JP4971869B2 - Adhesive film breaker - Google Patents

Adhesive film breaker Download PDF

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JP4971869B2
JP4971869B2 JP2007126994A JP2007126994A JP4971869B2 JP 4971869 B2 JP4971869 B2 JP 4971869B2 JP 2007126994 A JP2007126994 A JP 2007126994A JP 2007126994 A JP2007126994 A JP 2007126994A JP 4971869 B2 JP4971869 B2 JP 4971869B2
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wafer
adhesive film
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JP2008283056A (en
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貢一 三谷
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Disco Corp
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本発明は、ウエーハの裏面に装着されたダイボンディング用の接着フィルムをストリートに沿って破断して分割するための接着フィルム破断装置に関するものである。   The present invention relates to an adhesive film breaking device for breaking and dividing a die bonding adhesive film mounted on the back surface of a wafer along a street.

半導体デバイス製造工程においては、略円板形状の半導体ウエーハの表面に格子状に配列されたストリートと称される分割予定ラインによって複数の領域が区画され、この区画された領域にIC,LSI等のデバイスを形成する。そして、半導体ウエーハを分割予定ラインに沿って切断することによりデバイスが形成された領域を分割して個々の半導体チップ(デバイス)を製造している。個々に分割された半導体チップは、その裏面にエポキシ樹脂等で形成された厚さ20〜40μmのダイアタッチフィルムと称されるダイボンディング用の接着フィルムが装着され、この接着フィルムを介して半導体チップを支持するダイボンディングフレームに加熱することによりボンディングされる。   In the semiconductor device manufacturing process, a plurality of regions are partitioned by dividing lines called streets arranged in a grid on the surface of a substantially disk-shaped semiconductor wafer, and ICs, LSIs, etc. are partitioned in the partitioned regions. Form the device. Each semiconductor chip (device) is manufactured by dividing the region in which the device is formed by cutting the semiconductor wafer along the division line. Each of the divided semiconductor chips is mounted with a die bonding adhesive film called a die attach film having a thickness of 20 to 40 μm formed of epoxy resin or the like on the back surface, and the semiconductor chip is interposed through the adhesive film. Bonding is performed by heating to a die bonding frame that supports the substrate.

一方、半導体ウエーハ等の板状の被加工物を分割する方法として、近年にあっては、被加工物に対して透過性を有するパルスレーザ光線を用い、分割すべき領域の内部に集光点を合せてパルスレーザ光線を照射するレーザ加工方法が試みられている。このレーザ加工方法を用いた分割方法は、例えば特許文献1に示されるように、被加工物の一方の面側から内部に集光点を合せて被加工物に対して透過性を有する赤外光領域のパルスレーザ光線を照射し、被加工物の内部に分割予定ラインに沿って変質層を連続的に形成し、この変質層が形成されることで強度が低下した分割予定ラインに沿って外力を加えることによって、被加工物を分割するものである。   On the other hand, as a method for dividing a plate-like workpiece such as a semiconductor wafer, in recent years, a condensing point is used inside a region to be divided by using a pulsed laser beam having transparency to the workpiece. A laser processing method for irradiating a pulsed laser beam in combination is tried. A dividing method using this laser processing method is, for example, as shown in Patent Document 1, an infrared having a condensing point from one side of a workpiece to the inside and having transparency to the workpiece. Irradiate a pulse laser beam in the optical region to continuously form a deteriorated layer along the planned dividing line inside the workpiece, and along the planned dividing line whose strength has been reduced by the formation of this modified layer. The workpiece is divided by applying an external force.

ここで、接着フィルムが貼着された半導体ウエーハの場合、接着フィルムは非常に柔軟な糊状物質によって形成されているため、接着フィルム側が貼着された保護テープを拡張すると、接着フィルムも伸びてしまい接着フィルム自体を確実に破断することが困難となる。そこで、接着フィルムを冷却する冷却手段を備え、冷却しながら破断を行うことで接着フィルムが伸びずに破断されるようにした破断方法も試みられている(例えば、特許文献2参照)。   Here, in the case of a semiconductor wafer to which an adhesive film is attached, the adhesive film is formed of a very flexible paste-like substance. Therefore, when the protective tape to which the adhesive film side is attached is expanded, the adhesive film also stretches. This makes it difficult to reliably break the adhesive film itself. Therefore, a rupture method is also attempted in which a cooling means for cooling the adhesive film is provided and the adhesive film is ruptured without being stretched by rupturing while cooling (see, for example, Patent Document 2).

