JP5024314B2 - Semiconductor device heat dissipation structure and electronic device including the same - Google Patents

Semiconductor device heat dissipation structure and electronic device including the same Download PDF

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JP5024314B2
JP5024314B2 JP2009051986A JP2009051986A JP5024314B2 JP 5024314 B2 JP5024314 B2 JP 5024314B2 JP 2009051986 A JP2009051986 A JP 2009051986A JP 2009051986 A JP2009051986 A JP 2009051986A JP 5024314 B2 JP5024314 B2 JP 5024314B2
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concave surface
semiconductor element
transfer member
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heat transfer
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JP2010206073A (en
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邦俊 鈴木
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Fujitsu General Ltd
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本発明は、半導体素子の放熱構造およびこれを備えた電子機器に関し、特に高周波信号を取扱う半導体素子の放熱構造に関する。   The present invention relates to a heat dissipation structure for a semiconductor element and an electronic device including the same, and more particularly to a heat dissipation structure for a semiconductor element that handles a high-frequency signal.

従来から、例えば、マイクロ波送信機として衛星通信用のVSAT(超小型地球局)などに用いられるBUC(Block Up Converter)や高周波電力増幅器などの電子機器は、MMIC(モノリシックマイクロ波集積回路)、MIC(マイクロ波集積回路)、高周波アンプなどの半導体素子が搭載されている。この半導体素子のうち、発熱量の大きいものは、発生する熱によって破壊することがないように、電子機器の金属筐体またはヒートシンクに半導体素子を直接固定し、半導体素子から発生する熱を、金属筐体またはヒートシンクへ伝熱し、金属筐体またはヒートシンクから外部へ放熱する構造になっている。   Conventionally, for example, electronic devices such as a BUC (Block Up Converter) and a high-frequency power amplifier used for satellite communication VSAT (Ultra-Small Earth Station) as a microwave transmitter are MMIC (Monolithic Microwave Integrated Circuit), Semiconductor elements such as an MIC (microwave integrated circuit) and a high frequency amplifier are mounted. Among these semiconductor elements, those that generate a large amount of heat are directly fixed to the metal casing or heat sink of the electronic device so that they are not destroyed by the generated heat. Heat is transferred to the housing or heat sink, and heat is radiated from the metal housing or heat sink to the outside.

また、上記の構造で放熱効率を改善するため、ヒートシンクと半導体素子との間に放熱シート(伝熱部材)を挟んで、両者を固定する構造が提案されている。この構造は、例えば、下部側にフランジ状の取付座を備えた半導体素子と、この半導体素子の取付座を固定する固定部を備えたヒートシンクと、取付座と固定部の間に配設される放熱シートとからなっており、上記の固定部は取付座が嵌め込まれる凹面と、この凹面の底面に形成された浅い凹部とからなり、この凹部に放熱シートが敷かれるようになっている。これによって、ヒートシンクの凹部に放熱シートを仮置きした後、放熱シートの上方からヒートシンクの凹面に半導体素子の取付座をネジ止めした構造となっている(例えば、特許文献1参照。)。   In order to improve the heat dissipation efficiency with the above structure, a structure in which a heat dissipation sheet (heat transfer member) is sandwiched between the heat sink and the semiconductor element and the both are fixed has been proposed. This structure is disposed between a mounting seat and a fixing portion, for example, a semiconductor element having a flange-shaped mounting seat on the lower side, a heat sink having a fixing portion for fixing the mounting seat of the semiconductor element. The fixing portion includes a concave surface into which the mounting seat is fitted and a shallow concave portion formed on the bottom surface of the concave surface, and the thermal radiation sheet is laid on the concave portion. Thus, after the heat dissipation sheet is temporarily placed in the recess of the heat sink, the mounting seat of the semiconductor element is screwed to the concave surface of the heat sink from above the heat dissipation sheet (see, for example, Patent Document 1).

しかしながら、特許文献1では、ヒートシンクの凹面の底面に凹部を有する2段階に凹ませた構造になっているので、放熱シートを配設するための加工が容易でないという欠点があった。特に、衛星通信用の電子機器はアルミダイキャスト製筐体からなり、加工精度、コストなどの面で2段階に凹ませる加工が難しいという欠点があった。   However, in patent document 1, since it was the structure dented in two steps which has a recessed part in the bottom face of the concave surface of a heat sink, there existed a fault that the process for arrange | positioning a thermal radiation sheet was not easy. In particular, an electronic device for satellite communication has a housing made of aluminum die-casting, and has a drawback that it is difficult to process in two steps in terms of processing accuracy and cost.

