JP5096412B2 - Oxide film forming apparatus and oxide film forming method - Google Patents

Description

  The present invention relates to an oxide film forming apparatus and an oxide film forming method for forming an oxide film on a substrate surface by a CVD method under a pressure condition near atmospheric pressure.

As a method of forming a silicon oxide film, conventionally, TMOS [tetramethoxysilane:
Si (OCH ₃ ) ₄ ] / [O ₂ ] based low pressure plasma method or TEOS [tetraethoxysilane: Si (OC ₂ H ₅ ) ₄ ] / [O ₃ ] based atmospheric pressure CVD method is mainly used. . However, in these film forming methods, there is a point to be improved in achieving both good film quality (reduction of residual carbon and residual OH, etc.) and good coverage.

In consideration of such points, Patent Document 1 discloses a mixed gas of TEOS and low-concentration ozone gas mixed with high-concentration ozone gas on the substrate surface, and Patent Document 2 discloses TEOS and ozone gas. A method is disclosed in which a silicon-containing insulating film having a low content of moisture, hydrogen, carbon, or the like and having good coverage is obtained by spraying a mixed gas with H ₂ O gas on the substrate surface.

  Patent Document 3 discloses a method of obtaining a silicon-containing insulating film having a low content of moisture, hydrogen, carbon, or the like and having good coverage by forming a film by plasmaizing TMOS and an oxidizing gas. Has been. In the method described in this publication, film quality, coverage, and film formation speed are controlled by adjusting parameters such as temperature, pressure, high-frequency power, and reaction gas flow rate.

Japanese Patent Publication No. 08-6181 Japanese Patent Laid-Open No. 08-306683 JP 2001-144084 A

  By the way, in the film-forming method of patent document 1 and 2, since it is based on an atmospheric pressure CVD method, there exists a problem that a film-forming speed | rate is slow and a leak current value is large.

  On the other hand, since the film forming method described in Patent Document 3 is a decompression process, it requires a vacuum facility and has a problem that throughput is poor because a lot of time is required for evacuation. Patent Document 3 only shows a process under reduced pressure, and does not disclose CVD under normal pressure.

Here, the present inventors have used TMOS / CVD using atmospheric pressure plasma as CVD under atmospheric pressure.
When film formation by the CVD method using O ₂ -based gas was experimentally performed, the film formation speed and film quality were improved as compared with TEOS / O ₃ -based atmospheric pressure CVD, but the film was still sufficiently satisfactory. The result was not obtained. This is because the plasma generation method may be different from the low pressure, and the parameters of the plasma CVD at the low pressure cannot be directly applied to the processing under the normal pressure. In particular, it is considered that it is difficult to suppress the film quality and the film stress by high frequency power of several hundred kHz applied to the electrode on the voltage application side under normal pressure.

  The present invention has been made in view of such circumstances, and an oxide film forming apparatus and an oxide film capable of forming an oxide film with good film quality and coverage at a high film formation rate in CVD under normal pressure An object is to provide a forming method.

In order to achieve the above object, the present inventors have conducted various researches and experiments. As a result, in the plasma CVD method under normal pressure, even when TMOS / O ₂ is simultaneously introduced into the plasma, a certain degree of effect is obtained. It can be expected, however, it has been found that the film quality / coverability and the film forming speed can be increased by mixing T ₂ with the discharge-treated O _{2 in the} vicinity of the substrate surface without introducing TMOS into the plasma.

Here, although the details of the principle and operation are not necessarily clear, it is considered that the above-described effects can be obtained because it is difficult to escape to the outside because the source gas TMOS is surrounded by the excited O ₂ gas.

In addition, as a result of further various studies and experiments, the present inventors have mixed in the vicinity of the substrate surface with O ₂ subjected to discharge treatment without introducing TMOS into the plasma in the plasma CVD method under normal pressure. At the same time, it has been found that the film quality / coverability and the film formation rate can be further increased by adding H ₂ O gas subjected to discharge treatment or H ₂ O gas not subjected to discharge treatment.

Although there are many unclear parts regarding the detailed reaction mechanism when H ₂ O is added, OH radicals that are considered to have very strong oxidizing power are generated when H ₂ O meets active oxygen species. Or TMOS (including MTMOS (including methyltrimethoxysilane: CH ₃ Si (OCH ₃ ) ₃ )) has a SiOCH ₃ group that has a very high reactivity with H ₂ O. it is conceivable that.

The present invention pays attention to the above points, and mixes discharge gas treated source gas such as TMOS or MTMOS with a reactive gas such as O ₂ or N ₂ O near the substrate surface and discharge treatment. by adding H 2 _O gas or discharge treatment was not the H _{2 O} gas, thereby realizing an apparatus and method capable of film quality, coverage property that forms a favorable oxide film from both at a high deposition rate.
The specific configuration is shown below.

The oxide film forming apparatus of the present invention is an apparatus for forming an oxide film on the surface of a substrate by a CVD method under a pressure condition near atmospheric pressure, and comprises a source gas (A) and a reactive gas (B) that is an oxidizing gas. , A gas supply source for supplying a three-component process gas called H ₂ O gas (C), and a discharge processing unit, and among the three-component process gases, the reactive gas (B) is discharged in the discharge processing unit. The reaction gas (B) subjected to the discharge treatment is mixed with the source gas (A) and the H ₂ O gas (C) in the vicinity of the substrate surface without being subjected to the discharge treatment. It is attached.

The oxide film forming apparatus of the present invention is an apparatus for forming an oxide film on the surface of a substrate by a CVD method under a pressure condition near atmospheric pressure, and comprises a source gas (A) and a reactive gas (B) that is an oxidizing gas. , A gas supply source for supplying a three-component process gas called H ₂ O gas (C), and a discharge processing unit, and among the three-component process gases, a reactive gas (B) and an H ₂ O gas (C) In each of the individual discharge processing sections, the discharge gas is processed in the vicinity of the substrate surface without subjecting the source gas (A) to the reactive gas (B) and H ₂ O gas (C) subjected to the discharge processing. It is characterized by being configured to mix with.

The oxide film forming apparatus of the present invention is an apparatus for forming an oxide film on the surface of a substrate by a CVD method under a pressure condition near atmospheric pressure, and comprises a source gas (A) and a reactive gas (B) that is an oxidizing gas. , A gas supply source for supplying a three-component process gas called H ₂ O gas (C), and a discharge processing unit, and among the three-component process gases, a reactive gas (B) and an H ₂ O gas (C) Is mixed in the vicinity of the substrate surface without subjecting the raw material gas (A) to the mixed gas subjected to the discharge treatment. It is characterized by that.