特許第3408805号公報Japanese Patent No. 3408805 特開2007−27250号公報JP 2007-27250 A

しかしながら、ウエーハは、環状のフレームに装着された保護テープの表面に貼着された接着フィルム上に裏面側を貼着させることで、裏面側に接着フィルムが貼着されるが、このような貼着作業を自動貼着機で行う場合には、位置ずれ等を考慮して、接着フィルムの外径はウエーハ外径より若干大きめ(数mm程度)に形成される。これにより、接着フィルムの貼着状態では、接着フィルムの一部がウエーハ外にはみ出したはみ出し部を生ずる。このため、接着フィルムを冷却しつつ保護テープを拡張して接着フィルムを破断しようとする際に、ウエーハ外にはみ出している接着フィルムのはみ出し部分が冷却されて硬くなるため、保護テープの拡張と同時に接着フィルムのはみ出し部分が破断して剥がれ、ウエーハ上に乗ったり周囲に飛散したりしてしまい、半導体チップに不良品を発生させてしまう等の不具合がある。   However, the wafer is attached to the back side by sticking the back side to the adhesive film attached to the surface of the protective tape attached to the annular frame. When the attaching operation is performed by an automatic attaching machine, the outer diameter of the adhesive film is formed slightly larger (about several mm) than the outer diameter of the wafer in consideration of misalignment and the like. Thereby, in the sticking state of the adhesive film, a protruding portion in which a part of the adhesive film protrudes outside the wafer is generated. For this reason, when trying to break the adhesive film by expanding the protective tape while cooling the adhesive film, the protruding part of the adhesive film that protrudes outside the wafer is cooled and hardened, so that the protective tape is expanded simultaneously. The protruding part of the adhesive film is broken and peeled off, and it may get on the wafer or scatter around the wafer, causing a defective product on the semiconductor chip.

本発明は、上記に鑑みてなされたものであって、ウエーハ外にはみ出すはみ出し部を有する接着フィルムの場合に、該はみ出し部での破断による飛散等を防止してストリートに沿った破断を確保することができる接着フィルム破断装置を提供することを目的とする。   The present invention has been made in view of the above, and in the case of an adhesive film having a protruding portion that protrudes outside the wafer, the breakage along the street is ensured by preventing scattering or the like due to the breaking at the protruding portion. An object of the present invention is to provide an adhesive film breaking device that can be used.

上述した課題を解決し、目的を達成するために、本発明にかかる接着フィルム破断装置は、表面に複数のストリートが格子状に形成されるとともに該複数のストリートによって区画された複数の領域にデバイスが形成されたウエーハの裏面に装着されてウエーハ外径より大きな外径によるはみ出し部を有する接着フィルムを、環状のフレームに装着された保護テープの表面に貼着された状態で前記ストリートに沿って破断する接着フィルム破断装置であって、前記フレームを保持する保持面を有するフレーム保持手段と、該フレーム保持手段に保持された前記フレームに装着された前記保護テープにおけるウエーハが貼着されているウエーハ貼着領域に作用する押圧面を有するウエーハ押圧手段と、該ウエーハ押圧手段を前記保持面より下方の退避位置から前記保持面より上方の押圧位置に移動させる進退手段と、前記フレーム保持手段、ウエーハ押圧手段および進退手段を囲繞する筐体と、該筐体の内部を冷却する冷却手段と、前記接着フィルムの前記ウエーハ外にはみ出した前記はみ出し部を覆うように配設された環状の気体噴出手段と、を備えることを特徴とする。   In order to solve the above-described problems and achieve the object, the adhesive film breaking device according to the present invention has a plurality of streets formed in a lattice shape on the surface and a device in a plurality of regions partitioned by the plurality of streets. Attached to the back surface of the wafer formed with an adhesive film having a protruding portion with an outer diameter larger than the outer diameter of the wafer along the street in a state of being adhered to the surface of the protective tape attached to the annular frame An apparatus for breaking an adhesive film for breaking, comprising: a frame holding means having a holding surface for holding the frame; and a wafer to which a wafer in the protective tape attached to the frame held by the frame holding means is attached Wafer pressing means having a pressing surface acting on the sticking area, and the wafer pressing means below the holding surface Advancement / retraction means for moving from the retracted position to a pressing position above the holding surface, a casing surrounding the frame holding means, wafer pressing means, and advancement / retraction means, cooling means for cooling the inside of the casing, and the bonding And an annular gas jetting means disposed so as to cover the protruding portion of the film that protrudes outside the wafer.

