JP4998404B2 - Power module substrate, manufacturing method thereof, and power module - Google Patents

Power module substrate, manufacturing method thereof, and power module Download PDF

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JP4998404B2
JP4998404B2 JP2008205659A JP2008205659A JP4998404B2 JP 4998404 B2 JP4998404 B2 JP 4998404B2 JP 2008205659 A JP2008205659 A JP 2008205659A JP 2008205659 A JP2008205659 A JP 2008205659A JP 4998404 B2 JP4998404 B2 JP 4998404B2
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layer
power module
substrate
ceramic substrate
module substrate
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JP2009065144A (en
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敏之 長瀬
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三菱マテリアル株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

Description

  The present invention relates to a power module substrate used in a semiconductor device that controls a large current and a large voltage, a manufacturing method thereof, and a power module.

  In general, it is known that a power module for supplying power among semiconductor elements has a relatively high calorific value. As a power module substrate mounted on a power module, for example, there is a substrate formed by bonding a circuit layer to the surface of an AlN (aluminum nitride) ceramic substrate and bonding a metal layer to the back surface. On the circuit layer, an electronic component such as a semiconductor chip is mounted via a solder material. In addition, the metal layer is provided as a heat transfer layer for efficiently radiating the heat generated from the electronic component, and the power module substrate is joined to the heat sink such as a heat sink via the metal layer. It has become.

  In order to obtain good bonding strength between the ceramic substrate and the metal layer (or circuit layer), for example, Patent Document 1 proposes a method using a clad material formed by laminating different metal materials as the metal layer. ing. And as this clad material, the thing of the three-layer of Al-Ti-Cu is used, for example.

The Al layer is disposed on the surface of the metal layer (cladding material) on the ceramic substrate side, the Cu layer is disposed on the surface opposite to the ceramic substrate side, and the Ti layer includes the Al layer and the Cu layer. Between the two. The layers between the ceramic substrate and the metal layer are joined by brazing. Thus, by using a clad material made of different metal materials as the metal layer, the difference in thermal expansion coefficient of each material is utilized to improve the bonding reliability during the thermal cycle.
JP-A-11-97807

 However, when the metal layer is formed of a clad material of a different metal material, corrosion occurs between the metal materials, or the adhesion of the joint surface between the metal materials cannot be sufficiently ensured, There was a problem that these joint surfaces peeled off during thermal cycling.

 This invention is made | formed in view of the subject mentioned above, Comprising: It aims at providing the board | substrate for power modules which can improve the joining reliability at the time of a thermal cycle, its manufacturing method, and a power module.

 In order to achieve the above object, the present invention proposes the following means. That is, the method for manufacturing a power module substrate according to the present invention is a method for manufacturing a power module substrate in which a circuit layer is disposed on the front surface of a ceramic substrate and a metal layer is disposed on the back surface. The clad material is formed by laminating two or more layers including a first layer having a purity of 99.5 wt% or more and less than 99.9 wt% and a second layer having an aluminum purity of 99.99 wt% or more, The ceramic substrate and the metal layer are joined to each other by brazing with the first layer of material as the surface opposite to the ceramic substrate side. The power module according to the present invention is a power module using the power module substrate, wherein a semiconductor chip is bonded to the surface of the circuit layer, and a heat sink is bonded to the back surface of the first layer. It is characterized by.

 According to the method for manufacturing a power module substrate and the power module according to the present invention, the metal layer is formed of a clad material formed by laminating two or more layers of the same metal (aluminum). In addition, there is no risk of corrosion due to the dissimilar metal material, and the adhesion of the joint surface is sufficiently ensured. In addition, the clad material is a first layer of high hardness and high strength in which the surface opposite to the ceramic substrate side is formed with an aluminum purity of 99.5 wt% or more and less than 99.9 wt%. One layer effectively restrains the thermal expansion / shrinkage of the heat sink having a high thermal expansion coefficient that is bonded to the back surface of this layer in a later step, and can improve the bonding reliability during the thermal cycle.

 Moreover, since the ceramic substrate side of the first layer is a second layer having a low hardness and a low yield strength formed with an aluminum purity of 99.99 wt% or more, the second layer has a high thermal expansion during a thermal cycle. It serves as a buffer material that relieves stress generated due to the difference in thermal expansion coefficient between the heat sink having a coefficient and the ceramic substrate having a low coefficient of thermal expansion, and the bonding reliability of these can be further improved.

