JP5016067B2 - 多孔SiCOH膜を含む半導体デバイス構造およびその製造方法 - Google Patents
多孔SiCOH膜を含む半導体デバイス構造およびその製造方法 Download PDFInfo
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- JP5016067B2 JP5016067B2 JP2009554727A JP2009554727A JP5016067B2 JP 5016067 B2 JP5016067 B2 JP 5016067B2 JP 2009554727 A JP2009554727 A JP 2009554727A JP 2009554727 A JP2009554727 A JP 2009554727A JP 5016067 B2 JP5016067 B2 JP 5016067B2
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- 239000004065 semiconductor Substances 0.000 title description 15
- 238000004519 manufacturing process Methods 0.000 title description 6
- 239000002243 precursor Substances 0.000 claims description 87
- 229910052799 carbon Inorganic materials 0.000 claims description 70
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 68
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- 238000000034 method Methods 0.000 claims description 51
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- 239000001301 oxygen Substances 0.000 claims description 49
- 239000003989 dielectric material Substances 0.000 claims description 45
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- 239000004020 conductor Substances 0.000 claims description 16
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- KAJRUHJCBCZULP-UHFFFAOYSA-N 1-cyclohepta-1,3-dien-1-ylcyclohepta-1,3-diene Chemical group C1CCC=CC=C1C1=CC=CCCC1 KAJRUHJCBCZULP-UHFFFAOYSA-N 0.000 description 6
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- NBBQQQJUOYRZCA-UHFFFAOYSA-N diethoxymethylsilane Chemical compound CCOC([SiH3])OCC NBBQQQJUOYRZCA-UHFFFAOYSA-N 0.000 description 5
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- AHAREKHAZNPPMI-UHFFFAOYSA-N hexa-1,3-diene Chemical compound CCC=CC=C AHAREKHAZNPPMI-UHFFFAOYSA-N 0.000 description 2
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- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
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- SJYNFBVQFBRSIB-UHFFFAOYSA-N norbornadiene Chemical group C1=CC2C=CC1C2 SJYNFBVQFBRSIB-UHFFFAOYSA-N 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
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- 229910052724 xenon Inorganic materials 0.000 description 1
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Description
a)誘電材料層または導電材料層を有する基板を用意するステップと、
b)誘電材料層または導電材料層上に、実質的に炭素を有しない酸化物層を形成するステップと、
c)酸化物層上に傾斜遷移層を形成するステップであって、この傾斜遷移層が、酸化物層との界面において実質的に炭素を有さず、多孔SiOH層に向かって徐々に炭素が増大していく、ステップと、
d)傾斜遷移層上に多孔SiCOH層を形成するステップであって、この多孔SiOH層がこの層全体に均質かつ均一の組成を有する、ステップと、
を含む。
a)誘電材料層または導電材料層を有する基板を用意するステップと、
b)誘電材料層または導電材料層上に、実質的に炭素を有しない酸化物層を形成するように、第1の時間期間にわたって酸素およびSiCOH前駆物質流をチャンバ内に導入するステップと、
