KR101558588B1 - Method for fabricating solar cell - Google Patents

Abstract

A manufacturing method of a solar cell device is disclosed. A method of manufacturing a photovoltaic device, comprising: providing a substrate on which an active area and an inactive area surrounding the active area are defined; Disposing a mask in the inactive region; Forming a back electrode layer on the active region in a state where the mask is disposed; Forming a light absorption layer on the back electrode layer in a state where the mask is disposed; Forming a window layer on the light absorbing layer in a state where the mask is disposed; Forming a groove pattern in the back electrode layer, the light absorbing layer, and the window layer along the outline of the mask; And removing the mask.

edge, deletion, mask, pile

Description

[0001] METHOD FOR FABRICATING SOLAR CELL [0002]

The embodiment relates to a method of manufacturing a photovoltaic device.

As energy demand has increased in recent years, development of photovoltaic devices that convert solar energy into electrical energy is underway.

Particularly, a CIGS solar cell device as a pn heterojunction device having a substrate structure including a glass substrate, a metal back electrode layer, a p-type CIGS light absorbing layer, a high resistance buffer layer, and an n-type window layer is widely used.

The embodiments are intended to provide a method of easily manufacturing a photovoltaic device with improved efficiency.

A method of manufacturing a photovoltaic device according to an embodiment includes providing a substrate on which an active region and an inactive region surrounding the active region are defined; Disposing a mask in the inactive region; Forming a back electrode layer on the active region in a state where the mask is disposed; Forming a light absorption layer on the back electrode layer in a state where the mask is disposed; Forming a window layer on the light absorbing layer in a state where the mask is disposed; Forming a groove pattern in the back electrode layer, the light absorbing layer, and the window layer along the outline of the mask; And removing the mask.

A method of manufacturing a photovoltaic device according to an embodiment includes depositing layers only on an active region by a mask.

Therefore, the manufacturing method of the photovoltaic device according to the embodiment can define the active region without the process of patterning the outer region of the photovoltaic device such as edge deletion.

In particular, the method of manufacturing a photovoltaic device according to the embodiment can easily define the active region by scribing with a laser or a tip.

Accordingly, the photovoltaic device according to the embodiment can smoothly pattern the outer region of each layer, prevent mechanical damage to the outer region, and realize improved photo-electric conversion efficiency.

In the description of the embodiments, in the case where each substrate, layer, film or electrode is described as being formed "on" or "under" of each substrate, layer, film, , "On" and "under" all include being formed "directly" or "indirectly" through "another element". In addition, the upper or lower reference of each component is described with reference to the drawings. The size of each component in the drawings may be exaggerated for the sake of explanation and does not mean the size actually applied.

1 is an exploded perspective view showing a mask, a supporting substrate, and a supporting member. FIGS. 2 to 5 are views showing a process of manufacturing the solar cell according to the embodiment.

Referring to Figures 1 and 2, a mask 20 is disposed on a support substrate 10.

The supporting substrate 10 has a plate shape. The support substrate 10 may be rigid or flexible.

The support substrate 10 may be a plastic substrate, a glass substrate, or a metal substrate. More specifically, the supporting substrate 10 may be a soda lime glass substrate.

The active region AR and the inactive region NAR may be defined on the support substrate 10. In the active region (AR), a component for converting sunlight into electric energy is formed. More specifically, the active region AR is formed with a plurality of layers 200 ... 600 that convert sunlight into electrical energy. More specifically, a plurality of solar cells for converting solar light into electric energy are formed in the active region AR.

The inactive region (NAR) is defined around the active region (AR). The inactive region (NAR) may be defined in an outer region of the support substrate (10). The inactive region (NAR) surrounds the active region (AR).

The mask 20 has a rectangular frame shape and covers the inactive region NAR of the support substrate 10. [ Further, the mask 20 includes an open area OR, and the open area OR corresponds to the active area AR.