The oxide film forming apparatus of the present invention is an apparatus for forming an oxide film on the surface of a substrate by a CVD method under a pressure condition near atmospheric pressure, and comprises a source gas (A) and a reactive gas (B) that is an oxidizing gas. , A gas supply source for supplying a three-component process gas called H ₂ O gas (C), and a discharge processing unit, and among the three-component process gases, the reactive gas (B) is discharged in the discharge processing unit. The mixed gas of the raw material gas (A) and the H ₂ O gas (C) is mixed in the vicinity of the substrate surface without being subjected to the discharge treatment. It is characterized by having.

The oxide film forming method of the present invention is a method of forming an oxide film on the surface of a substrate by a CVD method under a pressure condition near atmospheric pressure, which is a source gas (A), a reactive gas (B) that is an oxidizing gas. , H ₂ O gas (C) is used as a three-component process gas, and among these three-component process gases, the reaction gas (B) is subjected to discharge treatment, and the discharge treatment is performed on the reaction gas (B). It is characterized by mixing raw material gas (A) and H ₂ O gas (C) that are not treated in the vicinity of the substrate surface.

The oxide film forming method of the present invention is a method of forming an oxide film on the surface of a substrate by a CVD method under a pressure condition near atmospheric pressure, which is a source gas (A), a reactive gas (B) that is an oxidizing gas. , H ₂ O gas (C) is used as a three-component process gas, and among these three component process gases, the reaction gas (B) and the H ₂ O gas (C) are separately discharged, It is characterized by mixing the raw material gas (A) not subjected to the discharge treatment with the reaction gas (B) and the H ₂ O gas (C) subjected to the discharge treatment in the vicinity of the substrate surface.

The oxide film forming method of the present invention is a method of forming an oxide film on the surface of a substrate by a CVD method under a pressure condition near atmospheric pressure, which is a source gas (A), a reactive gas (B) that is an oxidizing gas. , A three-component process gas called H ₂ O gas (C) is used, and among these three component process gases, a mixed gas obtained by mixing the reaction gas (B) and the H ₂ O gas (C) is discharged. The mixed gas subjected to the discharge treatment is characterized by mixing the raw material gas (A) not subjected to the discharge treatment in the vicinity of the substrate surface.

The oxide film forming method of the present invention is a method of forming an oxide film on the surface of a substrate by a CVD method under a pressure condition near atmospheric pressure, which is a source gas (A), a reactive gas (B) that is an oxidizing gas. , H ₂ O gas (C) is used as a three-component process gas, and among these three-component process gases, the reaction gas (B) is subjected to discharge treatment, and the discharge treatment is performed on the reaction gas (B). It is characterized by mixing a mixed gas of untreated raw material gas (A) and H ₂ O gas (C) in the vicinity of the substrate surface.

In the oxide film forming apparatus and method of the present invention, a silicon-containing gas such as TMOS or MTMOS can be used as the source gas (A).
Further, as the reaction gas (B), an oxidizing gas such as O ₂ or N ₂ O can be used.

In the oxide film forming apparatus and method of the present invention, among the process gases used in the CVD method, the amount of the reaction gas (B) is 50% by weight or more of the entire process gas, and the source gas (A) and the above-mentioned it is preferred H ₂ O (C) and the weight ratio of [the raw material gas (a) / _{H 2} O gas (C)] is 1/100 to 1 / 0.02.

When O ₂ or N ₂ O in the reaction gas (B) is less than 50% by weight, the film quality is deteriorated. Further, when the weight ratio [material gas (A) / the _{H 2} O gas (C)] is less than 1/100, i.e., even if a large amount of the _{H 2} O gas (C) with respect to the raw material gas (A) The effect of improving the film quality is saturated. On the other hand, when the weight ratio [source gas (A) / H ₂ O gas (C)] is larger than 1 / 0.02, no effect of improving the film quality is observed.

  In the oxide film forming apparatus and method of the present invention, the total supply amount of the three component process gases is preferably 1 to 300 SLM. If the total amount of process gas supplied is less than this range, the film formation rate will be slow. On the other hand, if it exceeds the range, the gas flow is disturbed and uniform film formation cannot be performed.

In the oxide film forming apparatus and method of the present invention, a process gas such as a phosphorus-containing gas such as TMP or TEP or a boron-containing gas (D) such as TMB or TEB may be mixed with the source gas (A). Good.
When a phosphorus-containing gas such as TMP or TEP and a boron-containing gas (D) such as TMB or TEB are mixed, a P-doped silicon oxide film, a B-doped silicon oxide film, a B or P-doped silicon oxide film, or the like can be formed. it can. These oxide films can remarkably reduce stress compared to an undoped silicon oxide film, and thus are extremely effective when forming a thick film. In addition, since it exhibits an ion gettering effect, it is also effective as a protective film.

  In the oxide film forming apparatus of the present invention, it is preferable that a distance between the discharge processing unit and the substrate surface mounted on the substrate mounting unit is 0.5 to 30 mm.

In the oxide film forming apparatus of the present invention, the substrate can be relatively one-way transported or reciprocated by relatively moving the substrate placing portion on which the substrate is placed and the discharge processing portion in one direction or both directions. In addition, a process gas gas jet port that is not subjected to a discharge process is arranged in the middle of the substrate transfer path, and a process gas gas jet is discharged to the front part and the rear part with respect to the substrate transfer direction of the gas jet port. It is good also as a structure which arrange | positions an exit.
Here, the substrate mounting unit may be configured to move, the discharge processing unit may be configured to move, or both may be configured to move.

  And the same process gas may be sufficient as the process gas which carried out the discharge process ejected from the gas ejection port arrange | positioned in the front part and back part with respect to the board | substrate conveyance direction.

  Furthermore, it is preferable to dispose an exhaust port of an exhaust mechanism for exhausting the reacted gas at a front portion and a rear portion with respect to the substrate transport direction of the discharge port of the process gas subjected to the discharge treatment.

  The oxide film forming apparatus and method of the present invention having the above characteristics can be effectively used for forming a silicon-containing insulating film (silicon oxide film) in a semiconductor device.

  Next, the present invention will be described in more detail.

First, under the pressure in the vicinity of the atmospheric pressure referred to in the present invention, 1.333 × 10 ^{4 to} 10.664 ×
Refers to a pressure of 10 ⁴ Pa. Among them, easy pressure adjustment, is preferably in the range of ^{9.331 × 10 4 ~10.397 × 10 4} Pa for device configuration is simplified.

