JP4970267B2 - 珪素およびゲルマニウムの核原子付き水素化合物、および同化合物の合成法 - Google Patents

珪素およびゲルマニウムの核原子付き水素化合物、および同化合物の合成法 Download PDF

Info

Publication number
JP4970267B2
JP4970267B2 JP2007531151A JP2007531151A JP4970267B2 JP 4970267 B2 JP4970267 B2 JP 4970267B2 JP 2007531151 A JP2007531151 A JP 2007531151A JP 2007531151 A JP2007531151 A JP 2007531151A JP 4970267 B2 JP4970267 B2 JP 4970267B2
Authority
JP
Japan
Prior art keywords
sih
geh
oso
silicon
nmr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007531151A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008513320A (ja
Inventor
クーヴェタキス、ジョン
ジェイ．ザ サード リッター、コール
トゥレ、ジョン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arizona State University ASU
Original Assignee
Arizona State University ASU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arizona State University ASU filed Critical Arizona State University ASU
Publication of JP2008513320A publication Critical patent/JP2008513320A/ja
Application granted granted Critical
Publication of JP4970267B2 publication Critical patent/JP4970267B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B6/00—Hydrides of metals including fully or partially hydrided metals, alloys or intermetallic compounds ; Compounds containing at least one metal-hydrogen bond, e.g. (GeH3)2S, SiH GeH; Monoborane or diborane; Addition complexes thereof
    • C01B6/06—Hydrides of aluminium, gallium, indium, thallium, germanium, tin, lead, arsenic, antimony, bismuth or polonium; Monoborane; Diborane; Addition complexes thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/058—Ge germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Recrystallisation Techniques (AREA)
JP2007531151A 2004-09-14 2004-12-31 珪素およびゲルマニウムの核原子付き水素化合物、および同化合物の合成法 Expired - Fee Related JP4970267B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US61012004P 2004-09-14 2004-09-14
US60/610,120 2004-09-14
PCT/US2004/043854 WO2006031240A1 (en) 2004-09-14 2004-12-31 Hydride compounds with silicon and germanium core atoms and method of synthesizing same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011168526A Division JP2011213594A (ja) 2004-09-14 2011-08-01 珪素およびゲルマニウムの核原子付き水素化合物、および同化合物の合成法

Publications (2)

Publication Number Publication Date
JP2008513320A JP2008513320A (ja) 2008-05-01
JP4970267B2 true JP4970267B2 (ja) 2012-07-04

Family

ID=36060344

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2007531151A Expired - Fee Related JP4970267B2 (ja) 2004-09-14 2004-12-31 珪素およびゲルマニウムの核原子付き水素化合物、および同化合物の合成法
JP2011168526A Pending JP2011213594A (ja) 2004-09-14 2011-08-01 珪素およびゲルマニウムの核原子付き水素化合物、および同化合物の合成法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2011168526A Pending JP2011213594A (ja) 2004-09-14 2011-08-01 珪素およびゲルマニウムの核原子付き水素化合物、および同化合物の合成法

Country Status (4)

