JP4994061B2 - Integrated structure of translucent CIS thin film solar cell module and method of manufacturing the same - Google Patents

Description

  The present invention relates to a light-transmitting CIS thin film solar cell module having an integrated structure and a method for manufacturing the same.

  A CIS-based thin-film solar cell, which is a basic component of an existing CIS-based thin-film solar cell module, has an alkali barrier layer 2B and a metal back electrode layer (in general, Mo) 2C, p-type CIS-based light absorption layer 2D, n-type high-resistance buffer layer 2E, and n-type window layer (transparent conductive film) 2F are sequentially stacked in this order. Since the back electrode layer and the p-type CIS light absorption layer made of metal are not light transmissive, light is blocked at this portion, and the light transmissive property cannot be obtained in the existing CIS thin film solar cell module.

  In an amorphous silicon solar cell module, in order to obtain translucency, a light transmission window is provided (for example, refer to Patent Document 1). In an amorphous silicon thin film solar cell module, formed on a light transmission window portion. The obtained photoelectric conversion part and back electrode are removed by etching or laser removal or the like to obtain translucency (for example, see Patent Document 2), and a translucent part that transmits part of incident light. In order to provide, the photoelectric conversion part is removed by etching, or the photoelectric conversion part and the back electrode are partially removed simultaneously by a laser scribing method (for example, see Patent Document 3), and further a solar cell module is configured. The solar cell to be manufactured is a single crystal silicon solar cell, a polycrystalline silicon solar cell, an amorphous silicon solar cell, or a compound semiconductor solar cell. The solar cell is provided multiple translucent small holes, which views the opposite side is observable through this large number of small holes (e.g., see Patent Document 4.), And the like.

JP 2002-299666 A JP 2002-299663 A JP 2002-45394 A JP 2005-317665 A

  Although the thing of the said patent documents 1-4 is related with a translucent solar cell module, since a manufacturing method is complicated, manufacturing cost increases and translucency is ensured, power generation performance is sacrificed. There is a problem.

  The present invention solves the above-mentioned problems, and the object of the present invention is to reduce the power generation performance without significantly increasing the manufacturing cost without significantly changing the existing CIS-based thin film solar cell manufacturing method. It is to ensure translucency and suppress application as a building material including a window material.

  (1) The present invention is a CIS thin film solar in which a back electrode layer, a p-type CIS light absorption layer, an n-type high-resistance buffer layer, and a window layer made of an n-type transparent conductive film are laminated in this order on a light-transmitting substrate. A CIS-based thin-film solar cell module in which a plurality of battery cells are electrically connected in series by patterning so as to have a specific voltage, and the back electrode layer is formed to form a translucent portion in the solar cell module. A high heat-resistant transparent conductive film is formed by removing the p-type CIS light absorbing layer and the n-type high-resistance buffer layer of the solar battery cell corresponding to the light-transmitting portion, and corresponding to the back electrode layer This is a light-transmitting CIS thin film solar cell module with an integrated structure that takes electrical contact between a conductive film and a window layer made of n-type transparent conductivity.

  (2) The present invention specifies a plurality of CIS-based thin-film solar cells laminated on a light-transmitting substrate in the order of a back electrode layer, a p-type CIS-based light absorption layer, and a window layer made of an n-type transparent conductive film. A CIS-based thin film solar cell module connected in series by patterning so as to have a voltage of 5 mm, and in order to form a translucent portion in the solar cell module, the back electrode layer is made of a highly heat-resistant transparent conductive film A light-transmitting CIS-based thin-film solar cell module having an integrated structure in which a p-type CIS-based light absorption layer of a solar cell corresponding to the light-transmitting portion is removed.

  (3) In the present invention, after forming a high heat-resistant transparent conductive film as a back electrode layer on a translucent substrate, a p-type CIS light absorption layer and an n-type high-resistance buffer layer are continuously formed thereon. After forming the film or the p-type CIS light absorption layer, the continuous p-type CIS light absorption layer and the n-type height of the solar cell corresponding to the light transmission part are formed in order to form the light transmission part. The resistance buffer layer or the p-type CIS light absorption layer is removed by a scraping method using a processing tool such as a metal blade, and then a window layer composed of a highly transparent n-type high-resistance buffer layer and an n-type transparent conductive film is continuously formed. After forming a film layer or a window layer made of an n-type transparent conductive film, the number of cells is regulated so that a specific voltage is obtained, and an integrated structure in which a plurality of cells are electrically connected in series is formed. Integrated light-transmitting CIS-based thin-film solar cell module using patterning method It is a manufacturing method of Le.

