JP4951880B2 - Thermoelectric conversion module - Google Patents

Thermoelectric conversion module Download PDF

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JP4951880B2
JP4951880B2 JP2005177970A JP2005177970A JP4951880B2 JP 4951880 B2 JP4951880 B2 JP 4951880B2 JP 2005177970 A JP2005177970 A JP 2005177970A JP 2005177970 A JP2005177970 A JP 2005177970A JP 4951880 B2 JP4951880 B2 JP 4951880B2
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pad
conversion module
thermoelectric conversion
electrode
solder
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JP2006351942A (en
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晃弘 森本
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Aisin Corp
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Aisin Seiki Co Ltd
Aisin Corp
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Description

本発明は、熱電変換モジュールに関するものである。 The present invention relates to a thermoelectric conversion module.

従来、光通信用レーザダイオード（ＬＤ）モジュール等の光デバイスは、光部品（ＬＤ等）の温度を制御するために熱電変換モジュール、気密性を保つためのパッケージ（筐体）、光部品を搭載するためのマウントを有している。パッケージ内には熱電変換モジュールが固定され、その熱電変換モジュールの上面に光部品を搭載したマウントが固定されている。   Conventionally, optical devices such as laser diodes (LD) modules for optical communication are equipped with thermoelectric conversion modules for controlling the temperature of optical components (LD, etc.), packages (housing) for maintaining airtightness, and optical components. It has a mount to do. A thermoelectric conversion module is fixed in the package, and a mount on which an optical component is mounted is fixed on the upper surface of the thermoelectric conversion module.

熱電変換モジュールは、２枚の絶縁基板間に該対向面に沿って配列された複数の熱電素子（Ｐ型熱電素子及びＮ型熱電素子）を、両対向面に形成された電極に半田付けして形成されている。そして、熱電変換モジュールは、パッケージに設けられた給電用端子と接続されている。   The thermoelectric conversion module solders a plurality of thermoelectric elements (P-type thermoelectric elements and N-type thermoelectric elements) arranged along the facing surface between two insulating substrates to electrodes formed on both facing surfaces. Is formed. And the thermoelectric conversion module is connected with the terminal for electric power feeding provided in the package.

近年、熱電変換モジュールと給電用端子との接続は、ワイヤボンディング法によりワイヤをリードとして接続されている（例えば、特許文献１，特許文献２参照）。熱電変換モジュールの下基板にはワイヤボンド対応の電極が形成され、ワイヤはこの電極と給電用端子とを電気的に接続する。
特許第３０８２１７０号公報 特開２００４−２０７７１７号公報 In recent years, a thermoelectric conversion module and a power supply terminal are connected using a wire as a lead by a wire bonding method (see, for example, Patent Document 1 and Patent Document 2). An electrode corresponding to a wire bond is formed on the lower substrate of the thermoelectric conversion module, and the wire electrically connects the electrode and a power supply terminal.
Japanese Patent No. 3082170 JP 2004-207717 A

ところで、熱電変換モジュールでは、熱電素子と電極との半田付け性を改善するために、電極の表面にＡｕメッキなどの処理が施され、該電極と熱電素子との半田のぬれ性が改善されている。このため、熱電素子と電極とを接合する半田の余剰分がワイヤボンディング対応の電極へと広がってしまう。この電極に広がった半田は、ワイヤボンド時にワイヤと電極とが合金を形成することを阻害するため、接合強度が不足したり、接合できないなどの、接合不良を起こすという問題があった。   By the way, in the thermoelectric conversion module, in order to improve the solderability between the thermoelectric element and the electrode, the surface of the electrode is treated with Au plating or the like, and the wettability of the solder between the electrode and the thermoelectric element is improved. Yes. For this reason, the surplus solder for joining the thermoelectric element and the electrode spreads to the electrode for wire bonding. The solder spread on the electrode hinders the formation of an alloy between the wire and the electrode at the time of wire bonding, so that there is a problem in that the bonding strength is insufficient or bonding is not possible.

本発明は、上記問題点を解決するためになされたものであって、その目的は、接合信頼性を向上することができる熱電変換モジュールを提供することにある。 The present invention was made to solve the above problems, its object is to provide a thermoelectric conversion module which can improve the bonding reliability.

上記問題点を解決するために、請求項１に記載の発明は、パッケージ内に搭載され該パッケージに備えられる導電板とボンディングワイヤにて接続される熱電変換モジュールであって、相対向する一対の基板と、前記一対の基板の対向する面にそれぞれ設けられた電極と、前記一対の基板の間に配列され前記電極と半田により接続された複数の熱電素子と、を備え、前記一対の基板の一方の基板は他方の基板より突出した突出部を有し、該突出部は、ワイヤを接続するためのパッドと、該パッドと前記電極とを接続する接続部とを備え、該接続部には前記熱電素子が接続される前記電極から前記パッドに向かう半田の流れを規制する流れ規制部が前記熱電素子と前記パッドとの間に形成され、前記接続部は、前記電極から前記突出部の突出する方向に沿って延設される部分を有し、該部分にはその幅Ｗ１よりも狭い幅Ｗ２の前記流れ規制部としての幅狭部が前記パッド側に連設されている。 In order to solve the above problems, the invention described in claim 1 is a thermoelectric conversion module mounted in a package and connected to a conductive plate provided in the package by a bonding wire, and a pair of opposing ones And a plurality of thermoelectric elements arranged between the pair of substrates and connected by soldering to the electrodes, and a plurality of thermoelectric elements arranged between the pair of substrates. One substrate has a protruding portion protruding from the other substrate, and the protruding portion includes a pad for connecting a wire and a connecting portion for connecting the pad and the electrode. A flow restricting portion for restricting a flow of solder from the electrode to which the thermoelectric element is connected to the pad is formed between the thermoelectric element and the pad, and the connecting portion projects from the electrode to the protruding portion. You Has a portion extending along the direction, the partial width narrow portion as the flow restriction of the narrower width W2 than the width W1 is provided continuously on the pad side.