Country Link
US (2) US7981392B2 (enExample)
JP (2) JP4970267B2 (enExample)
CN (1) CN101057008B (enExample)
WO (1) WO2006031240A1 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008513979A (ja) * 2004-09-14 2008-05-01 アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティ 基板上でのＳｉ−Ｇｅ半導体材料およびデバイスの成長方法
KR100932821B1 (ko) 2005-03-11 2009-12-21 아리조나 보드 오브 리전트스, 아리조나주의 아리조나 주립대 대행법인 게르마늄규소주석계 화합물, 주형 및 반도체 구조물
CN101365648B (zh) * 2005-11-23 2012-09-26 亚利桑那董事会,代表亚利桑那州立大学行事的法人团体 硅锗氢化物以及制造和使用其的方法
JP5265376B2 (ja) * 2005-11-23 2013-08-14 アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティ 新規な水素化シリコンゲルマニウム、その製造法および使用法
WO2007062096A2 (en) * 2005-11-23 2007-05-31 The Arizona Board Of Regents, A Body Corporate Acting On Behalf Of Arizona State University Silicon-germanium hydrides and methods for making and using same
JP5638387B2 (ja) * 2007-04-02 2014-12-10 アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティＡＲＩＺＯＮＡ ＢＯＡＲＤ ＯＦ ＲＥＧＥＮＴＳ，ａ ｂｏｄｙ ｃｏｒｐｏｒａｔｅ ａｃｔｉｎｇ ｏｎ ｂｅｈａｌｆ ｏｆ ＡＲＩＺＯＮＡ ＳＴＡＴＥ ＵＮＩＶＥＲＳＩＴＹ ハロシリルゲルマンの新規な製造方法および使用方法
US7915104B1 (en) 2007-06-04 2011-03-29 The Arizona Board Of Regents, A Body Corporate Of The State Of Arizona Acting For And On Behalf Of Arizona State University Methods and compositions for preparing tensile strained Ge on Ge1-ySny buffered semiconductor substrates
US20110045646A1 (en) * 2008-04-02 2011-02-24 Arizona Board Of Regents Selective deposition of sige layers from single source of si-ge hydrides
KR101869246B1 (ko) * 2012-01-13 2018-07-20 엘지이노텍 주식회사 발광소자 패키지
CN107316802B (zh) * 2017-06-26 2020-04-28 南京大学 一种高锗含量锗硅薄膜的低温外延制备方法
CN109585504B (zh) * 2018-10-08 2020-12-25 惠科股份有限公司 显示面板及显示面板的制作方法
US11830734B2 (en) * 2021-05-19 2023-11-28 Applied Materials, Inc. Thermal deposition of silicon-germanium
CN116924335A (zh) * 2022-04-02 2023-10-24 烟台万华电子材料有限公司 一种在液氨中反应生产乙锗烷的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2968427A (en) * 1955-06-28 1961-01-17 Meshberg Philip Valve for aerosol container
FR1204724A (fr) * 1957-07-17 1960-01-27 Kali Chemie Ag Procédé d'obtention d'éléments très purs du quatrième groupe du système périodique
EG18056A (en) * 1986-02-18 1991-11-30 Solarex Corp Dispositif feedstock materials useful in the fabrication of hydrogenated amorphous silicon alloys for photo-voltaic devices and other semiconductor devices
US4910153A (en) 1986-02-18 1990-03-20 Solarex Corporation Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices
US4777023A (en) 1986-02-18 1988-10-11 Solarex Corporation Preparation of silicon and germanium hydrides containing two different group 4A atoms
JP3978490B2 (ja) * 2002-08-06 2007-09-19 独立行政法人物質・材料研究機構 シリコンゲルマニウムナノワイヤー集合体
US7594967B2 (en) 2002-08-30 2009-09-29 Amberwave Systems Corporation Reduction of dislocation pile-up formation during relaxed lattice-mismatched epitaxy
JP4074794B2 (ja) * 2002-08-30 2008-04-09 ソタジャパン有限会社 ゲルマニウム合金−シリカ複合体を用いた装身具
US7540920B2 (en) 2002-10-18 2009-06-02 Applied Materials, Inc. Silicon-containing layer deposition with silicon compounds
US7598513B2 (en) * 2003-06-13 2009-10-06 Arizona Board Of Regents, Acting For And On Behalf Of Arizona State University, A Corporate Body Organized Under Arizona Law SixSnyGe1-x-y and related alloy heterostructures based on Si, Ge and Sn
JP2008513979A (ja) 2004-09-14 2008-05-01 アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティ 基板上でのＳｉ−Ｇｅ半導体材料およびデバイスの成長方法
JP5265376B2 (ja) 2005-11-23 2013-08-14 アリゾナ ボード オブ リージェンツ ア ボディー コーポレート アクティング オン ビハーフ オブ アリゾナ ステイト ユニバーシティ 新規な水素化シリコンゲルマニウム、その製造法および使用法
WO2007062096A2 (en) * 2005-11-23 2007-05-31 The Arizona Board Of Regents, A Body Corporate Acting On Behalf Of Arizona State University Silicon-germanium hydrides and methods for making and using same

Also Published As

Publication number Publication date
US7981392B2 (en) 2011-07-19
CN101057008A (zh) 2007-10-17
JP2011213594A (ja) 2011-10-27
JP2008513320A (ja) 2008-05-01
US8568681B2 (en) 2013-10-29
CN101057008B (zh) 2013-07-10
US20120020864A1 (en) 2012-01-26
WO2006031240A1 (en) 2006-03-23
US20070297967A1 (en) 2007-12-27

Similar Documents

Publication Publication Date Title
JP2011213594A (ja) 珪素およびゲルマニウムの核原子付き水素化合物、および同化合物の合成法
Snow et al. Synthesis and characterization of tetrakis (2, 6-diethylphenyl) digermene
US8518360B2 (en) Silicon-germanium hydrides and methods for making and using same
US8524582B2 (en) Silicon-germanium hydrides and methods for making and using same
Ritter et al. Synthesis and Fundamental Studies of (H3Ge) x SiH4-x Molecules: Precursors to Semiconductor Hetero-and Nanostructures on Si
KR102210581B1 (ko) 티오(다이)실란
Maier et al. Flash Pyrolysis of 1, 1, 1‐Trimethyltetrasilane‐Evidence for the Formation of Dibridged Si2H2
JP7177137B2 (ja) ペンタクロロジシランの調製方法及びそれを含む精製された反応生成物
Finch et al. Mixed silyl germyl Group VIA derivatives
KR102621030B1 (ko) 디요오도실란의 제조방법
Durig et al. Infrared and Raman spectra, conformational stability, ab initio calculations, and vibrational assignments for cyclopropyldichlorosilane
Holmes-Smith et al. Trifluoromethylthio and trifluoromethylseleno derivatives of germane and digermane
Tice et al. Ether-like Si–Ge hydrides for applications in synthesis of nanostructured semiconductors and dielectrics
HK1125619B (en) Silicon-germanium hydrides and methods for making and using same
Beck et al. Trifluorotelluroacetyl fluoride, its cyclic dimer and precursors: preparation, characterisation and reactivity
FINCH et al. Society. zyxwvutsrqponmlkjihgfe

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100713

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20101013

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20101020

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20101227

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110201

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110426

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110509

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110801

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120321

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120404

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150413

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees