substrate.

The semiconductor device of the present invention includes an IC chip, a first conductive film provided on one surface of the IC chip, a second conductive film provided on the other surface of the IC chip, A third conductive film functioning as an antenna provided over the first substrate and a fourth conductive film functioning as an antenna provided over the second substrate, the first conductive film being the first conductive film A capacitor is formed with the third conductive film through the second substrate, a capacitor is formed with the second conductive film through the second substrate, and the IC chip functions as an antenna. Data is transmitted / received to / from the outside through the conductive film and the fourth conductive film functioning as an antenna.

The semiconductor device of the present invention includes an IC chip, a first conductive film provided on one surface of the IC chip, a second conductive film provided on the other surface of the IC chip, A third conductive film functioning as an antenna provided over the first substrate, a fourth conductive film functioning as an antenna provided over the second substrate, and the first conductive film. A first insulating film and a second insulating film provided so as to cover the second conductive film, and the first conductive film is connected to the third conductive film via the first insulating film. A capacitor is formed, the second conductive film forms a capacitor with the fourth conductive film through the second insulating film, and the IC chip has a third conductive film that functions as an antenna and a fourth that functions as an antenna. Data is transmitted / received to / from the outside through the conductive film.

The semiconductor device of the present invention includes an IC chip, a first conductive film provided on one surface of the IC chip, a second conductive film provided on the other surface of the IC chip, A third conductive film functioning as an antenna provided over the first substrate, a fourth conductive film functioning as an antenna provided over the second substrate, and the third conductive film. A first insulating film and a second insulating film provided so as to cover the fourth conductive film, and the first conductive film is connected to the third conductive film via the first insulating film. A capacitor is formed, the second conductive film forms a capacitor with the fourth conductive film through the second insulating film, and the IC chip has a third conductive film that functions as an antenna and a fourth that functions as an antenna. Data is transmitted / received to / from the outside through the conductive film. In addition, the first insulating film is provided on the third conductive film so as to cover a portion where the third conductive film and the fourth conductive film face each other, and the second insulating film includes the fourth insulating film. On the conductive film, the third conductive film and the fourth conductive film may be provided so as to cover portions facing each other.

In addition, a semiconductor device of the present invention includes an IC chip, a first conductive film and a second conductive film that are provided independently of each other so as to be electrically connected to the IC chip, a first conductive film, and a first conductive film. The IC chip includes an insulating film provided to cover the two conductive films and a conductive film functioning as an antenna provided independently of each other on the substrate. The IC chip includes the first conductive film and the second conductive film. A film is provided over the substrate so as to form a capacitor and a conductive film functioning as an antenna through an insulating film, and the IC chip transmits and receives data to and from the outside through the conductive film functioning as an antenna.

In the semiconductor device of the present invention having the above structure, the IC chip includes a battery that can be charged with power wirelessly from the outside.

According to the semiconductor device of the present invention, the contact-type joint portion conventionally provided between the antenna and the IC chip becomes unnecessary, and electrical failure such as disconnection does not occur, so that the reliability is improved. Furthermore, the communication distance can be greatly improved compared to when communication is performed using only the antenna formed on the IC chip. Further, since non-contact communication is possible without forming a resonance circuit on the IC chip, the wiring pattern formed on the IC chip is simplified, and the antenna configuration can be simplified. Further, since the IC chip can be mounted on the antenna regardless of the top and bottom of the IC chip, there is an effect that the process is simplified.

Embodiments of the present invention will be described below with reference to the drawings. However, the present invention can be implemented in many different modes, and those skilled in the art can easily understand that the modes and details can be variously changed without departing from the spirit and scope of the present invention. Is done. Therefore, the present invention is not construed as being limited to the description of this embodiment mode. Note that in all the drawings for describing the embodiments, the same portions or portions having similar functions are denoted by the same reference numerals, and repetitive description thereof is omitted.

(Embodiment 1)
In this embodiment mode, an antenna and a semiconductor device of the present invention are described with reference to drawings.

FIG. 1A is a diagram schematically illustrating a configuration example of the first embodiment of the present invention, and FIG. 1B is a cross-sectional view taken along a line AB in FIG.

The semiconductor device described in this embodiment includes an IC chip 101, a first conductive film 102, a second conductive film 103, a third conductive film 104, a fourth conductive film 105, and a substrate 106. Have The third conductive film 104 and the fourth conductive film 105 function as an antenna that receives a signal from the outside in the semiconductor device. In addition, the first conductive film 102 and the second conductive film 103 function as electrodes that exchange signals with the third conductive film 104 and the fourth conductive film 105 in which the IC chip 101 functions as an antenna. In other words, the semiconductor device illustrated in FIG. 1 includes the first conductive film 102 and the third conductive film 104 which are electrically isolated, and the second conductive film 103 and the fourth conductive film 105 which are electrically isolated. Are capacitively coupled (capacitive coupling), whereby the IC chip 101 can exchange signals with the outside.

Further, the first conductive film 102 and the second conductive film 103 are provided independently of each other on the IC chip 101, and the first input / output terminal of the IC chip 101 and the first conductive film 102 are electrically connected. The second input / output terminal of the IC chip 101 and the second conductive film 103 are electrically connected. The third conductive film 104 and the fourth conductive film 105 are formed independently on one surface of the substrate 106, and the IC chip 101 is disposed on the other surface of the substrate 106.

The first conductive film 102 formed on the IC chip 101 is provided so as to face the substrate 106, and is disposed substantially parallel to the third conductive film 104 with the substrate 106 interposed therebetween. Note that a region of the third conductive film 104 that overlaps with the first conductive film 102 is referred to as a first region 107. Further, the second conductive film 103 formed on the IC chip 101 is provided so as to face the substrate 106, and is disposed substantially in parallel with the fourth conductive film 105 with the substrate 106 interposed therebetween. Note that a region of the fourth conductive film 105 that overlaps with the second conductive film 103 is referred to as a second region 108.

Thus, in a semiconductor device having an antenna and an IC chip, connection failure can be prevented by adopting a structure in which the antenna and the IC chip are not directly connected. In addition, since signal exchange between the antenna and the IC chip is performed by capacitive coupling, non-contact communication is possible without forming a resonance circuit on the IC chip, so that a wiring pattern formed on the IC chip can be easily obtained. Thus, the antenna configuration can be simplified.

Next, the operation of the semiconductor device of this embodiment will be described with reference to FIG.

Current is generated in the third conductive film 104 and the fourth conductive film 105 of the semiconductor device 201 by radio waves transmitted from the antenna 204 connected to the reader / writer 203. Electric charges are generated in the first region 107 and the second region 108 by the current generated in the third conductive film 104 and the fourth conductive film 105. Note that the polarities of the charges generated in the first region 107 and the second region 108 are preferably reversed. The charge generated in the first region 107 is generated by capacitive coupling in the first conductive film 102 in the IC module 202 facing the substrate 106 and the charge generated in the second region 108 is Electric charges are generated by capacitive coupling in the second conductive film 103 in the IC module 202 facing each other with the 106 interposed therebetween. Since each of the first conductive film 102 and the second conductive film 103 is connected to an input / output terminal of the IC chip 101, power is supplied to the IC chip 101. By the operation described above, the first conductive film 102 and the third conductive film 104 and the second conductive film 103 and the fourth conductive film 105 are insulated and are not in contact with each other. Electrical conduction due to capacitive coupling occurs, and power and signals sent from the reader / writer 203 are transmitted to the IC chip 101.

The IC chip 101 operates by the above-described operation. In the case where a response is returned from the semiconductor device 201 toward the reader / writer 203, charges are generated in the first conductive film 102 and the second conductive film 103 by the operation of the IC chip 101. The charge generated in the first conductive film 102 generates charge in the first region 107 that is capacitively coupled to the first conductive film 102, and the charge generated in the second conductive film 103 is the second conductive Electric charges are generated in the second region 108 that is capacitively coupled to the film 103. A current flowing through the third conductive film 104 and the fourth conductive film 105 changes due to charges generated in the first region 107 and the second region 108, and electromagnetic waves are generated to communicate with the reader / writer 203. Can do.

