JP4948815B2 - Method for producing dye-sensitized solar cell - Google Patents

Description

  The present invention relates to a method for producing a dye-sensitized solar cell, and in particular, a dye capable of improving photoelectric conversion efficiency by improving the sinterability of a porous oxide semiconductor layer carrying a sensitizing dye on the surface. The present invention relates to a method for producing a sensitized solar cell.

At present, solar cells using silicon single crystal, silicon polycrystal, amorphous silicon, etc. are put into practical use as one of alternative energy sources for fossil fuels. However, this type of solar cell has problems such as high manufacturing costs.
On the other hand, dye-sensitized solar cells were developed by Grezel, Switzerland, and have advantages such as high photoelectric conversion efficiency and low manufacturing costs by using titanium oxide carrying a sensitizing dye on the surface. It is attracting attention as a next-generation solar cell.

This dye-sensitized solar cell includes a working electrode provided with a porous titanium oxide layer carrying a sensitizing dye on the surface, a counter electrode disposed facing the titanium oxide layer side of the working electrode, and these An electrolyte solution filled between the working electrode and the counter electrode is provided (see Patent Documents 1 and 2). In the above working electrode, a transparent conductive film is formed on a substrate having a smooth surface by sputtering or the like, and a paste containing porous titanium oxide carrying a sensitizing dye on the surface is applied onto the transparent conductive film. The paste is produced by firing.
Japanese Patent Laid-Open No. 06-511113 JP 2004-171815 A

By the way, in a conventional dye-sensitized solar cell, a transparent conductive glass substrate having a smooth surface used in a liquid crystal display (LCD) is used as a working electrode substrate. When used in a solar cell, there are the following problems.
(1) In order to obtain high photoelectric conversion efficiency, it is necessary to roughen the surface of the substrate, but the surface of the transparent conductive glass substrate used in a liquid crystal display (LCD) is insufficient. There was a problem in adhesion between the transparent conductive glass substrate and the titanium oxide layer.
(2) When a transparent resin film is used for the substrate, the paste cannot be heated at a high temperature, and it is difficult to obtain a porous titanium oxide layer in a stable sintered state. there were. When the sinterability of the porous titanium oxide layer is lowered, the desired photoelectric conversion efficiency cannot be obtained, and the performance as a dye-sensitized solar cell is lowered.

  The present invention has been made in view of the above circumstances, and can improve the adhesion and sinterability of the porous oxide semiconductor layer carrying the sensitizing dye on the surface, and thus the dye sensitization. It aims at providing the manufacturing method of the dye-sensitized solar cell which can improve the photoelectric conversion efficiency of a solar cell.

In order to solve the above problems, the present invention provides the following method for producing a dye-sensitized solar cell.
That is, the method for producing a dye-sensitized solar cell according to claim 1 of the present invention includes a working electrode provided with a porous oxide semiconductor layer having a sensitizing dye supported on the surface, and the porous material of the working electrode. A method for producing a dye-sensitized solar cell, comprising: a counter electrode disposed opposite to the oxide semiconductor layer side; and an electrolyte sealed between the working electrode and the counter electrode, the method comprising: Forming a working electrode on the electrode, applying a paste containing a porous oxide semiconductor on the electrode, firing the paste under pressure, and forming the porous oxide semiconductor on the electrode. Forming the layer, and the pressing is performed by moving a pair of plate-like bodies arranged on both sides in the thickness direction of the transparent substrate on which the paste is applied, in the approaching direction, The baking is performed by setting the temperature of the plate-like body on the paste side to Performed while higher than the temperature of the side of the plate, wherein the transparent substrate is a transparent resin substrate, a transparent resin film is selected from any one of the transparent resin sheet, it is characterized.

The method for producing a dye-sensitized solar cell according to claim 2 of the present invention is the method for producing a dye-sensitized solar cell according to claim 1 , wherein the paste-side plate-like body is maintained in a temperature range of 100 to 400 ° C in the firing. The plate-like body on the material side is maintained in a temperature range of 5 to 100 ° C.

