JP4935043B2 - Manufacturing apparatus and manufacturing method of three-dimensional stacked semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a stacked semiconductor device, and more particularly to a technique for transporting aligned wafers used in a step of stacking and connecting wafers on which high-definition semiconductor devices are formed.

    In recent years, portable electronic devices such as mobile phones, notebook computers, portable audio devices, and digital cameras have made remarkable progress. Along with this, in addition to improving the performance of the chip itself as well as the performance of the chip itself, improvements in the chip mounting technology are also required, especially from the viewpoint of reducing the chip mounting area and driving the semiconductor device at high speed. There is a need for improved packaging technology.

  In order to reduce the chip mounting area, stacking chips is used to increase the amount of mounted chips without increasing the mounting area, thereby reducing the effective mounting area. For example, JP-A-2001-257307, 2002-050735, and JP-A-2000-349228 disclose such techniques. The first one is based on a wire bond system in which a chip and a chip or a chip and a mounting substrate are connected by a wire. The second one is based on a flip chip method in which a chip and a chip or a chip and a mounting substrate are connected via a micro bump provided on the back surface of the chip. In the third method, the chip and the chip or the chip and the mounting substrate are connected by using both the wire bond method and the flip chip method.

  In order to increase the driving speed of a semiconductor device, a method realized by reducing the thickness of the chip and using a through electrode is effective. For example, Japanese Patent Laid-Open No. 2000-208702 shows an example of mounting with a thickness of micron.

  In the wire bond method, a wire is stretched around the semiconductor bare chip. For this reason, a large occupied area larger than the occupied area of the semiconductor bare chip itself is required, and it takes time because the wires are stretched one by one. On the other hand, in the flip-chip method, since the connection is made by the micro bump formed on the back surface of the semiconductor bare chip, the area for connection is not particularly required, and the area necessary for mounting the semiconductor bare chip is the semiconductor bare chip. It can be almost equal to its own area. Further, since the connection surface can have all the bumps necessary for connection, connection to the wiring board can be performed in a lump. Therefore, the flip-chip method is the most suitable method for minimizing the occupation area necessary for mounting the semiconductor bare chip to achieve high-density mounting, reducing the size of the electronic device and shortening the construction period.

  In addition to the improvement of the chip-mounting substrate and the connection method between the chip and the chip, as a means of reducing the manufacturing cost, a rewiring layer or the like is formed before separating the wafer on which the semiconductor chip is formed into individual chips. Connection bumps are formed, and in some cases, sealing with resin is performed. A semiconductor device in which processing at the wafer level is effective is a semiconductor device having a high manufacturing yield and a small number of pins, and has many advantages particularly in the production of memory. (NIKKEI MICRODEVICE February 2000, page 56 and NIKKEI ELECTRONICS 2003.9.1 P.127).

  On the other hand, development of a manufacturing apparatus for manufacturing such a semiconductor device has also been earnestly performed. For example, the literature introduces an apparatus for aligning and bonding wafers to be bonded. (P. Lindner et al .: 2002 Electronic Component and Technology Conference P.1439). In addition, a similar technique is disclosed in Japanese Patent Laid-Open No. 9-148207.

  By the way, as described above, bumps are generally formed for electrode bonding by flip chip, and bonding between bumps and pads and between bumps and bumps is performed. For this joining, a low melting point metal sympathetic bonding method such as solder, a mechanical pressing method using shrinkage during curing of a nonconductive resin, an anisotropic conductive material in which conductive fine particles are dispersed. There are a method of bonding with conductive fine particles with a conductive resin interposed, and a method of metal diffusion bonding in which bump bumps are heated and pressed to diffuse the metal molecules of the bumps.

  In the method of bonding using such bumps, heating is basically required except for using an ultraviolet curable resin. When the electrodes are bonded, it is necessary that the electrodes be bonded uniformly. For this reason, it is required to uniformly heat the entire wafer and to have a predetermined temperature distribution. There is a cartridge heater as a heater used in such heating, and a device for realizing a target temperature distribution is devised. The conventional heating method is described below.