そこで、特許文献1において、放熱シートを配設するための加工を簡単にするには、例えば、ヒートシンクの凹面の底面に凹部を形成することなく、凹面の底面に放熱シートを敷くようにすれば良いが、半導体素子のネジ止め時に、放熱シートの位置を規制する手段がないため、放熱シートの位置ズレが起こる可能性が高くなってしまう。また、凹面の底面の中に放熱シートに替えて放熱グリースを塗布する方法もあるが、衛星通信用の電子機器などに用いる高周波用の半導体素子では、この半導体素子に放熱グリースが付着することにより、その高周波特性を劣化させる恐れがある。   Therefore, in Patent Document 1, in order to simplify the processing for disposing the heat dissipation sheet, for example, if the heat dissipation sheet is laid on the bottom surface of the concave surface without forming the concave portion on the bottom surface of the concave surface of the heat sink. Although there is no means for regulating the position of the heat dissipation sheet when the semiconductor element is screwed, there is a high possibility that the heat dissipation sheet will be misaligned. In addition, there is a method of applying heat-dissipating grease in place of the heat-dissipating sheet in the bottom of the concave surface. However, in high-frequency semiconductor elements used for electronic devices for satellite communications, etc. The high frequency characteristics may be deteriorated.

特開2005−183582号公報(第5頁−第6頁、第2図)Japanese Patent Laying-Open No. 2005-183582 (pages 5-6, FIG. 2)

本発明は上記問題点に鑑み、電子機器の金属筐体またはヒートシンクと、半導体素子との間に伝熱部材を挟んで両者を固定し、半導体素子の放熱を促進する構造において、簡単な構造で良好な放熱性能が得られるようにした半導体素子の放熱構造およびこれを備えた電子機器を提供することを目的とする。   In view of the above problems, the present invention has a simple structure in which a heat conduction member is sandwiched between a metal housing or heat sink of an electronic device and a semiconductor element and the heat dissipation of the semiconductor element is promoted. An object of the present invention is to provide a heat dissipation structure for a semiconductor element and an electronic device including the same, in which a good heat dissipation performance can be obtained.

本発明は上記課題を解決するため、請求項1記載の発明は、下部側にフランジ状の取付座を備えた半導体素子と、前記取付座を固定する固定部を備えた筐体と、前記取付座と前記固定部との間に配設される伝熱部材とからなる半導体素子の放熱構造において、前記固定部は前記取付座が嵌め込まれる第1凹面と、同第1凹面と交差する方向に形成された第2凹面とからなり、前記伝熱部材は前記第2凹面に配設されることを特徴とする構成となっている。   In order to solve the above-mentioned problems, the present invention provides a semiconductor device having a flange-shaped mounting seat on a lower side, a housing having a fixing portion for fixing the mounting seat, and the mounting In a heat dissipation structure of a semiconductor element comprising a heat transfer member disposed between a seat and the fixed portion, the fixed portion is in a direction intersecting the first concave surface into which the mounting seat is fitted and the first concave surface. The heat transfer member is disposed on the second concave surface. The heat transfer member is formed on the second concave surface.

請求項2記載の発明は、請求項1記載の半導体素子の放熱構造において、前記第2凹面の深さは、前記第1凹面の深さと等しくすることを特徴とする構成となっている。   According to a second aspect of the present invention, in the heat dissipation structure for a semiconductor device according to the first aspect, the depth of the second concave surface is equal to the depth of the first concave surface.

請求項3記載の発明は、請求項1または請求項2記載の半導体素子の放熱構造において、前記伝熱部材は、断面凹凸状の軟質金属箔からなることを特徴とする構成となっている。   According to a third aspect of the present invention, in the heat dissipation structure for a semiconductor element according to the first or second aspect, the heat transfer member is made of a soft metal foil having an uneven cross section.

請求項4記載の発明は、請求項1乃至請求項3のいずれかに記載の半導体素子の放熱構造において、前記伝熱部材は十字形状に形成され、前記第2凹面から前記第1凹面に渡って配設されることを特徴とする構成となっている。   According to a fourth aspect of the present invention, in the heat dissipation structure for a semiconductor element according to any one of the first to third aspects, the heat transfer member is formed in a cross shape and extends from the second concave surface to the first concave surface. It is the structure characterized by being arranged.

請求項5記載の発明は、請求項4記載の半導体素子の放熱構造において、前記取付座と前記第1凹面のそれぞれ対応する位置に前記半導体素子を前記筐体に固定するためのネジ止め部が設けられ、前記十字形状の伝熱部材は前記ネジ止め部を逃げた形状とすることを特徴とする構成になっている。   According to a fifth aspect of the present invention, in the heat dissipation structure for a semiconductor element according to the fourth aspect, there are screwing portions for fixing the semiconductor element to the housing at positions corresponding to the mounting seat and the first concave surface, respectively. The cross-shaped heat transfer member is provided so as to have a shape that escapes the screwing portion.