The method for producing a dye-sensitized solar cell according to claim 3 of the present invention is characterized in that, in claim 1 or 2, the temperature of the plate-like body on the transparent substrate side is set to be equal to or lower than the softening temperature of the transparent resin. To do.

According to the method for producing a dye-sensitized solar cell of the present invention, the step of forming the electrode of the working electrode on a transparent substrate, the step of applying a paste containing a porous oxide semiconductor on the electrode, And a step of firing the paste under pressure to form the porous oxide semiconductor layer on the electrode, whereby the paste containing the porous oxide semiconductor is subjected to pressure when fired. Compressed in the film thickness direction and fired in a dense state. Thereby, the porous oxide semiconductor layer obtained by baking this paste becomes dense, and adhesion and sinterability are improved.
By the above, the adhesiveness and sintering property of the porous oxide semiconductor layer carrying the sensitizing dye on the surface can be improved, and therefore the photoelectric conversion efficiency of the dye-sensitized solar cell can be improved.

  The best mode of the manufacturing method of the dye-sensitized solar cell of this invention is demonstrated. Note that this embodiment has been specifically described so that the gist of the present invention can be understood more easily, and the present invention is not limited to this embodiment.

FIG. 1 is a cross-sectional view showing a dye-sensitized solar cell manufactured by a method for manufacturing a dye-sensitized solar cell according to an embodiment of the present invention.
In the figure, reference numeral 1 denotes a dye-sensitized solar cell, which is formed on the working electrode 2, the counter electrode 3 disposed opposite to the working electrode 2, and the outer peripheral portion between the working electrode 2 and the counter electrode 3. The sealing member 4 and the electrolyte 5 enclosed in the region formed by the working electrode 2, the counter electrode 3, and the sealing members 4, 4 are roughly configured.

The working electrode 2 includes a transparent substrate 11, a transparent conductive film (electrode) 12 formed on one surface 11 a of the transparent substrate 11, and a porous film formed on one surface 12 a of the transparent conductive film 12. The oxide semiconductor layer 13 is schematically configured.
The transparent substrate 11 is a resin (transparent resin) that is transparent to visible light, such as a transparent resin substrate, a transparent resin film, a transparent resin sheet, or the like, and is usually used as a transparent substrate for solar cells. Anything can be used.

The transparent substrate 11 is appropriately selected from transparent resin in consideration of resistance to the electrolyte 5 and the like. As the transparent resin, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyethersulfone (PES) and the like are preferably used.
Moreover, as a transparent base material 11, the base material which was excellent in the light transmittance as much as possible is preferable on a use, and the transparent base material whose light transmittance is 90% or more is more preferable.

  The transparent conductive film 12 is a film formed on one surface 12 a in order to impart conductivity to the transparent substrate 11. The transparent conductive film 12 is preferably a conductive film containing a conductive metal oxide so that the transparent substrate 11 does not significantly impair the visible light transmission.

As this conductive metal oxide, for example, tin-doped indium oxide (Indium Tin Oxide (ITO)), fluorine-doped tin oxide (Fluorine doped Tin Oxide (FTO)), tin oxide [SnO ₂ ], or the like is preferably used. .
Among these conductive metal oxides, ITO and FTO are preferable from the viewpoint of easy film formation and low cost. The transparent conductive film 12 is preferably a single-layer ITO film made of only ITO or a laminated film obtained by laminating a film made of FTO on this ITO film.
Thereby, it is possible to obtain the transparent conductive film 12 with a small amount of light absorption in the visible light region and a high conductivity.

The porous oxide semiconductor layer 13 is a semiconductor layer mainly composed of metal oxide particles having a sensitizing dye supported on a porous surface, and the metal oxide is not particularly limited, and usually for solar cells. Any material can be used as long as it is used for forming the porous oxide semiconductor layer. As such a metal oxide, for example, titanium oxide (TiO ₂ ), tin oxide (SnO ₂ ), tungsten oxide (WO ₃ ), zinc oxide (ZnO), niobium oxide (Nb ₂ O ₅ ) and the like are preferable. Used.

