JP5053931B2 - Semiconductor device and manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device in which a semiconductor chip mounted on a substrate is sealed with a sealing resin. In particular, the present invention relates to a technique for removing bubbles present in a sealing resin around a semiconductor chip.

  In recent years, with the thinning and miniaturization of electronic devices, there is a great need for lightening and thinning the semiconductor devices constituting the electronic devices. One example of a semiconductor device mounting method for realizing these requirements is COB (Chip on Board).

  Generally, a COB type semiconductor device has a semiconductor chip mounted and fixed on a substrate on which a wiring pattern is formed, and the semiconductor chip and the wiring pattern are bonded and connected by a gold wire or the like, and the semiconductor chip and the gold wire are covered. The structure is sealed and protected with resin.

  As a method for forming the sealing resin, a method is adopted in which an epoxy resin or the like is applied onto a semiconductor chip using a dispenser method or a printing method, and then the resin is cured.

  In a state where the sealing resin is applied onto the semiconductor chip using a dispenser method or a printing method, various bubbles are present in the sealing resin.

  Among such bubbles, there are small bubbles contained in the resin in the first place, but relatively large bubbles are formed around the side surface of the semiconductor chip by the resin application process such as the dispenser method and the printing method. It is known that. In particular, it is often seen that large bubbles are formed near the center of each side of the chip.

  Patent Document 1 and Patent Document 2 disclose methods for removing bubbles around the semiconductor chip.

  According to Patent Document 1, a technique is disclosed in which air bubbles are removed from the back surface of a substrate by the action of gravity by providing a through hole (through hole) in the vicinity of the periphery of the semiconductor chip.

According to Patent Document 1 and Patent Document 2, air bubbles are removed from the back surface of the substrate by suctioning the resin by providing a through hole (through hole) in the substrate in the vicinity of the periphery of the semiconductor chip. This technique is disclosed.
JP-A-4-171969 JP-A-8-335594

  However, all of the above prior arts are techniques for removing bubbles using through holes penetrating the front and back of the substrate. For this reason, the bubble passage leads to the back surface of the substrate, and the splashes of the resin generated at the time of defoaming when the bubbles are repelled and disappear adhere to the back surface of the substrate and the device on the back surface side of the substrate that supports the substrate.

  In addition, a method of positively discharging the resin through the back surface of the substrate is also disclosed. In this case, however, the resin adheres to the back surface of the substrate and the device on the back surface side of the substrate that supports the substrate.

  In the case where the resin adheres to the back surface of the substrate, there is a problem that in the form having the terminals on the back surface of the substrate, the terminals become dirty and the yield is lowered. In various general-purpose semiconductor manufacturing apparatuses, since the back surface of the substrate is often used as a processing standard, if the resin adheres to the back surface of the substrate, the processing accuracy cannot be obtained and the same yield reduction occurs.

  Furthermore, when the resin adheres to the device on the back side of the substrate that supports the substrate, the new substrate transported next is contaminated with the resin, causing a similar problem of yield reduction. Further, in order to prevent this, it is possible to clean the apparatus one by one, but there is a possibility that the operating rate is extremely lowered.

  In addition, the bubbles around the side surface of the semiconductor chip may be removed using a known vacuum defoaming method, but large bubbles on the side surface of the semiconductor chip are often generated relatively inside the sealing resin. It tends to remain in the sealing resin. The reason may be that the moving distance from the inside of the sealing resin to the surface through which the bubbles escape is long, and that the larger the bubbles, the greater the resistance received during movement in the resin, and therefore the moving speed of the bubbles is slowed. Further, when the sealing resin has a high viscosity, bubbles remaining in the sealing resin are likely to be generated.

  When bubbles are generated in the sealing resin, when the resin is heated and cured after application of the resin, low molecular components in the sealing resin are vaporized in the bubbles and an opening is generated on the surface of the sealing resin. However, there is a problem that the yield is lowered due to exposure of the chip and the gold wire.

  In view of the above-described problems, in the present invention, a semiconductor device and a manufacturing method capable of removing bubbles present around a semiconductor chip of a sealing resin for sealing a semiconductor chip without reducing yield and operating rate The purpose is to provide.

