JP4953803B2 - Mold processing method - Google Patents

Description

  The present invention relates to a mold processing method for forming a mold having a fine pattern shape (fine pattern) by etching a silicon base material and the mold, for example.

  Conventionally, a silicon substrate (substrate to be etched) is etched to form a mold having a fine pattern shape (fine pattern). This method is performed as follows. .

For example, as shown in FIG. 8 (1), a fine pattern is first formed on the surface of the Si substrate 1 by applying a resist film to the silicon substrate (Si substrate) 1 and exposing it, and then Then, a die body having a fine pattern (for example, a hot embossing die 104) is formed by dry-etching the surface of the Si substrate 1 treated with the fine pattern resist film.
Therefore, for example, the hot embossing mold (mold body) 104 having the above-described fine pattern is pressed against a heat-softened resin plate (molded product), and then cooled and released from the mold. The pattern is transferred so that a resin molded product (product) having a fine pattern can be formed. This method is called a hot embossing method (see FIGS. 6 (1), 6 (2), and 6 (3)).

JP 2003-245925

However, when the Si substrate 1 is dry-etched using Deep-RIE (Reactive Ion Etching) which is a kind of dry etching method, the wall surface 102 of the recess 101 formed by dry etching on the Si substrate 1 is: In general, it is easy to form an inversely tapered shape.
In addition, since the etching rate varies depending on the density of the opening 103 having the fine pattern (for example, depending on the size of the opening 103 having the fine pattern in the width direction A), the etching depth (etching depth B) can be efficiently performed. It is customary that they are not evenly aligned (generally called the microloading effect).
Therefore, the following problems occur due to the reverse tapered shape (wall surface 102) in the recess 101 and the different etching depth (B).

That is, at the time of hot embossing (during imprinting), when the resin substrate is pressed and molded using such a die (mold body) 104 made of the Si base material 1, the above-described concave portion 101 is formed in a reverse tapered shape. For this reason, since it becomes an undercut state and it is forcibly removed, the mold (mold body) 104 cannot be efficiently released from the resin plate to obtain a resin molded product (product).
Therefore, when the mold (mold body) 104 is processed, there is an adverse effect that the resin molded product (product) formed by the mold (mold body) 104 cannot be released efficiently.
Further, when the mold (mold body) 104 is processed, there is an adverse effect that the depths of the concave portions 101 formed in the mold (mold body) 104 cannot be made uniform efficiently.

In addition, due to the above-described microloading effect, the etching rate is usually faster when the fine pattern is coarser, and the etching rate is slower when the fine pattern is dense, but the etching depth of the recess 101 is uniform. For example, the height of the resin molded product (convex portion) pressed and transferred to the concave portion 101 of the mold (mold body) 104 cannot be efficiently and uniformly aligned.
Further, for example, when the mold (mold body) is released from the above-described resin plate, it is formed by the reverse taper shape of the recess 101 formed in the above-described mold (mold body) 104 or on the wall surface 102 of the recess 101. Since the resin molded product itself is caught by the scallops (protrusions) 105, the convex portion of the resin molded product may break or extend.
That is, the height of the convex portions in the resin molded product cannot be efficiently and uniformly aligned due to the above-described reverse taper shape (102) or breakage or elongation of the convex portions of the resin molded product due to the scallop 105.
In addition, for example, when molding (pressing / releasing) with a mold (mold body) having an inverted taper-shaped recess 101, the die 104 (recess 101) itself is in an undercut state and cannot be forcibly removed. In some cases, defects such as defects may occur, and the height of the resin molded product (the convex portion) cannot be efficiently and uniformly aligned.
Therefore, there is an adverse effect that a resin molded product (product) having a fine pattern cannot be released efficiently, and a highly reliable and high quality product (resin molded product) cannot be obtained efficiently.
Further, as described above, since the heights of the convex portions in the resin molded product (product) cannot be efficiently and uniformly aligned, the resin molded product (product) having a fine pattern is efficiently released. Since the yield of the product is lowered because it is not possible, the productivity of the product cannot be improved efficiently.

In particular, in the case of molding (pressing / releasing) a fine structure having a high aspect ratio, for example, as a resin molded product having a high aspect ratio (for example, an aspect ratio of 10 or more) (mold having a recess), As described above, in order to avoid excessive force, it is often impossible to efficiently and evenly align the heights of the fine structures (for example, elongated bar-shaped protrusions formed in a high aspect ratio).
In the example shown in FIG. 8A, the aspect ratio is indicated by (B / A).

Further, as shown in FIG. 8 (2), instead of the Si base 1 described above, an SiO ₂ layer (silicon dioxide layer) is used as an etching stop layer on the SOI wafer 21, that is, the two single crystal silicon layers 22 and 23. ) SOI base material 21 in which 24 is sandwiched as an intermediate layer can be used.
In this case, the concave portion 111 having a reverse tapered wall surface is formed (including the scallop) in the same manner as the die 104 made of the Si base 1 described above.
In this case, since the dry etching can be stopped at the SiO ₂ layer 24, the etching depth can be made uniform. However, due to the above-described microloading effect, the silicon layer 22 has the recess 111. An undercut portion called a notch portion (groove) 112 may be formed along the intermediate SiO ₂ layer 24 on the outer periphery (of the wall surface) on the bottom surface side of the reverse tapered wall surface.
That is, at the time of hot embossing (at the time of imprinting), when molding is performed using such a mold (mold body) 113 based on the SOI base material 21, the same as the above-described mold (mold body) 104 based on the Si base material 1, The reverse tapered shape in the recessed portion 111 and the addition of the notch portion 112 described above makes the undercut state as described above impossible, so that a resin molded product (product) having a fine pattern can be obtained. It cannot be released efficiently.
Therefore, similarly to the mold (mold body) 104 made of the Si base material 1 described above, there is an adverse effect that the product (resin molded product) cannot be efficiently released.
In addition, since the product (resin molded product) cannot be released efficiently as in the case of the mold (molded body) 104 using the Si base material 1 described above, a highly reliable and high quality product can be obtained efficiently. There is a harmful effect that it is not possible.
Further, referring to the resin molded product (product) having the convex portion having the high aspect ratio as described above, as described above, similarly to the mold (mold body) 104 obtained by processing the Si base material 1 as described above. The height of the convex portions of the fine structure having a high aspect ratio cannot be made uniform efficiently.

  In the silicon substrate 1 or the SOI substrate 21 described above, the wall surface of the recess (111) formed by dry etching can be experimentally processed into a vertical shape or a forward tapered shape. This processing is very difficult, and when the forward taper-shaped concave portion 111 is processed and formed, the angle of the forward taper shape on the wall surface of the concave portion becomes almost vertical, and the mold for hot embossing (transfer As the taper angle as a mold) is very small, it is not practical.

