JP5089652B2 - COMPOSITE CIRCUIT AND ELECTRONIC DEVICE HAVING COMPOSITE CIRCUIT - Google Patents

Description

  The invention disclosed in this specification relates to a structure in which a thin film transistor, a ceramic element, and a ferrite element are integrated. The invention disclosed in this specification can be used for, for example, a small and lightweight information terminal represented by a mobile phone.

  In recent years, a technique for manufacturing a transistor using a silicon thin film formed over a quartz substrate or a glass substrate has been studied. They are partly commercialized. This transistor is called a thin film transistor or a TFT.

  The main purpose of studying TFTs is to use them in liquid crystal display devices. This has a configuration in which a TFT is arranged as a switching element in each of a large number of pixels arranged in a matrix, and the charge held in the pixel electrode is controlled by the TFT.

  Further, as a further advanced configuration, a configuration in which a peripheral drive circuit for driving the circuit in addition to the active matrix circuit is also configured by TFTs and the degree of integration is further increased is also known.

  In addition to the peripheral drive circuit, it is also considered that a circuit for handling image information and a circuit for exchanging information with the outside are configured by thin film transistors to systemize the entire configuration.

  In recent years, information processing terminals having various information processing functions have attracted attention. This information processing terminal is called a mobile computer. The functions include a communication function such as a FAX function and a telephone function, storage of various information, and an arithmetic processing function.

  This information processing terminal is required to be small and light so as to be portable. Moreover, it is required to mount a thin film display (also referred to as a flat panel display) for handling image information.

  In addition, the information processing terminal naturally needs a circuit for exchanging information with the outside.

  In the future, it will be inevitable that cordless communication will progress as an information transmission means. Specifically, a function for exchanging information using a radio wave of GHz band or higher that can exchange high-density information is required.

  Therefore, the information processing terminal as described above is required to have a high-frequency circuit having a function capable of oscillating and receiving a GHz band radio wave in a light-weight and compact device.

  In general, the high-frequency circuit is configured by integrating a transistor using a single crystal silicon wafer, a transistor using a compound semiconductor, a chip-type inductor or capacitor, and a filter element such as a SAW element.

  However, in the future, it is difficult to further increase the integration in a technology trend that requires more and more functions in the future and further requires a reduction in size, weight, thickness, and cost.

  An object of the invention disclosed in this specification is to provide a novel configuration capable of integrating a high-frequency circuit capable of handling a high frequency such as a GHz band.

One of the inventions disclosed in this specification is:
First and second substrates bonded together;
A circuit formed of a thin film transistor formed on the bonding surface side of the first substrate;
A circuit made of a ceramic element formed on the bonding surface side of the second substrate;
Have
The circuit made of the thin film transistor and the circuit made of the ceramic element are connected.

  In the above structure, it is effective to dispose a heat dissipation layer on the first substrate side in order to dissipate heat generated by the thin film transistor.

In the above configuration,
As the ceramic element, one constructed using a dielectric material or a magnetic material can be used.

Moreover, as a ceramic element, the thing using a ferrite can be used.
In addition to aluminum nitride (AlN), the material constituting the heat dissipation layer is a material made by adding oxygen to aluminum nitride (referred to as AlON), a crystal composed of Si, Al, O, and N elements collectively called sialon. It is also possible to use a material represented by a quality compound, AlONC.

  These materials are useful in terms of stress relaxation between the substrate and the element and control of thermal conductivity.

  Further, these materials have characteristics such as electrical insulation, high thermal conductivity, heat resistance, and translucency.

  By utilizing the invention disclosed in this specification, a novel structure capable of integrating a high-frequency circuit capable of handling a high frequency such as a GHz band can be provided.

  That is, a high-frequency module integrated in a small size by providing a connection terminal (connection wiring) penetrating the substrate on which the TFT is formed and connecting the connection terminal to a laminated element formed on another substrate. Can be obtained.

  By using a module using the invention disclosed in this specification, a portable information terminal can be further reduced in size and weight. Furthermore, the cost can be reduced.

10A and 10B illustrate a manufacturing process of a thin film transistor. The figure which shows the process of producing the structure which compounded the thin-film transistor and SAW folder. The equivalent circuit diagram of the structure shown in FIG. 2, and the enlarged view which looked at a part of structure shown in FIG. 2 from the upper surface. 10A and 10B illustrate a manufacturing process of a thin film transistor. The figure which shows the relationship between the dimension of a MOS transistor, and a characteristic. The figure which shows the structure which compounded the thin-film transistor and SAW folder. The figure which shows the structure of the edge part of the compounded module. FIG. 11 is a diagram showing an electronic device including a thin film transistor composite circuit. The block diagram which shows the structure of a mobile telephone.