従って、請求項１に記載の発明によれば、一方の基板が他方の基板より突出した突出部を有すると共に該突出部にパッドを形成したため、他方の基板に遮られることなくワイヤをパッドにボンディングすることができる。そして、電極と熱電素子とを接続する際に電極からパッドに向かって流れる余剰な半田は、規制部により流れが規制されるため、パッド表面に半田が流れ込むのが抑制される。このため、パッドとワイヤとの接合信頼性が向上する。   Therefore, according to the first aspect of the present invention, since one substrate has a protrusion protruding from the other substrate and the pad is formed on the protrusion, the wire is bonded to the pad without being blocked by the other substrate. can do. And since the flow of the excessive solder which flows toward the pad from the electrode when connecting the electrode and the thermoelectric element is restricted by the restricting portion, the solder is prevented from flowing into the pad surface. For this reason, the bonding reliability between the pad and the wire is improved.

請求項２に記載の発明は、請求項１記載の熱電変換モジュールにおいて、前記幅狭部は、前記電極の幅より狭い幅を有する。
従って、請求項２に記載の発明によれば、電極と熱電素子とを接続する際に電極からパッドに向かって流れる余剰な半田は、幅狭部により流れにくくなるため、半田がパッドに流れ込むのを抑制することができる。 According to a second aspect of the invention, the thermoelectric conversion module according to claim 1, wherein the narrow portion is that having a narrower width than a width of the electrode.
Therefore, according to the second aspect of the present invention, when the electrode and the thermoelectric element are connected, the excessive solder flowing from the electrode toward the pad is less likely to flow due to the narrow portion, so that the solder flows into the pad. Can be suppressed.

請求項３に記載の発明は、請求項２記載の熱電変換モジュールにおいて、前記接続部は、前記電極の幅と同じ幅を有しており、前記幅狭部は、前記パッドと前記電極との間に配置されている。
請求項４に記載の発明は、請求項１〜３のいずれか一項に記載の熱電変換モジュールにおいて、前記接続部には、前記一方の基板における前記突出部の突出する方向に延びる辺と隣り合う辺に沿って形成される前記パッドが接続されている。 According to a third aspect of the present invention, in the thermoelectric conversion module according to the second aspect, the connection portion has the same width as the width of the electrode, and the narrow portion is formed between the pad and the electrode. Arranged between.
The invention described in claim 4 is the thermoelectric conversion module according to any one of claims 1 to 3, the front Symbol connecting portion, and a side extending in the protruding direction of the protruding portion in the one substrate The pads formed along adjacent sides are connected .

請求項５に記載の発明は、請求項１〜４のいずれか一項に記載の熱電変換モジュールにおいて、前記突出部の上面に前記パッドを被覆するテープを貼着した。 The invention according to claim 5 is the thermoelectric conversion module according to any one of claims 1 to 4 , wherein a tape that covers the pad is attached to an upper surface of the protrusion.

従って、請求項５に記載の発明によれば、突出部上面に貼着されたテープにより、電極と熱電素子とを接続する際に電極からパッドに向かって流れる余剰な半田がパッド表面に流れ込むのを防ぐことができる。このため、パッドとワイヤとの接合信頼性が向上する。 Therefore, according to the fifth aspect of the present invention, the excessive solder flowing from the electrode toward the pad flows into the pad surface when the electrode and the thermoelectric element are connected by the tape adhered to the upper surface of the protruding portion. Can be prevented. For this reason, the bonding reliability between the pad and the wire is improved.

本発明によれば、接合信頼性を向上することができる熱電変換モジュールを提供することができる。 According to the present invention, it is possible to provide a thermoelectric conversion module which can improve the bonding reliability.

以下、本発明を具体化した一実施形態を図面に従って説明する。
図１（ａ）及び図１（ｂ）に示すように、電子デバイスとしての光デバイス１０は、パッケージ１１とキャップ１２を備えている。パッケージ１１は、所定の板厚を有し長方形板状に形成された底板１３と、該底板１３の上面に立設され四角形筒状に形成された側壁１４とから構成されている。側壁１４の上端は開口しており、該開口は側壁１４の上端に接合されたキャップ１２により閉塞されている。パッケージ１１とキャップ１２とにより囲まれた空間には乾燥窒素ガスが充填されている。 DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, an embodiment of the invention will be described with reference to the drawings.
As shown in FIG. 1A and FIG. 1B, an optical device 10 as an electronic device includes a package 11 and a cap 12. The package 11 includes a bottom plate 13 having a predetermined plate thickness and formed in a rectangular plate shape, and a side wall 14 standing on the top surface of the bottom plate 13 and formed in a rectangular tube shape. The upper end of the side wall 14 is opened, and the opening is closed by a cap 12 joined to the upper end of the side wall 14. A space surrounded by the package 11 and the cap 12 is filled with dry nitrogen gas.

