KR101349525B1 - Photovoltaic apparatus - Google Patents

Photovoltaic apparatus Download PDF

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KR101349525B1
KR101349525B1 KR1020120041941A KR20120041941A KR101349525B1 KR 101349525 B1 KR101349525 B1 KR 101349525B1 KR 1020120041941 A KR1020120041941 A KR 1020120041941A KR 20120041941 A KR20120041941 A KR 20120041941A KR 101349525 B1 KR101349525 B1 KR 101349525B1
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electrode layer
holes
disposed
light absorbing
separation grooves
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KR1020120041941A
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Korean (ko)
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KR20130119073A (en
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김종현
박찬영
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엘지이노텍 주식회사
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)

Abstract

A photovoltaic device is disclosed. The solar cell apparatus includes a substrate having a plurality of separation grooves formed therein; A back electrode layer disposed on the substrate and inside the groove; And a light absorbing layer disposed on the back electrode layer and a front electrode layer disposed on the light absorbing layer, wherein the back electrode layer includes a plurality of first through grooves formed corresponding to the separation grooves, respectively.

Description

Solar power generation device {PHOTOVOLTAIC APPARATUS}

An embodiment relates to a photovoltaic device.

A manufacturing method of a solar cell for solar power generation is as follows. First, a substrate is provided, a rear electrode layer is formed on the substrate, and then a light absorption layer, a buffer layer and a high-resistance buffer layer are sequentially formed on the rear electrode layer. A method of forming a light absorbing layer of copper-indium-gallium-selenide (Cu (In, Ga) Se 2 ; CIGS system) while evaporating copper, indium, gallium and selenium simultaneously or separately in order to form the light absorbing layer And a method of forming a metal precursor film by a selenization process are widely used. The energy band gap of the light absorbing layer is about 1 to 1.8 eV.

Thereafter, a buffer layer containing cadmium sulfide (CdS) is formed on the light absorbing layer by a sputtering process. The energy bandgap of the buffer layer is about 2.2 to 2.4 eV. Thereafter, a high resistance buffer layer including zinc oxide (ZnO) is formed on the buffer layer by a sputtering process. The energy bandgap of the high resistance buffer layer is about 3.1 to 3.3 eV.

Thereafter, a transparent conductive material is laminated on the high-resistance buffer layer, and a transparent electrode layer is formed on the high-resistance buffer layer. Examples of the material used as the transparent electrode layer include aluminum doped zinc oxide. The energy band gap of the transparent electrode layer is about 3.1 to 3.3 eV.

In such a photovoltaic device, various studies have been made to improve the photoelectric conversion efficiency by adjusting the band gap energy in the light absorbing layer.

Thus, various types of photovoltaic devices can be manufactured and used to convert sunlight into electrical energy. Such a photovoltaic power generation apparatus is disclosed in, for example, Japanese Patent Application Laid-Open No. 10-2008-0088744.

An embodiment of the present invention is to provide a photovoltaic device having improved light-to-electricity conversion efficiency.

Photovoltaic device according to one embodiment includes a substrate formed with a plurality of separation grooves; A back electrode layer disposed on the substrate and inside the groove; And a light absorbing layer disposed on the back electrode layer and a front electrode layer disposed on the light absorbing layer, wherein the back electrode layer includes a plurality of first through grooves formed corresponding to the separation grooves, respectively.

Photovoltaic device according to one embodiment includes a substrate; A rear electrode layer disposed on the substrate; A light absorbing layer disposed on the rear electrode layer; And a front electrode layer disposed on the light absorbing layer, wherein the substrate comprises: a base layer; And a protrusion disposed on the base layer, and the back electrode layer includes a first through groove formed on a side surface of the protrusion.

The solar cell apparatus according to the embodiment forms the first through holes corresponding to the separation grooves. In particular, the solar cell apparatus according to the embodiment forms the first through groove on the inner surface of the separation groove or the side of the protrusion.

In addition, the solar cell apparatus according to the embodiment may form the second through groove and the third through groove on the inner surface of the separation groove or the side of the protrusion. Accordingly, the solar cell apparatus according to the embodiment may arrange the first through groove, the second through groove and the third through groove perpendicularly or inclined with respect to the substrate.