In addition to the hot embossing mold (mold body) 104 described above, a resin molding mold (injection molding, transfer molding, compression molding) in which a split mold (mold body) having a fine pattern is assembled as a cavity block. Etc.) are used (see FIGS. 7A and 7B).
That is, by injecting and filling a resin melted by heating into a mold cavity in the resin mold described above, a resin molded product corresponding to the shape of the mold cavity and having a fine pattern (for example, a light guide plate, A plastic optical component such as a diffraction grating) is being molded.
However, like the hot embossing mold (mold) 104 described above, there is an adverse effect that the product (resin molded product) cannot be released efficiently, and a product with high reliability and high quality can be obtained. There is an adverse effect that it cannot be obtained efficiently, and there is an adverse effect that the productivity of the product cannot be improved efficiently.

Accordingly, an object of the present invention is to provide a mold processing method and a mold that can efficiently release a product.
Another object of the present invention is to provide a method for processing a mold body that can efficiently align the depths of the recesses formed in the mold body, and the mold body.
Another object of the present invention is to provide a mold processing method and a mold that can efficiently obtain a highly reliable and high quality product.
It is another object of the present invention to provide a mold processing method and its mold that can improve the productivity of products efficiently.

The method for processing a mold according to the present invention for solving the technical problem described above includes a step of using an SOI substrate in which an intermediate silicon dioxide layer is sandwiched between a silicon substrate and a substrate to be etched. by dry etching the surface of the wood, forming a recess having a wall surface of the reverse tapered and provided with an opening having a desired fine pattern on the etching-treated surface of the etched substrate described above, the object The step of stopping the etching depth of the reverse tapered recess in the intermediate silicon dioxide layer during the dry etching process of the etching substrate, and the reverse tapered recess as described above during the dry etching process of the substrate to be etched. forming a notch on the bottom side of the, by joining the base to the etched surface described above, and the The step of closing the opening on the side of the etching process surface, and removing the unnecessary base material portion on the non-etching surface of the base material to be etched as described above, the requirement corresponding to the above-mentioned recess on the non-etching surface. By performing the step of causing the opening having the fine pattern of the above, the step of closing the opening on the etching treatment surface, and the step of appearance of the opening on the non-etching treatment surface sequentially or in reverse, And a step of forming a mold body having a recess having a finely patterned opening on the non-etched surface and having a forward tapered wall surface.

  According to the present invention, it is possible to provide an excellent effect that it is possible to provide a method for processing a mold capable of efficiently releasing a product and the mold.

  Moreover, according to this invention, there exists an outstanding effect that the processing method of the type | mold body which can arrange | equalize the depth of the recessed part formed in a type | mold body efficiently, and its type | mold body can be provided.

  In addition, according to the present invention, there is an excellent effect that it is possible to provide a mold processing method and a mold that can efficiently obtain a highly reliable and high quality product.

  Moreover, according to this invention, there exists an outstanding effect that the processing method of the mold body which can improve the productivity of a product efficiently, and its mold body can be provided.

  In addition, according to the present invention, in particular, in a product including a convex portion that forms a fine pattern having a high aspect ratio (for example, an aspect ratio of 10 or more), a mold body that can efficiently release the product. There is an excellent effect that it is possible to provide a processing method of a mold and its mold, which can obtain the same effects as those described above, such as a processing method and a mold thereof. .

Hereinafter, the method for processing a mold according to the present invention will be described by taking the processing of a hot embossing mold (mold) as an example.
That is, first, dry etching is performed on a silicon substrate (substrate to be etched) by deep-RIE (reactive ion etching).
At this time, the etched surface of the silicon base material (Si base material) includes an opening having a required fine shape pattern (fine pattern) and a wall surface (side wall surface) having a reverse taper shape (cross-sectional shape). Recesses are formed (dry etching process).
At this time, the etching depth of the concave portion is different due to the microloading effect by the Deep-RIE method.
Next, a silicon base (silicon wafer) is temporarily attached to the etching treatment surface, and heat treatment is performed to perform this attachment (diffusion bonding), and the opening of the etching treatment surface in the Si base is closed. (Opening closing process).
At this time, the sticking surface side (bonding surface side) of the silicon base is a closed surface of the reverse tapered concave portion by the dry etching described above, and the concave portion provided with a forward tapered wall surface according to the present invention described later. It will be the bottom of.
Next, the non-etched surface of the Si substrate (the surface opposite to the etched surface) is ground by, for example, a grinding roller, and an Si substrate unnecessary as a “mold” is formed on the Si substrate. By removing the “part”, the concave portion appears (deposits) to form an opening having a required fine pattern on the non-etched surface side (opening appearance process).
At this time, since the concave portion with the shallowest etching depth can be removed as a reference, the etching depth of the concave portion can be efficiently and uniformly aligned with a required depth.
Further, at this time, the concave portion provided with the reverse tapered wall surface is a concave portion provided with a forward tapered wall surface when viewed from the non-etching surface side (pressing surface side).
Therefore, in the processing of the mold (mold body) according to the present invention, in the appearance process of the opening on the non-etched surface side by grinding described above, the “opening having a fine pattern” is formed on the non-etched surface of the Si substrate. And a mold body provided with a “concave portion having a forward tapered wall surface and a uniform depth” can be formed and processed.
Further, the forward tapered wall surface in the recess of the mold (mold) according to the present invention is the reverse tapered wall surface of the recess by dry etching, and the closed opening of the recess by dry etching is the mold (mold) according to the present invention. It is the bottom face in the recessed part.
Note that the non-etched surface having the forwardly tapered concave portion of the fine pattern is, for example, a pressing surface (hot embossing surface) of a hot embossing die (mold) or a resin molding die (injection molding). , Including transfer molding, compression molding, and the like) is a cavity bottom surface in a mold cavity provided in a cavity block (a mold body serving as a split mold of the mold).