  In the present invention, the substrate on which the oxide film is formed is subjected to the CVD process while being heated. The heating temperature of the substrate is preferably 100 to 500 ° C.

Examples of the discharge treatment unit used in the present invention include a discharge device that generates glow discharge plasma by applying an electric field between a pair of electrodes.
Examples of the material for the electrode that generates plasma include simple metals such as iron, copper, and aluminum, alloys such as stainless steel and brass, and intermetallic compounds. The electrodes preferably have a structure in which the distance between the plasma spaces (between the electrodes) is constant in order to avoid occurrence of arc discharge due to electric field concentration. A parallel plate type counter electrode is more preferable.

  In addition, the electrode for generating plasma (counter electrode) needs to have a solid dielectric disposed on at least one of the opposing surfaces of the pair. At this time, it is preferable that the solid dielectric and the electrode on the side to be installed are in close contact with each other and the opposite surface of the electrode in contact is completely covered. If there is a portion where the electrodes directly face each other without being covered by the solid dielectric, arc discharge is likely to occur therefrom.

  The shape of the solid dielectric may be plate, sheet or film. The thickness of the solid dielectric is preferably 0.01 to 4 mm. If the thickness of the solid dielectric is too thick, a high voltage may be required to generate discharge plasma, and if it is too thin, dielectric breakdown may occur during voltage application and arc discharge may occur. The solid dielectric may be a film coated on the electrode surface by a thermal spraying method.

  Examples of the solid dielectric include plastics such as polytetrafluoroethylene and polyethylene terephthalate, glass, metal dioxide such as silicon dioxide, aluminum oxide, zirconium dioxide, and titanium dioxide, and double oxides such as barium titanate. It is done.

  The solid dielectric preferably has a relative dielectric constant of 2 or more (25 ° C. environment, the same applies hereinafter). Specific examples of the solid dielectric having a relative dielectric constant of 2 or more include polytetrafluoroethylene, glass, and metal oxide film. Further, in order to stably generate a high density discharge plasma, it is preferable to use a solid dielectric having a relative dielectric constant of 10 or more. The upper limit of the relative dielectric constant is not particularly limited, but about 18,500 is known as an actual material. Examples of the solid dielectric having a relative dielectric constant of 10 or more include a metal oxide film mixed with 5 to 50% by weight of titanium oxide and 50 to 95% by weight of aluminum oxide, or a metal oxide containing zirconium oxide. The thing which consists of a material film can be mentioned.

  In the present invention, the distance between the electrodes is appropriately determined in consideration of the thickness of the solid dielectric, the magnitude of the applied voltage, the purpose of using plasma, etc., but is preferably 0.1 to 5 mm. If the distance between the electrodes is less than 0.1 mm, it may not be sufficient to install with a gap between the electrodes, whereas if it exceeds 5 mm, it is difficult to generate a uniform discharge plasma. More preferably, the interval is 0.5 to 3 mm at which discharge is easily stabilized.

  An electric field such as a high frequency, a pulse wave, or a microwave is applied between the electrodes to generate plasma, but it is preferable to apply a pulse electric field, and in particular, an electric field rise and / or fall time is 10 μs or less. Some pulsed electric field is preferred. If it exceeds 10 μs, the discharge state tends to shift to an arc and becomes unstable, and it becomes difficult to maintain a high-density plasma state by a pulse electric field. Also, the shorter the rise time and fall time, the more efficiently ionization of the gas during plasma generation, but it is actually difficult to realize a pulsed electric field with a rise time of less than 40 ns. A more preferable range of the rise time and the fall time is 50 ns to 5 μs. The rise time here refers to the time during which the voltage (absolute value) increases continuously, and the fall time refers to the time during which the voltage (absolute value) decreases continuously.

  The electric field strength of the pulse electric field is 10 to 1000 kV / cm, preferably 20 to 300 kV / cm. When the electric field strength is less than 10 kV / cm, it takes too much time for processing, and when it exceeds 1000 kV / cm, arc discharge tends to occur.

  The frequency of the pulse electric field is preferably 0.5 kHz or more. If it is less than 0.5 kHz, the plasma density is low, and the processing takes too long. The upper limit is not particularly limited, but it may be a high frequency band such as 13.56 MHz that is commonly used and 500 MHz that is used experimentally. In consideration of ease of matching with the load and handling, 500 kHz or less is preferable. By applying such a pulse electric field, the processing speed can be greatly improved.

  Moreover, it is preferable that one pulse duration in the said pulse electric field is 200 microseconds or less, More preferably, it is 3-200 microseconds. If it exceeds 200 μs, it tends to shift to arc discharge. Here, one pulse duration means a continuous ON time of one pulse in a pulse electric field composed of repetition of ON / OFF.

The process gas used in the present invention essentially comprises at least two components of source gas (A) / reaction gas (B). Furthermore, it is more preferable if H ₂ O gas (C) is added to obtain three components.
As the source gas (A), a silicon-containing gas such as TMOS or MTMOS can be used. Further, as the reaction gas (B), it is possible to use O _2, N ₂ oxidizing gas O or the like.

Any of these source gas (A) / reaction gas (B) / H ₂ O gas (C) may be diluted with a diluent gas. In particular, since TMOS, MTMOS, and H ₂ O are liquids at room temperature and normal pressure, it is preferable to introduce a diluent gas as a carrier after vaporization by heating or the like. Examples of the dilution gas include inert gases such as N ₂ , Ar, and He, and rare gases. If the gas generation method is bubbling, it is naturally diluted.

In the present invention, the reaction gas (B) is 50% by weight or more of the entire process gas used for CVD, and the weight ratio of the source gas (A) to the H ₂ O gas (C) (source gas). (A) / H ₂ O gas (C)) is preferably 1/100 to 1 / 0.02.

  In the present invention, the total amount (supply total amount) of process gas (including gas used for CVD; gas for atmosphere adjustment, etc.) including a dilution gas is intended for a substrate of, for example, a 2.3-inch wafer and 1200 mm □. When it does, it is preferable to set it as 1-300 SLM.

