JP4920520B2 - Dielectric porcelain, manufacturing method thereof, and multilayer ceramic capacitor using the same - Google Patents

Dielectric porcelain, manufacturing method thereof, and multilayer ceramic capacitor using the same Download PDF

Info

Publication number
JP4920520B2
JP4920520B2 JP2007198597A JP2007198597A JP4920520B2 JP 4920520 B2 JP4920520 B2 JP 4920520B2 JP 2007198597 A JP2007198597 A JP 2007198597A JP 2007198597 A JP2007198597 A JP 2007198597A JP 4920520 B2 JP4920520 B2 JP 4920520B2
Authority
JP
Japan
Prior art keywords
dielectric
dielectric ceramic
molar concentration
mass
core
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007198597A
Other languages
Japanese (ja)
Other versions
JP2009035431A (en
Inventor
和巳 金田
周作 上田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taiyo Yuden Co Ltd
Original Assignee
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiyo Yuden Co Ltd filed Critical Taiyo Yuden Co Ltd
Priority to JP2007198597A priority Critical patent/JP4920520B2/en
Publication of JP2009035431A publication Critical patent/JP2009035431A/en
Application granted granted Critical
Publication of JP4920520B2 publication Critical patent/JP4920520B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/018—Dielectrics
    • H01G4/06—Solid dielectrics
    • H01G4/08—Inorganic dielectrics
    • H01G4/12—Ceramic dielectrics
    • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
    • H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
    • H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Ceramic Capacitors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Inorganic Insulating Materials (AREA)

Description

本発明は、ＢａＴｉＯ３を主成分とする誘電体磁器、その製造方法及びそれを用いた積層セラミックコンデンサに関し、特にＮｉあるいはＮｉ合金からなる内部電極を含む積層セラミックコンデンサに用いられる誘電体磁器、その製造方法及びそれを用いた積層セラミックコンデンサに関する。また、特に、歪みの小さな積層セラミックコンデンサや、誘電率の温度特性に優れた積層セラミックコンデンサに関する。 The present invention relates to a dielectric ceramic mainly composed of BaTiO 3 , a method for manufacturing the same, and a multilayer ceramic capacitor using the dielectric ceramic, and more particularly to a dielectric ceramic used for a multilayer ceramic capacitor including an internal electrode made of Ni or Ni alloy. The present invention relates to a manufacturing method and a multilayer ceramic capacitor using the same. In particular, the present invention relates to a multilayer ceramic capacitor having a small distortion and a multilayer ceramic capacitor having excellent temperature characteristics of dielectric constant.

近年、積層コンデンサの高容量化に伴い、音鳴き現象が問題となっている。これは、強誘電体材料に由来する圧電効果により電歪が生じ、交流電流下において積層コンデンサ自身が振動し、固着された回路基板を振動させて音を発生させるためである。このため電歪の小さい材料が求められてきた。電歪の小さい誘電体材料として、ＢａＴｉＯ３またはＢａ（ＴｉＺｒ）Ｏ３で表されるペロブスカイト化合物に、希土類元素およびＭｎ、Ｍｇ、Ｃｒ等のアクセプタ−元素を添加した誘電体セラミック組成物がある（特許文献１参照）。希土類元素はマトリックスに固溶し、シフターとしてキュリー点を低温側に移動し、室温εを低下させる機能をもつ。アクセプタ−元素もデプレッサ−としてε低下の効果を持つとともに、ドナーとして作用する希土類を電気的に中和し、高信頼性を確保できる。
特許第３５６７７５９号公報 In recent years, the squealing phenomenon has become a problem with increasing capacity of multilayer capacitors. This is because electrostriction occurs due to the piezoelectric effect derived from the ferroelectric material, the multilayer capacitor itself vibrates under an alternating current, and the fixed circuit board vibrates to generate sound. For this reason, a material with low electrostriction has been demanded. As a dielectric material with low electrostriction, there is a dielectric ceramic composition in which a rare earth element and an acceptor element such as Mn, Mg, Cr are added to a perovskite compound represented by BaTiO 3 or Ba (TiZr) O 3 ( Patent Document 1). The rare earth element dissolves in the matrix and functions as a shifter by moving the Curie point to the low temperature side and lowering the room temperature ε. The acceptor element also has the effect of reducing ε as a depressor and can electrically neutralize the rare earth acting as a donor to ensure high reliability.
Japanese Patent No. 3567759