Accordingly, when the hot embossing mold (mold body) according to the present invention is used, for example, when hot embossing is performed on a heat-softened resin plate (molded article), the pressing surface (molding surface) of the mold according to the present invention is resin. After pressing on the plate, cooling and releasing the mold, the fine pattern having the convex portion corresponding to the concave portion is hot-embossed on the pressed surface (molded surface) of the resin plate, and the resin molded product ( Product).
At this time, the softened resin penetrates into the inside of the forward taper-shaped concave portion. However, since the cross-sectional wall surface shape of the concave portion is a forward taper shape, the mold (mold body) is released from the resin plate. At this time, it is possible to efficiently release the solidified resin that becomes the convex portion of the resin molded product from the concave portion.
That is, as described above, according to the present invention, it is possible to provide a method for processing a mold body that can efficiently release a product (resin molded product) and the mold body.
Further, as described above, according to the present invention, it is possible to provide a method for processing a mold body and the mold body that can efficiently and uniformly align the depths of the recesses formed in the mold body.
In addition, according to the present invention, for example, when hot embossing is performed, the mold can be efficiently released without catching the convex portion of the resin molded product (product) corresponding to the concave portion of the hot embossing die. The convex portions of the product are not broken or elongated, and the heights of the convex portions of the resin molded product can be efficiently and uniformly aligned.
Therefore, since the heights of the convex portions of the resin molded product can be efficiently and uniformly aligned, a method of processing a mold body and a mold body capable of efficiently obtaining a highly reliable and high quality product are provided. Can be provided.
Furthermore, when the mold (mold body) is released from the resin plate, the mold can be efficiently released without catching the solidified resin that becomes the convex part of the resin molded product (product) from the concave part. Since the yield of the product can be improved efficiently, it is possible to provide a mold processing method and its mold that can improve the productivity of the product efficiently.
Furthermore, since it is configured as described above, for example, a recess having a fine pattern with a high aspect ratio (for example, an aspect ratio of 10 or more) and a forward tapered wall surface and a uniform depth is provided. The provided mold body can be processed efficiently, and a product with a high aspect ratio can be efficiently released from the hot embossing mold processed in the present invention.
That is, as described above, since the concave portion provided with the opening having a fine pattern can be provided with a forward tapered wall surface and a uniform depth, particularly in the case of a mold body provided with a high aspect ratio concave portion, Compared with a mold having a recess having a low aspect ratio or less (for example, an aspect ratio of less than 10), the effect is remarkable, and the protrusion of a hot-embossed resin molded product (product) is hooked in the recess. It can be efficiently released without any problems.

In addition, instead of the above-described Si base material, an SOI base material configured by sandwiching a silicon dioxide layer (SiO ₂ layer) between two silicon layers was used, and dry etching was performed on the above-described SOI base material. By stopping at the intermediate SiO ₂ layer, the etching depth of these recesses can be efficiently and uniformly aligned to the required depth.
When dry etching is performed on the above-described SOI base material, a notch portion (along the SiO ₂ layer) may be formed on the bottom surface portion of the recess formed by the above-described dry etching.
In this case, when hot embossing is performed by pressing with the mold according to the present invention, the reinforcing resin portion can be formed on the base end side of the convex portion of the resin molded product corresponding to the notch portion described above.
Accordingly, the strength of the product (convex portion) hot embossed by the above-described reinforcing resin portion can be improved efficiently.
Further, in each of the above-described embodiments (Si base material, SOI base material), the above-described opening closing process and the above-described opening appearance process may be performed in reverse order instead of this order.
That is, after the above-described dry etching process, first, the above-described opening appearance process may be performed, and then the above-described opening closing process may be performed.
Even in this case, the same effect as the configuration in which the opening closing process and the opening opening process are sequentially performed can be obtained.

  In each of the above-described embodiments, a hot embossing die (mold) and a method for processing the die have been described. For example, a resin molding die (including injection molding, transfer molding, compression molding, etc.) It is also possible to employ a cavity block (mold body) for forming a resin molding cavity, or a mold (mold body) for optical imprinting and casting.

Hereinafter, based on an example figure, Example 1 concerning the present invention is described in detail.
1 (1), FIG. 1 (2), FIG. 1 (3), and FIG. 1 (4) are explanatory views for explaining each step of the mold processing method according to the first embodiment.
1 (1) shows a dry etching process, FIG. 1 (2) shows a silicon base attaching process (opening closing process), and FIG. 1 (3) shows a non-etched surface removal process ( 1 (4) shows a mold body forming process (mold body according to the present invention).

(For dry etching on silicon substrate)
That is, although not shown, first, a silicon substrate 1 (substrate to be etched) is coated with a resist film and exposed to expose a silicon substrate (hereinafter referred to as Si substrate) to be etched ( A resist film having a required fine pattern (fine pattern) is formed on the first etching surface.
Next, as shown in FIG. 1A, dry etching (indicated by an arrow 2) is performed on the Si substrate 1 by a Deep-RIE method (reactive ion etching) which is a kind of dry etching.
At this time, a recess 5 having an opening 4 having a required fine shape pattern (fine pattern) and a wall surface (side wall surface) having an inversely tapered shape (cross-sectional shape) is formed on the etching processing surface 3. It will be.
At this time, due to the above-described microloading effect, the etching rate is higher when the fine pattern is coarse, and the etching rate is slower when the fine pattern is dense. Cannot be made evenly and efficiently, and the recesses 5 are formed with different depths (an example of the etching depth is indicated by reference numeral 17 in FIG. 1 (1)).
In addition, to explain supplementarily, when hot embossing is performed in this state, since the cross-sectional shape of the recess 5 is an inversely tapered shape, the opening 4 is narrower than the bottom surface, and the resin inside the recess 5 (The convex part formed in the resin molded product) is caught in an undercut state.

  Next, the Si base 1 provided with the etching processing surface 3 having the opening 4 is subjected to acid / alkali cleaning to activate the etching processing surface 3.

Next, as shown in FIG. 1B, a silicon base 6 (for example, a silicon wafer) is affixed (bonded) to the etching surface 3 of the Si base 1 by heat treatment. By performing the sticking (joining) step, the opening 4 of the etching processing surface 3 is closed.
For example, the silicon base 6 is attached to the etching surface 3 of the Si base 1 by temporarily heat-treating the silicon base 6 at a temperature of 100 degrees C. for several minutes. By applying heat treatment for several hours at C, this bonding can be performed (diffusion bonding).

