JP5034151B2 - Semiconductor device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a semiconductor device and a manufacturing method thereof, and more particularly to a semiconductor device suitable for application to a trench gate type MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) used for power control and the like.

As semiconductor devices for power control, there are MOS transistors such as power MOSFETs and IGBTs (Insulated Gate Bipolar Transistors). Due to recent demands for energy saving, highly efficient semiconductor devices are required. These power control semiconductor devices are required to have high efficiency by reducing the conduction loss of the element, that is, by reducing the “on resistance”. For this reason, the reduction of the on resistance by miniaturization of the cell is required. It has been planned.
In addition, by adopting the “trench gate structure” as the element structure, it has become possible to increase the channel width and realize a significant miniaturization. At present, further miniaturization by the trench gate structure has been made, and the on-resistance of the element has been greatly improved. Furthermore, a “trench contact structure” is employed in which a trench is formed in the source region and a source contact is secured on the trench sidewall.

However, high integration, which is an advantage of the trench gate structure, is the greatest advantage in terms of on-resistance, but there is a problem in that it is disadvantageous in terms of the element breakdown tolerance of “avalanche resistance”.
FIG. 11 is a cross-sectional view of a main part of a conventional semiconductor device having a contact trench. On the n ⁺ semiconductor substrate 51, an n ⁻ epitaxial semiconductor layer 52, a p base region 53, and an n ⁺ source region 54 are formed in this order, and the inner wall surface of the gate trench Tg formed in a direction perpendicular to the stacked structure. A gate insulating film 57 is provided, and a gate electrode 56 is provided so as to fill the gate trench Tg. In addition, a contact trench Tc is provided in the source region 54, and a high concentration n ⁺⁺ source region 54a is provided at the corner, and an additional p ⁺ region 55 is selected on the surface side of the base region 53 in this portion. Is formed. On the gate electrode 56 and the gate insulating film 57, an interlayer insulating film 58 is provided so as to cover them, while the source electrode 59 is in contact with the n ⁺⁺ source region 54a and the additional p ⁺ type region 55. Is provided. A drain electrode 60 is provided on the back surface side of the n ⁺ semiconductor substrate 51. This structure is disclosed in Patent Document 1, for example.

Here, the “avalanche destruction” will be briefly described as follows.
That is, when the MOSFET as illustrated in FIG. 11 is turned off, the gate G and the source S are short-circuited to set the gate G and source S voltage VGS to 0V. At this time, when VGS is equal to or lower than the threshold voltage, the channel disappears. Since the current path is interrupted, the drain current ID becomes 0 A. However, due to this current change, a load having inductance generates a back electromotive force, which is applied to the drain D. The applied electromotive force causes the diode constituted by the n ⁻ epitaxial layer 52 and the p base region 53 to be in a reverse bias state, and causes breakdown.
On the other hand, an npn bipolar transistor is parasitically formed in the MOSFET by the n ⁺ source region 54, the p base region 53, and the n ⁻ epitaxial layer 52. A parasitic resistance (base resistance RB) is generated in the p base region 53 serving as the base of the bipolar transistor. The breakdown current at the time of turn-off described above flows into the n ⁺ semiconductor substrate 51, the n ⁻ epitaxial layer 52, and the p base region 53, and the bipolar transistor is turned on. When the base resistance RB is large, the forward bias between the base and the emitter becomes large. In the cell in which the bipolar operation occurs, electron-hole pairs are generated due to heat generation, and this causes further heat generation, so that current concentrates in the cell and destruction occurs. This is so-called “avalanche destruction”.

As a conventional technique for solving such “avalanche breakdown”, as shown in FIG. 11, an additional p ⁺ region 55 in which the base concentration of a part of the base region 53 is increased is provided to reduce the base resistance of the parasitic transistor. There is technology. Further, there is a technique of suppressing the bipolar operation of the parasitic transistor by lowering the concentration of the source region 54. However, when the concentration of the source region 54 is lowered, it becomes difficult to form an ohmic contact with the source electrode 59 and the on-resistance increases. As a new problem arises, a high-concentration n ⁺⁺ source region 54a is provided on the side wall surface of the contact trench Tc of the source region 54 to make an ohmic contact with the source electrode 59.
Furthermore, since the manufacturing method of the semiconductor device of FIG. 11 is disclosed in the same Patent Document 1, it will be described.

