JP4997841B2 - CONNECTION COMPONENT, SEMICONDUCTOR DEVICE USING THE SAME, CONNECTION COMPONENT MOUNTING STRUCTURE, AND CONNECTION COMPONENT MANUFACTURING METHOD AND MOUNTING METHOD - Google Patents

Description

  With regard to connection parts for connecting between substrates, in particular, the connection parts functioning as capacitors or resistors, reducing the mounting area and improving the mounting efficiency, the mounting structure of the semiconductor device using the same and the connection parts, and the connection The present invention relates to a component manufacturing method and a mounting method.

  In recent years, the number of parts used in electronic devices such as small portable devices typified by mobile phones with remarkable performance has increased greatly, and in order to meet the demand for miniaturization of electronic devices, the number of parts has been limited. It is required to store a large number of parts in the space. Electronic devices are composed of a large number of components such as semiconductor chips and passive elements (inductors, capacitors, resistors). In order to reduce the size of electronic devices, generally, of these components, components that can be integrated are mounted on a mounting substrate or a package and used as a module.

  However, due to the limitation due to the size of the mounting substrate, there are limits to mounting a large number of passive elements, and it is necessary to increase the mounting substrate, which increases the cost and mounting area, and is an obstacle to miniaturization. In order to achieve miniaturization and cost reduction, it is desirable that a small area can be mounted using small passive components.

  There is SiP (System in Package) technology in which a plurality of passive components and semiconductor chips are mounted in one package as a mounting technology to meet the demands for miniaturization and cost reduction. In addition, there is a wafer level process (WLP) technology that performs all processes such as rewiring and electrode terminal formation at the wafer level, and chip parts can be obtained at low cost by separating the wafer into individual pieces. Can do.

  Hereinafter, a conventional technique related to a semiconductor chip connection technique will be described.

  Patent Document 1 described later entitled “Semiconductor Device and Manufacturing Method and Mounting Method thereof” includes the following description.

  13A, FIG. 13B, FIG. 13C, and FIG. 13D are respectively FIG. 1, FIG. 2, FIG. 3, and FIG. 2 is a cross-sectional view for explaining the structure and manufacturing process of the semiconductor device according to FIG.

  As shown in FIG. 13A, the semiconductor device 100 includes a plurality of posts (columnar electrodes) 106 and also forms solder bumps and paste-like flux in order to form bumps used for BGA (Ball Grid Array) mounting. Is provided on the end face of each post 106 by, for example, printing, and a solder ball 110 to be described later is abbreviated on the end face of a required post 106 (second columnar electrode) among the posts 106. A spherical chip component 109 having the same height is placed on the other end face of the post 106 (first columnar electrode), for example, a solder ball 110 formed in a spherical shape using a chip mounter.

  Note that, in the bonding step between the solder ball 110 and the post 106, which will be described later, when bonding is possible without providing the cream solder 108 on the end surface of the post 106, the end surface of the post 106 on which the spherical chip component 109 is placed. The cream solder 108 may be provided only on the top.

  The spherical chip component 109 is generally the same as the solder ball 110 that uses a well-known chip component (for example, a passive component such as a resistor or a capacitor, or an active element such as a transistor) formed in a prismatic shape. Molded. The spherical chip component 109 includes, for example, an element portion 109a that forms a passive component such as a resistor and a capacitor, and a terminal T (conductive layer) that is connected to the element portion 109a and formed at both pole portions of the sphere. An insulating film having no wettability with solder is coated around the element portion 109a.

  Since the spherical chip component 109 placed on the end face of the required post 106 is spherical, as shown in FIG. 13A, the terminal T is not necessarily placed on the post 106 when placed using the chip mounter. It is not always arranged to face the end face. Therefore, the cream solder 108 provided on the end face of the post 106 is melted by solder reflow or oven heating in the state shown in FIG. Then, the melted solder repels the insulating film that coats the element portion 109a, thereby rotating the spherical chip component 109 itself so that the terminal T naturally faces the end face of the post 106, and thus the terminal T becomes the post 106. Joined with.

  At the same time, the solder ball 110 placed on the end face of the post 106 is melted, and the solder ball 110 is joined to the post 106. Note that the operation in which the molten solder repels the insulating film of the element portion 109a and the spherical chip component 109 itself rotates so that the terminal T faces the end face of the post 106 is called a self-alignment operation.

  When the terminal T of the spherical chip component 109 is bonded to the end face of the post 106 by self-alignment, the end face is provided with a bump by a normal solder ball 110 as shown in FIG. 13B. The semiconductor device 100 including the plurality of posts 106 (first columnar electrodes) and the plurality of posts 106 (second columnar electrodes) provided with bumps formed by the spherical chip component 109 is formed. The height of the spherical chip component 109 is preferably substantially the same as the height of the solder ball 110 in a state where it is melted and bonded onto the post 106.

  The semiconductor device 100 according to the first embodiment of Patent Document 1 can be mounted as follows. That is, the direction of the semiconductor device 100 is reversed so that each bump faces the connection pad 102 of the wiring board 200 as shown in FIG. 13C, and at least on the connection pad 102 facing the spherical chip component 109. The solder paste 108 is provided by, for example, printing, and then, as shown in FIG. 13D, each bump of the semiconductor device 100 is placed on the connection pad 102 of the wiring board 200, and in this state, solder reflow is performed. Each solder is melted by, for example, bonding the bumps of the semiconductor device 100 to the connection pads 102 of the wiring board 200.

  As described above, in the first embodiment, the spherical chip component 109 is directly mounted on the post 106 of the semiconductor device 100, and the post 106 and the wiring substrate of the semiconductor device 100 are mounted even when the spherical chip component 109 is mounted on the wiring substrate 200. Since the chip component 109 can be stacked and mounted between the 200 connection pads 102, the mounting area of the chip component which has been conventionally required can be omitted, and the mounting efficiency on the wiring board 200 can be improved. become. In addition, since the spherical chip component 109 is directly connected to the semiconductor device 100, the wiring distance between the chip component and the semiconductor device 100 can be minimized, so that the stray capacitance component and the like can be suppressed and the frequency characteristics of the circuit can be reduced. The effect that it can improve is also show | played.

  Japanese Patent Application Laid-Open No. 2004-259259, entitled “Connecting Parts”, has the following description.

  In the example of Patent Document 2, a description will be given using a connection part between a semiconductor chip (or a semiconductor package) and a wiring board as an example of a connection part between components constituting an electric circuit.

  FIGS. 14A and 14B are FIGS. 1 and 2 described in Patent Document 2, respectively. FIG. 14A shows a semiconductor chip (or a semiconductor package) mounted on a wiring board through connection parts. FIG. 14B is an explanatory diagram showing a manufacturing process of a spherical connecting component.

  Reference numeral 301 denotes a semiconductor chip (or a semiconductor package), which is resin-sealed except for the terminal surface 302. Reference numeral 303 denotes a mounting wiring board (printed wiring board), in which a signal layer 304 is formed on both surfaces of the board, and a power supply layer 305 and a ground layer 306 are formed inside. The signal layer 304 and the power supply layer 305 and the ground layer 306 are electrically connected by a through-hole plating layer 307. An interposer (substrate wiring board) may be used between the semiconductor chip (or semiconductor package) 301 and the connection component 308.