Therefore, the solar cell apparatus according to the embodiment can reduce the area of the first through hole, the second through hole and the third through hole when viewed from the top side. That is, the solar cell apparatus according to the embodiment can minimize the area that does not actually generate power, and can improve the photoelectric conversion efficiency.

1 is a plan view showing a photovoltaic generator according to an embodiment.
2 is a perspective view showing a support substrate.
3 is a cross-sectional view illustrating a cross section taken along AA ′ in FIG. 1.
4 to 6 are views illustrating a process of manufacturing the solar cell apparatus according to the embodiment.

In the description of the embodiments, it is described that each substrate, film, electrode, groove or layer or the like is formed "on" or "under" of each substrate, electrode, film, groove or layer or the like. In the case, “on” and “under” include both being formed “directly” or “indirectly” through other components. In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

1 is a plan view showing a photovoltaic generator according to an embodiment. 2 is a perspective view showing a support substrate. FIG. 3 is a cross-sectional view taken along the line A-A 'of FIG. 1.

1 to 3, the solar cell apparatus includes a support substrate 100, a back electrode layer 200, a light absorbing layer 300, a buffer layer 400, a high resistance buffer layer 500, a front electrode layer 600, and And a connection 700.

The support substrate 100 supports the back electrode layer 200, the light absorbing layer 300, the buffer layer 400, the high resistance buffer layer 500, the front electrode layer 600, and the connection part 700. .

The support substrate 100 may be an insulator. The support substrate 100 may be a glass substrate, a plastic substrate, or a metal substrate. In more detail, the support substrate 100 may be a soda lime glass substrate. The supporting substrate 100 may be transparent. The support substrate 100 may be rigid or flexible.

As shown in FIG. 2, a plurality of separation grooves 130 are formed on an upper surface of the support substrate 100. The separation grooves 130 may have a shape extending in a second direction. The separation grooves 130 may extend in parallel with each other. In addition, the separation grooves 130 may be spaced apart from each other at regular intervals.

The width W1 of the separation grooves 130 may be about 0.5 mm to about 3 mm. In more detail, the width W1 of the separation grooves 130 may be about 0.5 mm to about 1 mm. In addition, the depth H of the separation grooves 130 may be about 0.1 mm to about 1 mm. In more detail, the depth H of the separation grooves 130 may be about 0.3 mm to about 0.5 mm. In addition, the ratio of the depth H and the width W1 of the separation grooves 130 may be about 1: 1 to about 1:10.

The inner surface of the separation grooves 130 may be perpendicular or inclined with respect to the support substrate 100. For example, inner surfaces of the separation grooves 130 may cross at an angle of about 30 ° to about 90 ° with respect to the support substrate 100.

The support substrate 100 has a step on its upper surface. The support substrate 100 includes a base layer 110 and a plurality of protrusions 120.

The base layer 110 supports the protrusions 120. The base layer 110 may have a plate shape. The base layer 110 and the protrusions 120 may be integrally formed with each other. That is, an actual interface may not be formed between the base layer 110 and the protrusions 120.

Alternatively, an interface may be formed between the base layer 110 and the protrusions 120. In more detail, the base layer 110 and the protrusions 120 may be formed of different materials. For example, the base layer 110 may include glass, and the protrusions 120 may include plastic.

The protrusions 120 are disposed on the base layer 110. In more detail, the protrusions 120 may protrude upward from the base layer 110. The protrusions 120 may have the same thickness.

In addition, the protrusions 120 may have a shape extending in the second direction. That is, when viewed from the top side, the protrusions 120 may have a shape extending in the second direction. The width W2 of the protrusions 120 may be about 5 mm to about 10 mm. In addition, the ratio of the width W1 of the separation grooves 130 and the width W2 of the protrusions 120 may be about 1: 1 to about 1: 100.

The protrusions 120 are spaced apart from each other. The protrusions 120 are spaced apart from each other, and the separation grooves 130 are formed in a space therebetween. That is, side surfaces of the protrusions 120 are inner surfaces of the separation grooves 130. The protrusions 120 are arranged next to each other. The protrusions 120 are disposed parallel to each other. Top surfaces of the protrusions 120 may be flat.

