JP4934598B2 - Lithographic apparatus, device manufacturing method, and substrate - Google Patents

Description

  The present invention relates to a lithographic apparatus, a device manufacturing method, and a substrate.

  A lithographic apparatus is a machine that forms a desired pattern on a target portion of a substrate. Lithographic projection apparatus can be used, for example, in the manufacture of integrated circuits (ICs). In that case, a patterning device such as a mask can be used to form a circuit pattern corresponding to an individual layer of the IC, which can be applied to a substrate (eg, silicon. Can be imaged onto a target portion (eg, including part of one or more dies) on the wafer. In general, a single substrate will contain a network of adjacent target portions that are successively exposed. Known lithographic projection apparatus include a so-called stepper, in which each target portion is illuminated by exposing the entire pattern onto the target portion at once, via a projection beam in a given direction (the “scanning” direction). A so-called scanner in which each target portion is illuminated by scanning the mask pattern and synchronously scanning the substrate parallel or antiparallel to this direction.

  It has been proposed to immerse at least a portion of the substrate in the lithographic projection apparatus in a relatively high refractive index liquid, such as water, to fill the space between the elements of the projection system and the substrate. The significance of this is that the exposure radiation will have a shorter wavelength in the liquid, thus allowing the imaging of smaller image structures (the effect of the liquid also reduces the effective NA of the lithographic projection apparatus). Can be thought of as increasing and increasing the depth of focus). Other immersion liquids have been proposed, including water in which solid particles (eg, quartz) are suspended.

  However, submerging the substrate, or substrate and substrate table, in a liquid bath (see, eg, US Pat. No. 4,509,852, which is incorporated herein by reference in its entirety) It means that a large amount of liquid may have to be accelerated during the scanning exposure. This can require an additional or more powerful motor, and turbulence in the liquid can lead to undesirable and unpredictable effects.

  One proposed solution is to use a liquid supply system only on localized areas of the substrate, and the liquid supply system supplies liquid between the final element of the projection system and the substrate (The substrate generally has a larger surface area than the final element of the projection system). One method proposed for this adjustment is disclosed in PCT patent application WO 99/49504, which is hereby incorporated in its entirety by reference. As shown in FIGS. 2 and 3, the liquid is supplied onto the substrate by at least one inlet IN, preferably along the direction of movement of the substrate relative to the final element, and after passing under the projection system It is removed by at least one suction port OUT. That is, when the substrate is scanned under the element in the -X direction, liquid is supplied on the + X side of the element and sucked up on the -X side. FIG. 2 schematically shows this configuration in which liquid is supplied via the inlet IN and is sucked up on the other side of the element by an inlet OUT connected to a low pressure source. In the illustration of FIG. 2, the liquid is supplied along the direction of movement of the substrate relative to the final element, but this is not required. An example in which various orientations and numbers of inlets and inlets can be arranged around the final element, and four sets of inlets with inlets on both sides are provided in a regular pattern around the final element, It is shown in FIG.

  Another proposed solution is to provide a liquid supply system comprising a sealing member that extends along at least part of the boundary of the space between the final element of the projection system and the substrate table. Such a solution is shown in FIG. The sealing member is substantially stationary with respect to the projection system in the XY plane, but can move somewhat relative to the Z direction (in the direction of the optical axis). The seal is formed between the sealing member and the surface of the substrate. The sealing is preferably a non-contact sealing such as a gas seal. Such a system comprising a gas seal is disclosed in European Patent Application No. 03252955.4, which is hereby incorporated in its entirety by reference.

  Other types of liquid supply systems are clearly possible, including those with different inlet and inlet configurations and those that are asymmetric.

  The drawbacks of immersion lithography are the space between the final element of the projection system and the substrate, as well as measures that must be taken to ensure that other parts of the apparatus can cope with the presence of a significant amount of liquid. The complexity of the arrangement for supplying the liquid.

  Therefore, it would be advantageous to reduce the complexity of the immersion lithographic apparatus.

According to one aspect, a lithographic projection apparatus configured to transfer a pattern to a radiation sensitive layer or substrate using a radiation beam having an exposure wavelength comprising:
A coating former configured to at least partially coat the substrate with a layer of a non-radiation sensitive coating material that is at least partially transparent to the radiation of the exposure wavelength, wherein the non-sensitive A layer of radiation-sensitive coating material is disposed in front of the layer of radiation-sensitive material in the path of the projection beam, and coating means applies the layer of non-radiation-sensitive coating material to a thickness greater than the exposure wavelength. An apparatus is provided comprising a coating former for applying.