The method of uniformly heating the substrate is classified as follows.
1. A temperature equalizing plate having a large heat capacity and a high thermal conductivity is placed between a heating source having a distribution of heat generation and the substrate to be heated to make the temperature of the substrate to be heated uniform. This method is disclosed in, for example, Japanese Patent Application Laid-Open No. 11-77559.
2. Considering the amount of heat that escapes from the periphery of the heating table, the amount of heat generated at the periphery of the cartridge heater is increased. This method is disclosed, for example, in Patent Document 2 (Japanese Patent Laid-Open No. Hei 5-290953), and in Patent Document 3 (Actual 8-), which further increases the amount of heat generated at the periphery of a heater in which a plurality of cartridge heaters are arranged. No. 8556).
4). Rather than eliminating the temperature non-uniformity within the heating surface simply by improving the heating element shape and arrangement, the heating element is divided into a plurality of parts, and the temperature is measured at a predetermined position. Control the amount. This method is disclosed, for example, in Patent Document 4 (Japanese Patent Laid-Open No. 2002-184558) for columnar heaters and Patent Document 5 (Japanese Patent Laid-Open No. 2004-22604) for cartridge heaters.
5. The layered structure compensates for non-uniformity in the amount of heat generated within the heat generation surface. In this method, for example, a method in which a heat generation layer is rotated and laminated on a ceramic heater based on the phase of heat generation distribution is described in Patent Document 6 (Japanese Patent No. 2778597), and a method in which heat generation density is considered for each layer is disclosed in Patent Document 6 7 (Japanese Patent Laid-Open No. 2001-102157).

In addition to ensuring temperature uniformity, there is a concept of realizing a desired temperature distribution using a cartridge heater that can select a heat generating portion. This method is disclosed in, for example, Patent Document 8 (Japanese Patent Laid-Open No. 53-11328), and a technique for obtaining different temperature distributions by using the ease of replacement of the cartridge heater is disclosed in Patent Document 9 (Japanese Utility Model Publication No. 8-6235). ).
JP 11-77559 A Japanese Patent Application Laid-Open No. 5-290953 No. 8-8556 JP 2002-184558 A JP 2004-22604 A Japanese Patent No. 2778597 JP 2001-102157 A JP-A-53-11328 No. 8-6235

However, in order to manufacture a stacked semiconductor device at the wafer level, wafers on which predetermined circuits are formed are aligned with each other, and electrode bonding is performed by the above method, it has been found that there are the following problems. .
In the method using a soaking plate and a soaking layer as in Patent Document 1, the thermal response is poor and the throughput does not increase. With the means disclosed in Patent Documents 2 to 7, if the wafer size exceeds 8 inches Sufficient homogenization could not be obtained. In addition, the heating control method by dividing the heater (a cartridge heater is a typical divided heater) and measuring the temperature on the heating surface, and the heating method by resistance value distribution design that takes heat diffusion into account achieves fairly uniform heating. However, the goal of uniform bonding of microelectrodes on a large semiconductor wafer could not be achieved. For this reason, the manufacturing yield of the bonded three-dimensional semiconductor device is low.

  The present invention has been made to solve such a problem, and provides a heating method and a heating apparatus capable of uniformly heating a wafer in order to uniformly connect connection electrodes formed on the wafer. It is aimed at that. Furthermore, it aims at providing the heating apparatus which implement | achieves suitable temperature distribution other than uniform heating as needed.

Means for solving the above problems are as follows:
A heating device configured by stacking cartridge heater layers,
It has a temperature measuring element arranged on the heating surface,
The cartridge heater layer has a configuration in which a plurality of cartridge heaters each having a predetermined resistance value distribution are arranged in parallel.
The stacked cartridge heater layers are heating devices that are rotated by a predetermined angle with respect to each other.

  In this specification, “resistance value distribution” means the heater resistance value distribution per unit length of the cartridge heater, and “heating surface” means that the stacked cartridge heaters are in contact with the surface to be heated. It means a surface. Further, even when the cartridge heater has a uniform resistance value distribution, the cartridge heater has a predetermined resistance value distribution.