図１（ａ）に示すように、パッケージ１１の長手方向に沿って延び対向する一対の側壁１４ａにはそれぞれ端子板１５が設けられている。端子板１５は側壁１４ａに長手方向に沿って形成され側壁１４ａを貫通する挿通孔（図示せず）に挿通され、挿通孔と端子板１５との隙間はロウ材により封止されている。端子板１５は、複数の導電板１５ａ及び絶縁板１５ｂを交互に並列して構成されている。パッケージ１１外部に突出した各導電板１５ａの上面には、それぞれ端子１６が接合されている。パッケージ１１内部に突出した導電板１５ａのいくつかは、パッケージ１１内部に収容された素子と接続されている。   As shown in FIG. 1A, a terminal plate 15 is provided on each of a pair of side walls 14a extending in the longitudinal direction of the package 11 and facing each other. The terminal plate 15 is formed in the side wall 14a along the longitudinal direction and is inserted into an insertion hole (not shown) penetrating the side wall 14a. The gap between the insertion hole and the terminal plate 15 is sealed with a brazing material. The terminal plate 15 is configured by alternately arranging a plurality of conductive plates 15a and insulating plates 15b. Terminals 16 are joined to the upper surfaces of the respective conductive plates 15a protruding to the outside of the package 11. Some of the conductive plates 15 a protruding inside the package 11 are connected to elements housed inside the package 11.

パッケージ１１内部には素子としての熱電変換モジュール２１が収容されている。図１（ｂ）に示すように、熱電変換モジュール２１は、半田２２により底板１３の上面に接合されている。熱電変換モジュール２１の上面には半田２３により光学素子を搭載するためのマウント２４が接合されている。マウント２４の上面には、光学素子としての半導体レーザ（ＬＤ）２５と、半導体レーザ２５の背面出力光を受光し該光に応じた信号を出力するフォトダイオード（ＰＤ）２６が搭載されている。   A thermoelectric conversion module 21 as an element is accommodated in the package 11. As shown in FIG. 1B, the thermoelectric conversion module 21 is joined to the upper surface of the bottom plate 13 by solder 22. A mount 24 for mounting an optical element is joined to the upper surface of the thermoelectric conversion module 21 by solder 23. Mounted on the top surface of the mount 24 are a semiconductor laser (LD) 25 as an optical element, and a photodiode (PD) 26 that receives the back output light of the semiconductor laser 25 and outputs a signal corresponding to the light.

図１（ａ）に示すように、半導体レーザ２５と導電板１５ａは、ボンディングにより接合されたワイヤ２５ａ，２５ｂを介して電気的に接続されている。半導体レーザ２５には、ワイヤ２５ａ，２５ｂを介して駆動電流が供給され、半導体レーザ２５は駆動電流に従って発振動作し、レーザ光を照射する。図には、一点鎖線にて半導体レーザ２５から出射されるレーザ光の光軸を示す。フォトダイオード２６は、導電板１５ａとボンディングにより接合されたワイヤ２６ａ，２６ｂを介して電気的に接続され、該ワイヤ２６ａ，２６ｂを介して信号を出力する。レーザ光が出射される側の側壁部１４ｂにはファイバホルダ２７が固着され、該ファイバホルダ２７には光ファイバ２８が固定されている。半導体レーザ２５から出射されたレーザ光は、図示しないレンズを介して光ファイバ２８に導入される。   As shown in FIG. 1A, the semiconductor laser 25 and the conductive plate 15a are electrically connected through wires 25a and 25b joined by bonding. A driving current is supplied to the semiconductor laser 25 via the wires 25a and 25b. The semiconductor laser 25 oscillates in accordance with the driving current and emits laser light. In the figure, the optical axis of the laser beam emitted from the semiconductor laser 25 is shown by a one-dot chain line. The photodiode 26 is electrically connected via wires 26a and 26b joined to the conductive plate 15a by bonding, and outputs a signal via the wires 26a and 26b. A fiber holder 27 is fixed to the side wall portion 14 b on the side from which the laser light is emitted, and an optical fiber 28 is fixed to the fiber holder 27. Laser light emitted from the semiconductor laser 25 is introduced into the optical fiber 28 through a lens (not shown).

次に、熱電変換モジュール２１について詳述する。
図１（ｂ）に示すように、熱電変換モジュール２１は、上下一対の絶縁基板３１，３２を備えている。上基板３１及び下基板３２は、同じ材質（例えばアルミナ）によりなり、長四角平板状に形成されている。そして、上基板３１の長手方向（図１（ａ）において左右方向）の長さは、下基板３２の長手方向の長さよりも短く形成されており、短手方向（図１（ａ）において上下方向）の長さは、下基板３２の短手方向の長さと同じになっている。上基板３１及び下基板３２は、下基板３２の他端部が、上基板３１の他端部よりも長手方向に突出している。即ち、下基板３２の他端部には、その上方に上基板３１が存在しない部分である突出部３２ａが形成されている。 Next, the thermoelectric conversion module 21 will be described in detail.
As shown in FIG. 1B, the thermoelectric conversion module 21 includes a pair of upper and lower insulating substrates 31 and 32. The upper substrate 31 and the lower substrate 32 are made of the same material (for example, alumina) and are formed in a rectangular plate shape. The length of the upper substrate 31 in the longitudinal direction (left-right direction in FIG. 1A) is shorter than the length of the lower substrate 32 in the longitudinal direction, and the length in the short direction (up and down in FIG. 1A). Direction) is the same as the length of the lower substrate 32 in the short direction. In the upper substrate 31 and the lower substrate 32, the other end portion of the lower substrate 32 protrudes in the longitudinal direction from the other end portion of the upper substrate 31. That is, a protruding portion 32 a that is a portion where the upper substrate 31 does not exist is formed on the other end portion of the lower substrate 32.

