JP5075761B2 - フラッシュメモリを用いたストレージ装置 - Google Patents

フラッシュメモリを用いたストレージ装置 Download PDF

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Publication number
JP5075761B2
JP5075761B2 JP2008213464A JP2008213464A JP5075761B2 JP 5075761 B2 JP5075761 B2 JP 5075761B2 JP 2008213464 A JP2008213464 A JP 2008213464A JP 2008213464 A JP2008213464 A JP 2008213464A JP 5075761 B2 JP5075761 B2 JP 5075761B2
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Japan
Prior art keywords
storage
storage area
flash memory
capacity
storage device
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Expired - Fee Related
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JP2008213464A
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English (en)
Japanese (ja)
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JP2009301525A (ja
JP2009301525A5 (enExample
Inventor
山本　　政行
山本　　彰
昭 藤林
潤 北原
義樹 加納
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Hitachi Ltd
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Hitachi Ltd
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Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2008213464A priority Critical patent/JP5075761B2/ja
Priority to US12/248,519 priority patent/US8275965B2/en
Publication of JP2009301525A publication Critical patent/JP2009301525A/ja
Publication of JP2009301525A5 publication Critical patent/JP2009301525A5/ja
Priority to US13/466,163 priority patent/US8429372B2/en
Application granted granted Critical
Publication of JP5075761B2 publication Critical patent/JP5075761B2/ja
Priority to US13/867,155 priority patent/US8806170B2/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
    • G06F3/0614—Improving the reliability of storage systems
    • G06F3/0616—Improving the reliability of storage systems in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0628—Interfaces specially adapted for storage systems making use of a particular technique
    • G06F3/0638—Organizing or formatting or addressing of data
    • G06F3/0644—Management of space entities, e.g. partitions, extents, pools
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
    • G06F3/0601—Interfaces specially adapted for storage systems
    • G06F3/0668—Interfaces specially adapted for storage systems adopting a particular infrastructure
    • G06F3/0671—In-line storage system
    • G06F3/0683—Plurality of storage devices
    • G06F3/0685—Hybrid storage combining heterogeneous device types, e.g. hierarchical storage, hybrid arrays
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/10—Providing a specific technical effect
    • G06F2212/1032—Reliability improvement, data loss prevention, degraded operation etc
    • G06F2212/1036—Life time enhancement
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7206—Reconfiguration of flash memory system

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Information Retrieval, Db Structures And Fs Structures Therefor (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Memory System (AREA)
JP2008213464A 2008-05-14 2008-08-22 フラッシュメモリを用いたストレージ装置 Expired - Fee Related JP5075761B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008213464A JP5075761B2 (ja) 2008-05-14 2008-08-22 フラッシュメモリを用いたストレージ装置
US12/248,519 US8275965B2 (en) 2008-05-14 2008-10-09 Creating substitute area capacity in a storage apparatus using flash memory
US13/466,163 US8429372B2 (en) 2008-05-14 2012-05-08 Allocating substitute area capacity in a storage system using flash memory packages
US13/867,155 US8806170B2 (en) 2008-05-14 2013-04-22 Accessing a hard disk drive and a flash memory with different formats in a storage system

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008126608 2008-05-14
JP2008126608 2008-05-14
JP2008213464A JP5075761B2 (ja) 2008-05-14 2008-08-22 フラッシュメモリを用いたストレージ装置

Publications (3)

Publication Number Publication Date
JP2009301525A JP2009301525A (ja) 2009-12-24
JP2009301525A5 JP2009301525A5 (enExample) 2011-03-31
JP5075761B2 true JP5075761B2 (ja) 2012-11-21

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JP2008213464A Expired - Fee Related JP5075761B2 (ja) 2008-05-14 2008-08-22 フラッシュメモリを用いたストレージ装置

Country Status (2)

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US (3) US8275965B2 (enExample)
JP (1) JP5075761B2 (enExample)

