JP2006318762A - Plasma process device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma process device capable of efficiently using active species produced in plasma without damaging a processing object. <P>SOLUTION: This plasma process device 100 is provided with: a pair of a first electrode 106 and a second electrode 107 housed in a reaction vessel 101 and arranged above a substrate 109 by being separated at a predetermined distance; and a dielectric material 110 infilling a specified space between the first and second electrodes. The first electrode 106 partially generates plasma P on a surface of the dielectric material 110 positioned between the second electrode 107 and itself when high-frequency power is applied thereto; a gas introduction port 102 supplies a gas so as to direct it from the outside of an area for generating the plasma P toward the surface of the substrate 109; and active species generated in the plasma P are guided to the surface of the substrate 109 along with the flow of the supplied gas. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a plasma processing apparatus, and more specifically, plasma is generated under a pressure at or near atmospheric pressure, and plasma processing such as thin film formation / processing and surface treatment using a chemical reaction of plasma. The present invention relates to a plasma processing apparatus that performs the above.

In the manufacture of various electronic devices such as semiconductors, flat panel displays, and solar cells, plasma process apparatuses that perform various processing processes such as etching, thin film formation, and ashing by plasma processing are used.
Among these devices, devices such as flat panel displays and thin-film solar cells using thin-film amorphous silicon have been increased in size to be processed to a size of 2 m or more in order to increase the size of the device and reduce manufacturing costs. Along with this, the size of the plasma processing apparatus is also increasing.

Conventionally, the plasma processing apparatus as described above normally uses plasma under reduced pressure. A plasma processing apparatus that performs plasma processing under a reduced pressure requires a large vacuum evacuation facility corresponding to an increase in the size of a substrate, which increases the manufacturing cost of the plasma processing apparatus.
For this reason, in recent years, various atmospheric pressure plasma process apparatuses that perform plasma processing under atmospheric pressure or a pressure in the vicinity thereof have been proposed and put into practical use.

An atmospheric pressure plasma process apparatus that performs plasma processing under atmospheric pressure or a pressure near it (1) The apparatus size can be reduced without the need for a vacuum vessel, and (2) processing is possible because the density of active species of plasma is high. There is an advantage that the speed can be increased, and (3) depending on the apparatus configuration, the processing time per substrate to be processed can be made substantially equal to the plasma processing time.
However, when plasma treatment is performed under a pressure near atmospheric pressure, minute spark discharge or streamer discharge often occurs along the electric field direction.

The atmospheric pressure plasma process apparatus as described above is roughly classified into three categories according to the apparatus configuration.
The first is a mode in which a process is performed by inserting a substrate between electrodes where plasma is generated.
Such a configuration is generally called a direct method. For example, a plasma is generated between counter electrodes, and a substrate is placed between the counter electrodes to perform plasma processing (for example, Patent Documents). 1).

In the direct method, in order to maintain a stable glow discharge between the counter electrodes, the gap in the gap between the electrodes is usually limited to several mm.
Since a substrate having a thickness of about 0.5 to 2 mm is inserted between the narrow gaps of several millimeters, the substrate is arranged substantially parallel to the electrode facing surface, and the electric field formed between the electrodes is the substrate. The surface is substantially perpendicular to the surface to be processed.
For this reason, when the minute spark discharge or streamer discharge along the electric field direction occurs, the surface to be processed of the substrate may be directly damaged.
In addition, even when no spark discharge or streamer discharge as described above occurs, the surface of the substrate to be processed is directly exposed to plasma, so that the substrate temperature rises when the input power density increases, and the substrate or the surface of the substrate to be processed There are cases where the film formed thereon is damaged, or damage is caused by the charged particles being captured by the electric field and colliding with the substrate.

The second is a form in which the region where plasma is generated is separated from the surface to be processed of the substrate.
In general, such a configuration is called a remote system. For example, plasma is generated in a gas flow path between electrodes, and active species generated in the plasma are diffused, or a substrate is processed by a gas flow or the like. One that performs plasma treatment by reaching the surface is known (see, for example, Patent Document 2).