本発明にかかる接着フィルム破断装置は、基本的には、筐体の内部を冷却手段によって冷却し、接着フィルムを冷却状態で硬くして破断することによってストリートに沿った破断を可能とするが、この際、接着フィルムのウエーハ外にはみ出したはみ出し部に対しては環状の気体噴出手段によって気体を噴出させ、はみ出し部が冷却され硬化するのを防止して糊状状態に維持することで、保護テープ拡張時に、はみ出し部の破断による飛散を防止することができるという効果を奏する。   The adhesive film breaking device according to the present invention is basically capable of breaking along the street by cooling the inside of the housing with a cooling means and hardening the adhesive film in a cooled state to break it. At this time, the protruding portion that protrudes outside the wafer of the adhesive film is protected by allowing gas to be blown out by an annular gas blowing means and preventing the protruding portion from being cooled and hardened and maintained in a paste-like state. At the time of tape expansion, there is an effect that scattering due to breakage of the protruding portion can be prevented.

以下、本発明を実施するための最良の形態である接着フィルム破断装置の実施の形態を、図面を参照して詳細に説明する。図1は、本実施の形態の接着フィルム破断装置の構成例を示す斜視図であり、図2は、その分解斜視図であり、図3は、気体噴出手段を裏返して示す斜視図であり、図4〜図6は、接着フィルム破断工程を工程順に示す縦断側面図である。   Hereinafter, an embodiment of an adhesive film breaking device which is the best mode for carrying out the present invention will be described in detail with reference to the drawings. FIG. 1 is a perspective view showing a configuration example of the adhesive film breaking device of the present embodiment, FIG. 2 is an exploded perspective view thereof, and FIG. 3 is a perspective view showing the gas blowing means upside down. 4 to 6 are longitudinal side views showing the adhesive film breaking step in the order of steps.

まず、図2を参照して、破断対象となる接着フィルム等について説明する。本実施の形態の接着フィルム1は、表面に複数のストリート2が格子状に形成されるとともにこれら複数のストリート2によって区画された複数の領域にデバイス3が形成されたウエーハ4の裏面に装着されて、ダイボンディング用に利用されるものである。ここで、ウエーハ4は、パルスレーザ光線の照射等による変質層形成工程並びにウエーハ分割工程を経て、ストリート2に沿って分割済みのものが用いられる。このような変質層形成工程等は、例えば特許文献1等で公知であるので、詳細な説明を省略する。そして、このようなウエーハ4は、環状のフレーム5の開口部5aを覆うように外周部が装着された保護テープ6の表面に貼着された接着フィルム1上に貼着される。このような接着フィルム1に対するウエーハ4の貼着は、自動貼着機を用いて行われるため、接着フィルム1の外径は、ウエーハ4の外径よりも若干(数mm程度)大きめに形成され、ウエーハ4が貼着された状態でウエーハ4外に若干はみ出すはみ出し部1aを有することなる。また、保護テープ6は、接着フィルム1よりも凝固点の低い材質からなる。   First, an adhesive film or the like to be broken will be described with reference to FIG. The adhesive film 1 of the present embodiment is mounted on the back surface of a wafer 4 in which a plurality of streets 2 are formed in a lattice shape on the surface and devices 3 are formed in a plurality of regions partitioned by the plurality of streets 2. And used for die bonding. Here, the wafer 4 that has been divided along the street 2 through the deteriorated layer forming step and the wafer dividing step by irradiation with a pulsed laser beam or the like is used. Such a deteriorated layer forming step and the like are known in, for example, Patent Document 1 and the like, and thus detailed description thereof is omitted. And such a wafer 4 is affixed on the adhesive film 1 affixed on the surface of the protective tape 6 with which the outer peripheral part was mounted | worn so that the opening part 5a of the cyclic | annular frame 5 might be covered. Since the wafer 4 is attached to the adhesive film 1 using an automatic sticking machine, the outer diameter of the adhesive film 1 is slightly larger (a few millimeters) than the outer diameter of the wafer 4. In this state, the protruding portion 1a slightly protrudes outside the wafer 4 in a state where the wafer 4 is adhered. The protective tape 6 is made of a material having a lower freezing point than the adhesive film 1.