上側の絶縁基板（以下、上基板）３１と下側の絶縁基板（以下、下基板）３２には、互いに対向する面に複数の上電極３３及び下電極３４が形成されている。上電極３３と下電極３４との間には複数の熱電素子３５が配置されている。複数の熱電素子３５は、Ｐ型熱電素子とＮ型熱電素子とを含み、上基板３１及び下基板３２の対向面に沿って配列され、Ｐ型熱電素子とＮ型熱電素子が電気的に直列又は並列接続されるように上電極３３及び下電極３４と半田により接合されている。半田には例えばスズ−アンチモン（Sn/Sb ）よりなる半田が用いられている。上電極３３，下電極３４及び熱電素子３５により熱電素子回路が形成され、その回路端部の下電極３４は、突出部３２ａ上に延出されている。   A plurality of upper electrodes 33 and lower electrodes 34 are formed on surfaces facing each other on an upper insulating substrate (hereinafter referred to as an upper substrate) 31 and a lower insulating substrate (hereinafter referred to as a lower substrate) 32. A plurality of thermoelectric elements 35 are disposed between the upper electrode 33 and the lower electrode 34. The plurality of thermoelectric elements 35 include a P-type thermoelectric element and an N-type thermoelectric element, and are arranged along opposing surfaces of the upper substrate 31 and the lower substrate 32, and the P-type thermoelectric element and the N-type thermoelectric element are electrically connected in series. Alternatively, the upper electrode 33 and the lower electrode 34 are joined by solder so as to be connected in parallel. For example, solder made of tin-antimony (Sn / Sb) is used as the solder. A thermoelectric element circuit is formed by the upper electrode 33, the lower electrode 34, and the thermoelectric element 35, and the lower electrode 34 at the end of the circuit extends on the protrusion 32a.

突出部３２ａの上面には、一対のボンディング用パッド３６が形成されている。一対のパッド３６は、突出部３２ａの辺に沿って、突出部３２ａの略中央部から短手方向の辺に向かってそれぞれ延びるように形成されている。一対のパッド３６は、接続部３７により下電極３４と電気的に接続されている。   A pair of bonding pads 36 is formed on the upper surface of the protrusion 32a. The pair of pads 36 are formed so as to extend from the substantially central portion of the protruding portion 32a toward the shorter side along the side of the protruding portion 32a. The pair of pads 36 are electrically connected to the lower electrode 34 through the connection portion 37.

図２（ａ）に示すように、接続部３７は、下電極３４を延設したように、該下電極３４の幅と同じ幅を有している。そして、接続部３７には、所定位置（例えば下電極３４とパッド３６との間の中間位置）において、規制部として、前記下電極３４の幅よりも狭い幅に形成された幅狭部３７ａを有している。幅狭部３７ａは、接続部３７を矩形状に切り欠くようにして形成されている。その切り欠き部３７ｂの大きさは、接続部３７の幅、即ち下電極３４の幅に応じて決定されている。図２（ａ）に示すように、切り欠き部３７ｂの幅Ｗ２及び長さＷ３は、接続部３７の幅Ｗ１に応じて設定され、例えば幅Ｗ１の１／２に設定されている。   As shown in FIG. 2A, the connecting portion 37 has the same width as the width of the lower electrode 34 as the lower electrode 34 extends. The connecting portion 37 includes a narrow portion 37a formed at a predetermined position (for example, an intermediate position between the lower electrode 34 and the pad 36) as a restricting portion so as to be narrower than the width of the lower electrode 34. Have. The narrow portion 37a is formed so as to cut out the connecting portion 37 in a rectangular shape. The size of the cutout portion 37 b is determined according to the width of the connection portion 37, that is, the width of the lower electrode 34. As shown in FIG. 2A, the width W2 and the length W3 of the cutout portion 37b are set according to the width W1 of the connection portion 37, for example, set to ½ of the width W1.

図１（ａ）に示すように、パッド３６はワイヤ３８により導電板１５ａと電気的に接続されている。ワイヤ３８は、例えば超音波振動と荷重によりボンディングワイヤを披接合物に接合するウェッジボンディングにより、パッド３６のボンディング領域３６ａ及び導電板１５ａと接合されている。   As shown in FIG. 1A, the pad 36 is electrically connected to the conductive plate 15 a by a wire 38. The wire 38 is bonded to the bonding region 36a of the pad 36 and the conductive plate 15a by, for example, wedge bonding that bonds the bonding wire to the joint by ultrasonic vibration and load.

幅狭部３７ａ及び切り欠き部３７ｂは、下電極３４に熱電素子３５を接合する半田がパッド３６に流れ込むのを阻害する。つまり、幅狭部３７ａの幅は、切り欠き部３７ｂを形成することにより下電極３４の幅よりも狭い。このため、図２（ｂ）に示すように、熱電素子３５の半田付けの際に余剰な半田Ｈが下電極３４からパッド３６に向かって流れるが、幅狭部３７ａにより幅が狭くなっているため、半田Ｈが流れにくくなり、パッド３６に到達しない。従って、パッド３６のボンディング領域３６ａの表面が半田Ｈにより覆われないため、ワイヤボンド時にワイヤ３８とパッド３６とが合金を形成して接合されるとともに、所望の接合強度を得ることができる。   The narrow part 37 a and the notch part 37 b prevent the solder that joins the thermoelectric element 35 to the lower electrode 34 from flowing into the pad 36. That is, the width of the narrow portion 37a is narrower than the width of the lower electrode 34 by forming the cutout portion 37b. For this reason, as shown in FIG. 2B, excessive solder H flows from the lower electrode 34 toward the pad 36 when the thermoelectric element 35 is soldered, but the width is narrowed by the narrow portion 37a. Therefore, the solder H becomes difficult to flow and does not reach the pad 36. Accordingly, since the surface of the bonding region 36a of the pad 36 is not covered with the solder H, the wire 38 and the pad 36 are bonded by forming an alloy at the time of wire bonding, and a desired bonding strength can be obtained.

