JP5042363B2 - Cdte/cds薄膜太陽電池における非整流バック接点の形成方法 - Google Patents
Cdte/cds薄膜太陽電池における非整流バック接点の形成方法 Download PDFInfo
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- JP5042363B2 JP5042363B2 JP2010514259A JP2010514259A JP5042363B2 JP 5042363 B2 JP5042363 B2 JP 5042363B2 JP 2010514259 A JP2010514259 A JP 2010514259A JP 2010514259 A JP2010514259 A JP 2010514259A JP 5042363 B2 JP5042363 B2 JP 5042363B2
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- 238000000034 method Methods 0.000 title claims description 41
- 239000010409 thin film Substances 0.000 title claims description 20
- 229910004613 CdTe Inorganic materials 0.000 claims description 60
- 238000000151 deposition Methods 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 20
- 238000004544 sputter deposition Methods 0.000 claims description 15
- 230000008021 deposition Effects 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 6
- 238000003486 chemical etching Methods 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000002207 thermal evaporation Methods 0.000 claims description 3
- 238000004070 electrodeposition Methods 0.000 claims description 2
- 239000010949 copper Substances 0.000 description 75
- 239000010408 film Substances 0.000 description 46
- 239000000463 material Substances 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 9
- 239000011521 glass Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000000859 sublimation Methods 0.000 description 4
- 230000008022 sublimation Effects 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000011031 large-scale manufacturing process Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000005329 float glass Substances 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- GSJBKPNSLRKRNR-UHFFFAOYSA-N $l^{2}-stannanylidenetin Chemical compound [Sn].[Sn] GSJBKPNSLRKRNR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000003709 fluoroalkyl group Chemical group 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000009396 hybridization Methods 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000011833 salt mixture Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010671 solid-state reaction Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000013112 stability test Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Description
ZnxCd1−xS/CdTeyS1−y
(式中、0≦x≦0.2及び0.95≦y≦1)
に含まれるすべての塩混合物を含む用語であることは、理解されるべきである。
a.有機残留物(油脂、溶媒その他)及び微粒子(1μmを超えるサイズの粉塵)のいかなる痕跡も除去するようにガラスを洗浄するステップ。
b.ガラス上にスパッタリングすることにより前方の透明な接点を堆積するステップであって、前記接点は2層を含むステップ:第1層は導電性を保証するITO(インジウム−スズ酸化物)であり、第2層は、次のステップで析出されるはずの層中における不純物の可能な拡散に対する緩衝層又はバリアとして作用するZnOである。両層は、全体として、可視波長領域中で85%以上の透過率を保証しなければならない。
c.Ar+5%CHF3環境下で反応性スパッタリング(RF−マグネトロン)により、接合部の第1部分をなすn型半導体であるCdS膜を堆積するステップ。
d.CSS(近接昇華)により、接合部の第2の部分をなすp型半導体であり、可視光の完全な吸収を保証するCdTe膜を堆積する。
e.これより前に調製された集合体全体を400℃で熱処理するステップ:CdTe膜表面をAr+フレオン雰囲気中で、5分以内の間露出させてから、温度を400℃にさらに5分間保ち、真空条件を確立して、第1の部分で生成した可能性のある揮発性化合物を、このようにしてCdTe膜表面から再蒸発させる。
f.スパッタリングにより本発明による2層(第1層はAs2Te3、第2層はCu)を含むバック接点を堆積させるステップ:このようにして形成されたバック接点上に、次にMo膜が堆積されて適当なシートの抵抗が確保される。
Claims (16)
- p型半導体CdTe薄膜上に非整流オーミック接点を形成する方法であって、
a)大気温度と200℃との間に含まれる基板温度で、該CdTe層上にAs2Te3層を堆積させるステップ;
b)該As2Te3層上にCu層を堆積させるステップ;
c)少なくとも堆積された該Cu層を150°と250℃との間に含まれる温度にするステップ
を含むことを特徴とする上記方法。 - 堆積された前記Cu層の厚さが20nm以下である、請求項1に記載の方法。
- 前記Cu層の堆積が、150と250℃との間に含まれる温度で実施される、請求項1又は2に記載の方法。
- 前記Cu層の堆積が100℃未満の温度で実施され、次に層の集合体が150°と250℃との間に含まれる温度にされる、請求項1又は2に記載の方法。
- 前記150°と250℃との間に含まれる温度における加熱が、Ar雰囲気下で且つ100mbarと1atmとの間に含まれる圧力下で実施される、請求項4に記載の方法。
- 前記層の集合体が、150°と250℃との間に含まれる温度に少なくとも1分間保たれる、請求項4又は5に記載の方法。
- 堆積した前記As2Te3層の厚さが100と300nmとの間に含まれる、請求項1から6までのいずれか一項に記載の方法。
- 前記接点が、CdTe/CdS薄膜太陽電池のバック接点である、請求項1から7までのいずれか一項に記載の方法。
- いかなる化学エッチング処理にもかけられていないCdTe層上に、前記As2Te3層が堆積される、請求項1から8までのいずれか一項に記載の方法。
- Mo層が前記Cu層上に析出される、請求項1から9までのいずれか一項に記載の方法。
