JP5033737B2 - Semiconductor device manufacturing method and semiconductor manufacturing apparatus - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device formed by dividing a semiconductor element region formed on a substrate, and more particularly to a method for manufacturing a semiconductor device for separating semiconductor devices using an etching technique, and a semiconductor manufacturing device. .

  Conventionally, a dicing method is well known as a technique for separating a plurality of semiconductor devices formed on a semiconductor wafer into individual semiconductor devices (chips). Since the dicing method uses a dicing blade to cut, chipping that would cause the end of the semiconductor device to chip due to impact at that time is likely to occur. To prevent this, a width wider than the actual cut width is cut. I was trying. For example, Patent Document 1 discloses an LED array chip used for an exposure apparatus (LED head) of an image forming apparatus that uses electrophotographic technology such as a printer.

JP-A-8-32110

  However, since the technique using the above-described dicing method requires a relatively large area between the semiconductor devices, the number of semiconductor devices that can be taken out from one semiconductor wafer is limited. There was a problem that.

  SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a method of manufacturing a semiconductor device that can increase the number of semiconductor devices that can be manufactured from a substrate such as a semiconductor wafer, and can prevent damage when using dicing or the like. And

In order to solve the above-described technical problem, a semiconductor device manufacturing method according to the present invention is a semiconductor device manufacturing method in which a substrate on which a semiconductor element region is formed is divided to manufacture a plurality of semiconductor devices. against the dividing regions is subjected to anisotropic etching from the surface of the substrate toward the rear surface, a first etching step of forming a thin opening than the thickness of said substrate, said surface and said of said substrate A step of covering a side surface of the opening with a thin film to form a non-etched region, and a support for preventing the plurality of semiconductor devices after the substrate is divided from being separated from the back surface of the substrate and attaching the body, the first etching step, after the step of attaching the process and the support to form a non-etched region is completed, to the substrate, of the opening Subjected to isotropic etching toward the surface to the back surface of the substrate, characterized in that it comprises a second etching step of dividing the substrate, and a step of removing the plurality of semiconductor devices from the support.

Furthermore, another semiconductor device manufacturing method of the present invention is a semiconductor device manufacturing method for manufacturing a plurality of semiconductor devices by dividing a substrate on which a semiconductor element region is formed. A first etching step in which anisotropic etching is performed from the front surface to the back surface of the substrate to form an opening thinner than the thickness of the substrate; and the front surface of the substrate and the side surface of the opening Then, after the step of covering the thin film and forming the non-etching region, and the step of forming the first etching step and the non-etching region are completed, the substrate is exposed to the substrate from the bottom surface of the opening. subjected to isotropic etching toward the rear surface, and a second etching step of forming a thin opening than the thickness of the substrate, after the second etching process is completed, the group Against the surface, and attaching a support to prevent the said after dividing the substrate a plurality of semiconductor devices are discrete, after the step of attaching the support is complete, said back surface of said substrate The method includes polishing the region etched in the second etching step and dividing the substrate, and removing the plurality of semiconductor devices from the support.

According to another aspect of the present invention, there is provided a method for manufacturing a semiconductor device, comprising: dividing a substrate on which a semiconductor element region is formed to manufacture a plurality of semiconductor devices; Te, anisotropically etched from the surface of the substrate toward the rear surface, a first etching step of forming a thin opening than the thickness of the substrate, relative to the surface and a side surface of the opening portion of the substrate Then, after the step of covering the thin film and forming the non-etching region, and the first etching step and the step of forming the non-etching region are completed, the substrate is opened from the bottom of the opening to the substrate. The substrate is divided with respect to the surface of the substrate, and a second etching step in which isotropic etching is performed toward the back surface of the substrate to form an opening thinner than the thickness of the substrate. A step of said plurality of semiconductor devices attach the support to prevent the discrete, against the periphery of the dividing region of the back surface of the substrate, a step of thin film coating, to form the non-etched regions, non-etching A third etching step of dividing the substrate by subjecting the back surface of the substrate to isotropic etching from the back surface of the substrate toward the surface of the substrate after the step of forming the region is completed ; Removing a plurality of semiconductor devices from the support.