  In the method for manufacturing a power module substrate according to the present invention, a clad material including a total of three layers including the first layer and the second layer may be used as the metal layer. According to this, the surface and the back surface of the clad material are high hardness and high strength layers formed with an aluminum purity of 99.5 wt% or more and less than 99.9 wt%, respectively, and the heat sink and ceramics bonded to these layers The thermal expansion / shrinkage of the substrate can be effectively restrained. In addition, since the layer between these two layers is a low hardness and low proof stress layer formed with an aluminum purity of 99.99 wt% or more, this layer relieves the stress generated in this laminate during thermal cycling, and bonds Reliability can be further improved. Further, it is possible to provide a power module substrate that can be used in various ways according to various applications.

In the power module substrate according to the present invention, the ceramic substrate may be formed of any one of AlN, Al 2 O 3 , and Si 3 N 4 .

  According to the power module substrate, the manufacturing method thereof, and the power module according to the present invention, it is possible to improve the bonding reliability during the thermal cycle.

Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 is a longitudinal sectional view showing a power module according to a first embodiment of the present invention, and FIG. 2 is a longitudinal sectional view showing a power module according to a second embodiment of the present invention.

  As shown in FIG. 1, a power module 10 (10 a) according to the first embodiment of the present invention includes a power module substrate 4 having a ceramic substrate 1 and a semiconductor chip mounted on the surface of the power module substrate 4. 5 and a heat sink 7 bonded to the back surface of the power module substrate 4.

The power module substrate 4 has a configuration in which the circuit layer 2 is laminated on the front surface side of the ceramic substrate 1 and the metal layer 3 serving as a heat transfer layer for heat dissipation is laminated on the back surface side. The ceramic substrate 1 is formed of, for example, nitride ceramics such as AlN or Si 3 N 4 or oxide ceramics such as Al 2 O 3 . The circuit layer 2 is formed of a single layer of aluminum having a purity of 99.99 wt% or more. The metal layer 3 is a clad material in which two layers of aluminum having different purities are clad in advance, and the first surface of aluminum having a purity of 99.5 wt% or more and less than 99.9 wt% on the surface opposite to the ceramic substrate 1 side. The surface on the ceramic substrate 1 side is a second layer 3b made of aluminum having a purity of 99.99 wt% or more. The first layer 3a and the second layer 3b are each formed with a thickness of about 0.1 to 1.5 mm.

  The ceramic substrate 1, the circuit layer 2, and the metal layer 3, and the metal layer 3 and the heat sink 7 are brazed and joined via an Al—Si brazing material. Further, the circuit layer 2 and the semiconductor chip 5 are soldered together by a solder material. Reference numeral 6 in the figure indicates a bonding layer of this solder material.

  In the heat sink 7, a plurality of fins 9 formed along the extrusion direction of the cylinder 8 are arranged in the width direction in a flat cylinder 8 formed by extrusion molding of an Al alloy. A plurality of fine channels 11 are formed between the fins 9.

 Next, a method for manufacturing the power module substrate 4 and the power module 10 having such a laminated structure will be described. In order to manufacture the power module substrate 4, first, an Al—Si brazing material foil is disposed on both surfaces of the ceramic substrate 1, and the circuit layer 2 is disposed on the front surface and the metal layer 3 is disposed on the back surface. Then, the ceramic substrate 1, the brazing material foil, the circuit layer 2, and the metal layer 3 are heated in a state of being pressurized in the laminating direction in a vacuum atmosphere, and the brazing material foil is melted to thereby melt the ceramic. A power module substrate 4 in which a circuit layer 2 is brazed and a metal layer 3 is brazed and bonded to the front surface of the substrate 1 is manufactured.

 In order to manufacture the power module 10, after manufacturing the power module substrate 4 as described above, the power module substrate 4 is subjected to surface degreasing, etching, dematting treatment, double zincate processing, A Ni—P plating film of about 1 to 7 μm is formed by a plating bath. Next, the semiconductor chip 5 is soldered to the surface of the circuit layer 2 of the power module substrate 4 with a solder material 6, and the heat sink 7 is soldered or brazed to the back surface of the metal layer 3. Manufactured.