Furthermore, phosphorus-containing gas such as TMP (trimethyl phosphate: PO (OCH ₃ ) ₃ ), TEP (triethyl phosphate: PO (OCH ₂ CH ₃ ) ₃ ), or TMB (trimethyl borate: B (OCH ₃ ) ₃ ), TEB (triethyl borate:
A process gas called boron-containing gas (D) such as B (OCH ₂ CH ₃ ) ₃ ) may be mixed with the raw material gas (A).
When a phosphorus-containing gas such as TMP or TEP and a boron-containing gas (D) such as TMB or TEB are mixed, a P-doped silicon oxide film, a B-doped silicon oxide film, a B or P-doped silicon oxide film, or the like can be formed. it can. These oxide films can remarkably reduce stress compared to an undoped silicon oxide film, and thus are extremely effective when forming a thick film. In addition, since it exhibits an ion gettering effect, it is extremely effective as a protective film.

It is a figure which shows typically the structure of embodiment of this invention. It is a figure which shows typically the structure of other embodiment of this invention. It is a figure which shows typically the structure of another embodiment of this invention. It is a figure which shows typically the structure of another embodiment of this invention. It is a figure which shows typically the structure of another embodiment of this invention. It is a figure which shows typically the structure of another embodiment of this invention. It is a figure which shows typically the structure of the discharge process part used for embodiment of this invention. It is a figure which shows typically the structure of the gas introduction part used for embodiment of this invention. It is a figure which shows typically the apparatus structure used for the Example of this invention. It is explanatory drawing of the evaluation method of coverage property.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

<Embodiment 1>
FIG. 1 is a diagram schematically showing a configuration of an embodiment of the present invention.

The oxide film forming apparatus shown in FIG. 1 includes a discharge processing unit 1, two gas introduction units 2, 2, a process gas supply source (TMOS) 3A for supplying three component process gases, a process gas supply source (O ₂ ) 3B, process gas supply source (H ₂ O) 3C, etc.

  Each part of the discharge processing unit 1 and the gas introduction units 2 and 2 is connected in series in the order of the discharge processing unit 1, the gas introduction unit 2, and the gas introduction unit 2 in a state adjacent to each other. The process gas ejected from the outlets 1b and 2b (see FIGS. 7 and 8) is mixed in the vicinity of the surface of the substrate S.

As shown in FIG. 7, the discharge processing unit 1 includes a counter electrode 10 including a voltage application electrode 11 and a ground electrode 12. The counter electrode 10 has a long plate shape extending in a direction perpendicular to the paper surface, and its length is larger than the width of the substrate S transported across.
The voltage application electrode 11 and the ground electrode 12 of the counter electrode 10 are arranged to face each other at a predetermined interval so as to be parallel to each other, and a discharge space D is formed between the voltage application electrode 11 and the ground electrode 12. It is formed.
Each surface of the voltage application electrode 2 and the ground electrode 3 is covered with a solid dielectric (not shown).

A gas introduction port 1a is provided on one end side of the discharge space D in the counter electrode 1, and a gas injection port 1b is provided on the other end side. Between the voltage application electrode 11 and the ground electrode 12 through the gas introduction port 1a. The process gas can be supplied.
Then, by applying an electric field (pulse electric field) from the power source 13 between the voltage application electrode 11 and the ground electrode 12 in a gas supply state, glow discharge plasma (normally) is applied between the voltage application electrode 11 and the ground electrode 12. Pressure plasma) is generated, and the process gas is discharged.
The discharged process gas is ejected toward the substrate S from the gas ejection port 1b. The gas ejection port 1b is formed in a slit shape across the substrate S to be transported, and the length thereof is substantially the same as the length of the counter electrode 10.
In the discharge processing unit 1 shown in FIG. 7, the counter electrode composed of two electrodes is provided. However, the present invention is not limited to this, and the discharge processing unit includes the counter electrode composed of three or more electrodes. May be used.

As shown in FIG. 8, the gas introduction unit 2 includes a pair of opposed flat plates 21 and 22 arranged to be parallel to each other at a predetermined interval, and between the pair of opposed flat plates 21 and 22. A gas passage 20 is formed. An inlet side which is one end side and an outlet side which is the other end side of the gas passage 20 are a gas inlet 2a and a gas outlet 2b, respectively, and the process supplied into the gas passage 20 from the gas inlet 2a. After the gas flow is adjusted in the gas passage 20, the gas is ejected from the gas ejection port 2 b toward the substrate S. Note that the gas introduction unit 2 does not perform a discharge process.
The gas passage 20 is not necessarily defined by the opposed flat plates 21 and 22. It may be defined by a cylinder, or may be defined by inner electrodes of the two discharge processing units 1 and 1 in FIG. If both the inner electrodes are unified with the voltage application electrode 11 or the ground electrode 12, no discharge occurs in the gas introduction part 2. In addition, it is preferable that the inner electrode is a voltage application electrode because it is easy to take measures against electric leakage.

In this embodiment, as shown in FIG. 1, a process gas supply source (O ₂ ) 3B is connected to the gas introduction port 1a of the discharge processing unit 1, and the gas introduction ports 2a of the gas introduction units 2 and 2 are connected. A process gas supply source (TMOS) 3A and a process gas supply source (H ₂ O) 3C are connected to each other, and O ₂ from the process gas supply source 3B is discharged in the discharge processing section 1 and discharged and O ₂ was processed, the process gas supply source 3A, and TMOS passed through each gas inlet 2 is supplied and H _{2 O} (both without discharge treatment) from 3C, by mixing in the vicinity of the surface of the substrate S A silicon oxide film (SiO ₂ ) is formed on the surface of the substrate S.

As described above, according to this embodiment, since the gas subjected to the discharge treatment of O ₂ is mixed with the TMOS and the H ₂ O that are not subjected to the discharge treatment, a silicon oxide film having good film quality and coverage is obtained. It can be formed at a high film formation rate.

<Embodiment 2>
FIG. 2 is a diagram schematically showing the configuration of another embodiment of the present invention.

The oxide film forming apparatus shown in FIG. 2 includes two discharge processing units 1, 1, a gas introduction unit 2, a process gas supply source (TMOS) 3 A for supplying three component process gases, and a process gas supply source (O ₂ ) 3B, process gas supply source (H ₂ O) 3C, etc.

  The discharge processing units 1 and 1 and the gas introduction unit 2 are connected to each other in the order of the discharge processing unit 1, the gas introduction unit 2, and the discharge processing unit 1 in a state adjacent to each other. The process gas ejected from the outlets 1b and 2b (see FIGS. 7 and 8) is mixed in the vicinity of the surface of the substrate S.

  As in the first embodiment, the discharge processing unit 1 and the gas introduction unit 2 have the structures shown in FIGS. 7 and 8.