  Further, as the sensitizing dye, a ruthenium complex containing a bipyridine structure, a terpyridine structure or the like as a ligand, a metal-containing complex such as polyphylline or phthalocyanine, an organic dye such as eosin, rhodamine, or morocyanine can be used. Among them, those suitable for the use and the metal oxide to be used can be appropriately selected.

The counter electrode 3 is schematically configured from a base material 21 and a conductive film (electrode) 22 formed on one surface 21 a of the base material 21.
As the base material 21, any material can be used as long as it is usually used as a base material for solar cells. In particular, it is not necessary to have optical transparency, so that a metal plate, a synthetic resin plate, a synthetic resin can be used. A film, a synthetic resin sheet or the like is used. In addition, the same thing as the transparent base material 11 may be sufficient.

  The conductive film 22 is a thin film made of metal, carbon, or the like formed on one surface 21a in order to impart conductivity to the base material 21. The conductive film 22 is not particularly limited as long as it functions as an electrode. For example, a metal such as platinum or carbon formed by vapor deposition or sputtering, or platinum chloride is used. Those obtained by applying an acid aqueous solution or the like on the substrate 21 and then performing a heat treatment are preferably used.

  As the electrolyte 5, the porous oxide semiconductor layer 13 is impregnated with an electrolyte solution. After the porous oxide semiconductor layer 13 is impregnated with an electrolyte solution, the electrolyte solution is used with an appropriate gelling agent. Thus, any one of gelled (pseudo-solidified) and integrated with the porous oxide semiconductor layer 13 or an ionic liquid, a gel electrolyte containing metal oxide particles and conductive particles is preferably used. .

As the above electrolyte solution, a solution in which an electrolyte component such as iodine, iodide ion or tertiary butyl pyridine is dissolved in an organic solvent such as ethylene carbonate or methoxyacetonitrile is preferably used.
Examples of the gelling agent used for gelling the electrolyte solution include polyvinylidene fluoride, a polyethylene oxide derivative, and an amino acid derivative.

In addition, the ionic liquid is not particularly limited, but is a liquid at room temperature (25 ° C.), and a room temperature melting salt having a quaternized nitrogen atom-containing compound as a cation or an anion. Can be mentioned.
Examples of the cation of the room temperature melting salt include quaternized imidazolium derivatives, quaternized pyridinium derivatives, quaternized ammonium derivatives and the like.

Further, as the anion of the ambient temperature molten salt, BF4-, PF6-, F (HF ) n-, bis (trifluoromethylsulfonyl) imide _{[N (CF 3 SO 2)} 2 -], and the like iodide ion.
Specific examples of the ionic liquid include salts composed of quaternized imidazolium-based cations and iodide ions or bistrifluoromethylsulfonylimide ions.

  The metal oxide particles are not particularly limited in terms of the type and particle size of the substance, but those that are excellent in miscibility with an electrolyte solution mainly composed of an ionic liquid and that gel the electrolyte solution are suitable. Used for. In addition, the metal oxide particles are required to have excellent chemical stability against other coexisting components contained in the electrolyte without reducing the semiconductivity of the electrolyte. The metal oxide particles preferably do not cause deterioration due to oxidation reaction even when the electrolyte contains an oxidation-reduction pair such as iodine / iodide ions or bromine / bromide ions.

Examples of such metal oxide particles include TiO ₂ , SnO ₂ , WO ₃ , ZnO, Nb ₂ O ₅ , In ₂ O ₃ , ZrO ₂ , Ta ₂ O ₅ , La ₂ O ₃ , SrTiO ₃ , Y ₂ O. ₃ , Ho ₂ O ₃ , Bi ₂ O ₃ , CeO ₂ , and Al ₂ O _3, preferably including one or more selected from the group consisting of titanium dioxide (TiO ₂ ) fine particles (nanoparticles) ) Is preferred. The average particle diameter of the titanium dioxide is preferably about 2 nm to 1000 nm.