次に、実施例及び比較例を挙げて前記実施形態をさらに具体的に説明する。
（実施例１）
実施形態にて説明したように、下電極３４とパッド３６との間に幅狭部３７ａを有する接続部３７を形成した。この上基板３１及び下基板３２の電極３３，３４にスズ−アンチモン（Sn/Sb ）半田をスクリーン印刷法により塗布し、上基板３１と下基板３２との間に３６個の熱電素子３５を挟み込み、これらをヒータプレートにて加熱した後、冷却して上記の熱電変換モジュール２１を製作した。 Next, the embodiment will be described more specifically with reference to examples and comparative examples.
Example 1
As described in the embodiment, the connection part 37 having the narrow part 37 a is formed between the lower electrode 34 and the pad 36. Tin-antimony (Sn / Sb) solder is applied to the electrodes 33 and 34 of the upper substrate 31 and the lower substrate 32 by a screen printing method, and 36 thermoelectric elements 35 are sandwiched between the upper substrate 31 and the lower substrate 32. These were heated with a heater plate and then cooled to produce the thermoelectric conversion module 21 described above.

（実施例２）
この熱電変換モジュール４１は、図３（ａ）に示すように、形状が異なる接続部４２を有している。接続部４２は、所定位置（例えば下電極３４とパッド３６との間の中間位置）において、規制部として、前記下電極３４の幅よりも広い幅に形成された幅広部４３を有している。幅広部４３は、下電極３４と同じ幅を有する基部４３ａに矩形状の拡幅部４３ｂを接続して形成されている。その拡幅部４３ｂの大きさは、接続部４２の幅、即ち下電極３４の幅に応じて決定されている。図３（ａ）に示すように、拡幅部４３ｂの幅Ｗ２及び長さＷ３は、接続部４２の幅Ｗ１に応じて設定され、例えば幅Ｗ１の１／２に設定されている。尚、半田の塗布方法、熱電素子３５の数、半田の加熱・冷却は実施例１と同じである。 (Example 2)
As shown in FIG. 3A, the thermoelectric conversion module 41 has a connection portion 42 having a different shape. The connecting portion 42 has a wide portion 43 formed as a restricting portion at a predetermined position (for example, an intermediate position between the lower electrode 34 and the pad 36) wider than the width of the lower electrode 34. . The wide portion 43 is formed by connecting a rectangular wide portion 43 b to a base portion 43 a having the same width as the lower electrode 34. The size of the widened portion 43 b is determined according to the width of the connecting portion 42, that is, the width of the lower electrode 34. As shown in FIG. 3A, the width W2 and the length W3 of the widened portion 43b are set according to the width W1 of the connecting portion 42, for example, set to ½ of the width W1. The solder application method, the number of thermoelectric elements 35, and the solder heating / cooling are the same as in the first embodiment.

この熱電変換モジュール４１の場合、拡幅部４３ｂは、下電極３４に熱電素子３５を接合する半田がパッド３６に流れ込むのを阻害する。つまり、図３（ｂ）に示すように、下電極３４からパッド３６に向かって流れる半田Ｈは、拡幅部４３ｂに流れ込む。即ち、熱電素子３５の半田付けの際に余剰な半田Ｈが拡幅部４３ｂに流れ込み、パッド３６に到達しない。従って、パッド３６のボンディング領域３６ａの表面が半田により覆われないため、ワイヤボンド時にワイヤ３８（図１（ａ）参照）とパッド３６とが合金を形成して接合されるとともに、所望の接合強度を得ることができる。   In the case of this thermoelectric conversion module 41, the widened portion 43 b prevents the solder that joins the thermoelectric element 35 to the lower electrode 34 from flowing into the pad 36. That is, as shown in FIG. 3B, the solder H flowing from the lower electrode 34 toward the pad 36 flows into the widened portion 43b. That is, when the thermoelectric element 35 is soldered, excess solder H flows into the widened portion 43 b and does not reach the pad 36. Accordingly, since the surface of the bonding region 36a of the pad 36 is not covered with solder, the wire 38 (see FIG. 1A) and the pad 36 are bonded together by forming an alloy at the time of wire bonding, and a desired bonding strength. Can be obtained.

（実施例３）
この熱電変換モジュール５１は、図４（ａ）に示すように、下電極３４と同じ幅を有する接続部５２を備えるとともに、該接続部５２を被覆する規制部としてのコーティング剤５３を備えている。コーティング剤５３にはフッ素材料を用い、液状のコーティング剤５３をディスペンサにて所定の位置に供給し、乾燥して形成されている。接続部５２をコーティング剤５３にて被覆した後、熱電素子３５を電極３３，３４に接続した。半田の塗布方法、熱電素子３５の数、半田の加熱・冷却は実施例１と同じである。 (Example 3)
As shown in FIG. 4A, the thermoelectric conversion module 51 includes a connecting portion 52 having the same width as the lower electrode 34 and a coating agent 53 as a regulating portion that covers the connecting portion 52. . The coating agent 53 is made of a fluorine material, and the liquid coating agent 53 is supplied to a predetermined position by a dispenser and dried. After the connection portion 52 was covered with the coating agent 53, the thermoelectric element 35 was connected to the electrodes 33 and 34. The solder application method, the number of thermoelectric elements 35, and the heating / cooling of the solder are the same as in the first embodiment.

この熱電変換モジュール５１の場合、熱電素子３５の半田付けする際の余剰な半田は、コーティング剤５３により遮られ、パッド３６に流れ込まない。従って、パッド３６のボンディング領域３６ａの表面が半田により覆われないため、ワイヤボンド時にワイヤ３８（図１（ａ）参照）とパッド３６とが合金を形成して接合されるとともに、所望の接合強度を得ることができる。   In the case of this thermoelectric conversion module 51, excess solder when soldering the thermoelectric element 35 is blocked by the coating agent 53 and does not flow into the pad 36. Accordingly, since the surface of the bonding region 36a of the pad 36 is not covered with solder, the wire 38 (see FIG. 1A) and the pad 36 are bonded together by forming an alloy at the time of wire bonding, and a desired bonding strength. Can be obtained.