Still another semiconductor device manufacturing method of the present invention is a semiconductor device manufacturing method for manufacturing a plurality of semiconductor devices by dividing a substrate on which a semiconductor element region is formed. A first etching step in which anisotropic etching is performed from the front surface to the back surface of the substrate to form an opening thinner than the thickness of the substrate; and after the substrate is divided with respect to the front surface of the substrate a step of said plurality of semiconductor devices attach the support to prevent the discrete, against the periphery of the dividing region of the back surface of the substrate, a step of thin film coating, to form a non-etching region, said first first etching step, after the step of forming a step and the non-etched region attaching the support is completed, the divided regions for the backside of the substrate, the back surface of the substrate A second etching step in which isotropic etching is performed toward the surface of the substrate to form an opening thinner than the thickness of the substrate, and the surface excluding the back surface of the substrate and the bottom surface of the opening After the step of covering the thin film and forming the non-etching region and the step of forming the non-etching region are completed, the anisotropic processing is performed from the bottom surface of the opening toward the surface of the substrate with respect to the back surface of the substrate. And a third etching step of dividing the substrate, and a step of removing the plurality of semiconductor devices from the support.

  Still another semiconductor device manufacturing method of the present invention is a semiconductor device manufacturing method in which a first substrate on which a semiconductor element region is formed is divided into a plurality of semiconductor devices. Each semiconductor device is dispersed on the back surface of the first substrate, a first etching step of etching a partial region, a step of covering a non-etched region including a part of a side surface of the region to be divided with a thin film, and a back surface of the first substrate A step of providing a support for preventing the film, a second etching step of performing a second etching using the opening formed in the thin film as an etching window, and a depth in the middle of the etching in the second etching step. A third etching step for etching from the substrate to the back surface of the substrate is included.

  According to the present invention, the occurrence of chipping can be surely suppressed by using the required etching instead of the conventional dicing method as the dividing method between apparatuses. Therefore, the marginal area of the semiconductor device in anticipation of chipping can be reduced, and the ratio of the area in which the semiconductor device can be formed out of the area required for the manufacturing process is increased, thereby increasing the number of products that can be manufactured. Can do.

  Further, according to the method for manufacturing a semiconductor device of the present invention, the semiconductor element region can be reliably separated for each semiconductor device by combining the division of the substrate with etching, and the cutting width is narrower than that of the dicing method or the like. Since the etching can be controlled and damage to the mechanical substrate is reduced, it is extremely effective particularly when the element is miniaturized.

  A preferred embodiment of a method for manufacturing a semiconductor device of the present invention will be described with reference to the drawings.

[First embodiment]
The present embodiment is a method for manufacturing a semiconductor device using a silicon substrate, and is particularly advantageous when a large number of semiconductor light emitting elements such as LED heads are formed at once.

  First, in the present embodiment, as shown in FIG. 2, the rectangular semiconductor devices 20 are formed in a layout so as to be arranged vertically and horizontally. Each of these rectangular semiconductor element regions 20 is formed on a silicon substrate, which is a semiconductor wafer, and a region between these rectangular semiconductor element regions 20 is deleted in order to separate the devices. In the present embodiment, it is a band-like region extended in a lattice shape.

  For example, an electrode layer, an active layer, or the like is formed on the semiconductor element region 20 formed on the silicon substrate 11 and a necessary device formation is completed. Then, as shown in FIG. Is divided. First, the entire surface including the deletion region 16 to be deleted is covered with the mask material layer 12 on the silicon substrate 11. The deletion region 16 has a window formed so that the surface of the semiconductor wafer to be deleted is exposed, and the mask material is, for example, one or a combination of organic material, silicon oxide, silicon nitride, and metal material. Materials can be used. Here, it is desirable that the mask material layer 12 be finally left as a device film.

Next, the silicon substrate 11 is etched by first dry etching from the surface 24 of the deletion region 16 to a certain depth 23. The etching depth 23 at this time is, for example, 5 μm or more. The etching depth can be appropriately reduced as long as it does not affect the device. Further, it is desirable that the etching cross-sectional shape be as long as possible in the etching direction (anisotropic etching in which the etching region does not widen in the horizontal direction). In this dry etching, RF dry etching using SF ₆ and O ₂ gas as an etching gas can be applied.