  As radiation from the projection system passes through the coating, its wavelength decreases. This allows a smaller image structure to be imaged on the substrate (which can also be understood as increasing the effective NA of the system or increasing the depth of focus). It is not necessary to provide a complicated liquid supply system as in the conventionally proposed apparatus. This is because the coating provides the same effect as at least partially filling the space between the surface of the substrate and the final element of the projection lens with a liquid.

  In one embodiment, the coating former further includes at least partially coating the substrate with a protective material to protect the layer of radiation sensitive material before coating the substrate with the non-radiation sensitive coating material. It is made to coat. The protective layer protects the radiation sensitive material from contaminants present in the environment of the device.

  In one embodiment, a coating former is further adapted to at least partially cover the non-radiation sensitive coating material with an anti-evaporation material to prevent the non-radiation sensitive coating from evaporating.

According to another aspect of the invention, a device manufacturing method comprising projecting a patterned beam of radiation having an exposure wavelength onto a target portion of a substrate that is at least partially covered by a layer of radiation sensitive material. Because
A layer of non-radiation sensitive coating material that is at least partially transparent to the radiation of the exposure wavelength is applied to the target portion, and the layer of non-radiation sensitive material is within the path of the projection beam. A method is provided that is disposed in front of the layer of radiation sensitive material and wherein the layer of non-radiation sensitive coating material has a thickness greater than the exposure wavelength.

  Therefore, it is possible to reduce the wavelength of radiation by simply applying a coating to the substrate. This method does not add much complexity to the conventionally known methods, and as a result, can be implemented inexpensively.

  In one embodiment, the method comprises the step of at least partially applying a layer of protective material to the substrate to protect the layer of radiation sensitive material prior to applying the layer of non-radiation sensitive coating material. In addition.

  In one embodiment, the method includes at least partially applying a layer of anti-evaporation material to prevent the non-radiation sensitive coating material from evaporating over the layer of non-radiation sensitive coating material. Further included.

  According to another aspect of the invention, a substrate for use in a lithographic projection apparatus, at least partially covered by a layer of radiation sensitive material sensitive to radiation of a projection beam having an exposure wavelength. And being at least partially covered by a layer of non-radiation sensitive coating material that is at least partially transparent to radiation of the exposure wavelength, wherein the layer of non-radiation sensitive material is the projection. A substrate is provided in the beam path that precedes the layer of radiation sensitive material, and wherein the layer of non-radiation sensitive coating material has a thickness greater than the exposure wavelength.

  In one embodiment, the substrate is further coated at least partially with a layer of protective material to protect the layer of radiation sensitive material, the layer of protective material comprising the radiation sensitive material and the non-radiation sensitive material. Between the protective coating materials.

  In one embodiment, the substrate is further coated at least partially with a layer of anti-evaporation material on the non-radiation sensitive coating material layer to prevent the non-radiation sensitive coating material from evaporating. .

  In one embodiment, the coating material has a refractive index in the range of 1.0 to 1.7.

  If the refractive index is within this range, the coating is effective in reducing the wavelength of radiation that passes through it.

  In one embodiment, the coating material is substantially water.

  Water has a refractive index of 1.44, and as a result is a good material to use as a coating. Also, water is not harmful and can be easily applied and removed as needed.

  Another difficulty in immersion lithography has been found to be the presence of bubbles and / or particles in the immersion liquid. This is particularly problematic while scanning the substrate for the projection system. In this case, bubbles and / or particles may adhere to the substrate surface. These bubbles and / or particles can disrupt the patterned beam, and as a result, the quality of the produced substrate can be reduced.

  Thus, for example, it would be advantageous to reduce the effect of bubbles and / or particles in the immersion liquid on product quality.

According to one aspect, in a device manufacturing method,
Supplying immersion liquid between the substrate and at least a portion of the projection system of the lithographic projection apparatus, wherein a non-radiation sensitive material is carried by the substrate and the non-radiation sensitive material is against radiation At least partially transmissive and made of a material different from the immersion liquid, the non-radiation sensitive material being provided over at least a portion of the radiation sensitive layer of the substrate;
Projecting a patterned beam of radiation onto the target portion of the substrate using the projection system via the immersion liquid.