  The connection component 308 is composed of electronic components having passive elements such as resistors and capacitors, and active elements such as diodes, light emitting diodes, and transistors. As the connection component 308, a spherical shape such as a solder ball or a columnar shape such as a bump is preferably used. The connection component 308 forms a part of an electric circuit 309 formed between the semiconductor chip 301 side and the wiring substrate 303 side. The connection component 308 has a spherical shape or a column shape as the connection terminal. However, the connection portion of the electric circuit 309 is not limited to these shapes, and may be a sheet shape, for example. Further, ACF (anisotropic conductive resin), cream solder, or the like may be applied to the land portion on the wiring board 303 side.

  The connection component 308 includes a passive element and an active element, and is connected to the terminal portion of the semiconductor chip 301 and the wiring substrate 303 through upper and lower electrode portions. Hereinafter, the configuration of the connection component 308 will be described. (D) of FIG. 14 (B) shows the structure of the spherical connection component 308. FIG. A capacitor will be described as an example of the connection component 308. An insulating coating 311 using a dielectric or an insulator is formed on the surface of the spherical ceramic substrate 310. An electrode portion 312 is formed on the peripheral surface of the insulating coating 311.

  As another form of the connection component 308, an electrode portion 312 is formed on the surface of a spherical insulating substrate, and a passive element such as a resistor or an active element such as a diode is electrically connected to the electrode portion 312. Further, it may be incorporated in the insulating base material (see FIG. 14A).

Next, a manufacturing process of a capacitor as an example of the spherical connecting component 308 will be described with reference to (a) to (d) of FIG. In FIG. 14B (a), the ceramic substrate 310 is formed into a spherical shape. Specifically, a dielectric such as barium titanate (BaTiO ₃ ) or silicon dioxide (SiO ₂ ) is formed in a ball shape. Next, in (b) of FIG. 14B, an insulating coating 311, for example, a dielectric thin film such as polyimide is applied to the peripheral surface of the ceramic substrate 310 formed into a spherical shape. These steps (a) and (b) in FIG. 14B may be repeated a plurality of times.

  Next, in (c) of FIG. 14B, a photoresist 313 is applied or pasted on the insulating film 311 to cover a portion other than the electrode pattern. Next, in FIG. 14D, a metal layer is formed on the insulating film 311 not covered with the photoresist 313 by sputtering, solder plating, solder dip, or the like. Finally, the electrode portion 312 is formed by removing or peeling the photoresist 313 by etching. Thereby, a capacitor which is an example of the connection component (passive component) 308 is formed.

  As another example of the connection component (passive component) 308, in FIG. 14B (b), it is also possible to form a resistor if a nickel alloy is used as the substrate instead of the ceramic substrate 310. . In addition, a film made of one or a combination of two or more selected from dielectrics, insulators, magnetic substances, resistors, semiconductors, and conductors is formed on the surface of the substrate, and an electrode portion is formed on the peripheral surface of the film By doing so, it is also possible to manufacture electronic components such as resistors, capacitors, inductors, and semiconductors.

  By using the connection component of the invention of Patent Document 2, the number of discrete passive elements such as capacitors and resistors in electronic components such as semiconductor packages and wiring boards can be reduced, and high-density mounting becomes possible. Further, by making the terminal part a passive component or an active element, it is possible to reduce the bypass connection via the wiring pattern on the wiring board side, so that the wiring length of the passive component can be shortened.

  In addition, since a capacitor and a resistor can be arranged in the immediate vicinity of a semiconductor chip, a semiconductor package, or the like as a connection portion between components constituting the electric circuit, the electrical characteristics of the semiconductor chip, the semiconductor package, and the electric circuit can be improved. In addition, the inductance is lower than that of the discrete passive component, the resistance value and the capacitance value can be increased as compared with the built-in passive component built in the substrate, and the tolerance can be tightened.

  In addition, since the number of solder connection locations can be reduced as compared with the case where discrete passive components are used, connection reliability can be improved. Compared to internal passive components, various passive elements or active elements can be arranged in the connection section, so that the degree of freedom in circuit design can be secured, and the test method is simpler than internal passive components. Can be In addition, since the connection component can be applied not only to the connection terminal but also to a connection portion that constitutes an electric circuit, a highly versatile device can be supplied.

  Non-patent document 1 below entitled “Development of“ Energy Saving / Environmentally Harmonized Semiconductor Connection Technology (Ultra Fine Core Ball) ”” includes the following description.

  It was considered to provide a micro Cu core ball having a high thermal conductivity and low electrical resistance copper (Cu) as a core and a lead-free solder coating having a low melting point and excellent bonding property on the surface. As a result of various studies, it was found that high-density and energy-saving connection can be achieved even if the Cu core ball is made as fine as about 100 μmφ.

  We have developed a continuous Cu core ball manufacturing technology based on the uniform droplet vibration granulation method (UDS), which enables mass production of fine Cu balls of 300 μmφ or less with high precision and efficiency at the required diameter.

JP 2002-353275 A (paragraphs 0022 to 0027, FIGS. 1, 2, 3, and 4) JP 2003-124593 A (paragraphs 0009 to 0015, paragraph 0020, FIGS. 1 and 2) JRCM NEWS No. 230 (2005.12) (p.2-p.3)

  When mounting a connecting component such as a solder ball that simply performs electrical connection on a substrate such as a semiconductor substrate, the connecting component may be mounted on a terminal electrode of the substrate within a range of desired positional accuracy. When the connection component has a function of a passive element or an active element, the mounting efficiency can be improved. If the connection component incorporates the function of a passive element, this connection is made so that the direction of connection of the connection component, that is, the polarity after connection is accurately maintained in order for the passive element to operate normally. It is necessary to mount components on the board.

  That is, when the connection component has a function of a passive element or an active element, when mounting the connection component on the terminal electrode of the substrate, whichever of the two connection electrodes in the connection component mounted on the terminal electrode of the substrate It is necessary to identify and determine whether the electrode is an electrode and to secure the positional accuracy of the connection electrode thus identified and determined with respect to the terminal electrode of the substrate.

  Since the connection component containing the passive element or the active element for connecting between the substrates described in Patent Document 2 is spherical, the connection parts are arranged when the electrode portions provided above and below the connection component are arranged on the terminal electrodes of the substrate. Considering the polarities (positive and negative directions) of the upper and lower electrode parts in the component, there is a problem that the electrode parts must be identified and positioned on the terminal electrodes of the board. Further, when the connection component is arranged on the terminal electrode of the substrate, there is a problem that it is necessary to identify and determine what element the connection component contains and to position the terminal electrode of the substrate.

  In addition, in order for a connection component having the function of a passive element or an active element to be used at a practical level as a connection component for electrically connecting substrates, existing established production technology, existing production equipment Therefore, it should be possible to manufacture as a highly reliable part at low cost.

  In addition, the connection component having the function of the passive element or the active element requires a special mounting device for mounting the connection component on the substrate, or the electrical connection mode between the substrates is limited to a specific mode. If it is a thing, it will be less versatile. Therefore, a connection component having the function of a passive element or an active element can be manufactured at low cost, can be mounted on a substrate without requiring a special mounting device, and can be connected between substrates in a plurality of electrical connection modes. It is desirable to be able to connect.

