JP5026436B2 - 結合型の圧電半導体ナノ発電機 - Google Patents
結合型の圧電半導体ナノ発電機 Download PDFInfo
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- JP5026436B2 JP5026436B2 JP2008547684A JP2008547684A JP5026436B2 JP 5026436 B2 JP5026436 B2 JP 5026436B2 JP 2008547684 A JP2008547684 A JP 2008547684A JP 2008547684 A JP2008547684 A JP 2008547684A JP 5026436 B2 JP5026436 B2 JP 5026436B2
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- 239000004065 semiconductor Substances 0.000 title claims description 64
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 24
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
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- 239000011701 zinc Substances 0.000 description 1
- RNWHGQJWIACOKP-UHFFFAOYSA-N zinc;oxygen(2-) Chemical group [O-2].[Zn+2] RNWHGQJWIACOKP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N2/00—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction
- H02N2/18—Electric machines in general using piezoelectric effect, electrostriction or magnetostriction producing electrical output from mechanical input, e.g. generators
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/304—Beam type
- H10N30/306—Cantilevers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
- Electrodes Of Semiconductors (AREA)
Description
この出願の発明に関連する先行技術文献情報としては、以下のものがある(国際出願日以降国際段階で引用された文献及び他国に国内移行した際に引用された文献を含む)。
Claims (5)
- 発電機であって、
a.第1の基板と、
b.第1の端部と、当該第1の端部に対向し、且つ前記第1の基板に隣接して配置されている第2の端部とを有する半導体圧電構造であって、当該構造は柔軟性を有し、前記第1の端部付近に力が加えられると湾曲し、それによって当該半導体圧電構造の前記第1の端部の一部における第1の側部と第2の側部との間に電位差を生じるものである、前記半導体圧電構造と、
c.前記第1の端部と通電するように配置されている第1の導電性接触子であって、前記構造の前記第1の端部の一部と当該第1の導電性接触子との間にショットキー障壁を生じさせる物質から本質的に成り、さらに前記構造に対して、当該構造が変形されると前記ショットキー障壁が順バイアスされる位置に配置されていることにより、当該第1の導電性接触子から前記第1の端部に電流が流れるものである、前記第1の導電性接触子と、
d.前記第2の端部と通電するように配置されている第2の導電性接触子と
を有し、
前記半導体圧電構造は前記第1の基板から上方へ延出する複数の半導体圧電ナノロッドを有し、前記第1の導電性接触子は第2の基板から下方へ延出する複数の導電性ナノロッドを有し、さらに、この導電性ナノロッドは、前記半導体圧電ナノロッドの各セットの前記第1の端部が当該導電性ナノロッドの各セットの第1の端部に隣接するように配置されており、これにより前記導電性ナノロッドが前記半導体圧電ナノロッドに対し横方向に振動すると、前記導電性ナノロッドの少なくとも1つが前記半導体圧電ナノロッドの少なくとも1つに接触して順バイアスショットキー障壁が形成されるものである
ことを特徴とする発電機。 - 請求項1記載の発電機において、この発電機は、さらに、
前記第1の導電性接触子および前記第2の導電性接触子の双方に電気的に連結された回路素子を有するものである。 - 請求項1記載の発電機において、前記半導体圧電構造の前記半導体圧電ナノロッドは単結晶性である。
- 請求項1記載の発電機において、前記半導体圧電構造の前記半導体圧電ナノロッドは酸化亜鉛を含むものである。
- 請求項1記載の発電機において、前記第1の導電性接触子の導電性ナノロッドは金属を含むものである。
Applications Claiming Priority (11)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US75255805P | 2005-12-20 | 2005-12-20 | |
US60/752,558 | 2005-12-20 | ||
US75963706P | 2006-01-18 | 2006-01-18 | |
US60/759,637 | 2006-01-18 | ||
US79573406P | 2006-04-28 | 2006-04-28 | |
US60/795,734 | 2006-04-28 | ||
US79644206P | 2006-05-01 | 2006-05-01 | |
US60/796,442 | 2006-05-01 | ||
US11/608,865 US8330154B2 (en) | 2005-12-20 | 2006-12-11 | Piezoelectric and semiconducting coupled nanogenerators |
US11/608,865 | 2006-12-11 | ||
PCT/US2006/061933 WO2007076254A2 (en) | 2005-12-20 | 2006-12-12 | Piezoelectric and semiconducting coupled nanogenerators |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009521203A JP2009521203A (ja) | 2009-05-28 |
JP2009521203A5 JP2009521203A5 (ja) | 2011-02-03 |
JP5026436B2 true JP5026436B2 (ja) | 2012-09-12 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008547684A Expired - Fee Related JP5026436B2 (ja) | 2005-12-20 | 2006-12-12 | 結合型の圧電半導体ナノ発電機 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8330154B2 (ja) |
EP (1) | EP1964161A4 (ja) |
JP (1) | JP5026436B2 (ja) |
WO (1) | WO2007076254A2 (ja) |
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WO2007076254A2 (en) | 2007-07-05 |
EP1964161A2 (en) | 2008-09-03 |
WO2007076254A3 (en) | 2008-04-03 |
US8330154B2 (en) | 2012-12-11 |
US20100117488A1 (en) | 2010-05-13 |
EP1964161A4 (en) | 2011-03-09 |
JP2009521203A (ja) | 2009-05-28 |
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