The rear electrode layer 200 is disposed on the supporting substrate 100. In more detail, the back electrode layer 200 may cover the protrusions 120. In more detail, the back electrode layer 200 may be disposed on the top and side surfaces of the protrusions 120. In addition, the back electrode layer 200 is also disposed in the separation grooves 130. The back electrode layer 200 is also disposed on the bottom surface and the inner surface of the separation grooves 130.

The rear electrode layer 200 is a conductive layer. Examples of the material used as the back electrode layer 200 include a metal such as molybdenum.

In addition, the rear electrode layer 200 may include two or more layers. At this time, the respective layers may be formed of the same metal or may be formed of different metals.

First through holes TH1 are formed in the back electrode layer 200. The first through holes TH1 are open regions exposing part or all of one inner side surface of the separation grooves 130. The first through holes TH1 may have a shape extending in the second direction.

The first through holes TH1 are formed to correspond to the separation grooves 130, respectively. In more detail, the first through holes TH1 are formed in the separation grooves 130, respectively. In more detail, the first through holes TH1 are formed on one inner surface of the separation grooves 130, respectively. The first through holes TH1 may expose a portion of one inner side surface of the separation grooves 130.

In addition, the first through holes TH1 may be formed at one side surface of the protrusions 120. That is, the first through holes TH1 may expose part or all of one side surface of the protrusions 120. The first through holes TH1 may expose a portion of one side surface of the protrusions 120.

Alternatively, the first through holes TH1 may be formed on a portion of the upper surface of the protrusion 120. That is, the first through holes TH1 may be formed over the side surface and the top surface of the protrusion 120.

Alternatively, the first through holes TH1 may be formed on the bottom surfaces of the separation grooves 130. That is, the first through holes TH1 may be formed over the inner surface and the bottom surface of the separation groove 130.

The width of the first through hole TH1 may be about 80 μm to 200 μm.

By the first through hole TH1, the back electrode layer 200 is divided into a plurality of back electrodes 210, 220... That is, the back electrodes 210, 220... Are defined by the first through groove TH1. 3 illustrates a first back electrode 210 and a second back electrode 220 of the back electrodes 210 and 220.

The back electrodes 210, 220... May be disposed over the top and other side surfaces of the protrusions 120 and the bottom surface of the separation grooves 130. That is, the back electrodes 210, 220... May cover the top and other side surfaces of the protrusion 120 and the bottom surface of the separation grooves 130.

The back electrodes 210, 220... Are spaced apart from each other by the first through holes TH1. The back electrodes 210, 220... Are arranged in a stripe shape.

Alternatively, the back electrodes 210, 220... May be arranged in a matrix form. At this time, the first through grooves TH1 may be formed in a lattice form when viewed from a plane.

The light absorbing layer 300 is disposed on the back electrode layer 200. In addition, the material included in the light absorbing layer 300 is filled in the first through holes TH1. In addition, the light absorbing layer 300 may be disposed in the separation grooves 130.

The light absorbing layer 300 includes a group I-III-VI compound. For example, the light absorbing layer 300 is copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2; CIGS-based) crystal structure, a copper-indium-selenide-based or copper-gallium-selenide Crystal structure.

The energy band gap of the light absorption layer 300 may be about 1 eV to 1.8 eV.

Second through holes TH2 are formed in the light absorbing layer 300. The second through holes (TH2) penetrate the light absorbing layer (300). In addition, the second through holes TH2 are open regions exposing a part of the back electrode layer 200.

The second through holes TH2 may be adjacent to the first through holes TH1, respectively. The second through holes TH2 may be disposed in the separation grooves 130, respectively. In more detail, the second through holes TH2 may be formed on one inner side surface of the separation grooves 130. That is, the second through holes TH2 may be formed on one side surface of the protrusions 120.

The width of the second through hole TH2 may be about 80 μm to about 200 μm.

In addition, the light absorbing layer 300 defines a plurality of light absorbing portions 310, 320... By the second through holes TH2. That is, the light absorbing layer 300 is divided into the light absorbing parts 310, 320... By the second through hole TH2.