In such a remote method, since the region for generating plasma is separated from the surface to be processed of the substrate, the charged particles are trapped in the plasma generation region, and the probability of reaching the surface to be processed of the substrate becomes extremely low.
For this reason, damage caused by the charged particles being accelerated by the electric field and colliding with the surface to be processed of the substrate hardly occurs.
Further, even if a minute spark discharge or streamer discharge occurs in the plasma generation region, there is no direct damage to the surface to be processed of the substrate that occurs in the direct method.

On the other hand, since the surface to be processed of the substrate is away from the plasma generation region, there is a high probability that the active species will be deactivated to a state of poor reactivity before reaching the surface to be processed of the substrate. slow.
In particular, under a pressure near atmospheric pressure, the active species frequently collide with surrounding gas molecules, and the active species are quickly deactivated. And because of the slow processing speed, there is a problem that the remote method can be applied only to very slight processing.
Therefore, there is a demand for a method that enables higher-speed processing for the remote method.

  In contrast to the above two types of methods, (1) the direction of the electric field formed for generating plasma is set on the surface to be processed so that the substrate is not damaged even if spark discharge or streamer discharge occurs. (2) The third developed as a result is required to bring the plasma and the target surface of the substrate as close as possible to or in contact with each other so that high-speed processing is possible. As a method, a method is known in which a gap between a pair of electrodes arranged close to each other in the left-right direction is filled with an insulator to prevent discharge in the gap and generate plasma on the lower surface of the insulator. (For example, refer to Patent Document 3).

FIG. 7 shows an apparatus configuration of such a system, which is an intermediate apparatus configuration between the direct system and the remote system.
As shown in FIG. 7, the gap between the inner electrode 601 and the outer electrode 602 is filled with an insulator 603 to inhibit discharge, and plasma P is generated below the insulator 603.
The reactive gas is supplied from a location away from the space where the plasma P is generated via the reactive gas supply path 604, flows along the space formed between the workpiece 606 and the electrode, and then the center of the inner electrode 601. The reaction product is exhausted from a reaction product exhaust path 605 provided so as to pass through.
For this reason, the gas flow in the vicinity of the plasma P is in a direction substantially parallel to the workpiece 606.
JP-A-10-88372 Japanese Patent No. 3147137 JP 2001-44180 A

In the plasma process apparatus described in Patent Document 3, as described above, the active species generated in the plasma move along the gas flow and substantially parallel to the surface of the object to be processed.
However, since no movement component in the direction perpendicular to the surface of the workpiece is given, active species generated in the vicinity of the surface of the workpiece among the active species generated in the plasma contribute to the plasma treatment. However, active species generated near the surface of the insulator away from the surface of the object to be processed tend not to contribute to the plasma processing.
For this reason, the plasma processing speed is not significantly improved as compared with the above-described remote method, and further increase in the processing speed is demanded.

  The present invention has been made in consideration of the above-described circumstances, and provides a plasma process apparatus that can efficiently use active species generated in plasma and that does not damage an object to be processed. is there.

  The present invention includes a normal pressure reaction vessel covering at least a part of an object to be processed, a gas supply means for supplying gas into the reaction vessel, a gas discharge means for discharging gas from the reaction vessel, and a reaction vessel. A pair of first and second electrodes that are accommodated and disposed at a predetermined interval above the object to be processed, and a dielectric that fills a space defined between the first and second electrodes, One electrode generates plasma partially on the surface of the dielectric located between the second electrode when high-frequency power is applied, and the gas supply means supplies the surface of the object to be processed from outside the region where the plasma is generated. A plasma processing apparatus is provided in which a gas is supplied so as to be directed toward the surface of an object to be processed on the flow of the supplied active species generated in the plasma.

