JP5197965B2 - Photoelectric conversion element - Google Patents

Description

The present invention relates to a photoelectric conversion element. More particularly, it relates to a photoelectric conversion element comprising a conductive substrate from the new structure was needed.

  The dye-sensitized solar cell has been proposed by a group such as Gretzel of Switzerland, and has attracted attention as a photoelectric conversion element that can be obtained at low cost and high conversion efficiency (for example, Patent Document 1 and Non-Patent Document 1). reference.).

FIG. 9 is a cross-sectional view showing an example of a conventional dye-sensitized solar cell.
The dye-sensitized solar cell 100 includes a first substrate 101 having a porous semiconductor electrode 103 (hereinafter also referred to as a dye-sensitized semiconductor electrode) 103 carrying a sensitizing dye formed on one surface, and a conductive film 104. And the electrolyte layer 106 including a redox pair such as iodine / iodide ions enclosed between them is a main component.

A light-transmitting plate material is used as the first substrate 101, and a transparent conductive layer 102 is disposed on the surface of the first substrate 101 in contact with the dye-sensitized semiconductor electrode 103 in order to provide conductivity. A working electrode (window electrode) 108 is formed by the substrate 101, the transparent conductive layer 102, and the dye-sensitized semiconductor electrode 103.
On the other hand, as the second substrate 105, a conductive layer 104 made of, for example, carbon or platinum is provided on the surface on the side in contact with the electrolyte layer 106, and the counter electrode 109 is formed by the second substrate 105 and the conductive layer 104. Is configured.

  The first substrate 101 and the second substrate 105 are arranged at a predetermined interval so that the dye-sensitized semiconductor electrode 103 and the conductive layer 104 face each other, and a peripheral portion between the two substrates is sealed with, for example, a thermoplastic resin Agent 107 is provided. Then, the two substrates 101 and 105 are bonded together through the sealant 107 to assemble a cell, and an oxidation / reduction pair such as iodine / iodide ions is included between the electrodes 108 and 109 through the electrolyte injection port 110. Examples thereof include an organic electrolyte solution filled and an electrolyte layer 106 for charge transfer formed.

Such a dye-sensitized photoelectric conversion element is said to be capable of drastically reducing costs as compared with a conventional photoelectric conversion element, and is expected to be put to practical use at an early stage. At that time, as one of the obstacles to reduce the cost, the use of a conductive substrate can be mentioned. That is, in the photoelectric conversion element having a conventional structure, the electrode (window electrode) on the light incident side is particularly required to have visible light transmittance and high conductivity. A substrate coated with a transparent conductive metal oxide such as indium (ITO) or fluorine-doped tin oxide (FTO) has been used. Indium (In) used here is a rare metal and becomes a factor that hinders cost reduction of the photoelectric conversion element, as is apparent from the recent rapid increase in price. Therefore, if a dye-sensitized photoelectric conversion element having a completely new structure that does not require such a conductive substrate is realized, the cost can be greatly reduced, and development thereof is expected.
Japanese Patent Laid-Open No. 1-220380 M. Graetzel et al., Nature, 737, p.353, 1991

The present invention has been devised in view of such conventional circumstances, and provides a first electrode that functions as a window electrode (working electrode) of a photoelectric conversion element and does not require a conductive substrate. Is the primary purpose.
It is a second object of the present invention to provide a photoelectric conversion element having a new structure that does not require a conductive substrate and can reduce the cost.

The photoelectric conversion element according to claim 1 of the present invention is a photoelectric conversion element in which a first electrode and a second electrode forming separate bodies are arranged at least one by way of an electrolyte. One electrode has a linear shape, and includes at least a conductive first wire, and a porous oxide semiconductor layer that is disposed on an outer periphery of the first wire and carries a dye, and the photoelectric conversion element has a transparent substrate having an uneven to fit the outer shape of the first wire, the first electrodes is characterized in that it is arranged in a recess of the transparent substrate.