12A to 12D are diagrams illustrating a method for manufacturing the semiconductor device having the contact trench of FIG. 11, and are manufacturing process cross-sectional views illustrated in the order of processes.
As shown in FIG. 12A, the gate insulating film 57 on the wafer surface is removed. Thereafter, in a second impurity implantation step 502a for forming the source region 54, an n-type impurity such as arsenic (As) is implanted and diffused to form the n ⁺ source region 54.
Next, as shown in FIG. 12B, an interlayer insulating film 58 is formed. After patterning and etching using a resist (not shown), the resist patterning opening is used to perform RIE (Reactive Ion Etching). A part of the interlayer insulating film 58 is removed to expose the silicon surface. After removing the resist, a high concentration n ⁺⁺ source region 54a is formed by the third impurity implantation step 502b and the diffusion step as shown in FIG.

Next, as shown in FIG. 12-4, a part of silicon is removed from the exposed silicon surface by RIE, and a p-type impurity such as boron (B) is added to the bottom of the formed contact trench Tc. Then, an additional p ⁺ region 55 which is a p-type high concentration region is formed by implanting and diffusing in the impurity implantation step.
JP, 2003-101019, A FIG. 1, FIG.

However, according to the conventional manufacturing method illustrated in FIGS. 12A to 12D, the n ⁺⁺ source region 54a is formed by ion implantation and diffusion from the silicon surface before the contact trench Tc is formed. Therefore, as shown in Figure 13, when the deep diffusion depth of n ⁺⁺ source region 54a even (indicated by dotted lines only n ⁺⁺ source region 54a in the left in the figure), location where the impurity concentration of the high concentration Is only near the upper part of the contact trench Tc. For this reason, the portion that makes good ohmic contact with the source electrode 59 is on the side surface of the n ⁺⁺ source region 54a, near the upper portion, and it is difficult to form the ohmic contact at the lower portion. The 11 conventional structures have their limitations.
An object of the present invention is to provide a semiconductor device and a method for manufacturing the same that can solve the above-described problems and can further reduce the on-resistance as compared with the conventional structure.

In order to achieve the above object, a first conductive type semiconductor layer, a second conductive type semiconductor region formed near the surface of the semiconductor layer, and a second conductive type semiconductor region are provided. A first conductive type semiconductor region, a first trench extending from the first conductive type semiconductor region through the second conductive type semiconductor region to the first conductive type semiconductor layer, and the first conductive type A second trench extending from the first semiconductor region to the second conductivity type semiconductor region, an insulating layer provided on an inner wall of the first trench, and a first filling the inner space of the insulating layer in the first trench. A conductor and an electrode filling the inner space of the second trench and connected to a side surface of the first conductivity type semiconductor region, wherein the first conductivity type semiconductor region is connected to the electrode; In the first high concentration of the first conductivity type impurity is high In a semiconductor device having a degree region, the first impurity concentration distribution of the high-concentration region is constant on the side toward the depth direction of the second trenches, is and depth from the first conductivity type semiconductor region surface a configuration is from half the depth of the previous SL second trench to 2/3.

The width of the opening of the second trench may be wider than the width of the bottom surface.
Further, it is preferable that the width of the surface on the side surface in the depth direction of the second trench is larger than the width on the surface above the first high concentration region.
Further, it is preferable that the surface layer of the second conductivity type semiconductor region in contact with the bottom surface of the second trench has a second high concentration region where the concentration of the second conductivity type impurity is high.
The first high concentration region may be separated from the second conductivity type semiconductor region.
In the method for manufacturing the semiconductor device,
Forming a first conductive type semiconductor layer, a second conductive type semiconductor region, and a first conductive type semiconductor region in this order;
Forming a first trench extending from the first conductivity type semiconductor region through the second conductivity type semiconductor region to reach the first conductivity type semiconductor layer;
Forming an insulating layer on the inner wall surface of the first trench;
Filling the inside of the insulating layer of the first trench with a conductor;
Forming a second trench that reaches the second conductivity type semiconductor region from a surface separated from the first trench in the first conductivity type semiconductor region;
After obliquely implanting ions of the first conductivity type into the range of the sidewall of the second trench that is 1/2 to 2/3 of the depth of the second trench from the surface of the semiconductor region of the first conductivity type. The first high concentration is constant at a side surface that is away from the second conductive type semiconductor region and is higher in concentration than the first conductive type semiconductor region and that faces the depth direction of the second trench. Forming a concentration region;
Filling the second trench with a conductor and connecting an electrode to a side surface of the first high concentration region and the exposed semiconductor region of the second conductivity type;
It is set as the manufacturing method provided with.