  (4) In the present invention, after forming a high heat-resistant transparent conductive film as a back electrode layer on a light-transmitting substrate, a p-type CIS light absorption layer is formed thereon to form a light-transmitting portion. Therefore, the p-type CIS-based light absorption layer of the solar battery cell corresponding to the translucent part is removed by a scraping method using a processing tool such as a metal blade, and then an n-type high-resistance buffer layer forming step and an n-type After forming a window layer made of a transparent conductive film, the patterning method is applied so as to form an integrated structure in which a plurality of cells are electrically connected in series by defining the number of solar cells to a specific voltage It is the manufacturing method of the translucent CIS type thin film solar cell module of the integrated structure which performs.

  (5) In the present invention, after forming a high heat-resistant transparent conductive film as a back electrode layer on a translucent substrate, the number of cells is regulated so that a specific voltage is obtained, and a plurality of cells are electrically In order to form an integrated structure connected in series, after forming a first pattern by a laser method, a p-type CIS-based light absorption layer and an n-type high-resistance buffer layer are successively formed thereon, After forming the second pattern by the mechanical scribing method using a processing tool such as a metal needle with a sharp tip, a light transmitting part is formed by a scraping method using a processing tool such as a metal blade matched to the cell width. The integrated structure in which the p-type CIS light absorption layer and the n-type high-resistance buffer layer of the solar battery cell corresponding to the light-transmitting portion are removed and a window layer made of an n-type transparent conductive film is formed thereon. Manufacture of translucent CIS thin film solar cell module It is a method.

  (6) In the present invention, after a high heat-resistant transparent conductive film is formed as a back electrode layer on a translucent substrate, the number of cells is regulated so that a specific voltage is obtained, and a plurality of cells are electrically In order to form an integrated structure connected in series, after forming a first pattern by a laser method, a p-type CIS-based light absorption layer and an n-type high-resistance buffer layer are successively formed thereon, After forming the second pattern by the mechanical scribing method using a processing tool such as a metal needle with a sharp tip, a light transmitting part is formed by a scraping method using a processing tool such as a metal blade matched to the cell width. The p-type CIS light absorption layer and the n-type high-resistance buffer layer of the solar battery cell corresponding to the light-transmitting portion are removed, the second pattern is formed by the mechanical scribing method, and then the n-type transparent is formed thereon. Window layer made of conductive film A method for producing a light-transmissive CIS based thin-film solar cell module of an integrated structure of a film.

  (7) In the present invention, after a high heat-resistant transparent conductive film is formed on a translucent substrate as a back electrode layer, the number of cells is regulated so that a specific voltage is obtained, and a plurality of cells are electrically In order to form an integrated structure connected in series, a first pattern is formed by a laser method, and then a p-type CIS-based light absorption layer is formed thereon to form a translucent portion. The p-type CIS light absorbing layer of the solar battery cell corresponding to the light transmitting part is removed by a scraping method using a processing tool such as a metal blade, and an n-type high resistance buffer layer is formed thereon, Then, after forming a second pattern by a mechanical scribing method using a processing tool such as a metal needle having a sharp tip, a transparent CIS thin film solar cell having an integrated structure in which a window layer made of an n-type transparent conductive film is formed It is a manufacturing method of a module.

  (8) In the present invention, after a high heat-resistant transparent conductive film is formed on a translucent substrate as a back electrode layer, the number of cells is regulated so that a specific voltage is obtained, and a plurality of cells are electrically In order to form an integrated structure connected in series, a first pattern is formed by a laser method, and then a p-type CIS-based light absorption layer is formed thereon to form a translucent portion. The p-type CIS light absorbing layer of the solar cell corresponding to the light transmitting part was removed by a scraping method using a processing tool such as a metal blade, and then a processing tool such as a metal needle with a sharp tip was used. An integrated translucent CIS thin-film solar cell module manufacturing method in which an n-type high-resistance buffer layer and a window layer made of an n-type transparent conductive film are successively formed after forming a second pattern by a mechanical scribing method. .