In this embodiment, a process gas supply source (O ₂ ) 3B and a process gas supply source (H ₂ O) 3C are connected to the gas introduction ports 1a of the discharge treatment units 1 and 1, respectively. The gas inlet 2a is connected to a process gas supply source (TMOS) 3A, and O ₂ and H ₂ O from the process gas supply sources 3B and 3C are discharged by individual discharge processing units 1 and 1, respectively. Then, O ₂ and H ₂ O subjected to the discharge treatment and TMOS (without discharge treatment) supplied from the process gas supply source 3A and passing through the gas introduction unit 2 are mixed in the vicinity of the surface of the substrate S. Thus, a silicon oxide film (SiO ₂ ) is formed on the surface of the substrate S.

As described above, according to this embodiment, O ₂ and H ₂ O are separately subjected to discharge treatment, and the TMOS that has not been subjected to discharge treatment is mixed with the gas subjected to the discharge treatment. A silicon oxide film having good properties can be formed at a high deposition rate.

<Embodiment 3>
FIG. 3 is a diagram schematically showing the configuration of another embodiment of the present invention.

The oxide film forming apparatus shown in FIG. 3 includes a discharge processing unit 1, a gas introduction unit 2, a process gas supply source 3A for supplying a process gas (TMOS), and a mixed gas (O ₂ + H) obtained by mixing two component process gases. _And a mixed gas supply source 3BC for supplying ₂ O).

  The discharge treatment unit 1 and the gas introduction unit 2 are connected in a state adjacent to each other in one direction, and the process gas ejected from the gas ejection ports 1b and 2b (see FIGS. 7 and 8) of each unit is formed on the substrate S. It is designed to mix near the surface.

  As in the first embodiment, the discharge processing unit 1 and the gas introduction unit 2 have the structures shown in FIGS. 7 and 8.

In this embodiment, the mixed gas supply source 3BC is connected to the gas introduction port 1a of the discharge processing unit 1, the process gas supply source 3A is connected to the gas introduction port 2a of the gas introduction unit 2, and the mixed gas The mixed gas (O ₂ + H ₂ O) from the supply source 3BC is subjected to a discharge treatment in the discharge processing unit 1, and the mixed gas (O ₂ + H ₂ O) subjected to the discharge treatment is supplied from the process gas supply source 3A. By mixing TMOS (without discharge treatment) that has passed through the gas introduction part 2 in the vicinity of the surface of the substrate S, a silicon oxide film (SiO ₂ ) is formed on the surface of the substrate S.

Thus, according to this embodiment, since the mixed gas of O ₂ and H ₂ O is subjected to the discharge treatment, and the TMOS not subjected to the discharge treatment is mixed with the mixed gas subjected to the discharge treatment, the film quality -A silicon oxide film with good coverage can be formed at a high deposition rate. Moreover, since only one gas introduction unit is required, the cost can be suppressed.

<Embodiment 4>
FIG. 4 is a diagram schematically showing the configuration of still another embodiment of the present invention.

The oxide film forming apparatus shown in FIG. 4 includes a discharge processing unit 1, a gas introduction unit 2, a process gas supply source 3B for supplying a process gas (O ₂ ), a process gas supply source (TMOS) 3A, and a process gas supply source ( H ₂ O) 3C. Since TMOS and H ₂ O is very high reactivity, the TMOS and H _{2 O} respectively supplied from the process gas supply source 3A and the process gas supply source 3C were mixed immediately before the gas inlet 2, the A mixed gas (TMOS + H ₂ O) is supplied to the gas introduction unit 2.

  The discharge treatment unit 1 and the gas introduction unit 2 are connected in a state adjacent to each other in one direction, and the process gas ejected from the gas ejection ports 1b and 2b (see FIGS. 7 and 8) of each unit is formed on the substrate S. It is designed to mix near the surface.

  As in the first embodiment, the discharge processing unit 1 and the gas introduction unit 2 have the structures shown in FIGS. 7 and 8.

In this embodiment, the process gas supply source 3B is connected to the gas introduction port 1a of the discharge processing unit 1, and the process gas supply source 3A and the process gas supply source 3C are connected to the gas introduction port 2a of the gas introduction unit 2. The O ₂ from the process gas supply source 3B is subjected to a discharge process in the discharge processing section 1, and the O ₂ subjected to the discharge process is supplied from the process gas supply source 3A and the process gas supply source 3C. A silicon oxide film (SiO ₂ ) is formed on the surface of the substrate S by mixing the mixed gas (TMOS + H ₂ O: no discharge treatment) that has passed through the introduction part 2 in the vicinity of the surface of the substrate S.

Thus, according to this embodiment, since the mixed gas (TMOS + H ₂ O) that has not been subjected to the discharge treatment is mixed with the O ₂ that has been subjected to the discharge treatment, both the film quality and the coverage property are improved. The film can be formed at a high deposition rate.

<Embodiment 5>
FIG. 5 is a diagram schematically showing the configuration of still another embodiment of the present invention.

The oxide film forming apparatus shown in FIG. 5 supplies two discharge processing units 1, 1, a gas introduction unit 2, a process gas supply source 3 A that supplies process gas (TMOS), and a mixed gas (O ₂ + H ₂ O). Two mixed gas supply sources 3BC, 3BC and the like are provided.

  The discharge processing units 1 and 1 and the gas introduction unit 2 are connected to each other in the order of the discharge processing unit 1, the gas introduction unit 2, and the discharge processing unit 1 in a state adjacent to each other. The process gas ejected from the outlets 1b and 2b (see FIGS. 7 and 8) is mixed in the vicinity of the surface of the substrate S.

  As in the first embodiment, the discharge processing unit 1 and the gas introduction unit 2 have the structures shown in FIGS. 7 and 8.

In this embodiment, the mixed gas supply sources 3BC and 3BC are connected to the gas introduction ports 1a of the discharge processing units 1 and 1, respectively, and the process gas supply source (TMOS) is connected to the gas introduction port 2a of the gas introduction unit 2. 3A is connected, and the mixed gas (O ₂ + H ₂ O) from the mixed gas supply sources 3BC and 3BC is subjected to discharge processing in the respective discharge processing units 1 and 1, and the mixed gas subjected to the discharge processing. (O ₂ + H ₂ O) and TMOS (without discharge treatment) supplied from the process gas supply source 3A and passed through the gas introduction unit 2 are mixed in the vicinity of the surface of the substrate S, so that silicon is formed on the surface of the substrate S. An oxide film (SiO ₂ ) is formed.