  Bubbles on the surface of the substrate in contact with the immersion liquid can be kept well separated from the radiation sensitive material on the substrate, so that its effect on the patterned beam is that the bubbles are closer to the radiation sensitive material Smaller than the case. If the non-radiation sensitive material is constructed with a sufficient thickness, bubbles on the interface between the immersion liquid and the non-radiation sensitive material will only cause stray light, which will affect the quality of the product being imaged. May not have a significant impact. The above also works on the same principle for particles present in the immersion liquid in addition to bubbles or instead of bubbles.

  In one embodiment, the non-radiation sensitive material has a thickness, the radiation has a wavelength, and the thickness is at least greater than the wavelength. In this way, the wavelength of the radiation from the projection system decreases when it passes through the non-radiation sensitive material. Thereby, a smaller image structure can be imaged on the substrate.

  In one embodiment, the non-radiation sensitive material has a thickness of at least 5 μm. In embodiments, this thickness can be at least 10 μm or at least 20 μm. These thicknesses can dramatically reduce the effect on bubble and / or particle imaging. Also, at these thicknesses, it is possible to supply immersion liquid between the surface of the non-radiation sensitive material and a part of the projection system, which affects the effect of bubbles and / or particles on the imaging quality. It has been found effective to reduce the wavelength of the projection beam while aiming to reduce it.

  In one embodiment, the non-radiation sensitive material has a first index of refraction, the immersion liquid has a second index of refraction, and the first index of refraction is determined by the action of the non-radiation sensitive material. Is at least as large as the second refractive index so as not to increase the wavelength.

  According to another aspect, a substrate for use in a lithographic projection apparatus at least partially covered by a radiation-sensitive layer, wherein the substrate is at least partially transmissive to radiation and lithographic A non-radiation sensitive material in which the patterned beam of radiation of the projection device is made of a material different from the immersion liquid projected onto the target portion of the substrate, wherein the radiation sensitive layer is at least partially A covered substrate is provided.

  This substrate can be used in the methods described herein.

According to another aspect, in a device manufacturing method,
Supplying an immersion liquid to a non-radiation sensitive material on the substrate between the substrate and at least a portion of the projection system of the lithographic projection apparatus, wherein the immersion liquid is at least partially transparent to radiation Of the bubbles and particles in the immersion liquid for the quality of the patterned beam that is provided with a non-radiation sensitive material covering at least a portion of the radiation sensitive layer of the substrate and incident on the radiation sensitive layer Having a thickness effective to substantially reduce at least one effect;
Projecting a patterned beam of radiation onto the target portion of the substrate using the projection system via the immersion liquid.

  Embodiments of the invention will now be described by way of example only with reference to the accompanying schematic drawings, in which corresponding reference numerals indicate corresponding parts.

FIG. 1 schematically depicts a lithographic apparatus according to a particular embodiment of the invention. This apparatus comprises:
An illumination system (illuminator) IL for supplying a projection beam PB of radiation (eg UV radiation).
A first support structure (eg, mask) for holding a patterning device (eg, mask) MA connected to a first positioning device PM for accurately positioning the patterning device relative to the projection system PL -Table) MT.
A second table (e.g. wafer wafer) for holding a substrate W (e.g. resist-coated wafer) connected to a second positioning device PW for accurately positioning the substrate relative to the projection system PL. Table) WT.
Projection system (e.g., refractive projection lens system) for imaging the pattern imparted to the projection beam PB by the patterning device MA onto a target portion C (e.g. including one or more dice) PL.

  As shown here, the apparatus is of a transmissive type (eg, using a transmissive mask). Alternatively, the device can be of the reflective type (eg, using a programmable mirror array).

  The illuminator IL receives a radiation beam from a radiation source SO. The radiation source and the lithographic apparatus can be separate components, for example when the radiation source is an excimer laser. In such a case, the radiation source is not considered to form part of the lithographic apparatus, and the radiation beam is emitted from the radiation source SO with the aid of a beam delivery system BD including, for example, a suitable guide mirror and / or beam expander. Guided to the illuminator IL. In other cases the source can be an integral part of the device, for example when the source is a mercury lamp. The radiation source SO and illuminator IL may be referred to as a radiation system, optionally with a beam delivery system BD.