  (9) In the present invention, after a high heat-resistant transparent conductive film is formed on a translucent substrate as a back electrode layer, the number of cells is regulated so that a specific voltage is obtained, and a plurality of cells are electrically In order to form an integrated structure connected in series, a first pattern is formed by a laser method, a p-type CIS light absorption layer is formed on the first pattern, and then a light-transmitting portion is formed. The p-type CIS light absorbing layer of the solar cell corresponding to the light transmitting part is removed by a scraping method using a combined processing tool such as a metal blade, and then a processing tool such as a metal needle with a sharp tip is used. Of a light-transmitting CIS-based thin film solar cell module having an integrated structure in which a second layer is formed by a mechanical scribing method, and then a window layer made of an n-type high resistance buffer layer and an n-type transparent conductive film is formed thereon. Is the method.

  (10) In the present invention, when forming the third pattern after forming the window layer made of the n-type transparent conductive film, the interval (pitch) between the solar cells is set to n times the cell width (however, (n is an integer greater than or equal to 2.) The manufacturing method of the translucent CIS type thin film solar cell module having an integrated structure according to any one of (3) to (9).

  (11) The present invention provides a dust collector in which a processing tool such as a metal blade used in the scraping method for forming the light-transmitting portion has a vertical or constant angle with respect to the substrate surface and collects the removed member. It is a manufacturing method of the translucent CIS type thin film solar cell module of the integrated structure as described in any one of said (3) thru | or (9) which comprises a structure.

  (12) In the present invention, after the window layer made of the n-type transparent conductive film is formed, the third pattern is formed by a mechanical scribing method or a laser method using a processing tool such as a metal needle having a sharp tip. The transparent CIS-based thin-film solar cell module having an integrated structure according to any one of (3) to (9), wherein a third pattern is not formed in the solar cell corresponding to the translucent portion when It is a manufacturing method.

  (13) The integration according to any one of (3) to (9), wherein the scraping method using the processing tool such as the metal blade adjusts the processing tool such as the metal blade to a cell width. It is the manufacturing method of the translucent CIS type thin film solar cell module of a structure.

  The present invention does not require any significant changes to the existing CIS-based thin-film solar cell manufacturing method, and thus ensures translucency while suppressing a decrease in power generation performance without significantly increasing the manufacturing cost. Therefore, application as building materials including window materials becomes easy.

Embodiments of the present invention will be described below.
The present invention relates to a translucent CIS thin film solar cell module having an integrated structure and a method for manufacturing the same.
A CIS-based thin-film solar cell 2 constituting the light-transmitting CIS-based thin-film solar cell module 1 having an integrated structure according to the present invention has a basic structure as shown in FIG. Further, an alkali barrier layer (not required to be formed) 2B, a back electrode layer 2C (a metal back electrode layer in the case of a non-translucent type), a p-type CIS system This is a pn heterojunction device having a substrate structure in which high-quality thin film layers are sequentially laminated in the order of a light absorption layer 2D, an n-type high-resistance buffer layer 2E, and an n-type transparent conductive film window layer 2F.

The p-type CIS-based light absorption layer 2C is a multi-component compound semiconductor thin film, in particular, an I-III-VI group ₂ chalcopyrite semiconductor, for example, copper indium selenide (CuInSe ₂ ), copper indium selenide, gallium (CuInGaSe). ₂ ) Copper gallium diselenide (CuGaSe ₂ ), Indium gallium selenide, sulfur indium gallium (Cu (InGa) (SSe) ₂ ), Copper indium disulfide (CuInS ₂ ), Copper gallium disulfide (CuGaS) ₂ ) Copper indium gallium selenide (CuInGaS ₂ ), copper indium gallium selenide (CuInGaSe ₂ ), thin film of selenium, copper indium gallium sulphide (Cu (InGa) (SSe) ₂ ) ₂ ) It consists of a p-type semiconductor.