上記のような電界誘起歪が小さいという特性を持つ誘電体の微細構造として、焼結体のグレイン内部に希土類金属を均一に固溶させた構造が有効である（粒界と同等濃度）。具体的手法として原材料である、ＢａＣＯ３、ＴｉＯ２、ＺｒＯ２と所定の希土類酸化物、アクセプタ−元素の酸化物を配合し、１次仮焼により複合酸化物を予め合成する方法が挙げられる。しかし、この方法では添加物がグレイン内部に均一に固溶してしまうため、誘電率の温度特性が劣化するという問題があった。 As a dielectric fine structure having such a characteristic that the electric field induced strain is small as described above, a structure in which a rare earth metal is uniformly dissolved in the grains of the sintered body is effective (equivalent concentration to the grain boundary). As a specific method, there is a method in which a raw material, BaCO 3 , TiO 2 , ZrO 2 , a predetermined rare earth oxide, and an acceptor element oxide are blended, and a composite oxide is synthesized in advance by primary calcination. However, this method has a problem that the temperature characteristics of the dielectric constant deteriorate because the additive is uniformly dissolved in the grains.

本発明は、上記従来技術の問題点を解決し、電界誘起歪みを低減したまま、誘電率の温度特性が改善された誘電体磁器、誘電体磁器の製造方法及びその誘電体磁器を用いた積層セラミックコンデンサを提供することを課題とする。   The present invention solves the above-mentioned problems of the prior art, reduces the electric field induced distortion, and improves the dielectric constant temperature characteristics, the method of manufacturing the dielectric ceramic, and the lamination using the dielectric ceramic It is an object to provide a ceramic capacitor.

