JP4946179B2 - Electro-optical device and electronic apparatus - Google Patents

Description

The present invention relates to, for example, an electro-optical device such as a liquid crystal device capable of reducing liquid crystal alignment disturbance due to a lateral electric field, a manufacturing method thereof, and a technical field of an electronic apparatus including such an electro-optical device.

In a liquid crystal device which is an example of this type of electro-optical device, liquid crystal molecules interposed between these electrodes by applying a predetermined voltage between a pixel electrode and a counter electrode provided on each of a pair of substrates holding liquid crystal The orientation is controlled and an image is displayed. Therefore, when the distance between the opposing substrates is not uniform within the screen, the electric field strength applied between the opposing electrodes is different within the screen,
This is a big problem in image quality.

In addition, when unevenness in film thickness or rubbing occurs in an alignment film such as polyimide (PI) that controls the alignment of liquid crystal molecules, abnormal alignment of the liquid crystal is caused, and the image quality obtained by the liquid crystal display device is extremely high. There is a problem of deterioration.

In order to solve these problems, Patent Document 1 provides columnar spacers arranged in a checkered pattern at a ratio of one for every two pixels, thereby keeping the distance between the opposing substrates constant in the screen. In addition, a technique for reducing the unevenness of the alignment film so that rubbing unevenness does not occur in the alignment film is disclosed.

In addition, in this type of electro-optical device, in general, a voltage polarity applied to each pixel electrode is set in order to prevent deterioration of electro-optical materials such as liquid crystal by applying a DC voltage, and to prevent crosstalk and flicker in a display image. A reversal drive method that reverses by rule is adopted. As such an inversion driving method, for example, while performing display corresponding to an image signal of one frame or field, the pixel electrodes arranged in odd rows are driven with a positive potential with reference to the potential of the counter electrode. During the display corresponding to the image signal of the next frame or field, the pixel electrodes arranged in the even rows are driven with a negative potential with reference to the potential of the counter electrode. The pixel electrodes arranged in an odd row are driven with a negative potential (that is, the pixel electrodes in the same row are driven with a potential of the same polarity while driving the pixel electrodes of the same row with a potential of the same polarity). The 1H inversion driving method is used as an inversion driving method that makes control relatively easy and enables high-quality image display.

JP 2003-140157 A

When this type of electro-optical device is driven by a driving method such as the 1H inversion driving method, among the pixel electrodes adjacent to each other on the TFT array substrate, between the electrodes having opposite polarities of the applied voltage, There is a problem that an electric field in a parallel direction (a so-called lateral electric field) is generated. Here, the lateral electric field causes a malfunction of the electro-optic material for an electro-optic material that is assumed to be controlled by a vertical electric field formed between the pixel electrode and the counter electrode facing the pixel electrode. as a result,
In a region where the electro-optic material is affected by a lateral electric field, a modulation defect such as light leakage occurs and the contrast ratio decreases.

However, the technique disclosed in Patent Document 1 is a technique proposed with a focus on reducing rubbing unevenness while maintaining a constant spacing between the substrates, and does not describe a technique for reducing a lateral electric field. Absent. In addition, since the columnar spacers are in contact with the element substrate and the counter substrate, the shape of the alignment film and the detailed design of the rubbing state are made to the extent that the lateral electric field can be effectively reduced in the vicinity of the pixel boundary. Is hard to say. More specifically, in order to propose the rubbing unevenness, when the portion extending near the boundary of the pixel electrode and the portion extending in the periphery of the alignment film continuously extend flatly, Of the electric field generated between the pixel electrodes formed on the side, the component along the substrate surface, that is, the lateral electric field acts on the liquid crystal molecules existing in the vicinity of the boundary of the pixel electrode, and the alignment control for the liquid crystal molecules becomes difficult. .

Therefore, the present invention has been made in view of the above problems and the like, and for example, the rubbing unevenness of the alignment film is reduced to such an extent that the display performance is not deteriorated. In addition, it is possible to effectively reduce the disorder of the alignment of the liquid crystal molecules due to the transverse electric field, and to reduce defects in image display such as light leakage due to the disorder of the alignment of the liquid crystal molecules, and a method for manufacturing the same, and the like. It is an object to provide an electronic apparatus including such an electro-optical device.

In order to solve the above-described problems, an electro-optical device according to a first aspect of the present invention includes an element substrate and a counter substrate disposed so as to face the element substrate. A first pixel electrode provided in an image display region, a second pixel electrode adjacent to the first pixel electrode in the extending direction of the data line, and a plane the third pixel electrode adjacent in the extending direction of the scanning line and the first pixel electrode in view, and the third pixel electrode with adjacent in the extending direction of the scanning line and the second pixel electrode in a plan view A plurality of pixel electrodes including fourth pixel electrodes adjacent to each other in the extending direction of the data line, and a corner portion of the first pixel electrode on the fourth pixel electrode side; A first protrusion provided in a layer between the substrate and A second substrate, a common electrode, and a second convex portion provided at a position facing the corner portion of the fourth pixel electrode on the first pixel electrode side, and the second pixel electrode of the second pixel electrode. No convex portion is formed in the same layer as the first convex portion and the same layer of the second convex portion in the corner portion on the three electrode side and the corner portion on the second electrode side of the third pixel electrode.

In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described electro-optical device according to the first or second aspect of the present invention.

According to the electronic apparatus of the present invention, since the electro-optical device according to the first or second invention of the present invention described above is provided, a projection display device, a mobile phone, Various electronic devices such as an electronic notebook, a word processor, a viewfinder type or a monitor direct-view type video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized. In addition, as an electronic apparatus according to the present invention, for example, an electrophoretic device such as electronic paper can be realized.

  Such an operation and other advantages of the present invention will become apparent from the embodiments described below.

Hereinafter, an electro-optical device according to the present embodiment, a manufacturing method thereof, and an electronic apparatus according to the present embodiment including the electro-optical device will be described with reference to the drawings. In this embodiment,
An example in which the electro-optical device according to the invention is applied to a liquid crystal device will be described.

First, the main configuration of the liquid crystal device 1 according to the present embodiment will be described with reference to FIGS.

FIG. 1 shows an equivalent circuit of a display panel in the liquid crystal device 1. 2 and 3 show T
2 is a plan view illustrating a partial configuration related to a pixel portion on an FT array substrate 10. FIG. Each of FIGS. 2 and 3 corresponds to a lower layer portion (FIG. 2) and an upper layer portion (FIG. 3) in a laminated structure to be described later. FIG.
These are AA 'sectional drawings at the time of superposing Drawing 2 and Drawing 3. FIG. In FIG. 4, the scale ratio of each layer / member is appropriately changed so that each layer / member has a size that can be recognized on the drawing.

(Principle configuration of display panel)
In FIG. 1, in the display panel, a plurality of scanning lines 11a and a plurality of data lines 6a are arranged so as to cross each other, and pixels defined by the scanning lines 11a and the data lines 6a are arranged between the lines. An area is provided. In each pixel region, a TFT 30, a pixel electrode 9a, and a storage capacitor 70 are provided. The TFT 30 receives the image signal S1 supplied from the data line 6a.
, S2,..., Sn are applied to the selected pixel, the gate is connected to the scanning line 11a, the source is connected to the data line 6a, and the drain is connected to the pixel electrode 9a.
The pixel electrode 9a forms a liquid crystal capacitance with the counter electrode 21 described later, and the input image signal S.
1, S2,..., Sn are applied to the pixel region and held for a certain period. One electrode of the storage capacitor 70 is connected to the drain of the TFT 30 in parallel with the pixel electrode 9a, and the other electrode is connected to the capacitor wiring 400 with a fixed potential so as to have a constant potential.