In order to solve the above problems, a method for manufacturing a semiconductor device of the present invention includes:
A method for manufacturing a semiconductor device, comprising: a substrate; a semiconductor chip mounted on one surface of the substrate; and a sealing resin for sealing the semiconductor chip,
The substrate having a hole in which an opening on the semiconductor chip mounting region side disposed outside the mounting region of the semiconductor chip mounted on the surface and an opening outside the opening communicate with each other inside the substrate is prepared. Process,
Fixing the semiconductor chip inside the opening on the mounting region side of the semiconductor chip;
Applying a resin on the semiconductor chip, sealing the semiconductor chip with the resin, and applying a sealing resin to cover the opening of the hole on the semiconductor chip side;
After the sealing resin application step, the step of removing the bubbles in the sealing resin through the space of the hole by decompressing the entire periphery of the semiconductor device;
Curing the sealing resin;
It is characterized by having.

The semiconductor device of the present invention is
A semiconductor device having a substrate, a semiconductor chip mounted on one surface of the substrate, and a sealing resin for sealing the semiconductor chip,
The surface is outside the end portion of the semiconductor chip and covered with the sealing resin, and outside the first region and is not covered with the sealing resin. A semiconductor device, wherein the first region and the second region each have an opening communicating with the inside of the substrate.
It is characterized by having.

  With the semiconductor device of the present invention, it becomes possible to remove bubbles in the sealing resin of the semiconductor chip without contaminating the substrate backside or the device supporting the substrate on the backside of the substrate, thereby improving yield and operating rate. It has become possible.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

(First embodiment)
FIG. 1 is a plan view and a sectional view of a semiconductor device showing a first embodiment of the present invention.

  1A includes a substrate 101, a semiconductor chip 102 mounted on one surface of the substrate 101, and a metal wire 103 that connects the semiconductor chip 102 and a wiring 104 formed on the substrate surface. And a sealing resin 105 for sealing the semiconductor chip. The surface of the substrate 101 on which the semiconductor chip is mounted has at least two openings 107. FIG. 1B is a sectional view of FIG. 1A and shows an example of the substrate 101. The substrate 101 is a glass epoxy substrate as a printed wiring board and has a hole 106. The hole 106 passes through the inside of the substrate from the opening 107 on the surface on the chip mounting side and communicates with another opening 107 on the same surface. Therefore, the hole 106 is not a hole penetrating the front and back of the substrate 101.

As the substrate 101, a printed wiring board having a hole 106 having an opening 107 on one surface is used. Further, a printed wiring board and an insulating layer arranged in a pattern on the printed wiring board can be used as the substrate 101. In the latter substrate, the patterned insulating layer has a through hole corresponding to the opening of the printed wiring board. As the printed wiring board, a paper epoxy board, a glass epoxy board, a composite board in which a paper epoxy board and a glass epoxy board are combined, an alumina board, and the like can be used. The configuration in which the two openings 107 on the surface of the substrate communicate with each other inside the substrate can be created even with a single-layer substrate such as a single-sided substrate or a double-sided substrate, but can be easily created especially by using a multilayer substrate. FIG. 1C shows another example of the substrate 101. The substrate 101 has a glass epoxy substrate as a printed wiring board and an insulating layer formed on the glass epoxy substrate. The insulating layer 109 is formed of an inorganic insulating layer made of, for example, SiO ₂ or an organic insulating layer such as a solder resist. In the substrate 101 in FIG. 1C, an insulating layer 109 is patterned to form an opening 107. The formation of the opening 107 by the solder resist is performed by forming a solder resist on the surface of the printed wiring board 110 and then patterning the printed wiring board 110 directly using a photomask or a printing mask having a desired pattern. A printing method or the like is used.

  The semiconductor chip 102 can be applied without particular limitation to various discrete semiconductors such as diodes and transistors, ICs such as memory elements, LSIs, and the like. In addition, the present invention is a very effective technique because it can prevent light from being scattered by bubbles even in a semiconductor device using a light-emitting element such as an LED or a semiconductor chip having a semiconductor element such as a light-receiving element and a transparent resin. .