  The present invention has been made in order to solve the above-described problems. The object of the present invention is to function as a capacitor or a resistor so that the substrates can be electrically connected, reducing the mounting area and mounting. It is an object of the present invention to provide a connection component, a semiconductor device using the connection component, a mounting structure for the connection component, a manufacturing method and a mounting method for the connection component, which can improve efficiency.

  That is, the present invention provides a first conductor layer, a dielectric layer or resistor layer deposited on the surface of the first conductor layer, and a surface of the dielectric layer or resistor layer. The deposited second conductor layer, the dielectric layer or resistor layer, the first conductor layer and the second conductor layer are partially exposed on the same surface. And a flat part, and the flat part constitutes an electrical connection surface.

  The present invention also relates to a semiconductor device in which a first substrate and a second substrate are electrically connected by the connection component described above.

  The present invention also relates to a connection component mounting structure in which the connection component is mounted on a substrate in the flat portion.

  The present invention also relates to a method for manufacturing the connection component, wherein the first step of forming a dielectric layer or a resistor layer on the surface of the first conductor layer material, and the dielectric layer or the resistor layer A second step of forming a second conductor layer on the surface of the substrate to form a laminate, and each of the dielectric layer or resistor layer, the first conductor layer, and the second conductor layer And a third step of removing a part of the substrate on one side and exposing the same on the same surface to form a flat portion to obtain a connection component.

  The present invention also provides a method for mounting the above-described connecting component, the first step of forming a dielectric layer or a resistor layer on the surface of the first conductor layer material, and the dielectric layer or the resistor layer. A second step of forming a second conductor layer on the surface of the substrate to form a laminate, and each of the dielectric layer or resistor layer, the first conductor layer, and the second conductor layer A third step of removing a part of the substrate on one side and exposing the same on the same surface to form a flat part to obtain a connection part; and a fourth step of mounting the connection part on the substrate after the flat part is formed. And a connecting component mounting method.

  According to the connecting component of the present invention, the dielectric layer or resistor layer deposited on the surface of the first conductor layer, and the first layer deposited on the surface of the dielectric layer or resistor layer. Two conductor layers, and a flat portion formed by exposing a part of each of the dielectric layer or resistor layer, the first conductor layer, and the second conductor layer on the same surface; Since the flat portion constitutes an electrical connection surface, it functions as a capacitor (capacitance element) or a resistor (resistance element), and the substrates can be electrically connected in a plurality of modes. The area can be reduced and the mounting efficiency can be improved.

  Further, according to the semiconductor device of the present invention, the first substrate in which the flat portion constituting the electrical connection surface of the connection component is mounted on the connection electrode of the first substrate, the second substrate, Flip-chip connection enables the connection parts having the same shape and configuration to be used, and the connection electrode pattern shape allows the two substrates to be electrically connected in a plurality of modes, thereby reducing the mounting area. Mounting efficiency can be improved.

  According to the connection component mounting structure of the present invention, the flat portion constituting the electrical connection surface of the connection component is mounted on the connection electrode on the substrate, and the usage form of the connection component is mounted. Since the connection parts having the same shape and configuration are used and the shape of the connection electrode pattern is changed, the connection parts can be used in different modes. The same connection component can be used in a plurality of modes.

  According to the method for manufacturing a connection component of the present invention, the dielectric layer or the resistor layer is formed on the surface of the first conductor layer material, and the second layer is formed on the surface of the dielectric layer or resistor layer. A conductor layer is formed to form a laminate, and a part of each of the dielectric layer or resistor layer, the first conductor layer, and the second conductor layer is removed on one side. Because it is exposed on the same surface and a flat part is formed to obtain a connection part, it is possible to manufacture connection parts with the same shape and configuration that can be used in multiple modes without requiring complicated processes and equipment. can do.

  According to the connection component mounting method of the present invention, the dielectric layer or the resistor layer is formed on the surface of the first conductor layer material, and the second layer is formed on the surface of the dielectric layer or the resistor layer. A conductor layer is formed to form a laminate, and a part of each of the dielectric layer or resistor layer, the first conductor layer, and the second conductor layer is removed on one side. It is exposed on the same surface, and a flat part is formed to obtain a connection part. After the flat part is formed, the flat part of the connection part is mounted on the substrate. Since the shape of the connecting electrode pattern of the substrate can be characterized, the connecting component can be used in different modes by changing the shape of the connecting electrode pattern, and the connecting component having the same shape and configuration Can be used in multiple modes It is possible to provide.

  In the connecting component of the present invention, the outer shape may be a spherical crown or columnar shape having a shape obtained by cutting out a part of the spherical body by a plane. Since the area of the dielectric layer or resistor layer in contact with the first and second conductive layers can be increased, a connecting component having a large capacitance or resistance can be realized as compared with a parallel plate type capacitor or resistor. can do.

  The melting temperature of the first conductor layer may be higher than the melting temperature of the second conductor layer. When the second conductive layer is in a molten state when flip-chip connection is performed between the substrates by the connecting component, the first conductive layer does not deform unless the dielectric layer or the resistor layer is in a molten state. The body layer can be deformed so that the capacitance or resistance does not change, the capacitance or resistance can be maintained at a constant value, and the gap distance between the substrates can also be maintained at a constant value.

  The second conductor layer may be a solder layer. A conventional connection device can be used when flip-chip connection between the substrates using the connection component, and a special connection device is not required.

  In the semiconductor device of the present invention, the first conductor layer of the flat portion and the electrode of the first substrate are electrically connected, and the second conductor layer and the electrode of the second substrate are Are preferably electrically connected. When flip-chip connection is performed between the substrates by the connecting component, the second conductor layer is in contact with the electrode of the second substrate in a molten state, and the flat portion of the first conductor layer is the first conductor layer. The electrodes of the substrate are in contact with each other in a plane, and electrical connection can be reliably performed, and the first substrate and the second substrate can be reliably electrically connected.

  In addition, the second conductor layer of the flat portion and the annular pad of the first substrate are electrically connected, and a capacitor or an electrode is provided between the electrode of the first substrate and the electrode of the second substrate. It is preferable that the registers are formed in series. The first substrate, the capacitor or resistor, and the second substrate can be electrically connected in series.

  In addition, the second conductor layer of the flat portion is electrically connected to the annular pad of the first substrate, and the first conductor layer is electrically insulated from the annular pad. And electrically connected to the electrode of the first substrate disposed in the annular pad, and a capacitor or a resistor is formed in series between the electrode of the first substrate and the electrode of the second substrate. It is good to have a configuration. The first substrate and the second substrate are electrically connected directly, and the first substrate, the capacitor or the resistor, and the second substrate are electrically connected in series, and the first substrate and the second substrate are electrically connected in series. The substrate and the second substrate can be connected in parallel by two electrical paths.

  In the connection component mounting structure of the present invention, it is preferable that the first conductor layer is electrically connected to the electrode of the substrate. The flat portion of the first conductor layer is in contact with the electrode of the substrate at a flat surface, and electrical connection can be reliably performed.

  The second conductor layer of the flat portion may be electrically connected to the annular pad of the substrate. The connecting parts can be used in different modes, and the connecting parts having the same shape and configuration can be used in a plurality of modes.