請求項6記載の発明は、請求項1乃至請求項5のいずれかに記載の半導体素子の放熱構造を備えた電子機器であることを特徴とする。   A sixth aspect of the present invention is an electronic device including the semiconductor element heat dissipation structure according to any one of the first to fifth aspects.

本発明によれば、簡単な構造かつ組立が容易で良好な放熱性能が得られる半導体素子の放熱構造およびこれを備えた電子機器を実現することができる。   According to the present invention, it is possible to realize a heat dissipation structure for a semiconductor element and an electronic apparatus including the same, which have a simple structure, can be easily assembled, and can obtain good heat dissipation performance.

本発明による半導体素子の放熱構造に用いられる半導体素子を示す外観図で、(A)は上面図、(B)は正面図、(C)は側面図である。It is an external view which shows the semiconductor element used for the thermal radiation structure of the semiconductor element by this invention, (A) is a top view, (B) is a front view, (C) is a side view. 本発明による半導体素子の放熱構造を備えた電子機器を示す分解斜視図である。It is a disassembled perspective view which shows the electronic device provided with the heat dissipation structure of the semiconductor element by this invention. 本発明による半導体素子の放熱構造を備えた電子機器を示す断面図で、(A)は図2の組立状態のA−A’断面図、(B)は図2の組立状態のB−B’断面図である。2A and 2B are cross-sectional views illustrating an electronic device having a heat dissipation structure for a semiconductor device according to the present invention, in which FIG. 2A is a cross-sectional view taken along the line AA ′ in FIG. 2 and FIG. It is sectional drawing. 本発明による半導体素子の放熱構造に用いられる伝熱部材のその他の実施形態を示す斜視図である。It is a perspective view which shows other embodiment of the heat-transfer member used for the thermal radiation structure of the semiconductor element by this invention.

以下、本発明の実施形態を添付図面に基づき詳細に説明する。図1および図2に示すように、本発明によるKuバンド帯やKバンド帯などの高周波信号を取扱うマイクロ波送信機として、衛星通信用のVSAT(超小型地球局)などに用いられるBUC(Block Up Converter)や高周波電力増幅器などの電子機器には、その金属筐体100の内部にMMIC(モノリシックマイクロ波集積回路)、MIC(マイクロ波集積回路)、高周波アンプなどの半導体素子200が搭載されている。この半導体素子200は、その内部に図示を省略した発熱を伴う半導体チップが実装され、この半導体チップが熱伝導性の良好な材質で形成されたパッケージ210で気密封止されている。   Embodiments of the present invention will be described below in detail with reference to the accompanying drawings. As shown in FIGS. 1 and 2, as a microwave transmitter for handling high-frequency signals in the Ku-band or K-band according to the present invention, a BUC (Block) used for satellite communication VSAT (miniature earth station) or the like is used. Electronic devices such as up converters and high frequency power amplifiers have semiconductor elements 200 such as MMICs (monolithic microwave integrated circuits), MICs (microwave integrated circuits), and high frequency amplifiers mounted inside the metal casing 100. Yes. The semiconductor element 200 has a semiconductor chip with heat generation (not shown) mounted therein, and the semiconductor chip is hermetically sealed with a package 210 formed of a material having good thermal conductivity.

特に、パワーアンプ用のMMICなどのように発熱量の大きい半導体素子200では、このパッケージ210の下部側にはフランジ状の取付座220が両側に突出され、この取付座220に取付ネジ230が挿通される切欠き孔221がそれぞれ形成されている。また、取付座220の突出方向とは異なる方向で、パッケージ210の両側には、VGG、RFin、VDDおよびRFout用の端子となる薄い板状のピン端子211がそれぞれ突出され、パッケージ210の内部回路に接続されている。   In particular, in the semiconductor element 200 with a large calorific value such as a power amplifier MMIC, a flange-like mounting seat 220 protrudes on both sides of the lower portion of the package 210, and a mounting screw 230 is inserted into the mounting seat 220. Notched holes 221 are formed respectively. Further, thin plate-like pin terminals 211 serving as terminals for VGG, RFin, VDD, and RFout are projected on both sides of the package 210 in a direction different from the projecting direction of the mounting seat 220, respectively. It is connected to the.