  The illuminator IL may include an adjustment device AM for adjusting the angular intensity distribution of the beam. In general, at least the outer and / or inner radial extent (commonly referred to as σ-outer and σ-inner respectively) of the intensity distribution in the pupil plane of the illuminator can be adjusted. In addition, the illuminator IL generally comprises various other components such as an integrator IN and a capacitor CO. The illuminator provides a conditioned radiation beam called the projection beam PB that has the desired uniformity and intensity distribution in its cross section.

  The projection beam PB is incident on the mask MA, which is held on the mask table MT. The projection beam PB passes through the projection system PL across the mask MA, and the projection system PL focuses the beam PB onto the target portion C of the substrate W. The substrate table WT is moved accurately with the help of the second positioning device PW and the position sensor IF (eg interferometric device), for example to position the various target portions C in the path of the beam PB. Can do. Similarly, using the first positioning device PM and another position sensor (not explicitly shown in FIG. 1), for example after mechanically removing the mask MA from the mask library or during scanning In addition, the mask MA can be accurately positioned with respect to the path of the beam PB. In general, movement of the object tables MT and WT will be realized with the aid of a long stroke module (coarse positioning) and a short stroke module (fine positioning) that form part of the positioning devices PM and PW. . However, in the case of a stepper (not a scanner), the mask table MT can be simply connected to a short stroke actuator or can be fixed. Mask MA and substrate W may be aligned using mask alignment marks M1, M2 and substrate alignment marks P1, P2.

The illustrated apparatus can be used in the following modes.
1. In step mode, the mask table MT and the substrate table WT remain essentially stationary, and the entire pattern imparted to the projection beam is projected once onto the target portion C (ie, one static exposure). Is done. The substrate table WT is then shifted in the X and / or Y direction so that a different target portion C can be exposed. In step mode, the maximum size of the exposure area limits the size of the target portion C imaged in one static exposure.
2. In scan mode, the mask table MT and the substrate table WT are scanned synchronously, while the pattern imparted to the projection beam is projected onto the target portion C (ie, one dynamic exposure). The speed and direction of the substrate table WT relative to the mask table MT is determined by the (reduction) magnification and image reversal characteristics of the projection system PL. In scan mode, the maximum size of the exposure area limits the width of the target portion (in the non-scan direction) in a single dynamic exposure, while the length of the scanning motion causes the target portion (in the scan direction) ) The height is determined.
3. In another mode, the mask table MT remains essentially stationary with a programmable patterning device while the pattern imparted to the projection beam is projected onto the target portion C. The substrate table WT is moved or scanned. In this mode, a pulsed radiation source is generally used and the programmable patterning device is updated as needed after each movement of the substrate table WT or between successive radiation pulses during the scan. This mode of operation can be readily applied to maskless lithography that utilizes programmable patterning device, such as a programmable mirror array.

  Combinations and / or variations on the above described modes of use or entirely different modes of use may also be used.

  FIG. 5 shows the substrate W ready for processing in the apparatus. A layer of resist 2 is on the surface of the substrate. A layer 3 of protective material is above the resist and protects the resist from contaminants. This layer 3 of protective material is thin and less than one wavelength of radiation of the projection beam. In this example, the thickness is about 50 nm. The coating 4 (or top coat) is applied on top of the protective layer 3 by a coating system (not shown). This can also be done at any time after the protective layer has been applied until the substrate enters the projection area of the lithographic apparatus. The coating 4 is non-photosensitive and is at least partially transparent to radiation at the wavelength of the projection beam. This coating is preferably as transparent as possible to the radiation of the projection beam. The coating 4 can also act as a chemical barrier for environmental pollutants, in which case the protective layer 3 is not required.

  The coating 4 can be liquid or solid, and in this example the coating comprises distilled water. Water is easy to apply and remove from the surface of the substrate W, and there is no chemical danger. However, other materials are also suitable. Examples of liquids that can be used include liquids suitable for immersing the substrate. Examples of solids that can be used include base polymers of photoresists that are transparent but not photosensitive, such as, for example, acetal-based or polyvinylphenol (PVP).

  The coating 4 has a thickness t that is at least as thick as the wavelength of the beam, but can be thicker if necessary. This minimum thickness ensures that the coating is effective in reducing the wavelength of radiation passing through the coating. Therefore, this thickness should be at least 365, 248, 193, 157, or 126 nm, for example, depending on the wavelength of the projection beam. Further, the thickness can be increased corresponding to an arbitrary multiple of a wavelength larger than 1. The limit on thickness will be determined by the clearance between the substrate and the final element of the projection lens. Therefore, the maximum thickness of the coating 4 may be 1 mm or more depending on the configuration of the apparatus. For example, when water is used as the coating 4, a thicker coating can be applied to allow evaporation and prevent the coating from collecting together into droplets due to surface tension effects.