  In this way, by using a cartridge heater in the heating device, it is possible to adopt the same outer shape and a different resistance value distribution of the heater itself, so that the heat generation distribution of the cartridge heater layer (also referred to as a heating element layer or simply a heater layer) is adopted. Can be performed only by replacing the cartridge heater. In the present invention, cartridge heater layers constituted by such cartridge heaters are laminated at a predetermined angle, and a temperature measuring element is disposed on the heating surface. By arranging the temperature measuring element, it becomes possible to control the electric power of the cartridge heater based on the output value of the temperature measuring element, and the required temperature distribution can be realized. For this reason, it becomes possible to achieve a uniform temperature and an appropriate temperature distribution even for a larger wafer substrate with higher accuracy.

  In this heating device, a cartridge heater is used in which the resistance value at the end of the cartridge heater is different from the resistance value at the center. When the cartridge heater has such a resistance value distribution, the amount of heat generated can be easily changed between the peripheral portion and the central portion by the current flowing through the cartridge heater. Accordingly, it is easy to make the in-plane heat generation amount of the cartridge heater layer different between the central portion and the peripheral portion, and it is possible to cope with the temperature non-uniformity due to the thermal conductivity and heat insulating properties in the peripheral portion of the cartridge heater layer. And temperature control can be achieved more accurately and more quickly. The resistance values of the cartridge heaters have a uniform distribution, but the resistance values of the cartridge heaters arranged in the peripheral part of the cartridge layer are different from the resistance values of the cartridge heaters arranged in the central part. This configuration also makes it easy to make the in-plane heating value of the cartridge heater layer different between the central part and the peripheral part, and the temperature due to the thermal conductivity and thermal insulation of the cartridge heater layer peripheral part. It becomes easy to deal with the non-uniformity of the temperature, and the control of the temperature distribution is achieved more accurately and more quickly.

  Further, with respect to the above solution, it is effective to set the rotation angle at the time of stacking the cartridge heaters to 90 degrees or 120 degrees. If lamination is not performed, temperature non-uniformity is likely to occur in the direction of each cartridge heater and in the direction perpendicular thereto, but the non-uniformity of each cartridge heater layer, particularly when the laminated cartridge layer has a rotation angle of 90 degrees or 120 degrees. The non-uniformity in the radial direction can be easily eliminated from the central portion, and the control parameter for realizing the set temperature distribution is increased, thereby improving the controllability of the temperature distribution.

Other means for solving the above problems are:
An apparatus for manufacturing a bonded three-dimensional stacked semiconductor device, the apparatus for manufacturing a semiconductor device having a heating device as the above means.

  As an apparatus for manufacturing a three-dimensional stacked semiconductor device, it is important that the in-plane temperature distribution of the wafer stack as the object to be heated is a predetermined distribution. In a three-dimensional semiconductor device manufacturing apparatus having a pressurizing mechanism via the heating apparatus described above (the heating apparatus described in claims 1 to 4), a predetermined rotation angle is based on the measured temperature. It is possible to control the heating of the cartridge heaters of the stacked cartridge heater layers, and a predetermined temperature distribution can be easily obtained. For example, stable bonding is possible at the time of electrode bonding at the wafer level. As a result, it is possible to suppress a decrease in manufacturing yield of the bonded three-dimensional semiconductor device.

Still other means for solving the above problems are as follows:
A method of heating a laminated wafer stack, wherein the wafer laminate is heated by energizing the heating device via the heating device according to any one of claims 1 to 4. As described above, the temperature measuring element is arranged on the heating surface of the heating device of the present invention, and the power of the cartridge heater can be controlled based on this output value. Accordingly, it is possible to achieve a uniform temperature or a predetermined temperature distribution for a larger wafer substrate with higher accuracy. At this time, it is preferable to control the heat generation amount of the plurality of cartridge heaters for each cartridge heater. As a method for controlling the generated heat, a general voltage control method, a current control method, and an energization phase control method using a thyristor can be applied to an AC power supply. In particular, when the wafer to be heated has asymmetric characteristics or when performing asymmetric heat treatment, it is effective to control the amount of heat generated by each cartridge heater itself. The method of controlling the heating power of each cartridge heater is an effective means in terms of eliminating the influence of variations in the distance from the cartridge heater to the heating surface on the temperature distribution.