c)酸化物層上に傾斜遷移層を形成するように、酸素流を維持しながら、SiCOH前駆物質流を所定量まで徐々に増大させると共に、第2の時間期間にわたってチャンバ内にポロゲン前駆物質流を導入し所定量まで徐々に増大させるステップであって、傾斜遷移層が、酸化物層との界面において実質的に炭素を有さず、多孔SiOH層に向かって徐々に炭素が増大していく、ステップと、
d)傾斜遷移層上に多孔SiCOH層を形成するように、第3の時間期間にわたってチャンバ内のSiCOH前駆物質およびポロゲン前駆物質流を所定量に維持しながら、酸素流を所定値まで急激に低減させるステップであって、多孔SiOH層がこの層全体に均質な組成を有する、ステップと、
を含む。
a)誘電材料層または導電材料層を有する基板を用意するステップと、
b)誘電材料層または導電材料層上に、実質的に炭素を有しない酸化物層を形成するように、第1の時間期間にわたって酸素流およびSiCOH前駆物質流をチャンバ内に導入するステップであって、酸素およびSiCOH前駆物質流が、開始時間、終了時間、および第1の時間期間中の増大率について別個に調節可能である、ステップと、
c)酸化物層上に傾斜遷移層を形成するように、酸素流を維持しながら、SiCOH前駆物質流を所定の量まで徐々に増大させると共に、第2の時間期間にわたってチャンバ内にポロゲン前駆物質流を導入し所定量まで徐々に増大させるステップであって、傾斜遷移層が、酸化物層との界面において実質的に炭素を有さず、多孔SiOH層に向かって徐々に炭素が増大していき、酸素、SiCOH前駆物質、およびポロゲン前駆物質流が、開始時間、終了時間、および第2の時間期間中の増大率について別個に調節可能である、ステップと、
d)傾斜遷移層上に多孔SiCOH層を形成するように、第3の時間期間にわたってチャンバ内のSiCOH前駆物質およびポロゲン前駆物質流を所定量に維持しながら、酸素流を所定値まで急激に低減させるステップであって、多孔SiOH層がこの層全体に均質な組成を有し、酸素、SiCOH前駆物質、およびポロゲン前駆物質流が、開始時間、終了時間、および第3の時間期間中の増大率について別個に調節可能である、ステップと、
を含む。
誘電材料層または導電材料層を有する基板と、
誘電材料層または導電材料層上の、実質的に炭素を有しない酸化物層と、
酸化物層上の傾斜遷移層であって、酸化物層との界面において実質的に炭素を有さず、多孔SiOH層に向かって徐々に炭素が増大していく、傾斜遷移層と、
傾斜遷移層上の多孔SiCOH層であって、この層全体に均質な組成を有する、多孔SiCOH層と、
を含む。
誘電材料層を有する基板と、
誘電材料層内の複数の銅ダマシン導体と、を含み、この誘電材料が、
誘電材料層上の、実質的に炭素を有しない酸化物層と、
酸化物層上の傾斜遷移層であって、酸化物層との界面において実質的に炭素を有さず、多孔SiOH層に向かって徐々に炭素が増大していく、傾斜遷移層と、
傾斜遷移層上の多孔SiCOH(pSiCOH)層であって、この層全体に均質な組成を有する、多孔SiCOH層と、
を含む。
実施例1
SiCNH合金層を含むSiウェハを用いて、相互接続基板をシミュレーションした。同一のSiCNH合金が、予め形成したパターニング相互接続層を覆うようにした。SiCNH合金層を含むSiウェハをPECVDチャンバに配置し、図5に示した酸素、誘電体前駆物質、およびポロゲン前駆物質の流量に従って、多孔SiCOH層を準備した。以下の表1にプロセスの詳細を記載する。
SiCNH合金層を含む第2のSiウェハ(相互接続基板をシミュレーションする)をPECVDチャンバに配置し、図6に示した酸素、DEMS誘電体前駆物質、およびBCHDポロゲン前駆物質の流量プロファイルに従って、多孔SiCOH層を形成した。以下の表2にプロセスの詳細を記載する。
Claims (13)
- 異なる層間の界面力を向上させるための方法であって、
誘電または導電材料層を有する基板を用意するステップと、
前記誘電または導電材料層上に、実質的に炭素を有しない酸化物層を形成するステップと、
前記酸化物層上に傾斜遷移層を形成するステップであって、前記傾斜遷移層が、前記酸化物層との界面において実質的に炭素を有さず、多孔SiCOH層に向かって徐々に炭素が増大していく、前記ステップと、
前記傾斜遷移層上に多孔SiCOH層を形成するステップであって、前記多孔SiCOH層がこの層全体に均質な組成を有する、前記ステップと、を含み、
前記酸化物層を形成するステップ、傾斜遷移層を形成するステップ、および多孔SiCOH層を形成するステップが、ステップ間にプラズマを中断することなくプラズマ増強化学気相付着プロセスによって実行される、方法。 - 前記酸化物層において炭素濃度が3原子パーセント未満である、請求項1に記載の方法。
- 前記酸化物層において炭素濃度が0.1原子パーセント未満である、請求項1に記載の方法。
- 前記傾斜遷移層において炭素濃度にピークが存在しない、請求項1に記載の方法。
- 異なる層間の界面力を向上させるための方法であって、
a)誘電または導電材料層を有する基板を用意するステップと、
b)前記誘電または導電材料層上に、実質的に炭素を有しない酸化物層を形成するように、第1の時間期間にわたって酸素およびSiCOH前駆物質流をチャンバ内に導入するステップと、
c)前記酸化物層上に傾斜遷移層を形成するように、前記酸素流を維持しながら、前記SiCOH前駆物質流を所定量まで徐々に増大させると共に、第2の時間期間にわたって前記チャンバ内にポロゲン前駆物質流を導入し所定量まで徐々に増大させるステップであって、前記傾斜遷移層が、前記酸化物層との界面において実質的に炭素を有さず、多孔SiCOH層に向かって徐々に炭素が増大していく、前記ステップと、
d)前記傾斜遷移層上に多孔SiCOH層を形成するように、第3の時間期間にわたって前記チャンバ内の前記SiCOH前駆物質およびポロゲン前駆物質流を前記所定量に維持しながら、前記酸素流を所定値まで低減させるステップであって、前記多孔SiCOH層がこの層全体に均質な組成を有する、前記ステップと、
を含む、方法。 - 前記酸化物層を形成するステップb)が電力密度を低くして実行され、後のステップがもっと高い電力密度で実行される、請求項5に記載の方法。