The third conductive film 104 is capacitively coupled to the first conductive film 102 in the first region 107, and the fourth conductive film 105 is capacitively coupled to the second conductive film 103 in the second region 108. This is a capacitor in which the first conductive film 102 and the third conductive film 104 in the first region 107 are used as electrodes and the substrate 106 is a dielectric between them, and the second conductive film 103 and the second region are used. This is because the fourth conductive film 105 in 108 can be regarded as a capacitor having an electrode and the substrate 106 having a dielectric therebetween. Strengthening this capacitive coupling is desirable because it can reduce power loss due to non-contact transmission of power and signals. It is generally known that the capacitance C of a capacitor can be obtained by the following equation: C = εS / d (ε: dielectric constant of substance between electrodes, S: area of electrode, d: distance between electrodes). From this equation, it is desirable that the areas of the first conductive film 102 and the second conductive film 103 be as large as possible within a range that can be formed on the IC chip 101. Alternatively, capacitive coupling can be enhanced by reducing the thickness of the substrate 106 as much as possible.

The place where the IC chip 101 is disposed is preferably a position where the current distribution on the third conductive film 104 and the fourth conductive film 105 is the highest. For example, in the case where the third conductive film 104 and the fourth conductive film 105 have a function as a half-wave dipole antenna, the current flowing through the third conductive film 104 and the fourth conductive film 105 is as shown in FIG. It is distributed as a sinusoidal distribution in the longitudinal direction. The current is highest at the end 104a and the end 105a on the side where the third conductive film 104 and the fourth conductive film 105 face each other, and the current is minimum at the opposite end 104b and end 105b. Therefore, as shown in FIG. 1, the first region 107 and the second region 108 are located in the vicinity of the end portion 104a and the end portion 105a on the side where the third conductive film 104 and the fourth conductive film 105 face each other. It is desirable to provide it.

Note that the shape of the antenna functioning by the third conductive film 104 and the fourth conductive film 105 is not limited to the half-wave dipole antenna shown as an example, and the third conductive film 104 and the fourth conductive film 105 Position where the length in the longitudinal direction is adjusted so as to resonate at the carrier frequency fc of the electromagnetic wave used for communication, and the IC chip 101 has a higher current distribution on the third conductive film 104 and the fourth conductive film 105 Can take any form. For example, a meander line having a shape obtained by bending a conductive film may be used, or a capacitively loaded dipole antenna having a changed end thickness may be used.

Although the first conductive film 102 and the second conductive film 103 are illustrated as rectangles, the present invention is not limited to this shape, and may be any shape suitable for high-frequency signal transmission, such as a circle and a polygon.

The third conductive film 104 and the fourth conductive film 105 are formed by screen printing in a predetermined pattern, or are formed by etching the conductive film, and include copper (Cu), aluminum (Al ), Silver (Ag), platinum (Pt), gold (Au), or the like.

The first conductive film 102 and the second conductive film 103 are formed by screen printing on the IC chip 101 in a pattern that circulates in a square shape using polymer-type conductive ink, and the conductive film is etched. It is possible to adopt various forming methods such as electroplating, electrostatic plating, or metal vapor deposition.

As the polymer type conductive ink in the present invention, for example, conductive fine particles such as silver powder, gold powder, platinum powder, aluminum powder, palladium powder, rhodium powder, carbon powder (carbon black, carbon nanotube, etc.) are mixed in the resin composition. The thing which was done is mentioned. The conductive film can be formed using a conductive material such as copper (Cu), aluminum (Al), silver (Ag), platinum (Pt), or gold (Au).

As the substrate 106, a dielectric substrate such as glass, polyimide, glass epoxy resin, fluororesin, ceramic, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), acrylic, paper, or the like is used. Can do. By using a flexible material for the substrate, a semiconductor device can be provided over a curved surface. Further, by controlling the thickness of the substrate 106, the strength of capacitive coupling between the conductive film functioning as an antenna and the conductive film electrically connected to the IC chip can be controlled.

As described above, by using the structure described in this embodiment mode, the conductive film functioning as an antenna and the IC chip do not need to be joined, and an electrical failure such as disconnection does not occur, so that the reliability of the semiconductor device can be improved. Can be improved. Further, the communication distance can be improved as compared with the case where communication is performed using only the antenna (on-chip) antenna formed on the IC chip. Further, since non-contact communication is possible without forming a resonance circuit on the IC chip, the wiring pattern formed on the IC chip is simplified, and the antenna configuration can be simplified. Further, since the IC chip can be mounted on the antenna regardless of the top and bottom of the IC chip, there is an effect that the process is simplified.

Note that this embodiment can be implemented in combination with the structure of the semiconductor device described in any of the other embodiments in this specification.

(Embodiment 2)
In this embodiment, a semiconductor device different from that in the above embodiment will be described with reference to FIGS.

The semiconductor device described in this embodiment includes an IC chip 101, a first conductive film 102, a second conductive film 103, a third conductive film 104, a fourth conductive film 105, and a substrate 106. An insulating film 401 is included. The first input / output terminal of the IC chip 101 and the first conductive film 102 are electrically connected, and the second input / output terminal of the IC chip 101 and the second conductive film 103 are electrically connected. Yes. The third conductive film 104 and the fourth conductive film 105 are formed over the substrate 106, and the IC chip 101 is disposed above the third conductive film 104 and the fourth conductive film 105 with an insulating film 401 interposed therebetween. Is done. The first conductive film 102 electrically connected to the IC chip 101 is disposed substantially in parallel with the first region 107 in the third conductive film 104 with the insulating film 401 interposed therebetween. In addition, the second conductive film 103 electrically connected to the IC chip 101 is disposed substantially parallel to the second region 108 in the fourth conductive film 105 with the insulating film 401 interposed therebetween. Note that the first region 107 refers to a region of the third conductive film 104 that overlaps with the first conductive film 102, and the second region 108 overlaps with the second conductive film 103 of the fourth conductive film 105. Refers to an area.

The third conductive film 104 is insulated from the first conductive film 102 and the insulating film 401, but is capacitively coupled to the first conductive film 102 in the first region 107. The fourth conductive film 105 is insulated by the second conductive film 103 and the insulating film 401, but is capacitively coupled to the second conductive film 103 in the second region 108.

4B is a cross-sectional view taken along a line AB in FIG. 4A. The IC chip 101, the third conductive film 104, and the fourth conductive film 105 are formed over the substrate 106. FIG. Yes. In the first embodiment, the first conductive film 102 and the first region 107 are disposed with the substrate 106 interposed therebetween, and the second conductive film 103 and the second region 108 are disposed with the substrate 106 interposed therebetween. On the other hand, in this embodiment, the insulating film 401 is provided, the first conductive film 102 and the second region 108 are arranged with the insulating film 401 interposed therebetween, and the second conductive film 103 and the second region 108 are insulated. It is characterized by being disposed through the film 401.

The third conductive film 104 is capacitively coupled to the first conductive film 102 in the first region 107, and the fourth conductive film 105 is capacitively coupled to the second conductive film 103 in the second region 108. This is because a capacitor using the first conductive film 102 and the third conductive film 104 in the first region 107 as an electrode and an insulating film 401 as a dielectric therebetween, the second conductive film 103 and the second region are used. This is because the capacitor 108 can be regarded as an electrode and the insulating film 401 is a dielectric therebetween.

In Embodiment 1, the substrate 106 functions as a dielectric inserted between the first conductive film 102 and the third conductive film 104 or between the second conductive film 103 and the fourth conductive film 105. However, in this embodiment mode, replacement with the insulating film 401 facilitates thinning, and the distance between the first conductive film 102 and the third conductive film 104, and the second conductive film 103 and the fourth conductive film. By narrowing the distance of the conductive film 105, there is an effect that the capacitive coupling can be strengthened.