このようなウエーハ4の裏面に貼着された接着フィルム1に対する破断装置は、フレーム保持手段10と、ウエーハ押圧手段20と、フレーム規制手段30と、進退手段40と、筐体50と、冷却手段60と、気体噴出手段70とを備える。   Such a breaking device for the adhesive film 1 adhered to the back surface of the wafer 4 includes a frame holding means 10, a wafer pressing means 20, a frame restricting means 30, an advance / retreat means 40, a housing 50, and a cooling means. 60 and gas ejection means 70 are provided.

フレーム保持手段10は、例えばSUS等からなる矩形プレート状の保持部材11を備える。ここで、保持部材11は、中央部に環状のフレーム5の開口部5aの内径と略同等の内径を有する開口13を備え、この開口13の周囲の上面が環状のフレーム5を保持する保持面14として機能する。また、保持部材11の四隅下方には、保持部材11を待機位置と破断位置との間で昇降移動させるエアーピストン機構15を備える。   The frame holding means 10 includes a rectangular plate-like holding member 11 made of, for example, SUS. Here, the holding member 11 includes an opening 13 having an inner diameter substantially equal to the inner diameter of the opening 5 a of the annular frame 5 at the center, and the upper surface around the opening 13 holds the annular frame 5. 14 functions. In addition, below the four corners of the holding member 11, an air piston mechanism 15 that moves the holding member 11 up and down between a standby position and a breaking position is provided.

また、ウエーハ押圧手段20は、フレーム保持手段10の保持面14に保持されたフレーム5に装着された保護テープ6におけるウエーハ4が貼着されているウエーハ貼着領域に作用する円形の押圧面21を有する。この押圧面21は、開口13の内径よりも小さな半径で形成されて、開口13内を昇降自在なものである。ここで、押圧面21の外周部には、環状溝22が形成され、この環状溝22に沿って複数の拡張補助ローラ23が回転自在に配設されている。これら拡張補助ローラ23は、ウエーハ押圧手段20を押圧位置に移動して保護テープ6を拡張する際に生じる摩擦抵抗を軽減させ、引張力を均等に作用させるためのものである。   Further, the wafer pressing means 20 is a circular pressing surface 21 that acts on the wafer attaching region where the wafer 4 is attached to the protective tape 6 attached to the frame 5 held on the holding surface 14 of the frame holding means 10. Have The pressing surface 21 is formed with a radius smaller than the inner diameter of the opening 13 and can move up and down in the opening 13. Here, an annular groove 22 is formed in the outer peripheral portion of the pressing surface 21, and a plurality of auxiliary expansion rollers 23 are rotatably disposed along the annular groove 22. These extension auxiliary rollers 23 are used for reducing the frictional resistance generated when the wafer pressing means 20 is moved to the pressing position and expanding the protective tape 6 so that the tensile force acts equally.

進退手段40は、ウエーハ押圧手段20の下部側に連結されて、このウエーハ押圧手段20の押圧面21を保持面14より下方の退避位置から保持面14より上方の押圧位置に移動させるためのものであり、例えばサーボモータ等を用いて構成されている。   The advancing / retreating means 40 is connected to the lower side of the wafer pressing means 20 for moving the pressing surface 21 of the wafer pressing means 20 from a retracted position below the holding surface 14 to a pressing position above the holding surface 14. For example, the servo motor is used.

筐体50は、フレーム保持手段10とウエーハ押圧手段20と進退手段40とを囲繞する、上方開口の直方体状のハウジング51と、このハウジング51の上方開口部をヒンジ52によって開閉自在に閉塞する箱状の蓋体53とからなり、内部に冷却室54を形成するためのものである。ここで、ハウジング51の一部には、フレーム5等を出し入れするためのシャッタ機構55が開閉自在に設けられている。   The housing 50 surrounds the frame holding means 10, the wafer pressing means 20, and the advance / retreat means 40, and has a rectangular parallelepiped housing 51 and a box in which the upper opening of the housing 51 is closed by a hinge 52 so as to be opened and closed. It is for forming the cooling chamber 54 inside. Here, a shutter mechanism 55 for taking in and out the frame 5 and the like is provided in a part of the housing 51 so as to be freely opened and closed.