次に、図2に示すように、電子機器の金属筐体100の内面110上に配置される回路基板300は、その上面に高周波平面回路を構成するマイクロストリップ線路からなる回路導体パターン310が形成され、この回路導体パターン310に半田付けによって接続されるピン端子211を有する半導体素子200を挿入するための開口部320が形成されている。そして、回路導体パターン310は開口部320の周縁まで形成され、開口部320は、半導体素子200の取付座220に対応する大きさに形成されている。   Next, as shown in FIG. 2, the circuit board 300 disposed on the inner surface 110 of the metal casing 100 of the electronic device is formed with a circuit conductor pattern 310 made of a microstrip line constituting a high-frequency planar circuit on the upper surface. An opening 320 for inserting the semiconductor element 200 having the pin terminal 211 connected to the circuit conductor pattern 310 by soldering is formed. The circuit conductor pattern 310 is formed up to the periphery of the opening 320, and the opening 320 is formed in a size corresponding to the mounting seat 220 of the semiconductor element 200.

伝熱部材400は、導電性および熱伝導性を有する長方形の軟質金属箔からなり、例えば、断面凹凸状にエンボス加工を施したものになっている。そして、図2に示すように、伝熱部材400の短手方向の長さaは、図1(b)に示すように、パッケージ210の長手方向の長さbと対応する長さになっている。なお、伝熱部材400は、少なくとも導電性および熱伝導性を有するものであればよく、断面凹凸状に加工されていない軟質金属箔やそれ以外の樹脂シート(導電性樹脂シートを含む)であってもよい。   The heat transfer member 400 is made of a rectangular soft metal foil having electrical conductivity and thermal conductivity, and has, for example, an embossed cross-sectional uneven shape. As shown in FIG. 2, the length a in the short direction of the heat transfer member 400 is a length corresponding to the length b in the longitudinal direction of the package 210 as shown in FIG. Yes. The heat transfer member 400 only needs to have at least conductivity and heat conductivity, and is a soft metal foil or other resin sheet (including a conductive resin sheet) that has not been processed into a concavo-convex shape in cross section. May be.

電子機器の金属筐体100は、熱伝導性を有する銅やアルミニウムなどの金属からなり、例えば、アルミダイキャスト製筐体の外面に放熱フィン120が一体的に形成されたものとなっている。この放熱フィン120と対向する金属筐体100の内面110には、半導体素子200の取付座220を固定する固定部130を備え、この固定部130は、半導体素子200の取付座220が嵌め込まれる第1凹面140と、この第1凹面140と直交する方向に形成された第2凹面150とからなっている。伝熱部材400は、この第2凹面150に敷かれて、半導体素子200のパッケージ210と対向するように配設されている。   The metal casing 100 of the electronic device is made of a metal such as copper or aluminum having thermal conductivity. For example, the heat radiating fins 120 are integrally formed on the outer surface of an aluminum die-cast casing. The inner surface 110 of the metal casing 100 facing the heat dissipating fin 120 is provided with a fixing portion 130 for fixing the mounting seat 220 of the semiconductor element 200. The fixing portion 130 is a first portion into which the mounting seat 220 of the semiconductor element 200 is fitted. It consists of a first concave surface 140 and a second concave surface 150 formed in a direction perpendicular to the first concave surface 140. The heat transfer member 400 is disposed on the second concave surface 150 so as to face the package 210 of the semiconductor element 200.

そして、第1凹面140の底面には、取付ネジ230がねじ込まれるネジ孔141が形成され、第2凹面150の深さが、第1凹面140の深さと等しくなるように平滑に連続的に形成されている。更に、第1凹面140および第2凹面150の深さは、金属筐体100の内面110上に回路基板300が配置された状態で、回路基板300に形成された回路導体パターン310と半導体素子200のピン端子211とがそれぞれ面一になるように、第2凹面150と半導体素子200との間に挟まれる伝熱部材40の厚さを考慮した上で決められている。   A screw hole 141 into which the mounting screw 230 is screwed is formed on the bottom surface of the first concave surface 140, and the second concave surface 150 is formed smoothly and continuously so that the depth of the second concave surface 150 is equal to the depth of the first concave surface 140. Has been. Furthermore, the depths of the first concave surface 140 and the second concave surface 150 are set such that the circuit conductor pattern 310 and the semiconductor element 200 formed on the circuit board 300 in a state where the circuit board 300 is disposed on the inner surface 110 of the metal casing 100. It is determined in consideration of the thickness of the heat transfer member 40 sandwiched between the second concave surface 150 and the semiconductor element 200 so that the pin terminals 211 are flush with each other.