（実施例４）
この熱電変換モジュール６１は、図４（ｂ）に示すように、下電極３４と同じ幅を有する接続部６２を備えるとともに、突出部３２ａ上面にパッド３６及び接続部６２を被覆するマスキングテープ６３が貼着されている。マスキングテープ６３は、例えばポリイミドを基体とした耐熱性を有するテープである。そして、突出部３２ａにマスキングテープ６３を貼着した状態で熱電素子３５を電極３３，３４に接続した。熱電素子３５の接続後、マスキングテープ６３を剥離した。半田の塗布方法、熱電素子３５の数、半田の加熱・冷却は実施例１と同じである。 Example 4
As shown in FIG. 4B, the thermoelectric conversion module 61 includes a connecting portion 62 having the same width as the lower electrode 34, and a masking tape 63 covering the pad 36 and the connecting portion 62 on the upper surface of the protruding portion 32a. It is stuck. The masking tape 63 is a heat-resistant tape using, for example, polyimide as a base. And the thermoelectric element 35 was connected to the electrodes 33 and 34 in the state which affixed the masking tape 63 on the protrusion part 32a. After connecting the thermoelectric element 35, the masking tape 63 was peeled off. The solder application method, the number of thermoelectric elements 35, and the heating / cooling of the solder are the same as in the first embodiment.

この熱電変換モジュール６１の場合、熱電素子３５の半田付けする際の余剰な半田は、マスキングテープ６３により遮られ、パッド３６に流れ込まない。従って、パッド３６のボンディング領域３６ａの表面が半田により覆われないため、ワイヤボンド時にワイヤ３８（図１（ａ）参照）とパッド３６とが合金を形成して接合されるとともに、所望の接合強度を得ることができる。   In the case of this thermoelectric conversion module 61, excess solder when soldering the thermoelectric element 35 is blocked by the masking tape 63 and does not flow into the pad 36. Accordingly, since the surface of the bonding region 36a of the pad 36 is not covered with solder, the wire 38 (see FIG. 1A) and the pad 36 are bonded together by forming an alloy at the time of wire bonding, and a desired bonding strength. Can be obtained.

（比較例１）
この熱電変換モジュール７１は、図５（ａ）に示すように、パッド７２及び接続部７３が下電極３４と同じ幅を有している。半田の塗布方法、熱電素子３５の数、半田の加熱・冷却は実施例１と同じである。 (Comparative Example 1)
In this thermoelectric conversion module 71, as shown in FIG. 5A, the pad 72 and the connection portion 73 have the same width as the lower electrode 34. The solder application method, the number of thermoelectric elements 35, and the heating / cooling of the solder are the same as in the first embodiment.

（比較例２）
この熱電変換モジュール７５は、図５（ｂ）に示すように、接続部７６が下電極３４と同じ幅を有している。半田の塗布方法、熱電素子３５の数、半田の加熱・冷却は実施例１と同じである。 (Comparative Example 2)
As shown in FIG. 5B, the thermoelectric conversion module 75 has a connection portion 76 having the same width as the lower electrode 34. The solder application method, the number of thermoelectric elements 35, and the heating / cooling of the solder are the same as in the first embodiment.

上記した実施例１〜実施例４、及び比較例１，比較例２の熱電変換モジュールのサンプルをそれぞれ１０個用意し、各サンプルに対してパッドへの半田流れの有無を確認した。その結果を表１に示す。   Ten samples of the thermoelectric conversion modules of Examples 1 to 4 and Comparative Examples 1 and 2 described above were prepared, and the presence or absence of solder flow to the pads was confirmed for each sample. The results are shown in Table 1.

Figure 0004951880
表１に示すように、比較例１の熱電変換モジュール７１では９個のサンプルにおいて、パッド３６上への半田の流れが確認され、比較例２の熱電変換モジュール７５では８個のサンプルにおいて、パッド３６上への半田の流れが確認された。これに対し、実施例１〜実施例４の熱電変換モジュール２１，４１，５１，６１では、全てのサンプルにおいてパッド３６上への半田の流れは確認されなかった。
Figure 0004951880
 As shown in Table 1, the flow of solder on the pad 36 was confirmed in nine samples in the thermoelectric conversion module 71 of Comparative Example 1, and the pad of eight samples in the thermoelectric conversion module 75 of Comparative Example 2 was confirmed. The flow of solder onto 36 was confirmed. On the other hand, in the thermoelectric conversion modules 21, 41, 51, and 61 of Examples 1 to 4, no solder flow on the pad 36 was confirmed in all samples.

次に、上記のサンプルのパッドにワイヤをボンディングし、ワイヤの接合可否を確認した。その結果を表２に示す。   Next, a wire was bonded to the pad of the sample, and whether or not the wire could be bonded was confirmed. The results are shown in Table 2.

Figure 0004951880
比較例１及び比較例２の熱電変換モジュール７１，７５のサンプルでは、ワイヤ３８とパッド３６との間に半田が介在するため、ワイヤボンダの超音波振動がパッド３６に伝わりにくく、合金が形成されにくいため、ワイヤの接合が困難であった。これに対し、実施例１〜実施例４の熱電変換モジュール２１，４１，５１，６１では、全てのサンプルにおいてワイヤとパッド３６とが合金を形成し、ワイヤ３８がパッド３６に接合された。このように、実施例１〜実施例４の効果が確認された。
Figure 0004951880
 In the samples of the thermoelectric conversion modules 71 and 75 of the comparative example 1 and the comparative example 2, since solder is interposed between the wire 38 and the pad 36, the ultrasonic vibration of the wire bonder is not easily transmitted to the pad 36, and an alloy is not easily formed. Therefore, it is difficult to join the wires. On the other hand, in the thermoelectric conversion modules 21, 41, 51, 61 of Examples 1 to 4, the wire and the pad 36 formed an alloy in all the samples, and the wire 38 was joined to the pad 36. Thus, the effects of Examples 1 to 4 were confirmed.