The liquid crystal device 1 adopts, for example, a TFT active matrix driving system, and applies scanning signals G1, G2,..., Gm to each scanning line 11a from a driving circuit (not shown) in sequence,
As a result, image signals S1, S2,..., Sn are applied to the data line 6a from a drive circuit (not shown) in a column of the selected pixel region in the horizontal direction in which the TFT 30 is turned on. At this time, the image signals S1, S2,..., Sn may be sequentially supplied to the data lines 6a, or may be supplied to the plurality of data lines 6a (for example, for each group) at the same timing. It may be a thing. Thereby, an image signal is supplied to the pixel electrode 9a in the selected pixel region. In the display panel, since the TFT array substrate 10 and the counter substrate 20 are disposed to face each other via the liquid crystal layer 50 (see FIG. 4), an electric field is applied to the liquid crystal layer 50 for each pixel region that is partitioned and arranged as described above. Is applied, the amount of transmitted light between the two substrates is controlled for each pixel region, and the image is displayed in gradation. Further, the image signal held in each pixel area at this time is prevented from leaking by the storage capacitor 70.

Further, here, the 1H inversion driving method is adopted for the input of the image signal. Details thereof will be described later.

(Specific configuration of display panel)
Next, a specific configuration of the liquid crystal device 1 that realizes the above-described operation will be described with reference to FIGS.

2 to 4, the circuit element and the pixel electrode 9 a described above are formed on the TFT array substrate 10. The TFT array substrate 10 is made of, for example, a glass substrate, a quartz substrate, an SOI substrate, a semiconductor substrate, and the like, and is disposed to face the counter substrate 20 made of, for example, a glass substrate or a quartz substrate. The circuit elements are provided to drive the pixel electrodes 9a. Here, the circuit elements are stacked in a range from directly above the TFT array substrate 10 to immediately below the pixel electrodes 9a, from the scanning line 11a to the fourth interlayer insulating film 44. Pointing (see FIG. 4). Further, the pixel electrode 9a (the outline is indicated by a broken line 9a 'in FIG. 3) is disposed in each of the pixel areas partitioned vertically and horizontally, and the data lines 6a and the scanning lines 11a are arranged in a lattice shape at the boundaries. It is formed so that it may be arranged (FIG. 2
And FIG. 3).

The patterned conductive film constituting each circuit element includes, in order from the bottom, a first layer including the scanning line 11a, a second layer including the gate electrode 3a, a third layer including the fixed potential side capacitor electrode of the storage capacitor 70,
The fourth layer includes the data lines 6a and the like, and the fifth layer includes the capacitor wiring 400 and the like. The first layer
The base insulating film 12 is provided between the second layers, the first interlayer insulating film 41 is provided between the second layer and the third layer, and the third layer to the fourth layer.
A second interlayer insulating film 42 is provided between the layers, a third interlayer insulating film 43 is provided between the fourth and fifth layers, and a fourth interlayer insulating film 44 is provided between the fifth layer and the pixel electrode 9a. The short circuit between each element is prevented. Of these, the first to third layers are shown in FIG. 2 as the lower layer portion, and the fourth layer, the fifth layer, and the pixel electrode 9a are shown in FIG. 3 as the upper layer portion.

<Structure of first layer-scanning line, etc .->
The first layer is composed of scanning lines 11a. The scanning line 11a is patterned into a shape including a main line portion extending in the X direction in FIG. 2 and a protruding portion extending in the Y direction in FIG. 2 in which the data line 6a or the capacitor wiring 400 extends. Such a scanning line 11a is made of, for example, conductive polysilicon, and in addition, a metal simple substance, an alloy, a metal silicide, a polysilicon containing at least one of refractory metals such as Ti, Cr, W, Ta, and Mo. It can be formed of silicide or a laminate thereof.

<Configuration of second layer-TFT, etc.->
The second layer includes the TFT 30 and the relay electrode 719. The TFT 30 is, for example, L
It has a DD (Lightly Doped Drain) structure and includes a gate electrode 3a, a semiconductor layer 1a, and an insulating film 2 including a gate insulating film that insulates the gate electrode 3a from the semiconductor layer 1a. The gate electrode 3a is made of, for example, conductive polysilicon. The semiconductor layer 1a is made of, for example, polysilicon, and includes a channel region 1a ′, a low concentration source region 1b and a low concentration drain region 1c, and a high concentration source region 1d and a high concentration drain region 1e. In addition, TFT30 is L
Although it is preferable to have a DD structure, an offset structure in which impurities are not implanted into the low-concentration source region 1b and the low-concentration drain region 1c may be used. A self-aligned type in which a source region and a high concentration drain region are formed may be used. The relay electrode 719 is formed as the same film as the gate electrode 3a, for example.

The gate electrode 3a of the TFT 30 is a contact hole 12c formed in the base insulating film 12.
It is electrically connected to the scanning line 11a via v. The base insulating film 12 is made of, for example, a silicon oxide film, and is formed on the entire surface of the TFT array substrate 10 in addition to the interlayer insulating function between the first layer and the second layer. Has a function of preventing changes in the element characteristics of the TFT 30 caused by the above.

<Configuration of third layer-storage capacity, etc.->
The third layer is composed of a storage capacitor 70. The storage capacitor 70 has a configuration in which a capacitor electrode 300 and a lower electrode 71 are arranged to face each other with a dielectric layer interposed therebetween. Of these, the capacitive electrode 30
0 is electrically connected to the capacitor wiring 400. The lower electrode 71 is electrically connected to each of the high concentration drain region 1e of the TFT 30 and the pixel electrode 9a.

The lower electrode 71 and the high concentration drain region 1e are connected through a contact hole 83 opened in the first interlayer insulating film 41. Further, the lower electrode 71 and the pixel electrode 9a include contact holes 881, 882, and 804, a relay electrode 719, a second relay electrode 6a2, and a third electrode.
Each layer is relayed by the relay electrode 402 and electrically connected in the contact hole 89.

For example, conductive polysilicon is used for the capacitor electrode 300 and the lower electrode 71, and silicon oxide is used for the dielectric layer. The first interlayer insulating film 41 is formed of, for example, N
It is formed of SG (non-silicate glass). In addition, the first interlayer insulating film 41 includes PSG (phosphorus silicate glass), BSG (boron silicate glass), BPSG (
A silicate glass such as boron phosphorus silicate glass), silicon nitride, silicon oxide, or the like can be used.

In this case, as can be seen from the plan view of FIG. 2, the storage capacitor 70 is formed so as not to reach the pixel region substantially corresponding to the formation region of the pixel electrode 9a (so as to be within the light shielding region). Therefore, the pixel aperture ratio is kept relatively large.

<Fourth layer configuration-data lines, etc .->
The fourth layer is composed of data lines 6a. The data line 6a is formed as a three-layer film of aluminum, titanium nitride, and silicon nitride in order from the bottom. The silicon nitride layer is patterned to a slightly larger size so as to cover the lower aluminum layer and titanium nitride layer. In the fourth layer, the capacitor wiring relay layer 6a1 and the second relay electrode 6a2 are formed as the same film as the data line 6a. These are formed so as to be divided as shown in FIG.

Among these, the data line 6 a is electrically connected to the high-concentration source region 1 d of the TFT 30 through a contact hole 81 that penetrates the first interlayer insulating film 41 and the second interlayer insulating film 42.