  Furthermore, the temperature distribution of the wafer laminate can be changed with the heating time, and the temperature of the cartridge heater can be controlled so that the temperature of the entire wafer laminate is finally uniform. It becomes an effective means. When electrode bonding is performed by always heating the whole to a uniform temperature as in the conventional heating process, internal stress due to thermal expansion may accumulate in the wafer stack. When the laminated wafer is separated into semiconductor chips due to this stress, the chips may be damaged (that is, during dicing at the wafer level). However, as in the above-mentioned means, when heating the wafer laminate, it is heated with a temperature distribution in the wafer surface, and finally heated as a uniform temperature distribution to perform electrode bonding, The stress of the chip is relieved, and chip breakage during dicing is reduced. As a method for providing a temperature distribution, for example, when the central part is set to a higher temperature, among the cartridge heaters arranged in parallel, the calorific value of the cartridge heater arranged in the central part is set as the upper and lower heater layers. It is easily realized by increasing the size.

  In the present invention, a pair of wafers laminated (overlaid) for bonding and a wafer in which the electrodes are bonded by heating and pressing after lamination are referred to as a wafer laminated body.

  In the present invention, a wafer having a large area (for example, an 8 to 12 inch semiconductor wafer) is a heat treatment production process uniformly, or a production process in which heat treatment is performed with an appropriate temperature distribution that is not uniform in some cases is an essential process. . By applying the present invention to this process, there is a great effect in improving the manufacturing yield of semiconductor devices.

  A basic embodiment of the present invention will be described with reference to FIG. The heating device includes cartridge heater layers 101 and 102, and each cartridge heater layer has a cartridge heater 111. In the figure, the number of heaters is 7, but the number is determined by the size of the object to be heated and the accuracy of the heating temperature. The higher the accuracy required for temperature control, the more cartridge heaters are required. In the cartridge heater layer 101 and the cartridge heater layer 102, the arrangement direction of the built-in cartridge heaters forms an angle of 90 degrees with each other. Further, when a highly accurate uniform temperature distribution or complicated temperature distribution is required, the number of stacked layers may be three and the angle between them may be 120 degrees. The arrangement direction of the cartridge heater in this case is, for example, the three arrangement directions shown in FIG. 1B, and three cartridge heater layers having such an arrangement direction are laminated. In the above example, two cartridge heater layers are stacked, but the structure is one cartridge heater layer and the cartridge heater is layered and embedded at a predetermined angle. It may be a structured. A conventional method may be used as a method of manufacturing the cartridge heater layer. In FIG. 1, power supply lines and power sources necessary for heating are omitted.

  When controlling the temperature distribution of the object to be heated, the calorific value distribution of the cartridge heater layer is important. The calorific value distribution of the cartridge heater layer depends on the heat generation characteristics of the individual cartridge heaters and the power control for heating the individual heaters. The heat generation characteristics of the cartridge heater itself as a heating source and the arrangement in the heater layer vary depending on the required temperature distribution, but an example is shown in FIG. In the figure, the portion where the amplitude of the triangular wave is large represents the portion where the resistance value is large. In terms of the heat generation amount, this is a portion where the heat generation amount is relatively large in one cartridge heater. In FIG. 2 (a), (b), (c), (d), and (e), array-A, array-B, array-C, array-D, and array-E are shown, respectively.

Array-A: Cartridge heaters having a uniform resistance value distribution and the same resistance value are arranged.
Arrangement-B: One cartridge heater has a uniform resistance value distribution, but the resistance value is highest in the cartridge heater arranged in the center portion, and the resistance values of the cartridge heaters in the peripheral portion are gradually reduced.

  Arrangement-C: One cartridge heater has a uniform resistance value distribution, but the resistance value of the cartridge heater arranged in the central portion is the smallest, and the resistance values of the cartridge heaters in the peripheral portion are gradually increased.

  Arrangement-D: The cartridge heater has a non-uniform resistance value distribution, and the distribution varies depending on the cartridge heater. In this example, the amount of heat generated at the center of the cartridge heater layer is large.