  The mask material layer 12 is provided again so that the region to be the deletion region 16 is exposed, that is, the bottom surface is formed at the depth 23 of the etching region 15 and the surface portion 12a and the etching side surface 12b are covered.

  Subsequently, as shown in FIG. 3, the wafer 17 is fixed to the fixing frame 19 by using an adhesive sheet 18 as a support. This is to prevent the semiconductor devices from being separated after the next second dry etching step.

After supporting the fixing frame 19, the second dry etching is performed again. In the second dry etching, isotropic dry etching can be applied to increase the etching rate in the depth direction. When the substrate 11 is thin, for example, when the substrate thickness is 50 μm or less, the same etching as the first etching step (anisotropic etching) may be repeated. In the second dry etching (isotropic etching), RF dry etching using SF ₆ + O ₂ as an etching gas can be applied. Here, etching is performed so that the etching side wall portion 14 has, for example, a cross-sectional shape and a substantially dome shape as shown in FIG. At the bottom, the adhesive sheet 18 bonded first is exposed.

  Due to this second etching process, the etching region end 22 on the bottom surface of the wafer is wider on the device side than the etching region end 21 in the first dry etching step. That is, the element regions are separated only by the width of anisotropic etching capable of microfabrication, and the semiconductor device may be disposed close to other adjacent semiconductor elements in the layout. Sufficient division is realized.

  After the second dry etching is completed, a form in which each device chip 26 as a semiconductor device is fixed on the adhesive sheet 18 as shown in FIG. 4 is obtained. After that, each chip 26 is removed from the pressure-sensitive adhesive sheet 18 to be fine individual chips.

  According to the first embodiment of the present invention, after the element formation portion of the semiconductor device is manufactured, the etching process is a combination of isotropic dry etching and anisotropic dry etching. Position accuracy is obtained, and since it is not based on dicing, the finish of the removal end portion is free from chipping and other defects, and mechanical damage is prevented from affecting the device. In addition, since isotropic etching having a high speed is used for etching, the removal region is formed at a high speed and can be applied to a thick substrate. Further, since a cutting method such as dicing is not used, contamination of the semiconductor device is prevented.

[Second Embodiment]
FIG. 5 schematically shows a cross section of the region from which the removal region has been removed by the manufacturing method according to the second embodiment, and is a cross section before separation for each apparatus. A mask material layer 32 is formed on the surface of the silicon substrate 31, and an opening 35 having a narrow width is formed from the surface 44 to a depth 43 by the mask material layer 32, as in the first embodiment. A sidewall protective film 32 a is formed on the sidewall of the opening 35 so as to be continuous with the surface portion 32 b of the mask material layer 32.

  As will be described later, a dome-shaped void 36 removed by isotropic etching is formed in the region below the narrow-width opening 35, and the side wall 36 w of the void 36 is larger than the width of the opening 35. The shape is also largely removed.

  In order to obtain such a structure, the following steps shown in FIGS. 6 to 8 are performed in the method of manufacturing a semiconductor device of this embodiment. First, as shown in FIG. 6, a predetermined region of the opening 35 is etched from the surface 44 to a depth 43 by anisotropic dry etching. The method described in the first embodiment can be applied to the anisotropic dry etching.

  Next, it etches to the depth 47 by isotropic dry etching. The depth 47 is shallower than the thickness (back surface 48) of the silicon substrate 31, and etching is stopped to the extent that the front surface and the back surface do not penetrate. The method described in the first embodiment can be applied to the isotropic dry etching. By this isotropic etching, a gap portion 36 is formed so as to be deeper than the depth 46 extended as it is at the position of the opening portion 35, and has a shape that is wider than the opening portion 35 in the horizontal direction.

  Next, as shown in FIG. 7, a chip fixing sheet 37 is attached to the front surface side, and the silicon substrate 31 is polished from the back surface 48 side. The amount to be polished is such that the etched void 36 appears. By this polishing from the back surface of the substrate, the gap portion 36 that has been expanded in the horizontal direction by the previous etching is exposed, and its end portion 49 is advanced from the position 41 of the width of the opening portion 35 to the element side. .

  Then, as shown in FIG. 8, the adhesive sheet 39 for fixation is stuck on the back surface, and the sheet 37 on the front surface is peeled off. The chip may be peeled directly from the sheet 37 without replacing the adhesive sheet 39 for fixing the chip.