As said electroconductive particle, the particle | grains which consist of a conductor and a semiconductor are used, and the range of the specific resistance of this electroconductive particle is 1.0x10 < ^-2 > ohm * cm or less, More preferably, it is 1.0. × 10 ⁻³ Ω · cm or less. Further, the type and particle size of the conductive particles are not particularly limited, but those having excellent miscibility with an electrolyte solution mainly composed of an ionic liquid and capable of gelling the electrolyte solution are used. .

  Furthermore, the conductive particles need not have an oxide film (insulating film) or the like formed in the electrolyte to lower the conductivity, and should have excellent chemical stability against other coexisting components contained in the electrolyte. is there. In particular, even when the electrolyte contains an oxidation / reduction pair such as iodine / iodide ion or bromine / bromide ion, an electrolyte that does not deteriorate due to oxidation reaction is preferable.

  Examples of such conductive particles include carbon-based materials, and specific examples include carbon nanotubes, carbon fibers, and carbon black. All methods for producing these substances are known, and commercially available products can also be used.

  The sealing member 4 is not particularly limited as long as it has excellent adhesion to the base material 21 and the transparent base material 11. For example, an adhesive made of a thermoplastic resin having a carboxylic acid group in the molecular chain is desirable. Specific examples include High Milan (Mitsui DuPont Polychemical Co., Ltd.), Binnel (Mitsui DuPont Polychemical Co., Ltd.), Aron Alpha (Toagosei Co., Ltd.), and the like.

Next, the manufacturing method of the dye-sensitized solar cell of this embodiment is demonstrated with reference to FIG.
First, as shown to Fig.2 (a), the transparent conductive film 12 is formed so that the one surface 11a whole region of the transparent base material 11 which consists of transparent resin may be covered. As a method for forming the transparent conductive film 12, a sputtering method for forming a film using a target such as ITO or FTO, a spray liquid that sprays a coating solution containing a raw material such as ITO or FTO, and heats it to make it ITO or FTO. A thermal decomposition method, a CVD method for depositing ITO or FTO obtained by chemically reacting raw material gases such as ITO and FTO, and the like are preferably used.

Next, a metal oxide paste (a paste containing a porous oxide semiconductor) that becomes a porous oxide semiconductor layer at a predetermined position on one surface 12a of the transparent conductive film 12, that is, a position constituting a cell of the dye-sensitized solar cell. ) 31 is applied.
This metal oxide paste 31 is a paste obtained by kneading metal oxide fine particles having a sensitizing dye supported on the surface, an organic solvent, a binder component, etc. Examples of the metal oxide fine particles include TiO 2. _{2, SnO 2, WO 3,} ZnO, Nb 2 O 5 or the like are suitably used. As the sensitizing dye, a ruthenium complex containing a bipyridine structure, a terpyridine structure, or the like as a ligand, a metal-containing complex such as polyphylline or phthalocyanine, an organic dye such as eosin, rhodamine, or morocyanine is preferably used.

  Next, as shown in FIG. 2 (b), a stainless steel plate (plate-like body) 32 is disposed above the metal oxide paste 31, and a stainless steel plate (plate-like body) 33 is disposed below the transparent substrate 11. The upper stainless steel plate 32 is heated using a heating device (not shown), and the temperature is maintained within a temperature range of 100 to 400 ° C., for example, and the lower stainless steel plate 33 is heated or cooled to The temperature is lower than that of the stainless steel plate 32, for example, 5 to 100 ° C.

  Here, the temperature of the lower stainless plate 33 needs to be equal to or lower than the softening temperature of the transparent resin constituting the transparent substrate 11. For example, the transparent resin is 80 ° C. or less for polyethylene terephthalate (PET), 145 ° C. or less for polyethylene naphthalate (PEN), 135 ° C. or less for polycarbonate (PC), and 220 ° C. or less for polyethersulfone (PES).