  The manufacturing method may further include a step of forming a second high concentration region by introducing a second conductivity type impurity into the exposed surface of the second conductivity type semiconductor region.

According to the present invention, the impurity concentration at the side surface of the first high concentration region (n ⁺⁺ source region 4a) is constant at a high concentration in the depth direction of the trench. A good ohmic contact can be obtained in a wide range with the electrode in contact (source electrode), and the on-resistance can be reduced.
Further, by tapering the second trench, it is possible to prevent a void from being formed in the electrode, and to reduce the on-resistance.

  Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a cross-sectional view of a main part of a semiconductor device according to a first embodiment of the present invention. This figure shows a trench gate type n-channel MOSFET. The difference between conventional MOSFET is, n ⁺ in high concentration n ⁺⁺ source regions 4a formed on the surface portion of the contact portion between the source electrode 9 of the source region 4, n ⁺⁺ in contact with the side walls of the contact trenches Tc As shown in FIG. 2, the source region 4a is different in that there is a constant region at a high concentration from the surface of the n ⁻ epitaxial semiconductor layer 2 in the depth direction (Y direction).
The overall structure of the MOSFET in FIG. 1 will be described as follows. That is, on the n ⁺ semiconductor substrate 1 made of an n ⁺ drain layer, n ^- a drift layer n ^- epitaxial semiconductor layer 2, p base region 3, n ⁺ source region 4 is formed in this order. A gate insulating film 7 is provided on the inner wall surface of the gate trench Tg formed in a direction perpendicular to the laminated structure, and a gate electrode 6 is provided so as to fill the gate trench Tg. The p base region 3 is formed in the surface layer of the n ⁻ epitaxial semiconductor layer 2.

Further, in the source region 4, a contact trench Tc that is selectively removed between the gate trenches Tg is formed. As shown in FIG. 2, a depth direction (Y direction) is formed on the surface of the side wall of the contact trench Tc. N ⁺⁺ source region 4a having a high and high impurity concentration toward the surface), and an additional p ⁺ region 5 is selectively formed on the surface side of well region 3 which is the bottom surface portion of contact trench Tc. ing. The n ⁺⁺ source region 4a and the p base region 3 are spaced apart from each other by a predetermined distance. By making this distance longer than the diffusion length of electrons, injection of electrons from the n ⁺⁺ source region 4a to the p base region 3 via the n ⁺ source region 4 is suppressed, and parasitic bipolar operation during avalanche is suppressed. can do.
An interlayer insulating film 8 is provided on the gate electrode 6 and the gate insulating film 7 so as to cover them, while a source electrode 9 is provided so as to be in contact with the n ⁺⁺ source region 4a and the additional p ⁺ region 5. It has been. A drain electrode 10 is provided on the back surface side of the n ⁺ semiconductor substrate 1.

In the configuration described above, a part of the n ⁺ source region 4 is a high concentration n ⁺⁺ source region 4a, and the impurity concentration of the n ⁺⁺ source region 4a in contact with the side wall of the contact trench Tc is as shown in FIG. The n ⁺⁺ source region 4a in contact with the source electrode 9 has an impurity concentration by making a constant region with a high concentration from the surface of the n ⁻ epitaxial semiconductor layer 2 to the depth direction (Y direction). The concentration can be increased from the opening of the contact trench Tc to the deep region. As a result, the ohmic contact region between the source electrode 9 and the n ⁺⁺ source region 4a is widened, and the on-resistance can be reduced as compared with the conventional structure.
The n ⁺⁺ source region 4a formed in this way has a length (longitudinal length) in the depth direction (Y direction) of the trench longer than the surface length (lateral length), The cross-sectional shape of the conventional n ⁺⁺ source region 54a is different.

In this embodiment, the case where an epitaxial growth substrate in which the n ⁻ epitaxial semiconductor layer 2 is provided on the n ⁺ semiconductor substrate 1 is used as the semiconductor substrate, but an FZ (floating zone) substrate may be used. Absent. In that case, the p base region 3 is formed on one main surface of an n ⁻ semiconductor substrate (corresponding to the n ⁻ epitaxial semiconductor layer 2) which is an FZ substrate, and an n ⁺ drain region (n ⁺ semiconductor) is formed on the other main surface. Corresponding to the substrate 1).