The buffer layer 400 is disposed on the light absorbing layer 300. The buffer layer 400 includes cadmium sulfide (CdS), and an energy band gap of the buffer layer 400 is about 2.2 eV to 2.4 eV.

The high resistance buffer layer 500 is disposed on the buffer layer 400. The high-resistance buffer layer 500 includes zinc oxide (i-ZnO) that is not doped with impurities. The energy bandgap of the high resistance buffer layer 500 is about 3.1 eV to 3.3 eV.

The buffer layer 400 is divided into a plurality of buffers 410, 420... By the second through holes TH2, and the high resistance buffer layer 500 is divided into the second through holes TH2. ) Is divided into a plurality of high resistance buffers 510, 520.

The front electrode layer 600 is disposed on the high-resistance buffer layer 500. The front electrode layer 600 is transparent and is a conductive layer. In addition, the resistance of the front electrode layer 600 is higher than the resistance of the back electrode layer 200. For example, the resistance of the front electrode layer 600 may be about 10 to 200 times greater than the resistance of the back electrode layer 200. Examples of the material used as the front electrode layer 600 include aluminum doped ZnO (AZO).

Third through holes TH3 are formed in the front electrode layer 600. The third through holes TH3 are open regions exposing a part of the back electrode layer 200. For example, the width of the third through hole TH3 may be about 80 μm to about 200 μm.

The third through holes TH3 are formed at positions adjacent to the second through holes TH2, respectively. In more detail, the third through holes TH3 are disposed next to the second through holes TH2, respectively.

The third through holes TH3 are formed to correspond to the separation grooves 130, respectively. The third through holes TH3 may be formed in the separation grooves 130. In more detail, the third through holes TH3 may be formed on one inner side surface of the separation grooves 130. That is, the third through holes TH3 may be formed on one side surface of the protrusions 120.

The front electrode layer 600 is divided into a plurality of front electrodes 610, 620... By the third through holes TH3. That is, the front electrodes 610, 620... Are defined by the third through holes TH3.

The front electrodes 610, 620... Have a shape corresponding to the rear electrodes 210, 220. The front electrodes 610, 620... Are arranged in a stripe shape. Alternatively, the front electrodes 610, 620... May be arranged in a matrix form.

Further, a plurality of solar cells C1, C2, ... are defined by the third through-holes TH3. More specifically, the solar cells (C1, C2, ...) are defined by the second through-holes (TH2) and the third through-holes (TH3). That is, the photovoltaic apparatus according to the embodiment is divided into the solar cells C1, C2, ... by the second through grooves TH2 and the third through grooves TH3.

That is, the solar cell apparatus according to the embodiment includes the solar cells C1, C2 .... The solar cells C1, C2... Are disposed corresponding to the protrusions 120, respectively. The solar cells C1, C2... May be disposed over each of the protrusions 120 and the separation groove 130 adjacent thereto.

The connection part 700 is disposed inside the second through hole TH2. In more detail, the connection portion may be disposed in the separation grooves 130, respectively. In more detail, the connection portion may be disposed on one inner surface of the separation grooves 130, respectively. In more detail, the connection portion may be disposed on each side of the protrusions 120.

The connection part 700 extends from the front electrode layer 600 and directly contacts the back electrode layer 200. For example, the connection part 700 extends from the first front electrode 610 to be in direct contact with the second back electrode 220.

Therefore, the connection part 700 connects the front electrode and the rear electrode included in the solar cells C1, C2, ... which are adjacent to each other. For example, the connection part 700 connects the first front electrode 610 and the second back electrode 220.

The connection part 700 is integrally formed with the front electrodes 610 and 620. That is, the material used as the connection part 700 is the same as the material used as the front electrode layer 600.

As described above, the solar cell apparatus according to the embodiment forms the first through holes TH1 corresponding to the separation grooves 130, respectively. In particular, the solar cell apparatus according to the embodiment forms the first through holes TH1 on the inner side surfaces of the separation grooves 130, that is, the side surfaces of the protrusions 120.

In addition, the photovoltaic device according to the embodiment may have the second through holes TH2 and the third through one inner side surface of the separation grooves 130, that is, one side surface of the protrusions 120. Grooves TH3 may be formed.