  Arrangement-E: The cartridge heater has a non-uniform resistance value distribution, and the distribution varies depending on the cartridge heater. In this example, the cartridge heater layer has a small amount of heat generated between the central portion and the peripheral portion.

FIG. 3 shows an example in which these cartridge heater layers are stacked by rotating each other by 90 degrees.
The stacked type shown in Stack 1 is a stack heater layer in which the heater array is array-A. That is, the cartridge heaters that uniformly generate heat are stacked in two stages, and the heat generation amount is controlled by controlling the applied voltage or the energization amount based on the output of the temperature measuring element. Employing such a stacked type is advantageous in terms of cost because the same cartridge heater may be manufactured and arranged for one form of the cartridge heater layer.

  The stacked type shown in the stacked layer 2 is one in which cartridge heater layers whose heater array is array-C are stacked vertically. That is, if the same amount of current is supplied, the amount of heat generated in the peripheral portion increases, and this arrangement is advantageous in the case of temperature control considering heat escape from the peripheral portion. Contrary to this stacked type, when the cartridge heater layers of array-B are stacked one above the other, the amount of heat generated in the central part is increased by the same amount of current, the peripheral part has a heat insulating structure, and the peripheral part is heated. This is an advantageous arrangement when there is an accumulation of. When the current is controlled so that the amount of heat generated in the peripheral part and the central part is different, the arrangement as in the stacked type 2 is not necessarily required, but it is necessary in advance in consideration of the range, accuracy and price of the current control of the power source. The cost / performance ratio of the heating device is improved by using a cartridge heater arrangement that matches the heat generation characteristics.

  The stacked type shown in the stacked layer 3 is a stack in which a cartridge heater layer whose heater array is array-D and a cartridge heater layer whose heater array is array-E are stacked vertically. A cartridge heater having a non-uniform distribution of resistance values is used, and two cartridge heater layers having different arrangements are stacked. By keeping the calorific value distribution within one cartridge heater as close to the desired temperature distribution as possible, the controllability of the temperature distribution is remarkably improved, and even when a local temperature gradient is required. It becomes possible. In consideration of the range, accuracy, and price of the current control of the power supply, the cost-to-performance ratio of the heating device is improved by using a cartridge heater arrangement that matches the heat generation characteristics required in advance.

  The stacked type shown in the stacked layer 4 is obtained by vertically stacking a cartridge heater layer having a heater array of array-A and a cartridge heater layer having a heater array of array-C. A cartridge heater layer in which cartridge heaters having a non-uniform distribution of resistance values and a cartridge heater layer in which resistance values of the arranged cartridge heaters have no distribution but different in resistance value are stacked. A laminated type that can quickly obtain a predetermined temperature distribution when the required temperature distribution does not have a strong temperature gradient by combining the cartridge heater layer that gives the temperature distribution and the cartridge heater layer that raises the temperature as a whole. It is.

  Note that the structure of the cartridge heater having such a resistance value distribution is to incorporate a heater whose heater resistance value distribution changes along the length direction of the heater, and changes the turn density of the heating coil. It is possible to use a method, a method of changing the diameter of the heat generating coil, and heat generating materials having different specific resistance values by using a well-known technique. As such well-known techniques, a method of changing the winding number density of the heating coil along the length direction of the heater (see Patent Document 2 and Patent Document 3), and a method of changing the diameter of the heating coil (see Patent Document 2). ), And a method of arranging a plurality of heating elements in the case of the cartridge heater (see Patent Document 8).

Next, an example of the arrangement of the temperature measuring elements of the present invention is shown using FIG.
A plurality of cartridge heaters 311 are arranged in the cartridge heater layer 301 of the heating device, and a temperature measuring element 321 is arranged in the vicinity of the surface of the cartridge heater layer. Although a general element can be used as the temperature measuring element, for example, it is a thermocouple, and the generated electromotive force is transmitted to the control system via a wiring (not shown). The temperature information from the temperature measuring element 321 is fed back to a control system (not shown), and the heat generation amount of the cartridge heater is controlled so that a predetermined temperature distribution is realized. As a method of controlling the heat generation amount, the cartridge heater is divided into a plurality of control groups, and the heat generation amount control is performed for each group. As the grouping, for example, as shown in FIG. 5A, cartridge heaters 415 arranged in line-symmetric positions are divided into the same control group and controlled by the control device 410, or FIG. As described above, the controller 420 may control each cartridge heater 415 itself as a control group. Further, although not shown, the amount of heat generated may be controlled for each stacked layer. Control grouping is determined by the temperature distribution accuracy to be realized, and subdivided control is performed for highly accurate control.