  In the second embodiment, the wafer back surface 48 is polished after the second dry etching, and the gap portion 36 that is an etching region is exposed from the back surface. Therefore, even when the substrate 31 is thick, The semiconductor device can be separated into individual semiconductor devices without requiring an equivalent etching amount. For this reason, it is possible to shorten the etching time, and it is possible to reduce the spread of the gap portion in the lateral direction more than necessary and improve the dimensional reproducibility.

[Third embodiment]
9 and 10 are process cross-sectional views for explaining a semiconductor device manufacturing method according to the third embodiment of the present invention. First, as shown in FIG. 9, after forming a mask material layer 52 on the silicon substrate 51 so as to expose the removal region 56, anisotropic dry etching is performed from the surface 54 to the depth 53 to form the removal region 56. An opening 55 is formed at a corresponding position. By this anisotropic dry etching, a substantially vertical side wall is formed at the end portion 57 of the opening 55.

  Next, as shown in FIG. 10, a second mask material layer 60 is also formed on the back surface of the substrate, and an etching opening 60a is formed on the back surface side of the wafer in the removed region 56, which is a region to be etched. After such an etching opening 60a is formed in the second mask material layer 60, a chip fixing sheet 59 is provided on the substrate surface. After the semiconductor devices are adhered so as not to be scattered by the chip fixing sheet 59, isotropic dry etching is performed from the back surface of the wafer through the etching opening 60a to form the void 56. The etching depth can be a depth that reaches the bottom 53 of the first dry etching, and by such isotropic etching, a position 58 that extends horizontally from the end position 57 of the opening 55 is obtained. The gap 56 can be widened.

  In the third embodiment implemented in such a process, since the second dry etching is performed from the back side of the substrate, it is possible to reduce the influence of the etching amount in the horizontal direction on the removal region of the wafer surface. The element can be manufactured with good dimensional reproducibility.

[Fourth Embodiment]
11 and 12 are views showing a method of manufacturing the semiconductor device of the fourth embodiment. Similarly to the previous embodiment, after forming the mask material layer 62 on the silicon substrate 61 to open the removal region 66, anisotropic dry etching is performed from the surface 64 to the depth 63 to correspond to the removal region 66. An opening 65 is formed at the position. After the completion of the first dry etching, an etching mask material layer 69 is formed on the back surface of the substrate, the support 68 is bonded to the surface of the substrate, and then the second dry etching is performed from the back surface of the substrate. The second dry etching can be isotropic dry etching. Here, in this second etching step, the etching depth can be up to the middle of the substrate 61. If this reaches the opening 65, it will be scattered for each semiconductor device, or the relative position of the semiconductor device (chip) will be shifted and this will hinder subsequent processing at the wafer level. To come. Further, by this isotropic etching, the gap 66 can be expanded to a position 67b that extends in the horizontal direction from the end position 67a of the opening 65. Here, the position 67 b indicates the opening end of the silicon substrate 61 in contact with the mask material layer 69.

  Next, the etching side surface of the opening 65 on the substrate surface is covered with an etching mask, and a chip fixing sheet 70 is provided on the back surface of the substrate. Next, third dry etching is performed from the wafer surface. The third dry etching can be anisotropic dry etching, and can be formed in a self-aligned manner using an etching mask that covers the etching side surface of the opening 65.

  According to the fourth embodiment, since dry etching is performed from both the front surface and the back surface of the substrate, the influence on the device region due to the spread of etching in the horizontal direction can be further prevented.

[Fifth Embodiment]
13 to 16 are process cross-sectional views illustrating the steps of the semiconductor device manufacturing method according to the fifth embodiment. As shown in FIG. 13, in the semiconductor device of this embodiment, a mask material layer 72 is formed on the surface of a silicon substrate 71 having an adhesive sheet 76 as a support bonded to the back surface. Through the portion 75, anisotropic etching, isotropic etching, and isotropic etching as the third etching are performed again under different conditions, and a gap 77 having a shape that spreads in two stages is formed. With this configuration, the amount of etching in the horizontal direction can be increased so that the next isotropic etching proceeds faster than the first isotropic etching, thereby preventing the influence of the horizontal etching on the device region. However, the overall etching rate can be increased.