Next, as shown in FIG. 1 (3), the non-etched surface 7 opposite to the etched surface 3 of the Si base material 1 is ground by a grinding roller 8 to obtain a “mold (mold)”. Is removed (until the position of the two-dot chain line shown in FIG. 1 (3)), and an opening 10 having a fine pattern of the required shape appears (the fine pattern of the required shape is To precipitate).
At this time, grinding is performed on the basis of the recess 5 having the shallowest etching depth (B), that is, until the opening 11 of the recess having the shallowest etching depth appears.
Therefore, it is possible to form the recess 11 having the opening 10 having the fine pattern of the required shape on the non-etching processing surface 7 side (pressing surface 12) and having the forward tapered wall surface and the uniform depth.
That is, as shown in FIG. 1 (4), according to the first embodiment, the concave portion 11 having the opening 10 having the required fine pattern and having the forward tapered wall surface and the uniform depth is provided. A hot embossing mold (mold body) 13 provided with the pressing surface 12 can be formed (mold body forming step).
Further, as shown in FIG. 1 (4), according to Example 1, the depth of the concave portion having the fine pattern having the required shape is uniformly equal to the depth B of the concave portion (5.11) having the shallowest etching depth. It will be aligned.
Further, the forward tapered wall surface in the recess 11 of the mold (mold) 13 according to the present invention is the reverse tapered wall surface of the recess 5 by dry etching, and the closed opening 4 of the recess 5 by dry etching is in accordance with the present invention. This is the bottom surface of the concave portion 11 of the mold (mold body) 13.

  The aspect ratio will be described with reference to FIG. 1 (4). Aspect ratio = [(vertical depth B of recess 11) / (horizontal width A of opening 10)].

Next, a configuration for pressing the above-described hot embossing die (mold) 41 (13) will be described with reference to FIGS. 6 (1), 6 (2), and 6 (3).
Note that, as described above, the hot embossing die 41 (13) has a recess having an opening 50 (10) having a fine pattern of a required shape, a forward tapered wall surface, and a uniform depth B. 45 (11) is provided, and A indicates the width of the opening 50.

That is, as shown in FIG. 6A, first, a resin plate 43 (molded product) is disposed on the base 42, and the above-described mold (mold body) 41 is placed above the resin plate 43 with its pressing surface. 44 (12.15) side is arranged facing downward.
Next, as shown in FIG. 6 (2), first, the resin plate 43 is heated and softened, and the hot embossing mold (mold) 41 is moved down to move the mold (mold). ) By pressing the pressing surface 44 side of 41 against the softened resin plate 42, a convex portion 46 corresponding to the concave portion 45 (11) of the mold (mold body) 41 is formed on the resin plate 42 and cooled. Then, by moving the hot embossing mold (mold body) 41 upward and releasing the mold, a resin molded product (product) 47 having the convex portions 46 having the fine pattern described above is formed.
Therefore, as shown in FIG. 6 (3), a convex portion 46 having a fine pattern corresponding to the concave portion 45 having the fine pattern formed on the mold 41 is transferred and formed on the resin molded product 47. In addition, the convex portion 46 of the resin molded product 47 is transferred and formed at a uniform height corresponding to the uniform depth of the concave portion 45 (hot embossing).
In the above-described mold 41, reference numeral 48 denotes a silicon substrate, and 49 denotes a silicon base.

That is, according to the first embodiment, since the concave portion 45 provided in the mold 41 is formed in a forward tapered shape, the convex portion 46 formed corresponding to the concave portion 45 is caught in the concave portion 45 described above. Since it can prevent efficiently, the resin molded product (product) 47 can be released efficiently.
Further, according to the first embodiment, as described above, the depths of the concave portions 45 provided in the mold 41 can be efficiently and uniformly formed.
Therefore, according to the first embodiment, as described above, it is possible to provide the processing method of the mold (mold body) 41 and the mold (mold body) 41 that can release the product 47 efficiently.
Moreover, according to Example 1, the processing method of the type | mold (mold body) which can align the depth of the recessed part 45 formed in the mold | type (mold body) 41 efficiently, and its type | mold (mold body) 41 are provided. be able to.
Further, according to the first embodiment, the depths of the recesses 45 formed in the mold (mold body) 41 can be efficiently and uniformly aligned, so that a highly reliable and high quality product can be efficiently obtained. The processing method of the type | mold (mold body) 41 which can be performed, and the type | mold (mold body) 41 can be provided.
Furthermore, according to the first embodiment, as described above, when the mold (mold body) is released from the resin plate, the solidified resin that becomes the convex portion of the resin molded product (product) is hooked from the concave portion. Therefore, the yield of the product can be improved efficiently, so that the processing method of the mold (mold) 41 that can improve the productivity of the product efficiently and its mold ( Mold) 41 can be provided.
In particular, since the concave portion 45 provided in the mold (mold body) 41 is formed in a forward taper shape and the resin molded product (product) 47 can be efficiently released, a high aspect ratio (for example, an aspect ratio of 10 The resin molded product 47 having the convex portions 46 as described above can be formed by hot embossing efficiently.
That is, as described above, according to the first embodiment, the concave portion 45 including the opening 10 having the fine pattern can be provided with the forward tapered wall surface and the uniform depth. In the case of the mold (mold body) 13 provided with the recess 11, the effect is remarkable as compared with the mold (mold body) provided with the recess having a low aspect ratio or less (for example, less than 10 aspect ratio).
Therefore, in particular, in the case of a mold (mold body) 13 provided with a recess 11 having a high aspect ratio, a resin molded product (product) that is hot embossed compared to a mold (mold body) provided with a recess having a low aspect ratio or less. The protrusion (46) can be efficiently released without being caught in the recess 11.

Next, Example 2 according to the present invention will be described in detail.
2 (1), FIG. 2 (2), FIG. 2 (3), and FIG. 2 (4) are explanatory views for explaining each step of the mold processing method according to the second embodiment.
2 (1) shows a dry etching process, FIG. 2 (2) shows a silicon base sticking process (opening closing process), and FIG. 2 (3) shows a non-etched surface removal process ( FIG. 2 (4) shows a mold forming process (mold according to the present invention).

(For dry etching on SOI substrate)
That is, Example 2 has a configuration in which an SOI (Silicon on Insulator) base material 21 is used as a base material to be etched, and as shown in FIG. A single crystal silicon layer (Si layer), that is, a silicon dioxide layer (SiO ₂ layer) 24 sandwiched between the first silicon layer 22 and the second silicon layer 23 as an intermediate layer (etching stop layer). .
Therefore, the second embodiment is configured so that dry etching can be efficiently stopped by this intermediate SiO ₂ layer.