  The sealing resin 105 is required to have a low viscosity for the purpose of reliably sealing the semiconductor chip 102 and the metal wire 103. On the other hand, the sealing resin 105 is required to prevent the resin from getting wet over a certain area. Therefore, as the sealing resin 105, a resin having a viscosity of 10 to 400 Pa · s and a thixotropy of about 1.0 to 5.0 is used. By using such a resin, the sealing resin has a generally dome shape as shown in FIG. Note that a convex portion may be provided on the substrate 101 in order to suppress the spread of the sealing resin 105.

  Such a semiconductor device differs from the prior art in that the structure for removing bubbles is not a hole penetrating the front and back of the substrate, but a hole 106 having openings 107 at both ends on the surface on the chip mounting side of the substrate. Is the point that is formed. That is, the two openings 107 on the surface of the substrate on the chip mounting side communicate with each other inside the substrate 101.

  In order to explain in more detail, a first area (A in the drawing) that is an area of the substrate surface outside the end of the semiconductor chip and covered with the sealing resin, outside the first area, and The region not covered with the sealing resin is defined as a second region (B in the figure). The substrate 101 has an opening 107 in each of the first region and the second region defined as described above, and each opening 107 communicates inside the substrate. Therefore, in the substrate 101, the openings at both ends of the hole are arranged on the surface of the substrate on the semiconductor chip mounting side. In the first region on the substrate surface, it is sufficient that at least one opening 107 is arranged corresponding to each side of the semiconductor chip. Since bubbles frequently occur in the vicinity of the center of each side of the semiconductor chip, in the substrate of the semiconductor device of FIG. 1, the opening 107 in the first region is arranged at a position corresponding to the center of each side of the semiconductor chip. Has been.

  Thereby, one end of the opening 107 of the hole 106 is located under the sealing resin and in the vicinity of the semiconductor chip. That is, one end of the opening of the hole 106 can be positioned in the vicinity of the bubble generated in the sealing resin application step. Further, since the other end of the opening of the hole 106 is located outside the sealing resin, the inside of the hole 106 is also depressurized in the process of removing the bubbles by depressurizing the periphery of the semiconductor device described later, Bubbles can be reliably removed with a small conductance path. Specifically, the bubbles generated in the periphery of the semiconductor chip in the sealing resin are eliminated at the position indicated by part C in FIG. Since the bubbles are removed by a small conductance path, for example, when bubbles in the sealing resin are generated near the surface side away from the hole side, the bubbles are eliminated on the surface side as usual.

  Therefore, the problem is that bubbles remaining in the sealing resin after vacuum degassing are heated and expanded to expose semiconductor chips and metal wires, contamination of the backside of the substrate due to through holes in the substrate, and contamination of equipment. It is possible to prevent.

  It can also be said that the hole 106 has an exhaust function for the purpose of removing bubbles in the sealing resin. In order to obtain an exhaust function, it is only necessary that a space be created so that the air is exhausted through a hole as a path through which the gas inside the bubble passes when the periphery of the semiconductor device is decompressed. Further, it is necessary to form a space without filling the inside of the hole 106 with the resin through the opening 107 of the substrate when the sealing resin is applied in order to obtain an exhaust function. .

  In order to form the space, a shape that can sufficiently maintain the surface tension with respect to the resin to be used is required. As a shape for obtaining the surface tension, it is preferable that the diameter of the opening on the substrate surface is 0.1 mm or more and 0.5 mm or less. By setting it to 0.1 mm or more, an exhaust path can be secured, and by setting it to 0.5 mm or less, it is possible to prevent the resin from being filled when the resin is applied, and to maintain the space. is there.

  The shape of the opening 107 arranged in the first region of the substrate may be circular, elliptical, or rectangular. The same applies to the shape of the opening arranged in the second region of the substrate, and there is no particular limitation. The same applies to the cross-sectional shape of the hole inside the substrate. The path of the hole includes a straight line shape or a curved line shape, and may pass under the semiconductor chip. In the cross section of the opening of the hole, the shape of the corner on the substrate surface side of the hole is preferably not the R plane but a C plane, a right angle or an acute angle.