In the present invention, the first substrate having conductivity is used in place of the conductive substrate, and a linear configuration in which a porous oxide semiconductor layer is disposed on the outer periphery thereof is adopted, thereby eliminating the need for the conductive substrate. One electrode can be provided.
Further, the present invention uses a linear first electrode composed of a conductive first wire and a porous oxide semiconductor layer disposed on the outer periphery of the first wire and carrying a dye. Thus, it is possible to provide a photoelectric conversion element having a new structure that eliminates the need for a conductive substrate and can reduce costs.

<First embodiment>
Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a cross-sectional view showing an example of the electrode (first electrode) of the present invention. FIG. 2 is a diagram illustrating an example of a photoelectric conversion element using the first electrode, in which (a) is a cross-sectional view and (b) is a top view.
As shown in FIG. 1, a first electrode 10 of the present invention includes a first wire 11 having at least conductivity, and a porous oxide semiconductor disposed on the outer periphery of the first wire 11 and carrying a sensitizing dye. It is comprised from the layer 12, and has comprised linear form, It is characterized by the above-mentioned.

  In a conventional electrode (working electrode) using a transparent conductive substrate in which a transparent conductive film such as FTO or ITO is formed on a transparent substrate made of glass, plastic, etc., the heat resistance problem of the transparent substrate Therefore, at the time of forming the porous oxide semiconductor layer, firing at a high temperature of about 600 ° C. or more for glass and about 150 ° C. or more for plastic was difficult. On the other hand, in the first electrode 10 of the present invention, the use of the metal wire for the first wire 11 eliminates the above-described problems, and can be sufficiently fired even at high temperatures. It is suitable as a working electrode.

In addition, since a linear wire is used without using a plate-like substrate, it has flexibility and can be used as an electrode for photoelectric conversion elements having various structures.
Furthermore, unlike a conventional electrode, a glass substrate or a transparent conductive film is not used, so that the electrode can be manufactured at low cost.

Specific examples of the first wire 11 include a wire made of any one of Ti, Ni, W, Rh, and Mo, or an alloy thereof, a hollow wire, and a rod. Further, a linear base material made of a material that is electrically conductive and electrochemically inactive with respect to the electrolyte is made of, for example, any one of Ti, Ni, W, Rh, Mo, or an alloy thereof. What was covered is also used as the first wire 11.
The thickness (diameter) of the first wire 11 is not particularly limited, but is preferably 10 [μm] to 5 [m], for example. However, in order to fully exhibit flexibility, the thickness of the first wire 11 is better as it is thinner.

The porous oxide semiconductor layer 12 is provided around the first wire 11, and a sensitizing dye is supported on at least a part of the surface of the porous oxide semiconductor layer 12.
The porous oxide semiconductor layer 12 may cover only a part of the outer periphery of the first wire 11. However, the porous oxide semiconductor layer 12 has a decrease in the light collection capability, the promotion of the reverse electron transfer reaction, etc. It is preferable to completely cover the outer periphery of the wire 11.

The semiconductor for forming the porous oxide semiconductor layer 12 is not particularly limited, and any semiconductor can be used as long as it is generally used for forming a porous oxide semiconductor for a photoelectric conversion element. As such a semiconductor, for example, titanium oxide (TiO ₂ ), tin oxide (SnO ₂ ), zinc oxide (ZnO), niobium oxide (Nb ₂ O ₅ ), tungsten oxide (WO ₃ ), or the like can be used. .

As a method for forming the porous oxide semiconductor layer 12, for example, a dispersion in which commercially available oxide semiconductor fine particles are dispersed in a desired dispersion medium or a colloidal solution that can be prepared by a sol-gel method is used as necessary. Then, after adding a desired additive, it is arranged on the outer periphery of the first wire 11 by a method such as dipping, coating, or extruding, followed by firing.
The thickness of the porous oxide semiconductor layer 12 is not particularly limited, but is preferably 1 [μm] to 50 [μm], for example.

  Examples of sensitizing dyes include ruthenium complexes containing bipyridine structure and terpyridine structure as ligands, metal-containing complexes such as porphyrin and phthalocyanine, and organic dyes such as eosin, rhodamine and merocyanine. From these, those having an excitation behavior suitable for the application and the semiconductor used may be appropriately selected.

Next, a photoelectric conversion element using such a first electrode 10 will be described.
As shown in FIG. 2, in the photoelectric conversion element 1 of the present invention, a first electrode (working electrode) 10 and a second electrode (counter electrode) 13 forming separate bodies are arranged at least one through an electrolyte. The first electrode 10 has a linear shape, and has at least a conductive first wire 11 and a porous material disposed on the outer periphery of the first wire 11 and carrying a dye. It is characterized by comprising the oxide semiconductor layer 12.

In this invention, the structure of the photoelectric conversion element 1 which does not require a conductive substrate and is completely different from the conventional one is proposed. Conductivity is assigned to, for example, a metal wire (first wire 11) having good corrosion resistance, and a transparent but non-conductive substrate is used to seal the electrolyte. In addition, even if an opaque metal is used for the substrate instead of the transparent substrate, the photoelectric conversion element 1 having a structure that does not substantially hinder the collection of light can be provided by selecting the size of the substrate.
In such a photoelectric conversion element 1, since the outer peripheral surface of the linear first electrode 10 becomes a light receiving surface, the projected area with respect to the irradiation light can be increased, and the dependency on the light incident angle can be reduced. Be expected.

In FIG. 2, reference numeral 1 denotes a dye-sensitized photoelectric conversion element, 10 denotes a first electrode (working electrode), 11 denotes a first wire, 12 denotes a porous oxide semiconductor layer, 13 denotes a second electrode (counter electrode), Reference numeral 14 denotes a first transparent substrate, 15 denotes a transparent conductive film, 16 denotes a metal electrode film, 17 denotes an electrolyte layer, 18 denotes a second transparent substrate, and 19 denotes a sealing member (spacer).
In the photoelectric conversion element 1, the first electrode 10 is disposed through the electrolyte layer 17 in a space in which the second electrode 13 and the second transparent substrate 18 are disposed to face each other via a sealing member (spacer) 19. It arrange | positions facing the two electrodes 13, and the outer peripheral part of the said space adhere | attaches and seals, and functions as a photoelectric conversion element.

In the photoelectric conversion element 1 of the present embodiment, the second electrode 13 has a planar shape, and a plurality of the first electrodes 10 are arranged in parallel so as to face the second electrode 13. By arranging a plurality of first electrodes 10 in parallel so as to face one planar second electrode 13, the element can be reduced in size and thickness.
Further, as shown in FIG. 2B, the first wire 11 is preferably drawn out of the element. Thereby, the generated electricity can be easily taken out.

The second electrode (counter electrode) 13 is formed by forming a transparent electrode film 15 and a metal electrode layer 16 on the surface of the first transparent substrate 14 on the side facing the first electrode 10.
As the 1st transparent base material 14, the board | substrate which consists of a transparent material is used, and what is normally used as a transparent base material of a photoelectric conversion element, such as glass, a polyethylene terephthalate, a polycarbonate, polyether sulfone, etc. Even things can be used. The first transparent base material 14 is appropriately selected from these in consideration of resistance to the electrolytic solution. Moreover, as a 1st transparent base material 14, the board | substrate which is excellent in the light transmittance as much as possible is preferable on a use, and the board | substrate whose transmittance | permeability is 85% or more is more preferable.

  The transparent conductive film 15 is a thin film formed on one surface 14 a in order to impart conductivity to the first transparent base material 14. In the present invention, the transparent conductive film 15 is preferably a thin film made of a conductive metal oxide so that the transparency of the first transparent substrate 14 is not significantly impaired.

  As the conductive metal oxide forming the transparent conductive film 15, for example, fluorine-added tin oxide (FTO), tin-added indium oxide (ITO), tin oxide (TO), or the like is used, and among them, FTO and ITO are preferable. .

  The transparent conductive film 15 is preferably a single-layer film made of only FTO or ITO, or a laminated film in which a film made of FTO is stacked on a film made of ITO. By making the transparent conductive film 12 a single-layer film made of only FTO or a laminated film in which a film made of FTO is laminated on a film made of ITO, the amount of light absorbed in the visible region is small, and the conductivity A transparent conductive substrate having a high thickness can be formed.

  As a method for forming the transparent conductive film 15, a known appropriate method corresponding to the material may be used. For example, sputtering, vapor deposition, spray pyrolysis (SPD), chemical vapor deposition (CVD) ) And the like.

As the metal electrode layer 16, a platinum film or the like can be used. For example, when the metal electrode layer 16 is a platinum film, the film thickness of the metal electrode layer 16 is in the range of 1 nm to 500 nm. If the platinum film thickness exceeds the above range, sufficient light transmission cannot be obtained, and the characteristics of the photoelectric conversion element 1 may be deteriorated. Moreover, when the film thickness of the platinum film is less than the above range, sufficient conductivity may not be obtained, which may lead to deterioration of the characteristics of the photoelectric conversion element 1.
As a method for forming the metal electrode layer 16, for example, in the case of a platinum film, a method of applying chloroplatinic acid and performing a heat treatment can be exemplified, and the metal electrode layer 16 may be formed by sputtering or vapor deposition.

  The electrolyte layer 17 is formed by impregnating the porous oxide semiconductor layer 12 with an electrolytic solution, or after impregnating the porous oxide semiconductor layer 12 with the electrolytic solution, the electrolytic solution is applied to an appropriate gel. Gelling (pseudo-solidification) using a chemical agent and formed integrally with the porous oxide semiconductor layer 12, or based on an ionic liquid, further oxide semiconductor particles and conductive A gel electrolyte containing conductive particles is used.

As said electrolyte solution, what melt | dissolved electrolyte components, such as an iodine, iodide ion, and tertiary butyl pyridine, in organic solvents and ionic liquids, such as ethylene carbonate and methoxyacetonitrile, is used.
Examples of the gelling agent used for gelling the electrolytic solution include polyvinylidene fluoride, a polyethylene oxide derivative, and an amino acid derivative.

Although it does not specifically limit as said ionic liquid, It is a liquid at room temperature, For example, the normal temperature molten salt which used the compound which has the quaternized nitrogen atom as a cation is mentioned.
Examples of the cation of the room temperature molten salt include quaternized imidazolium derivatives, quaternized pyridinium derivatives, and quaternized ammonium derivatives.
Examples of the anion of the ambient temperature molten _{^{salt, BF 4 -, PF 6 -}} , (HF) n -, bis (trifluoromethylsulfonyl) imide _{[N (CF 3 S0 2)} 2 -], and the like iodide ion.
Specific examples of the ionic liquid include salts composed of quaternized imidazolium-based cations and iodide ions or bistrifluoromethylsulfonylimide ions.

  The oxide semiconductor particles are not particularly limited in terms of the type and particle size of the substance, but those that are excellent in miscibility with an electrolytic solution mainly composed of an ionic liquid and that gel the electrolytic solution are used. Further, the oxide semiconductor particles are required to have excellent chemical stability against other coexisting components contained in the electrolyte without reducing the semiconductivity of the electrolyte. In particular, even when the electrolyte contains a redox pair such as iodine / iodide ions or bromine / bromide ions, the oxide semiconductor particles are preferably those that do not deteriorate due to an oxidation reaction.

Examples of such oxide semiconductor particles include TiO ₂ , SnO ₂ , SiO ₂ , ZnO, Nb ₂ O ₅ , In ₂ O ₃ , ZrO ₂ , Al ₂ O ₃ , WO ₃ , SrTiO ₃ , Ta ₂ O ₅ , One or a mixture of two or more selected from the group consisting of La ₂ O ₃ , Y ₂ O ₃ , Ho ₂ O ₃ , Bi ₂ O ₃ , CeO ₂ is preferable, and the average particle size is about 2 nm to 1000 nm. preferable.

  As the conductive fine particles, conductive particles such as a conductor and a semiconductor are used. Further, the type and particle size of the conductive particles are not particularly limited, and those that are excellent in miscibility with an electrolytic solution mainly composed of an ionic liquid and that gel this electrolytic solution are used. Furthermore, it is necessary to be excellent in chemical stability against other coexisting components contained in the electrolyte. In particular, even when the electrolyte contains an oxidation / reduction pair such as iodine / iodide ion or bromine / bromide ion, an electrolyte that does not deteriorate due to oxidation reaction is preferable.

  Examples of such conductive fine particles include those composed mainly of carbon, and specific examples include particles such as carbon nanotubes, carbon fibers, and carbon black. All methods for producing these substances are known, and commercially available products can also be used.

  As the 2nd transparent base material 18, the thing similar to the 1st transparent base material 14 mentioned above can be used.

The sealing member (spacer) 19 is not particularly limited as long as it has excellent adhesion to the second electrode 13 and the second transparent substrate 18. For example, from the thermoplastic resin having a carboxylic acid group in the molecular chain. In particular, in addition to Hi Milan (Mitsui DuPont Polychemical Co., Ltd.), Binnel (DuPont Co., Ltd.), UV curable materials [e.g., 31X-101 (Three Bond Co., Ltd.)], etc. Is mentioned.
Note that one of the second electrode 13 and the second transparent substrate 18 may not be transparent. However, it is more preferable if the second transparent substrate 18 is transparent because the range of selections for the combination of the first transparent substrate 14, the transparent conductive film 15, and the metal electrode layer 16 constituting the second electrode 13 is widened.

<Second embodiment>
Hereinafter, a second embodiment of the photoelectric conversion element according to the present invention will be described with reference to the drawings.
FIG. 3 is a diagram illustrating an example of the photoelectric conversion element according to the present embodiment, in which (a) is a cross-sectional view and (b) is a top view. In the present embodiment, differences from the first embodiment described above will be mainly described, and description of similar parts will be omitted.

  This embodiment is substantially the same as the first embodiment except that the shape of the second electrode provided in the photoelectric conversion element is different. That is, in the first embodiment, the second electrode 13 has a planar shape, but in the present embodiment, the second electrode 20 has a linear shape.

That is, in the photoelectric conversion element 1 </ b> B (1) of the present embodiment, the first electrode 10 has a linear shape and faces the plurality of second electrodes 20. 20 and is alternately arranged. By forming the second electrode 20 in a linear shape and arranging it in the gap portion of the first electrode 10, the space can be used effectively and the thickness is further reduced.
Moreover, as shown in FIG.3 (b), it is preferable that the 1st wire 11 and the 2nd electrode 20 are withdraw | derived to the exterior of an element. Thereby, the generated electricity can be easily taken out.

The second electrode 20 has a linear shape and is made of, for example, platinum (Pt), carbon, or a conductive polymer. Also, a linear substrate made of a material that is electrically conductive and electrochemically inert to the electrolyte is coated with Pt, or the linear substrate is coated with carbon or a conductive polymer. This is also used as the second electrode 20. In such a second electrode 20, transfer of charges with the electrolyte proceeds promptly.
Specific examples of such a linear substrate include inert metals such as Ti, Ni, W, Rh, and Mo, or carbon fibers.

Specifically, as the carbon, for example, particles such as graphitized (crystallized) carbon or amorphous carbon, fullerene, carbon nanotube, carbon fiber, and carbon black may be pasted and applied. When such carbon is used, it is preferable to remove unnecessary adsorbate by heating, baking treatment, etc., because the electrode reaction of the iodine redox couple proceeds smoothly.
Examples of the conductive polymer constituting the material of the second electrode 20 include PEDOT [Poly (3,4-ethylenedioxythiophene): “polyethylenedioxythiophene]] derivatives, PANI [Polyaniline] derivatives, and the like. .

  In JP 2003-77550 A, there is a description that a gold wire is used for the counter electrode. However, when an element is actually constructed with such a configuration, the gold wire is easily dissolved in the electrolyte solution used together. Therefore, the photoelectric conversion element is not presented and scientific accuracy is lacking.

When both the first electrode 10 and the second electrode 13 are linear as in the present embodiment, the diameter of the second electrode 13 is preferably ¼ or less of the diameter of the second electrode 13. Thereby, the some 1st electrode 10 can be arrange | positioned without a clearance gap, and the 2nd electrode 13 can be provided in the clearance gap.
However, since the resistance increases as the second electrode 13 becomes thinner, a thicker one is preferable. Therefore, the diameter of the second electrode 13 is preferably about ¼ of the diameter of the first electrode 10.

In addition, the photoelectric conversion element 1 </ b> C (1) illustrated in FIG. 4 has a part of the first electrode 10 contained in the second transparent base material (transparent base material) 18. Thus, by making a part of the first electrode 10 reside in the second transparent substrate 18, the amount of electrolyte injected into the element can be reduced, and the element can be reduced in size and thickness. .

  Further, the photoelectric conversion element 1 </ b> D (1) illustrated in FIG. 5 has the second electrode 20 disposed above and below the first electrode 10. Thus, by arranging the second electrode 20 above and below the first electrode 10, it is possible to reduce a portion where the distance is between the first electrode 10 and the second electrode 20. For light incident from the vertical direction, even if the number of second electrodes 20 functioning as a counter electrode is increased, there is almost no decrease in conversion efficiency.

<Third embodiment>
Hereinafter, a third embodiment of the photoelectric conversion element according to the present invention will be described with reference to the drawings.
FIG. 6 is a cross-sectional view illustrating an example of the photoelectric conversion element according to this embodiment. In this embodiment, differences from the above-described embodiment will be mainly described, and description of similar parts will be omitted.

  This embodiment is substantially the same as the second embodiment except that the shape of the second electrode provided in the photoelectric conversion element is different. That is, in the second embodiment, the second electrode 20 has a linear shape, but in the present embodiment, the second electrode 30 is constituted by a conductive wire printed on a substrate. Thus, by forming the second electrode by printing, the element can be reduced in size and thickness.

The second electrode 30 is formed, for example, by printing a conductive wire 32 containing Pt on a Ti substrate 31.
The conductive wire 32 may be formed in a stripe shape directly on the Ti substrate 31 as shown in FIG. 6A, or Pt formed on the entire surface of the Ti substrate 31 as shown in FIG. 6B. The film 33 may be formed in a stripe shape.
In addition, the conductive wire 32 can use carbon or a conductive polymer instead of Pt.

  The photoelectric conversion element of the present invention has been described above, but the present invention is not limited to the above example, and can be appropriately changed as necessary.

  For example, in the above-described embodiment, the first electrode (working electrode) uses the first wire material having conductivity instead of the conductive substrate, and adopts a linear configuration to eliminate the need for the conductive substrate. Although the photoelectric conversion element having a new structure capable of reducing the cost by using the first electrode (working electrode) has been described, the gist of the present invention can be applied to the second electrode (counter electrode). It is.

  In other words, in the second electrode, by adopting a linear configuration, a conductive substrate is unnecessary, and by using such a second electrode, a photoelectric conversion element having a new structure that can reduce costs can be obtained. it can.

For example, in the photoelectric conversion element 50 shown in FIG. 7, the first electrode 51 has a planar shape, and a plurality of second electrodes 55 are arranged in parallel so as to face the first electrode 51. By arranging a plurality of second electrodes 55 in parallel so as to face one planar first electrode 51, the element can be reduced in size and thickness.
The working electrode 51 includes a transparent substrate 52 and a porous oxide semiconductor layer 54 formed on one surface of the transparent substrate 52 via a transparent conductive film 53.
As the 2nd electrode 55 which makes a counter electrode, the thing similar to the 2nd electrode 20 mentioned above is used, for example.
Note that the combination of the second electrode 55 and the second transparent substrate 18 shown in FIG. 7 may be replaced with the same combination as the second electrode 30 shown in FIG.