The capacitor wiring relay layer 6a1 is electrically connected to the capacitor electrode 300 through the contact hole 801 formed in the second interlayer insulating film 42, and relays between the capacitor electrode 300 and the capacitor wiring 400. ing. As described above, the capacitor wiring relay layer 6a2 includes the first interlayer insulating film 41.
In addition, it is electrically connected to the relay electrode 719 through a contact hole 882 that penetrates the second interlayer insulating film 42. Such an interlayer insulating film 42 is, for example, NSG, PSG, BSG,
It can be formed of silicate glass such as BPSG, silicon nitride, silicon oxide or the like.

<Fifth layer configuration-capacity wiring, etc .->
The fifth layer is composed of the capacitor wiring 400 and the third relay electrode 402. Capacity wiring 4
00 is extended to the periphery of the image display area of the display panel, and is set to a fixed potential by being electrically connected to a constant potential source. As shown in FIG. 3, the capacitor wiring 400 has an X direction,
A notch is formed in a portion extending in the X direction and in a portion extending in the X direction so as to secure a formation region of the third relay electrode 402. In addition, the capacitor wiring 400 is formed wider than the structure of these circuit elements so as to cover the data line 6a, the scanning line 11a, the TFT 30, and the like in the lower layer. Thereby, each circuit element is shielded from light, and adverse effects such as reflection of incident light and blurring of pixel outlines in a projected image are prevented.

Further, the corner portion where the X-direction extending portion and the Y-direction extending portion of the capacitor wiring 400 just intersect each other has a shape such that a substantially triangular collar portion protrudes slightly. With this collar, TFT30
The light can be effectively shielded from the semiconductor layer 1a. That is, the light entering the semiconductor layer 1a from obliquely above is reflected or absorbed by the collar portion, thereby suppressing the occurrence of light leakage current in the TFT 30 and displaying a high-quality image free from flicker or the like. It becomes possible.

Such a capacitor wiring 400 has a contact hole 80 formed in the third interlayer insulating film 43.
3 is electrically connected to the capacitor-wiring relay layer 6a1.

In the fourth layer, the third relay electrode 402 is formed as the same film as the capacitor wiring 400. As described above, the third relay electrode 402 relays between the second relay electrode 6a2 and the pixel electrode 9a via the contact hole 804 and the contact hole 89. The capacitor wiring 400 and the third relay electrode 402 have a two-layer structure in which, for example, aluminum and titanium nitride are stacked.

A fourth interlayer insulating film 44 is formed on the entire surface of the fourth layer. In the fourth interlayer insulating film 44, a contact hole 8 for electrically connecting the pixel electrode 9a and the third relay electrode 402 is provided.
9 is opened.

<Pixel electrode>
The surface of the fourth interlayer insulating film 44 is flattened by, for example, CMP processing, and the pixel electrode 9a is disposed on each pixel region (FIG. 3). In the present embodiment, the convex portion 90 is similarly provided on the fourth interlayer insulating film 44. The detailed function and configuration of the convex portion 90 will be described later. The pixel electrode 9a is made of a transparent conductive material such as ITO (Indium Tin Oxide), and the convex portion 90 can be formed of an insulator such as silicon nitride or silicon oxide. Further, the pixel electrode 9 a and the convex portion 90 are covered with the alignment film 16.

<Configuration on counter substrate>
On the other hand, the counter substrate 20 is provided with a counter electrode 21 on the entire surface of the counter substrate, and further provided with an alignment film 22 thereon (under the counter electrode 21 in FIG. 4). The counter electrode 21
Like the pixel electrode 9a, it is made of a transparent conductive film such as an ITO film. A light-shielding film 23 is provided between the counter substrate 20 and the counter electrode 21 so as to cover at least a region facing the TFT 30 in order to prevent generation of light leakage current in the TFT 30.

A liquid crystal layer 50 is provided between the TFT array substrate 10 and the counter substrate 20 configured as described above. The liquid crystal layer 50 is formed by sealing liquid crystal in a space formed by sealing the peripheral portions of the substrates 10 and 20 with a sealing material. The liquid crystal layer 50 takes a predetermined alignment state by the alignment film 16 and the alignment film 22 that have been subjected to an alignment process such as a rubbing process in a state where an electric field is not applied between the pixel electrode 9 a and the counter electrode 21. It is like that.

  Next, characteristic portions of the liquid crystal device 1 will be described with reference to FIGS.

<Function and configuration of convex portion 90>
FIG. 5 is a plan view showing some components in the vicinity of the pixel electrode in the liquid crystal device 1 of the present embodiment, and FIG. 6 is an enlarged cross-sectional view taken along the line BB ′ shown in FIG. here,
The convex portion 90 is formed in a region F where the data line 6a and the scanning line 11a intersect each other among the inter-electrode regions on the data line 6a and the scanning line 11a extending between the pixel electrodes 9a on the TFT array substrate 10. . In the figure, one convex portion 90 is shown, but the convex portion 90 is formed in each of a plurality of regions F where the data line 6a and the scanning line 11a intersect each other. Accordingly, the convex portions 90 are formed at intervals from each other along the direction in which the data line 6a and the scanning line 11a extend. The inter-electrode region is a region between the pixel electrodes in the drawing on the TFT array substrate 10, and the region extending along the data line on the TFT array substrate 10 is an example of the “first region” in the present invention. A region that extends along the scanning line corresponds to an example of the “second region” in the present invention. Further, as shown in FIG. 6, the height of the convex portion 90 is set to be higher than the height of the pixel electrode 9 a so as not to contact the counter substrate 20. Thus, the pixel electrode 9a
In the alignment film 16 formed so as to cover the convex portion 90, a portion extending on the convex portion 90 projects to the counter substrate side as compared with a portion extending on the pixel electrode 9a which is a region around the convex portion 90. Yes.

Here, since the 1H inversion driving method is adopted as the driving method of the liquid crystal device 1 in the present embodiment, a horizontal electric field is generated between the pixel electrodes 9a with the convex portions 90 interposed. That is, during the image display period of the nth (where n is a natural number) field or frame, a voltage having a polarity different from that of the reference voltage is applied to each row of the pixel electrodes 9a arranged in parallel in the Y-axis direction. Thus, the pixel region is driven in a state where a liquid crystal driving voltage having a reverse polarity is applied to each row.
This is shown in FIG. In the subsequent image display period of the (n + 1) th field or frame, the polarity of the liquid crystal driving voltage is inverted as shown in FIG. After the n + 2nd field or frame, the states shown in FIGS. 7A and 7B are periodically repeated. When the polarity of the voltage applied to the liquid crystal layer 50 is periodically reversed in this way, application of a DC voltage to the liquid crystal is prevented, and deterioration of the liquid crystal is suppressed. Further, since the polarity of the applied voltage is reversed for each row of the pixel electrodes 9a, crosstalk and flicker are reduced.

With this method, the pixel electrodes 9a adjacent to each other in the Y-axis direction (that is, belonging to different rows) are driven with potentials having opposite polarities with respect to the reference voltage. An electric field having a component parallel to the substrate surface is generated. That is, the convex part 90 is the region C1.
It is provided in the area corresponding to. In addition, a horizontal electric field is also generated between the pixel electrodes 9a belonging to different columns among the pixel electrodes 9a in adjacent rows. Therefore, when the liquid crystal device 1 is in operation,
A lateral electric field is generated in the entire region along the region where the scanning line 11a indicated by C1 in the drawing extends. As will be described later, a portion of the alignment film 16 that protrudes toward the counter substrate 20 reduces the influence of a lateral electric field applied to the liquid crystal molecules. If the convex portion 90 is made of a material having a lower magnetic permeability than the liquid crystal material, the lateral electric field is reduced in the vicinity of the convex portion 90 by the amount that the liquid crystal is replaced by the convex portion 90.