- 前記As2Te3、Cu及びMoの層が、スパッタリングにより堆積される、請求項1から10までのいずれか一項に記載の方法。
- 前記As2Te3、Cu及びMoの層が、熱蒸発、電子銃蒸発、電着により堆積される、請求項1から10までのいずれか一項に記載の方法。
- 前記オーム接点が、1≦X≦1.4であるCuxTeにより形成される、請求項1から12までのいずれか一項に記載の方法。
- 透明な基板、該基板上に堆積した導電性酸化物層、n型CdS半導体層、p型CdTe半導体層、少なくともCu含有バック接点を含む多層構造により形成されるCdTe/CdS薄膜太陽電池であって、該CdTe半導体層上に堆積したAs2Te3層及び該As2Te3中に形成された1≦X≦1.4であるCuxTe層をさらに含むことを特徴とする上記太陽電池。
- 析出した前記Cu層の厚さが20nm以下である、請求項14に記載の太陽電池。
- 析出した前記As2Te3層の厚さが100と300nmとの間に含まれる、請求項14又は15に記載の太陽電池。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/IT2007/000469 WO2009001389A1 (en) | 2007-06-28 | 2007-06-28 | Method for the formation of a non-rectifying back-contact in a cdte /cds thin film solar cell |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010531547A JP2010531547A (ja) | 2010-09-24 |
JP5042363B2 true JP5042363B2 (ja) | 2012-10-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2010514259A Expired - Fee Related JP5042363B2 (ja) | 2007-06-28 | 2007-06-28 | Cdte/cds薄膜太陽電池における非整流バック接点の形成方法 |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP2171760A1 (ja) |
JP (1) | JP5042363B2 (ja) |
CN (1) | CN101816073B (ja) |
AU (1) | AU2007355717A1 (ja) |
CA (1) | CA2691506A1 (ja) |
WO (1) | WO2009001389A1 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1396166B1 (it) * | 2009-10-13 | 2012-11-16 | Arendi S P A | Metodo di attivazione di film sottili di cdte per applicazioni in celle solari a film sottili del tipo cdte/cds. |
DE102010004996B4 (de) * | 2010-01-19 | 2014-03-06 | Institut Für Photonische Technologien E.V. | Verfahren zur Herstellung einer Cadmiumtellurid-Solarzelle |
US20110265874A1 (en) * | 2010-04-29 | 2011-11-03 | Primestar Solar, Inc. | Cadmium sulfide layers for use in cadmium telluride based thin film photovoltaic devices and methods of their manufacture |
KR20130100907A (ko) * | 2010-04-30 | 2013-09-12 | 다우 글로벌 테크놀로지스 엘엘씨 | 칼코게나이드계 태양광발전 셀의 제조 방법 |
JP5508966B2 (ja) * | 2010-07-07 | 2014-06-04 | 株式会社豊田中央研究所 | 光電変換素子 |
US9461186B2 (en) * | 2010-07-15 | 2016-10-04 | First Solar, Inc. | Back contact for a photovoltaic module |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4650921A (en) * | 1985-10-24 | 1987-03-17 | Atlantic Richfield Company | Thin film cadmium telluride solar cell |
US5557146A (en) * | 1993-07-14 | 1996-09-17 | University Of South Florida | Ohmic contact using binder paste with semiconductor material dispersed therein |
CN1055792C (zh) * | 1995-07-20 | 2000-08-23 | 四川联合大学 | 具有过渡层的碲化镉太阳电池 |
DE19703615A1 (de) * | 1997-01-31 | 1998-08-06 | Siemens Ag | Optoelektronisches Halbleiterbauelement |
JP2003530702A (ja) * | 2000-04-06 | 2003-10-14 | アクゾ ノーベル ナムローゼ フェンノートシャップ | 光起電性箔を作る方法 |
AU2002349822B2 (en) | 2001-10-05 | 2007-11-15 | Solar Systems & Equipments S.R.L. | A process for large-scale production of CdTe/CdS thin film solar cells |
ITLU20050002A1 (it) * | 2005-02-08 | 2006-08-09 | Solar Systems & Equipments Srl | UN NUOVO PROCESSO PER IL TRATTAMENTO IN AMBIENTE DI CLORO DELLE CELLE SOLARI A FILM SOTTILI DI CdTe/CdS senza l'uso di CdC12. |
-
2007
- 2007-06-28 JP JP2010514259A patent/JP5042363B2/ja not_active Expired - Fee Related
- 2007-06-28 CA CA2691506A patent/CA2691506A1/en not_active Abandoned
- 2007-06-28 EP EP07805681A patent/EP2171760A1/en not_active Withdrawn
- 2007-06-28 WO PCT/IT2007/000469 patent/WO2009001389A1/en active Application Filing
- 2007-06-28 CN CN2007801000524A patent/CN101816073B/zh not_active Expired - Fee Related
- 2007-06-28 AU AU2007355717A patent/AU2007355717A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN101816073B (zh) | 2012-02-01 |
CN101816073A (zh) | 2010-08-25 |
AU2007355717A1 (en) | 2008-12-31 |
CA2691506A1 (en) | 2008-12-31 |
WO2009001389A1 (en) | 2008-12-31 |
EP2171760A1 (en) | 2010-04-07 |
JP2010531547A (ja) | 2010-09-24 |
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