本発明においては、上記の課題を解決するために、以下の手段を採用する。
（１）主成分が、ＢａＴｉ（１−ｘ）ＺｒｘＯ３＋ａＲｅ＋ｂＭ（但し、Ｒｅは、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、Ｌｕ、Ｙから選ばれる少なくとも１種類の希土類元素の酸化物であり、Ｍは、Ｍｇ、Ａｌ、Ｃｒ、Ｍｎ、Ｆｅ、Ｎｉ、Ｃｕ、Ｚｎ、Ｖから選ばれる少なくとも１種類の金属元素の酸化物）で表される誘電体磁器において、
１．０００≦Ｂａ／Ｔｉ≦１．４５０、
５≦１００ｘ≦３０、
０．０２≦ａ≦０．１８、
０．０２≦ｂ≦０．１８であり、
前記主成分１００質量部に対して、
Ｓｉ元素を含んだ化合物を、０．２質量部≦Ｓｉ元素を含んだ化合物≦５．０質量部含有し、
グレインが、コア部とそれを取り囲むシェル部からなるコア−シェル構造を有する
ことを特徴とする誘電体磁器である。
（２）前記コア部に存在するＺｒＯ２のモル濃度／前記シェル部に存在するＺｒＯ２のモル濃度≧０．９（「条件１」という）、
前記コア部に存在する希土類のモル濃度／前記シェル部に存在する希土類のモル濃度≦０．３（「条件２」という）、
０．２≦（前記コア部の直径／前記グレインの直径）≦０．５（「条件３」という）、
としたときに、
（誘電体磁器中の条件１と条件２と条件３を同時に満たすグレイン粒子の個数）／（誘電体磁器中の全てのグレイン粒子の個数）≧０．６である
ことを特徴とする前記（１）の誘電体磁器である。
（３）主成分が、ＢａＴｉ（１−ｘ）ＺｒｘＯ３＋ａＲｅ＋ｂＭ（但し、Ｒｅは、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、Ｌｕ、Ｙから選ばれる少なくとも１種類の希土類元素の酸化物であり、Ｍは、Ｍｇ、Ａｌ、Ｃｒ、Ｍｎ、Ｆｅ、Ｎｉ、Ｃｕ、Ｚｎ、Ｖから選ばれる少なくとも１種類の金属元素の酸化物）で表される誘電体磁器の製造方法において、
Ｂａ化合物、ＴｉＯ２及びＺｒＯ２を混合し、仮焼してＢａＴｉ（１−ｘ）ＺｒｘＯ３を得た後、そのＢａＴｉ（１−ｘ）ＺｒｘＯ３に、Ｒｅ原料、Ｍ原料及び焼結助剤を混合し、仮焼することにより誘電体粉末を製造し、前記誘電体粉末を焼成することにより、
１．０００≦Ｂａ／Ｔｉ≦１．４５０、
５≦１００ｘ≦３０、
０．０２≦ａ≦０．１８、
０．０２≦ｂ≦０．１８であり、
前記主成分１００質量部に対して、
Ｓｉ元素を含んだ化合物を、０．２質量部≦Ｓｉ元素を含んだ化合物≦５．０質量部含有し、
グレインが、コア部とそれを取り囲むシェル部からなるコア−シェル構造を有する誘電体磁器を製造することを特徴とする誘電体磁器の製造方法である。
（４）前記コア部に存在するＺｒＯ２のモル濃度／前記シェル部に存在するＺｒＯ２のモル濃度≧０．９（「条件１」という）、
前記コア部に存在する希土類のモル濃度／前記シェル部に存在する希土類のモル濃度≦０．３（「条件２」という）、
０．２≦（前記コア部の直径／前記グレインの直径）≦０．５（「条件３」という）、
したときに、
（誘電体磁器中の条件１と条件２と条件３を同時に満たすグレイン粒子の個数）／（誘電体磁器中の全てのグレイン粒子の個数）≧０．６である
ことを特徴とする前記（３）の誘電体磁器の製造方法である。
（５）複数の誘電体磁器層と、前記誘電体磁器層間に形成された内部電極と、前記内部電極に電気的に接続された外部電極とを備えた積層セラミックコンデンサにおいて、前記誘電体磁器層が、前記（１）および（２）の誘電体磁器で構成されていることを特徴とする積層セラミックコンデンサである。 In the present invention, the following means are adopted in order to solve the above problems.
(1) The main component is BaTi (1-x) Zr x O 3 + aRe + bM (where Re is La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, An oxide of at least one rare earth element selected from Lu and Y, and M is an oxide of at least one metal element selected from Mg, Al, Cr, Mn, Fe, Ni, Cu, Zn, and V In the dielectric porcelain represented by
1.000 ≦ Ba / Ti ≦ 1.450,
5 ≦ 100x ≦ 30,
0.02 ≦ a ≦ 0.18,
0.02 ≦ b ≦ 0.18,
For 100 parts by mass of the main component,
Containing 0.2 parts by mass of a compound containing Si element ≦ 5.0 parts by mass of a compound containing Si element;
The dielectric is a dielectric ceramic characterized in that the grain has a core-shell structure including a core portion and a shell portion surrounding the core portion.
(2) Molar concentration of ZrO 2 present in the core portion / Molar concentration of ZrO 2 present in the shell portion ≧ 0.9 (referred to as “condition 1”),
Molar concentration of rare earth present in the core portion / Molar concentration of rare earth present in the shell portion ≦ 0.3 (referred to as “condition 2”),
0.2 ≦ (diameter of the core / diameter of the grain) ≦ 0.5 (referred to as “condition 3”),
And when
(Number of grain particles satisfying both condition 1, condition 2 and condition 3 in dielectric ceramic) / (number of all grain particles in dielectric ceramic) ≧ 0.6 (1) ) Dielectric ceramic.
(3) The main component is BaTi (1-x) Zr x O 3 + aRe + bM (where Re is La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, An oxide of at least one rare earth element selected from Lu and Y, and M is an oxide of at least one metal element selected from Mg, Al, Cr, Mn, Fe, Ni, Cu, Zn, and V In the method of manufacturing a dielectric ceramic represented by
Ba compound, a mixture of TiO 2 and ZrO 2, after obtaining the BaTi (1-x) Zr x O 3 calcinated at its BaTi (1-x) Zr x O 3, Re feedstock, M raw material and A dielectric powder is produced by mixing and calcining a sintering aid, and by firing the dielectric powder,
1.000 ≦ Ba / Ti ≦ 1.450,
5 ≦ 100x ≦ 30,
0.02 ≦ a ≦ 0.18,
0.02 ≦ b ≦ 0.18,
For 100 parts by mass of the main component,
Containing 0.2 parts by mass of a compound containing Si element ≦ 5.0 parts by mass of a compound containing Si element;
A method of manufacturing a dielectric ceramic, characterized in that a grain manufactures a dielectric ceramic having a core-shell structure including a core portion and a shell portion surrounding the core portion.
(4) Molar concentration of ZrO 2 present in the core portion / Molar concentration of ZrO 2 present in the shell portion ≧ 0.9 (referred to as “condition 1”),
Molar concentration of rare earth present in the core portion / Molar concentration of rare earth present in the shell portion ≦ 0.3 (referred to as “condition 2”),
0.2 ≦ (diameter of the core / diameter of the grain) ≦ 0.5 (referred to as “condition 3”),
When
(Number of grain particles satisfying condition 1, condition 2 and condition 3 in dielectric ceramic) / (number of all grain particles in dielectric ceramic) ≧ 0.6 (3) ) Of dielectric ceramics.
(5) In the multilayer ceramic capacitor comprising a plurality of dielectric ceramic layers, internal electrodes formed between the dielectric ceramic layers, and external electrodes electrically connected to the internal electrodes, the dielectric ceramic layers Is a multilayer ceramic capacitor comprising the dielectric ceramics of (1) and (2) above.