  Here, the manufacturing method of the fifth embodiment will be described with reference to FIGS. 14 to 16. First, as shown in FIG. 14, a mask material layer 82 is formed on the surface of the substrate 81, and the mask material layer is formed. 82 is opened by anisotropic etching to form a first opening 85. Next, the etching side surface of the first opening 85 is covered with a mask material.

Next, as shown in FIG. 15, after a chip fixing sheet 86 is provided on the back surface of the substrate 81, second dry etching is performed from the substrate surface. In the second dry etching, the gap 88 has a lateral extension as compared with the first etching, but the condition that the etching rate is slower than the general isotropic etching and the lateral extension is suppressed is applied. Is done. In this etching, for example, in a SF ₆ in the etching gas 0 ₂ mixing ratio, the greater component 0 _2. The etching depth is set in the middle of the substrate 81 to prevent separation.

Next, third dry etching is performed from the surface side of the substrate 81. In this etching, isotropic etching conditions are applied. In the third etching, the spread in the horizontal direction on the bottom surface side of the gap 87 can be allowed. As shown in FIG. 16, the horizontal extension of the third etching region is formed to be wider than the extension of the second etching region. Here, in a SF ₆ in the etching gas _{0 2} mixing ratio, the greater component SF _6.

  According to the method for manufacturing a semiconductor device of the present embodiment, the second etching is performed under etching conditions in which the etching amount in the horizontal direction is larger than the first etching but smaller than the isotropic etching, and the third etching is performed. In the etching, since isotropic etching is performed, it is possible to prevent the influence of horizontal (lateral) etching on the device region and to increase the etching rate. Note that the third etching can also be performed from the back surface of the wafer. For the etching from the back surface, the steps described in the third embodiment can be applied.

  Next, an example of an LED print head which is an example of a semiconductor device manufactured by applying the semiconductor device manufacturing method as described above will be described with reference to FIG.

FIG. 17 shows an LED print head 200 according to an embodiment based on the LED head of the present invention.
FIG. As shown in the figure, an LED unit 202 is mounted on the base member 201. The LED unit 202 is obtained by mounting a semiconductor device formed by any one of the manufacturing methods of the first to fifth embodiments on a mounting base. FIG. 18 is a plan layout view showing an example of the configuration of the LED unit 202. On the mounting substrate 202e, a plurality of the semiconductor devices described in the above-described embodiments are provided as the light emitting unit 202a along the longitudinal direction. It is arranged. On the mounting substrate 202e, electronic component mounting areas 202b and 202c in which electronic components are arranged and wirings are formed, and a connector 202d for supplying control signals and power from the outside are provided. Yes.

  Above the light emitting part of the light emitting part unit 202a, a rod lens array 203 is disposed as an optical element for condensing the light emitted from the light emitting part. The rod lens array 203 includes a large number of columnar optical lenses arranged along the linearly arranged light emitting units of the light emitting unit 202a, and is held at a predetermined position by a lens holder 204 corresponding to an optical element holder. Yes.

  As shown in FIG. 17, the lens holder 204 is formed so as to cover the base member 201 and the LED unit 202. Then, the base member 201, the LED unit 202, and the lens holder 204 are sandwiched integrally by a clamper 205 disposed through openings 201a and 204a formed in the base member 201 and the lens holder 204. Has been. Therefore, the light generated by the LED unit 202 is irradiated to a predetermined external member through the rod lens array 203.This LED print head 200 is used as an exposure device such as an electrophotographic printer or an electrophotographic copying apparatus.

  As described above, according to the LED head of this embodiment, since any one of the semiconductor devices shown in the embodiments of the above-described embodiment is used as the LED unit 202, high quality and reliability are achieved. A high LED head can be provided.

  FIG. 19 is a main part configuration diagram schematically showing a main part configuration of an image forming apparatus 300 of an embodiment based on the image forming apparatus of the present invention. As shown in FIG. 19, in the image forming apparatus 300, four process units 301 to 304 that respectively form yellow, magenta, cyan, and black color images are provided along the conveyance path 320 of the recording medium 305. They are arranged in order from the upstream side. Since the internal configurations of these process units 301 to 304 are common, the internal configuration will be described by taking, for example, a cyan process unit 303 as an example.