  As shown in FIG. 2, the thin film transistor circuit formed on the quartz substrate 101 and the SAW filter element formed on the quartz substrate 134 are combined to form a composite.

  By doing so, a configuration in which the thin film transistor circuit and the ceramic element are integrated integrally can be obtained.

Employing a configuration in which thin film transistors are integrated on a quartz substrate has the following utility.
(1) The selectivity of the shape of the substrate is high.
(2) The area can be increased.
(3) An active matrix display or the like can be integrated on the same substrate.
(4) The problem of stress generation when the degree of integration is increased can be alleviated.

  1 to 3 show a manufacturing process of this embodiment. The present embodiment shows a configuration in which a thin film transistor circuit and a SAW filter (surface acoustic wave filter) are integrated. The SAW filter has a BPF (band pass filter) function.

  Here, a configuration including a CMOS circuit and a SAW filter connected to the output thereof is shown.

  First, as shown in FIG. 1A, thin film transistor active layers 103 and 106 made of a crystalline silicon film are formed on a quartz substrate 101. A method for forming the active layer will be described later.

  After the active layers 103 and 106 are formed, a gate insulating film 108 is formed. The gate insulating film is a laminated film of a silicon oxide film formed by a plasma CVD method and a thermal oxide film formed thereafter.

  After the gate insulating film 108 is formed, a pattern serving as a gate electrode made of aluminum is formed. Then, porous anodic oxide films 109 and 112 are first formed by anodic oxidation. Further, anodic oxide films 111 and 113 having a dense barrier type film quality are formed by anodic oxidation.

  The film quality of these two types of anodic oxide films can be determined by selecting the type of electrolytic solution used during anodic oxidation.

  In this way, the state shown in FIG. Next, the impurity element is doped under conditions for forming the source and drain regions.

  Here, a P-channel TFT is formed on the left side, and an N-channel TFT is formed on the right side.

  This step is performed by selectively masking the region where each TFT is formed with a resist mask and selectively doping with a dopant element for imparting P and N types using a plasma doping method. .

  In this step, the source region 102 and the drain region 104 of the P-channel TFT are formed in a self-aligned manner. Further, the source region 107 and the drain region 105 of the N-channel TFT are formed in a self-aligned manner.

  Next, the porous anodic oxide films 109 and 112 are selectively removed. In this way, the state shown in FIG.

  Doping is performed again in the state shown in FIG. Here, doping is performed with a lower dose than the previous doping (that is, under the condition of light doping).

  In this step, light doping is performed on the regions 115, 119, 122, and 126. The regions 115 and 119 become low-concentration impurity regions of the P-channel TFT. The regions 122 and 126 become low-concentration impurity regions of the N-channel TFT.

  In this way, the state shown in FIG. Next, a silicon nitride film 128 is formed as an interlayer insulating film by a plasma CVD method. Further, a polyimide resin film 129 is formed by spin coating.

  When a resin material is used for the interlayer insulating film, the surface can be flattened, which is advantageous when a wiring or the like is formed later. As the resin material, polyamide, polyimide amide, acrylic, epoxy, or the like can be used in addition to polyimide.

  In this way, the state shown in FIG. Next, contact holes are formed, and a source electrode (and source wiring extending therefrom) 130 of a P-channel TFT, a source electrode (and source wiring extending therefrom) 132 of an N-channel TFT, A common drain electrode (and a drain wiring extending therefrom) 31 is formed in the TFT.

  In this way, the state shown in FIG. Next, as illustrated in FIG. 2A, an aluminum nitride film is formed so as to cover the electrodes (and wirings) 130 to 132.

  This aluminum nitride functions as a heat dissipation layer. It also functions as a protective layer.

  When the state shown in FIG. 2A is obtained, a counter substrate on which a SAW filter is formed is formed, and is bonded to the substrate 101.

  In the counter substrate, a dielectric material 135 made of barium titanate and an electrode 136 are formed on a substrate 134 made of a suitable material such as ceramics.

  FIG. 3B shows a state where the SAW filter is viewed from above. As shown in FIG. 3B, the SAW filter has a configuration formed on a dielectric material so that the comb-shaped electrodes 136 and 301 are engaged with each other.