  When the substrate of the present invention is used in a lithographic apparatus, the coating 4 provides the same effect as filling the area between the surface of the substrate and the final element of the projection lens with a liquid. The beam is incident on the resist 2 after passing through the coating 4. As the beam enters the coating 4, its wavelength decreases. In order for this effect to occur, the refractive index of the coating should be between air (1.0) and the refractive index of the resist (about 1.7). The refractive index is preferably about 1.4. Water having a refractive index of 1.44 is particularly suitable for use as a coating. Since the thickness of the protective layer 3 is smaller than the wavelength, the protective layer 3 does not act on the wavelength of the projection beam.

  Thus, the advantage of immersing the substrate is achieved without requiring a complicated liquid supply system. Furthermore, it is possible to apply the present invention to an existing apparatus without requiring a substantial change in its configuration. For example, it is necessary to make a slight change in the handling of the substrate. It is only possible.

  A second embodiment of the present invention is shown in FIG. The configuration of this embodiment relates to the first embodiment except as described below.

  In this embodiment, an evaporation preventing layer 5 is applied on top of the coating 4. The evaporation preventing layer 5 is a liquid, for example, an oil having a boiling point higher than that of the coating 4. Thus, the evaporation of the coating 4 is prevented by the presence of the layer 5. Layer 5 is at least partially transparent to the projection beam and preferably transmits substantially all beam radiation.

  Therefore, evaporation of the coating 4 is prevented and its thickness can be controlled more precisely (the evaporation preventing layer 5 prevents evaporation of the coating 4 so that the thickness of the coating 4 can be maintained over time. There is no decrease.)

  FIG. 7 shows a liquid supply system or reservoir for supplying liquid to the space between the final element of the projection system PL and the substrate W. Another liquid supply system, such as that described above, is used in the third embodiment of the present invention.

  Reservoir 10 forms a contactless seal to the substrate around the imaging area of the projection system so that the liquid is confined to fill the space between the substrate surface and the final element of the projection system. The reservoir is formed by a sealing member 12 disposed below and surrounding the final element of the projection system PL. Liquid is brought into the space within the sealing member 12 below the projection system. The sealing member 12 extends slightly above the final element of the projection system and the liquid level rises above the final element, thereby providing a liquid buffer. The sealing member 12 has an inner peripheral edge, which can be, for example, circular, preferably conforming closely to the shape of the projection system or its final element at the upper end. At the bottom, the inner peripheral edge is not required to be in the shape of the imaging region, for example in such a state, but closely conforms to the rectangle.

  The liquid is confined in the reservoir by a gas seal 16 between the bottom of the sealing member 12 and the surface of the substrate W. The gas seal is supplied under pressure to the gap between the sealing member 12 and the substrate via the inlet 15 and is withdrawn via the first inlet 14, for example air or synthetic air (however, preferably Is formed by N2 or another inert gas. The overpressure at the gas inlet 15, the vacuum level at the first inlet 14, and the geometry of the gap are configured so that air flows at high velocity inward to confine the liquid.

  FIG. 8 shows a substrate W according to a third embodiment of the invention, ready for processing in a lithographic apparatus. A layer 22 of radiation sensitive material (ie a so-called “resist”) is on the surface of the substrate W. The radiation sensitive material 22 is about 200 nm thick. A layer 23 of protective material is above the radiation sensitive material 22 and protects the radiation sensitive material from contaminants. This protective material is thin. In one embodiment, this thickness is less than one wavelength of projection beam radiation. For example, the layer 23 of protective material is about 80 nm thick.

  A top coating 24 is provided (eg, applied) over the layer 23 of protective material. The top coating or layer 24 is made of a material that is not sensitive to radiation at the wavelength of the projection beam PB and is at least partially transparent to radiation at the wavelength of the projection beam PB. In one embodiment, unlike the immersion liquid, it is immiscible with the immersion liquid. In one embodiment, the top coating 24 is applied to the substrate W and can be solid. In one embodiment, the top coating 24 transmits at least 80% of the projection beam radiation. In embodiments, the top coating 24 will transmit at least 90% or at least 95% of the radiation of the projection beam. In one embodiment, the top coating 24 is also one that does not react with the immersion liquid supplied by the liquid supply system, such as those shown in FIGS. 2 and 3, 4 or 7. Water has been found to be a suitable liquid for use as an immersion liquid at a wavelength of 193 nm.