  The translucent CIS thin film solar cell module 1 having the integrated structure has a cover crow attached to the upper surface (front side surface) via a heated and crosslinked EVA resin film as an adhesive, and the rear surface side is made transparent. A back sheet is attached to the optical substrate 2A via a heated and crosslinked EVA resin film, and a frame is attached to the outer periphery of the structure via a sealing material.

First, the detail of the structure of a translucent CIS type thin film solar cell module is demonstrated.
As shown in FIG. 1 and FIG. 2, the CIS thin film solar cell module 1 includes an alkali barrier layer 2B, a back electrode layer 2C, a p-type CIS light absorption layer 2D, n on a translucent substrate 2A as necessary. A plurality of CIS-based thin-film solar cells 2 stacked in the order of a high-resistance buffer layer 2E and a window layer 2F made of an n-type transparent conductive film are electrically connected in series or in parallel by patterning so as to obtain a specific voltage. This is the structure. In order to form the translucent part B in the CIS thin film solar cell module 1, the substrate 2A is formed of a translucent member, the back electrode layer 2C is formed of a high heat resistant transparent conductive film, and FIG. As shown in FIG. 2, the p-type CIS-based light absorption layer 2D and the n-type high-resistance buffer layer 2E are removed from the CIS-based thin-film solar battery cell 2 corresponding to the light-transmitting portion B, or as shown in FIG. By making the structure in which only the p-type CIS-based light absorption layer 2D of the CIS-based thin-film solar cell 2 corresponding to the light-transmitting portion B is removed, the light-transmitting property is ensured.

  As another example, as shown in FIG. 3, the n-type high resistance buffer layer 2E of the CIS-based thin film solar cell module 1 is omitted, and a light transmitting portion is formed in the solar cell module. The back electrode layer is formed of a highly heat-resistant transparent conductive film, and the light-transmitting property is secured by adopting a structure in which the p-type CIS light absorbing layer of the solar battery cell corresponding to the light-transmitting portion is removed.

  As another example, as shown in FIG. 4, each of the third patterns of the window layer made of the n-type transparent conductive film of the CIS-based thin film solar cell module 1 shown in FIGS. By setting the interval (pitch) between solar cells to twice the cell width, a light-transmitting CIS-based thin film solar cell module having a cell interval (pitch) twice the cell width is formed. The cell interval (pitch) is not limited to twice the cell width, but is n times the cell width (where n is an integer of 2 or more) according to the required light transmission amount. Can be.

  Below, the manufacturing method of the translucent CIS type thin film solar cell module of the integrated structure of this invention is demonstrated using FIGS. 1-4 and following Table 1. FIG.

  As shown in FIG. 1 and Case 1 in Table 1, after forming an alkali barrier layer 2B on a translucent substrate 2A as necessary, and forming a high heat-resistant transparent conductive film as a back electrode layer 2C In order to form an integrated structure in which a plurality of cells are electrically connected in series by defining the number of cells so as to have a specific voltage, a p-type is formed on the first pattern by forming a first pattern by a laser method. After continuously forming the CIS light absorbing layer 2D and the n-type high-resistance buffer layer 2E in this order, the second pattern is formed by mechanical scribing using a processing tool such as a metal needle with a sharp tip. The p-type CIS light absorption layer 2D and the n-type high-resistance buffer layer 2E of the solar cell corresponding to the light-transmitting portion are removed by a scraping method using a processing tool such as a metal blade to form an optical portion. N-type transparent conductive film After film formation the Ranaru window layer 2F, to form the third pattern. The width of the blade of a processing tool such as a metal blade used in the scraping method for forming the translucent portion is adjusted to the cell width, thereby removing the thin film to be removed (in this case, the p-type CIS light absorption layer). The 2D and n-type high resistance buffer layer 2E) can be removed accurately and quickly (for a short time).

  As shown in FIG. 1 and case 2 in Table 1, as another embodiment of the case 1, after forming the p-type CIS light absorbing layer 2D and the n-type high-resistance buffer layer 2E, Mechanical scribing using a processing tool such as a metal needle with a sharp tip after removing the p-type CIS light absorption layer 2D and the n-type high-resistance buffer layer 2E of the corresponding solar cell (similar to the case 1) A second pattern is formed by the method, a window layer 2F made of an n-type transparent conductive film is formed thereon, and then a third pattern is formed.