According to the present invention, the gas supply means supplies the gas from the outside of the region where the plasma is generated toward the surface of the object to be processed, so that the active species generated in the plasma are in the flow of the supplied gas. To the surface of the workpiece.
For this reason, it becomes easy for the active species generated in the plasma to reach the surface of the object to be processed, and the use of the active species efficiently increases the processing speed.
In addition, since plasma is generated on the surface of the dielectric positioned between the pair of first and second electrodes disposed above the object to be processed, the electric field direction is not the direction toward the object to be processed. Even if a minute spark discharge or streamer discharge occurs along the direction, it is possible to prevent the surface of the object to be directly damaged.
Furthermore, since the charged particles are captured in the plasma generation region and hardly reach the surface of the object to be processed, damage caused by the charged particles being accelerated by the electric field and colliding with the surface of the object to be processed can be prevented.
Due to these effects, it is possible to provide a plasma process apparatus that can efficiently use active species generated in plasma and that does not damage the object to be processed, and of course suitable for relatively large objects to be processed. Will be available to you.

  A plasma process apparatus according to the present invention includes a normal pressure reaction vessel covering at least a part of an object to be processed, a gas supply means for supplying gas into the reaction vessel, a gas discharge means for discharging gas from the reaction vessel, A pair of first and second electrodes housed in the reaction vessel and disposed above the object to be processed at a predetermined interval; and a dielectric filling a space defined between the first and second electrodes; The first electrode partially generates plasma on the surface of the dielectric positioned between the second electrode and the second electrode when high-frequency power is applied, and the gas supply means is covered from outside the region where the plasma is generated. A gas is supplied toward the surface of the object to be processed, and the active species generated in the plasma are guided to the surface of the object to be processed in the flow of the supplied gas.

  In the plasma processing apparatus according to the present invention, the normal pressure means atmospheric pressure or a pressure in the vicinity of atmospheric pressure. The reaction vessel is not particularly limited as long as it can perform plasma treatment on the object to be treated under atmospheric pressure or a pressure in the vicinity of atmospheric pressure, and its configuration is not particularly limited. Specific examples include, for example, aluminum and stainless steel. The metal container made can be mentioned.

The pair of first and second electrodes only need to be formed of a conductor, and the configuration thereof is not particularly limited. Specific examples thereof include those formed of aluminum, copper, or brass. Can do.
Note that the surface of the first electrode and the second electrode facing the object to be processed is alumite-treated or alumina so that the surface is not affected by process gas, active species generated in plasma, products after reaction, and the like. A surface treatment such as thermal spraying may be performed, or it may be covered with a bulk dielectric.

  The dielectric filling the space between the first and second electrodes may be formed of an insulating material having excellent heat resistance, voltage resistance, plasma resistance, and gas resistance, and the material is not particularly limited. Specific examples include high purity alumina, aluminum nitride, or silicon nitride. In particular, when the input power density is high, it is preferable to suppress an increase in temperature of a portion exposed to plasma by using aluminum nitride or alumina having high thermal conductivity.

  Any gas supply means may be used as long as it can supply a desired gas at a predetermined flow rate, and the configuration thereof is not particularly limited. Specific examples include, for example, a gas cylinder containing the desired gas, and a gas cylinder to the reaction chamber. Examples include a gas supply path that communicates with a flow rate controller provided in the gas supply path.

  The gas exhaust means is not particularly limited as long as it can exhaust the gas in the reaction vessel, and specific examples include, for example, an exhaust pump and an exhaust gas connected to the exhaust pump and leading to the reaction vessel. The thing comprised from a path | route can be mentioned.

The gas supplied into the reaction vessel by the gas supply means is not particularly limited as long as the gas type and mixing ratio are changed depending on the purpose of the plasma treatment. For example, a rare gas such as He or Ar, or a fluorine compound A gas containing a halogen such as a chlorine compound and a reaction gas such as oxygen or nitrogen can be appropriately selected according to the purpose of treatment.
For example, He and Ar can be used mainly for excitation of active species during plasma generation, fluorine compounds, chlorine compounds, and oxygen for etching, and oxygen for ashing. Further, for example, SiH4, nitrogen, or other process gas corresponding to each film can be used to form a film such as SiN.