  9 and 10 illustrate how one embodiment of the present invention works. In FIG. 9, the substrate W is a standard substrate that is at least partially covered with immersion liquid during imaging. FIG. 10 shows a substrate according to one embodiment of the present invention during imaging. As can be seen in FIG. 9, the bubbles and / or particles 25 in the immersion liquid in the conventional substrate are only 80 nm away from the radiation sensitive layer 22 (ie, the thickness of the protective layer 3). In this case, bubbles and / or particles on the surface of the substrate can have a significant impact on the quality of the imaging, for example by being in the depth of focus. In contrast, as can be seen from FIG. 10, the top coating 24 keeps bubbles and / or particles in the immersion liquid at least a distance t from the radiation sensitive layer 22. Thus, the effect of bubbles and / or particles on imaging quality can be significantly reduced (eg by defoaming bubbles and / or particles) without further complicating the lithographic projection apparatus. . In one embodiment, the top coating 24 is hydrophilic to help suppress bubble formation and defoam the formed bubbles, for example, having a contact angle in the range of 50 to 70 degrees.

  In one embodiment, it is desirable for top coating 24 to have a refractive index that is substantially the same as the refractive index of the immersion liquid, perhaps within the refractive index of the immersion liquid within 0.2 or 0.1. In this way, optical effects such as those resulting from variations in the thickness of the coating 24 can be ignored. Thus, in one embodiment, the top coat 24 has a refractive index greater than that of air, and in one embodiment is not as large, but is as large as the refractive index of the immersion liquid. In one example, the non-radiation sensitive material has a refractive index in the range of 1 to 1.9.

  In one embodiment, the top coating 24 is much thicker than the wavelength of the projection beam. The ratio of thickness to bubble and / or particle size should be as close as possible to 10: 1 or greater. The maximum expected bubble and / or particle size is 1 μm, so for best performance, the thickness of the top coating 24 should be at least 10 μm. In one example, the thickness can be at least 20 μm or at least 30 μm, and beyond that can be up to 100 μm, which makes it difficult to provide a coating and can be cost prohibitive.

  In one example, the non-radiation sensitive material is substantially insoluble and non-reactive in the immersion liquid. If not, embodiments of the present invention will still function, but it may be necessary to consider dissolution of the top coating 24 during substrate imaging. In one embodiment, the top coat 24 can be removed with a solvent commonly used with resist processing.

  The top coating 24 can be similar to a layer of water with an anti-evaporation coating, or a (conventional) layer 23 of protective material that is an aqueous gel (previously known as a top coat). Polymers or plastics may be suitable.

  It will be apparent that the functions of the layer 23 of protective material and the top coating 24 can be performed by one and the same layer applied at the same time having the thickness and properties described above (ie, one embodiment of the present invention). Can be considered a "thick" top coat).

  In one embodiment, the top coating is hydrophilic and has a contact angle in the range of, for example, 90 to 120 degrees, which helps prevent immersion liquid from leaking from the reservoir 10.

  In this text, reference may be made specifically to the use of a lithographic apparatus during IC manufacture, but the lithographic apparatus described herein includes integrated optics, guides and detection patterns for magnetic domain memories, flats It should be understood that there may be other fields of application such as the manufacture of panel displays, liquid crystal displays (LCDs), thin film magnetic heads and the like. Those skilled in the art will recognize that in the context of such alternative applications, any use of the term “wafer” or “die” herein is the more general term “substrate” or “target portion”, respectively. You will understand that it can be considered synonymous. The substrate referred to herein may be, for example, in a track (typically a tool that forms a layer of resist on the substrate and develops the exposed resist), measurement tool, and / or inspection tool before and after exposure. Can be processed. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate can be processed multiple times, for example to create a multi-layer IC, so that the term substrate used herein can also refer to a substrate that includes a layer that has already been processed multiple times. possible.