  In the process unit 303, a photosensitive drum 303a as an image carrier is rotatably arranged in the direction of the arrow. Electricity is supplied to the surface of the photosensitive drum 303a around the photosensitive drum 303a sequentially from the upstream side in the rotation direction. A charging device 303b for charging and an exposure device 303c for forming an electrostatic latent image by selectively irradiating light onto the surface of the charged photosensitive drum 303a are provided. Furthermore, a developing device 303d that generates a visible image by attaching toner of a predetermined color (cyan) to the surface of the photosensitive drum 303a on which the electrostatic latent image is formed, and toner remaining on the surface of the photosensitive drum 303a. A cleaning device 303e to be removed is provided. The drums or rollers used in these devices are rotated by a drive source and gears (not shown).

  In addition, the image forming apparatus 300 has a paper cassette 306 for storing a recording medium 305 such as paper stacked in a lower portion of the image forming apparatus 300, and the recording medium 305 is separated and conveyed one by one above the paper cassette 306. A hopping roller 307 is provided. Further, the recording medium 305 is sandwiched together with the pinch rollers 308 and 309 on the downstream side of the hopping roller 307 in the conveyance direction of the recording medium 305, thereby correcting the skew of the recording medium 305, and the process units 301 to 304. Registration rollers 316 and 311 are disposed. These hopping roller 307 and registration rollers 310 and 311 rotate in conjunction with a driving source and gears (not shown).

  Transfer rollers 312 made of semiconductive rubber or the like are disposed at positions facing the respective photosensitive drums of the process units 301 to 304. In order to adhere the toner on the photosensitive drums 301 a to 304 a to the recording medium 305, a predetermined potential difference is generated between the surfaces of the photosensitive drums 301 a to 304 a and the surfaces of the transfer rollers 312. ing.

  The fixing device 313 includes a heating roller and a backup roller, and fixes the toner transferred onto the recording medium 305 by pressurizing and heating. Further, the discharge rollers 314 and 315 sandwich the recording medium 305 discharged from the fixing device 313 together with the pinch rollers 316 and 317 of the discharge unit and convey the recording medium 305 to the recording medium stacker unit 318. The discharge rollers 314 and 315 are rotated in conjunction with a drive source and a gear (not shown). As the exposure apparatus 303c used here, the LED print head 200 described above is used.

  Next, the operation of such an image forming apparatus will be described. First, the recording medium 305 stored in a stacked state in the paper cassette 306 is separated and transported one by one from the top by the hopping roller 307. Subsequently, the recording medium 305 is sandwiched between the registration rollers 310 and 311 and the pinch rollers 308 and 309 and conveyed to the photosensitive drum 301 a and the transfer roller 312 of the process unit 301. Thereafter, the recording medium 305 is sandwiched between the photosensitive drum 301a and the transfer roller 312, and the toner image is transferred to the recording screen and simultaneously conveyed by the rotation of the photosensitive drum 301a.

  Similarly, the recording medium 305 sequentially passes through the process units 302 to 304, and the electrostatic latent images formed by the exposure devices 301c to 304c are developed by the developing devices 301d to 304d in the passing process. The toner images are sequentially transferred and superimposed on the recording screen. Then, after the toner images of the respective colors are superimposed on the recording surface, the recording medium 305 on which the toner image is fixed by the fixing device 313 is held between the discharge rollers 314 and 315 and the pinch rollers 316 and 317, and the image The recording medium stacker 318 outside the forming apparatus 300 is discharged. A color image is formed on the recording medium 305 through the above process.

  As described above, according to the image forming apparatus of the present embodiment, since the LED print head described in the above-described embodiment is adopted, a high-quality and highly reliable image forming apparatus can be provided. .

  In the above-described embodiment, the example in which the light emitting element (LED) is formed as the semiconductor element formed in the semiconductor element region of the semiconductor device has been described. However, the present invention is not limited to this, and the light emitting element is replaced. Thus, it is possible to adopt various modes such as forming a light receiving element or forming other semiconductor elements in addition to these optical elements.