Note that the insulating film 401 can be formed as a single layer or a stacked layer using a silicon oxide or a silicon nitride film by a sputtering method, a plasma CVD method, or the like. For example, a silicon oxide film, a silicon nitride oxide film, or a silicon oxynitride film can be formed.

As described above, by using the structure described in this embodiment mode, the conductive film functioning as an antenna and the IC chip do not need to be joined, and an electrical failure such as disconnection does not occur, so that the reliability of the semiconductor device can be improved. Can be improved. Further, the communication distance can be improved as compared with the case where communication is performed using only the antenna (on-chip) antenna formed on the IC chip. Further, since non-contact communication is possible without forming a resonance circuit on the IC chip, the wiring pattern formed on the IC chip is simplified, and the antenna configuration can be simplified. Further, since the IC chip can be mounted on the antenna regardless of the top and bottom of the IC chip, there is an effect that the process is simplified. Further, by selecting the thickness and material of the insulating film 401, the capacitive coupling between the conductive film provided over the IC chip and the conductive film functioning as an antenna can be increased, and the communication distance can be improved.

Note that this embodiment can be implemented in combination with the structure of the semiconductor device described in any of the other embodiments in this specification.

(Embodiment 3)
In this embodiment, a semiconductor device different from that in the above embodiment is described with reference to FIGS.

A fifth conductive film 501 illustrated in FIG. 5 is obtained by electrically connecting the end portion 104b of the third conductive film 104 and the end portion 105b of the fourth conductive film 105 illustrated in FIG. Other functions and methods of using the fifth conductive film 501 are the same as those of the third conductive film 104 and the fourth conductive film 105 shown in FIGS.

For the arrangement method of the IC chip 101, the configuration described in the above embodiment may be applied. For example, in the structure illustrated in FIG. 5A, the fifth conductive film 501 is formed over one surface of the substrate 106, and the IC chip 101 is disposed over the other surface of the substrate 106, which is illustrated in FIG. Further, the third conductive film 104 and the fourth conductive film 105 can be regarded as being replaced with the fifth conductive film 501. 5B, the fifth conductive film 501 is formed over one surface of the substrate 106, and the IC chip 101 is disposed over the fifth conductive film 501 with the insulating film 401 interposed therebetween. Therefore, it can be considered that the third conductive film 104 and the fourth conductive film 105 illustrated in FIG. 4 are replaced with the fifth conductive film 501. The form shown in FIGS. 5A and 5B can be selectively used by a practitioner depending on the effect obtained by each configuration.

As described above, by using the structure described in this embodiment mode, the conductive film functioning as an antenna and the IC chip do not need to be joined, and an electrical failure such as disconnection does not occur, so that the reliability of the semiconductor device can be improved. Can be improved. Further, the communication distance can be improved as compared with the case where communication is performed using only the antenna (on-chip) antenna formed on the IC chip. Further, since non-contact communication is possible without forming a resonance circuit on the IC chip, the wiring pattern formed on the IC chip is simplified, and the antenna configuration can be simplified. Further, since the IC chip can be mounted on the antenna regardless of the top and bottom of the IC chip, there is an effect that the process is simplified.

Note that this embodiment can be implemented in combination with the structure of the semiconductor device described in any of the other embodiments in this specification.

(Embodiment 4)
In this embodiment, a semiconductor device different from that in the above embodiment will be described with reference to FIGS.

In FIG. 1, the first conductive film 102 and the second conductive film 103 are formed on the same surface of the IC chip 101. In this embodiment mode, as shown in FIG. A first conductive film 102 is formed on one surface of the IC chip, and a second conductive film 103 is formed on another surface of the IC chip 101 as shown in FIG. 6B, as shown in FIG. 6C. As described above, the second conductive film 103 and the first conductive film 102 are different from the above-described embodiment in that they are formed on separate upper and lower surfaces of the IC chip 101.

Next, an example of a specific configuration of the semiconductor device 300 according to the present embodiment will be described with reference to FIGS. Note that FIG. 6E is a cross-sectional view taken along a line AB in FIG.

The third conductive film 104 is formed on one surface of the first substrate 601, and the fourth conductive film 105 is formed on one surface of the second substrate 602. The conductive films 105 are provided upside down 180 degrees via the IC chip 101. Further, the IC chip 101 is arranged so as to be sandwiched between the other surface of the first substrate 601 and the other surface of the second substrate 602.

The first conductive film 102 formed on one surface of the IC chip 101 is disposed on the other surface of the first substrate 601 and substantially parallel to the third conductive film 104 with the first substrate 601 interposed therebetween. Placed in. In addition, the second conductive film 103 is disposed on the other surface of the second substrate 602 and is disposed substantially parallel to the fourth conductive film 105 with the second substrate 602 interposed therebetween. Note that the third conductive film 104 is insulated from the first conductive film 102 and the first substrate 601, but is capacitively coupled to the first conductive film 102 in the first region 107. The fourth conductive film 105 is insulated by the second conductive film 103 and the second substrate 602, but is capacitively coupled to the second conductive film 103 in the second region 108.

As the first substrate 601 and the second substrate 602, glass, polyimide, glass epoxy resin, fluororesin, ceramic, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), acrylic, A dielectric substrate such as paper can be used.

By forming the first conductive film 102 and the second conductive film 103 on different surfaces of the IC chip 101, the area of the first conductive film 102 and the area of the second conductive film 103 can be reduced. Since it is possible to take the same size as the area, capacitive coupling with the third conductive film 104 and the fourth conductive film 105 can be strengthened. Further, in the process of mounting the IC chip 101 on the third conductive film 104 and the fourth conductive film 105, the process can be simplified because the IC chip 101 can be mounted regardless of the top and bottom.

As described above, by using the structure described in this embodiment mode, the conductive film functioning as an antenna and the IC chip do not need to be joined, and an electrical failure such as disconnection does not occur, so that the reliability of the semiconductor device can be improved. Can be improved. Furthermore, the communication distance can be improved as compared with the case where communication is performed using only the antenna (on-chip) antenna formed on the IC chip. Further, since non-contact communication is possible without forming a resonance circuit on the IC chip, the wiring pattern formed on the IC chip is simplified, and the antenna configuration can be simplified. Further, since the IC chip can be mounted on the antenna regardless of the top and bottom of the IC chip, there is an effect that the process is simplified.

Note that this embodiment can be implemented in combination with the structure of the semiconductor device described in any of the other embodiments in this specification.

(Embodiment 5)
In this embodiment, a semiconductor device different from that in the above embodiment is described with reference to FIGS.

In FIG. 4, the first conductive film 102 and the second conductive film 103 are formed on the same surface of the IC chip 101. In this embodiment mode, the first conductive film 102 and the second conductive film 103 are formed on one surface of the IC chip 101. A conductive film 102 is formed, and a first insulating film 901 is formed over the IC chip 101 and the first conductive film 102 (FIGS. 7A and 7C). Further, a second conductive film 103 is formed on the other surface of the IC chip 101, and a second insulating film 902 is formed above the IC chip 101 and the second conductive film 103 (FIG. 7B). ), (C)). That is, as compared with the structure shown in the above embodiment mode, the second conductive film 102 and the third conductive film 104 are formed on separate upper and lower surfaces of the IC chip 101, and the IC chip 101 and the first conductive film are formed. A difference is that the first insulating film 901 is formed above the second insulating film 901 and the second insulating film 902 is formed below the IC chip 101 and the second conductive film 103.

Next, an example of a specific configuration of the semiconductor device 300 in the present embodiment will be described with reference to FIGS. Note that FIG. 7E is a cross-sectional view taken along a plane AB in FIG.