  In FIG. 1B, the part indicated by d indicates the distance from the end of the semiconductor chip to the hole. If the distance d is too large, there is a high possibility that bubbles generated near the semiconductor chip remain. On the other hand, if the portion d is made too small, the distance between the semiconductor chip and the atmospheric region becomes small, leading to a decrease in reliability. In view of the above balance, the distance d is preferably 0.2 mm or greater and 2.0 mm or less, and more preferably 0.5 mm or greater and 1.0 mm or less.

  FIG. 2 is a plan view showing a form of a recess different from FIG.

  FIG. 2 shows a semiconductor device in which a plurality of holes 106 are provided in the substrate for each side of the semiconductor chip 102.

  In consideration of the fact that air bubbles are frequently generated at the center of each side of the semiconductor chip, the opening 107 of the hole 106 is removed if it has one opening at the center of each side as shown in FIG. The possibility is high, and the yield can be improved. However, by providing a plurality of holes 106 as shown in FIG. 2, bubbles generated outside the vicinity of the center of each side of the semiconductor chip 102 can be removed, so that the yield can be further improved. In addition, when a plurality of holes 106 are provided, by arranging a plurality of openings 107 in parallel with each side, bubbles generated outside the vicinity of the center of each side of the semiconductor chip 102 can be removed, so that the yield can be further improved. . Note that the substrate may have a plurality of openings in the first region, for example, one opening in the second region, and a hole in which each opening is connected inside the substrate.

  Next, the manufacturing method of the present invention having the following steps (a) to (e) will be described in detail with reference to FIGS.

  Step (a) is a step of preparing a substrate 101 for mounting the semiconductor chip 102 on the surface. The surface of the substrate 101 on which the semiconductor chip is mounted has a hole in which two openings on the surface of the substrate communicate with each other inside the substrate outside the end of the mounting region to which the semiconductor chip 102 is fixed. One opening is arranged on the semiconductor chip mounting region side, and the other opening is arranged outside the one opening (see FIGS. 1A and 1B).

  Step (b) is a step of fixing the semiconductor chip 102 on the mounting region that is inside the opening of the hole of the substrate 101. Further, the semiconductor chip 102 and the wiring 104 of the substrate 101 are electrically connected. First, the semiconductor chip 102 is fixed to the semiconductor chip mounting region inside the opening 107 of the substrate 101 using an adhesive 108 such as an epoxy resin (see FIG. 1B). Thereafter, the metal wire 103 such as a gold wire is used to electrically connect the terminal on the semiconductor chip 102 and the wiring 104 on the substrate (see FIG. 1A). As a connection method, a known wire bonding method or the like can be used.

  Step (c) is a step of applying a sealing resin 105 that covers the semiconductor chip 102 and part of the substrate surface. First, as shown in FIG. 3A, a resin 302 is supplied from a dispenser 301 onto a semiconductor chip. Then, as shown in FIG. 3B, the semiconductor chip 102 is sealed with resin, and at the same time, coating is performed so as to cover the opening on the semiconductor chip side of the hole opening. Further, a state is shown in which bubbles 303 are generated around the semiconductor chip. As a resin application method, a dispensing method using a needle or a printing method can be used. The area outside the edge of the semiconductor chip on the substrate surface and covered with the sealing resin is the first area of the substrate, the area outside the first area and not covered with the sealing resin Is the second region of the substrate.