In the plasma processing apparatus according to the present invention, each of the first and second electrodes has a flat lower end surface facing the object to be processed, and the first and second electrodes have predetermined lower end surfaces with respect to the object to be processed. The dielectric is provided so as to cover the lower end surfaces of the first and second electrodes, and the first and second electrodes are partially formed from the first electrode to the second electrode. You may have the inclined surface which inclines with respect to the lower end surface.
According to such a configuration, the gas supplied from the gas supply means can flow along the inclined surface of the dielectric, and the active species generated in the plasma can easily reach the surface of the object to be processed. It is possible to create an ideal gas flow in order to efficiently use active species and increase the processing speed.
Moreover, since the lower end surfaces of the first and second electrodes are covered with a dielectric, undesirable arc discharge is prevented from occurring, and damage to the object to be processed is prevented.

In the plasma processing apparatus according to the present invention, the first and second electrodes each have a flat lower end surface facing the object to be processed, and the first and second electrodes have their lower end surfaces facing the object to be processed. The dielectrics may be provided so as to cover the lower end surfaces of the first and second electrodes.
According to such a configuration, the distance between the region where the plasma is generated and the object to be processed can be made closer than in the configuration in which the inclined surface is formed on the dielectric, and the plasma processing speed can be further improved. Can be planned.

In the above-described configuration in which the lower end surface of the first electrode is covered with a dielectric, the gas supply means may have a gas supply path formed so as to penetrate the first electrode and the dielectric.
According to such a configuration, gas can be supplied from the vicinity of a region where plasma is generated, and active species are efficiently generated.

Further, in the above-described configuration in which the gas supply means has a gas supply path that penetrates the first electrode and the dielectric, the gas supply path has a gas outlet that is exposed to the object to be processed at one end thereof, and the gas outlet is At least a part of the gas supply path that is included may be bent so as to form a predetermined angle with respect to the lower end surface of the first electrode.
According to such a configuration, since the gas is blown out at a predetermined angle with respect to the lower end surface of the first electrode, it is generated in the plasma regardless of whether the inclined surface is formed on the dielectric. It is possible to reliably generate an ideal gas flow when the active species can easily reach the surface of the object to be processed and the active species are efficiently used to increase the processing speed.

Further, in the plasma processing apparatus according to the present invention, the dielectric may have a concave portion that is partially recessed in a part thereof.
According to such a configuration, the discharge start voltage can be lowered, and the temperature rise of the dielectric and the object to be processed can be suppressed.

  Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.

Example 1
A plasma processing apparatus according to Embodiment 1 of the present invention will be described with reference to FIGS.
1 is a cross-sectional view showing a schematic configuration of a plasma processing apparatus according to a first embodiment, and FIG. 2 is a bottom view of an electrode portion of the plasma processing apparatus shown in FIG. 1 and 2, the X-axis direction indicates the longitudinal direction of the electrode, the Y-axis direction indicates the width direction of the electrode, and the Z-axis direction indicates the height direction of the electrode.

  As shown in FIGS. 1 and 2, the plasma processing apparatus 100 according to the first embodiment generally includes a normal pressure reaction vessel 101 covering at least a part of a substrate (object to be processed) 109, and a gas in the reaction vessel 101. Gas inlet 102 and gas supply path 116 (gas supply means) for supplying gas, gas exhaust ports (gas discharge means) 103a and 103b for discharging gas from the reaction vessel 101, and a substrate 109 accommodated in the reaction vessel 101. And a dielectric 110 that fills a defined space with a predetermined gap above the electrode, and a high-frequency application electrode (first electrode) 106 is connected to a ground electrode 107 (second electrode) when high-frequency power is applied from a high-frequency power source 104. The plasma P is partially generated on the surface of the dielectric 110 located between the electrode 109 and the gas inlet 102 from the outside of the region where the plasma P is generated. The active species generated in the plasma P by supplying a gas to be directed to put the flow of the supplied gas is configured to direct the surface of the substrate 109.