  In the connection component manufacturing method of the present invention, it is preferable that after the second step, the stacked body is arranged at a position corresponding to a mounting position of the connection component, and the third step is performed in this state. After the third step, the connection component in a state where the flat portion is formed in the stacked body is obtained at a position corresponding to the mounting position of the connection component, so that the connection component is disposed at a position corresponding to the mounting position. The held connection component can be used as it is when the substrate is mounted, and the connection component can be mounted on the substrate.

  In the connection component mounting method of the present invention, the laminate is held by a jig at a position corresponding to the mounting position of the connection component, and the jig is positioned on the substrate while holding the connection component after the third step. It is preferable that the connection component is mounted on the substrate. After the third step, the connection component in a state where the flat portion is formed in the laminated body at a position corresponding to the mounting position of the connection component is obtained in a state where the connection component is held by a jig. The jig with the component held at the position corresponding to the mounting position can be positioned on the substrate in a short time, and the connecting component can be mounted on the substrate.

  Hereinafter, embodiments according to the present invention will be described in detail with reference to the drawings.

  In the present embodiment, a dielectric layer or a resistor layer is formed as a first shell on a metal sphere serving as a central core, and a base metal layer is formed as a second shell on the dielectric layer or resistor layer, A laminated sphere is formed by forming a solder layer as a third shell on the underlying metal layer.

  A portion of this laminated sphere is polished flatly to form a flat portion where each of the metal sphere, dielectric layer or resistor layer, base metal layer, and solder layer is exposed on the same surface, It can be a connection part having a function of a capacitor or a resistor. The flat portion is formed by a part of each of the central core, the first shell, the second shell, and the third shell. The connecting component has an outer surface by the flat portion and the solder layer which is the third shell.

  The connecting component includes a first conductor layer composed of a first shell (metal sphere) having a flat part, a second conductor composed of a second shell (base metal layer) and a third shell (solder layer) having a flat part. The body layer is composed of three layers of a dielectric layer or a resistor layer sandwiched between the first conductor layer and the second conductor layer and having a flat portion.

  When the flip-chip connection is performed between the substrates by the connecting component, the capacitance or the resistance is not changed by the deformation of the first conductive layer so that the capacitance or the resistance is constant, and the gap distance between the substrates is In order to hold the substrate integrally, the material of the first conductor layer and the second conductor layer is selected so that the melting temperature of the first conductor layer is higher than the melting temperature of the second conductor layer. In addition, the material of the dielectric layer or resistor layer and the second conductor layer is selected so that the melting temperature of the dielectric layer or resistor layer is higher than the melting temperature of the second conductor layer. It is.

  Depending on the pattern shape of the pad formed on the board on which the connection component is mounted, the connection component should be used as a component that simply performs electrical connection, or a component that functions as a capacitor or resistor and that performs electrical connection. In addition, the connection parts having the same shape and configuration can connect the substrates in a plurality of electrical connection modes.

  That is, depending on the pattern shape of the pads on the board on which the connection component is mounted, the connection between the first board and the second board is (1) direct electrical connection between the first and second boards, 2) Electrical connection in which capacitors or resistors are connected in series (series connection of the first substrate, capacitor or resistor, and second substrate), (3) Connection of (1) and (2) (first The first board and the second board are connected in parallel by the direct electrical connection of the first and second boards and the series connection of the first board, the capacitor or the resistor, and the second board. This can be done in any manner. The usage form of the connection component can be characterized by the shape of the pattern of the connection terminal electrode (pad) of the substrate on which the connection component is mounted. Depending on the shape of the pad pattern, connecting parts having the same shape and configuration can be used in completely different applications.

  This connection component does not need to be conscious of its polarity, and the flat portion of the connection component can be mounted on the connection terminal electrode surface (pad) of the substrate. Since the connection component functions as a capacitor or a resistor and can electrically connect between the substrates, the capacitor or the resistor can be mounted on the pad, and the mounting space can be reduced. In addition, since the wiring distance can be shortened, stray capacitance can be suppressed and the electrical characteristics of the electric circuit can be improved.

  In the following description, a connection component having a capacitor function will be described. In each figure, for the sake of simplification, only the vicinity of the board on which the connection parts are mounted is shown for the board on which the connection parts are mounted.

  FIG. 1 is a diagram for explaining the structure of a connection component 4 functioning as a capacitor and a use state of the connection component 4 in an embodiment of the present invention. FIG. 1 (A) is a perspective view of the connection component 4. 1B is a cross-sectional view taken along the xy plane or the yz plane at a connection portion between the substrates. In addition, the cross-sectional view in each figure shown below is a cross-sectional view by a plane passing through the central axis of the metal sphere as the central core or the central axis of the metal column as the core, as in FIG. 1B. .

  As shown in FIG. 1A, the connecting component 4 having the function of a capacitor has a dielectric layer (first shell) 12 and a base metal layer (second shell) on a metal sphere (central core) 10 in order. 14. A part of a laminated sphere (described later) on which a solder layer (third shell) 16 is formed can be manufactured by polishing it flatly to form a flat part. The connection component 4 has a spherical crown shape in which a part of the laminated sphere is cut out by a plane. A part of each of the metal sphere 10, the dielectric layer 12, the base metal layer 14, and the solder layer 16 is exposed on the same surface in the flat portion remaining after being cut off by the plane. The connection component 4 has an outer surface composed of this flat portion and a spherical surface formed by the solder layer 16.

  As shown in FIG. 1B, the flat portion of the connection component 4 is mounted on the first substrate 20. At this time, the connection component 4 is arranged such that the metal ball 10 of the connection component 4 and the flat portion of the solder layer 16 correspond to each of the circular pad 28 and the annular pad 30 formed on the first substrate 20. And the first substrate 20 are positioned. The circular pad 28 and the annular pad 30 formed on the first substrate 20 are electrically separated by an annular insulating layer 32 (a part of which may be composed of an air layer). Yes. In addition, the circular pad 28 of the first substrate 20 is electrically connected to the circular columnar electrode 24.

  The first substrate 20 on which the connection component 4 is mounted and the second substrate 22 are electrically connected by flip chip connection. The circular pad 26 formed on the second substrate 22 is electrically connected to the spherical portion of the solder layer 16. Note that the circular pad 26 of the second substrate 22 is electrically connected to the circular columnar electrode 24.

FIG. 2 is a flowchart for explaining a manufacturing process and a mounting process on the substrate of the connection component 4 functioning as a capacitor in the embodiment of the present invention.
It is.

  3A and 3B are cross-sectional views illustrating a manufacturing process of the connection component 4 functioning as a capacitor in the embodiment of the present invention. FIG. 3A is a formation of a dielectric layer, and FIG. FIG. 3C is a diagram for explaining the formation of a solder layer.

  FIG. 4 is a cross-sectional view for explaining a manufacturing process and a mounting process on the substrate of the connection component 4 functioning as a capacitor in the embodiment of the present invention. FIG. FIG. 4B is a cross-sectional view for explaining mounting on a substrate, and FIG.

  FIG. 5 is a diagram for explaining connection pads and columnar electrodes formed on a substrate on which the connection component 4 functioning as a capacitor in the embodiment of the present invention is mounted. FIG. 5 (A) is a plan view, FIG. FIG. 5B is a cross-sectional view, and FIG. 5C is a cross-sectional view showing a state in which the connection component 4 is mounted on the substrate.