FIG. 8 shows a distribution state of the lines of electric force in the vicinity of the region C1 during driving by a cross section taken along line BB ′ of FIG. That is, the arrows in the figure indicate the direction of the lines of electric force, the distribution density does not necessarily correspond to the electric field strength, and the length does not indicate the electric field strength. Here, the convex portion 90 is disposed in the region C1, and the convex portion 90 is formed between the edge portions 9a1 and 9a2 of the pixel electrode 9a. For this reason, the distance between the edge portions 9a1 and 9a2 of the pixel electrode is expanded from the distance d2 when viewed in plan, according to the height d1 of the convex portion 90. In this way, the intensity of the transverse electric field is reduced by the amount obtained by increasing the distance in the direction perpendicular to the substrate surface.

In addition, the height of the convex portion 90 is set low enough to prevent the rubbing unevenness of the alignment film 16 from occurring, as will be described later. More specifically, the height of the protrusion 90 is higher than the height of the pixel electrode 9a, and is preferably about 0.4 μm, for example. According to the convex portion 90 having such a height, the alignment film formed on the convex portion 90 can be gently formed so as to weaken the lateral electric field. Further, since the convex portion 90 is not in contact with the counter substrate 20, the liquid crystal layer 50 can be sandwiched between the substrates, and the alignment control of these liquid crystals can be executed while weakening the influence of the lateral electric field.

That is, the convex portion 90 does not function as a columnar spacer for making the distance between the TFT array substrate 10 and the counter substrate 20 uniform in the image display region, but weakens the lateral electric field applied to the liquid crystal layer 50, This is clearly different from the columnar spacer disclosed in the prior art in that it functions to reduce the rubbing unevenness of the alignment film 16 to a level where there is no problem in practical use.

FIG. 9 shows the configuration of the pixel electrode and the distribution of the lines of electric force at the time of 1H inversion driving in correspondence with FIG. 8 in the comparative example of this embodiment. Also in this figure, the arrows in the figure represent the direction of the lines of electric force, the distribution density does not necessarily correspond to the electric field strength, and the length does not represent the electric field strength. In the comparative example, the pixel electrodes 191 and 192 driven with different polarities.
Are formed on the same plane with an interelectrode distance d3. Pixel electrodes 191, 19
2 is flat to the edge, and the alignment film 116 covers it. In this case, the lateral electric field is generated between the pixel electrode 191 and the pixel electrode 192 in a planar shape. On the other hand, in the present embodiment shown in FIG. 8, the lateral electric field can be weakened without increasing the interval between the pixel electrodes on the plane. On the contrary, if the intensity of the lateral electric field is set to the same level as in the comparative example, the distance d2 can be shortened, and the pitch of the pixels can be reduced and the aperture ratio of the pixels can be improved.

In the comparative example, since the horizontal electric field spreads on the surfaces of the pixel electrodes 191 and 192, the alignment of the liquid crystal is disturbed even in the region 120 deviated from the light shielding film 123 when seen in a plan view. Region 120
Transmits light, so that only the end corresponding to the region 120 of the pixel appears white and causes light leakage.

On the other hand, in the present embodiment shown in FIG. 8, the convex portion 90, the edge portion 9a1, and the edge portion 9 are provided.
The horizontal electric field is generated with an inclination with respect to the substrate surface of the TFT array substrate 10 because of the difference in height from the position a2. Therefore, the area affected by the lateral electric field viewed in plan in the liquid crystal layer 50 can be made narrower than in the comparative example. That is, the region where the liquid crystal is poorly aligned is defined as the light shielding film 2.
3 can be made a narrower region, and the possibility of light leakage as in the comparative example can be avoided.

<Orientation treatment>
Here, in order to alleviate the adverse effect of the transverse electric field on the liquid crystal layer 50, not only the intensity of the transverse electric field is reduced or the longitudinal electric field is strengthened as described above, but also the liquid crystal alignment regulating force by the alignment film 16 is considered. . The alignment film 16 has been subjected to a rubbing process along the Y direction shown in FIG.

Here, as shown in FIG. 5, the convex portion 90 is provided in a region F where the data line 6a and the scanning line 11a intersect each other, and the convex portion is provided in a line shape along the data line or the scanning line. Compared to the case, rubbing unevenness can be minimized. More specifically,
Compared with the case where a convex portion is provided in the entire region on the scanning line 11a in the drawing so as to reduce the horizontal electric field generated between the pixel electrodes 9a in each row, the portion protruding to the counter substrate 20 side according to the convex portion can be reduced. This can reduce the portion of the alignment film that contacts the surface of the rubbing roller non-uniformly.
Can be rubbed uniformly.

As shown in FIG. 8, the alignment film 16 in the region C <b> 13 has the region 1 corresponding to the protrusion 90.
Although the orientation is weaker than 2 and 14, the liquid crystal in the region C13 is a region C1 in which the alignment directions are aligned.
2, the interaction between the liquid crystal of C14, that is, the intermolecular force, etc., these regions C12,
The alignment is aligned in the same direction as the C14 liquid crystal. As a result, the liquid crystal can be kept in a uniform and excellent alignment state from the region C12 to the region C14, and the occurrence of light leakage between the pixel electrodes 9a can be suppressed.

Therefore, in the liquid crystal device 1, it is possible to limit to the local areas C12 and C13 where the lateral electric field acts, and to eliminate the influence of the lateral electric field in the areas C12 and C13 as much as possible. According to this, since the portion where the alignment process of the alignment film 16 is performed nonuniformly can be reduced as much as possible due to the presence of the convex portion 90, the influence of the nonuniformity on the alignment of the liquid crystal is greatly suppressed. As a result, good image quality can be maintained more effectively, which is advantageous for reducing the width of the light-shielding film 23 to increase the aperture ratio of the pixel and to reduce the pixel pitch. Become.

Here, it is possible to reduce the lateral electric field more effectively by optimizing the cross-sectional shape of the convex portion 90. For example, as shown in FIG. 15A, even if the cross-sectional shape of the convex portion is rectangular, the effect of reducing the transverse electric field can be obtained. Further, as shown in FIG. 15B, the upper surface of the convex portion 90 may be a curved surface, or as shown in FIG. 15C, the sectional shape of the convex portion 90 is a tapered shape that tapers upward. May be. Moreover, as shown in FIG.15 (d), the shape where the side surface of the convex part 90 has curved toward the inner side of the convex part 90 may be sufficient, and it is semicircle shape as shown in FIG.15 (e). There may be. The cross-sectional shape of the convex part 90 should just be set so that a horizontal electric field may be reduced according to the kind of liquid crystal molecule used, and the arrangement | sequence and shape of a pixel electrode.
For example, when the cross-sectional shape of the convex part 90 is a taper shape, the level | step difference of the alignment film 16 in the side surfaces 91 and 92 is gentle, and the possibility that the rubbing process of the side surface 91 may become insufficient is also eased. As the inclination of the side surfaces 91 and 92 is gentler, the liquid crystal in the vicinity of the side surfaces 91 and 92 is less likely to be disordered because the operation is not spatially restricted. In addition, the pixel electrode 9a and the counter electrode 21
Therefore, the operation state of the liquid crystal corresponding to this interval changes asymptotically, and the difference in the degree of light modulation is not noticeable. Therefore, it is possible to reduce the occurrence of light leakage in the region between the pixel electrodes, that is, in the vicinity of the boundary of the pixel region.