That is, the mask 20 is disposed in the inactive region NAR to expose the active region AR.

Examples of the material used for the mask 20 include metals and the like.

The support member 30 is disposed below the support substrate 10. The support member (30) supports the substrate and the mask (20).

The support member 30 has a plate shape. Examples of the material that can be used for the support member 30 include metal, glass, ceramic, and the like.

The support member (30) reinforces the strength of the support substrate (10). For example, the support member 30 may have a higher hardness than the support substrate 10. That is, the support member 30 can prevent the support substrate 10 from being bent.

Further, the support member 30 may have high heat resistance. That is, the support member 30 is less bent at a high temperature.

The coefficient of thermal expansion of the support member 30 may correspond to the thermal expansion coefficient of the mask 20. That is, the support member 30 may have a thermal expansion coefficient substantially equal to that of the mask 20. More specifically, the support member 30, the mask 20, and the support substrate 10 may have substantially the same coefficient of thermal expansion.

The mask 20 and the support member 30 sandwich the support substrate 10. The mask 20 and the support member 30 are coupled to each other. For example, the mask 20 may be fastened to the support member 30 by screws 21 or the like.

3, a back electrode layer 200, a light absorption layer 300, a buffer layer 400, a high resistance buffer layer 500, and a window layer 600 are sequentially deposited on the support substrate 10.

At this time, in the process of depositing the layers 200 to 600, grooves are formed in the respective layers, and the layers 200 to 600 may be divided into a plurality of solar cells.

The back electrode layer 200 is formed by depositing a metal such as molybdenum on the support substrate 10 by a sputtering process. The back electrode layer 200 may be formed by two processes having different process conditions.

An additional layer such as a diffusion barrier may be interposed between the support substrate 10 and the back electrode layer 200.

The light absorption layer 300 may be formed by a sputtering process or an evaporation process.

For example, a copper-indium-gallium-selenide (Cu (In, Ga) Se ₂ ; CIGS system) is formed while simultaneously evaporating copper, indium, gallium, and selenium to form the light absorption layer 300. A method of forming a light absorbing layer 300 of a metal precursor film and a method of forming a metal precursor film by a selenization process are widely used.

When the metal precursor film is formed and then subjected to selenization, a metal precursor film is formed on the back electrode by a sputtering process using a copper target, an indium target, and a gallium target.

Then, the metal precursor film is formed with a light absorbing layer 300 of copper-indium-gallium-selenide (Cu (In, Ga) Se _2, CIGS system) by a selenization process.

Alternatively, the copper target, the indium target, the sputtering process using the gallium target, and the selenization process may be performed simultaneously.

Alternatively, the CIS-based or CIG-based optical absorption layer 300 can be formed by using only a copper target and an indium target, or by a sputtering process and a selenization process using a copper target and a gallium target.

The buffer layer 400 may be formed by depositing cadmium sulfide on the light absorption layer 300 by a chemical bath deposition (CBD) method.

Then, zinc oxide is deposited on the buffer layer 400 by a sputtering process or the like, and the high-resistance buffer layer 500 is formed.

Thereafter, a window layer 600 is formed on the high-resistance buffer layer 500. In order to form the window layer 600, a transparent conductive material is deposited on the high-resistance buffer layer 500. Examples of the transparent conductive material include aluminum-doped zinc oxide and the like.

At this time, the back electrode layer 200, the light absorption layer 300, the buffer layer 400, and the high resistance buffer layer 500 may be deposited on the mask 20 and the side surface of the mask 20.

Referring to FIG. 4, a separation groove pattern 11 is formed in the layers 200 ... 600. The separation groove pattern 11 is formed corresponding to the inner surface 21 of the mask 20.

More specifically, the separation groove pattern 11 is spaced apart from the inner surface 21 of the mask 20 by a predetermined distance, and extends along the inner surface 21 of the mask 20. That is, when viewed in plan, the separation groove pattern 11 is formed inside the mask 20.