  As shown in FIG. 2 and Case 3 of Table 1, after forming an alkali barrier layer 2B on a translucent substrate 2A as necessary and forming a high heat-resistant transparent conductive film as a back electrode layer 2C In order to form an integrated structure in which a plurality of cells are electrically connected in series by defining the number of cells so as to have a specific voltage, a p-type is formed on the first pattern by forming a first pattern by a laser method. The p-type CIS light absorbing layer of the solar cell corresponding to the light transmitting portion is formed by a scraping method using a processing tool such as a metal blade in order to form the CIS light absorbing layer 2D and form the light transmitting portion. 2D is removed and an n-type high resistance buffer layer 2E is formed thereon, and then a second pattern is formed thereon by a mechanical scribing method using a processing tool such as a metal needle with a sharp tip. Made window layer 2F made of n-type transparent conductive film After, to form a third pattern. The width of the blade of a processing tool such as a metal blade used in the scraping method for forming the translucent portion is adjusted to the cell width, thereby removing the thin film to be removed (in this case, the p-type CIS light absorption layer). 2D) can be removed accurately and quickly (short time).

  As shown in FIG. 2 and case 4 in Table 1, as another embodiment of the case 3, a p-type CIS-based light absorption layer 2D is formed to form a light-transmitting portion. After removing the p-type CIS-based light absorption layer 2D of the solar battery cell corresponding to the translucent part by the scraping method using the same as in the case 3, a processing tool such as a metal needle having a sharp tip is then used. After forming the second pattern by the mechanical scribing method used, an n-type high resistance buffer layer 2E and a window layer 2F made of an n-type transparent conductive film are successively formed thereon, and then the third pattern is formed. Form.

  As shown in FIG. 3 and case 5 of Table 1, after forming the alkali barrier layer 2B on the translucent substrate 2A as necessary and forming the high heat-resistant transparent conductive film as the back electrode layer 2C, In order to form an integrated structure in which a plurality of cells are electrically connected in series by defining the number of cells so as to have a specific voltage, a p-type is formed on the first pattern by forming a first pattern by a laser method. After forming the CIS light absorption layer 2D, the p-type CIS light absorption of the solar cell corresponding to the light transmission part is formed by a scraping method using a processing tool such as a metal blade to form the light transmission part. After forming the second pattern by mechanical scribing using a processing tool such as a metal needle having a sharp tip after removing the layer 2D, an n-type high resistance buffer layer forming step and an n-type transparent conductive film are formed on the second pattern. After the window layer 2F made of To form a pattern.

  As shown in FIG. 4 and case 6 of Table 1, each solar cell is formed when the third pattern is formed after the window layer 2F made of an n-type transparent conductive film is formed by any of the cases 1 to 5. The interval (pitch) between cells is made twice the cell width. The cell interval (pitch) is not limited to twice the cell width, but is n times the cell width (where n is an integer of 2 or more) according to the required light transmission amount. Can be.

  In the mechanical scribing method using a processing tool such as a metal blade for forming a translucent part in the cases 1 to 6, a p-type CIS light absorption is achieved by adjusting the processing tool such as a metal blade to the cell width. The efficiency of removing the layer 2D and the n-type high resistance buffer layer 2E can be improved.

  The scraping device 4 used in the scraping method for forming the translucent part in the cases 1 to 6 is removed by the scraping part 4A having a processing tool such as a metal blade and the scraping part as shown in FIG. A dust collecting portion 4B for collecting collected materials (p-type CIS light absorption layer 2D and n-type high-resistance buffer layer 2E or p-type CIS light absorption layer 2D), and monitoring the scraping and dust collection state A monitor device 4C is provided. The processing tool such as the metal blade is perpendicular to the substrate surface or has a certain angle.

  After forming the window layer 2F made of the n-type transparent conductive film in the cases 1 to 6, the third pattern is formed by a mechanical scribing method or a laser method using a processing tool such as a metal needle having a sharp tip. When forming, a 3rd pattern is not formed in the photovoltaic cell applicable to the said translucent part B. FIG.

It is a schematic block diagram (sectional drawing) of the translucent CIS type thin film solar cell module of the integrated structure manufactured by the manufacturing method of this invention. (Case 1 and Case 2) It is a schematic block diagram (sectional drawing) of the translucent CIS type thin film solar cell module of the integrated structure manufactured by the manufacturing method of this invention. (Case 3 and Case 4) It is a schematic block diagram (sectional drawing) of the translucent CIS type thin film solar cell module of the integrated structure manufactured by the manufacturing method of this invention. (Case 5) It is a schematic block diagram (sectional drawing) of the translucent CIS type thin film solar cell module of the integrated structure manufactured by the manufacturing method of this invention. (Case 6) It is a schematic block diagram (plan view) of the translucent CIS type thin film solar cell module of the integrated structure of this invention. It is a schematic block diagram (perspective view) of the scraping apparatus used for the manufacturing method of the translucent CIS type thin film solar cell module of the integrated structure of this invention. It is a schematic block diagram (sectional drawing) of the CIS type thin film photovoltaic cell which comprises the translucent CIS type thin film solar cell module of the integrated structure of this invention. It is a schematic block diagram (sectional drawing) of the CIS type thin film solar cell module manufactured with the conventional manufacturing method.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Translucent CIS thin film solar cell module with integrated structure of the present invention 1 'Conventional CIS thin film solar cell module 2 CIS thin film solar cell constituting the translucent CIS thin film solar cell module with integrated structure of the present invention Cell 2A Translucent substrate 2B Alkali barrier layer 2C Back electrode layer made of high heat resistant transparent conductive film 2D p-type light absorption layer 2E n-type high resistance buffer layer 2F n-type transparent conductive film window layer P1 first pattern P2 first 2 pattern P3 3rd pattern A cell part B translucent part 3 electrode 4 scraping device 4A scraping part 4B dust collecting port 4C monitoring device

Claims (9)