  In FIGS. 4 and 5, as described above, only the vicinity of the first substrate 20 where the two connection components 4 are mounted is shown in order to simplify the drawing.

  Hereinafter, the manufacturing process of the connection component 4 functioning as a capacitor and the mounting process of the connection component 4 on the substrate will be described with reference to FIGS. 3 to 5 for the steps S1 to S6 shown in FIG.

  S1: A dielectric layer serving as a first shell is formed on the surface of a metal sphere serving as a central nucleus.

As shown in FIG. 3A, a copper (Cu) sphere 10 of 200 μmφ to 300 μmφ is prepared (commercially available product can be purchased), and 100 nm to 1000 nm (0.1 μm to 1 μm) by a reactive sputtering process. ) TaO _x is deposited on the entire surface of the Cu sphere 10 to form the dielectric layer 12. In this formation, it is preferable to form TaO _x by sputtering while swinging the Cu sphere 10 in the sputtering chamber so that the film thickness of the dielectric layer 12 on the Cu sphere 10 becomes uniform. For example, Ta ₂ O ₅ (relative dielectric constant is 27.9) is formed as TaO _x .

The dielectric layer 12 is made of, for example, TiO ₂ having a relative permittivity of 100, Li ₂ TaO _{3 having} a relative permittivity of 39 to 43, AlN having a relative permittivity of 8.8, or a relative permittivity instead of TaO _x. 9.5 Al ₂ O ₃ , SiO ₂ having a relative dielectric constant of 3.9, SiON having a relative dielectric constant of 6.5, Li ₂ TiO ₃ having a relative dielectric constant of about 50, and a relative dielectric constant of about 7.5 Si ₃ N ₄ , etc. can also be used.

  S2: A base metal layer serving as a second shell is formed on the surface of the dielectric layer.

  Next, as shown in FIG. 3B, the thickness of 3 μm to 3 μm is formed on the dielectric layer 12 by electroless plating while swinging the Cu sphere 10 on which the dielectric layer 12 is formed in the plating tank. 7 μm of nickel is formed as the base metal layer 14.

  S3: A solder layer as a third shell is formed on the surface of the base metal layer, and a laminated sphere composed of the central core, the first shell, the second shell, and the third shell is completed.

  Next, as shown in FIG. 3C, a solder layer 16 having a thickness of 230 μm to 280 μm is formed on the base metal layer 14 by electrolytic plating. Here, the solder layer 16 is composed of SnAg solder (having a composition of Sn98% and Ag2%, which is also indicated as 0.98Sn0.02Ag). It is desirable to swing the Cu sphere on which the base metal layer 14 is formed in the plating tank shown in FIG. 3B so that the film thickness of the solder plating becomes uniform.

  As described above, the laminated sphere 2 including the metal sphere 10, the dielectric layer 12, the base electrode layer 14, and the solder layer 16 is formed. The size of the laminated sphere 2 is 760 μmφ if the thicknesses of the dielectric layer 12 and the base metal layer 14 are ignored. The connection component 4 according to the present embodiment is formed from the laminated sphere 2.

  S4: A flat portion where a part of each of the central core, the first shell, and the second shell is exposed is formed by polishing.

  For example, the laminated sphere 2 is sucked and held in the suction hole 44 using the jig 42 in which the suction hole 44 having a diameter of 300 μmφ to 500 μmφ is formed. In this jig 42, the arrangement positions of the suction holes 44 correspond to the arrangement positions of the connection components 4 mounted on the substrate.

  Next, as shown in FIG. 4A, for example, by using a polishing machine (sander) having a polishing belt 40 coated with abrasive grains of a predetermined particle size, the laminated sphere 2 is polished, A flat part is formed. The laminated sphere 2 is pressed against the polishing belt 40 rotated by the roller 43, and a part thereof is polished by 300 μm from one side. By this polishing, a flat portion is formed in which a part of each of the central core, the first shell, the second shell, and the third shell is exposed on the same surface.

  This polishing is preferably performed in two stages, and rough polishing is performed with # 100 to # 400 polishing abrasive grains, and then final polishing is preferably performed with # 1000 to # 3000 polishing abrasive grains. After the polishing is completed, the abrasive particles are preferably removed by washing or air blowing.

  In this way, a flat portion is formed in which a part of each of the metal sphere 10, the dielectric layer 12, the base metal layer 14, and the solder layer 16 is exposed on the same surface, and the connection component 4 is completed. At this time, the connection component 4 is in a state of being held by the jig 42 with the flat portion being downward.

  S5: The flat part formed by polishing is mounted on the substrate.

  Next, as shown in FIG. 4B, the connection component 4 is mounted on the first substrate 20 while being sucked and held by the jig 42. Solder cream is printed on the pads of the first substrate 20 on which the connection component 4 is mounted.

  On the left side of the first substrate 20, a circular pad 28 and a columnar electrode 24 having a circular cross section electrically connected thereto, an annular pad 30, and a wiring pad electrically connected thereto An annular insulating layer 32 that electrically insulates the electrode 36, the circular pad 28, and the annular pad 30 is formed.

  Further, on the right side of the first substrate 20, a circular pad 28, a columnar electrode 24 having a circular cross section electrically connected thereto, and a circular pad 26 are formed.

  The pad electrode 36 for wiring can be used for any purpose. A pad electrode 36 for wiring that is electrically connected to the circular pad 26 may be provided.

  In the example shown in FIG. 4B, the flat metal ball 10 and the circular pad 28 of the connection component 4, the solder layer 16 of the flat portion of the connection component 4 and the annular pad 30 correspond to each other. The jig 42 is positioned with respect to the first substrate 20 so that the metal balls 10 and the solder layer 16 in the flat part of the connection component 4 correspond to the circular pad 26. When the suction of the connection component 4 is released and the jig 42 is removed, the mounting of the connection component 4 on the first substrate 20 is completed.

  The connecting component 4 can be held using the jig 42 and mounted on the electrode terminal (pad) formed on the wafer (substrate) by the WLP (Wafer-level Process) technique. Further, the connection component 4 may be mounted on a pad of a chip that has been separated.

  S6: Soldering between the conductor of the flat part and the conductor (pad) of the substrate.

  Next, as shown in FIG. 4C, the conductor of the flat portion of the connection component 4 and the pad of the substrate are soldered by reflow. As a result of the reflow process, the metal ball 10 and the circular pad 28 in the flat part of the connection component 4, the solder layer 16 and the annular pad 30 in the flat part of the connection component 4 are respectively soldered, and the connection component The flat metal balls 10 and the solder layer 16 and the circular pads 26 are soldered.

  The first substrate 20 on which the connection component 4 is mounted obtained by the above process is used for flip chip connection with the second substrate 22.

  Here, the connection pads formed on the first substrate 20 on which the connection component 4 is mounted will be described.

  As shown in FIGS. 5A and 5B, a circular pad 28 and an annular pad 30 are formed on the surface of the first substrate 20 with an annular insulating layer 32 interposed therebetween. A wiring pad 36 is formed to connect to the annular pad 30, and a circular pad 26 is formed. A columnar electrode having a circular cross section is formed through the first substrate 20 and the circular pads 26 and 28 are electrically connected.