As described above, in the liquid crystal device 1 of the present embodiment, the lateral electric field is effectively reduced, and the range viewed in plan is narrowed, so that the influence of the lateral electric field on the liquid crystal layer 50 in each pixel region is comprehensive. To be relaxed. Therefore, it is possible to prevent a decrease in contrast ratio due to light leakage,
A decrease in luminance can be avoided.

Next, various modifications of the convex portion in the liquid crystal device 1 of the present embodiment will be described. In each of the drawings referred to in the following description, the pixel electrode is shown in a rectangular state for the sake of simplicity, and FIGS.
The same reference numerals are assigned to the parts common to the above. Further, it goes without saying that each example of the cross-sectional shape of the convex portion shown in FIG. 15 can be applied to the following convex portion.

(Modification 1)
An example of the convex portion 190 applied to the liquid crystal device 1 will be described with reference to FIGS. 10 and 11. FIG. 10 is a plan view showing a specific arrangement and shape of the protrusion 190 of this example, and FIG. 11 is a cross-sectional view taken along the line CC ′ in FIG. FIG. 10 is a plan view corresponding to FIG. 5, and the pixel electrode 9a has a rectangular shape for ease of explanation.

In FIG. 10, the convex portion 190 is formed so as to overlap the corner portion of the pixel electrode facing each other through the intersection region F. Further, as shown in FIG. 11, the edge portion 9a of the pixel electrode.
Each of 1 and 9a2 is formed to ride on the upper surface of the convex portion 190.

Therefore, according to the convex portion 190 of this example, the lateral electric field acting between the edge portions 9a1 and 9a2 of the pixel electrode 9a can be reduced. In addition, the lateral electric field can be effectively reduced by the vertical electric field generated between the counter electrode 21 provided on the counter substrate 20 and the pixel electrode. More specifically, as compared with the case where the pixel electrode is formed flat along the substrate surface of the TFT array substrate 10, the pixel electrode 9a is as much as the edges 9a1 and 9a2 of the pixel electrode 9a run on the convex portion 190. And the counter electrode 21
Can be narrowed, and the vertical electric field can be strengthened. Therefore, the influence of the horizontal electric field applied to the liquid crystal by this vertical electric field can be relatively weakened.

(Modification 2)
FIG. 12 is a plan view showing a specific arrangement and shape of the protrusions 290 of this example. It is the top view which showed the principal part of the liquid crystal device 1 of this example.

In FIG. 12, the liquid crystal device 1 of the present example has a convex portion 290 formed in the intersecting region F. The planar shape of the convex part 290 is a rhombus having vertices in the X direction and the Y direction in the drawing. The convex part 290 overlaps the corner part of the pixel electrode 9 a provided on the periphery of the intersecting region F, and the corner part of the pixel electrode 9 a rides on the upper surface of the convex part 290.

Such a convex portion 290 can also reduce the influence of the horizontal electric field relatively by the vertical electric field while reducing the horizontal electric field similar to the above-described convex portion. In addition, rubbing unevenness can be reduced.

(Modification 3)
FIG. 13 is a plan view showing a main part of the liquid crystal device 1 of the present example, and is a plan view showing a specific arrangement and shape of the protrusions 390.

In FIG. 13, the convex portion 390 formed in the intersection region F extends from the intersection region F along the X direction in the drawing. More specifically, the convex portion 390 extends from the intersecting region F along a side extending along the X direction among the sides of the pixel electrode 9a facing each other through the intersecting region F. The pixel electrode 9 a that overlaps the convex portion 390 runs on the upper surface of the convex portion in a region that overlaps the convex portion 390.

Therefore, not only the lateral electric field acting between the corner portions of the pixel electrode 9a but also the lateral electric field acting between the sides of the pixel electrode can be effectively reduced. As described above, the planar shape of the convex portion applicable to the liquid crystal device 1 of the present embodiment can be formed into a convenient shape according to the driving method and structure of the electro-optical device and other design specifications. The planar shape may be circular.

(Modification 4)
FIG. 14 is a main part cross-sectional view showing the main part of the liquid crystal device 1 of the present example, and corresponds to the cross-sectional view taken along the line BB ′ of FIG.

The liquid crystal device 1 of this example is characterized in that it has a convex part 80 that is an example of the “second convex part” of the present invention and a convex part 90 formed on the TFT array substrate 10.

The convex portions 80 are provided on the substrate surface of the counter substrate 20 facing the TFT array substrate 10, and are arranged at a distance from each other so as to face the convex portion 90.

The counter electrode 22 formed on the counter substrate 20 is formed so as to cover the convex portion 80, and the portion formed on the convex portion 90 faces the convex portion 90 as compared with the portion extending around the convex portion 80. Overhangs.

According to the convex part 80, the space | interval of the pixel electrode 9a and the counter electrode 21 can be narrowed compared with the case where the convex part 90 is formed only in the TFT array substrate 10. Therefore, the vertical electric field acting between the pixel electrode 9a and the counter electrode 21 can be strengthened, and the horizontal electric field can be relatively weakened by this vertical electric field. Thereby, it is possible to reduce light leakage generated between the electrodes, that is, between the pixel electrodes, and the display characteristics of the liquid crystal device 1 can be improved.

Note that the above-described effects can be obtained even if the convex portion 90 is not provided on the TFT array substrate 10 but only the convex portion 80 is provided on the counter substrate 20.

(Modification 5)
Next, in FIG. 21, a convex portion 190a which is an example of the “first convex portion” of the present invention extends along the direction in which each of the data line 6a and the scanning line 11a extends, and the planar shape thereof is a cross shape. It is. The edge of the pixel electrode 9a partially rides on the convex portion 190a. Convex part 190a
According to the above, it is possible to reduce the nonuniformity of the horizontal electric field at the edges of the pixel electrode 9a and to stabilize the alignment control of the liquid crystal, and light leakage occurs at the edges and corners of the pixel electrode 9a. The display performance of the liquid crystal device 1 can be improved.

(Modification 6)
Next, as shown in FIG. 22, the shape of the convex portion 190 b may be asymmetric about the intersecting region F along one direction in the substrate surface of the TFT array substrate 10. Convex part 190b
Has an asymmetric shape along the rubbing direction when the alignment film 16 formed on the TFT array substrate 10 is rubbed, for example. According to the convex portion 190b, since the alignment film 16 is formed on the convex portion 190b, it is possible to reduce the rubbing failure caused by the rubbing roller being caught by the step portion of the alignment film 16 formed on the convex portion 190b. is there. Convex part 190b
May be formed so that the unevenness of the alignment film generated according to the level difference of the protrusion 190b is not caught on the rubbing roller, and the planar shape or the sectional shape, or both the planar shape and the sectional shape may be It may be formed asymmetrically along the rubbing direction around F.

In addition, according to the convex portion 190b, the non-uniformity of the electric field strength distribution of the horizontal electric field generated in the region between the pixel electrodes 9a can be reduced, and light leakage generated in the region where the edge portion or corner portion of the pixel electrode 9a is located. The image quality can be reduced and the image quality can be improved.

(Modification 7)
In FIG. 23, the convex portion 190 c may be disposed with a space from the corner portion of the pixel electrode 9 a in the light shielding region where the light shielding film 23 overlaps the intersecting region F. Convex part 190
According to c, the non-uniformity of the electric field strength in the region between the pixel electrodes 9a can be reduced, and the liquid crystal device 1
Display performance can be improved.