As described above, according to this embodiment, the mixed gas (two systems) of O ₂ and H ₂ O is separately discharged, and the TMOS that has not been discharged is added to the discharged mixed gas. Since they are mixed, a silicon oxide film with good film quality and coverage can be formed at a high deposition rate.

  Here, in each of the above embodiments, the CVD process is performed while transporting the base material S in the left-right direction of each figure (direction perpendicular to the gas passage of the gas introduction unit).

In each of the above embodiments, TMOS is used as the process gas (raw material gas). However, the same effect can be obtained by using MTMOS instead. The same effect can be obtained even if N ₂ O is used instead of O ₂ which is a process gas (reactive gas).

<Embodiment 6>
FIG. 6 is a diagram schematically showing the configuration of still another embodiment of the present invention.

  The oxide film forming apparatus shown in FIG. 6 includes a process gas supply source 3D that supplies a process gas (TMP) in addition to the configuration of the oxide film forming apparatus shown in FIG. The TMOS supplied from the process gas supply source 3A and the TMP supplied from the process gas supply source 3D are mixed before the gas introduction unit 2, and the mixed gas (TMOS + TMP) is supplied to the gas introduction unit 2.

  According to this embodiment, since TMP is mixed with TMOS, a silicon oxide film doped with P can be formed. The P-doped silicon oxide film has good film quality and coverage as well as the undoped silicon oxide film.

In this embodiment, in addition to the configuration of the oxide film forming apparatus shown in FIG. 1, a process gas supply source 3D for supplying TMP is further provided. However, the configuration of the oxide film forming apparatus shown in FIGS. In addition, a process gas supply source 3D for supplying TMP may be provided.
In addition to TMP, TEP, TMB, or TEB may be used as the process gas (D).

  Examples of the present invention will be described below together with comparative examples.

<Example 1>
[Device configuration]
First, the apparatus used in Example 1 is a specific example of the structure shown in FIG. 5. As shown in FIG. 9, the discharge processing unit 1, the gas introduction unit 2, and the discharge processing unit 1 are arranged in this order. It is connected in a state adjacent to each other in the direction. Gas rectifiers 5A and 5C are connected to the two discharge processing units 1 and 1 on the upstream side in the gas flow direction, respectively. In addition, a gas rectifying unit 5B is connected to the central gas introducing unit 2. Further, exhaust mechanisms 6 and 6 are arranged on the sides (left and right in the drawing) of the respective discharge processing units 1 and 1.
Since the substrate platform 7 moves in one direction or both directions, the substrate S placed on the substrate platform 7 is transported one way or reciprocally. The lower ends of the discharge processing units 1 and 1 are arranged so as to be close to the substrate S, and the distance between the discharge processing units 1 and 1 and the substrate surface is set to 0.5 to 30 mm. If the thickness is less than 0.5 mm, there is a possibility that the substrate will be in contact with the discharge processing units 1 and 1 while the substrate is being transported. If the thickness exceeds 30 mm, the atmospheric pressure plasma will dissipate and the film formation efficiency will be greatly reduced. In particular, it is preferably set to 2 to 10 mm.

[Processing conditions]
・ Substrate: Si wafer (8 inch, aluminum wiring formed product), transported in the state where it is set on the substrate mounting portion 7 ・ Substrate temperature: 350 ° C.
Gas flow conditions Processing atmosphere: atmospheric pressure Gas rectifier 5A: O ₂ = 10 SLM, H ₂ O = 0.5 g / min, N ₂ = 2SLM as a carrier gas of H ₂ O
Gas rectifier 5B: TMOS = 0.2 g / min, N ₂ = 10 SLM as TMOS carrier gas
Gas rectifier 5C: O ₂ = 10 SLM, H ₂ O = 0.5 g / min, N ₂ = 2SLM as a carrier gas of H ₂ O
-Discharge conditions: pulse frequency = 10 kHz, applied voltage Vpp = 20 kV
・ Distance between substrate and discharge treatment part = 4mm
-Substrate transport speed: 200 mm / min
When a film was formed on the surface of the substrate S with the above apparatus configuration and conditions, a SiO ₂ film could be obtained at a film formation rate of 1800 Å / min. Moreover, the coverage property and film quality after film-forming processing were evaluated by the following method. The evaluation results (including film formation rate) and processing conditions are shown in Table 1 below.

  In Example 1, it is understood that the coverage property (coverage = 1) is excellent, and the film thickness is also good (withstand voltage = 4.8 MV / cm).

[Evaluation of coverage]
As shown in FIG. 10, the film thickness at the point x (the film thickness of SiO ₂ ) away from the aluminum wiring W and the film thickness at the y point between the two aluminum wirings W and W are measured, respectively. The film thickness ratio ([film thickness at point y] / [film thickness at point x]) is determined and evaluated.

[Evaluation of film quality]
The electric field strength that provides a withstand voltage (1 × 10 ⁻⁷ A / cm ² ) is measured, and the measurement result is evaluated. Electric field strength = 3 MV / cm or more is evaluated as good.

<Comparative Example 1>
As shown in Table 1 below, when the SiO ₂ film was formed on the surface of the substrate S as in Example 1 except that H ₂ O was not added, the film formation rate was approximately the same at 1900 Å / min. Met. Further, the coverage and film quality after the film formation process were evaluated by the same method as in Example 1. The evaluation results (including the film formation rate) are shown in Table 1 below.

In Comparative Example 1, the coverage property (coverage = 1) was good and the film formation rate was substantially the same as that in Example 1 (H ₂ O addition), but the breakdown voltage was low (2.1 MV / cm). ).
However, when a SiO ₂ film was formed on the surface of the substrate S under the same processing conditions as in Example 1 by the TEOS / O ₃ atmospheric pressure thermal CVD method, the film formation rate was 1000 Å / min, and the withstand voltage was 1.7 MV / cm.
Therefore, it was found that in both Example 1 and Comparative Example 1, both the film quality and the film forming speed were remarkably improved as compared with the TEOS / O ₃ system atmospheric pressure CVD method.

<Example 2>
As shown in Table 1 below, film formation was performed on the surface of the substrate S as in Example 1, except that the amount of H ₂ O added was reduced to 0.05 g / min. As a result, a SiO ₂ film could be obtained at a deposition rate of 1800 Å / min. Further, the coverage and film quality after the film formation process were evaluated by the same method as in Example 1. The evaluation results (including the film formation rate) are shown in Table 1 below.