  Next, the upper stainless steel plate 32 is lowered using a movable device (not shown), and at the same time, the lower stainless steel plate 33 is raised, the lower surface of the upper stainless steel plate 32 is brought into contact with the metal oxide paste 31, and the lower The upper surface of the stainless steel plate 33 is brought into contact with the lower surface of the transparent substrate 11. Thereby, the metal oxide paste 31 is heated by the upper stainless steel plate 32, and is hold | maintained in the temperature range of 100-350 degreeC. On the other hand, the transparent substrate 11 is heated or cooled by the lower stainless steel plate 33 and is maintained in a temperature range of 0 to 220 ° C.

Next, the upper stainless steel plate 32 is further lowered and simultaneously the lower stainless steel plate 33 is further raised, and a predetermined pressure, for example, 0.3 to 50 kg / in, is applied to the metal oxide paste 31 held at 100 to 350 ° C. The metal oxide paste 31 is baked by applying a pressure of cm ² and maintaining this pressure and heating state for a predetermined time.
The firing conditions are, for example, an atmosphere, temperature: 150 to 200 ° C., pressure: 0.5 to 3 kg / cm ² , and retention time at the maximum retention temperature: 0.5 to 120 minutes.

Through this firing process, the organic solvent contained in the metal oxide paste 31 is dissipated, and the binder component is chemically changed to join the metal oxide fine particles together to form the porous metal oxide layer 35.
Next, as shown in FIG. 2C, a dye is supported on the porous metal oxide layer 35 to form a porous oxide semiconductor layer 13.

This dye support can be performed, for example, as follows.
For example, a very small amount of N719 dye powder is added to a solvent in which acetonitrile and t-butanol have a volume ratio of 1: 1 to form a dye-supporting dye solution 36, and the dye solution 36 is stored in a petri dish-like container. To do. Next, the porous metal oxide layer 35 that has been separately heat-treated at about 120 to 150 ° C. in an electric furnace is immersed in the dye solution 36 and left for a whole day and night (about 20 hours) in a dark place. Thereafter, the porous metal oxide layer 35 is taken out of the dye solution 36, washed with a mixed solution of acetonitrile and t-butanol, and dried.

In this way, the porous oxide semiconductor layer 13 having the dye supported on the surface of the porous metal oxide layer 35 can be generated.
Therefore, the working electrode 2 in which the transparent conductive film 12 and the porous oxide semiconductor layer 13 are sequentially formed on the one surface 11a of the transparent substrate 11 can be easily manufactured.

  On the other hand, a conductive film 22 made of platinum or the like was formed on one surface 21a of the substrate 21 by vapor deposition, sputtering, or the like, and the counter electrode 3 was produced. The counter electrode 3 has at least two holes (not shown) penetrating in the thickness direction. This hole serves as an inlet for injecting an electrolyte solution described later.

Next, the working electrode 2 is overlaid on the conductive film 22 of the counter electrode 3 so that the transparent conductive film 12 and the porous oxide semiconductor layer 13 face the conductive film 22, and the counter electrode 3 and the working electrode 2 are stacked. For example, a sealing agent such as an epoxy resin is injected into the outer peripheral portion and then cured, and the periphery of the cell region formed by the counter electrode 3 and the working electrode 2 is sealed with the sealing member 4.
Thereafter, an electrolyte solution is injected from an injection port formed in the counter electrode 3 into a region formed by the working electrode 2, the counter electrode 3, and the sealing members 4 and 4. Thereby, the electrolyte 5 is formed in the region formed by the working electrode 2, the counter electrode 3, and the sealing members 4, 4.
As described above, the dye-sensitized solar cell 1 can be manufactured.