  Here, an example of heating with uniform temperature control is shown. First, regarding the distribution of the heat generation amount of the cartridge heater layer, the distribution of the heat generation amount in a cross section perpendicular to the cartridge heater is as shown in FIG. The characteristics of the three types of heater layers having different heat generation characteristics are indicated by solid lines, broken lines, and alternate long and short dash lines. In any case, the heat generation amount of the heater disposed in the peripheral portion is larger than the heat generation amount of the heater disposed in the central portion. These heat generation characteristics are, for example, heat generation distributions when the same current is supplied to the cartridge heater array in array-C in FIG. In the case of a heating surface of a cartridge heater in which two heater layers are stacked with the heater alignment direction of 90 degrees, the heat generation amount is maximized at four corners and is minimized at the central portion. This heat generation characteristic can also be realized by using array-A and supplying larger heat generation power to the heaters arranged in the peripheral part than the heaters arranged in the central part. Further, when the cartridge heaters are arranged such that the heat generation characteristics are not uniform and the end portions have a larger heat generation amount than the center as in the arrangements D and E, the heat generation characteristics can be realized more easily.

  On the other hand, the temperature of the heating surface is determined by the amount of heat supplied and the amount of heat lost due to heat conduction, and the heat loss due to heat conduction is proportional to the temperature gradient. This heat loss depends on the holding structure of the heating device, but is generally larger in the peripheral portion of the heater layer. Accordingly, the temperature distribution on the heating surface of the laminated cartridge heater layer is as shown in FIG. In the figure, the three temperature distributions correspond to the three heat generation characteristics 6 (a). From this figure, it can be seen that when the heat generation amount of each cartridge heater is controlled so that the distribution of the heat generation amount is indicated by a solid line, a uniform temperature distribution is obtained as a result. In order to realize a predetermined temperature distribution more accurately, the amount of heat generated by each cartridge heater is controlled by the output data of the temperature measuring element arranged on the heating surface. For example, in order to uniformly heat a wafer having a diameter of 200 mm on which a semiconductor chip is formed, a heater layer in which five heaters whose calorific values change in a quadratic curve are arranged in a cartridge heater having a diameter of 12 mm is mutually connected. It heated using the heating apparatus which rotated 90 degree | times and was laminated | stacked. The temperature measurement was performed with 16 thermocouples arranged in a grid, and the current flowing through each cartridge heater was controlled based on the output value (substantially the same as voltage control). When the experiment was performed with the target temperature distribution set to 400 ° C. ± 1 ° C. over the entire wafer having a diameter of 200 mm, 400 ° C.−0.6 ° C. to 400 ° C. + 0.2 ° C. was obtained. This example is for the case where the heat loss due to heat conduction is large in the peripheral part, but when the peripheral part is thermally insulative, a cartridge heater layer having different heat generation characteristics is used. The same idea is the same.

  The above temperature control is a control example that realizes a uniform temperature distribution, but it can be easily realized even when an arbitrary non-uniform temperature distribution is required with the same concept. Nor. It is also possible to change this temperature distribution over time in the heating process. For example, when the wafers are bonded together, the temperature of the central portion is first increased and bonded, and then the whole can be bonded with a uniform temperature distribution and can be easily realized.

  FIG. 7 shows an apparatus for manufacturing a stacked three-dimensional semiconductor according to the present invention. The wafers 601 and 602 aligned with each other are held by wafer holders 605 and 607, respectively. The holders 605 and 607 are in contact with and heated by the heating devices 621 and 623 of the present invention, and the heating devices are pressurized by the pressurizing mechanisms 630 and 632. As a result, the stacked wafers are heated and pressurized. At this time, the amount of heat generated is controlled by the current control device 670 based on the output of the temperature measuring element attached to the heating device. For the current control, a phase control method using a thyristor using an AC power supply may be simple.