  A composite circuit composed of a TFT circuit and a SAW filter is obtained by bonding the substrate 134 and the substrate 101 through an adhesive layer 138. (Fig. 2 (B))

  An equivalent circuit having the structure shown in FIG. 2B is shown in FIG.

  By adopting the configuration shown in this embodiment, various circuits constituted by thin film transistors (TFTs) and filter elements can be integrated into a module.

  With this configuration, a high-frequency module that can be used for a mobile phone or a portable information processing terminal can be obtained.

  By using such modularized components, the mobile phone and the portable information processing terminal can be further downsized and the cost can be reduced.

  Here, an example in which the SAW filter is integrated is shown, but an inductor, a chip capacitor, a filter using ferrite, or the like can be integrated.

[Thin Film Transistor Manufacturing Process]
A manufacturing process of a thin film transistor until the state illustrated in FIG.

  First, as shown in FIG. 4A, an amorphous silicon film 402 is formed to a thickness of 500 mm on a quartz glass substrate 101 by low pressure thermal CVD. It is important that the surface of the quartz substrate is sufficiently flat.

  After the amorphous silicon film is formed, a mask 403 made of a silicon oxide film is formed. The mask 403 has an opening at a portion indicated by 404. In this opening 404 portion, the amorphous silicon film 402 is exposed.

  This opening is formed as having a longitudinal shape in the depth direction from the front side of the drawing.

  Next, a nickel acetate salt solution containing 100 ppm (weight conversion) nickel element is applied by spin coating. Thus, a state in which the nickel element is held in contact with the surface as indicated by 405 is obtained. (Fig. 4 (A))

  As a method for introducing nickel element, a CVD method, a sputtering method, a plasma treatment, an ion implantation method, or the like can be used.

  In addition to the nickel element, a material selected from Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au can be used.

  Next, heat treatment is performed at 600 ° C. for 8 hours in a normal-pressure nitrogen atmosphere. In this step, crystal growth proceeds in a direction parallel to the substrate as indicated by 405. (Fig. 4 (B))

  This heat treatment is performed in an electric furnace. By performing this heat treatment, it is possible to obtain a state in which a large number of cylindrical crystal structures having a diameter of several tens to several hundreds of nanometers are arranged in parallel. The longitudinal direction of this crystal structure coincides with the crystal growth direction indicated by 405. This crystal structure is partitioned by crystal grain boundaries extending in the extending direction. Moreover, it has been confirmed that this crystal grain boundary is inactive.

  The temperature of the heat treatment can be selected from about 450 ° C. to 1100 ° C.

  After the heat treatment for crystallization is completed, the mask 403 made of a silicon oxide film is removed. Then, heat treatment is performed at 950 ° C. for 20 minutes in an oxygen atmosphere containing 3% by volume of HCl. In this step, a thermal oxide film is formed to a thickness of 200 mm. Then, the thickness of the silicon film decreases from 500 mm to 400 mm.

  It is important that the heating temperature during the thermal oxidation is 800 ° C to 1100 ° C, preferably 900 ° C to 1100 ° C.

  In this step, with the formation of the thermal oxide film, the number of dangling bonds of silicon atoms is reduced, and defects in the film are greatly reduced. This thermal oxide film formation process is important, and through this process, the high characteristics of the finally obtained thin film transistor are guaranteed.

  In this thermal oxide film, the contained nickel element has a relatively high concentration compared to the silicon film.

  By forming this thermal oxide film, a cylindrical crystal structure can be obtained in a prominent form. This has been confirmed by observation with an electron microscope.

  When the formation of the thermal oxide film is completed, the thermal oxide film is removed. By doing so, nickel element can be eliminated.

  Next, by patterning the obtained crystalline silicon film, patterns indicated by 103 and 106 in FIG. 4C are obtained.

  Here, the pattern 103 is a pattern that becomes an active layer of a P-channel type thin film transistor. Reference numeral 106 denotes a pattern serving as an active layer of a P-channel type thin film transistor.

  After the active layer is formed, a silicon oxide film (CVD oxide film) is first formed to a thickness of 200 mm by plasma CVD to form the gate insulating film 409. After the CVD oxide film is formed, thermal oxidation is performed again to form a thermal oxide film.

  In the step of forming the thermal oxide film, heat treatment is performed at 950 ° C. for 20 minutes in an oxygen atmosphere containing 3% by volume of HCl. In this step, a thermal oxide film is formed to a thickness of 200 mm.