 In the power module 10 configured as described above, the metal layer 3 of the power module substrate 4 has a laminated structure made of the same metal (aluminum), so that the power module substrate 4 and the heat sink 7 can be bonded at the interface. It can effectively prevent the occurrence of corrosion and peeling. In addition, according to the embodiment of the present invention, the metal layer 3 has a first surface with a high hardness and a high strength in which the surface opposite to the ceramic substrate 1 side is formed with an aluminum purity of 99.5 wt% or more and less than 99.9 wt%. This first layer 3a effectively constrains the thermal expansion / shrinkage of the heat sink 7 having a high thermal expansion coefficient bonded to the back surface thereof, and can improve the bonding reliability during the thermal cycle. .

 Moreover, since the ceramic substrate 1 side of the first layer 3a is the second layer 3b having a low hardness and a low yield strength formed with an aluminum purity of 99.99 wt% or more, the second layer 3b during the thermal cycle is It plays the role of a buffer material that relieves the stress generated due to the difference in thermal expansion coefficient between the heat sink 7 having a high thermal expansion coefficient and the ceramic substrate 1 having a low thermal expansion coefficient, and it is possible to further improve the bonding reliability of these. .

Next, a second embodiment of the present invention will be described with reference to FIG. In addition, the same code | symbol is attached | subjected to the site | part similar to above-mentioned 1st embodiment, and the description is abbreviate | omitted.
In FIG. 2, the power module 10 (10b) has a metal layer 3 made of a three-layer aluminum clad material, and the surface opposite to the ceramic substrate 1 side has a purity of 99.5 wt% or more and less than 99.9 wt%. The first layer 3a is made of aluminum, and the layer on the ceramic substrate 1 side adjacent to the first layer 3a is made the second layer 3b of aluminum having a purity of 99.99 wt% or more. The ceramic substrate 1 side of the second layer 3b is an aluminum third layer 3c having a purity of 99.5 wt% or more and less than 99.9 wt%. The first layer 3a, the second layer 3b, and the third layer 3c are each formed with a thickness of about 0.1 to 1.5 mm.

 The ceramic substrate 1, the circuit layer 2, and the metal layer 3, and the metal layer 3 and the heat sink 7 are brazed and joined via an Al—Si brazing material.

 According to the second embodiment of the present invention, the front and back surfaces of the three-layer clad material forming the metal layer 3 are formed with aluminum purity of 99.5 wt% or more and less than 99.9 wt%, respectively, with high hardness and high strength. Therefore, the thermal expansion and contraction of the heat sink 7 and the ceramic substrate 1 bonded to these layers can be effectively restrained. Further, since the layer between these two layers 3a and 3c is the second layer 3b having a low hardness and a low yield strength formed with an aluminum purity of 99.99 wt% or more, this layer is formed on the laminate during thermal cycling. The generated stress can be relieved and the bonding reliability during thermal cycling can be further improved. Further, it is possible to provide the power module substrate 4 that can be used in various ways according to various applications.

 In addition, this invention is not limited to the said embodiment, A various change can be added in the range which does not deviate from the meaning of this invention. For example, in the present embodiment, the circuit layer 2 is formed of a single aluminum layer having a purity of 99.99 wt% or more. However, the circuit layer 2 is not limited to this. The clad material may be formed using a three-layer clad material, and the ceramic substrate 1 may be arranged symmetrically with the laminated structure of the metal layer 3 with the ceramic substrate 1 as a symmetrical plane.

  In the present embodiment, the ceramic substrate 1, the circuit layer 2, and the metal layer 3, and the metal layer 3 and the heat sink 7 are joined by an Al—Si brazing material. For example, an Al—Cu, Al—Mn, Al—Mg, or Al—Ge material may be used as long as it is a brazing material.

 In the present embodiment, the heat sink 7 including the plurality of fine flow paths 11 is bonded to the back surface of the power module substrate 4. However, the heat sink 7 is not limited to this as long as it has a heat dissipation effect. Instead, a heat radiating plate having a plurality of heat radiating fins may be used.

Hereinafter, the present invention will be specifically described by way of examples. However, the present invention is not limited to these examples.
[Example 1]
First, as the power module substrate 4, Al (circuit layer 2) / AlN (ceramics substrate 1) / Al (metal layer 3) are laminated in this order, and an Al—Si based brazing foil is disposed between the layers. Then, brazing was performed by applying a load in the stacking direction in a vacuum. Here, a single layer having an aluminum purity of 99.99 wt% or more was used for the circuit layer 2. The metal layer 3 includes a first layer 3a having an aluminum purity of 99.5 wt% or more and less than 99.9 wt% (2N—Al) and a second layer 3b having an aluminum purity of 99.99 wt% or more (4N—Al). A two-layer clad material was used. Then, the bonding was performed by arranging the metal layer 3 so that the surface opposite to the ceramic substrate 1 side is the first layer 3a, and the surface on the ceramic substrate 1 side is the second layer 3b. The thickness of the 1st layer 3a and the 2nd layer 3b was 0.3 mm, respectively.