これにより、第2凹面150を形成するための加工が簡単で、第2凹面150に伝熱部材400を配設するだけで、伝熱部材400の位置を規制することができる。具体的には、組立工程内で、伝熱部材400を第2凹面150に配設した後、半導体素子200の取付座220を第2凹面150にネジ止めする前に、組立作業台上で金属筐体100に触れて伝熱部材400が動いてしまったり、伝熱部材400を配設した直後に、ピンセットなどの配設手段に触れて伝熱部材400が動いてしまったり、半導体素子200のネジ止め時に伝熱部材400が動いてしまったりすることがなく、伝熱部材400の位置ズレを防止することができる。   Thereby, the process for forming the 2nd concave surface 150 is easy, and the position of the heat transfer member 400 can be controlled only by arrange | positioning the heat transfer member 400 in the 2nd concave surface 150. FIG. Specifically, in the assembly process, after the heat transfer member 400 is disposed on the second concave surface 150, before the mounting seat 220 of the semiconductor element 200 is screwed to the second concave surface 150, the metal is formed on the assembly work table. The heat transfer member 400 moves by touching the housing 100, or immediately after the heat transfer member 400 is disposed, the heat transfer member 400 moves by touching an arrangement means such as tweezers. The heat transfer member 400 does not move at the time of screwing, and displacement of the heat transfer member 400 can be prevented.

なお、図3(A)に示すように、半導体素子200の取付座220に形成された切欠き孔221と、第1凹面140の底面に形成されたネジ孔141によって、半導体素子200を金属筐体100に固定するためのネジ止め部240を構成している。   As shown in FIG. 3A, the semiconductor element 200 is made up of a metal housing by a notch hole 221 formed in the mounting seat 220 of the semiconductor element 200 and a screw hole 141 formed in the bottom surface of the first concave surface 140. A screwing portion 240 for fixing to the body 100 is configured.

以上説明してきた半導体素子200の放熱構造を備えた電子機器の組立手順は、最初に、金属筐体100の第2凹面150に伝熱部材400を配設する。次に、回路基板300を金属筐体100の内面110上に配置して、回路基板300の下面に形成された図示を省略したアース導体と金属筐体100の内面110とを接触させる。その後、半導体素子200を回路基板300の開口部320から挿入して、半導体素子200の取付座220を金属筐体100の第1凹面140上に嵌め込み、取付ネジ230を取付座220の切欠き孔221を挿通して第1凹面140の底面に形成したネジ孔141にねじ込ませる。   In the assembly procedure of the electronic device having the heat dissipation structure of the semiconductor element 200 described above, the heat transfer member 400 is first disposed on the second concave surface 150 of the metal casing 100. Next, the circuit board 300 is disposed on the inner surface 110 of the metal housing 100, and the ground conductor (not shown) formed on the lower surface of the circuit board 300 is brought into contact with the inner surface 110 of the metal housing 100. Thereafter, the semiconductor element 200 is inserted from the opening 320 of the circuit board 300, the mounting seat 220 of the semiconductor element 200 is fitted on the first concave surface 140 of the metal housing 100, and the mounting screw 230 is inserted into the notch hole of the mounting seat 220. 221 is inserted and screwed into a screw hole 141 formed in the bottom surface of the first concave surface 140.

そして、回路基板300の回路導体パターン310と半導体素子200のピン端子211とが互いに適正な位置となるように、半導体素子200を位置決めした状態で取付ネジ230を締め付けて固定する。最後に、半導体素子200のピン端子211を回路基板300の回路導体パターン310に半田付けして接続する。   Then, the mounting screw 230 is fastened and fixed in a state where the semiconductor element 200 is positioned so that the circuit conductor pattern 310 of the circuit board 300 and the pin terminal 211 of the semiconductor element 200 are in an appropriate position. Finally, the pin terminal 211 of the semiconductor element 200 is soldered and connected to the circuit conductor pattern 310 of the circuit board 300.

このようにして組立てられた電子機器は、図3(A)および図3(B)に示すように、半導体素子200の取付座220が、取付ネジ230による最適なネジ締めトルクによって、第2凹面150内に敷かれた伝熱部材400を押圧し、伝熱部材400が、半導体素子200の取付座220と第2凹面150の底面との間に挟まれて互いに接触している状態になっている。これにより、半導体素子200のパッケージ210内に発生した熱は、半導体素子200の取付座220から伝熱部材400へ伝熱され、この伝熱部材400を介して金属筐体100へ伝熱されて、金属筐体100から外部へ放熱される。   As shown in FIG. 3A and FIG. 3B, the electronic device assembled in this manner has the second concave surface of the mounting seat 220 of the semiconductor element 200 by the optimum screw tightening torque by the mounting screw 230. The heat transfer member 400 laid in 150 is pressed, and the heat transfer member 400 is sandwiched between the mounting seat 220 of the semiconductor element 200 and the bottom surface of the second concave surface 150 and is in contact with each other. Yes. Thereby, the heat generated in the package 210 of the semiconductor element 200 is transferred from the mounting seat 220 of the semiconductor element 200 to the heat transfer member 400, and is transferred to the metal casing 100 via the heat transfer member 400. The heat is radiated from the metal casing 100 to the outside.