According to the method for manufacturing a dye-sensitized solar cell of this embodiment, the transparent conductive film 12 and the metal oxide paste 31 are sequentially formed on one surface 11a of the transparent substrate 11, and then these transparent substrates 11 to metal are formed. Since the stainless steel plates 32 and 33 are disposed so as to sandwich the oxide paste 31, and the stainless steel plates 32 and 33 are moved in directions close to each other, the metal oxide paste 31 is pressed and fired. The adhesion between the layer 13 and the transparent conductive film 12 on the transparent substrate 11 can be improved, and the sinterability of the porous oxide semiconductor layer 13 can be promoted. The working electrode 2 having high strength can be manufactured at low cost.
Therefore, the characteristics of the porous oxide semiconductor layer 13 carrying the sensitizing dye on the surface can be improved, and as a result, the photoelectric conversion efficiency of the dye-sensitized solar cell 1 can be improved.

Further, in order to pressurize and bake the metal oxide paste 31, it is only necessary to move the temperature-controlled stainless steel plates 32 and 33 in directions close to each other, so that the metal oxide paste 31 can be used as a stable heat source. The sinterability of the metal oxide paste 31 can be improved.
Further, since the temperature of the lower stainless plate 33 is set lower than that of the upper stainless plate 32, and the temperature of the lower stainless plate 33 is set to be equal to or lower than the softening temperature of the transparent resin constituting the transparent substrate 11, the transparent substrate Therefore, the metal oxide paste 31 can be pressurized and heated for a long time, and the sinterability of the metal oxide paste 31 can be further improved. it can.

The manufacturing method of the dye-sensitized solar cell of the present invention will be described in more detail with reference to Examples 1 and 2 and Comparative Examples.
Example 1
A polyethylene naphthalate (PEN) film was used as the transparent base material 11, and a transparent conductive film 12 made of ITO was formed on the transparent base material 11 to produce an ITO-PEN transparent conductive film. Next, a titanium oxide fine particle paste was used as the metal oxide paste 31, and the titanium oxide fine particle paste was applied onto the ITO-PEN transparent conductive film.

Next, a stainless steel plate maintained at about 20 ° C. by a cooling device is placed under the ITO-PEN transparent conductive film, the stainless steel plate heated to about 250 ° C. is pressed against the titanium oxide fine particle paste, and the pressure is 2 kg / cm. Sintering was performed at ^{2 for} 1 hour.
At this time, when the temperature between the ITO-PEN transparent conductive film and the titanium oxide fine particle paste was measured, it was kept at about 180 ° C.
As a result, the titanium oxide fine particle paste became a titanium oxide fine particle porous film having a film thickness of about 15 μm.

Thereafter, an N3 dye (Ru (2,2′-bipyridine-4,4′-dicarboxylic acid) ₂ (NCS) ₂ ) was supported on the titanium oxide fine particle porous film to form a working electrode.
On the other hand, FTO (fluorine-added tin oxide) was formed on a glass substrate, and platinum was formed on the FTO film by a sputtering method to obtain a counter electrode.
Thereafter, the working electrode and the counter electrode were sealed with a sealing member, and a volatile electrolyte solution using methoxyacetonitrile as a solvent was injected to produce the dye-sensitized solar cell of Example 1.

(Example 2)
An ITO-PEN transparent conductive film was produced in the same manner as in Example 1, and a titanium oxide fine particle paste was applied on the ITO-PEN transparent conductive film.
Next, a stainless steel plate was placed under the ITO-PEN transparent conductive film, a stainless steel plate heated to about 180 ° C. was pressed against the titanium oxide fine particle paste, and sintered at a pressure of 2 kg / cm ^{2 for} 1 hour.
At this time, when the temperature between the ITO-PEN transparent conductive film and the titanium oxide fine particle paste was measured, it was kept at about 180 ° C.
As a result, the titanium oxide fine particle paste became a titanium oxide fine particle porous film having a film thickness of about 15 μm.