That is, in the second embodiment, as in the first embodiment, although not shown, first, a resist film is applied to the SOI base material 21 (substrate to be etched) and exposed to expose the SOI base material 21. A resist film having a required fine shape pattern (fine pattern) is formed on the etching processing surface 25.
Next, as shown in FIG. 2A, dry etching is performed on the etching processing surface 25 (first Si layer 22) of the SOI base material 21 by the Deep-RIE method (arrow 26).
At this time, the etching processing surface 25 of the first Si layer 22 in the SOI substrate 21 is provided with an opening 27 having a required fine shape pattern (fine pattern), and has a reverse tapered wall surface and a uniform etching depth 28. The recessed part 29 provided with these will be formed.
The reason why the etching depths 28 can be made uniform efficiently is that the second embodiment is configured to efficiently prevent the microloading effect unlike the first embodiment. is there.
That is, since dry etching is performed on the SOI base material 21 having the intermediate SiO ₂ layer 24 described above, the dry etching action can be effectively stopped at the SiO ₂ layer 24, so that the wall surface of the recessed portion 29 to be etched is Can be efficiently formed in a reverse taper shape, the etching depth 28 of the recess 29 can be uniformly and efficiently aligned, and the bottom surface of the recess 29 is formed by the surface of the SiO ₂ layer 24. It will be.
Next, acid / alkaline cleaning is performed on the SOI substrate 21 provided with the etching processing surface 25 having the opening 27 to activate the etching processing surface 25.

  Next, as shown in FIG. 2B, a silicon base 30 (for example, a silicon wafer) is bonded to the etching surface 25 of the SOI base material 21 by heat treatment, as in the first embodiment (bonding). The opening 27 of the etching processing surface 25 is closed (diffusion bonding) by performing the step of bonding (bonding) the silicon base 30.

Next, as shown in FIG. 2 (3), as in the first embodiment, the non-etching surface 31 side opposite to the etching surface 25 of the SOI base material 21, that is, the second Si layer is formed. 23 and the SiO ₂ layer 24 are ground by the grinding roller 8 to remove the “base portion unnecessary as a mold”, thereby providing a fine pattern of a required shape on the non-etched surface 31 side. An opening 32 appears.
That is, as shown in FIG. 2 (4), according to the second embodiment, this dry etching action can be stopped at the intermediate SiO ₂ layer 24 during the above-described dry etching process. Since the depths 28 can be efficiently and uniformly aligned, the non-etched surface 31 (grinding surface) has openings 32 having a fine pattern of a required shape, and has a forward tapered wall surface and a uniform depth. A recess 33 can be formed.
Therefore, according to the second embodiment, as shown in FIG. 2 (4), the concave portion 33 having the opening 32 having the fine pattern of the required shape and having the forward tapered wall surface and the uniform depth is provided. A hot embossing mold (mold body) 35 provided with the pressing surface 34 can be formed (mold body forming step).
In FIG. 2 (4), A is the horizontal width of the opening 33, B is the vertical depth B (28) of the recess 33, and the aspect ratio = (B / A).

In the second embodiment, as in the first embodiment, as shown in FIGS. 6 (1), 6 (2), and 6 (3), the hot embossing die 41 (35) according to the second embodiment is used. The resin plate 43 can be pressed.
Further, the hot embossing die 41 is provided with a recess 45 (33) having an opening 50 (32) having a fine pattern and having a forward tapered wall surface and a uniform depth B. Has been.
Therefore, according to the second embodiment, since the concave portion 45 (33) provided in the mold 41 in the second embodiment is formed in a forward tapered shape, the resin molded product (product) 47 can be efficiently released.
Further, according to the second embodiment, the depths in the recesses 45 provided in the mold 41 can be efficiently and uniformly formed.
Therefore, according to the second embodiment, it is possible to provide a processing method and a mold (mold) of the mold 41 (mold) that can efficiently release the product 47.
Further, according to the second embodiment, there is provided a mold (mold) processing method and its mold (mold) 41 capable of efficiently aligning the depths of the recesses 45 formed in the mold (mold) 41. be able to.
Further, according to the second embodiment, the depths of the concave portions 45 formed in the mold (mold body) 41 can be efficiently and uniformly aligned, so that a highly reliable and high quality product can be efficiently obtained. The processing method of the type | mold (mold body) 41 which can be performed, and the type | mold (mold body) 41 can be provided.
Furthermore, according to the second embodiment, as described above, when the mold (mold body) is released from the resin plate, the solidified resin that becomes the convex portion of the resin molded product (product) is hooked from the concave portion. Therefore, the yield of the product can be improved efficiently, so that the processing method of the mold (mold) 41 that can improve the productivity of the product efficiently and its mold ( Mold) 41 can be provided.
Further, in particular, since the concave portion provided in the mold (mold body) is formed in a forward taper shape and the resin molded product (product) 47 can be efficiently released, the high aspect ratio is the same as in the first embodiment. A resin molded product having convex portions (46) (for example, an aspect ratio of 10 or more) can be efficiently hot embossed.
Further, according to the second embodiment, as in the first embodiment, the forward tapered wall surface in the concave portion 33 of the mold 35 according to the present invention is the reverse tapered wall surface of the concave portion 27 by dry etching. The closing opening 27 of the recess 29 by etching is the bottom surface of the recess 33 of the mold 35 according to the present invention.

Next, Example 3 according to the present invention will be described in detail.
3 (1), FIG. 3 (2), FIG. 3 (3), and FIG. 3 (4) are explanatory views for explaining each step of the mold processing method according to the third embodiment.
3 (1) shows a dry etching process, FIG. 3 (2) shows a silicon base attaching process (opening closing process), and FIG. 3 (3) shows a non-etched surface removal process ( FIG. 3 (4) shows a mold forming process (mold according to the present invention).

(When forming a notch by dry etching on an SOI substrate)
Since Example 3 has a configuration in which an SOI substrate is used as the substrate to be etched, as in Example 2, the same reference numerals are given to the same components as those in Example 2.
In the third embodiment, a notch portion 36 is formed on the outer periphery on the bottom surface side of the recess 29 formed by stopping the dry etching 26 in the SiO ₂ intermediate layer 24 of the SOI substrate 21.

That is, in the third embodiment, as in the first or second embodiment, first, a resist film is applied to the SOI substrate 21 (substrate to be etched) and exposed to expose the SOI substrate 21. A resist film having a required fine shape pattern (fine pattern) is formed on the surface 25.
Next, as shown in FIG. 3A, as in the first or second embodiment, dry etching is performed on the etching treatment surface 25 of the SOI base material 21 (first Si layer 22) by the Deep-RIE method. .
At this time, similarly to the second embodiment, the etching processing surface 25 is provided with an opening 27 having a required fine shape pattern (fine pattern), and a concave portion 29 having a reverse tapered wall surface and a uniform etching depth 28. Can be formed.
At this time, the dry etching operation (26) described above can be stopped at the intermediate SiO ₂ layer 24 as in the _second embodiment, so that the etching depth 28 of the concave portion 29 is formed to be uniform. Can do.
Further, at this time, as shown in FIG. 3 (1), the outer periphery on the bottom surface side of the reverse tapered recess 29 described above, that is, the outer periphery on the bottom surface side of the wall surface in the reverse tapered recess 29 described above. Therefore, a notch portion 36 is provided on the first Si layer 22 side at the boundary between the first Si layer 22 and the intermediate SiO ₂ layer 24.
The notch portion 36 is formed by excessively performing dry etching 26 as compared with the second embodiment. The notch portion 36 is formed by dry etching along the intermediate SiO ₂ layer 24 from the concave portion 29 in the outer peripheral direction. It is formed by erosion.
Next, in the same manner as in Example 2, acid / alkali cleaning is performed on the SOI base material 21 provided with the etching treatment surface 25 having the opening 29 to activate the etching treatment surface 25.