Identify multiple CIS-based thin-film solar cells that are laminated in the order of a back electrode layer, a p-type CIS light-absorbing layer, an n-type high-resistance buffer layer, and a window layer made of an n-type transparent conductive film on a translucent substrate A CIS-based thin film solar cell module electrically connected in series by patterning so as to have a voltage of
In order to form a translucent part in the solar cell module, the back electrode layer is formed of a highly heat-resistant transparent conductive film, and the p-type CIS light absorbing layer and n-type solar cell corresponding to the translucent part are formed. removing the high-resistance buffer layer, Ri preparative electrical contact between the high heat resistant transparent conductive film and the window layer made of n-type transparent conductive corresponding to the back surface electrode layer,
In order to form an integrated structure in which the plurality of cells are connected in series, a first pattern is formed on the back electrode layer, and p-type CIS systems on the back electrode layers adjacent to each other divided by the first pattern The light absorption layer and the n-type high resistance buffer layer are removed so as to straddle the first pattern, and the p-type CIS light absorption layer and the n-type high resistance buffer layer are removed in the first portion. translucent CIS based thin-film solar cell module of an integrated structure, characterized in Rukoto n-type transparent conductive film is formed so as to straddle the pattern. Patterning a plurality of CIS-based thin-film solar cells stacked in this order on a translucent substrate in the order of a back electrode layer, a p-type CIS light-absorbing layer, and an n-type transparent conductive film so as to have a specific voltage A CIS-based thin film solar cell module electrically connected in series by
In order to form a translucent part in the solar cell module, the back electrode layer is formed of a highly heat-resistant transparent conductive film, and the p-type CIS light absorption layer of the solar cell corresponding to the translucent part is removed. ,
In order to form an integrated structure in which the plurality of cells are connected in series, a p-type CIS light on a back electrode layer adjacent to each other is formed with a first pattern formed on the back electrode layer and divided by the first pattern. An absorption layer is removed so as to straddle the first pattern, and an n-type transparent conductive film is formed so as to straddle the first pattern in a portion where the p-type CIS light absorption layer is removed. A translucent CIS-based thin-film solar cell module having an integrated structure. After forming a high-heat-resistant transparent conductive film as a back electrode layer on a translucent substrate, the number of cells is regulated so that a specific voltage is obtained, and an integrated structure in which multiple cells are electrically connected in series is formed In order to achieve this, after forming a first pattern by a laser method, a p-type CIS light absorption layer and an n-type high-resistance buffer layer are successively formed thereon, and then a metal needle having a sharp tip, etc. After forming the second pattern by the mechanical scribing method using the processing tool, a light transmitting portion is formed by a scraping method using a processing tool such as a metal blade to form a solar cell corresponding to the light transmitting portion. The p-type CIS light absorption layer and the n-type high-resistance buffer layer are removed so as to straddle the first pattern, and a window layer made of an n-type transparent conductive film is formed thereon, and the film is formed. , The p-type CIS light absorption layer and the n-type high resistance bar The transparent portion of the file layer is removed, a manufacturing method of the first light-transmissive CIS based thin-film solar cell module of an integrated structure, which comprises a film of n-type transparent conductive film so as to straddle the pattern. After forming a high-heat-resistant transparent conductive film as a back electrode layer on a translucent substrate, the number of cells is regulated so that a specific voltage is obtained, and an integrated structure in which multiple cells are electrically connected in series is formed In order to form a first pattern by a laser method, a p-type CIS-based light absorption layer is formed on the first pattern, and a translucent part is formed, so that a scraping method using a processing tool such as a metal blade is used. Accordingly, the said p-type CIS-based light absorption layer of a solar battery cell corresponding to the light transmitting portion is removed so as to cross the first pattern, to form a film of the n-type high-resistance buffer layer thereon, then the tip After forming the second pattern by the mechanical scribing method using a processing tool such as a sharp metal needle , a window layer made of an n-type transparent conductive film is formed, and when forming the window layer, p-type In the translucent part from which the CIS-based light absorption layer has been removed, Method for producing a light-transmissive CIS based thin-film solar cell module of an integrated structure, characterized by forming a film of the n-type transparent conductive film so as to straddle the over down. After forming a high-heat-resistant transparent conductive film as a back electrode layer on a translucent substrate, the number of cells is regulated so that a specific voltage is obtained, and an integrated structure in which multiple cells are electrically connected in series is formed In order to form a first pattern by a laser method, a p-type CIS-based light absorption layer is formed on the first pattern, and a translucent part is formed, so that a scraping method using a processing tool such as a metal blade is used. Accordingly, mechanical scribing in which the translucent portion the p-type CIS-based light absorption layer of the corresponding solar cell is removed so as to cross the first pattern, then tip using the machining tool such as a sharp metal needle After forming the second pattern by the method, a window layer made of an n-type high resistance buffer layer and an n-type transparent conductive film is continuously formed , and a p-type CIS light absorption layer is formed when the window layer is formed. Step over the first pattern on the removed translucent part Method for producing a light-transmissive CIS based thin-film solar cell module of an integrated structure, characterized by forming a film of sea urchin n-type transparent conductive film. When forming the third pattern after forming the window layer made of the n-type transparent conductive film, the interval (pitch) between the solar cells is set to n times the cell width (where n is an integer of 2 or more). 6. The method for producing a light-transmitting CIS-based thin-film solar cell module with an integrated structure according to any one of claims 3 to 5 . A processing tool such as a metal blade used in the scraping method for forming the light-transmitting portion has a dust collection mechanism for collecting a removed member while giving a vertical or constant angle to the substrate surface. The manufacturing method of the translucent CIS type thin film solar cell module of the integrated structure as described in any one of Claim 3 thru | or 5 . After forming the window layer made of the n-type transparent conductive film, when the third pattern is formed by a mechanical scribing method or a laser method using a processing tool such as a metal needle having a sharp tip, the light transmitting portion The method for manufacturing a light-transmitting CIS thin film solar cell module having an integrated structure according to any one of claims 3 to 5 , wherein the third pattern is not formed in the solar cell corresponding to the above. The light-transmitting property of the integrated structure according to any one of claims 3 to 5 , wherein the scraping method using the processing tool such as the metal blade adjusts the processing tool such as the metal blade to a cell width. Manufacturing method of CIS type thin film solar cell module.

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