以上、本実施形態によれば、以下のような特徴を得ることができる。
（１）下基板３２を上基板３１から突出した突出部３２ａを形成すると共に該突出部３２ａにパッド３６を形成したため、上基板３１に遮られることなくワイヤ３８をパッド３６にボンディングすることができる。そして、電極３３，３４と熱電素子３５とを接続する際に電極３４からパッド３６に向かって流れる余剰な半田Ｈは、幅狭部３７ａにより流れにくくなるため、該半田Ｈがパッド３６に流れ込むのを防ぐことができる。このため、パッド３６とワイヤ３８がボンディング時に合金を形成するため、パッド３６とワイヤ３８との接合信頼性を向上させることができる。 As described above, according to the present embodiment, the following features can be obtained.
(1) Since the protruding portion 32a is formed by protruding the lower substrate 32 from the upper substrate 31, and the pad 36 is formed on the protruding portion 32a, the wire 38 can be bonded to the pad 36 without being blocked by the upper substrate 31. . Then, when the electrodes 33 and 34 and the thermoelectric element 35 are connected, the excessive solder H that flows from the electrode 34 toward the pad 36 is less likely to flow due to the narrow portion 37a, so that the solder H flows into the pad 36. Can be prevented. For this reason, since the pad 36 and the wire 38 form an alloy at the time of bonding, the bonding reliability between the pad 36 and the wire 38 can be improved.

（２）接続部４２に拡幅部４３ｂを形成することにより、電極３３，３４と熱電素子３５とを接続する際に電極３４からパッド３６に向かって流れる余剰な半田Ｈが拡幅部４３ｂに流れ込むため、該半田Ｈがパッド３６に流れ込むのを防ぐことができる。   (2) Since the widened portion 43b is formed in the connecting portion 42, excess solder H flowing from the electrode 34 toward the pad 36 flows into the widened portion 43b when the electrodes 33, 34 and the thermoelectric element 35 are connected. The solder H can be prevented from flowing into the pad 36.

（３）接続部５２をコーティング剤５３により被覆したため、そのコーティング剤５３により電極３３，３４と熱電素子３５とを接続する際に電極３４からパッド３６に向かって流れる余剰な半田Ｈが堰き止められるため、該半田Ｈがパッド３６に流れ込むのを確実に防ぐことができる。   (3) Since the connecting portion 52 is covered with the coating agent 53, when the electrodes 33, 34 and the thermoelectric element 35 are connected by the coating agent 53, excess solder H flowing from the electrode 34 toward the pad 36 is blocked. Therefore, it is possible to reliably prevent the solder H from flowing into the pad 36.

（４）パッド３６を形成した突出部３２ａにマスキングテープ６３を貼着し、該マスキングテープ６３によりパッド３６を被覆するようにした。従って、電極３３，３４と熱電素子３５とを接続する際に電極３４からパッド３６に向かって流れる余剰な半田Ｈが堰き止められるため、該半田Ｈがパッド３６に流れ込むのを確実に防ぐことができる。   (4) A masking tape 63 is attached to the protruding portion 32 a on which the pad 36 is formed, and the pad 36 is covered with the masking tape 63. Therefore, when the electrodes 33 and 34 and the thermoelectric element 35 are connected, excess solder H flowing from the electrode 34 toward the pad 36 is blocked, so that it is possible to reliably prevent the solder H from flowing into the pad 36. it can.

なお、上記各実施形態は以下のように変更してもよい。
・上記実施形態において、電極３３，３４と熱電素子３５を接合する半田として、金−スズ（Au/Sn ）半田，スズ−銀（Ag/Sn ）を含む半田（スズ−銀系半田），スズ−亜鉛（Sn/Zn ）を含む半田（スズ−亜鉛系半田），スズ−鉛（Sn/Pb ）半田を用いても良い。半田の供給方法として、メッキ，ペレットなどを用いても良い。 In addition, you may change each said embodiment as follows.
In the above embodiment, gold-tin (Au / Sn) solder, tin-silver (Ag / Sn) -containing solder (tin-silver based solder), tin as solder for joining the electrodes 33, 34 and the thermoelectric element 35 -Solder containing zinc (Sn / Zn) (tin-zinc based solder) or tin-lead (Sn / Pb) solder may be used. As a solder supply method, plating, pellets, or the like may be used.

・上記実施形態において、切り欠き部３７ｂを形成することにより接続部３７の幅を狭くしたが、接続部３７の幅を狭くすることができればよく、例えば接続部３７の中央に孔を形成するようにしてもよい。   In the above embodiment, the width of the connection portion 37 is reduced by forming the notch portion 37b. However, it is only necessary that the width of the connection portion 37 can be reduced. For example, a hole is formed in the center of the connection portion 37. It may be.

・上記実施形態の実施例１において、切り欠き部３７ｂの幅Ｗ２と長さＷ３を適宜変更して実施しても良い。また、実施例２において、拡幅部４３ｂの幅Ｗ２と長さＷ３を適宜変更して実施しても良い。   -In Example 1 of the said embodiment, you may carry out by changing suitably the width W2 and length W3 of the notch part 37b. In the second embodiment, the width W2 and the length W3 of the widened portion 43b may be changed as appropriate.