The third conductive film 104 is formed on the other surface of the first substrate 601, and the fourth conductive film 105 is formed on the other surface of the second substrate 602. The conductive films 105 are formed so as to face each other. The IC chip 101 is disposed so as to be sandwiched between the first conductive film 104 and the fourth conductive film 105. The first conductive film 102 formed on one surface of the IC chip 101 is disposed below the third conductive film 104 and is substantially parallel to the third conductive film 104 with the first insulating film 901 interposed therebetween. Placed in. In addition, the second conductive film 103 is disposed above the fourth conductive film 105 and is disposed substantially parallel to the fourth conductive film 105 with the second insulating film 902 interposed therebetween.

The third conductive film 104 is insulated from the first conductive film 102 and the first insulating film 901, but is capacitively coupled to the first conductive film 102 in the first region 107. The fourth conductive film 105 is insulated by the second conductive film 103 and the second insulating film 902, but is capacitively coupled to the second conductive film 103 in the second region 108.

The third conductive film 104 and the fourth conductive film 105 are formed so as to face each other. When the third conductive film 104 and the fourth conductive film 105 are bonded to the IC chip 101, one of the third conductive film 104 and the fourth conductive film 105 is provided. Since the portions may be in contact with each other to be electrically connected, an insulating film may be additionally provided in a portion where the third conductive film 104 and the fourth conductive film 105 overlap as illustrated in FIG.

In FIG. 8A, the insulating film 801 and the insulating film 802 are formed only in a portion where the third conductive film 104 and the fourth conductive film 105 may be in contact with each other in consideration of a margin at the time of bonding. It is the figure shown about. An insulating film 801 is formed so as to cover part of the third conductive film 104, and an insulating film 802 is formed so as to cover part of the fourth conductive film 105. The first conductive film 102 formed over the IC chip 101 is disposed below the third conductive film 104 and is substantially parallel to the first region 107 on the third conductive film 104 with the insulating film 801 interposed therebetween. The second conductive film 103 is disposed above the fourth conductive film 105 and is substantially parallel to the second region 108 on the fourth conductive film 105 with the insulating film 802 interposed therebetween. Be placed.

FIG. 8B illustrates the case where the insulating film 801 is formed so as to cover the entire surface of the third conductive film 104 and the insulating film 802 is formed so as to cover the entire surface of the fourth conductive film 105. is there. In these modified examples, the first conductive film 102 and the third conductive film 104 are insulated by the insulating film 801, and the second conductive film 103 is insulated from the fourth conductive film 105 by the insulating film 802. . Therefore, as shown in FIG. 7, the first insulating film 901 formed above the IC chip 101 and the first conductive film 102 is not necessarily provided, and the IC chip 101 and the second conductive film are not necessarily provided. Similarly, the second insulating film 902 formed above 103 is not necessarily provided.

Note that the configuration of the semiconductor device of this embodiment is illustrated in FIGS. 7 and 8, but the first insulating film 901, the second insulating film 902, the insulating film 801, and the insulating film 802 are illustrated. The third conductive film 104 and the fourth conductive film 105 are electrically insulated from each other, the first conductive film 102 and the third conductive film 104 are electrically insulated from each other, As long as the conductive film 103 and the fourth conductive film 105 are electrically insulated from each other, the present invention is not limited to the structure illustrated and can take various forms.

Note that the first insulating film 901 and the second insulating film 902 can be formed as a single layer or a stack of films containing silicon oxide or silicon nitride by a sputtering method, a plasma CVD method, or the like. . For example, a silicon oxide film, a silicon nitride oxide film, or a silicon oxynitride film can be formed.

The insulating film 801 and the insulating film 802 may be a resin film such as a polyimide thin film, a metal oxide film, or the like, and an insulating adhesive may also be used as the insulating film.

By forming the first conductive film 102 and the second conductive film 103 on different surfaces of the IC chip 101, the area of the first conductive film 102 and the area of the second conductive film 103 are the same as those of the IC chip 101. Since it is possible to take the same size as the area, capacitive coupling with the third conductive film 104 and the fourth conductive film 105 can be strengthened. In addition, since the IC chip 101 can be mounted on the third conductive film 104 and the fourth conductive film 105 regardless of the top of the IC chip 101, the process is simplified.

Note that this embodiment can be implemented in combination with the structure of the semiconductor device described in any of the other embodiments in this specification.

(Embodiment 6)
In this embodiment, a structure in the case where the semiconductor device described in any of the above embodiments is used as an RFID tag will be described with reference to drawings.

FIG. 9 shows a block diagram of the RFID tag shown in this embodiment mode.

The RFID tag 300 in FIG. 9 includes an antenna 301 and an IC chip 302. The IC chip 302 includes a rectifier circuit 303, a power supply circuit 304, a demodulation circuit 305, an oscillation circuit 306, a logic circuit 307, a memory control circuit 308, a memory circuit 309, a logic circuit 310, an amplifier 311, and a modulation circuit 312. Yes.

In the RFID tag 300, a communication signal received by the antenna 301 is input to the demodulation circuit 305 in the IC chip 302. The frequency of the received communication signal, that is, the signal transmitted / received between the antenna 301 and the reader / writer includes 13.56 MHz, 915 MHz, 2.45 GHz, and the like, which are set according to the ISO standard or the like. Of course, the frequency of the signal transmitted / received between the antenna 301 and the reader / writer is not limited to this. Any frequency of 300 MHz to 3 GHz, which is a low frequency, and 30 MHz to 300 MHz, which is an ultrashort wave, can be used. A signal transmitted and received between the antenna 301 and the reader / writer is a signal obtained by modulating a carrier wave. The modulation method of the carrier wave may be analog modulation or digital modulation, and may be any of amplitude modulation, phase modulation, frequency modulation, and spread spectrum. Preferably, amplitude modulation or frequency modulation is used.

The oscillation signal output from the oscillation circuit 306 is supplied to the logic circuit 307 as a clock signal. The modulated carrier wave is demodulated by the demodulation circuit 305. The demodulated signal is also sent to the logic circuit 307 and analyzed. The signal analyzed by the logic circuit 307 is sent to the memory control circuit 308. Based on the signal, the memory control circuit 308 controls the memory circuit 309, extracts the data stored in the memory circuit 309, and sends it to the logic circuit 310. The signal sent to the logic circuit 310 is encoded by the logic circuit 310 and then amplified by the amplifier 311. The modulation circuit 312 modulates the carrier wave by the signal. The reader / writer recognizes the signal from the RFID tag by the modulated carrier wave. On the other hand, the carrier wave entering the rectifier circuit 303 is rectified and then input to the power supply circuit 304. The power supply voltage thus obtained is supplied from the power supply circuit 304 to the demodulation circuit 305, the oscillation circuit 306, the logic circuit 307, the memory control circuit 308, the memory circuit 309, the logic circuit 310, the amplifier 311, the modulation circuit 312 and the like. Note that the power supply circuit 304 is not necessarily required, but here has a function of stepping down, boosting, and inverting the input voltage. As described above, the RFID tag operates.

Note that there is no particular limitation on the shape of the antenna in the antenna 301, and a coiled antenna, a dipole antenna, a folded dipole antenna, a slot antenna, a meander line antenna, a microstrip antenna, or the like may be used. Further, the IC chip 302 and the antenna 301 are not directly electrically connected, and exchange of information between the antenna 301 and the IC chip 302 is performed by capacitive coupling.

The rectifier circuit 303 may be a circuit that converts an AC signal induced by a carrier wave received by the antenna 301 into a DC signal.

Note that the RFID tag described in this embodiment may have a structure in which a battery 361 is provided as shown in FIG. 10 in addition to the structure shown in FIG. When the power supply voltage output from the rectifier circuit 303 is not sufficient to operate the IC chip 302, each circuit constituting the IC chip 302 from the battery 361, for example, the demodulation circuit 305, the oscillation circuit 306, the logic circuit 307, the memory A power supply voltage can be supplied to the control circuit 308, the memory circuit 309, the logic circuit 310, the amplifier 311, the modulation circuit 312, and the like. Note that the energy stored in the battery 361 is, for example, that of the power supply voltage output from the rectifier circuit 303 when the power supply voltage output from the rectifier circuit 303 is sufficiently higher than the power supply voltage necessary for operating the IC chip 302. What is necessary is just to charge the battery 361 for the excess of them. Further, by providing the RFID tag with an antenna and a rectifier circuit in addition to the antenna 301 and the rectifier circuit 303, energy stored in the battery 361 may be obtained from radio waves generated at random.