  In the above, the use of embodiments of the present invention may be specifically referred to in the context of optical lithography, but the present invention can be used in other applications, such as imprint lithography, and is possible in circumstances. In this case, it should be understood that the present invention is not limited to optical lithography. In imprint lithography, the pattern created on the substrate is defined by the contoured shape of the patterning device. The relief feature of the patterning device can be pressed into a layer of resist applied to the substrate, and the resist is cured on the substrate by applying electromagnetic radiation, heat, pressure, or a combination thereof. The patterning device is moved out of the resist after the resist is cured, leaving a pattern in the resist.

  As used herein, the terms “radiation” and “beam” refer to any type of electromagnetic, including ultraviolet (UV) radiation (eg, having a wavelength of about 365, 248, 193, 157, or 126 nm). Includes radiation.

  The term “lens” may refer to any one or combination of various types of refractive, reflective, magnetic, electromagnetic, and electrostatic optical components, where possible in the context.

  Although specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described.

  The present invention is applicable to any immersion lithography apparatus, particularly but not limited to the types described above.

  The above description is intended to be illustrative rather than limiting. Thus, it will be apparent to one skilled in the art that modifications may be made to the invention as described without departing from the scope of the claims set out below.

  Although specific embodiments of the invention have been described above, it will be appreciated that the invention may be practiced otherwise than as described. This description is not intended to limit the invention.

1 depicts a lithographic projection apparatus according to one embodiment of the present invention. 1 is a cross-sectional view of a liquid supply system for use with an embodiment of the present invention. It is a figure which shows the liquid supply system of FIG. 2 by a plane. FIG. 2 shows a liquid supply system with another prior art lithographic projection apparatus. 1 shows a substrate with a coating according to a first embodiment of the invention. FIG. 4 shows a substrate with a coating according to a second embodiment of the invention. It is a figure which shows the liquid supply system of one Example of this invention. 1 is a diagram illustrating a substrate according to an embodiment of the present invention. 1 shows a conventional substrate under a projection system during imaging. FIG. FIG. 3 shows a substrate according to an embodiment of the invention under a projection system during imaging.

Explanation of symbols

AM adjustment device BD beam delivery system BS beam splitter C target part CO capacitor D distance IF position sensor IL illumination system (illuminator)
IN Inlet IN Integrator M1 Mask alignment mark M2 Mask alignment mark MA Pattern forming device (mask)
MT first support structure (mask table)
OUT Suction port P1 Substrate alignment mark P2 Substrate alignment mark PB Projection beam PL Projection system PM First positioning means PW Second positioning device SO Radiation source W Substrate WT Second table (wafer table)
2 Resist layer 3 Protective material layer 4 Coating 5 Evaporation prevention layer 10 Reservoir 12 Sealing member 14 First inlet 15 Gas inlet 22 Layer of radiation sensitive material 23 Protective material layer 24 Top coating 25 Air bubbles and / Or particles

Claims (31)