  This thermal oxide film is formed inside the previously formed CVD oxide film, that is, in the vicinity of the interface with the active layer. In this way, the gate insulating film 409 made of the thermal oxide film and the CVD oxide film stacked in order from the inside is formed. The final active layer thickness is 300 mm. (Fig. 4 (C))

  After obtaining the state shown in FIG. 4C, an aluminum film containing a small amount of scandium is formed to a thickness of 400 nm (4000 mm) by sputtering. And by patterning this, the aluminum pattern shown by 410,411 of FIG.4 (D) is formed. This aluminum pattern is a pattern that becomes the basis of the gate electrode. In this way, the state shown in FIG.

  A thin film transistor as shown here exhibits characteristics equal to or better than those of a MOS transistor using a single crystal silicon wafer.

  A solid line in FIG. 8 shows an example of characteristics of a thin film transistor having a gate insulating film thickness of 30 nm (300 mm) and a channel length of 0.6 μm obtained according to the manufacturing method shown here.

  This thin film transistor is manufactured by a manufacturing process of the 2 μm rule. As a method for shortening the channel length, a technique of anodizing the side surface of the gate electrode is used.

  The horizontal axis of the figure is the power supply voltage, and the vertical axis is the delay time. Delay Time corresponds to the reciprocal of the operation speed, and the smaller the value, the higher the speed operation is possible.

  The other data indicated by the dotted line in FIG. 8 is comparative data indicating a MOS transistor using a single crystal silicon wafer.

  The comparison data shown in FIG. 5 shows the relationship between the dimension (channel length and the thickness of the gate insulating film) of the MOS transistor called the scaling law and the delay time.

  The scaling law is an idea that, as the size of a MOS transistor is reduced, its high frequency characteristics are increased according to a specific law. (Of course not exact)

  The plot points indicated by the dotted lines in FIG.

  Among them, it can be seen that the thin film transistor obtained by the manufacturing method disclosed in this specification has a higher rank than the high-frequency characteristics predicted from the conventional scaling law.

  If the scaling rule of a MOS transistor using a single crystal silicon wafer is followed, the plot point of the TFT indicated by the solid line has a larger Delay Time (delay time).

  For example, if the conventional scaling law is followed, the delay time of a MOS transistor having a channel length of 0.6 μm and a gate insulating film thickness (tox) of 30 nm is at least 0.5 μm, and the gate insulating film Should have a thickness (tox) greater than the 11 nm plot point.

  As described above, the thin film transistor disclosed in this specification exhibits characteristics superior to those of conventional MOS transistors.

  This embodiment relates to a structure having a function of more effectively dissipating heat generated by a TFT in the structure as shown in FIG.

  In this embodiment, as shown in FIG. 6, an aluminum nitride film is formed on a substrate on which a TFT is formed.

  With such a configuration, the active layer of the TFT is in direct contact with the cooling layer, so that the heat dissipation effect can be further enhanced.

  This embodiment relates to a configuration that can be used when the configuration shown in FIG. 3A is used as a module.

  FIG. 7 shows the state of the module end. In the figure, a state in which a wiring 710 extending from the source (or drain) of the TFT is connected to an extraction electrode (extraction terminal) 713 to the outside is shown.

  In addition, a state in which a wiring 711 extending from a ceramic element or the like is connected to an external extraction electrode (extraction terminal) 712 is shown.

  With such a configuration, a modularized substrate can be directly inserted into a connection terminal provided in the apparatus.

  With such a configuration, the versatility of the apparatus can be increased, and the production cost can be reduced.

  This embodiment shows an example in which an active matrix type liquid crystal display device is integrated in another portion not shown in the case where the configuration shown in FIG. 2B is adopted.

  In this case, by providing a liquid crystal layer between two substrates, a liquid crystal display device can be disposed in that portion.

  By doing so, it is possible to integrate a high-frequency circuit composed of TFTs and passive elements and an active matrix liquid crystal display device. This configuration is suitable as a component constituting a portable information processing terminal.

  In this embodiment, an example of an electronic device using a composite circuit in which a thin film transistor circuit and a passive element or a ceramic element are combined is shown.

  FIG. 8A shows a portable information processing terminal, which has a communication function using a telephone line.

  This electronic device includes an integrated circuit 2006 formed of a composite circuit disclosed in this specification in a main body 2001. An active matrix liquid crystal display 2005, a camera unit 2002 for capturing an image, and an operation switch 2004 are provided.