In addition, a battery means the battery which can recover | restore continuous use time by charging. In addition, it is preferable to use the battery formed in the sheet form as a battery, for example, size reduction is possible by using the lithium polymer battery using a gel-like electrolyte, a lithium ion battery, a lithium secondary battery, etc. Of course, any rechargeable battery may be used, such as a nickel metal hydride battery or a nickel cadmium battery, or a large-capacity capacitor.

A reader / writer can be provided even when capacitive coupling between a conductive film functioning as an antenna and a conductive film electrically connected to an IC chip is not sufficient by providing a battery in the RFID tag and supplying power from the battery. It becomes possible to communicate with.

Note that this embodiment can be implemented in combination with the structure of the semiconductor device described in any of the other embodiments in this specification.

(Embodiment 7)
In this embodiment, an example of a method for manufacturing the semiconductor device described in the above embodiment is described with reference to drawings. In this embodiment, the case where an element provided in an IC chip of a semiconductor device is provided using a thin film transistor over the same substrate will be described. Note that in this embodiment, a case where an element such as a thin film transistor is once provided over a supporting substrate and then transferred to a flexible substrate to form a semiconductor device is described.

First, a separation layer 702 is formed over one surface of a substrate 701, and then an insulating film 703 and an amorphous semiconductor film 704 (for example, a film containing amorphous silicon) serving as a base are formed (FIG. 11A). . Note that the separation layer 702, the insulating film 703, and the amorphous semiconductor film 704 can be formed successively.

As the substrate 701, a glass substrate, a quartz substrate, a metal substrate, a stainless steel substrate with an insulating film formed on one surface, a heat-resistant plastic substrate that can withstand the processing temperature in this step, or the like may be used. With such a substrate 701, there is no significant limitation on the area and shape thereof. For example, if the substrate 701 is a rectangular substrate having a side of 1 meter or more and a rectangular shape, productivity is remarkably improved. Can be made. Such an advantage is a great advantage compared to the case of using a circular silicon substrate. Note that although the separation layer 702 is provided over the entire surface of the substrate 701 in this step, the separation layer 702 may be selectively provided by a photolithography method after being provided over the entire surface of the substrate 701 as needed. In addition, although the separation layer 702 is formed so as to be in contact with the substrate 701, an insulating film serving as a base is formed so as to be in contact with the substrate 701 as necessary, and the separation layer 702 is formed so as to be in contact with the insulation film. May be.

For the separation layer 702, a metal film, a stacked structure of a metal film and a metal oxide film, or the like can be used. As the metal film, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nb), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), A single layer or a stack of films made of an element selected from ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or an alloy material or compound material containing the element as a main component To form. These materials can be formed by using various CVD methods such as a sputtering method and a plasma CVD method. A stacked structure of a metal film and a metal oxide film, after forming a metal film described above, a plasma treatment under an oxygen atmosphere or an N _{2 O} atmosphere, by performing heat treatment in an oxygen atmosphere or an N _{2 O} atmosphere The oxide or oxynitride of the metal film can be provided on the surface of the metal film. For example, in the case where a tungsten film is provided as a metal film by a sputtering method, a CVD method, or the like, a metal oxide film made of tungsten oxide can be formed on the tungsten film surface by performing plasma treatment on the tungsten film.

The insulating film 703 is formed as a single layer or a stack of a film containing silicon oxide or silicon nitride by a sputtering method, a plasma CVD method, or the like. In the case where the base insulating film has a two-layer structure, for example, a silicon nitride oxide film may be formed as the first layer and a silicon oxynitride film may be formed as the second layer. When the base insulating film has a three-layer structure, a silicon oxide film is formed as the first insulating film, a silicon nitride oxide film is formed as the second insulating film, and oxynitriding is performed as the third insulating film. A silicon film is preferably formed. Alternatively, a silicon oxynitride film may be formed as the first insulating film, a silicon nitride oxide film may be formed as the second insulating film, and a silicon oxynitride film may be formed as the third insulating film. The insulating film serving as a base functions as a blocking film that prevents impurities from entering from the substrate 701.

The semiconductor film 704 is formed with a thickness of 25 to 200 nm (preferably 30 to 150 nm) by sputtering, LPCVD, plasma CVD, or the like. As the semiconductor film 704, for example, an amorphous silicon film may be formed.

Next, crystallization is performed by irradiating the amorphous semiconductor film 704 with laser light. Note that the amorphous semiconductor film 704 is crystallized by a combination of laser light irradiation, a thermal crystallization method using an RTA or a furnace annealing furnace, a thermal crystallization method using a metal element that promotes crystallization, or the like. You may go. After that, the obtained crystalline semiconductor film is etched into a desired shape to form crystalline semiconductor films 704a to 704d, and a gate insulating film 705 is formed so as to cover the semiconductor films 704a to 704d (FIG. 11 ( B)).

An example of a manufacturing process of the crystalline semiconductor films 704a to 704d will be briefly described below. First, an amorphous semiconductor film (for example, an amorphous silicon film) with a thickness of 50 to 60 nm is formed using a plasma CVD method. Form. Next, after a solution containing nickel, which is a metal element that promotes crystallization, is held on the amorphous semiconductor film, the amorphous semiconductor film is subjected to dehydrogenation treatment (500 ° C., 1 hour), heat Crystallization treatment (550 ° C., 4 hours) is performed to form a crystalline semiconductor film. Thereafter, laser light is irradiated, and crystalline semiconductor films 704a to 704d are formed by using a photolithography method. Note that the amorphous semiconductor film may be crystallized only by laser light irradiation without performing thermal crystallization using a metal element that promotes crystallization.

As the laser oscillator, a continuous wave laser beam (CW laser beam) or a pulsed laser beam (pulse laser beam) can be used. The laser beam that can be used here is a gas laser such as Ar laser, Kr laser, or excimer laser, single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline ( (Ceramics) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ with one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta added as dopants Lasers oscillated from one or more of laser, glass laser, ruby laser, alexandrite laser, Ti: sapphire laser, copper vapor laser or gold vapor laser as a medium can be used. By irradiating the fundamental wave of such a laser beam and the second to fourth harmonics of these fundamental waves, a crystal having a large grain size can be obtained. For example, the second harmonic (532 nm) or the third harmonic (355 nm) of an Nd: YVO ₄ laser (fundamental wave 1064 nm) can be used. In this case, a laser power density is about 0.01 to 100 MW / cm ² (preferably 0.1 to 10 MW / cm ²⁾ is required. Then, irradiation is performed at a scanning speed of about 10 to 2000 cm / sec. Note that single crystal YAG, YVO ₄ , forsterite (Mg ₂ SiO ₄ ), YAlO ₃ , GdVO ₄ , or polycrystalline (ceramic) YAG, Y ₂ O ₃ , YVO ₄ , YAlO ₃ , GdVO ₄ , dopants Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta as a medium, a laser, Ar ion laser, or Ti: sapphire laser with one or more added as a medium should be continuously oscillated It is also possible to perform pulse oscillation at an oscillation frequency of 10 MHz or more by performing Q switch operation, mode synchronization, or the like. When a laser beam is oscillated at an oscillation frequency of 10 MHz or higher, the semiconductor film is irradiated with the next pulse during the period from when the semiconductor film is melted by the laser to solidification. Therefore, unlike the case of using a pulse laser having a low oscillation frequency, the solid-liquid interface can be continuously moved in the semiconductor film, so that crystal grains continuously grown in the scanning direction can be obtained.