  As described above, the connection component 4 is mounted and soldered to the connection pads shown in FIGS. 5 (A) and 5 (B) as shown in FIG. 5 (C).

  FIGS. 6A and 6B are cross-sectional views for explaining a connection form by the connection component 4 functioning as a capacitor in the embodiment of the present invention. FIG. 6A is a first connection form, and FIG. 6B is a second connection form. It is a figure which shows a connection form.

  FIG. 7 is a diagram for explaining a connection form by the connection component 4 functioning as a capacitor in the embodiment of the present invention. FIG. 7A is a cross-sectional view and a plan view showing the third connection form. B) is a sectional view showing a fourth connection configuration.

  As shown in FIG. 6A, the flat part of the connection component 4 and the flat part of the first substrate 20 are in contact with each other, and the flat part of the metal ball 10 is connected to the circular pad 28 of the first substrate 20 and the solder. The flat portion of the layer 16 and the annular pad 30 of the first substrate 20 are electrically connected, and the spherical portion of the solder layer 16 and the circular pad 26 of the second substrate 22 are electrically connected. Is done. As a result, a capacitor is formed between the circular pad 28 of the first substrate 20 and the circular pad 26 of the second substrate 22, and the first substrate 20 and the second substrate 22 are electrically connected. Connected.

  As shown in FIG. 6B, the flat portion of the connection component 4 and the flat portion of the first substrate 20 are in contact with each other, and the flat portion of the metal ball 10 is electrically connected to the circular pad 26 of the first substrate 20. The spherical surface portion of the solder layer 16 and the circular pad 26 of the second substrate are electrically connected. As a result, the first substrate 20 and the second substrate 22 are directly electrically connected.

  As shown in (a), (b), (c), and (d) of FIG. 7A, the flat part of the connection component 4 and the flat part of the first substrate 20 are in contact with each other, and the metal ball 10 In the flat portion, the circular pad 28 of the first substrate 20, the flat portion of the solder layer 16 and the annular pad 30 of the first substrate 20 are electrically connected to each other, and the spherical portion of the solder layer 16 and the The circular pad 26 of the second substrate is electrically connected, and the columnar electrode having a circular cross section is electrically connected to the circular pad 28 and grounded.

  As a result, a capacitor is formed between the circular pad 28 of the first substrate 20 and the circular pad 26 of the second substrate 22, and the annular pad 30 and the second substrate of the first substrate 20. Twenty-two circular pads 26 are electrically connected. The electrode on one side of the capacitor is grounded. Therefore, the first substrate and the second substrate are the first connection between the circular pad 28 and the circular pad 26 via the capacitor, the second connection connecting the annular pad 30 and the circular pad 26. Are connected in parallel.

  As shown in FIG. 7 (B), in the example shown in FIG. 7 (A), the electrode on one side of the capacitor is grounded, but it is generally composed of active elements, passive elements, etc. without grounding. The electronic circuit 38 may be connected.

  In the example shown in FIGS. 6 and 7, the circular electrodes 26 and 28 are connected to the columnar electrodes 24 having a circular cross section, and the annular pad 30 is connected to the wiring pad electrode 36 and the circular columnar columns. The electrode 34 is connected. The annular columnar electrode 34 may be formed so as not to form a completely closed ring. In addition, the circular columnar electrode 24 and the annular columnar electrode 34 may be formed inside the hole opened in the first substrate 20 via an insulating layer.

  FIGS. 8A and 8B are diagrams showing examples of dimensions of the connecting component 4 that functions as a capacitor in the embodiment of the present invention, FIG. 8A is a perspective view, and FIG. 8B is a cross-sectional view.

  As shown in FIG. 8, R3, R2, and R1 respectively indicate the radius of the laminated sphere 2, the radius of the base layer 14, and the radius of the central sphere 10 in FIG. In the example shown in FIG. 8, the dimensions of each layer of the connection component 4 are as follows: the radius of the metal sphere 10 is 250 μm, the thickness of the dielectric layer 12 is 0.5 μm, the thickness of the base metal layer 14 is 5 μm, and the thickness 249 of the solder layer 16. The diameter of the laminated sphere 2 before forming the flat part of the connecting component 4 is 760 μm.

  The connection component 4 is formed by removing about 1 / 2.5 (300 μm) of the diameter of the laminated sphere 2 by polishing and forming a flat portion having a diameter of 743 μm as a circle. In addition, about 1/3 of the diameter of the laminated sphere 2 may be removed by polishing to form a flat portion.

  FIG. 9 is a diagram showing a dimension example of a connection pad formed on a substrate on which the connection component 4 functioning as a capacitor in the embodiment of the present invention is mounted. FIG. 9 (A) is a plan view, and FIG. B) is a cross-sectional view.

  The connection component 4 shown in FIG. 8 is mounted on the first substrate 20 on which the connection pads as shown in FIG. 9 are formed. The shape of the connection pad shown in FIG. 9 is the same as that of the left connection pad shown in FIG.

  FIG. 10 is a diagram for explaining a simulation result of the capacitance of the connection component 4 functioning as a capacitor in the embodiment of the present invention. FIG. 10A shows a change with respect to the dielectric constant of the dielectric layer of the capacitor. B) is a diagram showing a change with respect to the thickness of the dielectric layer of the capacitor. The simulation was performed on the connection component 4 shown in FIG.

  The capacitance calculation result by simulation is obtained by inputting the relative permittivity, thickness, and shape of the dielectric layer 12 to create a size in a three-dimensional shape, and a three-dimensional quasi-electrostatic magnetic field analysis simulator (an This is an analysis result obtained using Q3D Ver 6.01 of Soft Corp.).

  As shown in FIG. 10A, when the thickness of the dielectric layer 12 is set to a constant value of 0.5 μm and the material of the dielectric layer 12 is changed, the capacitance changes with respect to the relative dielectric constant of the dielectric layer 12. Is increased by 8.8 pF relative to an increase of 1.

  As shown in FIG. 10B, when the material of the dielectric layer 12 is constant, that is, when the relative dielectric constant is constant and the thickness of the dielectric layer 12 is changed, the thickness of the dielectric layer 12 is changed. The change in capacitance with respect to the value is that the capacitance is reduced by 60% when the thickness of the dielectric layer 12 is doubled.

  As shown in FIG. 1, the connection component 4 is formed by polishing a part of the laminated sphere 2 shown in FIG. 3C to form a flat portion, and a metal sphere 10, a dielectric layer 12, a base metal layer 14, a solder Since each part of the layer 16 has a structure exposed at the flat part, the dielectric layer 12 in the connection component 4 forms a part of a spherical shell, and the connection component 4 is compared with a parallel plate type capacitor. , Having a dielectric layer with a larger area, enabling higher capacity. For example, as shown in FIG. 10, when the relative dielectric constant of the dielectric layer 12 is 3, the dielectric constant is 26.2 pF. When the ratio is 7, it is possible to obtain the connection component 4 having a capacitance of 61.2.

  FIG. 11 is a diagram for explaining a modified example of the manufacturing process of the connection component 4 functioning as a capacitor in the embodiment of the present invention. FIG. 11 (A) shows fixing to a fixing resin (wax), and FIG. FIG. 11B is a diagram showing formation of a flat portion by polishing, and FIG. 11C is a diagram showing removal of a fixing resin (wax) and cleaning.