  FIG. 8B illustrates an electronic device called a head mounted display. This device has a function of wearing a head and displaying an image in front of the eyes in a pseudo manner.

  In this electronic apparatus, a main body 2101 is attached to the head by a band 2103. The image is created by the liquid crystal display device 2102 corresponding to the left and right eyes.

  Since such an electronic device must be small and light, it is suitable for using the composite circuit disclosed in this specification.

  FIG. 8C has a function of displaying map information and various information based on signals from artificial satellites. Information from the satellite captured by the antenna 2204 is processed by an electronic circuit provided inside the main body 2201, and necessary information is displayed on the liquid crystal display device 2202.

  The operation of the apparatus is performed by an operation switch 2203. Even in such an apparatus, a device for miniaturizing the entire configuration is required. For that purpose, it is useful to use the composite circuit disclosed in this specification.

  FIG. 8D illustrates a mobile phone. This electronic device includes a main body 2301 that includes an antenna 2306, an audio output unit 2302, a liquid crystal display device 2304, operation switches 2305, and an audio input unit 2303.

  Even in such an electronic device, it is useful to use the composite circuit disclosed in this specification in order to reduce the overall configuration.

  FIG. 9 is a block diagram of an electronic device as shown in FIG.

  In this configuration, for example, in a reception state, radio waves received by the antenna 2002 are sent to the wireless input / output unit 2003. Then, the signal is transmitted to the audio processing unit 2006 through the side demodulation unit 2004 and the channel codec unit 2005 controlled by the wireless control unit 2007 and the CPU 2008. And it outputs as audio | voice information from the speaker 2010 driven by the audio | voice processing part 2006. FIG.

  In the oscillation state, audio information is input from the microphone 2009, and is output as a radio wave from the antenna 2002 via a path reverse to the above.

  An electronic device illustrated in FIG. 10E is a portable imaging device called a video camera. The electronic apparatus includes a liquid crystal display 2402 attached to an opening / closing member and an operation switch 2404 attached to the opening / closing member.

  Further, the main body 2401 includes an image receiving unit 2406, an integrated circuit 2407, an audio input unit 2403, operation switches 2404, and a battery 2405.

  Even in such an electronic device, it is useful to use the composite circuit disclosed in this specification in order to reduce the overall configuration.

  In particular, when a load function such as a communication function is added, it is necessary to incorporate a high-frequency circuit therefor, that is, to integrate it.

  For this purpose, it is useful to use the invention disclosed in this specification.

  An electronic device illustrated in FIG. 8F is a projection liquid crystal display device. This device includes a light source 2502, a liquid crystal display device 2503, and an optical system 2504 in a main body 2501, and has a function of projecting an image onto a screen 2505.

  Projection-type display devices are also required to be small and light. Therefore, it is useful to use the invention disclosed in this specification for that purpose.

  Further, as the liquid crystal display device in the electronic device described above, either a transmission type or a reflection type can be used. The transmissive type is advantageous in terms of display characteristics, and the reflective type is advantageous when pursuing low power consumption and reduction in size and weight.

  As a display device, a flat panel display such as an active matrix EL display or a plasma display can be used.

  The present embodiment shows an example in which a polycrystalline silicon wafer is used as a substrate in the configuration shown in the first embodiment.

  Polycrystalline silicon wafers can be obtained at a cost of a fraction of that of a quartz substrate. Therefore, a significant contribution can be made to reducing the cost of circuits and devices.

  In this embodiment, a silicon oxide film is first formed to a thickness of 1 μm on a polycrystalline silicon wafer by plasma CVD. Next, thermal oxidation is performed to form a thermal oxide film having a thickness of 50 nm (500 mm).

  By doing so, a silicon oxide film having a flat surface and excellent interface characteristics can be formed on the polycrystalline silicon wafer.

  Then, using this silicon oxide film as a base film (base), a TFT is fabricated thereon.

  It is not preferable to directly form a thermal oxide film on the polycrystalline silicon wafer and use this thermal oxide film as a base film. In this case, reflecting the polycrystalline structure of the substrate, the surface of the thermal oxide film becomes uneven, which adversely affects the fabrication of the TFT and its characteristics.

  In addition, a single crystal silicon wafer can be used instead of the polycrystalline silicon wafer, but in this case, the advantage of low cost is reduced.