  Next, in Example 3, as in Example 2, as shown in FIG. 3B, a silicon base 30 (for example, a silicon wafer) is heat-treated on the etching processing surface 25 of the SOI base material 21. The opening 29 of the etched surface is closed (diffusion bonding) by performing the step of bonding (bonding) the silicon base 30 to be bonded (bonded).

Next, as shown in FIG. 3 (3), in Example 3, as in Example 1, the non-etching surface 31 side (second surface) that is the surface opposite to the etching surface 25 of the SOI base material 21 (second surface). By opening the Si layer 23 and the SiO ₂ layer 24) with the grinding roller 8 to remove the “SOI base portion unnecessary for the mold”, the opening 33 having a fine pattern of a required shape is obtained. To appear.
That is, an opening 33 having a fine pattern of a required shape is provided on the non-etching surface 31 side of the SOI base material 21 which becomes the pressing surface 37 of the die 38, and a forward tapered wall surface (side wall surface) and a uniform depth. The notch portion 36 can be formed on the outer surface of the opening portion 33 of the pressing surface 37, and the notch portion 36 is located on the pressing surface 37 side (the notch portion 36 described above). Corresponding to the opening).
The notch 36 corresponds to the reinforcing resin portion 52 for reinforcing the convex portion formed on the base end side of the convex portion in the hot-embossed resin plate.
Therefore, as shown in FIG. 3 (4), according to the third embodiment, as in the case of the SOI substrate 21 shown in the second embodiment, an opening 32 having a fine pattern of a required shape is provided and a forward tapered shape is formed. A hot embossing die (mold) 38 having a pressing surface 37 provided with a recess 33 having a wall surface, a uniform depth, and a notch 36 provided on the outer periphery of the opening 32 can be formed. (Process for forming a mold having a notch).

Further, in Example 3, as in the case of the SOI substrate shown in Example 2, as shown in FIGS. 6 (1), 6 (2), and 6 (3), hot embossing according to Example 3 is used. The mold (mold) 41 (38) can be pressed against the resin plate 43.
Therefore, according to the third embodiment, since the recess 45 (33) provided in the mold (mold body) 41 (38) in the third embodiment is formed in a forward taper shape, the resin molded product (product) 47 is separated efficiently. Can be typed.
Moreover, according to Example 3, the depth in the recessed part 45 provided in the above-mentioned type | mold (type | mold body) 41 can be formed uniformly and efficiently.
Therefore, according to Example 3, the processing method and type | mold of the type | mold (mold body) 41 which can release the product 47 efficiently can be provided.
Further, according to the third embodiment, there is provided a mold (mold) processing method and its mold (mold) 41 capable of efficiently aligning the depths of the recesses 45 formed in the mold (mold) 41. be able to.
Further, according to the third embodiment, the depths of the recesses 45 formed in the mold (mold body) 41 can be efficiently and uniformly aligned, so that a highly reliable and high quality product can be efficiently obtained. The processing method of the type | mold (mold body) 41 which can be performed, and the type | mold (mold body) 41 can be provided.
Further, according to the third embodiment, as described above, when the mold (mold body) is released from the resin plate, the solidified resin that becomes the convex portion of the resin molded product (product) is hooked from the concave portion. Therefore, the yield of the product can be improved efficiently, so that the processing method of the mold (mold) 41 that can improve the productivity of the product efficiently and its mold ( Mold) 41 can be provided.
According to the third embodiment, in the resin molded product 47 formed by pressing the hot embossing die 41, the notch 51 (described above) is formed on the outer periphery on the base end side of the convex portion 46 of the resin molded product 47. 36), the reinforcing resin portion 52 for reinforcing the convex portion can be formed, so that the convex portion 46 in the resin molded product 47 described above (for example, against the breakage or elongation of the convex portion as described above). It can be reinforced efficiently.
Further, according to the third embodiment, as in each of the embodiments described above, the forward tapered wall surface in the concave portion 33 of the mold (mold body) 38 according to the present invention is the reverse tapered wall surface of the concave portion 29 by dry etching, The closed opening of the recess 29 by dry etching is the bottom surface of the recess of the mold 38 according to the present invention.

Further, according to the third embodiment, the resin molded product (product) 47 can be efficiently released by forming the recess 45 (33) provided in the mold (mold body) 41 (38) in a forward tapered shape. Therefore, as in the above-described embodiments, the resin molded product 47 having the convex portions 46 having a high aspect ratio (for example, an aspect ratio of 10 or more) can be efficiently hot embossed.
Further, in the case of a mold (mold body) provided with a recess 33 having a high aspect ratio, the reinforced resin part described above as compared with a mold (mold body) provided with a recess having a low aspect ratio or less (for example, an aspect ratio of less than 10). 52 (notch portion 36) has a remarkable effect of reinforcing the convex portion, and in particular, it has been described that the convex portion (46) of the hot-embossed resin molded product (product) is broken at the base end side. Since it can prevent efficiently by reinforcing with the reinforcement resin part 52, the said convex part can be released from the said recessed part 33 efficiently.

Next, a fourth embodiment according to the present invention will be described in detail.
4 (1), FIG. 4 (2), FIG. 4 (3), and FIG. 4 (4) are explanatory views for explaining each process of the mold processing method according to the fourth embodiment.
4 (1) shows a dry etching process, FIG. 4 (2) shows a non-etched surface side removing process (through hole forming process), and FIG. 4 (3) shows a silicon base attaching process ( 4 (4) shows a mold body forming process (a mold body according to the present invention).

(When forming a through hole in a silicon substrate)
That is, since Example 4 has a configuration in which a silicon substrate 1 (Si substrate) is used as a substrate to be etched, as in Example 1, the same components as those in Example 1 are denoted by the same reference numerals.
In addition, Example 4 is different from Examples 1 to 3 in the process order. First, the non-etched surface 7 side of the Si base material 1 is ground to form the opening 10 to form the through hole 14. Next, the silicon base 6 is attached to the etching processing surface 3.