  As shown in FIG. 11 (A), a large number of the laminated spheres 2 shown in FIG. 3 (C) are arranged on the smooth surface of a smooth surface jig 48 having a smooth surface, and fixed in a state where the laminated sphere 2 is in contact with the smooth surface. It is fixed to a smooth surface jig 48 using a resin 46 (a wax having a property of being softened by heating and a property of being easily dissolved in an organic solvent) 46.

  Next, as shown in FIG. 11B, the laminated sphere 2 is polished so as to leave a desired height from the smooth surface. Next, the fixing resin 46 is removed by washing, and the connecting component 4 having the same structure as described above and having a flat portion and a desired height can be formed. In this way, since a large number of the laminated spheres 2 are polished simultaneously, a large number of connecting parts 4 can be manufactured with high accuracy and low cost in a single work process.

  It goes without saying that the connection component 4 thus formed can be sucked and held by the jig 42 shown in FIG. 4A and mounted on the first substrate 20 in the same manner as described above.

  In the above description, the connection component 4 having a spherical crown shape formed based on the laminated sphere 2 shown in FIG. 3C has been described, but the shape of the connection component 4 is not limited to the spherical crown shape. .

  The connection component 4 includes a first conductor layer serving as a nucleus composed of a high melting point metal, a dielectric layer or a resistor layer formed on the surface of the first conductor layer, and the dielectric The second conductor layer formed on the surface of the layer or the resistor layer, the dielectric layer or the resistor layer, the first conductor layer, and a part of each of the second conductor layers are the same A flat portion exposed on the surface, and has an outer surface including a surface of the flat portion and a surface excluding the flat portion of the second conductor layer, and the flat portion constitutes an electrical connection surface If so, as described above, the connection parts 4 having the same shape and configuration can be used to electrically connect the two substrates in a plurality of modes, so that the shape of the connection parts 4 is aligned with the axis of the column. The vertical section may be an arbitrary shape, for example, a columnar body such as a cylinder or a prism.

  FIG. 12 is a cross-sectional view illustrating a modified example of connection component 4 functioning as a capacitor in the embodiment of the present invention.

  As shown in FIG. 12, the columnar connecting component 4 is formed on the dielectric layer 52 formed on the metal column 50 and having a cross section perpendicular to the axis of the column having an arbitrary shape. The base metal layer 54 formed, the solder layer 56 formed on the base metal layer 54, and the metal pillar 50, the dielectric layer 52, the base metal layer 54, and a part of the solder layer 56 are on the same plane. And the flat portion exposed to the surface. The flat portion serves as an electrical connection surface with the first substrate 20, and the connection component 4 has an outer surface including a flat portion surface and a solder layer 56 surface excluding the flat portion.

  As shown on the left side of the first substrate 20 shown in FIG. 12, the metal pillar 50 and the solder layer 56 exposed on the flat portion are electrically connected to the pad 58 and the annular pad 60 formed on the first substrate 20, respectively. Connected. The pad 58 and the annular pad 60 are electrically separated by an annular insulating layer 62.

  Further, as shown on the right side of the first substrate 20 shown in FIG. 12, the metal pillar 50 and the solder layer 56 are electrically connected to the pad 66. A columnar electrode 64 is electrically connected to the pads 58 and 66.

  The shapes of the pad 58, the annular pad 60, the columnar electrode 64, and the pad 66 may be similar to the outer shape of the flat portion of the columnar connection component 4.

  Further, by using the well-known multilayer film forming technique, the metal pillar 50, the dielectric layer 52, the base metal layer 54, and the solder layer 56 are sequentially formed on the surface of the first substrate 20, The columnar connection component 4 can be formed on the connection pad formed on the first substrate 20.

  Alternatively, the metal layer 50, the base metal layer 54, and the solder layer 56 are sequentially formed on the metal column 50 to form a columnar laminated body, and the columnar laminated body is polished to obtain the metal column 50, the electric body layer 52, A part of each of the base metal layer 54 and the solder layer 56 may form a flat portion exposed on the same surface to form the columnar connection component 4.

  In the above description, the first substrate 20 and the second substrate 22 are semiconductor chip substrates, but it goes without saying that one of these substrates may be a mounting substrate made of an inorganic or organic material.

  As described above, the connection component manufacturing method does not require special processes and equipment, and can use conventional equipment to manufacture the connection parts at low cost. For mounting, a conventional mounting device can be used.

  In the above description, the connection component having a capacitor function has been described. However, it goes without saying that a connection component having a resistor (resistive element) function can be obtained by replacing the dielectric layer with a resistor layer. Yes.

  In addition, a plurality of dielectric layers are formed, and include, for example, a metal sphere 10, a first dielectric layer 12, a base electrode layer 14, an intermediate electrode layer, a second dielectric layer 12, a base electrode layer 14, and a solder layer 16. By forming the laminated sphere 2 and forming the flat portion in the same manner as in the above-described embodiment, it is possible to form the connection component 4 having two capacitors connected in series. In this configuration, it goes without saying that the connection component 4 having two resistors connected in series can be formed by replacing the dielectric layer with a resistor layer.

  Furthermore, it is possible to form a connection component 4 that has a dielectric layer and a resistor layer, and in which a capacitor and a resistor are connected in series. For example, the laminated sphere 2 including the metal sphere 10, the dielectric layer 12, the base electrode layer 14, the intermediate electrode layer, the resistor layer, the base electrode layer 14, and the solder layer 16 is formed, and the same as in the above-described embodiment. Thus, by forming the flat portion, the connection component 4 having capacitors and resistors connected in series can be formed. The positions and the number of layers for forming the dielectric layer 12 and the resistor layer are arbitrary.

  The metal sphere 10 only needs to be formed of a metal or alloy having a high melting point. In addition to the above-mentioned Cu (melting point 1083 ° C.), for example, Au (melting point 1063 ° C.), Fe (melting point 1535 ° C.), Ag (melting point 1980). Alloys containing these metals can be used.

  The solder layer 16 may be formed of a metal layer made of a low melting point metal or alloy. In addition to the above, for example, Sn, Sn—Ag, Sn—Cu, Sn—Au, Sn—Bi, Sn—In Sn-Zn, Sn-Sb, Sn-Ag-Cu, Sn-Ag-Sb, Sn-Ag-Cu-Sb, Sn-Ag-Bi, Sn-Bi-In, Sn-Bi-Zn, Sn-Zn A metal such as In—Bi, Cu, In, Bi—In, In—Au, In—Ag, Au—Ge, or Au, or a solder containing Pb can be used.

The dielectric layer 12 can be formed of, for example, the other metal oxide dielectric material or nitride dielectric material described above. For example, Ta ₂ O ₃ , ZrO ₂ , HfO ₂ , Y ₂ O ₃ , La ₂ O ₃ , CeO ₂ , PrO ₂ , Gd ₂ O ₃ , Sc ₂ O ₃ , LaAlO ₃ , ZrTiO ₄ , (Zr, Sr) TiO ₄ , SrZrO ₄ , LaAl ₃ O ₄ , SrTiO ₃ , BaSrTiO _3, lead titanate, titanium / lead zirconate (PZT), lead titanate / bismuth, potassium niobate, lithium niobate, strontium barium niobate, Various materials such as strontium niobate, potassium tantalate, tantalum / potassium niobate, TiN, TaN, and WN can be used.