  Although only the members necessary for explaining the present invention are shown in the figure, a parallelism adjusting mechanism for adjusting the parallelism of the pressurizing mechanism at the time of pressurization is provided. In the figure, the heating devices are arranged on both sides of the wafer laminate, but depending on the target temperature distribution, the laminated heater of the present invention may be used only for one of the upper and lower heaters.

  As described above, by using the structure of the laminated cartridge heater of the present invention and the control method of the heater, the target temperature distribution can be easily obtained, and even when the target temperature distribution changes, the target temperature easily changed. It should be understood that the distribution is realized.

  Increasing the density and driving speed of semiconductor devices is an inevitable demand in the industry, and the use of the present invention for that purpose is therefore inevitable in the industry.

It is a basic conceptual diagram of the heating apparatus which consists of lamination | stacking of a cartridge heater layer. It is an example of the heat_generation | fever characteristic of the cartridge heater in a cartridge heater layer. It is an example of the heat_generation | fever characteristic in the laminated | stacked cartridge heater layer. It is an example of arrangement | positioning of a temperature measuring element. It is an example which shows the heat_generation | fever unit of a cartridge heater. It is an Example of heating temperature equalization. It is an example of a semiconductor manufacturing apparatus incorporating a heating device.

Explanation of symbols

101, 102 ... Cartridge heater layer 111 ... Cartridge heater 301 ... Cartridge heater layer 311 ... Cartridge heater 321 ... Temperature sensor 415 ... Cartridge heaters 410 and 420 ··· Control devices 621 and 622 ··· Heating devices 630 and 632 ··· Pressure mechanisms 605 and 607 ··· Wafer holders 601 and 603 ··· Wafer stack 670 ··· Control device

Claims (8)

A manufacturing apparatus for a bonded three-dimensional stacked semiconductor device,
A heating device for heating the laminated wafer laminate and a pressurizing mechanism for pressurizing the wafer laminate,
The heating device is
Three layers of hexagonal cartridge heater layers, rotated by 120 degrees from each other,
It has a temperature measuring element arranged on the heating surface,
The cartridge heater layer has a configuration in which a plurality of cartridge heaters each having a predetermined resistance value distribution are arranged in parallel.
An apparatus for manufacturing a semiconductor device, wherein a resistance value of cartridge heaters arranged in a peripheral portion is different from a resistance value of cartridge heaters arranged in a central portion. The manufacturing apparatus according to claim 1, wherein the cartridge heater is a cartridge heater having a resistance value at an end portion different from a resistance value at a center portion. The manufacturing apparatus according to claim 1, wherein the cartridge heater layer has a configuration in which cartridge heaters having a uniform resistance distribution are arranged. The manufacturing method according to any one of claims 1 to 3 , wherein the resistance value of the cartridge heater arranged in the peripheral portion is larger than the resistance value of the cartridge heater arranged in the central portion. Equipment . A method of manufacturing a three-dimensional stacked semiconductor device by heating a stacked wafer stack,
The wafer laminate is held via the manufacturing apparatus according to any one of claims 1 to 4 ,
A manufacturing method comprising heating by energizing a heating device of the manufacturing apparatus . It is a manufacturing method of Claim 5, Comprising:
A method of manufacturing, wherein the amount of heat generated by the plurality of cartridge heaters is controlled for each cartridge heater. It is a manufacturing method of Claim 5 or 6, Comprising:
The temperature distribution of the wafer stack is changed with the heating time, and the current flowing through each of the plurality of cartridge heaters is controlled so that the temperature distribution on the entire surface of the wafer stack becomes a predetermined temperature distribution. Manufacturing method . When bonding wafers of a wafer laminate, the temperature of the central portion of the wafer laminate is first increased to join the central portion, and then the wafer laminate is made to have a uniform temperature distribution. The manufacturing method of Claim 7 which joins the whole body.