(Modification 8)
In FIG. 24, the pixel electrode 9a partially rides on the pixel electrode 9a on the convex portion 190d, and the planar shape of the convex portion 190d is circular. According to the convex portion 190d, the pixel electrode 9a
Since the edge portion and the corner portion can be made higher than the position of the other portion of the pixel electrode 9a, the distance between the counter electrode and the pixel electrode can be partially reduced. In particular, it is a cause of poor alignment of the liquid crystal by reducing the distance between the counter electrode and the pixel electrode at the edge and corner of the pixel electrode, which is a region where the change in the electric field strength distribution is relatively larger than other regions. The non-uniformity of the electric field strength distribution can be reduced, and the display performance of the liquid crystal device 1 can be improved.

In addition, as shown in FIG. 25, the convex part 190e may be arrange | positioned only in the area | region inside the light shielding film 23 so that it may overlap with the light shielding film 23 in the cross | intersection area | region F. In particular, since the planar shape of the convex portion 190e is circular, the alignment film 16 formed on the convex portion 190e with the intersection region F as the center extends isotropically around the convex portion 190e. Therefore, the convex portion 19
The nonuniformity of the electric field strength generated between the pixel electrodes 9a can be reduced according to the respective potentials of the four pixel electrodes 9a arranged around 0e.

(Modification 9)
In FIG. 26, the convex portion 190f is formed on the substrate surface of the TFT array substrate 10,
The convex portion 180 f as an example of the “second convex portion” of the present invention is formed on the substrate surface of the counter substrate 20. Each of the convex portions 190 f and 180 f partially overlaps the light shielding film 23 and is arranged so as to be shifted from the light shielding film 23.

According to the convex portions 190f and 180f, the nonuniformity of the electric field strength distribution of the horizontal electric field between the pixel electrode 9a and the counter electrode 21 is suppressed to a greater or lesser extent. More specifically, for example, the concentration of the electric field strength occurring at the edge of the pixel electrode 9a or the corner portion of the pixel electrode 9a can be reduced. Instability can be eliminated. Therefore, according to this aspect, it is possible to suppress deterioration in image quality caused by alignment failure and alignment instability.

(Modification 10)
In FIG. 27, the shapes of the convex portions 190g and 180g may be different from each other. More specifically, for example, the cross-sectional shapes of the protrusions 190g and 180g are different from each other along the left-right direction in the drawing with the center of the intersecting region F as a reference. In particular, in this example, the convex portion 19
At 0 g, the side surface on the side where the rubbing roller faces the convex portion 190 g along the rubbing direction A1 of the alignment film 16 has a steeper angle with respect to the substrate surface of the TFT array substrate 10 than the other side surface. ing. Similarly, the convex portion 180g has a side surface on the side where the rubbing roller faces the convex portion 180g along the rubbing direction A2 of the alignment film 22 as compared to the other side surface.
It has a steep angle with respect to the 0 substrate surface. Thereby, the electric field strength distribution between the convex portions 190g and 180g is made uniform. According to the convex portions 190g and 180g, the non-uniformity of both the electric field strength between the pixel electrode and the counter electrode and the lateral electric field generated between the pixel electrodes can be reduced, and the non-uniformity of the electric field strength distribution and the type of liquid crystal (or , The light leakage caused by the orientation mode) can be reduced accordingly. The shapes and sizes of the protrusions 190f and 180f may be different from each other, and may be set conveniently according to the type of liquid crystal and the liquid crystal orientation control method.

In addition, since the cross-sectional shape of the convex portion 190g or 180g is steeper on the upstream side in the rubbing direction and is gentle on the downstream side, the uneven rubbing at the convex portion can be reduced. In other words, the surface on the downstream side of the rubbing in the convex portion (the surface with the gentler slope of the cross section in this modification) is a surface that becomes a shadow of the convex portion if the rubbing roller is used. If the cross section of the portion is symmetric with respect to the rubbing direction, the rubbing roller is less likely to come into contact with the surface on the downstream side, and alignment failure is likely to occur compared to the upstream side. On the other hand, in this modification, the rubbing roller is easy to come into contact with the downstream surface as well because the downstream surface has a gentler slope than the upstream surface. Thus, it is possible to reduce the above-mentioned alignment failure.

(Manufacturing method of liquid crystal device)
A manufacturing process of the liquid crystal device configured as described above will be described with reference to FIGS. 16 and 17 with a focus on the steps related to the protrusion 90 and the pixel electrode 9a. 16 and 17 are process diagrams showing a cross section taken along the line BB 'of FIG. Needless to say, the protrusions and pixel electrodes in the various modifications described above can also be formed using a method similar to the method described below.

First, in FIG. 16A, a TFT array substrate 10 such as a quartz substrate, a hard glass, or a silicon substrate is prepared, and a conductive film constituting a circuit element is formed on the first layer to the fifth layer using a planar technique. The layers are stacked in order. Specifically, the scanning line 11a, the TFT 30, the storage capacitor 70, the data line 6a, the capacitor wiring 400, the relay electrode, and the like are formed by a conductive film or semiconductor film deposition process, a doping process, a patterning process, an annealing process, or the like. . The base insulating film 12 is provided between the first layer and the second layer, the first interlayer insulating film 41 is provided between the second layer and the third layer, the second interlayer insulating film 42 is provided between the third layer and the fourth layer, and the fourth layer. A third interlayer insulating film 43 is formed between the layer and the fifth layer, and a fourth interlayer insulating film 44 is formed on the fifth layer.

The fourth interlayer insulating film 44 is usually made of, for example, TEOS (tetraethylorthosilicate) gas, TEB (tetraethylboatrate) gas, TMOP (tetramethyloxyphosphate) gas, or the like. NSG (non-silicate glass), PSG (phosphorus silicate glass), BSG by pressure or reduced pressure CVD (Chemical Vapor Deposition) method
It is formed as a silicate glass film such as (boron silicate glass) or BPSG (boron phosphorus silicate glass), or a silicon nitride film or a silicon oxide film. At this time, the film thickness of the fourth interlayer insulating film 44 is, for example, about 500 to 2000 μm. In this film formation stage, irregularities exist on the surface of the fourth interlayer insulating film 44 due to the influence of various circuit elements in the lower layer. Therefore, the surface of the fourth interlayer insulating film 44 is planarized by CMP processing. Specifically, for example, the surface of the substrate fixed to the spindle (that is, the fourth interlayer insulating film 44) while flowing a liquid slurry (chemical polishing liquid) containing silica particles on a polishing pad fixed on the polishing plate. Surface)
Is polished by rotating contact. Then, the polishing process is stopped by time management or by forming an appropriate stopper layer at a predetermined position. Thus, the fourth interlayer insulating film 44
Is a planarizing film having a thickness of about 300 to 1500 μm, for example.

As a result, on the TFT array substrate 10, a laminated structure of the fourth interlayer insulating film 44 and below is constructed.

Next, in FIG. 16B, a convex portion 90 is formed on the flat surface of the fourth interlayer insulating film 44. Specifically, for example, an insulating film 441 is formed using the same material as the fourth interlayer insulating film 44,
A photoresist film is formed in the formation region of the convex portion 90 thereon, and the insulating film is etched using this as a mask. Such an insulating film is formed by the same material and method as the fourth interlayer insulating film 44. At that time, wet etching is used to pattern the insulating film. In addition, the convex part 90 can be formed in the patterned insulating film also by dry etching. At this time, by providing a taper on the resist itself so as to transfer the shape of the resist, or by performing etching while retreating the resist using an etching gas to which oxygen is added, the convex portions 90 are formed.
It is possible to make the cross-sectional shape into a tapered shape.

Before and after this step, a contact hole 89 extending from the surface of the fourth interlayer insulating film 44 to the third relay electrode 402 is formed by dry etching such as reactive ion etching or reactive ion beam etching. However, the contact hole 89 may be formed so as to have a slight taper by wet etching or a combination of dry etching and wet etching.