Next, an N3 dye (Ru (2,2′-bipyridine-4,4′-dicarboxylic acid) ₂ (NCS) ₂ ) was supported on the titanium oxide fine particle porous film to obtain a working electrode.
Further, in the same manner as in Example 1, a counter electrode and an electrolyte solution were prepared, and a dye-sensitized solar cell of Example 2 was manufactured using them.

(Comparative example)
An ITO-PEN transparent conductive film was produced in the same manner as in Example 1, and a titanium oxide fine particle paste was applied on the ITO-PEN transparent conductive film.
Next, this ITO-PEN transparent conductive film was heated in an oven having a furnace temperature of about 180 ° C. for 1 hour to burn the titanium oxide fine particle paste. Thereby, a titanium oxide fine particle porous film was obtained.

Next, an N3 dye (Ru (2,2′-bipyridine-4,4′-dicarboxylic acid) ₂ (NCS) ₂ ) was supported on the titanium oxide fine particle porous film to obtain a working electrode.
Further, in the same manner as in Example 1, a counter electrode and an electrolyte solution were prepared, and a dye-sensitized solar cell of a comparative example was manufactured using them.
Table 1 shows the power generation characteristics of the dye-sensitized solar cells of Examples 1 and 2 and the comparative example. The numerical values in Table 1 are average values of three samples.

According to Table 1, by heating and pressurizing the titanium oxide fine particle paste at a higher temperature than before, the sinterability of the titanium oxide fine particles is improved and the adhesion is improved, and thus the photoelectric conversion efficiency is improved. I found out.
Furthermore, it was confirmed that when the ITO-PEN transparent conductive film was cooled when the titanium oxide fine particle paste was heated and pressed, the ITO-PEN transparent conductive film was not deformed or deteriorated by heat. Moreover, it was found that the adhesion between the ITO-PEN transparent conductive film and the titanium oxide fine particle porous film was improved, and the sinterability of the titanium oxide fine particles was further improved. Therefore, it has been found that the photoelectric conversion efficiency is remarkably improved.

It is sectional drawing which shows the dye-sensitized solar cell of one Embodiment of this invention. It is process drawing which shows the manufacturing method of the dye-sensitized solar cell of one Embodiment of this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Dye-sensitized solar cell, 2 ... Working electrode, 3 ... Counter electrode, 4 ... Sealing member, 5 ... Electrolyte, 11 ... Transparent base material, 12 ... Transparent electrically conductive film, 13 ... Porous oxide semiconductor layer, 21 ... base material, 22 ... conductive film, 31 ... metal oxide paste, 32, 33 ... stainless steel plate, 35 ... porous metal oxide layer, 36 ... dye solution.

Claims (3)

A working electrode provided with a porous oxide semiconductor layer carrying a sensitizing dye on its surface, a counter electrode disposed on the working electrode facing the porous oxide semiconductor layer, the working electrode and the working electrode A method for producing a dye-sensitized solar cell comprising an electrolyte encapsulated between a counter electrode,
Forming an electrode of the working electrode on a transparent substrate;
Applying a paste containing a porous oxide semiconductor on the electrode;
Firing this paste under pressure, and forming the porous oxide semiconductor layer on the electrode, and
The pressurization is performed by moving a pair of plate-like bodies arranged on both sides in the thickness direction of the transparent substrate to which the paste is applied in a direction approaching,
The baking is performed in a state where the temperature of the paste-like plate is higher than the temperature of the transparent substrate-side plate,
The transparent substrate is selected from any one of a transparent resin substrate, a transparent resin film, and a transparent resin sheet.
The manufacturing method of the dye-sensitized solar cell characterized by the above-mentioned. In the firing, the plate-like body on the paste side is kept in a temperature range of 100 to 400 ° C, and the plate-like body on the transparent substrate side is kept in a temperature range of 5 to 100 ° C. Item 2. A method for producing a dye-sensitized solar cell according to Item 1. Method for manufacturing a dye-sensitized solar cell according to claim 1 or 2 wherein the temperature of the pre-SL transparent substrate side of the plate-like body, characterized in that not more than the softening temperature of the transparent resin.

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