3 to 6 are views showing a method of manufacturing a semiconductor device according to the second embodiment of the present invention, and are cross-sectional views of essential parts shown in the order of steps. This is a method of manufacturing the semiconductor device of FIG.
First, the manufacturing process up to FIG. 3 will be described.
First, an n ⁻ epitaxial semiconductor layer 2 having an impurity concentration of about 1 × 10 ¹⁶ cm ^{−3 is} grown on the main surface of n ⁺ semiconductor substrate 1 of n ⁺ silicon having a substrate concentration of 10 ²⁰ cm ⁻³ and about 10 μm. Next, an oxide film is formed on the surface of the n ⁻ epitaxial semiconductor layer 2, and a p-type impurity such as boron (B) is ion-implanted on the surface with a dose of 1 × 10 ¹³ to 1 × 10 ¹⁵ cm ⁻² . The p base region 3 is formed by diffusing.
Next, a resist mask is provided on the surface of the oxide film using a PEP (Photo-Engraving Process) technique, and dry etching is performed until the silicon surface is reached by, for example, RIE, and the resist is removed to form a gate trench mask.

Next, dry etching is performed by RIE until the n ⁻ epitaxial semiconductor layer 2 is reached, thereby forming a gate trench Tg. Next, etching damage on the inner wall surface of the gate trench Tg is removed by using CDE (Chemical Dry Etching), sacrificial oxidation, or the like, and the gate insulating film 7 is formed on the inner wall surface of the gate trench Tg and its surrounding surface.
Next, polysilicon doped with a high concentration of n-type impurities is deposited until the gate trench Tg is sufficiently filled to form the gate electrode 6.
Next, the polysilicon deposited on the surface of the wafer is etched by RIE or CDE so that the polysilicon as the gate electrode 6 is filled only in the gate trench Tg.

Next, the gate insulating film 7 on the wafer surface is removed, and then an n-type impurity such as arsenic (As) is vertically applied from the wafer surface at a dose of 1 × 10 ¹⁵ cm ⁻² in order to form the source region 4. Ions are implanted into and diffused to form the first source region 4. Next, an interlayer insulating film 8 is formed by a CVD (Chemical Vapor Deposition) method. After each patterning and CDE process using a resist (not shown), a part of the interlayer insulating film 8 is formed by RIE from this resist patterning opening. To expose the silicon surface. At this time, since the opening angle of the interlayer insulating film 8 is rounded by a process such as CDE, the coverage is improved when the source electrode is embedded in a later process. Next, the resist is peeled off, and FIG. 4 is reached.
Next, as shown in FIG. 4, a part of the n ⁺ source region 4 is removed from the exposed silicon surface by RIE, and a contact trench Tc reaching the p base region 3 is formed.

Next, as shown in FIG. 5, a p-type impurity such as boron (B) is ionized vertically from the wafer surface at a dose of 1 × 10 ¹⁵ cm ⁻² in the impurity implantation step 101 at the bottom of the contact trench Tc. Implanted and diffused, an additional p ⁺ region 5 which is a p-type high concentration region is formed.
Next, as shown in FIG. 6, an n-type impurity such as arsenic (As) is implanted into the wall surface of the contact trench Tc obliquely from the wafer surface at a dose of 5 × 10 ¹⁵ cm ⁻² in the impurity implantation step 102. Then, a high concentration n ⁺⁺ source region 4a is formed on the surface portion of the wall surface of the contact trench Tc.
At this time, the n ⁺⁺ source region 4a on the wall surface of the contact trench Tc is set to 1/2 to 2/3 of the depth of the contact trench Tc from the silicon surface. If deeper than this, the amount of electrons injected from the n ⁺⁺ source region 4a through the n ⁺ source region 4 into the p base region 3 during avalanche increases, and there is a concern that avalanche breakdown may occur due to parasitic bipolar operation.

The range of the implantation region in the impurity implantation step 102 is adjusted by the depth and width of the contact trench Tc and the angle of oblique ion implantation. When the vertical implantation angle is 90 ° and this angle is reduced (as the distance from the vertical direction increases), the range of impurities implanted into the side wall of the contact trench Tc rises upward and the implantation region becomes narrower.
As described above, since ions are implanted into the side wall of the contact trench Tc, the impurity concentration of the n ⁺⁺ source region 4a is highest on the surface in contact with the trench side wall, and decreases as it proceeds in the vertical direction (lateral direction) to the implanted surface. Become. For this reason, in the ion-implanted region, as shown in FIG. 2, the impurity concentration in the depth direction (Y direction) of the contact trench Tc is constant. In addition, since the impurity concentration of the n ⁺⁺ source region 4a in contact with the source electrode 9 is high and wide, a region where a good ohmic contact can be obtained is widened, and the on-resistance can be reduced.