以上説明してきた半導体素子200の放熱構造によれば、簡単な構造かつ組立が容易で良好な放熱性能を得ることができ、半導体素子200の温度上昇を抑え、半導体素子200の破壊を防止することができる。また、半導体素子200のパッケージ210内部の図示を省略した半導体チップの真下に伝熱部材400を挟むようにしたので、伝熱部材400が小さい部材でも効果的に放熱することができる。   According to the heat dissipation structure of the semiconductor element 200 described above, a simple structure, easy assembly, and good heat dissipation performance can be obtained, temperature rise of the semiconductor element 200 is suppressed, and destruction of the semiconductor element 200 is prevented. Can do. Further, since the heat transfer member 400 is sandwiched directly under the semiconductor chip (not shown) inside the package 210 of the semiconductor element 200, even a member having a small heat transfer member 400 can effectively dissipate heat.

また、半導体素子200の取付座220と第2凹面150の底面のそれぞれには実際には微少な凹凸や反りがあるが、断面凹凸状の伝熱部材400が、取付座220と第2凹面150との平面度の良い部分は完全に潰れ、悪い部分では変形して、互いを接触させることになるので、取付座220と第2凹面150との間で接触状態に優れ、安定した電気的な導通を得ることができる。また、取付ネジ230に加え、伝熱部材400によって、取付座220と金属筐体100との間の十分な導通が得られ、半導体素子200と金属筐体100間のグランド電位が安定するので、電子機器の高周波特性を良好にすることができる。更に、取付座220と金属筐体100との間の導通だけでなく密着性も強くなるので、熱伝導が大きくなり放熱性を高めることができる。   In addition, although the mounting seat 220 of the semiconductor element 200 and the bottom surface of the second concave surface 150 are actually slightly uneven and warped, the heat transfer member 400 having an uneven cross-section has the mounting seat 220 and the second concave surface 150. The portion with good flatness is completely crushed, and the portion with bad flatness is deformed and brought into contact with each other, so that the contact state between the mounting seat 220 and the second concave surface 150 is excellent and stable electrical Conductivity can be obtained. In addition to the mounting screw 230, the heat transfer member 400 provides sufficient conduction between the mounting seat 220 and the metal housing 100, and the ground potential between the semiconductor element 200 and the metal housing 100 is stabilized. The high frequency characteristics of the electronic device can be improved. Furthermore, since not only conduction between the mounting seat 220 and the metal casing 100 but also adhesion is enhanced, heat conduction is increased and heat dissipation can be improved.

次に、伝熱部材400のその他の実施形態を説明する。図4に示すように、伝熱部材500は、伝熱部材400のように長方形ではなく、十字形状に形成され、第2凹面150から第1凹面140に渡って配設されるように形成されている。そして、伝熱部材500は、第1凹面140の底面に形成されたネジ孔141と、半導体素子200の取付座220に形成された切欠き孔221とから逃げて配設される形状、すなわち、伝熱部材500の長さcが、図2に示す2つのネジ孔141間の長さdよりも小さく、2つのネジ孔141間の内側に配設される形状になっている。この伝熱部材500を伝熱部材400に替えて、第1凹面140および第2凹面150の両面にかかるように敷き、半導体素子200の取付座220と第1凹面140および第2凹面150との間に挟まれて互いに接触させるようにする。   Next, other embodiments of the heat transfer member 400 will be described. As shown in FIG. 4, the heat transfer member 500 is formed in a cross shape instead of a rectangle like the heat transfer member 400, and is arranged to extend from the second concave surface 150 to the first concave surface 140. ing. The heat transfer member 500 has a shape that escapes from the screw hole 141 formed in the bottom surface of the first concave surface 140 and the notch hole 221 formed in the mounting seat 220 of the semiconductor element 200, that is, The length c of the heat transfer member 500 is smaller than the length d between the two screw holes 141 shown in FIG. 2, and the heat transfer member 500 is disposed inside the two screw holes 141. The heat transfer member 500 is replaced with the heat transfer member 400 and laid on both surfaces of the first concave surface 140 and the second concave surface 150, and the mounting seat 220 of the semiconductor element 200 and the first concave surface 140 and the second concave surface 150 It is sandwiched between them so that they touch each other.