Next, in FIG. 16C, the pixel electrode 9a is formed. First, a transparent conductive film such as an ITO film is deposited on the fourth interlayer insulating film 44 to a thickness of about 50 to 200 nm by sputtering or the like. Then, the pixel electrode 9a is formed by photolithography and etching. At this time, the pixel electrode 9a is formed so as to avoid the convex portion 90, whereby the pixel electrode 9a is formed in each of the pixel regions avoiding the intersecting region F. Here, the edge of the pixel electrode 9a is the protrusion 9
Of course, it may be formed so as to run on the upper surface of 0. When the liquid crystal device is used as a reflection type, the pixel electrode 9a may be formed using an opaque material having a high reflectance such as aluminum.

Next, in FIG. 16 (d), a polyimide alignment film coating solution is applied to the entire surface of the TFT array substrate 10 on which the pixel electrodes 9a are formed, and a film is formed on the surface. Arrow R
The alignment film 16 is completed by performing a rubbing process in the direction indicated by. The rubbing process
This technique is widely used among the alignment processes, and by using this technique, it can be manufactured relatively easily and the production efficiency of the liquid crystal device can be maintained. Here, the convex portion 9
Since 0 is formed in each of the intersecting regions F, even when the alignment film 16 protruding upward according to the shape of the convex portion 90 is rubbed with a rubbing cloth wound around a rubbing roller, the rubbing unevenness can be reduced, and the alignment A sufficient alignment regulating force of the film 16 is ensured.

On the other hand, for the counter substrate 20, for example, a glass substrate is prepared, and a frame-shaped light shielding film 23 is formed on one surface thereof. The light shielding film 23 is formed by sputtering metal chromium or the like, for example. Thereafter, a transparent conductive film such as ITO is formed on the entire surface of the counter substrate 20 by sputtering or the like.
The counter electrode 21 is formed by depositing to a thickness of ˜200 nm. Furthermore, the counter electrode 2
A polyimide alignment film 22 is formed on the entire surface of 1. At this time, T on the counter substrate 20
When forming the convex portion 80 on the surface facing the FT array substrate 10, the convex portion 80 is formed by the same process as the step of forming the convex portion 90 together with or in place of the light shielding film 23. It is also possible to leave.

The convex portion 80 may be formed using a transparent conductive film that forms the counter electrode 21.

For example, by etching a region other than the portion corresponding to the convex portion 80 with respect to the transparent conductive film, a convex shape may be formed as the convex portion 80, or the transparent conductive film deposited on the entire surface of the counter substrate. It is also possible to form the convex portion 80 by locally applying a transparent conductive film on the film by an inkjet method or the like to form a convex shape.

Subsequently, the TFT array substrate 10 on which the electrodes and the like are formed and the counter substrate 20 are assembled with the electrode formation surfaces facing each other. At that time, the peripheral portions of the TFT array substrate 10 and the counter substrate 20 are sealed with a sealing material, and liquid crystal is injected into a sealed space between them to form a liquid crystal layer 50. As the liquid crystal, for example, a mixture of a plurality of types of nematic liquid crystals is used. Thus, the liquid crystal device of this embodiment is completed.

As described above, according to the liquid crystal device of the present embodiment, the convex portion 90 is provided in the intersecting region where the data line 6a and the scanning line 11a intersect in the interelectrode region that is the gap between the pixel electrodes 9a that generates the horizontal electric field. The strength of the transverse electric field is reduced.

With the above operation, in this liquid crystal device, the lateral electric field generated during driving is substantially reduced and the influence on the liquid crystal is mitigated, so that the liquid crystal alignment defect in the liquid crystal layer 50 is largely eliminated. As a result, light leakage can be prevented, light leakage can be prevented more reliably than before, and display can be performed without lowering the contrast ratio.

Next, another example of the method for manufacturing the electro-optical device according to the present embodiment will be described with reference to FIG. The method of manufacturing the electro-optical device according to this example is characterized in that after forming a plurality of pixel electrodes, the convex portions 90 can be accurately attached between the pixel electrodes.

In FIG. 17A, the pixel electrode 9 a is formed on the fourth interlayer insulating film 44. Pixel electrode 9
a is formed using the same method as the process shown in FIG.

Next, as shown in FIG. 17B, a coating material 99 such as an organic material is applied from the upper side in the drawing by using, for example, an ink jet method. As a result, as shown in FIG.
A convex portion 90 higher than the height a can be formed in the inter-electrode region. The ink jet method has an advantage that the projection 90 can be accurately attached between the pixel electrodes 9a even when the pixel electrodes 9a are previously formed, because the coating material can be accurately applied to a narrow region.

Next, as shown in FIG. 17D, the alignment film 16 covers the pixel electrode 9 a and the convex portion 90.
After the alignment film 16 is rubbed, the TFT array substrate 1 is subjected to the following process.
The liquid crystal device 1 is completed by laminating 0 and the counter substrate 20.

According to the manufacturing method of the electro-optical device of this example, since the convex portion 90 can be formed in the inter-electrode region after the pixel electrode 9a is formed, the convex portion 90 can be formed according to the arrangement of the pixel electrodes. It is also possible to form the convex portion 90 so as to avoid the contact hole formed previously.

(Overall configuration of electro-optical device)
The overall configuration of the liquid crystal device according to the above-described embodiments and modifications will be described with reference to FIGS. 19 and 20. 18 is a plan view of the TFT array substrate 10 as viewed from the counter substrate 20 side together with the components formed thereon, and FIG. 19 is a cross-sectional view taken along the line HH ′ of FIG.

In FIG. 18, a sealing material 52 is provided on the TFT array substrate 10 along the periphery thereof, and a frame-shaped light shielding film 53 that defines the periphery of the image display region 10a is provided on the inner side. In a region outside the sealing material 52, a data line driving circuit 101 and an external circuit connection terminal 102 for driving the data line 6a by supplying an image signal to the data line 6a at a predetermined timing along one side of the TFT array substrate 10. Is provided. A scanning line driving circuit 104 that drives the scanning line 3a by supplying a scanning signal to the scanning line 3a at a predetermined timing is provided along two sides adjacent to the one side. If the delay of the scanning signal supplied to the scanning line 3a is not a problem, the scanning line driving circuit 104 may be provided only on one side. Conversely, the data line driving circuit 101 is arranged on both sides of the image display area 10a. Also good. Further, a plurality of wirings 105 for connecting the scanning line driving circuits 104 are provided on the remaining side of the TFT array substrate 10. In addition, at least one corner of the counter substrate 20 has a TFT
A conductive material 106 that electrically connects the array substrate 10 and the counter substrate 20 is provided. As shown in FIG. 19, the counter substrate 20 having substantially the same contour as the sealing material 52 shown in FIG. 18 is fixed to the TFT array substrate 10 by the sealing material 52.

The data line driving circuit 101 and the scanning line driving circuit 1 are provided on the TFT array substrate 10.
In addition to 04 and the like, a sampling circuit that applies image signals to the plurality of data lines 6a at a predetermined timing, and a precharge circuit that supplies precharge signals of a predetermined voltage level to the plurality of data lines 6a prior to the image signals, respectively. In addition, an inspection circuit or the like for inspecting the quality, defects, or the like of the electro-optical device during manufacturing or at the time of shipment may be formed.

Further, for example, a TN (Twisted Nematic) mode and an STN (Super Twisted Nematic) mode are provided on the counter substrate 20 side where the projection light is incident and the TFT array substrate 10 side where the emitted light is emitted, respectively.
Mode, VA (Vertically Aligned) mode, PDLC (Polymer Dispersed Liquid Crys)
tal) mode or the like, or a normally white mode / normally black mode, a polarizing film, a retardation film, a polarizing plate, and the like are arranged in a predetermined direction.