The separation groove pattern 11 exposes the upper surface of the support substrate 10. The width of the separation groove pattern 11 may be about 100 탆 to about 1000 탆.

The distance W between the separation groove pattern 11 and the inner surface 21 of the mask 20 may be about 10 탆 to about 100 탆.

By the separation groove pattern 11, the active region AR is defined. That is, the separation groove pattern 11 surrounds the active region AR.

The separation groove pattern 11 may be formed by mechanical scribing or laser.

The dummy pattern 12 is formed by the separation groove pattern 11. The dummy pattern 12 is formed between the separation groove pattern 11 and the mask 20. The dummy pattern 12 is disposed in an inactive region NAR defined around the active region AR.

The width W of the dummy pattern 12 may be about 10 [mu] m to about 100 [mu] m.

Referring to FIG. 5, the mask 20 is detached from the support substrate 10. At this time, the dummy pattern 12 is detached from the support substrate 10 in a state of being attached to the mask 20.

At this time, a part of the dummy pattern 12 may remain on the support substrate 10 to such an extent that it does not affect the performance of the photovoltaic device according to the embodiment.

Accordingly, the inactive region NAR can be defined as a region in which the mask 20 is disposed and no residue is present, and a region in which a part of the dummy pattern 12 remains. That is, residues may remain in the inactive region (NAR) in different amounts depending on the position.

The width W of the dummy pattern 12 can be adjusted so that the mask 20 is easily detached from the supporting substrate 10 in the process of releasing the mask 20.

In the method of manufacturing a photovoltaic device according to the embodiment, the layers 20 200 are stacked only on the active region AR by the mask 20.

Therefore, the manufacturing method of the photovoltaic device according to the embodiment can define the active region AR without patterning the outer region of the photovoltaic device such as edge deletion.

Particularly, the manufacturing method of the photovoltaic device according to the embodiment can easily define the active region AR by laser or scribing with a tip. Particularly, when the separation groove pattern 11 is patterned by a laser, outer edges of the layers 200 to 600 are smoothly patterned, and defects due to cracks are reduced.

Therefore, the embodiment can easily provide a photovoltaic device having an improved power generation efficiency.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, It will be understood that various modifications and applications are possible. For example, each component specifically shown in the embodiments can be modified and implemented. It is to be understood that all changes and modifications that come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

1 is an exploded perspective view showing a mask, a supporting substrate, and a supporting member.

FIGS. 2 to 5 are views showing a process of manufacturing the solar cell according to the embodiment.

Claims (6)

Providing a substrate on which an active region and an inactive region surrounding the active region are defined; Disposing a mask in the inactive region; Forming a back electrode layer on the substrate with the mask disposed thereon; Forming a light absorption layer on the back electrode layer in a state where the mask is disposed; Forming a window layer on the light absorbing layer in a state where the mask is disposed; Forming a groove pattern in the back electrode layer, the light absorbing layer, and the window layer along the outline of the mask; And Removing the mask, In the step of forming the groove pattern, the groove pattern is spaced apart from the inner surface of the mask and extends along the inner surface of the mask, Wherein the groove pattern exposes an upper surface of the substrate, A dummy pattern is formed between the groove pattern and the mask, Wherein the dummy pattern is disposed in the inactive region, Wherein in the step of removing the mask, the dummy pattern is separated from the substrate while attached to the mask. The method of claim 1, wherein the step of disposing the mask Disposing a support member under the substrate; Disposing the substrate between the support member and the mask; And And fixing the support member and the mask to each other. 2. The method of claim 1, wherein the groove pattern is formed along a boundary between the active region and the inactive region. The method of manufacturing a solar cell power generating apparatus according to claim 1, wherein the groove pattern has a width of 100 to 1000 탆. delete The method of manufacturing a solar power generating device according to claim 1, wherein the width of the dummy pattern is 10 to 100 탆.

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