Next, a gate insulating film 705 is formed to cover the crystalline semiconductor films 704a to 704d. The gate insulating film 705 is formed by a single layer or a stack of films containing silicon oxide or silicon nitride by a CVD method, a sputtering method, or the like. Specifically, a film containing silicon oxide, a film containing silicon oxynitride, or a film containing silicon nitride oxide is formed as a single layer or a stacked layer.

Alternatively, the gate insulating film 705 may be formed by performing high-density plasma treatment on the semiconductor films 704a to 704d and oxidizing or nitriding the surface. For example, it is formed by plasma treatment in which a rare gas such as He, Ar, Kr, or Xe and a mixed gas such as oxygen, nitrogen oxide (NO ₂ ), ammonia, nitrogen, or hydrogen are introduced. When excitation of plasma in this case is performed by introducing microwaves, high-density plasma can be generated at a low electron temperature. The surface of the semiconductor film can be oxidized or nitrided by oxygen radicals (which may include OH radicals) or nitrogen radicals (which may include NH radicals) generated by this high-density plasma.

By such treatment using high-density plasma, an insulating film with a thickness of 1 to 20 nm, typically 5 to 10 nm, is formed over the semiconductor film. Since the reaction in this case is a solid-phase reaction, the interface state density between the insulating film and the semiconductor film can be extremely low. Such high-density plasma treatment directly oxidizes (or nitrides) a semiconductor film (crystalline silicon or polycrystalline silicon), so that the thickness of the formed insulating film ideally has extremely small variation. can do. In addition, since oxidation is not strengthened even at the crystal grain boundaries of crystalline silicon, a very favorable state is obtained. That is, the surface of the semiconductor film is solid-phase oxidized by the high-density plasma treatment shown here, thereby forming an insulating film with good uniformity and low interface state density without causing an abnormal oxidation reaction at the grain boundaries. can do.

As the gate insulating film, only an insulating film formed by high-density plasma treatment may be used, or an insulating film such as silicon oxide, silicon oxynitride, or silicon nitride is deposited by a CVD method using plasma or thermal reaction. , May be laminated. In any case, a transistor formed by including an insulating film formed by high-density plasma in part or all of the gate insulating film can reduce variation in characteristics.

Further, the semiconductor films 704a to 704d obtained by scanning and crystallizing in one direction while irradiating the semiconductor film with a continuous wave laser or a laser beam oscillating at a frequency of 10 MHz or more are provided in the scanning direction of the beam. There is a characteristic that crystals grow. By arranging the transistors in accordance with the scanning direction in the channel length direction (the direction in which carriers flow when a channel formation region is formed) and combining the gate insulating layer, characteristic variation is small and field effect mobility is reduced. A high thin film transistor (TFT) can be obtained.

Next, a first conductive film and a second conductive film are stacked over the gate insulating film 705. Here, the first conductive film is formed with a thickness of 20 to 100 nm by a plasma CVD method, a sputtering method, or the like. The second conductive film is formed with a thickness of 100 to 400 nm. The first conductive film and the second conductive film include tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium ( Nb) or the like or an alloy material or a compound material containing these elements as a main component. Alternatively, a semiconductor material typified by polycrystalline silicon doped with an impurity element such as phosphorus is used. Examples of the combination of the first conductive film and the second conductive film include a tantalum nitride film and a tungsten film, a tungsten nitride film and a tungsten film, a molybdenum nitride film and a molybdenum film, and the like. Since tungsten and tantalum nitride have high heat resistance, heat treatment for thermal activation can be performed after the first conductive film and the second conductive film are formed. In the case of a three-layer structure instead of a two-layer structure, a stacked structure of a molybdenum film, an aluminum film, and a molybdenum film is preferably employed.

Next, a resist mask is formed using a photolithography method, and an etching process is performed to form the gate electrode and the gate line, so that the gate electrode 707 is formed over the semiconductor films 704a to 704d.

Next, a resist mask is formed by photolithography, and an impurity element imparting n-type conductivity is added to the crystalline semiconductor films 704a to 704d at a low concentration by ion doping or ion implantation. As the impurity element imparting n-type conductivity, an element belonging to Group 15 may be used. For example, phosphorus (P) or arsenic (As) is used.

Next, an insulating film is formed so as to cover the gate insulating film 705 and the gate electrode 707. The insulating film is formed by a single layer or a stacked layer of a film containing an inorganic material such as silicon, silicon oxide or silicon nitride, or a film containing an organic material such as an organic resin by plasma CVD or sputtering. To do. Next, the insulating film is selectively etched by anisotropic etching mainly in the vertical direction, so that an insulating film 708 (also referred to as a sidewall) in contact with the side surface of the gate electrode 707 is formed. The insulating film 708 is used as a doping mask when an LDD (Lightly Doped Drain) region is formed later.

Next, an impurity element imparting n-type conductivity is added to the crystalline semiconductor films 704a to 704d using a resist mask formed by a photolithography method, the gate electrode 707, and the insulating film 708 as masks. An n-type impurity region 706a (also referred to as an LDD region), a second n-type impurity region 706b, and a channel region 706c are formed (FIG. 11C). The concentration of the impurity element contained in the first n-type impurity region 706a is lower than the concentration of the impurity element in the second n-type impurity region 706b.

Subsequently, an insulating film is formed as a single layer or a stacked layer so as to cover the gate electrode 707, the insulating film 708, and the like, so that thin film transistors 730a to 730d are formed (FIG. 11D). Insulating film is formed by CVD, sputtering, SOG, droplet discharge, screen printing, etc., inorganic materials such as silicon oxide and silicon nitride, polyimide, polyamide, benzocyclobutene, acrylic, epoxy, etc. A single layer or a stacked layer is formed using an organic material, a siloxane material, or the like. For example, when the insulating film has a two-layer structure, a silicon nitride oxide film can be formed as the first insulating film 709 and a silicon oxynitride film can be formed as the second insulating film 710.

Note that before the insulating films 709 and 710 are formed or after one or more thin films of the insulating films 709 and 710 are formed, the crystallinity of the semiconductor film is restored and the activity of the impurity element added to the semiconductor film is increased. Heat treatment for the purpose of hydrogenation of the semiconductor film is preferably performed. For the heat treatment, thermal annealing, laser annealing, RTA, or the like is preferably applied.

Next, the insulating films 709 and 710 and the like are etched by photolithography to form contact holes that expose the second n-type impurity regions 706b. Subsequently, a conductive film is formed so as to fill the contact hole, and the conductive film is selectively etched to form a conductive film 731. Note that silicide may be formed on the surfaces of the semiconductor films 704a to 704d exposed in the contact holes before the conductive film is formed.

The conductive film 731 is formed by a CVD method, a sputtering method, or the like by aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper ( Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), carbon (C), silicon (Si), or an alloy material containing these elements as a main component or The compound material is formed as a single layer or a stacked layer. The alloy material containing aluminum as a main component corresponds to, for example, a material containing aluminum as a main component and containing nickel, or an alloy material containing aluminum as a main component and containing nickel and one or both of carbon and silicon. For example, the conductive film 731 may have a stacked structure of a barrier film, an aluminum silicon (Al—Si) film, and a barrier film, or a stacked structure of a barrier film, an aluminum silicon (Al—Si) film, a titanium nitride film, and a barrier film. . Note that the barrier film corresponds to a thin film formed of titanium, titanium nitride, molybdenum, or molybdenum nitride. Aluminum and aluminum silicon are suitable materials for forming the conductive film 731 because they have low resistance and are inexpensive. In addition, when an upper layer and a lower barrier layer are provided, generation of hillocks of aluminum or aluminum silicon can be prevented. In addition, when a barrier film made of titanium, which is a highly reducing element, is formed, even if a thin natural oxide film is formed on the crystalline semiconductor film, the natural oxide film is reduced, and the crystalline semiconductor film is excellent. Contact can be made.

Next, an insulating film 711 is formed so as to cover the conductive film 731, and a conductive film 712 is formed over the insulating film 711 so as to be electrically connected to the conductive film 731 (FIG. 12A). The insulating film 711 is formed as a single layer or a stacked layer using an inorganic material or an organic material by a CVD method, a sputtering method, an SOG method, a droplet discharge method, a screen printing method, or the like. The insulating film 711 is preferably formed with a thickness of 0.75 to 3 μm. The conductive film 712 can be formed using any of the materials described for the conductive film 731 described above.

Next, conductive films 713 a and 713 b are formed over the conductive film 712. The conductive films 713a and 713b are formed of a conductive material by a CVD method, a sputtering method, a droplet discharge method, a screen printing method, or the like (FIG. 12B). Preferably, the conductive films 713a and 713b each include an element selected from aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), and gold (Au), or an alloy containing these elements as a main component. The material or compound material is formed as a single layer or a stacked layer. Here, a paste containing silver is formed over the conductive film 712 by a screen printing method, and then heat treatment is performed at 50 to 350 degrees to form conductive films 713a and 713b. Note that the conductive films 713 a and 713 b can be provided so as to be electrically connected to the conductive film 731 without providing the insulating film 711 and the conductive film 712.

The conductive film 713a can function as an electrode for capacitive coupling with an antenna formed later in the semiconductor device, and the conductive film 713b can function as an electrode for connecting an external electrode to an element such as a transistor. Note that although the example in which the conductive films 713a and 713b are provided so as to be electrically connected to the conductive film 712 after the conductive film 712 is provided is shown here, the conductive films 712 are not provided without the conductive films 713a and 713b. Can be provided as an electrode for capacitive coupling or an electrode for connecting to an external electrode.

Next, an insulating film 714 is formed so as to cover the conductive films 712, 713a, and 713b, and the insulating film 714 is selectively etched by photolithography to form an opening 715 that exposes the conductive film 713b (FIG. 12 (C)). The insulating film 714 is formed as a single layer or a stacked layer using an inorganic material or an organic material by a CVD method, a sputtering method, an SOG method, a droplet discharge method, a screen printing method, or the like.

Next, a layer 732 including the thin film transistors 730 a to 730 d and the like (hereinafter also referred to as “layer 732”) is separated from the substrate 701. Here, after the opening 716 is formed by irradiation with laser light (for example, UV light) (FIG. 13A), the layer 732 can be peeled from the substrate 701 using physical force. Note that when the surface to be peeled is wetted with an aqueous solution such as water or ozone water, the element provided in the semiconductor device can be prevented from being destroyed by static electricity or the like. In addition, the substrate 701 from which the layer 732 is peeled is preferably reused for cost reduction.

Here, after the insulating film is etched by laser light irradiation to form the opening 716, one surface of the layer 732 (the exposed surface of the insulating film 714) is bonded to the first sheet material 717 to form the substrate. It completely peels from 701 (FIG. 13B). As the first sheet material 717, for example, a heat peeling tape whose adhesive strength is weakened by applying heat can be used.

Next, the second sheet material 718 is provided on the other surface (the peeled surface) of the layer 732, and then one or both of heat treatment and pressure treatment are performed to bond the second sheet material 718. Further, when the second sheet material 718 is provided, the first sheet material 717 is peeled off at the same time or after the second sheet material 718 is provided (FIG. 14A). As the second sheet material 718, a hot melt film or the like can be used. In the case where a heat peeling tape is used as the first sheet material 717, the heat can be peeled using heat applied when the second sheet material 718 is bonded.

Further, as the second sheet material 718, a film provided with an antistatic measure for preventing static electricity or the like (hereinafter referred to as an antistatic film) can be used. Examples of the antistatic film include a film in which an antistatic material is dispersed in a resin, a film on which an antistatic material is attached, and the like. The film provided with an antistatic material may be a film provided with an antistatic material on one side, or a film provided with an antistatic material on both sides. Furthermore, a film provided with an antistatic material on one side may be attached to the layer so that the surface provided with the antistatic material is on the inside of the film, or on the outside of the film. It may be pasted. Note that the antistatic material may be provided on the entire surface or a part of the film. As the antistatic material here, surfactants such as metals, oxides of indium and tin (ITO), amphoteric surfactants, cationic surfactants and nonionic surfactants can be used. . In addition, as the antistatic material, a resin material containing a crosslinkable copolymer polymer having a carboxyl group and a quaternary ammonium base in the side chain can be used. An antistatic film can be obtained by sticking, kneading, or applying these materials to a film. By sealing with an antistatic film, it is possible to prevent the semiconductor element from being adversely affected by external static electricity or the like when handled as a product.

Next, an element group 733 is formed by forming a conductive film 719 so as to cover the opening 715 (FIG. 14B). Note that electrical connection may be improved by irradiating the conductive films 712 and 713 with laser light before or after the conductive film 719 is formed. The conductive film 719 is formed using a conductive material by a CVD method, a sputtering method, a droplet discharge method, a screen printing method, or the like. For example, an element selected from aluminum (Al), titanium (Ti), silver (Ag), copper (Cu), gold (Au), or an alloy material or compound material containing these elements as a main component, a single layer Or it forms by lamination.

Next, a substrate 725 provided with a battery 721 and a conductive film 726 functioning as an antenna is attached to the element group 733 (FIG. 15). Specifically, the conductive film 722 functioning as an electrode of the battery 721 and the conductive film 719 of the element group 733 are provided to be electrically connected to each other. Here, the battery 721 and the element group 733 are bonded using a resin 723 having adhesiveness. Further, the conductive film 722 and the conductive film 719 are electrically connected using conductive particles 724 included in the resin 723. A substrate 725 provided with a conductive film 726 functioning as an antenna is attached to the element group 733 using an adhesive resin 727 so that the conductive film 726 and the conductive film 713a face each other.

As the battery 721, for example, a lithium battery, preferably a lithium polymer battery using a gel electrolyte, a lithium ion battery, or the like can be used. In particular, the semiconductor device can be reduced in size and thinned by being formed into a sheet shape. It is. Of course, any rechargeable battery may be used, such as a nickel metal hydride battery, a nickel cadmium battery, an organic radical battery, a lead storage battery, an air secondary battery, a nickel zinc battery, or a silver zinc battery. In addition, a large-capacity capacitor may be used. As a large-capacity capacitor, it is desirable that the opposing area of the electrodes is large, and for example, an electric double layer capacitor can be used.

Note that here, the conductive film 726 functioning as an antenna provided over the substrate 725 and the element provided in the element group 733 are provided without being electrically connected. That is, in the semiconductor device described in this embodiment, the conductive film 726 and the conductive film 713a are capacitively coupled, so that information is transmitted and received between the semiconductor device and an external reader / writer. In this manner, the provision of the element provided in the element group 733 and the conductive film 726 functioning as an antenna do not need to be directly connected, so that a reduction in yield caused by poor connection or the like can be reduced.

Note that a substrate provided with the conductive film 726 functioning as an antenna may be provided on the opposite surface of the element group 733.

Specifically, after the layer 732 is peeled from the substrate 701 in FIG. 13B, a substrate 725 provided with a conductive film 726 functioning as an antenna is attached to the other surface (the peeled surface) of the layer 732. FIG. 16A is provided. For example, a substrate 725 provided with a conductive film 726 functioning as an antenna is attached to the other surface of the element group 733 using an adhesive resin 727. Also in this case, since there is no need to electrically connect the conductive film 726 functioning as an antenna and the elements provided in the element group 733, there is no fear of poor connection or the like. After that, after providing the conductive film 719 as described above, the battery 721 may be attached and provided (FIG. 16B). Thus, by providing an external antenna and a battery on different surfaces of the element group 733, a larger battery or antenna can be provided.

Note that although a case where a thin film transistor is provided as an element provided in an IC chip is described in this embodiment mode, the present invention is not limited to this. An element such as a transistor provided in the IC chip may be formed using an SOI substrate, or a transistor having a channel formation region may be formed using a semiconductor substrate such as Si.