From the results of Example 2, even when the H ₂ O addition amount is reduced to 0.05 g / min, the effect is exhibited in both the film formation rate (1800 Å / min) and the withstand voltage (4 MV / cm). I understand.

<Example 3>
As shown in Table 1 below, Example 1 is the same as Example 1 except that the amount of TMOS was reduced to 0.1 g / min and the amount of H ₂ O added was increased to 1.5 g / min. When a film was formed on the surface of the substrate S in the same manner as in Example 1, a SiO ₂ film could be obtained at a film formation rate of 1400 Å / min. Further, the coverage and film quality after the film formation process were evaluated by the same method as in Example 1. The evaluation results (including the film formation rate) are shown in Table 1 below.

From the results of Example 3, it can be seen that when the amount of H ₂ O added to the TMOS is increased, a good film formation rate (1400 Å / min) can be obtained even if the amount of TMOS, which is the reduced amount, is reduced to 1/2. . Moreover, it turns out that a pressure | voltage resistance is also favorable (5.5MV / cm). In addition, when the film-forming process was performed with the amount of H ₂ O added larger than that in Example 3, the performance was slightly improved.

<Example 4>
As shown in Table 1 below, the amount of TMOS was increased to 1.5 g / min with respect to Example 1, and the addition amount of H ₂ O was further increased to 1.0 g / min. Except that the conveyance speed was doubled to 400 mm / min, film formation was performed on the surface of the substrate S as in Example 1, and an SiO ₂ film was obtained at a very high film formation speed of 4800 mm / min. I was able to. Further, the coverage and film quality after the film formation process were evaluated by the same method as in Example 1. The evaluation results (including the film formation rate) are shown in Table 1 below.

From the results of Example 4, it can be seen that by increasing both the amount of TMOS as a raw material and the amount of H ₂ O added, the film forming process can be performed at high speed. Although the withstand voltage is lower than that in Example 1, a favorable value (3.5 MV / cm) can be secured as compared with the case without H ₂ O addition (Comparative Example 1).

<Example 5>
As shown in Table 1 below, when the film was formed on the surface of the substrate S as in Example 1 except that the raw material was changed to MTMOS, the SiO ₂ film was formed at a film formation rate of 1700 Å / min. I was able to get it. Further, the coverage and film quality after the film formation process were evaluated by the same method as in Example 1. The evaluation results (including the film formation rate) are shown in Table 1 below.

  From the results of Example 5, it can be seen that even if MTMOS is used instead of TMOS, substantially the same performance (deposition rate, film quality, and coverage) can be secured.

<Example 6>
As shown in Table 1 below, the O ₂ was changed to N ₂ O, as the same as in Example 1, was subjected to film formation on the surface of the substrate S, at a deposition rate of 1600 Å / min An SiO ₂ film could be obtained. Further, the coverage and film quality after the film formation process were evaluated by the same method as in Example 1. The evaluation results (including the film formation rate) are shown in Table 1 below.

From the results of Example 6, it can be seen that even if N ₂ O is used instead of O ₂ , almost the same performance (film formation speed, film quality, and coverage) can be secured.

<Comparative example 2>
As shown in Table 2 below, with respect to Example 1, each O ₂ amount of the gas rectifying unit 5A and the gas rectifying unit 5C is reduced to ₂ SLM, and each N _{2 of the} gas rectifying unit 5A and the gas rectifying unit 5C is reduced. When a SiO ₂ film was formed on the surface of the substrate S as in Example 1 except that the amount (carrier gas amount) was increased to 10 SLM, the film formation rate decreased to 900 Å / min. Further, the coverage and film quality after the film formation process were evaluated by the same method as in Example 1. The evaluation results (including the film formation rate) are shown in Table 2 below.

  In Comparative Example 2, the coverage property (coverage = 1) is good, but the deposition rate is slower than that of Example 1, and the breakdown voltage is low (2.4 MV / cm).

<Example 7>
A film was formed on the surface of the substrate S as in Example 1 except that the gas flow adjustment of the gas rectifying units 5A to 5C in FIG. An SiO ₂ film could be obtained. Further, the coverage and film quality after the film formation process were evaluated by the same method as in Example 1. The evaluation results (including the film formation rate) are shown in Table 2 below.

Gas rectifiers 5A and 5C: O ₂ = 10 SLM
Gas rectification unit 5B: TMOS = 0.2 g / min, N ₂ = 10 SLM as carrier gas of TMOS, H ₂ O = 1.0 g / min
The results of this Example 7, even without discharge treatment H 2 _O, H _{2 O} was added to the TMOS, by increasing the amount of O _2, Example 1 and substantially the same performance (deposition rate, It can be seen that film quality and coverage can be secured.

<Example 8>
On the surface of the base material S on which an aluminum wiring pattern having an opening with a width of 150 nm and a depth of 400 nm was formed, except that the substrate temperature and the distance between the base material and the discharge treatment part were the following conditions. When the film was formed, an SiO ₂ film was obtained at a film formation rate of 1500 Å / min. Also, the opening could be embedded almost completely.

-Substrate temperature: 300 ° C
・ Distance between base material and discharge treatment part = 3mm
From the results of Example 8, it can be seen that according to the oxide film forming method of the present invention, an oxide film having a sufficient film thickness can be formed even in an extremely narrow opening.

As described above, according to the present invention, a source gas composed of a silicon-containing gas such as TMOS or MTMOS and a reactive gas composed of an oxidizing gas such as O ₂ or N ₂ O that has been subjected to discharge treatment are provided in the vicinity of the substrate surface. Therefore, even in the CVD method under normal pressure, an oxide film having good film quality and coverage can be formed at a high film formation rate.

Furthermore, H ₂ O that has been subjected to discharge treatment or not subjected to discharge treatment is added to a source gas composed of a silicon-containing gas such as TMOS or MTMOS and a reaction gas composed of an oxidizing gas such as O ₂ or N ₂ O that has been subjected to discharge treatment. For example, in the CVD method under normal pressure, an oxide film with better film quality and coverage can be formed at a high deposition rate.

In the present invention, if TMOS or MTMOS is used as a raw material, gas handling is easier than silane gas, and further, TMOS and MTMOS have a lower boiling point than TEOS, which is generally widely used, and vaporization is easy. There is an advantage. In addition, handling of H ₂ O as an additive is easy. Further, since there is no need to put the substrate in an electric field, there is an advantage that the film forming process can be performed without damaging the substrate.