In this embodiment, after the contact trench Tc is formed, the additional p ⁺ region 5 is formed and then the n ⁺⁺ source region 4a is formed. However, the n ⁺⁺ source region 4a is formed first, and then An additional p ⁺ region 5 may be formed. Finally, the source electrode 9 and the drain electrode 10 are formed, and a passivation film (not shown) is formed and patterned to complete the MOSFET shown in FIG.

7 and 8 are views showing a method of manufacturing a semiconductor device according to the third embodiment of the present invention, and are cross-sectional views of essential parts shown in the order of steps. This is another method for manufacturing the semiconductor device shown in FIG.
The steps up to patterning the interlayer insulating film 8 of FIG. 4 of the second embodiment are the same.
Next, as shown in FIG. 7, a part of the n ⁺ source region is removed from the exposed silicon surface by RIE, and the contact trench Tc is formed to the depth where the n ⁺⁺ source region 4 a is formed (p base). The n-type impurity such as arsenic (As) is ionized obliquely from the wafer surface at a dose of 5 × 10 ¹⁵ cm ⁻² in the impurity implantation step 102 on the wall surface of the contact trench Tc. Implanted and diffused, an n ⁺⁺ source region 4a is formed on the surface of the wall surface of the contact trench Tc.

In this way, the range in the depth direction of the n ⁺⁺ source region 4a can be accurately determined regardless of the ion implantation angle.
In forming the n ⁺⁺ source region 4a, an n-type impurity may be implanted by a vapor phase diffusion method using ECR (Electron Cyclotron Resonance) plasma using a dopant gas such as AsH ₃ . Thereafter, the n ⁺⁺ source region 4a can be formed by appropriately performing heat treatment for activation.
Next, as shown in FIG. 8, the contact trench Tc is further etched by RIE to a depth reaching the p base region using a mask having an opening at the bottom of the contact trench Tc. Then, an n-type impurity such as boron (B), for example, is implanted into the bottom of the contact trench Tc vertically from the wafer surface at a dose of 1 × 10 ¹⁵ cm ^{−2 in} an impurity implantation step 101, and diffused to add p ⁺ Region 5 is formed.

Finally, the source electrode 9 and the drain electrode 10 are formed, and a passivation film (not shown) is formed and patterned to complete the MOSFET shown in FIG.
In the semiconductor device of the first embodiment, as the miniaturization progresses, the aspect ratio of the contact trench Tc increases, and when the source electrode 9 is embedded, the entrance of the opening is buried first, and the source electrode A void (void) is generated in 9 and the on-resistance increases. A method for solving this will be described below.

  FIG. 9 is a sectional view showing the principal part of a semiconductor device according to the fourth embodiment of the present invention. The difference from the configuration of FIG. 1 is that the contact trench Tc is not formed vertically, but the opening width is wider than the bottom width and the contact trench Tc is formed in a tapered shape. Thereby, even when the aspect ratio of the contact trench Tc is increased by miniaturization, the conductive material for forming the source electrode 9 is satisfactorily filled, and voids (voids) are not generated in the source electrode 9. , Increase in on-resistance can be prevented.

FIG. 10 is a cross-sectional view showing the principal part of the method of manufacturing the semiconductor device according to the fifth embodiment of the present invention. This is a method of manufacturing the semiconductor device of FIG.
The steps up to patterning the interlayer insulating film 8 of FIG. 3 in the second embodiment are the same.
As shown in FIG. 10, a part of the n ⁺ source region 4 is removed from the exposed silicon surface by RIE to form a contact trench Tc in a tapered shape. In this case, the taper angle θ is preferably about 88 to 89 °. The subsequent steps are the same as those shown in FIGS.
Finally, the source electrode 9 and the drain electrode 10 are formed, and a passivation film (not shown) is formed and patterned to complete the MOSFET shown in FIG.