- 前記ステップc)が、前記SiCOH前駆物質流を毎秒500から1500ミリグラム/分の間の傾斜率で徐々に増大させることを含み、更に、前記ポロゲン前駆物質流を毎秒100から600ミリグラム/分の間の傾斜率で徐々に増大させることを含む、請求項5に記載の方法。
- 全てのステップが、Heキャリア・ガス流を100から10,000sccmまでの範囲で用いることを含み、前記ステップb)が、SiCOH前駆物質流を毎分100から1000ミリグラムの範囲で用い、前記ステップd)が、SiCOH前駆物質流を毎分500から5000ミリグラムの範囲で用い、ポロゲン前駆物質流を毎分500から5000ミリグラムの範囲で用いることを含む、請求項5に記載の方法。
- 異なる層間の界面力を向上させるための方法であって、
a)誘電または導電材料層を有する基板を用意するステップと、
b)前記誘電または導電材料層上に、実質的に炭素を有しない酸化物層を形成するように、第1の時間期間にわたって酸素流およびSiCOH前駆物質流をチャンバ内に導入するステップであって、前記酸素およびSiCOH前駆物質流が、開始時間、終了時間、および前記第1の時間期間中の増大率について別個に調節可能である、前記ステップと、
c)前記酸化物層上に傾斜遷移層を形成するように、前記酸素流を維持しながら、前記SiCOH前駆物質流を所定量まで徐々に増大させると共に、第2の時間期間にわたって前記チャンバ内にポロゲン前駆物質流を導入し所定量まで徐々に増大させるステップであって、前記傾斜遷移層が、前記酸化物層との界面において実質的に炭素を有さず、多孔SiCOH層に向かって徐々に炭素が増大していき、前記酸素、SiCOH前駆物質、およびポロゲン前駆物質流が、開始時間、終了時間、および前記第2の時間期間中の増大率について別個に調節可能である、前記ステップと、
d)前記傾斜遷移層上に多孔SiCOH層を形成するように、第3の時間期間にわたって前記チャンバ内の前記SiCOH前駆物質およびポロゲン前駆物質流を前記所定量に維持しながら、前記酸素流を所定値まで低減させるステップであって、前記多孔SiCOH層がこの層全体に均質な組成を有し、前記酸素、SiCOH前駆物質、およびポロゲン前駆物質流が、開始時間、終了時間、および前記第3の時間期間中の増大率について別個に調節可能である、前記ステップと、
を含む、方法。 - 前記酸化物層を形成するステップ、傾斜遷移層を形成するステップ、および多孔SiCOH層を形成するステップが、ステップ間にプラズマを中断することなくプラズマ増強化学気相付着プロセスによって実行される、請求項9に記載の方法。
- 前記酸化物層を形成するステップb)が電力密度を低くして実行され、後のステップがもっと高い電力密度で実行される、請求項9に記載の方法。
- 前記ステップc)が、前記SiCOH前駆物質流を毎秒500から1500ミリグラム/分の間の増大率で徐々に増大させることを含み、更に、前記ポロゲン前駆物質流を毎秒100から600ミリグラム/分の間の増大率で徐々に増大させることを含む、請求項9に記載の方法。
- 全てのステップが、Heキャリア・ガス流を100から10,000sccmまでの範囲で用いることを含み、前記ステップb)が、SiCOH前駆物質流を毎分100から1000ミリグラムの範囲で用い、前記ステップd)が、SiCOH前駆物質流を毎分500から5000ミリグラムの範囲で用い、ポロゲン前駆物質流を毎分500から5000ミリグラムの範囲で用いることを含む、請求項9に記載の方法。
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DE102005024912A1 (de) * | 2005-05-31 | 2006-12-07 | Advanced Micro Devices, Inc., Sunnyvale | Technik zur Herstellung von kupferenthaltenden Leitungen, die in einem Dielektrikum mit kleinem ε eingebettet sind, durch Vorsehen einer Versteifungsschicht |
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2007
- 2007-03-23 US US11/690,248 patent/US7615482B2/en active Active
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2008
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- 2008-03-20 JP JP2009554727A patent/JP5016067B2/ja active Active
- 2008-03-20 WO PCT/US2008/057600 patent/WO2008118729A1/en active Application Filing
- 2008-03-24 TW TW97110434A patent/TW200849385A/zh unknown
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US20100009161A1 (en) | 2010-01-14 |
KR20100006559A (ko) | 2010-01-19 |
US7615482B2 (en) | 2009-11-10 |
US20080233366A1 (en) | 2008-09-25 |
TW200849385A (en) | 2008-12-16 |
WO2008118729A1 (en) | 2008-10-02 |
JP2010522433A (ja) | 2010-07-01 |
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