In the device manufacturing method,
A substrate, a step of supplying at least a portion of the projection system, an immersion fluid between the lithographic projection apparatus, a non-radiation-sensitive material is carried by the substrate, the non-radiation-sensitive material, with respect to radiation at least partially transparent Te, also, which consists of the immersion liquid with different materials, the non-radiation-sensitive material is provided over at least a portion of the radiation-sensitive layer of the substrate A layer of an anti-evaporation material that prevents the non-radiation sensitive material from evaporating over at least a portion of the non-radiation sensitive material layer ;
Projecting a patterned beam of radiation through the immersion liquid onto a target portion of the substrate using the projection system ;
A device manufacturing method including:   The method of claim 1, wherein the non-radiation sensitive material has a thickness, the radiation has a wavelength, and the thickness is greater than the wavelength. The non-radiation-sensitive material has a thickness of at least 5 [mu] m, method according to claim 1 or 2.   The method of claim 3, wherein the non-radiation sensitive material has a thickness of one of at least 10 μm and at least 20 μm. The non-radiation sensitive material has a first refractive index, the immersion liquid has a second refractive index, and the first refractive index is within 0.2 of the second refractive index. The method according to any one of claims 1 to 4 .   6. The method of claim 5, wherein the first refractive index is one of within 0.1 of the second refractive index and substantially the same as the second refractive index. The method according to any one of claims 1 to 4, wherein the non-radiation sensitive material has a refractive index in the range of 1.0 to 1.9. The non-radiation-sensitive material is substantially the immersion liquid insoluble and said immersion liquid and non-reactive in method according to any one of claims 1 to 7. 9. A method according to any preceding claim, wherein there is a further protective material between the radiation sensitive layer and the non-radiation sensitive layer. The non-radiation sensitive layer has a thickness effective to substantially reduce the effect of at least one of bubbles and particles in the immersion liquid on the quality of the patterned beam incident on the radiation sensitive layer. 10. The method according to any one of claims 1 to 9 , wherein 11. A method according to any one of the preceding claims, further comprising at least partially coating the radiation sensitive layer of the substrate with the non-radiation sensitive material. A substrate for use in a lithographic projection apparatus, at least partially covered by a radiation sensitive layer,
Consisting of a material different from the immersion liquid through which the patterned beam of radiation of the lithographic projection apparatus is projected onto the target portion of the substrate, at least partially transparent to the radiation A non-radiation sensitive material, wherein the radiation sensitive layer is at least partially covered ;
Further, an evaporation preventing material layer for preventing the non-radiation sensitive material from evaporating is provided to cover at least a part of the non-radiation sensitive material layer.
substrate.   The substrate of claim 12, wherein the non-radiation sensitive material has a thickness, the radiation has a wavelength, and the thickness is greater than the wavelength.   The substrate according to claim 12, wherein the non-radiation sensitive material has a thickness of at least 5 μm.   The substrate of claim 14, wherein the non-radiation sensitive material has a thickness of one of at least 10 μm and at least 20 μm. The non-radiation sensitive material has a first refractive index, the immersion liquid has a second refractive index, and the first refractive index is within 0.2 of the second refractive index. The substrate according to any one of claims 12 to 15 .   The substrate of claim 16, wherein the first refractive index is one of within 0.1 of the second refractive index and substantially the same as the second refractive index. 16. A substrate according to any one of claims 12 to 15, wherein the non-radiation sensitive material has a refractive index in the range of 1.0 to 1.9. 19. A substrate according to any one of claims 12 to 18 , wherein there is a further protective material between the radiation sensitive layer and the non-radiation sensitive layer. The substrate according to any one of claims 12 to 19, wherein the non-radiation sensitive material is substantially insoluble in the immersion liquid and non-reactive with the immersion liquid. The non-radiation sensitive layer has a thickness effective to substantially reduce the effect of at least one of bubbles and particles in the immersion liquid on the quality of the patterned beam incident on the radiation sensitive layer. 21. The substrate according to any one of claims 12 to 20, wherein In the device manufacturing method,
And the substrate, during at least a portion of the projection system of a lithographic projection apparatus, comprising: supplying an immersion liquid to a non-radiation-sensitive material on the substrate, is at least partially transparent to radiation Bubbles and particles in the immersion liquid for the quality of the patterned beam that the non-radiation sensitive material is provided over at least a portion of the radiation sensitive layer of the substrate and is incident on the radiation sensitive layer at least one of the action and have a valid thickness to substantially reduce, further, the layer of evaporation inhibiting material which the non-radiation-sensitive material is prevented from evaporation, said non-radiation sensitive among A step provided over at least a part of the layer of functional material ;
Projecting a patterned beam of radiation through the immersion liquid onto a target portion of the substrate using the projection system ;
A device manufacturing method including:   23. The method of claim 22, wherein the thickness is greater than the wavelength of the radiation.   The method of claim 22, wherein the thickness is at least 5 μm.   25. The method of claim 24, wherein the thickness is one of at least 10 [mu] m and at least 20 [mu] m. The non-radiation sensitive material has a first refractive index, the immersion liquid has a second refractive index, and the first refractive index is within 0.2 of the second refractive index. 26. A method according to any one of claims 22 to 25 .   27. The method of claim 26, wherein the first refractive index is one of within 0.1 of the second refractive index and substantially the same as the second refractive index. 26. A method according to any one of claims 22 to 25, wherein the non-radiation sensitive material has a refractive index in the range of 1.0 to 1.9. 29. A method according to any one of claims 22 to 28, wherein the non-radiation sensitive material is substantially insoluble in the immersion liquid and non-reactive with the immersion liquid. 30. A method according to any one of claims 22 to 29 , wherein there is a further protective material between the radiation sensitive layer and the non-radiation sensitive layer. 31. A method according to any one of claims 22 to 30 , further comprising at least partially coating the radiation sensitive layer of the substrate with the non-radiation sensitive material.

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