Sectional drawing of the principal part of the semiconductor device of 1st Example of this invention. The figure which shows the impurity concentration distribution of the Y direction of FIG. Sectional process sectional view of a semiconductor device according to a second embodiment of the present invention. FIG. 3 is a cross-sectional view of main steps of the semiconductor device according to the second embodiment of the present invention continued from FIG. FIG. 4 is a cross-sectional view of the essential part of the semiconductor device according to the second embodiment of the present invention continued from FIG. FIG. 5 is a cross-sectional view of main steps of the semiconductor device according to the second embodiment of the present invention, continued from FIG. Sectional process sectional view of a semiconductor device according to a third embodiment of the present invention. FIG. 7 is a cross-sectional view of main steps of the semiconductor device according to the third embodiment of the present invention, continued from FIG. Sectional drawing of the principal part of the semiconductor device of 4th Example of this invention. Sectional process sectional view of the semiconductor device according to the fifth embodiment of the present invention. Cross-sectional view of the main part of a conventional semiconductor device having a contact trench FIG. 11 is a fragmentary process cross-sectional view illustrating the manufacturing method of the semiconductor device in FIG. FIG. 12-1 is a principal process cross-sectional view illustrating the manufacturing method of the semiconductor device of FIG. FIG. 12B is a principal process cross-sectional view illustrating the manufacturing method of the semiconductor device of FIG. FIG. 12-3 is a fragmentary process cross-sectional view illustrating the manufacturing method of the semiconductor device of FIG. The figure which shows the impurity concentration distribution of the Y direction of FIG.

Explanation of symbols

1 n ⁺ semiconductor substrate 2 n ^- epitaxial semiconductor layer 3 p base region 4 n ⁺ source region 4 a n ⁺⁺ source region 5 additional p ⁺ region 6 gate electrode 7 gate insulating film 8 interlayer insulating film 9 source electrode 10 drain electrode Tg gate Trench Tc Contact trench

Claims (7)

A first conductivity type semiconductor layer; a second conductivity type semiconductor region formed near a surface of the semiconductor layer; and a first conductivity type semiconductor region provided on the second conductivity type semiconductor region; A first trench extending from the first conductivity type semiconductor region through the second conductivity type semiconductor region to the first conductivity type semiconductor layer, and from the first conductivity type semiconductor region to the second conductivity type. A second trench extending to the semiconductor region of the mold, an insulating layer provided on an inner wall of the first trench, a first conductor filling an inner space of the insulating layer in the first trench, and a second trench And an electrode connected to a side surface of the first conductivity type semiconductor region, wherein the first conductivity type semiconductor region has a concentration of the first conductivity type impurity at a connection portion with the electrode. For a semiconductor device having a high first high concentration region There are, the impurity concentration distribution of the first high-concentration region is constant on the side toward the depth direction of the second trench, and a depth from the first conductivity type semiconductor region surface before Symbol of the second trench A semiconductor device having a depth of 1/2 to 2/3. The semiconductor device according to claim 1, wherein the width of the opening of the second trench is wider than the width of the bottom surface. 3. The semiconductor device according to claim 1, wherein a width of a surface on a side surface in a depth direction of the second trench is larger than a width of a surface above the first high concentration region. 4. The device according to claim 1, further comprising a second high concentration region having a high concentration of the second conductivity type impurity in a surface layer of the second conductivity type semiconductor region in contact with a bottom surface of the second trench. The semiconductor device according to one item. The semiconductor device according to claim 1, wherein the first high concentration region is separated from the second conductivity type semiconductor region. Forming a first conductive type semiconductor layer, a second conductive type semiconductor region, and a first conductive type semiconductor region in this order;
Forming a first trench extending from the first conductivity type semiconductor region through the second conductivity type semiconductor region to reach the first conductivity type semiconductor layer;
Forming an insulating layer on the inner wall surface of the first trench;
Filling the inside of the insulating layer of the first trench with a conductor;
Forming a second trench that reaches the second conductivity type semiconductor region from a surface separated from the first trench in the first conductivity type semiconductor region;
After obliquely implanting ions of the first conductivity type into the range of the sidewall of the second trench that is 1/2 to 2/3 of the depth of the second trench from the surface of the semiconductor region of the first conductivity type. The first high concentration is constant at a side surface that is away from the second conductive type semiconductor region and is higher in concentration than the first conductive type semiconductor region and that faces the depth direction of the second trench. Forming a concentration region;
Filling the second trench with a conductor and connecting an electrode to a side surface of the first high concentration region and the exposed semiconductor region of the second conductivity type;
A method for manufacturing a semiconductor device, comprising: The semiconductor device according to claim 6, further comprising a step of introducing a second conductivity type impurity into the exposed surface of the second conductivity type semiconductor region to form a second high concentration region. Manufacturing method.

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