また、フレーム規制手段30は、ハウジング51と蓋体52との間に配設されて、フレーム保持手段10を上昇させることで保持面14上に載置されたフレーム5を保持面14とで挟持するためのものであり、矩形板状に形成され、中央部に開口部5aや開口13と同等の大きさの円形状の開口31を有する。このフレーム規制手段30は、冷却気体導入口32と冷却気体排出口33とを備える。   The frame restricting means 30 is disposed between the housing 51 and the lid body 52, and the frame 5 placed on the holding surface 14 is held between the holding surface 14 by raising the frame holding means 10. This is formed in a rectangular plate shape, and has a circular opening 31 having a size equivalent to that of the opening 5a and the opening 13 at the center. The frame regulating means 30 includes a cooling gas introduction port 32 and a cooling gas discharge port 33.

一方、冷却手段60は、冷却室53内を例えば0℃程度に冷却するためのものであり、冷却気体供給手段61と、この冷却気体供給手段61と冷却気体導入口32との間を接続する冷却気体供給管62と、冷却気体排出口33と冷却気体供給手段61との間を接続する冷却気体排出管63とを備える。   On the other hand, the cooling means 60 is for cooling the inside of the cooling chamber 53 to, for example, about 0 ° C., and connects the cooling gas supply means 61 and the cooling gas supply means 61 and the cooling gas inlet 32. A cooling gas supply pipe 62 and a cooling gas discharge pipe 63 connecting the cooling gas discharge port 33 and the cooling gas supply means 61 are provided.

さらに、気体噴出手段70は、接着フィルム1のウエーハ4外にはみ出したはみ出し部1aを覆うように配設されて、はみ出し部1aに向けて15〜30℃程度の気体を噴出させるよう形成された環状体71からなり、フレーム規制手段30の開口31周りの位置に配設されている。ここで、気体噴出手段70は、はみ出し部1aの真上に対応する環状位置に複数個の噴出ノズル72が下向きに形成されているとともに、内部にこれら噴出ノズル72に連通する気体導入路73を有する。この気体導入路73には、外部の図示しない気体供給手段に接続するための図示しない気体供給管が連結されている。   Further, the gas jetting means 70 is disposed so as to cover the protruding portion 1a protruding outside the wafer 4 of the adhesive film 1, and is formed so as to jet a gas of about 15 to 30 ° C. toward the protruding portion 1a. It consists of an annular body 71 and is disposed at a position around the opening 31 of the frame restricting means 30. Here, the gas ejection means 70 has a plurality of ejection nozzles 72 formed downward at an annular position corresponding to the position directly above the protruding portion 1a, and a gas introduction path 73 communicating with these ejection nozzles 72 therein. Have. The gas introduction path 73 is connected to a gas supply pipe (not shown) for connecting to an external gas supply means (not shown).

このような構成において、接着フィルム1の破断処理について工程順に説明する。まず、図4に示すように、ウエーハ押圧手段20を退避位置に下降させるとともに、フレーム保持手段10を待機位置に下降させた状態で、シャッタ機構55を開放させて、保護テープ6上に接着フィルム1を介して貼着された分割済みのウエーハ4を有するフレーム5を、保持面14上の所定位置に導入させる。   In such a configuration, the breaking process of the adhesive film 1 will be described in the order of steps. First, as shown in FIG. 4, while the wafer pressing means 20 is lowered to the retracted position and the frame holding means 10 is lowered to the standby position, the shutter mechanism 55 is opened, and the adhesive film is formed on the protective tape 6. The frame 5 having the divided wafer 4 attached through 1 is introduced into a predetermined position on the holding surface 14.