  Next, this power module substrate 4 is subjected to surface degreasing, etching, dimming treatment, double zincate treatment, dipped in an electroless Ni-P plating bath (commercially available) for 10 minutes, and about 5 μm of Ni—P A plating film was formed. Then, a semiconductor (Si) chip 5 was joined to the surface of the power module substrate 4 and a heat sink 7 was joined to the back surface by soldering.

  Next, using the power module substrate 4 thus obtained, a thermal cycle test (−40 ° C. to 125 ° C.) was repeated, and when this was performed for 3000 cycles, an increase in thermal resistance was measured. In addition, the progress of cracks was examined by ultrasonic flaw detection, and the bonding reliability was evaluated. The results are shown in Table 1.

[Example 2]
As the metal layer 3, a clad material having a thickness of the first layer 3a of 0.4 mm and a thickness of the second layer 3b of 0.2 mm is used, and Al (circuit layer 2) / AlN (ceramics substrate) as in the first embodiment. 1) / Al (metal layer 3) are laminated in this order, and an Al—Si brazing material foil is disposed between the layers, and a load is applied in the laminating direction in a vacuum to heat and braze and join the power module substrate 4 Got. Next, the power module substrate 4 and the heat sink 7 were joined using an Al alloy-based brazing foil, and then the surface was degreased, etched, and dematted, and subjected to double zincate treatment. And it immersed for 10 minutes in the electroless Ni-P plating bath (commercially available), and formed the Ni-P plating film of about 5 micrometers. Thereafter, a semiconductor (Si) chip 5 was soldered to the surface of the power module substrate 4. This soldering was performed by heating at 360 ° C. in a mixed atmosphere of H 2 + N 2 = 7: 93 using a Pb-10 wt% Sn solder material. Other than that was evaluated in the same manner as in Example 1.

[Example 3]
The metal layer 3 is disposed between the first layer 3a and the third layer 3c having an aluminum purity of 99.5 wt% or more and less than 99.9 wt% (2N—Al), and between the first layer 3 a and the third layer 3 c. A three-layer clad material composed of the second layer 3b having an aluminum purity of 99.99 wt% or more (4N—Al) was used. The evaluation was performed in the same manner as in Example 2 except that the thicknesses of the first layer 3a, the second layer 3b, and the third layer 3c were each 0.2 mm.

[Comparative Example 1]
As the metal layer, a two-layer clad material made of different metal materials of Al and Cu was used. When laminating the circuit layer 2, the ceramic substrate 1, and the metal layer, a Cu layer is disposed on the surface of the metal layer opposite to the ceramic substrate 1 side, and an Al layer is disposed on the surface of the ceramic substrate 1 side. These were joined. The evaluation was performed in the same manner as in Example 1 except that the semiconductor (Si) chip 5 was bonded to the surface of the obtained power module substrate and the heat sink 7 was bonded to the back surface by soldering.

[Comparative Example 2]
Comparison was made except that the power module substrate and the heat sink 7 were joined by brazing using an Al alloy-based brazing foil, and then the semiconductor (Si) chip 5 was soldered to the surface of the power module substrate. The evaluation was performed in the same manner as in Example 1.

[Comparative Example 3]
As the metal layer, a three-layer clad material that was laminated in the order of Al / Ni / Cu and made of different metal materials was used. When laminating the circuit layer 2, the ceramic substrate 1, and the metal layer, a Cu layer is disposed on the surface of the metal layer opposite to the ceramic substrate 1 side, and an Al layer is disposed on the surface of the ceramic substrate 1 side. These were joined. Then, the semiconductor (Si) chip 5 was joined to the surface of the obtained power module substrate, and the heat sink 7 was joined to the back surface by soldering. Other than that, it evaluated similarly to the comparative example 1.

[Comparative Example 4]
Comparison was made except that the power module substrate and the heat sink 7 were joined by brazing using an Al alloy-based brazing foil, and then the semiconductor (Si) chip 5 was soldered to the surface of the power module substrate. The evaluation was performed in the same manner as in Example 3.