The method for manufacturing a semiconductor device described in this embodiment can be applied to the semiconductor devices in other embodiments described in this specification.

(Embodiment 8)
In this embodiment mode, an example of a usage mode of a semiconductor device of the present invention will be described. The application of the semiconductor device of the present invention is wide-ranging, and can be applied to any product that can be used for production and management by clarifying information such as the history of an object without contact. For example, banknotes, coins, securities, certificate documents, bearer bonds, packaging containers, books, recording media, personal belongings, vehicles, foods, clothing, health supplies, daily necessities, chemicals, etc. It can be provided and used in an electronic device or the like. These examples will be described with reference to FIG.

Banknotes and coins are money that circulates in the market, and include those that are used in the same way as money in a specific area (cash vouchers), commemorative coins, and the like. Securities refer to checks, securities, promissory notes, etc. (FIG. 17A). The certificate refers to a driver's license, a resident card, etc. (FIG. 17B). Bearer bonds refer to stamps, gift tickets, various gift certificates, etc. (FIG. 17C). Packaging containers refer to wrapping paper for lunch boxes, plastic bottles, and the like (FIG. 17D). Books refer to books, books, and the like (FIG. 17E). The recording media refer to DVD software, video tapes, and the like (FIG. 17F). The vehicles refer to vehicles such as bicycles, ships, and the like (FIG. 17G). Personal belongings refer to bags, glasses, and the like (FIG. 17H). Foods refer to food products, beverages, and the like. Clothing refers to clothing, footwear, and the like. Health supplies refer to medical equipment, health equipment, and the like. Livingware refers to furniture, lighting equipment, and the like. Chemicals refer to pharmaceuticals, agricultural chemicals, and the like. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (television receivers, thin television receivers), cellular phones, and the like.

Forgery can be prevented by providing the semiconductor device 80 on bills, coins, securities, certificates, bearer bonds, and the like. In addition, by providing semiconductor devices 80 in personal items such as packaging containers, books, recording media, personal items, foods, daily necessities, electronic devices, etc., the efficiency of inspection systems and rental store systems will be improved. Can do. By providing the semiconductor device 80 in vehicles, health supplies, medicines, etc., it is possible to prevent counterfeiting and theft, and in the case of medicines, it is possible to prevent mistakes in taking medicines. As a method of providing the semiconductor device 80, the semiconductor device 80 is provided by being attached to the surface of the article or embedded in the article. For example, a book may be embedded in paper, and a package made of an organic resin may be embedded in the organic resin.

In this way, by providing semiconductor devices in packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., it is possible to improve the efficiency of inspection systems and rental store systems. it can. Further, forgery or theft can be prevented by providing a semiconductor device in the vehicles. Moreover, by embedding it in creatures such as animals, it is possible to easily identify individual creatures. For example, by embedding a semiconductor device equipped with a sensor in a living creature such as livestock, it is possible to easily manage health conditions such as body temperature as well as the year of birth, gender or type. In particular, by using the semiconductor device described in any of the above embodiments, the semiconductor device can be prevented from being defective due to poor connection between the antenna and the IC chip even when the semiconductor device is provided on a curved surface or the product is bent. it can.

The method for manufacturing a semiconductor device described in this embodiment can be applied to the semiconductor devices in other embodiments described in this specification.

FIG. 6 illustrates a structural example of a semiconductor device of the present invention. 4A and 4B illustrate a communication method between a semiconductor device of the present invention and an external device. 4A and 4B illustrate current distribution received by a semiconductor device of the present invention. FIG. 6 illustrates a structural example of a semiconductor device of the present invention. FIG. 6 illustrates a structural example of a semiconductor device of the present invention. FIG. 6 illustrates a structural example of a semiconductor device of the present invention. FIG. 6 illustrates a structural example of a semiconductor device of the present invention. FIG. 6 illustrates a structural example of a semiconductor device of the present invention. FIG. 6 illustrates a structural example of a semiconductor device of the present invention. FIG. 6 illustrates a structural example of a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention.

Explanation of symbols

80 semiconductor device 101 IC chip 102 conductive film 103 conductive film 104 conductive film 105 conductive film 106 substrate 107 region 108 region 201 semiconductor device 202 IC module 203 reader / writer 204 antenna 300 semiconductor device 301 antenna 302 IC chip 303 rectifier circuit 304 power supply circuit 305 Demodulation circuit 306 Oscillation circuit 307 Logic circuit 308 Memory control circuit 309 Memory circuit 310 Logic circuit 311 Amplifier 312 Modulation circuit 361 Battery 401 Insulating film 501 Conductive film 601 Substrate 602 Insulating film 701 Substrate 902 Insulating film 702 Peeling layer 703 Insulating film 704 Semiconductor film 705 Gate insulating film 707 Gate electrode 708 Insulating film 709 Insulating film 710 Insulating film 711 Insulating film 712 Conductive film 713 Conductive film 714 Insulating film 715 Opening 716 Opening 717 Sheet material 718 Sheet material 719 Conductive film 721 Battery 722 Conductive film 723 Resin 724 Conductive particle 725 Substrate 726 Conductive film 727 Resin 731 Conductive film 732 Layer 733 Element group 801 Insulating film 802 Insulating film 104a End 104b Edge 105a edge 105b edge 704a semiconductor film 706a n-type impurity region 706b n-type impurity region 706c channel region 713a conductive film 713b conductive film 730a thin film transistor

Claims (5)

A glass substrate;
A first conductive film provided on one surface of the glass substrate;
A second conductive film provided on one surface of the glass substrate;
An IC chip provided on one surface side of the glass substrate so as to overlap the first conductive film and the second conductive film;
A third conductive film provided on the other surface of the glass substrate;
A fourth conductive film provided on the other surface of the glass substrate,
The first input / output terminal of the IC chip and the first conductive film are electrically connected,
The second input / output terminal of the IC chip and the second conductive film are electrically connected,
The first conductive film and the third conductive film form a first capacitor through the glass substrate,
The second conductive film and the fourth conductive film form a second capacitor through the glass substrate,
The third conductive film and the fourth conductive film function as an antenna,
The IC chip transmits and receives data to and from the outside through the first capacitor or the second capacitor. IC chip,
A first conductive film provided on one surface of the IC chip;
A second conductive film provided on the other surface of the IC chip;
A third conductive film forming a first capacitor via the first conductive film and the first substrate;
A second conductive film that forms a second capacitor through the second conductive film and a second substrate;
On one surface side of the IC chip, the first conductive film, the first substrate, and the third conductive film are stacked in this order from the IC chip side.
On the other surface side of the IC chip, the second conductive film, the second substrate, and the fourth conductive film are stacked in this order from the IC chip side.
The third conductive film and the fourth conductive film function as an antenna,
The IC chip transmits and receives data to and from the outside through the first capacitor or the second capacitor. IC chip,
A first conductive film provided on one surface of the IC chip;
A second conductive film provided on the other surface of the IC chip;
A third conductive film forming a first capacitor via the first conductive film and the first insulating film;
A second conductive film that forms a second capacitor through the second conductive film and a second insulating film;
On the one surface side of the IC chip, the first conductive film, the first insulating film, and the third conductive film are stacked in this order from the IC chip side.
On the other surface side of the IC chip, the second conductive film, the second insulating film, and the fourth conductive film are stacked in this order from the IC chip side.
The third conductive film and the fourth conductive film function as an antenna,
The IC chip transmits and receives data to and from the outside through the first capacitor or the second capacitor. The semiconductor device according to claim 3.
On the opposite side of the third conductive film from the IC chip, a first substrate is provided,
A semiconductor device, wherein a second substrate is provided on a side of the fourth conductive film opposite to the IC chip. The semiconductor device according to claim 3 or claim 4,
The semiconductor device, wherein the first insulating film covers the third conductive film.

Images