  The dielectric layer 12 may be a single layer formed from one kind of material, or a plurality of layers formed by laminating a plurality of kinds of materials, and may be configured to obtain a required dielectric constant.

  The pad electrodes 26, 28, 30, and 36 having an arbitrary shape can be formed of, for example, Au, Al, Cu, or an alloy containing these metals. It is electrically connected to the element or is electrically independent.

  As mentioned above, although embodiment of this invention was described, this invention is not limited to the above-mentioned embodiment, Various deformation | transformation based on the technical idea of this invention is possible.

  As described above, the present invention is suitable as a connection component for connecting between substrates, functions as a capacitor or a resistor, can reduce a mounting area and improve mounting efficiency, and can be used in a plurality of modes. Can be provided.

It is a figure explaining the structure and use condition of the connection component which functions as a capacitor in embodiment of this invention. It is a flowchart explaining the manufacturing process of the connection component which functions as a capacitor, and the mounting process to a board | substrate same as the above. It is. It is sectional drawing explaining the manufacturing process of the connection component which functions as a capacitor same as the above. It is sectional drawing explaining the manufacturing process of the connection components which function as a capacitor, and the mounting process to a board | substrate same as the above. It is a figure explaining the connection pad and columnar electrode which are formed in the board | substrate which mounts the connection component which functions as a capacitor same as the above. It is sectional drawing explaining the connection form by the connection component which functions as a capacitor same as the above. It is sectional drawing explaining the connection form by the connection component which functions as a capacitor same as the above. It is a figure which shows the example of a dimension of the connection component which functions as a capacitor same as the above. It is a figure which shows the example of a dimension of the pad for a connection formed in the board | substrate which mounts the connection component which functions as a capacitor same as the above. It is a figure explaining the result of the simulation of the capacitance of the connection component which functions as a capacitor same as the above. It is a figure explaining the modification of the manufacturing process of the connection component which functions as a capacitor same as the above. It is sectional drawing explaining the modification of the connection component which functions as a capacitor same as the above. It is sectional drawing explaining the spherical chip component in a prior art. It is sectional drawing explaining a spherical connection component same as the above.

Explanation of symbols

2 ... Laminated sphere, 4 ... Connection component, 10 ... Metal sphere, 12 ... Dielectric layer, 14 ... Underlying metal layer,
16 ... solder layer, 20 ... first substrate, 22 ... second substrate, 24 ... circular columnar electrode,
26, 28 ... circular pad, 30 ... annular pad, 32 ... annular insulating layer,
34 ... circular columnar electrode, 36 ... pad electrode for wiring, 38 ... general electronic circuit,
40 ... polishing belt, 42 ... jig, 43 ... roller, 44 ... suction hole, 46 ... fixing resin,
48 ... smooth surface jig, 50 ... metal pillar, 52 ... dielectric layer, 54 ... base metal layer, 56 ... solder layer, 58, 66 ... pad, 60 ... annular pad, 62 ... annular insulating layer, 64 ... columnar electrode

Claims (17)

A first conductor layer made of metal and serving as a nucleus ;
A dielectric layer or resistor layer formed as a first shell covering the surface of the first conductor layer;
A second conductor layer formed as a second shell covering the surface of the dielectric layer or resistor layer;
A flat portion formed by exposing a part of each of the dielectric layer or resistor layer, the first conductor layer, and the second conductor layer on the same plane, and the flat portion There constitutes an electrical connection surface, that acts as a resistance element having a capacitive element or the resistor layer having a dielectric layer, connecting parts.   The connecting part according to claim 1, wherein the outer shape is a spherical crown having a shape obtained by cutting out a part of a spherical body by a plane or a columnar body.   The connection component according to claim 1, wherein a melting temperature of the first conductor layer is higher than a melting temperature of the second conductor layer. The connection component according to claim 1, wherein a melting temperature of the dielectric layer or the resistor layer is higher than a melting temperature of the second conductor layer.   The connection component according to claim 1, wherein the second conductor layer is a solder layer. The second conductor layer is composed of a base metal layer formed as a shell covering the surface of the dielectric layer or resistor layer, and a solder layer formed as a shell covering the surface of the base metal layer. The connection component according to claim 1. The connecting component according to any one of claims 1 to 6, the semiconductor device and the first substrate and the second substrate are electrically connected. The first conductor layer of the flat portion and the electrode of the first substrate are electrically connected, and the second conductor layer and the electrode of the second substrate are electrically connected. The semiconductor device according to claim 7 . The second conductor layer of the flat portion and the annular pad of the first substrate are electrically connected, and a capacitor or a resistor is provided between the electrode of the first substrate and the electrode of the second substrate. 9. The semiconductor device according to claim 8 , wherein are formed in series. In a state where the second conductor layer of the flat portion and the annular pad of the first substrate are electrically connected, and the first conductor layer is electrically insulated from the annular pad. A capacitor or a resistor is formed in series between the electrode of the first substrate and the electrode of the second substrate, which is electrically connected to the electrode of the first substrate disposed in the annular pad. The semiconductor device according to claim 8 . The connection component mounting structure in which the connection component according to any one of claims 1 to 6 is mounted on a substrate in the flat portion. The connection component mounting structure according to claim 11 , wherein the first conductor layer is electrically connected to an electrode of the substrate. The connection component mounting structure according to claim 11 , wherein the second conductor layer of the flat portion and the annular pad of the substrate are electrically connected. It is a manufacturing method of the connection parts given in any 1 paragraph of Claims 1-6 ,
A first step of forming a dielectric layer or a resistor layer as a first shell covering the surface of the first conductor layer material made of metal and serving as a nucleus ;
A second step of forming a laminate by forming a second conductor layer as a second shell covering the surface of the dielectric layer or resistor layer;
Removing a part of each of the dielectric layer or the resistor layer, the first conductor layer, and the second conductor layer on one side to expose the same layer to form a flat portion ; Having the dielectric layer
And a third step of obtaining a connection component that functions as a resistance element having the capacitor element or the resistor layer . The method of manufacturing a connection component according to claim 14 , wherein after the second step, the stacked body is disposed at a position corresponding to a mounting position of the connection component, and the third step is performed in this state. A mounting method of a connection component according to claim 1, any one of claims 6,
A first step of forming a dielectric layer or a resistor layer as a first shell covering the surface of the first conductor layer material made of metal and serving as a nucleus ;
A second step of forming a laminate by forming a second conductor layer as a second shell covering the surface of the dielectric layer or resistor layer;
Removing a part of each of the dielectric layer or the resistor layer, the first conductor layer, and the second conductor layer on one side to expose the same layer to form a flat portion ; Having the dielectric layer
A third step of obtaining a connecting component that functions as a capacitor element or a resistor element having the resistor layer ;
And a fourth step of mounting the connection component on the substrate after forming the flat portion. The laminated body is held by a jig at a position corresponding to the mounting position of the connection component, and after the third step, the jig is positioned on the substrate while holding the connection component, and the connection component is placed on the substrate. The connecting component mounting method according to claim 16 , wherein:

Images