ついで、図5に示すように、シャッタ機構55を閉塞させた状態で、エアーピストン機構15によってフレーム保持手段10を破断位置まで上昇させることで、保持面14上に載置されたフレーム5を保持面14とフレーム規制手段30とで挟持させる。この動作に並行して、進退手段40を動作させてウエーハ押圧手段20を押圧位置に向けてゆっくり上昇移動させる。また、冷却手段60によって筐体50内に冷却気体を導入させることで、冷却室54内を約0℃に冷却するととともに、気体噴出手段70によって15〜30℃程度の気体74を噴出ノズル72から接着フィルム1のはみ出し部1aに向けて上方から噴射させる。   Next, as shown in FIG. 5, the frame 5 placed on the holding surface 14 is held by raising the frame holding means 10 to the breaking position by the air piston mechanism 15 with the shutter mechanism 55 closed. It is held between the surface 14 and the frame restricting means 30. In parallel with this operation, the advancing / retreating means 40 is operated to move the wafer pressing means 20 slowly upward toward the pressing position. In addition, the cooling gas is introduced into the housing 50 by the cooling means 60 to cool the inside of the cooling chamber 54 to about 0 ° C., and the gas jetting means 70 causes a gas 74 of about 15 to 30 ° C. to be discharged from the ejection nozzle 72. The adhesive film 1 is sprayed from above toward the protruding portion 1a.

この状態で、図6に示すように、進退手段40によって押圧手段20の押圧面21の位置を保持面14の位置より高い押圧位置まで所定の速度でゆっくり移動させることで、保護テープ6を放射状に拡張させる。すなわち、保護テープ6は、凝固点が低いため、約0℃の雰囲気中でも硬くならず、上昇変位する押圧面21による引張力を受けて放射状に拡張する。これにより、保護テープ6上に貼着されている接着フィルム1に対しても放射状に引張力が作用する。このとき、接着フィルム1の大半は、冷却室54による冷却雰囲気にあり、特に分割済みのウエーハ4のストリート2に対応する部分は露出により冷却されやすく硬くなっているので、引張力を受けた場合に伸びることなく、ストリート2に沿って確実に破断される。一方、接着フィルム1にあっても、ウエーハ4からはみ出したはみ出し部1aは、上側の噴出ノズル72から15〜30℃程度の気体74が噴出されることで、冷却されて硬くなるのが防止され、糊状状態を維持するため、保護テープ6を介してはみ出し部1aに引張力が作用しても保護テープ6と同様に伸びることとなる。よって、はみ出し部1a部分が硬くなって破断し、周囲に飛散するような不具合を生ずることがなくなる。   In this state, as shown in FIG. 6, the protective tape 6 is radially moved by slowly moving the position of the pressing surface 21 of the pressing means 20 to a pressing position higher than the position of the holding surface 14 by the advance / retreat means 40. To expand. That is, since the freezing point of the protective tape 6 is low, the protective tape 6 does not become hard even in an atmosphere of about 0 ° C., and expands radially by receiving a tensile force by the pressing surface 21 that is displaced upward. Thereby, a tensile force acts radially also on the adhesive film 1 stuck on the protective tape 6. At this time, most of the adhesive film 1 is in a cooling atmosphere by the cooling chamber 54, and in particular, when the portion corresponding to the street 2 of the divided wafer 4 is hardened by exposure and hardened, when receiving a tensile force It is surely broken along the street 2 without extending. On the other hand, even in the adhesive film 1, the protruding portion 1 a that protrudes from the wafer 4 is prevented from being cooled and hardened by the gas 74 of about 15 to 30 ° C. being ejected from the upper ejection nozzle 72. In order to maintain the paste-like state, even if a tensile force acts on the protruding portion 1 a via the protective tape 6, it extends in the same manner as the protective tape 6. Therefore, the protruding portion 1a portion becomes hard and breaks, and there is no problem of scattering around.

本発明は、上述した実施の形態に限らず、本発明の趣旨を逸脱しない範囲であれば、種々の変形が可能である。例えば、本実施の形態では、例えば50μm以上の如く比較的厚くて分割済みのウエーハ4が接着フィルム1上に貼着され、接着フィルム1のみの破断を行う場合を例に挙げて説明したが、例えば50μm以下の如く比較的薄いウエーハの場合であれば、パルスレーザ光線の照射等による変質層形成工程が完了しウエーハ未分割のウエーハが接着フィルム上に貼着されたものを対象とし、ウエーハ分割と接着フィルム破断とを同時に行う場合にも、同様に適用することができる。   The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the present invention. For example, in the present embodiment, for example, a case where a relatively thick and divided wafer 4 such as 50 μm or more is pasted on the adhesive film 1 and only the adhesive film 1 is broken is described as an example. For example, in the case of a relatively thin wafer such as 50 μm or less, the wafer is divided into wafers that have been subjected to the process of forming a deteriorated layer by irradiation with a pulsed laser beam and the like, and the wafer that has not been divided is attached to an adhesive film. The present invention can be similarly applied to the case where the adhesive film breakage and the adhesive film breakage are performed simultaneously.