Accordingly, the solar cell apparatus according to the embodiment has the first through holes TH1, the second through holes TH2, and the third through holes TH3 with respect to the support substrate 100. It can be arranged vertically or inclined.

Therefore, the solar cell apparatus according to the embodiment may reduce the area of the first through holes TH1, the second through holes TH2, and the third through holes TH3 when viewed from the top. Can be. That is, in the photovoltaic device according to the embodiment, an area that is not actually generated may be inclined with respect to the support substrate 100.

Accordingly, the photovoltaic device according to the embodiment can minimize the area that does not actually generate power, and can improve the photoelectric conversion efficiency.

4 to 6 are cross-sectional views illustrating a method of manufacturing the solar cell apparatus according to the embodiment. The description of this manufacturing method refers to the description of the photovoltaic device described above.

Referring to FIG. 4, the back electrode layer 200 is formed on the support substrate 100. The back electrode layer 200 may be formed by depositing a metal such as molybdenum on the support substrate 100. The back electrode layer 200 is formed on the top and side surfaces of the protrusions 120. In addition, the back electrode layer 200 is also formed on the bottom surface of the separation grooves 130. The back electrode layer 200 may be formed by a sputtering process.

Thereafter, the back electrode layer 200 is patterned to form a plurality of first through holes TH1. Accordingly, a plurality of back electrodes 210, 220... Are formed on the support substrate 100. The rear electrode layer 200 is patterned by a laser.

In this case, the first through holes TH1 may be formed at one side surface of the protrusions 120, that is, at one inner surface of the separation grooves 130. That is, the first through holes TH1 may be formed to expose some or all of one inner surface of the protrusions 120. The first through holes TH1 may have a width of about 80 μm to about 200 μm.

Referring to FIG. 5, a light absorbing layer 300, a buffer layer 400, and a high resistance buffer layer 500 are formed on the back electrode layer 200.

The light absorption layer 300 may be formed by a sputtering process or an evaporation process.

For example, copper, indium, gallium, selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) while evaporating copper, indium, gallium, and selenium simultaneously or separately to form the light absorbing layer 300. A method of forming a light absorbing layer of a metal and a method of forming a metal precursor film by a selenization process are widely used.

When a metal precursor film is formed and then subjected to selenization, a metal precursor film is formed on the rear electrode 200 by a sputtering process using a copper target, an indium target, and a gallium target.

Thereafter, the metal precursor film is formed of a copper-indium-gallium-selenide system (Cu (In, Ga) Se 2 ; CIGS system) by a selenization process.

Alternatively, the copper target, the indium target, the sputtering process using the gallium target, and the selenization process may be performed simultaneously.

Alternatively, the CIS-based or CIG-based optical absorption layer 300 can be formed by using only a copper target and an indium target, or by a sputtering process and a selenization process using a copper target and a gallium target.

Thereafter, cadmium sulfide is deposited on the light absorbing layer 300 by a sputtering process, a chemical bath depositon (CBD), or the like, and the buffer layer 400 is formed.

Then, zinc oxide is deposited on the buffer layer 400 by a sputtering process or the like, and the high-resistance buffer layer 500 is formed.

Thereafter, a portion of the light absorbing layer 300, a portion of the buffer layer 400, and a portion of the high resistance buffer layer 500 are removed to form second through holes TH2.

The second through grooves TH2 may be formed by a mechanical device such as a tip or a laser device.

For example, the light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500 may be patterned by a tip having a width of about 40 μm to about 180 μm. In addition, the second through holes TH2 may be formed by a laser having a wavelength of about 200 to 600 nm.

At this time, the width of the second through grooves TH2 may be about 100 mu m to about 200 mu m. The second through holes TH2 may be formed to be adjacent to the first through holes TH1, respectively. The second through holes TH2 may be formed on one side surface of the protrusions 120, that is, on one inner surface of the separation grooves 130. In addition, the second through hole TH2 is formed to expose a portion of the back electrode layer 200.

Referring to FIG. 6, a front electrode layer 600 is formed on the high resistance buffer layer 500. In this case, a material forming the front electrode layer 600 is filled in the second through holes TH2.