これにより、伝熱部材500が、第2凹面150の方向に加え、第1凹面140の方向にも延びて配設させることができるので、伝熱部材400を用いた場合に比べ、取付座220と金属筐体100との間の互いに接触する面積が広がり、金属筐体100から外部への放熱性を向上することができる。また、伝熱部材500は、ネジ孔141と切欠き孔221とから逃げて配設されているので、半導体素子200の取付座220をネジ止めする際に邪魔にならないようにすることができる。   As a result, the heat transfer member 500 can be arranged so as to extend in the direction of the first concave surface 140 in addition to the direction of the second concave surface 150, so that compared to the case where the heat transfer member 400 is used, the mounting seat 220. The area in contact with each other between the metal casing 100 and the metal casing 100 is widened, and heat dissipation from the metal casing 100 to the outside can be improved. Further, since the heat transfer member 500 is disposed so as to escape from the screw hole 141 and the notch hole 221, it is possible to prevent the heat transfer member 500 from getting in the way when the mounting seat 220 of the semiconductor element 200 is screwed.

なお、本実施形態では、金属筐体100の内面110に、第1凹面140と第2凹面150とを直交するように形成されるようにしたが、本発明はこれに限定されず、第1凹面140と第2凹面150とを交差するように形成されていればよく、この場合には、伝熱部材500をこの交差角度に対応した十字状に形成すればよい。   In the present embodiment, the first concave surface 140 and the second concave surface 150 are formed to be orthogonal to the inner surface 110 of the metal casing 100. However, the present invention is not limited to this, and the first The concave surface 140 and the second concave surface 150 may be formed so as to intersect with each other. In this case, the heat transfer member 500 may be formed in a cross shape corresponding to the intersecting angle.

以上説明してきた本発明の半導体素子の放熱構造によれば、下部側にフランジ状の取付座220を備えた半導体素子200と、取付座220を固定する固定部130を備えた金属筐体100と、取付座220と固定部130との間に配設される伝熱部材400とからなる構造において、固定部130は取付座220が嵌め込まれる第1凹面140と、第1凹面140と交差する方向に形成された第2凹面150とからなり、伝熱部材400は第2凹面150に配設されるようにした。これにより、簡単な構造、かつ、組立が容易で良好な放熱性能を得ることができる。   According to the semiconductor element heat dissipation structure of the present invention described above, the semiconductor element 200 including the flange-shaped mounting seat 220 on the lower side, and the metal housing 100 including the fixing portion 130 for fixing the mounting seat 220 to the semiconductor element 200. In the structure comprising the heat transfer member 400 disposed between the mounting seat 220 and the fixing portion 130, the fixing portion 130 intersects the first concave surface 140 into which the mounting seat 220 is fitted and the first concave surface 140. The heat transfer member 400 is arranged on the second concave surface 150. As a result, a simple structure, easy assembly, and good heat dissipation performance can be obtained.

また、第2凹面150の深さは、第1凹面140の深さと等しくするようにした。これにより、第2凹面150を形成するための加工が簡単で、第2凹面150に配設された伝熱部材400の位置ズレを防止することができる。   In addition, the depth of the second concave surface 150 is made equal to the depth of the first concave surface 140. Thereby, the process for forming the 2nd concave surface 150 is easy, and the position shift of the heat-transfer member 400 arrange | positioned at the 2nd concave surface 150 can be prevented.

また、伝熱部材400は、断面凹凸状の軟質金属箔からなるようにした。これにより、半導体素子200を金属筐体100にネジ止めする際に、軟質金属箔は、取付座220と第2凹面150との平面度の良い部分は完全に潰れ、悪い部分では変形して、互いを接触させることができるので、取付座220と第2凹面150との間の導通を良好にすることができる。そして、取付座220と第2凹面150との間の導通だけでなく密着性も強くなるので、熱伝導が大きくなり放熱性を高めることができる。   Further, the heat transfer member 400 was made of a soft metal foil having an uneven cross section. As a result, when the semiconductor element 200 is screwed to the metal casing 100, the soft metal foil is completely crushed in the flat part of the mounting seat 220 and the second concave surface 150, and deformed in the bad part, Since they can be brought into contact with each other, conduction between the mounting seat 220 and the second concave surface 150 can be improved. And since not only the conduction | electrical_connection between the mounting seat 220 and the 2nd concave surface 150 but adhesiveness becomes strong, heat conduction becomes large and can improve heat dissipation.