[Comparative Example 5]
The evaluation was performed in the same manner as in Comparative Example 3 except that a three-layer clad material made of different metal materials was used in the order of Al / Ti / Cu as the metal layer.

[Comparative Example 6]
Comparison was made except that the power module substrate and the heat sink 7 were joined by brazing using an Al alloy-based brazing foil, and then the semiconductor (Si) chip 5 was soldered to the surface of the power module substrate. The evaluation was performed in the same manner as in Example 5.

 As shown in Table 1, in Examples 1 to 3, the power interface board 4 and the heat sink 7 are bonded to each other regardless of whether soldering or brazing is used. It was found that the bonding reliability during the thermal cycle was high.

  On the other hand, in Comparative Example 1, Comparative Example 2, and Comparative Example 4, peeling of the bonding interface between different metal materials of the metal layer occurred. Moreover, in Comparative Example 3, Comparative Example 5, and Comparative Example 6, cracks developed in the ceramic substrate 1 and cracks occurred.

It is a longitudinal cross-sectional view which shows the power module of 1st embodiment of this invention. It is a longitudinal cross-sectional view which shows the power module of 2nd embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Ceramic substrate 2 Circuit layer 3 Metal layer 3a 1st layer 3b 2nd layer 3c 3rd layer 4 Power module substrate 5 Semiconductor chip 7 Heat sink 10 Power module

Claims (4)

  1. A method for manufacturing a power module substrate in which a circuit layer is disposed on the surface of a ceramic substrate and a metal layer is disposed on the back surface,
    The metal layer is formed of a clad material formed by laminating two or more layers including a first layer having an aluminum purity of 99.5 wt% or more and less than 99.9 wt% and a second layer having an aluminum purity of 99.99 wt% or more. Has been
    The first layer of the clad material as a surface opposite to the ceramic substrate side,
    A method of manufacturing a power module substrate, characterized in that the ceramic substrate and the metal layer are joined to each other by brazing.
  2. A power module using a power module substrate manufactured by the method for manufacturing a power module substrate according to claim 1,
    A semiconductor chip is bonded to the surface of the circuit layer,
    A power module, wherein a heat sink is bonded to the back surface of the first layer.
  3. A method for manufacturing a power module substrate according to claim 1,
    A method for manufacturing a power module substrate, wherein a clad material comprising a total of three layers including the first layer and the second layer is used as the metal layer.
  4. A power module substrate manufactured by the method for manufacturing a power module substrate according to claim 1 or 3,
    The ceramic substrate is made of any material selected from AlN, Al 2 O 3 , and Si 3 N 4 .
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JP5359954B2 (en) * 2009-03-31 2013-12-04 三菱マテリアル株式会社 Power module substrate with heat sink, power module, and method for manufacturing power module substrate with heat sink
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JP5771951B2 (en) * 2010-10-29 2015-09-02 三菱マテリアル株式会社 Power module substrate manufacturing method
JP5392272B2 (en) 2011-01-13 2014-01-22 株式会社豊田自動織機 Double-sided substrate, semiconductor device, and method for manufacturing semiconductor device
JP5772088B2 (en) * 2011-03-10 2015-09-02 三菱マテリアル株式会社 Power module substrate manufacturing method and power module substrate
JP5854758B2 (en) * 2011-10-24 2016-02-09 昭和電工株式会社 Electronic device mounting board
JP6031784B2 (en) * 2012-03-12 2016-11-24 三菱マテリアル株式会社 Power module substrate and manufacturing method thereof
JP6044097B2 (en) * 2012-03-30 2016-12-14 三菱マテリアル株式会社 Power module substrate with heat sink, power module substrate with cooler, and power module
US10068829B2 (en) * 2014-04-25 2018-09-04 Mitsubishi Materials Corporation Power-module substrate unit and power module
JP6340904B2 (en) * 2014-05-15 2018-06-13 三菱マテリアル株式会社 Inverter device and manufacturing method thereof
JP6638284B2 (en) * 2015-09-28 2020-01-29 三菱マテリアル株式会社 Substrate for power module with heat sink and power module
JP6137267B2 (en) 2015-10-08 2017-05-31 三菱マテリアル株式会社 Power module substrate with heat sink and power module
JP6452748B2 (en) * 2017-03-31 2019-01-16 株式会社三社電機製作所 Method for manufacturing laminated member

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JP2003007939A (en) * 2001-06-19 2003-01-10 Mitsubishi Materials Corp Ceramic circuit board with heat sink and manufacturing method therefor
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