DESCRIPTION OF SYMBOLS 101 Quartz substrate 102 Source region 103 Active layer 104 Drain region 105 Drain region 106 Active layer 107 Source region 108 Gate insulating film 109 Porous anodic oxide film (aluminum oxide film)
110 Gate electrode made of aluminum 111 Anodized film (aluminum oxide film) having a dense film quality
112 Porous anodic oxide film (aluminum oxide film)
113 Anodized film (aluminum oxide film) having a dense film quality
114 Gate electrode made of aluminum 115 Low concentration impurity region 116 Offset gate region 117 Channel formation region 118 Offset gate region 119 Low concentration impurity region 122 Low concentration impurity region 123 Offset gate region 124 Channel formation region 125 Offset gate region 126 Low concentration impurity region 128 Silicon nitride film 129 Polyimide resin film 130 Source electrode (source wiring)
131 Drain electrode (drain wiring)
132 Source electrode (source wiring)
133 Aluminum nitride film 134 Quartz substrate 135 Zirconium titanate film 136 Electrode 137 Contact electrode 138 Adhesive layer 301 136 Paired electrode

Claims (11)

A composite circuit having a function of wirelessly exchanging information,
An active layer,
A gate electrode provided on the active layer;
An insulating film provided on the gate electrode and provided to cover the active layer;
A wiring electrically connected to the impurity region of the active layer;
A circuit comprising a transistor having
A passive element laminated with an adhesive layer so as to overlap the circuit,
A film functioning as a protective layer is provided over the transistor,
The composite circuit, wherein the passive element and the wiring are electrically connected through an opening provided in the film functioning as the protective layer. A composite circuit having a function of handling high frequencies,
An active layer,
A gate electrode provided on the active layer;
An insulating film provided on the gate electrode and provided to cover the active layer;
A wiring electrically connected to the impurity region of the active layer;
A circuit comprising a transistor having
A passive element laminated with an adhesive layer so as to overlap the circuit,
A film functioning as a protective layer is provided over the transistor,
The composite circuit, wherein the passive element and the wiring are electrically connected through an opening provided in the film functioning as the protective layer. A composite circuit having a function of transmitting and receiving radio waves,
An active layer,
A gate electrode provided on the active layer;
An insulating film provided on the gate electrode and provided to cover the active layer;
A wiring electrically connected to the impurity region of the active layer;
A circuit comprising a transistor having
A passive element laminated with an adhesive layer so as to overlap the circuit,
A film functioning as a protective layer is provided over the transistor,
The composite circuit, wherein the passive element and the wiring are electrically connected through an opening provided in the film functioning as the protective layer. A composite circuit having a function of wirelessly exchanging information,
An active layer,
A gate electrode provided on the active layer;
An insulating film provided on the gate electrode and provided to cover the active layer;
A wiring electrically connected to the impurity region of the active layer;
A circuit comprising a transistor having
A passive element laminated with an adhesive layer so as to overlap the circuit,
A film functioning as a heat dissipation layer is provided on the transistor,
The composite circuit, wherein the passive element and the wiring are electrically connected through an opening provided in the film functioning as the heat dissipation layer. A composite circuit having a function of handling high frequencies,
An active layer,
A gate electrode provided on the active layer;
An insulating film provided on the gate electrode and provided to cover the active layer;
A wiring electrically connected to the impurity region of the active layer;
A circuit comprising a transistor having
A passive element laminated with an adhesive layer so as to overlap the circuit,
A film functioning as a heat dissipation layer is provided on the transistor,
The composite circuit, wherein the passive element and the wiring are electrically connected through an opening provided in the film functioning as the heat dissipation layer. A composite circuit having a function of transmitting and receiving radio waves,
An active layer,
A gate electrode provided on the active layer;
An insulating film provided on the gate electrode and provided to cover the active layer;
A wiring electrically connected to the impurity region of the active layer;
A circuit comprising a transistor having
A passive element laminated with an adhesive layer so as to overlap the circuit,
A film functioning as a heat dissipation layer is provided on the transistor,
The composite circuit, wherein the passive element and the wiring are electrically connected through an opening provided in the film functioning as the heat dissipation layer. 7. The composite circuit according to claim 1, wherein the passive element includes a dielectric material. 7. The composite circuit according to claim 1, wherein the passive element includes a magnetic material. 9. The composite circuit according to claim 1, further comprising a lead terminal. An electronic device comprising the composite circuit according to claim 1. 10. An electronic device having a composite circuit, comprising the composite circuit according to claim 1 and a display.

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