JP5014567B2 - 基体上の誘電体層とその作製方法 - Google Patents
基体上の誘電体層とその作製方法 Download PDFInfo
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- JP5014567B2 JP5014567B2 JP2004196161A JP2004196161A JP5014567B2 JP 5014567 B2 JP5014567 B2 JP 5014567B2 JP 2004196161 A JP2004196161 A JP 2004196161A JP 2004196161 A JP2004196161 A JP 2004196161A JP 5014567 B2 JP5014567 B2 JP 5014567B2
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- Prior art keywords
- dielectric layer
- dielectric
- substrate
- holes
- initiator
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- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- AFNRRBXCCXDRPS-UHFFFAOYSA-N tin(ii) sulfide Chemical compound [Sn]=S AFNRRBXCCXDRPS-UHFFFAOYSA-N 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000002061 vacuum sublimation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical class [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
なお、例示の図面は実寸法ではなく、単に模式したものである。従って、本発明の特定の寸法を描くことを意図するものではなく、特定の寸法はここに開示されたものの試験を通じて熟練の職人によって決められるものである。
110 導体基体
115 誘電体層
120 半導体層
125 ソース電極
130 ドレイン電極
135、140 スルーホール
155、160 ピット
165、170 バンプ
300 コンデンサ
305、315 導体
310 誘電体層
320、325 スルーホール
Claims (4)
- 基体及び誘電体層からなる装置を製作する方法であって、
前記基体を提供するステップ、
第1の誘電体材料を含む前記誘電体層を前記基体上に提供するステップであって、前記誘電体層が誘電体層の厚みを有し、前記基体との境界面から前記誘電体層の反対面まで通じるスルーホールに貫通される、ステップ、
前記誘電体層を前記基板上に提供するステップの前に、前記基板上に反応開始剤を提供するステップであって、前記誘電体層を提供するステップは前記スルーホールの開口付近の領域における前記反応開始剤の部分を非活性化しないものである、ステップ、及び
前記スルーホール付近の反応開始剤と選択的に反応する第2の誘電体材料を提供して該スルーホールを少なくとも部分的に塞ぐようにするステップ
を備える方法。
- 請求項1の方法であって、さらに、前記誘電体層上に半導体層を形成するステップ、及び前記半導体層上に、互いに離隔させてソース電極及びドレイン電極を形成するステップを含む方法。
- 基体及び誘電体層からなる装置を製作する方法であって、
前記基体を提供するステップ、
第1の誘電体材料を含む前記誘電体層を前記基体上に提供するステップであって、前記誘電体層が誘電体層の厚みを有し、前記基体との境界面から前記誘電体層の反対面まで通じるスルーホールに貫通される、ステップ、
前記誘電体層の反対面に第2の誘電体材料を提供するステップ、及び
前記基体に電界を印加して選択的に前記第2の誘電体材料が前記スルーホールを少なくとも部分的に塞ぐようにするステップ
を備える方法。
- 請求項3の方法であって、さらに、前記誘電体層上に半導体層を形成するステップ、及び前記半導体層上に、互いに離隔させてソース電極及びドレイン電極を形成するステップを含む方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US10/701185 | 2003-11-04 | ||
US10/701,185 US7045470B2 (en) | 2003-11-04 | 2003-11-04 | Methods of making thin dielectric layers on substrates |
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JP2011043790A Division JP5225409B2 (ja) | 2003-11-04 | 2011-03-01 | 基体上の誘電体層とその作製方法 |
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JP2005142527A JP2005142527A (ja) | 2005-06-02 |
JP5014567B2 true JP5014567B2 (ja) | 2012-08-29 |
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JP2011043790A Expired - Fee Related JP5225409B2 (ja) | 2003-11-04 | 2011-03-01 | 基体上の誘電体層とその作製方法 |
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US (1) | US7045470B2 (ja) |
JP (2) | JP5014567B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US6946676B2 (en) * | 2001-11-05 | 2005-09-20 | 3M Innovative Properties Company | Organic thin film transistor with polymeric interface |
US8520402B1 (en) * | 2005-10-25 | 2013-08-27 | Xilinx, Inc. | Decoupling capacitor circuit assembly |
US8414962B2 (en) * | 2005-10-28 | 2013-04-09 | The Penn State Research Foundation | Microcontact printed thin film capacitors |
US7528448B2 (en) * | 2006-07-17 | 2009-05-05 | E.I. Du Pont De Nemours And Company | Thin film transistor comprising novel conductor and dielectric compositions |
US20160301023A1 (en) * | 2013-12-03 | 2016-10-13 | Struya Sol Corporation | Photovoltaic devices based on organo-metallic molecules |
US10916381B2 (en) | 2014-07-29 | 2021-02-09 | The Florida State University Research Foundation. Inc. | Modulating electron transfer dynamics at hybrid interfaces via self-assembled multilayers |
WO2016039976A1 (en) | 2014-09-09 | 2016-03-17 | The Florida State University Research Foundation, Inc. | Molecular photon upconversion using organic-inorganic hybrid interfaces |
Family Cites Families (12)
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US4420497A (en) * | 1981-08-24 | 1983-12-13 | Fairchild Camera And Instrument Corporation | Method of detecting and repairing latent defects in a semiconductor dielectric layer |
US4471036A (en) * | 1983-06-29 | 1984-09-11 | The United States Of America As Represented By The United States Department Of Energy | Electrochemical photovoltaic cells and electrodes |
JPH02174269A (ja) * | 1988-12-27 | 1990-07-05 | Casio Comput Co Ltd | 薄膜トランジスタの製造方法 |
JPH0378729A (ja) * | 1989-08-22 | 1991-04-03 | Toppan Printing Co Ltd | 薄膜トランジスタアレイの製造方法 |
JPH03261145A (ja) * | 1990-03-12 | 1991-11-21 | Fujitsu Ltd | 半導体装置の表面平坦化方法 |
FR2664430B1 (fr) * | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
JP3494720B2 (ja) * | 1994-11-01 | 2004-02-09 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法、ならびにアクティブマトリクス型の液晶ディスプレー及びイメージセンサー |
US5625199A (en) * | 1996-01-16 | 1997-04-29 | Lucent Technologies Inc. | Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors |
US5731235A (en) * | 1996-10-30 | 1998-03-24 | Micron Technology, Inc. | Methods of forming a silicon nitrite film, a capacitor dielectric layer and a capacitor |
US5981970A (en) * | 1997-03-25 | 1999-11-09 | International Business Machines Corporation | Thin-film field-effect transistor with organic semiconductor requiring low operating voltages |
JP2002033318A (ja) * | 2000-07-18 | 2002-01-31 | Sony Corp | 半導体装置の製造方法 |
US6342164B1 (en) * | 2000-07-31 | 2002-01-29 | Motorola, Inc. | Pinhole-free dielectric films |
-
2003
- 2003-11-04 US US10/701,185 patent/US7045470B2/en not_active Expired - Lifetime
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2004
- 2004-07-02 JP JP2004196161A patent/JP5014567B2/ja not_active Expired - Fee Related
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Also Published As
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JP2005142527A (ja) | 2005-06-02 |
JP5225409B2 (ja) | 2013-07-03 |
US20050093107A1 (en) | 2005-05-05 |
US7045470B2 (en) | 2006-05-16 |
JP2011119762A (ja) | 2011-06-16 |
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