That is, in the fourth embodiment, as in the first embodiment, although not shown, first, the resist film is applied to the silicon base material 1 (Si base material) and exposed to expose the Si base material 1. A resist film having a required fine shape pattern (fine pattern) is formed on the processing surface 3.
Next, as shown in FIG. 4A, the Si base material 1 is provided with an opening 4 having a required fine shape pattern (fine pattern) by dry etching (2) by the Deep-RIE method, and A recess 5 having an inversely tapered wall surface is formed.

Next, as shown in FIG. 4 (2), in Example 4, similarly to Example 1, the non-etched surface 7 side of the Si base material 1 was ground with a grinding roller 8 to obtain a “mold (mold). ) Is removed, an opening 10 having a fine pattern of a required shape appears to form a through hole 14.
At this time, in the same manner as in Example 1, the concave portion (5) having the shallowest etching depth is used as a reference, that is, ground and removed until the opening (10) of the concave portion (5) having the shallowest etching depth appears. By doing so, the through hole 14 is formed, and the length (depth) B of the through hole 14 can be efficiently and uniformly aligned.
Next, acid etching is performed on the etched surface 3 of the Si base 1 to activate the etched surface 3.

Next, as shown in FIG. 4 (3), in Example 4, similarly to Example 1, the silicon base 6 is bonded to the etching surface 3 of the Si base 1 by heat treatment. By performing the pasting step, the opening 4 of the etching processing surface 3 is closed.
Therefore, as shown in FIG. 4 (4), in the fourth embodiment, as in the first embodiment, the opening 10 having the required fine pattern is provided, and the forward tapered wall surface and the uniform depth are provided. A hot embossing mold (mold body) 16 having a pressing surface 15 provided with the recess 11 can be formed (mold body forming step).
Further, according to Example 4, as in each of the above-described examples, the forward tapered wall surface in the recess 11 of the mold (mold body) 16 according to the present invention is the reverse tapered wall surface of the recess 5 by dry etching. The closed opening of the recess 5 by dry etching is the bottom surface of the recess 11 of the mold 16 according to the present invention.
Therefore, in Example 4, the same operation effect as each above-mentioned Example can be acquired.

  Further, in Example 4, the silicon substrate 1 has been described as an example, but Example 4 can also be applied to the SOI substrate 21 used in Examples 2 and 3. In the SOI substrate 21, the same effect as that of the fourth embodiment can be obtained.

  The present invention is not limited to the above-described embodiments, and can be arbitrarily changed and selected as needed within a range not departing from the gist of the present invention.

(About removal process)
Next, the above-described removal process will be described with reference to FIGS. 5 (1), 5 (2), and 5 (3).
For example, as in the second embodiment, as shown in FIG. 5 (1) [or FIG. 2 (2)], the recess 5 is provided with an opening 4 having a fine pattern by dry etching and having a reverse tapered wall surface. The silicon base 30 is attached to the etching processing surface 25 of the SOI base material 21 on which the non-etching processing surface 31 is formed, as shown in FIG. 5 (2) [or FIG. 2 (3)]. The second Si layer 23 and the SiO ₂ layer 24 are removed by roughing with the grinding roller 8.
At this time, as described above, the opening portion 32 on the non-etching surface 31 side may appear, but rough processing is performed by the grinding roller 8 to leave the non-etching surface 31 side as a thin layer. 32 may not appear.
For example, when the thin SiO ₂ layer 24 remains as a thin layer, the thin SiO ₂ layer 24 is removed by lapping (fine polishing) the thin SiO ₂ layer 24 with a polishing rotor 39 and finishing. be able to.
In this case, it is possible to efficiently prevent the pattern of the opening 32 having the fine pattern from being destroyed, and the fine pattern of the opening 32 having the fine pattern can be efficiently caused to appear.
In place of the lapping described above, this thin layer (for example, the thin SiO ₂ layer 24) may be dry or wet etched.
Therefore, in this case, it is possible to obtain the same effects as those of the above-described embodiments.

(About other removal processes)
Next, a removal process such as dry etching will be described.
For example, as in Example 1, as shown in FIG. 1 (2), an etching treatment surface of a Si base material having an opening portion having a fine pattern by dry etching and having a concave portion having a reverse tapered wall surface. A silicon base is affixed to a bonded silicon substrate.
Next, by performing dry etching on the second dry etching treatment surface (the same surface as the non-etching treatment surface described above) opposite to the silicon base attachment surface (first dry etching treatment surface) of the pasting silicon base material , “Silicon base part unnecessary as mold (mold)” is removed.
Therefore, by forming a recess having a required fine pattern on the second dry etching surface, which is a non-etched surface, and having a forward tapered wall surface, the fineness of the opening having a fine pattern can be obtained. Since the pattern can appear efficiently, it is possible to obtain the same effects as those of the above-described embodiments (see FIG. 1 (4)).

(Other removal process by wet etching)
Next, another removal process by wet etching will be described.
For example, as in Example 2 (or Example 3), as shown in FIG. 2 (2) [or as shown in FIG. 3 (2)], an opening having a fine pattern is provided by dry etching. In addition, a silicon base is attached to the etching processing surface of the SOI base material in which the concave portion having the reverse tapered wall surface is formed, thereby forming the sticking SOI base material.
Next, the SiO ₂ layer remaining SOI base material is immersed in a wet etching solution bath and wet etched, thereby removing the SiO ₂ layer and allowing the fine pattern of the opening having the fine pattern to efficiently appear. .
Therefore, the same effects as those of the above-described embodiments can be obtained even in this removal by wet etching (see FIG. 2 (4) or FIG. 3 (4)).

Further, the object to be etched substrate in each embodiment described above has been described with the Si substrate as an example, for example, as a silicon-based, Poly-Si, a-Si , WSi x , etc., as the metal system, Al Examples of insulating film systems such as W, Ti, Al—Si, etc. include SiO ₂ , SiN, and SIOG.

In each of the embodiments described above, examples of the reactive ion etching gas corresponding to each material include a chlorine gas system and a fluorine gas system.
That is, examples of the chlorine gas system include BCl ₄ , Cl ₂ , and CCl ₄ , and examples of the fluorine gas system include CF ₄ , SF ₆ , CHF ₃ , and C ₂ F ₆ .

In each of the embodiments described above, in order to improve the mold releasability efficiently, a fluorine-based film or a fluorocarbon-based film is formed on the surface of the mold (the wall surface of the recess, the molding surface, etc.). Etc. may be coated.
Further, in each of the above-described embodiments, in order to improve the mold releasability efficiently, the surface of the mold (the wall surface of the recess, the molding surface, etc.) is smoothed by wet etching such as potassium hydroxide (KOH). May be. In this case, the scallop formed on the wall surface of the recess in the mold can be efficiently removed.