  In the step (d), after the sealing resin application step, the entire periphery of the semiconductor device in which the sealing resin 105 is applied to the semiconductor chip 102 mounted on the substrate 101 is decompressed, so that the sealing resin in the peripheral portion of the semiconductor chip It is a step of removing bubbles inside. After application of the sealing resin 105, the periphery of the semiconductor device formed in steps (a) to (c) is decompressed by a pump or the like. As shown in FIG. 3C, since the space inside the hole is also decompressed by this decompression, the bubbles around the semiconductor chip expand because the gas inside expands. And as shown in FIG.3 (d), a bubble reaches | attains the opening 107, and a bubble is defoamed as shown in FIG.3 (e). The gas inside the bubble is exhausted through the hole 106. That is, bubbles are removed from the surface of the substrate on which the semiconductor chip is mounted through the hole 106 from the sealing resin 105. Note that the bubbles remaining in the vicinity of the opening 107 expand when the periphery of the semiconductor device is depressurized and move to the opening side of the hole 106 due to a difference in atmospheric pressure. Therefore, the hole 106 is effectively used for removing the bubble. Function. It is also a suitable method to heat at a temperature that does not start the curing of the sealing resin 105 during the decompression step. By heating the sealing resin 105, the viscosity of the sealing resin 105 can be reduced, and the resistance when bubbles move can be reduced. As a result, it is possible to increase the bubble removal capability.

  In addition, the hole 106 forming the space at the start of the decompression process becomes wet with the resin due to the scattering of the resin accompanying the defoaming when the decompression is performed, and a part of the hole 106 starts from that. It may be filled with resin. In the curing process, the hole 106 may be filled with the resin due to a temporary decrease in the viscosity of the sealing resin 105. However, in the present invention, if a space is created so that the gas inside the bubbles is exhausted through the recess when the periphery of the semiconductor device is decompressed, the semiconductor device has an exhaust function. Therefore, even if the holes are filled with resin after the bubbles are removed, it is considered that the shape of the holes 106 belongs to the technical scope of the present invention when it is estimated that the holes 106 have an exhaust function.

  Step (e) is a step of curing the sealing resin 105. After the decompression step is completed, the sealing resin 105 is cured to complete the semiconductor device of the present invention.

(Second embodiment)
FIG. 4 is a plan view and a cross-sectional view of a semiconductor device showing a second embodiment of the present invention.

  FIG. 4A is a plan view of the semiconductor device of this embodiment. This embodiment is different from the first embodiment in that a hole opening has a recess in the vicinity of the semiconductor chip 102 as a structure for removing bubbles. In addition, since the other structure is the same as that of what is shown in FIG. 1, the same code | symbol is attached | subjected to the same member and description is abbreviate | omitted.

  In order to explain in more detail, a first surface (G in the figure) that is an area covered with a sealing resin on the substrate surface, outside the end of the semiconductor chip, and outside the first area, And the area | region which is not covered with sealing resin is defined as a 2nd area | region (H in a figure). The substrate has an opening in each of the first region and the second region defined as described above, and each opening communicates with the inside of the substrate. Therefore, in the substrate 101, the openings at both ends of the hole are arranged on the surface of the substrate on the semiconductor chip mounting side. Further, a recess 408 is disposed around the semiconductor chip mounting region, and the recess 408 is connected to the opening 107 in the first region.

  Although the effect of providing the holes has been described in the first embodiment, the periphery of the semiconductor chip is surrounded in a wider range by further providing the recesses.

  As a result, in the method of providing holes on the front and back as in the prior art, there was a problem that bubbles generated in the area where no holes existed, but this occurred because there were recesses in almost the vicinity of the semiconductor chip. It is possible to remove the air bubbles, which is more preferable.

  5A and 5B are a plan view and a cross-sectional view showing a form of a recess different from that in FIG.

  In the semiconductor device shown in FIG. 5, a recess 508 is provided on the surface of the substrate 501 so as to surround the entire circumference of the semiconductor chip 102. In the form of the semiconductor device of FIG. 5, since the concave portion is provided in the portion surrounding the entire circumference in the vicinity of the semiconductor chip, it is possible to cope with bubbles generated anywhere in the periphery of the semiconductor chip 102, which is more preferable. .

  Therefore, in this embodiment, in addition to the effect of preventing the contamination of the back surface of the substrate due to the scattering of the resin during defoaming and the contamination of the device supporting the substrate, a structure capable of removing bubbles generated around the semiconductor chip is provided. It becomes possible to provide.

  It can be said that the hole 106 and the recess 408 or 508 have an exhaust function for removing bubbles in the sealing resin as a whole. Further, it can be said that the hole 106 has an exhaust function for the purpose of removing bubbles in the sealing resin, and the recesses 408 and 508 have a function of leading the gas degassed from the sealing resin to the hole 106. I can say that. In order to obtain the derivation function, it is only necessary to create a space so that the gas inside the bubble is exhausted through the recess and the hole when the periphery of the semiconductor device is decompressed. When the sealing resin is applied, the formation of a space without filling the hole and the concave portion with the resin is a preferable mode for obtaining the exhaust function between the hole and the concave portion.

  Therefore, the width and shape of the recess are determined for the same reason as in the first embodiment. That is, the width of the recess is preferably 0.1 mm or more and 0.5 mm or less.

  The shape of the recesses 408 and 508 is not particularly limited, but it is preferable that the recess is a groove as the shape that is most easily processed and the surface tension is likely to work. As the groove of the recess, any of a square groove, a U groove, a V groove and the like can be selected. In the cross section of the groove, the shape of the corner on the substrate surface side of the groove is preferably a C surface, a right angle or an acute angle instead of the R surface.

  In FIG. 4B, the part indicated by d2 indicates the distance from the end of the semiconductor chip to the recess. If the distance d2 is too large, there is a high possibility that bubbles generated near the semiconductor chip remain. On the other hand, if the portion d2 is made too small, the distance between the semiconductor chip and the atmospheric region becomes small, leading to a decrease in reliability. From the above balance, the distance d2 is preferably 0.2 mm or more and 2.0 mm or less, more preferably 0.5 mm or more and 1.0 mm or less.

  6 and 7 are plan views showing the form of the recesses different from those in FIG. In the figure, only the structure of the semiconductor chip and the holes and recesses around the semiconductor chip is illustrated.

  FIG. 6 shows a semiconductor device in which the recesses 608 are provided twice.

  Although FIG. 4 shows a case where the concave portion is single, a plurality of concave portions 608 can be provided as shown in FIG. The recess 608 is connected to the hole 106. By providing a plurality of recesses 608, bubbles generated in a wider area around the semiconductor chip can be removed, so that the yield can be further improved.

  FIG. 7 shows a semiconductor device having a convex portion 709 in a concave portion 708. In FIG. 7, the plurality of island-shaped convex portions 709 are illustrated, but the shape and the number of the convex portions 709 are not particularly limited. Therefore, in order to remove bubbles, the groove width of the recess 708 needs to be within the above-mentioned range. With such a configuration, a space is formed without filling the concave portion with the resin in the coating step, and it becomes possible to remove bubbles.

  Next, the manufacturing method of the present invention having the following steps (a) to (e) will be described in detail with reference to FIGS.

  Step (a) is a step of preparing a substrate 401 for mounting the semiconductor chip 102 on the surface. The surface of the substrate 401 on which the semiconductor chip is mounted has a hole in which two openings on the substrate surface communicate with each other inside the substrate outside the end of the mounting area on which the semiconductor chip is mounted. One opening is arranged on the semiconductor chip mounting region side, and the other opening is arranged outside one opening. Further, a recess is disposed around the semiconductor chip mounting region, and the recess is connected to the opening of the first region (see FIGS. 4A and 4B).

  Step (b) is a step of fixing the semiconductor chip 102 on the mounting region of the substrate 401. Furthermore, the semiconductor chip 102 and the wiring 104 of the substrate 401 are electrically connected to each other, which is the same as in the first embodiment.

  Step (c) is a step of applying a sealing resin that covers part of the semiconductor chip 102 and the substrate surface. This process is shown in FIG. 3A and FIG. 3B. The difference from the first embodiment is that the first region covered with the sealing resin as shown in FIG. 4A. G includes a recess 408 connected to the hole.

  In the step (d), after the sealing resin application step, the entire periphery of the semiconductor device in which the sealing resin 105 is applied to the semiconductor chip 102 mounted on the substrate 401 is decompressed, so that the sealing resin around the semiconductor chip is obtained. It is a step of removing bubbles inside. This process is shown in FIG. 3C to FIG. 3E. The difference from the first embodiment is that the bubbles around the semiconductor chip are reduced in the first embodiment shown in FIG. It moves to the recessed part 408 in an area | region, It is a point that it is defoamed when it reaches | attains a recessed part.

  Step (e) is a step of curing the sealing resin 105 and is the same as in the first embodiment.

  As described above, the semiconductor device capable of removing the bubbles in the sealing resin has been described. However, the present invention is not limited to the above embodiment as long as the characteristics of the present invention are not impaired.

1 is a schematic view of a semiconductor device according to a first embodiment of the present invention. FIG. 2 is a schematic diagram showing a form of a semiconductor device different from FIG. 1. It is the schematic explaining the manufacturing method of the semiconductor device of this invention. It is the schematic of the semiconductor device of 2nd embodiment of this invention. FIG. 5 is a schematic diagram showing a form of a semiconductor device different from FIG. 4. FIG. 5 is a schematic diagram showing a form of a semiconductor device different from FIG. 4. FIG. 5 is a schematic diagram showing a form of a semiconductor device different from FIG. 4.

Explanation of symbols

101, 401, 501 Substrate 102 Semiconductor chip 103 Metal wire 104 Wiring 105 Sealing resin 106 Hole 107 Opening 108 Adhesive 109 Insulating layer 110 Printed wiring board 408, 508, 608, 708 Concave part 709 Convex part

Claims (12)

A substrate,
A semiconductor chip mounted on one surface of the substrate;
A method of manufacturing a semiconductor device having a sealing resin for sealing the semiconductor chip,
The substrate having a hole in which an opening on the semiconductor chip mounting region side disposed outside the mounting region of the semiconductor chip mounted on the surface and an opening outside the opening communicate with each other inside the substrate is prepared. Process,
Fixing the semiconductor chip inside the opening on the mounting region side of the semiconductor chip;
Applying a resin on the semiconductor chip, sealing the semiconductor chip with the resin, and applying a sealing resin to cover the opening of the hole on the semiconductor chip side;
After the sealing resin application step, the step of removing the bubbles in the sealing resin through the space of the hole by decompressing the entire periphery of the semiconductor device;
Curing the sealing resin;
A method for manufacturing a semiconductor device, comprising:   2. The method of manufacturing a semiconductor device according to claim 1, wherein the substrate has at least one opening on the semiconductor chip mounting region side for each side of the semiconductor chip to be mounted.   3. The method of manufacturing a semiconductor device according to claim 1, wherein a diameter of the opening on the semiconductor chip mounting region side is 0.1 mm or more and 0.5 mm or less.   The distance from the edge part of the said semiconductor chip to the said opening by the side of the said semiconductor chip mounting area is 0.2 mm or more and 2.0 mm or less, The semiconductor as described in any one of Claim 1 thru | or 3 characterized by the above-mentioned. Device manufacturing method.   The said board | substrate has a printed wiring board and the insulating layer arrange | positioned on the said printed wiring board, and the said insulating layer has a through-hole corresponding to the said opening. A method for manufacturing a semiconductor device according to one item.   The surface has a recess in an area covered with the sealing resin outside the mounting area of the semiconductor chip, and is connected to the opening on the semiconductor chip mounting area side. Item 14. A method for manufacturing a semiconductor device according to Item 1.   The method of manufacturing a semiconductor device according to claim 6, wherein the recess surrounds the entire circumference of the semiconductor chip mounting region.   The method of manufacturing a semiconductor device according to claim 6, wherein the concave portion is a groove. In the bubble removal step,
The method for manufacturing a semiconductor device according to claim 1, wherein the sealing resin is heated. A substrate,
A semiconductor chip mounted on one surface of the substrate;
A semiconductor device having a sealing resin for sealing the semiconductor chip,
The surface is outside the end portion of the semiconductor chip and covered with the sealing resin, and outside the first region and is not covered with the sealing resin. A semiconductor device, wherein the first region and the second region each have an opening communicating with the inside of the substrate.   The semiconductor device according to claim 1, wherein the hole has an exhaust function.   The semiconductor device according to claim 10, further comprising a recess in the first region, wherein the recess is connected to the opening in the first region.

Images