また、伝熱部材500は十字形状に形成され、第2凹面150から第1凹面140に渡って配設されるようにした。これにより、伝熱部材500が第1凹面140の方向にも延びて、取付座220と金属筐体100との間で互いに接触する面積が広がるので、金属筐体100から外部への放熱性を向上することができる。   In addition, the heat transfer member 500 is formed in a cross shape and is disposed from the second concave surface 150 to the first concave surface 140. As a result, the heat transfer member 500 extends in the direction of the first concave surface 140, and the area of contact between the mounting seat 220 and the metal casing 100 increases, so that heat dissipation from the metal casing 100 to the outside is improved. Can be improved.

更に、取付座220と第1凹面140のそれぞれ対応する位置に半導体素子200を金属筐体100に固定するためのネジ止め部240が設けられ、十字形状の伝熱部材500はネジ止め部240を逃げた形状とするようにした。これにより、半導体素子200の取付座220をネジ止めする際に邪魔にならないようにすることができる。   Furthermore, a screwing portion 240 for fixing the semiconductor element 200 to the metal casing 100 is provided at a position corresponding to each of the mounting seat 220 and the first concave surface 140, and the cross-shaped heat transfer member 500 has the screwing portion 240. The escaped shape was used. Thereby, when screwing the mounting seat 220 of the semiconductor element 200, it can be prevented from getting in the way.

100 金属筐体
110 内面
120 放熱フィン
130 固定部
140 第1凹面
141 ネジ孔
150 第2凹面
200 半導体素子
210 パッケージ
211 ピン端子
220 取付座
221 切欠き孔
230 取付ネジ
240 ネジ止め部
300 回路基板
310 回路導体パターン
320 開口部
400 伝熱部材
500 伝熱部材
DESCRIPTION OF SYMBOLS 100 Metal housing | casing 110 Inner surface 120 Radiation fin 130 Fixed part 140 1st concave surface 141 Screw hole 150 2nd concave surface 200 Semiconductor element 210 Package 211 Pin terminal 220 Mounting seat 221 Notch hole 230 Mounting screw 240 Screw fixing part 300 Circuit board 310 Circuit Conductor pattern 320 Opening 400 Heat transfer member 500 Heat transfer member

Claims (6)

下部側にフランジ状の取付座を備えた半導体素子と、前記取付座を固定する固定部を備えた筐体と、前記取付座と前記固定部との間に配設される伝熱部材とからなる半導体素子の放熱構造において、前記固定部は前記取付座が嵌め込まれる第1凹面と、同第1凹面と交差する方向に形成された第2凹面とからなり、前記伝熱部材は前記第2凹面に配設されることを特徴とする半導体素子の放熱構造。   From a semiconductor element having a flange-shaped mounting seat on the lower side, a housing having a fixing portion for fixing the mounting seat, and a heat transfer member disposed between the mounting seat and the fixing portion In the semiconductor device heat dissipation structure, the fixing portion includes a first concave surface into which the mounting seat is fitted, and a second concave surface formed in a direction intersecting the first concave surface, and the heat transfer member is the second concave surface. A heat dissipation structure for a semiconductor element, wherein the heat dissipation structure is disposed on a concave surface. 前記第2凹面の深さは、前記第1凹面の深さと等しくすることを特徴とする請求項1記載の半導体素子の放熱構造。   2. The heat dissipation structure for a semiconductor device according to claim 1, wherein a depth of the second concave surface is equal to a depth of the first concave surface. 前記伝熱部材は、断面凹凸状の軟質金属箔からなることを特徴とする請求項1または請求項2記載の半導体素子の放熱構造。   3. The heat dissipation structure for a semiconductor element according to claim 1, wherein the heat transfer member is made of a soft metal foil having an uneven cross section. 前記伝熱部材は十字形状に形成され、前記第2凹面から前記第1凹面に渡って配設されることを特徴とする請求項1乃至請求項3のいずれかに記載の半導体素子の放熱構造。   4. The heat dissipation structure for a semiconductor device according to claim 1, wherein the heat transfer member is formed in a cross shape and is disposed from the second concave surface to the first concave surface. 5. . 前記取付座と前記第1凹面のそれぞれ対応する位置に前記半導体素子を前記筐体に固定するためのネジ止め部が設けられ、前記十字形状の伝熱部材は前記ネジ止め部を逃げた形状とすることを特徴とする請求項4記載の半導体素子の放熱構造。   A screwing portion for fixing the semiconductor element to the housing is provided at a position corresponding to each of the mounting seat and the first concave surface, and the cross-shaped heat transfer member has a shape in which the screwing portion escapes. 5. The heat dissipation structure for a semiconductor device according to claim 4, wherein: 請求項1乃至請求項5のいずれかに記載の半導体素子の放熱構造を備えた電子機器。   An electronic device comprising the semiconductor element heat dissipation structure according to claim 1.
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