In each of the above-described embodiments, as a cleaning agent that activates the etched surface by performing acid / alkali cleaning on the Si substrate, for example, sulfuric acid hydrogen peroxide solution, ammonia hydrogen peroxide used in the semiconductor manufacturing process Water or the like can be used.
In addition, acetone, isopropyl alcohol, or the like may be used as a cleaning agent, and surface activation may be performed by performing UV irradiation or the like on the etched surface of the Si substrate.
These may be used alone or in combination.

  In each of the embodiments described above, the silicon base attaching step (bonding step) by the heat treatment described above may be a low-temperature bonding step (process) by surface activation.

  Further, in each of the above-described embodiments, a nickel base is formed on a silicon base or SOI base mold (mold body) to form a reversal mold (master), and a nickel (Ni) electrode is formed on the reversal mold. A replica mold (mold body) may be manufactured by casting (or Ni-W electroforming, Ni-Fe electroforming, etc.).

(About resin molds with molds)
Next, an example of the resin molding die 62 provided with the die body 61 (divided die) according to the present invention will be described with reference to FIGS. 7 (1) and 7 (2).
That is, as shown in FIG. 7A, the resin molding die 62 includes an upper die 63 and a lower die 64, and an upper die cavity 65 and an upper die resin passage 66 (gate, runner, etc.). ) And a lower mold substrate supply unit 68 for supplying and setting 67 substrates.
Accordingly, the resin 69 heated and melted through the resin passage 66 can be injected and filled into the resin molding cavity 65.
Further, the bottom surface (molding surface) 70 of the resin molding cavity 65 is configured by assembling the mold body 61 (divided mold) according to the present invention, and the opening 71 having a fine pattern on the cavity bottom surface 70. The recess 61 is formed, and the mold 61 includes, for example, a silicon base 73 and a silicon base 74 provided with the recess 72 having the fine pattern described above.
Therefore, as shown in FIG. 7B, the fine pattern transferred by inverting and transferring the fine pattern on the bottom surface 70 of the upper mold cavity 65 by injecting and filling the resin 69 heated and melted into the mold cavity 65. Molded resin molded products (products), such as optical components such as light guide plates and diffraction gratings, analysis chips such as μ-TAS (Total Analysis System), micro devices such as medical and chemical devices, and micro components can do.

(About other examples using molds)
For example, a resin molded product (product) is formed by photocuring including UV irradiation (photoimprint), or a liquid resin is dropped on a fine pattern surface in a mold having a fine pattern and then solidified to form a resin molded product. (Product) may be formed (casting).

1 (1), FIG. 1 (2), FIG. 1 (3), and FIG. 1 (4) are schematic longitudinal sectional views for explaining the steps in the mold processing method according to the present invention. 2 (1), FIG. 2 (2), FIG. 2 (3), and FIG. 2 (4) are schematic longitudinal sectional views for explaining the steps in the method of processing another mold according to the present invention. FIGS. 3 (1), 3 (2), 3 (3), and 3 (4) are schematic longitudinal cross-sectional views for explaining steps in the processing method for another mold according to the present invention. 4 (1), FIG. 4 (2), FIG. 4 (3), and FIG. 4 (4) are schematic longitudinal sectional views for explaining the steps in the method for processing another mold according to the present invention. 5 (1), FIG. 5 (2), and FIG. 5 (3) are schematic longitudinal cross-sectional views for explaining the steps in the processing method for another mold according to the present invention. 6 (1), FIG. 6 (2), and FIG. 6 (3) are schematic longitudinal sectional views for explaining an example using a mold body (hot embossing mold) according to the present invention. FIG. 7 (1) and FIG. 7 (2) are schematic longitudinal sectional views illustrating an example using a mold body (resin molding die) according to the present invention. FIGS. 8A and 8B are schematic longitudinal sectional views for explaining a conventional mold processing method.

1 Silicon substrate 2 Arrow (Dry etching)
3 Etched surface (first etched surface)
4 Opening (reverse taper shape)
5 Concave (reverse taper shape)
6 Silicon base 7 Non-etched surface 8 Grinding roller 9 Unnecessary base material 10 Opening (forward taper)
11 Concave part (forward taper shape)
12 Press surface 13 Mold (mold)
14 Through-hole 15 Pressing surface 16 Mold (mold)
21 SOI substrate 22 First silicon layer (first Si layer)
23 Second silicon layer (second Si layer)
24 Silicon dioxide layer (SiO ₂ layer)
25 Etching surface 26 Arrow (Dry etching)
27 Opening (reverse taper shape)
28 Etching depth 29 Recess (Reverse taper shape)
30 Silicon base 31 Non-etched surface 32 Opening (forward taper)
33 Concave part (forward taper shape)
34 Pressing surface 35 Type (mold)
36 Notch part 37 Press surface 38 Type (mold)
39 Polishing rotor 41 type (mold)
42 Base 43 Resin plate (molded product)
44 Press surface (molded surface)
45 Concave part 46 Convex part 47 Plastic molded product (product)
48 Silicon base 49 Silicon base 50 Opening 51 Notch 52 Resin reinforcement 61 Type (mold)
62 Mold 63 Upper mold 64 Lower mold 65 Upper mold cavity 66 Resin passage 67 Substrate 68 Substrate supply part 69 Resin 70 Cavity bottom surface 71 Opening 72 Recess 73 Silicon base 74 Silicon base A Width of recess opening B Depth

Claims (1)

A step of using an SOI substrate having an intermediate silicon dioxide layer sandwiched between silicon substrates as the substrate to be etched ;
A process of forming a recess having an opening having a required fine pattern on the etching surface of the substrate to be etched and having a reverse tapered wall surface by performing a dry etching process on the surface of the substrate to be etched. When,
In the dry etching step of the substrate to be etched, the step of stopping the etching depth of the reverse tapered recess in the intermediate silicon dioxide layer,
In the dry etching step of the substrate to be etched, a step of forming a notch portion on the bottom surface side of the reverse tapered concave portion,
A step of closing the opening on the etching processing surface side by bonding a base to the etching processing surface side;
Removing an unnecessary base material portion on the non-etched surface of the substrate to be etched, thereby causing an opening having a required fine pattern corresponding to the concave portion to appear on the non-etched surface;
Opening of the required fine pattern on the non-etched surface is performed by sequentially or reversely performing the process of closing the opening on the etched surface and the appearance of the opening on the non-etched surface. And a step of forming a mold body having a concave portion having a forward tapered wall surface.

Images