Hereinafter, it demonstrates in detail based on FIG. 1 and FIG.
As shown in FIGS. 1 and 2, the plasma processing apparatus 100 according to the first embodiment includes a reaction vessel 101 made of metal made of aluminum or SUS and a high-frequency power source 104 having a frequency of 13.56 MHz via a matching unit 105. The high-frequency applying electrode 106 to which high-frequency power is supplied, the grounding electrode 107 adjacent to the high-frequency applying electrode 106 with a minimum spacing of about 3 to 6 mm, and the gap between the high-frequency applying electrode 106 and the grounding electrode 107 are filled. A dielectric 110 made of alumina, a roller transport unit 112 for introducing the substrate 109 introduced into the reaction vessel 101 into the vicinity of the plasma P generation region and carrying it out of the reaction vessel 101; A gas inlet 102 for introducing gas into the inside of the high-frequency applying electrode 106 from the gas supply facility, and a gas inlet 10 A gas jet port 113 for blowing the gas introduced from the gas toward the surface of the substrate 109 via the gas supply path 116, and gas exhaust ports 103a for exhausting excess gas after the plasma treatment to the outside of the reaction vessel 101, 103b, and a cooling water channel 111 provided inside the high-frequency applying electrode 106 and the ground electrode 107.

  The dimensions of the reaction vessel 101 are, for example, a length in the X-axis direction of 2200 mm, a width in the Y-axis direction of 300 mm, and a height in the Z-axis direction of 200 mm. The dimensions of the high frequency application electrode 106 are, for example, a length in the X-axis direction of 2000 mm, a width in the Y-axis direction of 80 mm, and a height in the Z-axis direction of 100 mm.

The high-frequency application electrode 106 is disposed such that the lower end surface thereof is higher by about 1 to 5 mm in the Z-axis direction than the lower end surface of the ground electrode 107. As a result, even when high power is applied to the high-frequency application electrode 106, an undesirable discharge toward the surface of the substrate 109 does not occur, and the discharge with the ground electrode 107 is ensured.
In order to prevent undesired arc discharge, the dielectric 110 is provided so as to cover the entire area of the lower end surface of the high-frequency applying electrode 106 and the substantially entire area of the lower end surface of the ground electrode 107. 110 and the high-frequency applying electrode 106.
In the dielectric 110, a portion extending from the high-frequency applying electrode 106 to the ground electrode 107 is formed with an inclined surface 117 that spreads toward the substrate 109 in order to direct the gas blown from the gas ejection port 113 toward the surface of the substrate. Has been.
In order to lower the discharge start voltage for generating the plasma P, a slender groove-like recess 115 extending in the X-axis direction is formed on a part of the inclined surface 117 of the dielectric 110.

  Hereinafter, the case where the plasma process apparatus 100 according to the first embodiment having such a configuration is applied as an ashing apparatus used at atmospheric pressure or a pressure in the vicinity thereof and a resist or the like is peeled will be briefly described.

Cooling water previously maintained at a constant temperature is allowed to flow through the cooling water passage 111 provided in the high-frequency applying electrode 106 and the ground electrode 107.
Then, from a gas supply facility (not shown) such as a gas cylinder provided outside, a rare gas such as He is introduced into the plasma process apparatus 100 from the gas inlet 102 at a flow rate of 100 SLM for a certain period of time. The atmosphere is replaced from air to He.
At this time, since there is no substrate 109 inside the reaction vessel 101, the atmosphere in the vicinity of the roller transport unit 112 is also replaced with He from the air.

When the inside of the container 101 is replaced with He, for example, a process gas having a ratio of ₂ SLM for O _{2 and} 100 SLM for He is introduced from the gas inlet 102, and the internal pressure is set to atmospheric pressure or a constant pressure in the vicinity thereof. keep.
About 10 kW of power is supplied from the high frequency power supply 104 having a frequency of 13.56 MHz, and plasma P is generated in the recess 115 formed on the inclined surface 117 of the dielectric 110.

  The substrate 109 is conveyed by the roller conveying unit 112 by adjusting the gap G between the bottom surface of the dielectric 110 and the surface of the substrate 109 to be about 2 to 5 mm, and the resist on the substrate 109 is ashed and peeled off.

As the substrate 109, an electrode pattern is formed on a glass substrate having a length in the X-axis direction of 2000 mm, a width in the Y-axis direction of 1600 mm, and a thickness of 0.7 mm, and the resist used at the time of formation on the electrode pattern is used. The remaining one was used.
In the plasma processing apparatus of the first embodiment, the process gas introduced from the gas introduction port 102 passes through the gas diffusion plate 114 and the gas supply path 116 disposed inside the high-frequency application electrode 106, and a plurality of the process gases shown in FIG. The gas jets 113 are blown out almost uniformly toward the surface of the substrate 109.

As shown in FIG. 1, the gas outlet 113 is located away from the recess 115 of the dielectric 110 where the plasma P is generated, and the process gas blown out from the gas outlet 113 is an inclined surface of the dielectric 110. The active species that flow along 117 and are generated in the plasma P generation region are guided to the surface of the substrate 109.
The active species induced to the surface of the substrate 109 ash the resist on the substrate 109 and peel the resist on the substrate 109.
The process gas containing the ashed product and the like flows along the surface of the substrate 109, and excess process gas is discharged from the gas exhaust ports 103a and 103b.

  As described above, the flow of the process gas blown from the gas ejection port 113 flows along the inclined surface 117 of the dielectric 110, and induces the active species in the plasma P to the surface of the substrate 109, whereby one of the gases Compared with the case where process gas was introduced from the exhaust port 103b and excess gas was exhausted from the other gas exhaust port 103a, the ashing speed for the surface of the substrate 109 could be increased by about 20%. Thereby, the conveyance speed of the substrate 109 can be increased, and the time required for the plasma treatment can be shortened.

In addition, since the gas outlet 113 is located away from the plasma P generation region, the generation of plasma in the gas supply path 116 above the gas outlet 113 is also prevented.
Unlike the configuration of the first embodiment, if there is a gas outlet 113 in the generation region of the plasma P, the gas supply path 116 above the gas outlet 113 also supplies the gas when its diameter is sub-mm or more. Unnecessary discharge may occur in the path 116, and power efficiency may be reduced.
Furthermore, in the plasma P generation region, the temperature rise of the dielectric 110 due to the discharge becomes more significant than in other regions. However, if the gas injection port 113 is formed in such a plasma P generation region, this portion The strength is weakened, and the dielectric 110 may be damaged.

In order to form the gas outlet 113 in the region where the plasma P is generated and to prevent discharge from occurring in the gas supply path 116 above the gas outlet 113, the diameter of the gas supply path 116 is set to be small. It is necessary to process so as to be sub-mm or less.
However, it is technically difficult to process the diameter of the gas supply path 116 to a sub-mm or less, and even if processing is possible, it is not preferable in terms of cost.

  In the first embodiment, the substrate 109 has been described as an example of the object to be processed. However, the plasma processing apparatus 100 according to the first embodiment is not only a plasma process for a substrate introduced in an in-line method but also a sheet shape or a roll shape. The present invention can also be applied to plasma processing for an object to be processed.

In the above description, the case where the plasma process apparatus 100 is applied to ashing has been described as an example. However, the plasma process apparatus 100 according to the first embodiment can naturally be applied to uses such as etching and film formation.
When applied to etching or film formation, surface treatment such as alumite treatment or alumina spraying is performed on the surface of the high-frequency application electrode 106 or the ground electrode 107 facing the object to be processed, or a bulk dielectric. It is preferable to take measures so that the opposite surface is covered and the surface is not attacked by the process gas, active species after plasma generation, and products after reaction.

The frequency of the high-frequency power source 104 may be about 100 kHz to 100 MHz.
In addition to the above-mentioned alumina, the dielectric 110 may be made of a material having excellent heat resistance, electric resistance, plasma resistance, and gas resistance, such as aluminum nitride, and the material thereof is a processing condition such as process and input power. It is possible to select appropriately according to.
In addition, when the input power density is high, it is preferable to suppress the temperature rise of the part exposed to the plasma P by using the dielectric 110 made of a material having high thermal conductivity.

The process gas may be changed in gas type and mixing ratio according to the process, and the flow rate may be appropriately selected according to the process and the diameter of the gas supply path 116 so that desired process conditions can be obtained.
Further, in the first embodiment, the case where the groove-like recess 115 formed in the dielectric 110 is smaller than the generation region of the plasma P is shown as an example. However, the generation region of the plasma P is changed by changing the shape of the recess 115. You may restrict. However, in any case, the region where the plasma P is generated needs to be located away from the gas ejection port 113.

  In the first embodiment, the ground electrode 107 is arranged with a height difference on both sides along the Y-axis direction of the high frequency application electrode 106, and the dielectric 110 connecting the lower end surface of the high frequency application electrode 106 and the lower end surface of the ground electrode 107 The plasma P is generated in the concave portions 115 of the two inclined surfaces 117 by flowing the process gas along the two inclined surfaces 117, but the high frequency is generated so that the plasma P is generated only at one location. The application electrode 106 and the ground electrode 107 may be disposed.

  In addition, a gas introduction port for flowing a gas along the Y-axis direction parallel to the substrate 109 may be separately provided, and a process gas may also be flowed from the gas introduction port. The flow of the process gas that guides the active species generated in the step toward the surface of the substrate 109, that is, the flow of the process gas that is blown out from the gas outlet 113 and flows along the inclined surface 117 of the dielectric 110 must be stronger. I must.

Example 2
A plasma processing apparatus according to Embodiment 2 of the present invention will be described with reference to FIG. FIG. 3 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus according to the second embodiment.

As shown in FIG. 3, the plasma processing apparatus 200 according to the second embodiment forms gas ejection ports 213 at two locations along the Y-axis direction of the dielectric 210 that covers the lower end surface of the high-frequency application electrode 206. A part of the gas supply path 216 above the gas jet port 213 is directed to the lower end surface of the high frequency application electrode 206 so that the process gas blown from the gas jet port 213 flows along the inclined surface 217 of the dielectric 210. And bent.
Other configurations are the same as those of the plasma processing apparatus 100 (see FIG. 1) according to the first embodiment.

  According to the plasma processing apparatus 200 according to the second embodiment, since the gas supply passages 216 above the gas ejection ports 213 are partially bent, the gas flows more reliably along the inclined surface 217 of the dielectric 210. It is possible to create a more ideal gas flow in guiding the active species generated in the plasma P to the surface of the substrate 209.

Example 3
A plasma processing apparatus according to Embodiment 3 of the present invention will be described with reference to FIG. FIG. 4 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus according to the third embodiment.

As shown in FIG. 4, the plasma processing apparatus 300 according to the third embodiment is similar to the plasma processing apparatus 200 according to the second embodiment (see FIG. 3), and the Y axis of the dielectric 310 that covers the lower end surface of the high-frequency application electrode 306. Gas ejection ports 313 are respectively formed at two locations along the direction, and the gas supply path 316 above the gas ejection port 313 is linearly formed without bending. Other configurations are the same as those of the plasma processing apparatus 100 (see FIG. 1) according to the first embodiment.
In the plasma process apparatus 300 according to the third embodiment, since the gas supply path 316 is linear, processing of the gas supply path 316 is facilitated, and the manufacturing cost can be reduced.

Example 4
A plasma processing apparatus according to Embodiment 4 of the present invention will be described with reference to FIG. FIG. 5 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus according to the fourth embodiment.

  As shown in FIG. 5, the plasma processing apparatus 400 according to the fourth embodiment is arranged such that the lower end surface of the high frequency application electrode 406 and the lower end surface of the ground electrode 407 are substantially the same height in the Z-axis direction. Other configurations are the same as those of the plasma processing apparatus 100 (see FIG. 1) according to the first embodiment.

In the plasma processing apparatus 400 according to the fourth embodiment, the distance between the generation region of the plasma P and the surface of the substrate 409 can be made closer than in the plasma processing apparatus 100 according to the first embodiment, and the processing speed can be further increased.
Note that the region where the plasma P is generated, that is, the recess 415 is formed at a position where the flow direction of the process gas blown out from the gas outlet 413 in a predetermined direction is maintained. Active species generated in the plasma P generation region by the flow of the process gas can be efficiently guided to the surface of the substrate 409.