・上記実施形態において、マスキングテープ６３を貼着したまま出荷するようにしてもよい。この場合、熱電変換モジュール６１の使用者がマスキングテープ６３を剥離する。この場合、熱電変換モジュール６１が使用されるまでパッド３６のボンディング領域３６ａが被覆されているため、そのボンディング領域３６ａ表面の酸化を防ぐことができる。   -In the said embodiment, you may make it ship with the masking tape 63 stuck. In this case, the user of the thermoelectric conversion module 61 peels off the masking tape 63. In this case, since the bonding region 36a of the pad 36 is covered until the thermoelectric conversion module 61 is used, the surface of the bonding region 36a can be prevented from being oxidized.

（ａ）は光デバイスの平面図、（ｂ）は光デバイスの縦断面図。(A) is a top view of an optical device, (b) is a longitudinal cross-sectional view of an optical device. （ａ），（ｂ）は実施例１を示す一部平面図。(A), (b) is a partial top view which shows Example 1. FIG. （ａ），（ｂ）は実施例２を示す一部平面図。(A), (b) is a partial top view which shows Example 2. FIG. （ａ）は実施例３、（ｂ）は実施例４を示す平面図。(A) is Example 3, (b) is a top view which shows Example 4. FIG. （ａ）は比較例１、（ｂ）は比較例２を示す平面図。(A) is a top view which shows the comparative example 1, (b) shows the comparative example 2. FIG.

符号の説明Explanation of symbols

１１…パッケージ、１５ａ…導電板、３１…基板（上基板）、３２…基板（下基板）、３２ａ…突出部、３３，３４…電極、３５…熱電素子、３６…パッド、３７，４２，５２…接続部、３７ａ…幅狭部（規制部）、３８…ボンディングワイヤ、４３…幅広部（規制部）、４３ｂ…拡幅部（規制部）、５３…コーティング剤（規制部）、６３…マスキングテープ（テープ）、Ｈ…半田。   DESCRIPTION OF SYMBOLS 11 ... Package, 15a ... Conductive plate, 31 ... Substrate (upper substrate), 32 ... Substrate (lower substrate), 32a ... Projection, 33, 34 ... Electrode, 35 ... Thermoelectric element, 36 ... Pad, 37, 42, 52 Connection part 37a Narrow part (regulation part) 38 Bonding wire 43 Wide part (regulation part) 43b Wide part (regulation part) 53 Coating agent (regulation part) 63 Masking tape (Tape), H ... solder.

Claims (5)

パッケージ内に搭載され該パッケージに備えられる導電板とボンディングワイヤにて接続される熱電変換モジュールであって、
相対向する一対の基板と、前記一対の基板の対向する面にそれぞれ設けられた電極と、前記一対の基板の間に配列され前記電極と半田により接続された複数の熱電素子と、を備え、
前記一対の基板の一方の基板は他方の基板より突出した突出部を有し、該突出部は、ワイヤを接続するためのパッドと、該パッドと前記電極とを接続する接続部とを備え、該接続部には前記熱電素子が接続される前記電極から前記パッドに向かう半田の流れを規制する流れ規制部が前記熱電素子と前記パッドとの間に形成され、
前記接続部は、前記電極から前記突出部の突出する方向に沿って延設される部分を有し、該部分にはその幅Ｗ１よりも狭い幅Ｗ２の前記流れ規制部としての幅狭部が前記パッド側に連設されている
ことを特徴とする熱電変換モジュール。 A thermoelectric conversion module mounted in a package and connected to a conductive plate provided in the package by a bonding wire,
A pair of opposing substrates, electrodes provided on opposing surfaces of the pair of substrates, and a plurality of thermoelectric elements arranged between the pair of substrates and connected to the electrodes by solder,
One substrate of the pair of substrates has a protruding portion protruding from the other substrate, the protruding portion includes a pad for connecting a wire, and a connecting portion for connecting the pad and the electrode, The connection part is formed between the thermoelectric element and the pad, a flow restriction part for restricting the flow of solder from the electrode to which the thermoelectric element is connected to the pad ,
The connecting portion has a portion extending from the electrode along a direction in which the protruding portion protrudes, and the portion has a narrow portion as the flow restricting portion having a width W2 narrower than the width W1. A thermoelectric conversion module characterized in that the thermoelectric conversion module is connected to the pad side . 前記幅狭部は、前記電極の幅より狭い幅を有することを特徴とする請求項１記載の熱電変換モジュール。 The narrow portion, the thermoelectric conversion module according to claim 1, wherein the benzalkonium that have a narrower width than a width of the electrode. 前記接続部は、前記電極の幅と同じ幅を有しており、前記幅狭部は、前記パッドと前記電極との間に配置されていることを特徴とする請求項２記載の熱電変換モジュール。   The thermoelectric conversion module according to claim 2, wherein the connecting portion has the same width as the electrode, and the narrow portion is disposed between the pad and the electrode. . 前記接続部には、前記一方の基板における前記突出部の突出する方向に延びる辺と隣り合う辺に沿って形成される前記パッドが接続されていることを特徴とする請求項１〜３のいずれか一項に記載の熱電変換モジュール。 The front Symbol connecting portions, according to claim 1, characterized in that said pad is formed along a side adjacent to the side extending in the protruding direction of the protruding portion in the one substrate is connected The thermoelectric conversion module as described in any one of Claims. 前記突出部の上面に前記パッドを被覆するテープを貼着したことを特徴とする請求項１〜４のいずれか一項に記載の熱電変換モジュール。 The thermoelectric conversion module according to any one of claims 1 to 4, characterized in that it has adhered to the tape covering the pad on the upper surface of the projecting portion.
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