本発明の実施の形態の接着フィルム破断装置の構成例を示す斜視図である。It is a perspective view which shows the structural example of the adhesive film fracture | rupture apparatus of embodiment of this invention. 図1の分解斜視図である。FIG. 2 is an exploded perspective view of FIG. 1. 気体噴出手段を裏返して示す斜視図である。It is a perspective view which turns over and shows a gas ejection means. 接着フィルム破断工程の初期工程を示す縦断側面図である。It is a vertical side view which shows the initial stage process of an adhesive film fracture | rupture process. 接着フィルム破断工程の過渡工程を示す縦断側面図である。It is a vertical side view which shows the transient process of an adhesive film fracture | rupture process. 接着フィルム破断工程を示す縦断側面図である。It is a vertical side view which shows an adhesive film fracture | rupture process.

符号の説明Explanation of symbols

1 接着フィルム
1a はみ出し部
2 ストリート
3 デバイス
4 ウエーハ
5 フレーム
6 保護テープ
10 フレーム保持手段
14 保持面
20 ウエーハ押圧手段
21 押圧面
40 進退手段
50 筐体
60 冷却手段
70 気体噴出手段
DESCRIPTION OF SYMBOLS 1 Adhesive film 1a Overhang | projection part 2 Street 3 Device 4 Wafer 5 Frame 6 Protective tape 10 Frame holding means 14 Holding surface 20 Wafer pressing means 21 Pressing surface 40 Advancement / retraction means 50 Case 60 Cooling means 70 Gas ejection means

Claims (1)

表面に複数のストリートが格子状に形成されるとともに該複数のストリートによって区画された複数の領域にデバイスが形成されたウエーハの裏面に装着されて該ウエーハ外径より大きな外径によるはみ出し部を有する接着フィルムを、環状のフレームに装着された保護テープの表面に貼着された状態で前記ストリートに沿って破断する接着フィルム破断装置であって、
前記フレームを保持する保持面を有するフレーム保持手段と、
該フレーム保持手段に保持された前記フレームに装着された前記保護テープにおける前記ウエーハが貼着されているウエーハ貼着領域に作用する押圧面を有するウエーハ押圧手段と、
該ウエーハ押圧手段を前記保持面より下方の退避位置から前記保持面より上方の押圧位置に移動させる進退手段と、
前記フレーム保持手段、ウエーハ押圧手段および進退手段を囲繞する筐体と、
該筐体の内部を冷却する冷却手段と、
前記接着フィルムの前記ウエーハ外にはみ出した前記はみ出し部を覆うように配設された環状の気体噴出手段と、
を備えることを特徴とする接着フィルム破断装置。
A plurality of streets are formed in a lattice shape on the front surface, and a device is formed on a plurality of regions partitioned by the plurality of streets and attached to the back surface of the wafer, and has a protruding portion with an outer diameter larger than the outer diameter of the wafer. An adhesive film breaking device for breaking an adhesive film along the street in a state of being attached to the surface of a protective tape attached to an annular frame,
Frame holding means having a holding surface for holding the frame;
A wafer pressing means having a pressing surface acting on a wafer attaching region to which the wafer in the protective tape attached to the frame held by the frame holding means is attached;
Advancing / retreating means for moving the wafer pressing means from a retracted position below the holding surface to a pressing position above the holding surface;
A housing surrounding the frame holding means, wafer pressing means and advance / retreat means;
Cooling means for cooling the inside of the housing;
An annular gas jetting means disposed so as to cover the protruding portion of the adhesive film that protrudes outside the wafer;
An adhesive film breaking device comprising:
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JP2019016729A (en) * 2017-07-10 2019-01-31 株式会社ディスコ Tape extension device
JP7217408B2 (en) * 2020-05-26 2023-02-03 株式会社東京精密 Temperature imparting device and temperature imparting method

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