DESCRIPTION OF SYMBOLS 1 Discharge process part 1a Gas inlet 1b Gas jet 10 Counter electrode 11 Voltage application electrode 12 Ground electrode 13 Power supply 2 Gas inlet 2a Gas inlet 2b Gas jet 20 Gas passage 21, 21 Opposite flat plate 3A Process gas supply source (TMOS)
3B Process gas supply source (O ₂ )
3C Process gas supply source (H ₂ O)
3BC mixed gas supply source (O ₂ + H ₂ O)
3AB Mixed gas supply source (TMOS + O ₂ )
5A, 5B, 5C Gas rectification unit 6 Exhaust mechanism 7 Substrate placement unit

Claims (12)

An apparatus for forming an oxide film on the surface of a substrate by a CVD method under a pressure condition near atmospheric pressure, which is referred to as a source gas (A), a reactive gas (B) that is an oxidizing gas, and an H ₂ O gas (C). A gas supply source for supplying a three-component process gas and a discharge processing unit are provided. Among the three-component process gases, the reaction gas (B) is subjected to a discharge process in the discharge processing unit, and the discharge process is performed. An oxide film forming apparatus, wherein the source gas (A) and the H ₂ O gas (C) are mixed with the reaction gas (B) in the vicinity of the substrate surface without discharge treatment. An apparatus for forming an oxide film on the surface of a substrate by a CVD method under a pressure condition near atmospheric pressure, which is referred to as a source gas (A), a reactive gas (B) that is an oxidizing gas, and an H ₂ O gas (C). A gas supply source for supplying a three-component process gas and a discharge processing unit are provided, and among the three-component process gases, the reaction gas (B) and the H ₂ O gas (C) are individually discharged. A discharge treatment is performed at the part, and the source gas (A) is mixed in the vicinity of the substrate surface without discharge treatment to the reaction gas (B) and H ₂ O gas (C) subjected to the discharge treatment. An oxide film forming apparatus characterized in that: An apparatus for forming an oxide film on the surface of a substrate by a CVD method under a pressure condition near atmospheric pressure, which is referred to as a source gas (A), a reactive gas (B) that is an oxidizing gas, and an H ₂ O gas (C). A gas supply source that supplies a three-component process gas and a discharge processing unit, and a mixed gas in which the reaction gas (B) and the H ₂ O gas (C) are mixed among the three-component process gases. Oxidation characterized in that discharge treatment is performed in a discharge treatment section, and the raw material gas (A) is mixed in the vicinity of the substrate surface without discharge treatment to the mixed gas subjected to the discharge treatment. Film forming device. An apparatus for forming an oxide film on the surface of a substrate by a CVD method under a pressure condition near atmospheric pressure, which is referred to as a source gas (A), a reactive gas (B) that is an oxidizing gas, and an H ₂ O gas (C). A gas supply source for supplying a three-component process gas and a discharge processing unit are provided. Among the three-component process gases, the reaction gas (B) is subjected to a discharge process in the discharge processing unit, and the discharge process is performed The reaction gas (B) is configured to mix the mixed gas of the source gas (A) and the H ₂ O gas (C) in the vicinity of the substrate surface without performing a discharge treatment. Oxide film forming device. Of the process gas used in the CVD method, the amount of the reaction gas (B) is 50% by weight or more of the entire process gas, and the source gas (A) and the H ₂ O gas (C) 5. The oxide film forming apparatus according to claim 1, wherein the weight ratio [source gas (A) / H ₂ O gas (C)] is 1/100 to 1 / 0.02.   By moving the substrate mounting portion on which the substrate is placed and the discharge processing portion relatively in one direction or both directions, the substrate can be transported relatively one-way or reciprocally, and the substrate transport path A gas gas outlet for the process gas not subjected to the discharge treatment is disposed in the middle, and a gas gas outlet for the process gas subjected to the discharge treatment is disposed in the front part and the rear part with respect to the substrate transport direction of the gas outlet. The oxide film forming apparatus according to claim 1.   The oxide film formation according to claim 6, wherein the discharge-treated process gas ejected from a gas ejection port disposed at a front portion and a rear portion with respect to the substrate transport direction is the same process gas. apparatus.   The exhaust port of the exhaust mechanism which discharges | emits the gas after reaction is further arrange | positioned in the front part and back part with respect to the board | substrate conveyance direction of the gas jet nozzle of the said discharge process gas. The oxide film forming apparatus according to any one of the above. A method of forming an oxide film on the surface of a substrate by a CVD method under a pressure condition near atmospheric pressure, which is referred to as a source gas (A), a reactive gas (B) that is an oxidizing gas, and an H ₂ O gas (C). Using the three-component process gas, among the three-component process gases, the reaction gas (B) is subjected to discharge treatment, and the discharge-treated reaction gas (B) is not subjected to discharge treatment. (a) and the oxide film forming method characterized in that the H _{2 O} gas and (C) are mixed in the vicinity of the substrate surface. A method of forming an oxide film on the surface of a substrate by a CVD method under a pressure condition near atmospheric pressure, which is referred to as a source gas (A), a reactive gas (B) that is an oxidizing gas, and an H ₂ O gas (C). Using a three-component process gas, among the three-component process gases, the reaction gas (B) and the H ₂ O gas (C) are separately subjected to discharge treatment, and the reaction gas ( B) and H ₂ O gas (C) are mixed with the raw material gas (A) not subjected to discharge treatment in the vicinity of the substrate surface. A method of forming an oxide film on the surface of a substrate by a CVD method under a pressure condition near atmospheric pressure, which is referred to as a source gas (A), a reactive gas (B) that is an oxidizing gas, and an H ₂ O gas (C). 3 using the components of the process gas, of those three components of the process gas, and discharge treatment the reaction gas (B) and the the H _{2 O} gas (C) and the mixture was mixed gas was the discharge treatment mixture A method of forming an oxide film, comprising mixing the raw material gas (A) not subjected to a discharge treatment in the vicinity of a substrate surface with a gas. A method of forming an oxide film on the surface of a substrate by a CVD method under a pressure condition near atmospheric pressure, which is referred to as a source gas (A), a reactive gas (B) that is an oxidizing gas, and an H ₂ O gas (C). Using the three-component process gas, among the three-component process gases, the reaction gas (B) is subjected to discharge treatment, and the discharge-treated reaction gas (B) is not subjected to discharge treatment. A method of forming an oxide film, comprising mixing a mixed gas of (A) and the H ₂ O gas (C) in the vicinity of a substrate surface.

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