JP4970400B2 - 発光素子の製造方法 - Google Patents
発光素子の製造方法 Download PDFInfo
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- JP4970400B2 JP4970400B2 JP2008263583A JP2008263583A JP4970400B2 JP 4970400 B2 JP4970400 B2 JP 4970400B2 JP 2008263583 A JP2008263583 A JP 2008263583A JP 2008263583 A JP2008263583 A JP 2008263583A JP 4970400 B2 JP4970400 B2 JP 4970400B2
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- Japan
- Prior art keywords
- light
- transparent substrate
- semiconductor layer
- light emitting
- emitting element
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Description
2 透明基板
3 半導体層
3a 微細凹凸構造
5 結像マスク
7 パターニング材料
L 所定の光
L2 異なる透過率の光
Claims (1)
- 透明基板の一面に半導体層を形成する第1工程と、
前記透明基板の他面側から所定の光を照射して、前記透明基板と前記半導体層とを分離する第2工程とを備え、
前記第2工程は、所定の光として、異なる透過率の光を用いて光の強度分布を制御して、前記半導体層の前記透明基板の一面との界面に微細凹凸構造を形成するものであり、
前記光の強度分布を制御する手段として、前記透明基板の他面に、組成比が可変であるパターニング材料をエピタキシャル成長させ、このパターニング材料により光の透過率を制御することを特徴とする発光素子の製造方法。
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JP2008263583A JP4970400B2 (ja) | 2008-10-10 | 2008-10-10 | 発光素子の製造方法 |
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JP2008263583A JP4970400B2 (ja) | 2008-10-10 | 2008-10-10 | 発光素子の製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004216338A Division JP4241536B2 (ja) | 2004-07-23 | 2004-07-23 | 発光素子の製造方法 |
Publications (2)
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JP2009010426A JP2009010426A (ja) | 2009-01-15 |
JP4970400B2 true JP4970400B2 (ja) | 2012-07-04 |
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ID=40325116
Family Applications (1)
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JP2008263583A Expired - Fee Related JP4970400B2 (ja) | 2008-10-10 | 2008-10-10 | 発光素子の製造方法 |
Country Status (1)
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JP (1) | JP4970400B2 (ja) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6218709A (ja) * | 1985-07-18 | 1987-01-27 | Fujitsu Ltd | 光励起成長方法 |
JP4734770B2 (ja) * | 2001-06-12 | 2011-07-27 | ソニー株式会社 | 樹脂形成素子の製造方法、画像表示装置の製造方法、および照明装置の製造方法 |
JP3659201B2 (ja) * | 2001-07-11 | 2005-06-15 | ソニー株式会社 | 半導体発光素子、画像表示装置、照明装置及び半導体発光素子の製造方法 |
JP2003188142A (ja) * | 2001-12-19 | 2003-07-04 | Sony Corp | 半導体素子の製造方法及び半導体素子 |
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2008
- 2008-10-10 JP JP2008263583A patent/JP4970400B2/ja not_active Expired - Fee Related
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