In order to form the front electrode layer 600, a transparent conductive material is stacked on the high resistance buffer layer 500. The transparent conductive material is filled in the entire second through holes TH2. Examples of the transparent conductive material include aluminum doped zinc oxide and the like.

Accordingly, the connection part 700 extending from the front electrode layer 600 and directly connected to the back electrode layer 200 is formed inside the second through holes TH2.

Afterwards, a portion of the front electrode layer 600 is removed to form a plurality of third through holes TH3. That is, the front electrode layer 600 is patterned to define a plurality of front electrodes 610, 620... And a plurality of solar cells C1, C2.

The width of the third through holes TH3 may be about 80 μm to about 200 μm.

The third through holes TH3 are adjacent to the second through holes TH2, respectively. The third through holes TH3 may be formed to correspond to the separation grooves 130. In more detail, the third through holes TH3 may be formed on one inner surface of the separation grooves 130, respectively. Further, the third through holes TH3 may be formed on one side of the protrusions 120, respectively.

As such, by the manufacturing method of the solar cell apparatus according to the present embodiment, a solar cell apparatus having an improved photoelectric conversion efficiency can be provided.

In addition, the features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention, and are not necessarily limited to only one embodiment. Furthermore, the features, structures, effects, and the like illustrated in the embodiments may be combined or modified with respect to other embodiments by those skilled in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

Claims (12)

A substrate on which a plurality of separation grooves are formed;
A back electrode layer disposed on the substrate and inside the groove;
A light absorbing layer disposed on the back electrode layer;
And a front electrode layer disposed on the light absorbing layer,
The back electrode layer includes a plurality of first through holes formed corresponding to the separation grooves, respectively.
The first through holes are formed on the inner surface of the separation grooves. delete The photovoltaic device of claim 1, wherein the first through holes expose part or all of inner surfaces of the separation grooves. The light absorbing layer of claim 1, wherein the light absorbing layer comprises second through holes adjacent to the first through holes, respectively.
The second through hole is a solar cell apparatus disposed in the separation grooves, respectively. The method of claim 4, further comprising a connecting portion extending from the front electrode layer and disposed in the second through groove,
The connection unit is a solar cell apparatus disposed on the inner side of the separation groove. A substrate on which a plurality of separation grooves are formed;
A back electrode layer disposed on the substrate and inside the groove;
A light absorbing layer disposed on the back electrode layer;
And a front electrode layer disposed on the light absorbing layer,
The back electrode layer includes a plurality of first through holes formed corresponding to the separation grooves, respectively.
The light absorbing layer includes second through grooves adjacent to the first through grooves, respectively.
The second through grooves are respectively disposed in the separation grooves,
The front electrode layer includes third through holes adjacent to the second through holes, respectively.
And the third through holes are formed at positions corresponding to the separation grooves, respectively. The solar cell apparatus of claim 1, wherein the separation groove has a width of 0.5 mm to 1 mm, and the separation groove has a depth of 0.3 mm to 0.5 mm. The solar cell apparatus according to claim 1, wherein a ratio of the width of the separation groove and the depth of the separation groove is 1: 1 to 1:10. Board;
A rear electrode layer disposed on the substrate;
A light absorbing layer disposed on the rear electrode layer; And
And a front electrode layer disposed on the light absorbing layer,
The substrate
Base layer; And
It includes a protrusion disposed on the base layer,
The rear electrode layer includes a first through groove formed on the side of the protrusion. The photovoltaic device of claim 9, wherein the light absorbing layer includes a second through hole formed on a side surface of the protrusion. The photovoltaic device of claim 10, further comprising a connection part extending from the front electrode layer and disposed inside the second through hole. The photovoltaic device of claim 10, wherein the front electrode layer includes a third through hole adjacent to the second through hole and formed on a side surface of the protrusion.
KR1020120041941A 2012-04-23 2012-04-23 Photovoltaic apparatus KR101349525B1 (en)

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100066928A (en) * 2008-12-10 2010-06-18 엘지이노텍 주식회사 Solar cell and method of fabricating the same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100066928A (en) * 2008-12-10 2010-06-18 엘지이노텍 주식회사 Solar cell and method of fabricating the same

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