(Example)
In this example, a photoelectric conversion element having a configuration in which both the first electrode and the second electrode form a linear shape and the results of examining the photoelectric conversion characteristics will be described.
Prepare a Ti wire with a diameter of 0.2 mm as the first wire, apply this Ti wire by immersing it in titanium oxide paste (Solaronix, Ti-Nanoxide T), applying it repeatedly and drying it three times. Sintered at 500 ° C. for 1 hour to obtain a Ti wire with a porous titanium oxide film. The application range of titanium oxide was 5 cm in length. The thickness of the titanium oxide was about 6 μm.

  The wire was immersed in a 0.3 mM ruthenium dye (N719), acetonitrile / tert-butanol = 1: 1 solution and allowed to stand at room temperature for 24 hours to carry the dye on the surface of titanium oxide. After pulling up from the dye solution, it was washed with the above mixed solution, and this was used as the first electrode.

  A Pt wire having a diameter of 0.08 mm is prepared as a second electrode, and six second electrodes and five first electrodes are alternately arranged on an alkali-free glass substrate, and a PET film having a thickness of 0.2 mm is used as a spacer. Then, it was immersed in a volatile electrolyte using methoxyacetonitrile as a solvent, and then a non-alkali glass was also put on the upper surface to form a cell.

Since the metal wires are simply arranged without any particular control, the light receiving area of the cell is approximately 0.75 cm ² (= 5 cm × 0.15 cm) including the area occupied by the gap between the wires. Since the light receiving area (active area) of the working electrode is the projected area of the Ti wire with the titanium oxide film carrying the dye, it is converted to 0.53 cm ² (5 cm × 0.0212 cm × 5), which is used to estimate the short-circuit current density. The error is included in the range of about 1.5 times.

The photoelectric conversion element produced as described above was placed under the light irradiation of a solar simulator (AM1.5, 100 mW / cm ² ), and a current-potential curve (IV curve) was measured. The result is shown in FIG.
FIG. 8 confirms that the photoelectric conversion efficiency of the photoelectric conversion element manufactured in this example is 1.25% (J _SC = 2.4 mA / cm ² , V _OC = 730 mV, ff = 0.71). ).

  The present invention is applicable to photoelectric conversion elements and electrodes used therefor.

It is sectional drawing which shows an example of the 1st electrode which concerns on this invention. It is a figure which shows an example of the photoelectric conversion element which concerns on this invention, (a) represents sectional drawing, (b) represents a top view. It is a figure which shows another example of the photoelectric conversion element which concerns on this invention, (a) is sectional drawing, (b) represents a top view. It is sectional drawing which shows another example of the photoelectric conversion element which concerns on this invention. It is sectional drawing which shows another example of the photoelectric conversion element which concerns on this invention. It is sectional drawing which shows another example of the photoelectric conversion element which concerns on this invention. It is sectional drawing which shows another example of the photoelectric conversion element which concerns on this invention. It is a graph which shows an example of the IV curve of the photoelectric conversion element which concerns on this invention. It is sectional drawing which shows an example of the conventional photoelectric conversion element.

Explanation of symbols

  1A, 1B, 1C, 1D, 1E (1) Photoelectric conversion element, 10 1st electrode, 11 1st wire, 12 Porous oxide semiconductor layer, 13, 20 2nd electrode, 14 1st transparent base material, 15 Transparent Conductive film, 16 metal electrode film, 17 electrolyte layer, 18 second transparent substrate, 19 sealing member (spacer).

Claims (1)

The first electrode and the second electrode forming separate bodies are at least one photoelectric conversion element arranged via an electrolyte,
The first electrode has a linear shape, and includes at least a first wire having conductivity, and a porous oxide semiconductor layer that is disposed on the outer periphery of the first wire and carries a dye,
The photoelectric conversion element has a transparent base material having irregularities according to the outer shape of the first wire,
It said first electrodes includes a photoelectric conversion element characterized in that it is arranged in a recess of the transparent substrate.

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