The liquid crystal device described above is applied to, for example, a projector. In that case, three liquid crystal devices are used as light valves for the three primary colors of RGB, and each light valve is configured to project each color light separated through a dichroic mirror for RGB color separation. Further, the liquid crystal device described above can be applied to a direct-view type or reflective type color display device other than the projector. In that case, an RGB color filter may be formed together with the protective film in a region facing the pixel electrode 9 a on the counter substrate 20. Or TFT
It is also possible to form a color filter layer with a color resist or the like under the pixel electrodes 9 a facing RGB on the array substrate 10. Further, in this aspect, if one microlens corresponding to one pixel is formed on the counter substrate 20, the light collection efficiency of incident light is improved, so that the display luminance can be improved. Furthermore, a dichroic filter that creates RGB colors by using interference of light may be formed by depositing multiple layers of interference layers having different refractive indexes on the counter substrate 20. According to this counter substrate with a dichroic filter, brighter display is possible.

In the above description, the data line driving circuit 101 and the scanning line driving circuit 104 are TF.
Instead of being provided on the T array substrate 10, for example, TAB (Tape Automat)
ed bonding) the driving LSI mounted on the substrate may be electrically and mechanically connected via an anisotropic conductive film provided on the periphery of the TFT array substrate 10.

In the above-described embodiment of the present invention, the liquid crystal device has been described as an example. However, the liquid crystal device to which the present invention can be applied includes a reflective liquid crystal device (LCOS) using a semiconductor substrate.

In addition, a SED (Surf) which is a display using a plasma display or an electron-emitting device.
Even in an electro-optical device such as an ace-conduction electron-emitter display, the present invention can be applied for the purpose of alleviating the influence of an electric field generated between adjacent pixels.

(Electronics)
Next, a case where the liquid crystal device described in detail above is applied to an electronic device will be described.

Here, a projector using the liquid crystal device as the electro-optical device as a light valve will be described. FIG. 20 is a plan view showing a configuration example of the projector. As shown in this figure, a lamp unit 1102 including a white light source such as a halogen lamp is provided inside the projector 1100. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide, and liquid crystal as a light valve corresponding to each primary color. Incident to devices 100R, 100B, and 100G. Liquid crystal device 100R, 100B
And 100G are the same as those of the liquid crystal device described above, and R, G, and B primary color signals supplied from the image signal processing circuit are modulated. Light modulated by these liquid crystal devices is incident on the dichroic prism 1112 from three directions. In the dichroic prism 1112, R and B light is refracted at 90 degrees, while G light goes straight. As a result, the images of the respective colors are combined, and a color image is projected onto the screen 1120 and the like via the projection lens 1114.

In the above, a liquid crystal device has been described as a specific example of the electro-optical device of the present invention. However, the electro-optical device of the present invention also uses an electrophoretic device such as electronic paper or an electron-emitting device. Display (Field Emission Display and Surface-Conduction Electron-Emitter
Display) or the like. In addition, such an electro-optical device of the present invention includes:
In addition to the projectors described above, television receivers, viewfinder type or monitor direct-view type video tape recorders, car navigation devices, pagers, electronic notebooks, calculators, word processors, workstations, videophones, POS terminals The present invention can be applied to various electronic devices such as a device provided with a touch panel.

The present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification, and an electro-optical device with such a change, In addition, the manufacturing method thereof and an electronic apparatus including such an electro-optical device are also included in the technical scope of the present invention.

1 is an equivalent circuit diagram illustrating a configuration of a liquid crystal device according to an embodiment of the present invention. FIG. 2 is a partial plan view illustrating a specific configuration of the liquid crystal device illustrated in FIG. 1. FIG. 2 is a partial plan view illustrating a specific configuration of the liquid crystal device illustrated in FIG. 1. It is AA 'sectional drawing of FIG.2 and FIG.3. FIG. 2 is a partial plan view illustrating an extracted main part of the liquid crystal device illustrated in FIG. 1. It is BB 'sectional drawing of FIG. It is a figure for demonstrating the operation state in the 1H inversion drive system of the liquid crystal device in this embodiment. It is a figure for demonstrating the effect | action of the convex part in the edge part of the pixel electrode shown in FIG. It is a figure showing the electric field distribution in the comparative example of the edge part of the pixel electrode shown in FIG. FIG. 10 is a partial plan view showing an extracted main part of a liquid crystal device in Modification 1. It is CC 'sectional drawing of FIG. FIG. 10 is a partial plan view showing an extracted main part of a liquid crystal device in Modification 2. FIG. 10 is a partial plan view showing an extracted main part of a liquid crystal device according to Modification 3. FIG. 10 is a partial cross-sectional view illustrating an extracted main part of a liquid crystal device according to Modification 4. 3 is a schematic cross-sectional view of a convex portion 90. FIG. It is process drawing which shows an example of the manufacturing method of the liquid crystal device of this embodiment. It is process drawing which shows the other example of the manufacturing method of the liquid crystal device of this embodiment. It is a top view showing the whole structure of the liquid crystal device in this embodiment. It is HH 'sectional drawing of FIG. It is sectional drawing showing the structure of the liquid crystal projector which concerns on one Embodiment of the electronic device of this invention. FIG. 10 is a partial plan view showing an extracted main part of a liquid crystal device in Modification 5. FIG. 10 is a partial plan view illustrating a main part of a liquid crystal device in Modification 6 extracted. FIG. 16 is a partial plan view illustrating a main part of a liquid crystal device in modification example 7 extracted. FIG. 10 is a partial plan view (part 1) of an extracted main part of a liquid crystal device in a modification example 8; FIG. 16 is a partial plan view (No. 2) showing an extracted main part of a liquid crystal device in Modification 8. It is a partial top view which extracts and represents the principal part of the liquid crystal device in the modification 9. FIG. 22 is a partial plan view illustrating a main part of a liquid crystal device according to Modification Example 10 extracted.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Liquid crystal device, 10 ... TFT array substrate, 20 ... Counter substrate, 21 ... Counter electrode, 80, 90, 180, 190 ... Convex part, 6a ... Data line, 9a ... Pixel electrodes, 11a ... Scan lines

Claims (3)

An element substrate;
A counter substrate disposed to face the element substrate,
The element substrate is
Data lines,
A scan line intersecting the data line;
A first pixel electrode provided in the image display region, a second pixel electrode adjacent to the first pixel electrode in the extending direction of the data line in plan view, and an extension of the first pixel electrode and the scanning line in plan view. the third pixel electrode adjacent in arrangement direction, and the fourth pixel adjacent in the extending direction of the data line and the third pixel electrode with adjacent in the extending direction of the scanning line and the second pixel electrode in a plan view A plurality of pixel electrodes including electrodes;
A first convex portion provided to overlap a corner portion of the first pixel electrode on the fourth pixel electrode side, and provided in a layer between the one pixel electrode and the substrate;
A second substrate;
A common electrode;
A second convex portion provided at a position facing the corner portion on the first pixel electrode side of the fourth pixel electrode,
Convex portions in the same layer as the first convex portion and in the same layer of the second convex portion in the corner portion on the third electrode side of the second pixel electrode and the corner portion on the second electrode side of the third pixel electrode. An electro-optical device characterized in that is not formed. 2. The electro-optical device according to claim 1, wherein cross-sectional shapes of the first convex portion and the second convex portion are asymmetric along one direction in the element substrate. An electronic apparatus comprising the electro-optical device according to claim 1.

Images