JP5040119B2 - 耐環境部材、半導体製造装置及び耐環境部材の製造方法 - Google Patents

耐環境部材、半導体製造装置及び耐環境部材の製造方法 Download PDF

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Publication number
JP5040119B2
JP5040119B2 JP2006045490A JP2006045490A JP5040119B2 JP 5040119 B2 JP5040119 B2 JP 5040119B2 JP 2006045490 A JP2006045490 A JP 2006045490A JP 2006045490 A JP2006045490 A JP 2006045490A JP 5040119 B2 JP5040119 B2 JP 5040119B2
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Japan
Prior art keywords
gas
substrate
intermediate layer
atmosphere
source gas
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Expired - Fee Related
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JP2006045490A
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English (en)
Japanese (ja)
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JP2007224348A (ja
JP2007224348A5 (enExample
Inventor
明威 田村
和也 土橋
輝幸 林
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2006045490A priority Critical patent/JP5040119B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to US11/663,182 priority patent/US20090194233A1/en
Priority to PCT/JP2006/312653 priority patent/WO2006137541A1/ja
Priority to CN2006800007108A priority patent/CN101010448B/zh
Priority to KR1020077015352A priority patent/KR100915722B1/ko
Publication of JP2007224348A publication Critical patent/JP2007224348A/ja
Publication of JP2007224348A5 publication Critical patent/JP2007224348A5/ja
Priority to US13/163,305 priority patent/US20110244693A1/en
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Publication of JP5040119B2 publication Critical patent/JP5040119B2/ja
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  • Coating By Spraying Or Casting (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Drying Of Semiconductors (AREA)
JP2006045490A 2005-06-23 2006-02-22 耐環境部材、半導体製造装置及び耐環境部材の製造方法 Expired - Fee Related JP5040119B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006045490A JP5040119B2 (ja) 2006-02-22 2006-02-22 耐環境部材、半導体製造装置及び耐環境部材の製造方法
PCT/JP2006/312653 WO2006137541A1 (ja) 2005-06-23 2006-06-23 半導体処理装置用の構成部材及びその製造方法
CN2006800007108A CN101010448B (zh) 2005-06-23 2006-06-23 半导体处理装置用的构成部件及其制造方法
KR1020077015352A KR100915722B1 (ko) 2005-06-23 2006-06-23 반도체 처리 장치용의 구성 부재 및 그 제조 방법, 및반도체 처리 장치
US11/663,182 US20090194233A1 (en) 2005-06-23 2006-06-23 Component for semicondutor processing apparatus and manufacturing method thereof
US13/163,305 US20110244693A1 (en) 2005-06-23 2011-06-17 Component for semiconductor processing apparatus and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006045490A JP5040119B2 (ja) 2006-02-22 2006-02-22 耐環境部材、半導体製造装置及び耐環境部材の製造方法

Publications (3)

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JP2007224348A JP2007224348A (ja) 2007-09-06
JP2007224348A5 JP2007224348A5 (enExample) 2008-11-27
JP5040119B2 true JP5040119B2 (ja) 2012-10-03

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JP2006045490A Expired - Fee Related JP5040119B2 (ja) 2005-06-23 2006-02-22 耐環境部材、半導体製造装置及び耐環境部材の製造方法

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Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6068849B2 (ja) * 2012-07-17 2017-01-25 東京エレクトロン株式会社 上部電極、及びプラズマ処理装置
SG11201606030UA (en) * 2014-03-03 2016-08-30 Picosun Oy Protecting an interior of a hollow body with an ald coating
WO2015132443A1 (en) 2014-03-03 2015-09-11 Picosun Oy Protecting an interior of a gas container with an ald coating
US20180061617A1 (en) * 2016-08-23 2018-03-01 Applied Materials, Inc. Method to deposit aluminum oxy-fluoride layer for fast recovery of etch amount in etch chamber
JP7122854B2 (ja) 2018-04-20 2022-08-22 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理装置用部材、またはプラズマ処理装置の製造方法およびプラズマ処理装置用部材の製造方法
JP6595671B2 (ja) * 2018-07-20 2019-10-23 ピコサン オーワイ Ａｌｄコーティングによる中空ボディ内面の保護
WO2023275958A1 (ja) * 2021-06-28 2023-01-05 株式会社日立ハイテク 内壁部材の再生方法
US20250046582A1 (en) * 2022-05-23 2025-02-06 Hitachi High-Tech Corporation Regenerating method for inner member of plasma processing apparatus

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5798016A (en) * 1994-03-08 1998-08-25 International Business Machines Corporation Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability
JPH104083A (ja) * 1996-06-17 1998-01-06 Kyocera Corp 半導体製造用耐食性部材
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
JP3510993B2 (ja) * 1999-12-10 2004-03-29 トーカロ株式会社 プラズマ処理容器内部材およびその製造方法
US6780787B2 (en) * 2002-03-21 2004-08-24 Lam Research Corporation Low contamination components for semiconductor processing apparatus and methods for making components
JP3670628B2 (ja) * 2002-06-20 2005-07-13 株式会社東芝 成膜方法、成膜装置、および半導体装置の製造方法
US7205247B2 (en) * 2003-09-30 2007-04-17 Aviza Technology, Inc. Atomic layer deposition of hafnium-based high-k dielectric

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