It is a schematic diagram explaining the division | segmentation process by the etching in the manufacturing method of the semiconductor device of the 1st Embodiment of this invention. It is a top view which shows arrangement | positioning of the semiconductor device in the manufacturing method of the semiconductor device of the 1st Embodiment of this invention. It is a process top view explaining an adhesion process of a semiconductor wafer of a manufacturing method of a semiconductor device of a 1st embodiment of the present invention. It is the figure before the division | segmentation for every semiconductor device in the manufacturing method of the semiconductor device of the 1st Embodiment of this invention. It is sectional drawing before the division | segmentation for every semiconductor device in the manufacturing method of the semiconductor device of the 2nd Embodiment of this invention. It is process sectional drawing after the isotropic etching process in the manufacturing method of the semiconductor device of the 2nd Embodiment of this invention. It is process sectional drawing after the sticking process of the adhesive sheet in the manufacturing method of the semiconductor device of the 2nd Embodiment of this invention. It is process sectional drawing after the grinding | polishing process from the board | substrate back surface in the manufacturing method of the semiconductor device of the 2nd Embodiment of this invention. It is process sectional drawing for demonstrating the manufacturing method of the semiconductor device of the 3rd Example of this invention, and is process sectional drawing after a 1st etching process. It is process sectional drawing for demonstrating the manufacturing method of the semiconductor device of the 3rd Example of this invention, and is process sectional drawing after a 2nd etching process. It is process sectional drawing for demonstrating the manufacturing method of the semiconductor device of the 4th Example of this invention, and is process sectional drawing after isotropic etching. It is process sectional drawing for demonstrating the manufacturing method of the semiconductor device of the 4th Example of this invention, and is process sectional drawing after anisotropic etching. It is process sectional drawing for demonstrating the manufacturing method of the semiconductor device of the 5th Example of this invention. It is process sectional drawing for demonstrating the manufacturing method of the semiconductor device of the 5th Example of this invention, and is process sectional drawing after a 1st etching process. It is process sectional drawing for demonstrating the manufacturing method of the semiconductor device of the 5th Example of this invention, and is process sectional drawing after a 2nd etching process. It is process sectional drawing for demonstrating the manufacturing method of the semiconductor device of the 5th Example of this invention, and is process sectional drawing after a 3rd etching process. It is a schematic diagram which shows the LED print head of embodiment based on the LED head manufactured using the manufacturing method of the semiconductor device concerning this invention. It is a plane arrangement | positioning figure which shows the example of 1 structure of the LED unit manufactured using the manufacturing method of the semiconductor device concerning this invention. 1 is a main part configuration diagram schematically showing a main part configuration of an image forming apparatus according to an embodiment based on an image forming apparatus manufactured using a method for manufacturing a semiconductor device according to the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 Silicon substrate 12 Mask material layer 12b Etching side face 14 Etching side wall 15 Etching area 16 Deletion area 18 Adhesive sheet 19 Fixing frame 20 Semiconductor element area 21 Etching area edge 22 Etching area edge 23 Depth 24 Surface 26 Chip 31 Silicon substrate 32 Mask material layer 35 Opening 36w Side wall 37 Chip fixing sheet 39 Adhesive sheet 43 Depth 44 Surface 46 Depth 47 Depth 48 Back surface 49 End 51 Silicon substrate 52 Mask material layer 53 Depth 54 Front surface 55 Opening 56 Removal region 57 edge position 60 mask material layer 61 silicon substrate 62 mask material layer 63 depth 64 surface 65 opening 66 removal area 67a edge position 68 chip fixing sheet 69 mask material layer 71 silicon substrate 72 mask material layer 75 opening 76 Adhesive sheet 81 Plate 82 mask material layer 85 first opening 200 LED print head 300 image forming apparatus

Claims (10)