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Publication number Priority date Publication date Assignee Title
JP5075761B2 (ja) 2008-05-14 2012-11-21 株式会社日立製作所 フラッシュメモリを用いたストレージ装置
EP2507700A1 (en) * 2009-12-04 2012-10-10 Marvell World Trade Ltd. Virtualization of storage devices
WO2011114379A1 (en) * 2010-03-18 2011-09-22 Hitachi, Ltd. Storage controller coupled to storage apparatus
US9146875B1 (en) * 2010-08-09 2015-09-29 Western Digital Technologies, Inc. Hybrid drive converting non-volatile semiconductor memory to read only based on life remaining
JP5641900B2 (ja) * 2010-11-29 2014-12-17 キヤノン株式会社 管理装置及びその制御方法、並びにプログラム
US8510528B2 (en) * 2010-12-29 2013-08-13 Teradata Us, Inc. Differential data storage based on predicted access frequency
US8886901B1 (en) * 2010-12-31 2014-11-11 Emc Corporation Policy based storage tiering
US9280550B1 (en) 2010-12-31 2016-03-08 Emc Corporation Efficient storage tiering
US8667237B2 (en) 2011-03-08 2014-03-04 International Business Machines Corporation Deleting relations in multi-target, point-in-time-copy architectures with data deduplication
WO2013038442A1 (en) * 2011-09-13 2013-03-21 Hitachi, Ltd. Storage system comprising flash memory, and storage control method
JP5621801B2 (ja) * 2012-03-07 2014-11-12 日本電気株式会社 磁気ディスク制御装置、磁気ディスク装置および磁気ディスク制御方法
CN104106038A (zh) 2012-03-13 2014-10-15 株式会社日立制作所 具有带有非易失性半导体存储器的非易失性半导体存储设备的存储系统
US10037271B1 (en) * 2012-06-27 2018-07-31 Teradata Us, Inc. Data-temperature-based control of buffer cache memory in a database system
US9665599B2 (en) * 2013-06-03 2017-05-30 International Business Machines Corporation Maintaining database consistency when nearing the end of a database recovery log
US9396128B2 (en) * 2013-06-13 2016-07-19 Samsung Electronics Co., Ltd. System and method for dynamic allocation of unified cache to one or more logical units
KR102149468B1 (ko) * 2013-06-13 2020-08-28 삼성전자 주식회사 통합 캐시를 하나 또는 복수의 논리 유닛에 동적 할당하는 시스템 및 방법
JP6021759B2 (ja) * 2013-08-07 2016-11-09 株式会社東芝 メモリシステムおよび情報処理装置
JP6006431B2 (ja) * 2013-10-10 2016-10-12 株式会社日立製作所 ストレージシステムおよびデータ記憶方法
US9362000B2 (en) 2014-09-05 2016-06-07 Kabushiki Kaisha Toshiba Memory system and management method thereof
US9542118B1 (en) * 2014-09-09 2017-01-10 Radian Memory Systems, Inc. Expositive flash memory control
US10452302B2 (en) * 2015-04-09 2019-10-22 Hitachi, Ltd. Storage system and data control method
JP6554990B2 (ja) 2015-08-11 2019-08-07 富士通株式会社 ストレージ制御装置およびストレージ制御プログラム
JP2017107321A (ja) * 2015-12-08 2017-06-15 京セラドキュメントソリューションズ株式会社 電子機器およびデータアクセス制御プログラム
CN106020717B (zh) * 2016-05-05 2020-10-27 联想(北京)有限公司 数据处理方法及电子设备
CN108470071B (zh) * 2018-03-29 2022-02-18 联想(北京)有限公司 一种数据处理方法及装置

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JP3231832B2 (ja) * 1991-11-26 2001-11-26 株式会社日立製作所 フラッシュメモリを記憶媒体とした半導体ディスク
US6347051B2 (en) * 1991-11-26 2002-02-12 Hitachi, Ltd. Storage device employing a flash memory
JPH06332806A (ja) * 1993-05-25 1994-12-02 Hitachi Ltd フラッシュメモリを記憶媒体とする記憶システムおよびその制御方法
KR970008188B1 (ko) 1993-04-08 1997-05-21 가부시끼가이샤 히다찌세이사꾸쇼 플래시메모리의 제어방법 및 그것을 사용한 정보처리장치
US6529416B2 (en) * 2000-11-30 2003-03-04 Bitmicro Networks, Inc. Parallel erase operations in memory systems
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JP4433792B2 (ja) * 2003-12-26 2010-03-17 Ｔｄｋ株式会社 メモリコントローラ及びメモリコントローラを備えるフラッシュメモリシステム、並びに、フラッシュメモリの制御方法
US20080147964A1 (en) * 2004-02-26 2008-06-19 Chow David Q Using various flash memory cells to build usb data flash cards with multiple partitions and autorun function
JP5008845B2 (ja) * 2005-09-01 2012-08-22 株式会社日立製作所 ストレージシステムとストレージ装置及びその制御方法
KR20050107369A (ko) * 2005-10-27 2005-11-11 서운식 모바일 기기를 위한 코드 직접 수행기능을 갖는 대용량저장장치 및 제어 방법
JP5124103B2 (ja) * 2006-05-16 2013-01-23 株式会社日立製作所 計算機システム
US7613876B2 (en) * 2006-06-08 2009-11-03 Bitmicro Networks, Inc. Hybrid multi-tiered caching storage system
JP4452261B2 (ja) * 2006-09-12 2010-04-21 株式会社日立製作所 ストレージシステムの論理ボリューム管理方法、論理ボリューム管理プログラム、及びストレージシステム
KR100818797B1 (ko) * 2006-10-19 2008-04-01 삼성전자주식회사 메모리 용량 조절 방법과 메모리 용량 조절 장치
JP2008171103A (ja) * 2007-01-10 2008-07-24 Seiko Epson Corp 半導体記憶装置管理システム、半導体記憶装置、半導体記憶装置管理システムの制御方法およびプログラム
US20080172519A1 (en) * 2007-01-11 2008-07-17 Sandisk Il Ltd. Methods For Supporting Readydrive And Readyboost Accelerators In A Single Flash-Memory Storage Device
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US20090172248A1 (en) * 2007-12-27 2009-07-02 Guangqing You Management of a flash memory device
JP5075761B2 (ja) 2008-05-14 2012-11-21 株式会社日立製作所 フラッシュメモリを用いたストレージ装置
US8214580B2 (en) * 2009-10-23 2012-07-03 International Business Machines Corporation Solid state drive with adjustable drive life and capacity

Also Published As

Publication number Publication date
US8806170B2 (en) 2014-08-12
US20090287878A1 (en) 2009-11-19
JP2009301525A (ja) 2009-12-24
US8275965B2 (en) 2012-09-25
US8429372B2 (en) 2013-04-23
US20130238845A1 (en) 2013-09-12
US20120221783A1 (en) 2012-08-30

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