Example 5
A plasma processing apparatus according to Embodiment 5 of the present invention will be described with reference to FIG. FIG. 6 is a cross-sectional view showing a schematic configuration of the plasma processing apparatus according to the fifth embodiment.

As shown in FIG. 6, the plasma processing apparatus 500 according to the fifth embodiment has a configuration in which the plasma processing apparatus 400 according to the fourth embodiment is formed as one unit and two units are connected.
The high frequency application electrode 506 is connected to a common high frequency power source 504, and the gas discharge port 503b is shared by two connected units.

In the plasma process apparatus 400 according to the above-described fourth embodiment, the generation region of the plasma P is reduced when the input power density is small. However, as in the fifth embodiment, the two units are connected to each other for some reason. Even when the input power density and the gas flow rate must be kept low, a desired processing speed can be obtained.
The number of units to be connected is not limited to two, and three or more units may be connected. In this case, different processes can be performed by changing the process gas, power condition, and the like for each unit.

It is sectional drawing which shows schematic structure of the plasma process apparatus by Example 1 of this invention. It is a bottom view of the electrode part of the plasma process apparatus shown by FIG. It is sectional drawing which shows schematic structure of the plasma process apparatus by Example 2 of this invention. It is sectional drawing which shows schematic structure of the plasma process apparatus by Example 3 of this invention. It is sectional drawing which shows schematic structure of the plasma processing apparatus by Example 4 of this invention. It is sectional drawing which shows schematic structure of the plasma processing apparatus by Example 5 of this invention. It is sectional drawing which shows the schematic structure of the conventional plasma process apparatus.

Explanation of symbols

100, 200, 300, 400, 500 ... plasma processing apparatus 101 ... reaction vessel 102 ... gas inlet 103a, 103b, 503b ... gas exhaust 104 ... high frequency power source 105 ... matching Containers 106, 206, 306, 406, 506... High frequency application electrodes 107, 407... Ground electrodes 109, 209, 409... Substrate 110, 210, 310. ... Roller transport parts 113, 213, 313, 413 ... Gas jets 114 ... Gas diffusion plates 115 ... Recesses 116, 216, 316 ... Gas supply paths 117, 217 ... Inclined surfaces P ... Plasma

Claims (6)

  A normal pressure reaction vessel covering at least a part of the object to be treated, a gas supply means for supplying gas into the reaction container, a gas discharge means for discharging gas from the reaction container, and a treatment container accommodated in the reaction container A pair of first and second electrodes disposed at a predetermined interval above the object, and a dielectric that fills a space defined between the first and second electrodes. When electric power is applied, plasma is partially generated on the surface of the dielectric located between the second electrode and the gas supply means is directed from outside the region where the plasma is generated toward the surface of the object to be processed. A plasma process apparatus that supplies a gas and introduces active species generated in plasma to a surface of an object to be processed on the flow of the supplied gas.   The first and second electrodes each have a flat lower end surface facing the object to be processed, and the first and second electrodes are arranged so that their lower end surfaces have a predetermined height difference with respect to the object to be processed. The dielectric is provided so as to cover the lower end surfaces of the first and second electrodes, and inclines with respect to the lower end surfaces of the first and second electrodes in part from the first electrode to the second electrode. The plasma processing apparatus according to claim 1, wherein the plasma processing apparatus has an inclined surface.   The first and second electrodes each have a flat lower end surface facing the object to be processed, and the first and second electrodes are arranged such that their lower end surfaces are substantially the same height as the object to be processed. The plasma processing apparatus according to claim 1, wherein the dielectric is provided so as to cover lower end surfaces of the first and second electrodes.   4. The plasma processing apparatus according to claim 2, wherein the gas supply means has a gas supply path formed so as to penetrate the first electrode and the dielectric.   The gas supply path has a gas outlet exposed to the object to be processed at one end, and at least a part of the gas supply path including the gas outlet forms a predetermined angle with respect to the lower end surface of the first electrode. The plasma processing apparatus according to claim 4, wherein the plasma processing apparatus is bent.   The plasma processing apparatus according to claim 1, wherein the dielectric has a concave portion that is partially recessed.

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