In a semiconductor device manufacturing method for manufacturing a plurality of semiconductor devices by dividing a substrate on which a semiconductor element region is formed,
A first etching step of performing anisotropic etching from the front surface to the back surface of the substrate to be divided on the surface of the substrate to form an opening thinner than the thickness of the substrate;
Covering the surface of the substrate and the side surface of the opening with a thin film and forming a non-etched region;
Attaching a support to the back surface of the substrate that prevents the plurality of semiconductor devices after the substrate is divided; and
After the first etching step, the step of forming the non-etching region, and the step of attaching the support are completed, isotropic etching is performed on the substrate from the bottom surface of the opening toward the back surface of the substrate. And a second etching step of dividing the substrate,
Removing the plurality of semiconductor devices from the support. A method for manufacturing a semiconductor device. In a semiconductor device manufacturing method for manufacturing a plurality of semiconductor devices by dividing a substrate on which a semiconductor element region is formed,
A first etching step of performing anisotropic etching from the front surface to the back surface of the substrate to be divided on the surface of the substrate to form an opening thinner than the thickness of the substrate;
Covering the surface of the substrate and the side surface of the opening with a thin film and forming a non-etched region;
After the first etching step and the step of forming the non-etching region are completed, the substrate is subjected to isotropic etching from the bottom surface of the opening toward the back surface of the substrate, and the thickness of the substrate A second etching step for forming a thinner opening;
Attaching a support for preventing the plurality of semiconductor devices after dividing the substrate from being separated from the surface of the substrate after the second etching step is completed;
After the step of attaching the support is completed, polishing the back surface of the substrate to the region etched by the second etching step, and dividing the substrate;
Removing the plurality of semiconductor devices from the support. A method for manufacturing a semiconductor device. In a semiconductor device manufacturing method for manufacturing a plurality of semiconductor devices by dividing a substrate on which a semiconductor element region is formed,
A first etching step of performing anisotropic etching from the front surface to the back surface of the substrate to be divided on the surface of the substrate to form an opening thinner than the thickness of the substrate;
Covering the surface of the substrate and the side surface of the opening with a thin film and forming a non-etched region;
After the first etching step and the step of forming the non-etching region are completed, the substrate is subjected to isotropic etching from the bottom surface of the opening toward the back surface of the substrate, and the thickness of the substrate A second etching step for forming a thinner opening;
Attaching a support for preventing the plurality of semiconductor devices after the substrate is divided from being separated from the surface of the substrate;
Covering the periphery of the region to be divided on the back surface of the substrate, covering the thin film and forming a non-etched region;
A third etching step of dividing the substrate by subjecting the back surface of the substrate to isotropic etching from the back surface of the substrate toward the front surface of the substrate after the step of forming the non-etched region is completed; ,
Removing the plurality of semiconductor devices from the support. A method for manufacturing a semiconductor device. In a semiconductor device manufacturing method for manufacturing a plurality of semiconductor devices by dividing a substrate on which a semiconductor element region is formed,
A first etching step of performing anisotropic etching from the front surface to the back surface of the substrate to be divided on the surface of the substrate to form an opening thinner than the thickness of the substrate;
Attaching a support for preventing the plurality of semiconductor devices after dividing the substrate from being dispersed to the surface of the substrate;
Covering the periphery of the region to be divided on the back surface of the substrate, covering the thin film and forming a non-etched region;
After the first etching step, the step of attaching the support, and the step of forming the non-etching region are completed, the rear surface of the substrate is directed from the back surface of the substrate toward the front surface of the substrate. Performing an isotropic etching to form an opening thinner than the thickness of the substrate;
Coating the thin film on the surface excluding the back surface of the substrate and the bottom surface of the opening, and forming a non-etched region;
After the step of forming the non-etched region is completed, a third etching step of dividing the substrate by subjecting the back surface of the substrate to anisotropic etching from the bottom surface of the opening toward the surface of the substrate. When,
Removing the plurality of semiconductor devices from the support. A method for manufacturing a semiconductor device. 5. The anisotropic etching performed in the first etching step is performed to a depth that does not affect the operation of the semiconductor device removed from the support. A manufacturing method of a semiconductor device given in any 1 paragraph. The isotropic etching performed in the second etching step is different from the isotropic etching performed in the third etching step, and is less spread in the width direction of the substrate than the third etching step. thing
The method of manufacturing a semiconductor device according to claim 3. The second etching step includes dry etching
The method for manufacturing a semiconductor device according to claim 1, wherein: The third etching step includes dry etching
The method for manufacturing a semiconductor device according to claim 3, wherein: The thin film contains silicon oxide, silicon nitride, or an organic material
The method for manufacturing a semiconductor device according to claim 1, wherein: In a semiconductor device manufacturing method for manufacturing a plurality of semiconductor devices by dividing a substrate on which a semiconductor element region is formed,
The process of performing the etching of any one of Claim 1, 2, 3, and 4 is included.
A semiconductor manufacturing apparatus.

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