本発明の誘電体磁器及びそれを用いた積層セラミックコンデンサは、上記の組成かつ微細構造を持つため、粒子（グレイン）の強誘電性（圧電性）は小さく、電界誘起歪が低減された状態のまま誘電率の温度特性を改善できる（εｒがＭＡＸ１７００程度で、Ｘ６Ｓ特性を満足できるレベル）。また、本発明の誘電体は１２５０℃以下で焼結可能である。   Since the dielectric ceramic of the present invention and the multilayer ceramic capacitor using the dielectric ceramic have the above composition and fine structure, the ferroelectricity (piezoelectricity) of the particles (grains) is small, and the electric field induced strain is reduced. The temperature characteristic of the dielectric constant can be improved as it is (a level that satisfies the X6S characteristic when εr is about MAX1700). The dielectric of the present invention can be sintered at 1250 ° C. or lower.

本発明の誘電体磁器は、一般式ＡＢＯ３のＢａとＴｉを主成分とするチタン酸バリウム系ペロブスカイト固溶体であり、そのペロブスカイト固溶体において、１．０００≦Ｂａ／Ｔｉ≦１．４５０の範囲であることを特徴とする。また、一般式ＡＢＯ３のペロブスカイト固溶体には、副成分としてＺｒを含有しており、このときにＢ＝Ｔｉ（１−ｘ）Ｚｒｘと表現したときに、５≦１００ｘ≦３０の範囲であることを特徴とする。
Ｂａ／Ｔｉが１．０００より小さい場合や、Ｚｒの量（１００ｘ）が５よりも少ない場合は、誘電率の温度特性（ＴＣＣ）が劣り、Ｂａ／Ｔｉが１．４５０より大きい場合や、Ｚｒの量（１００ｘ）が３０よりも多い場合は、１２５０℃以下で焼結できなくなるので、上記の範囲が好ましい。 The dielectric ceramic of the present invention is a barium titanate-based perovskite solid solution mainly composed of Ba and Ti of the general formula ABO 3 , and the perovskite solid solution has a range of 1.000 ≦ Ba / Ti ≦ 1.450. It is characterized by that. Further, the perovskite solid solution of the general formula ABO 3 contains Zr as an accessory component, and when expressed as B = Ti (1-x) Zrx at this time, the range is 5 ≦ 100x ≦ 30. It is characterized by.
When Ba / Ti is less than 1.000, or when the amount of Zr (100x) is less than 5, the temperature characteristics (TCC) of the dielectric constant is inferior, and when Ba / Ti is greater than 1.450, Zr When the amount (100x) is more than 30, the above range is preferable because sintering cannot be performed at 1250 ° C. or lower.

また、主成分として、チタン酸バリウム系ペロブスカイト固溶体と共に、Ｒｅを含むものである。Ｒｅ：Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、Ｌｕ、Ｙから選ばれる少なくとも１種類の希土類元素の酸化物であり、０．０２≦ａ≦０．１８の範囲である。
Ｒｅの含有量（ａ）が、０．０２より少ない場合は、誘電率の温度特性（ＴＣＣ）が劣り、Ｒｅの含有量（ａ）が、０．１８より多い場合は、１２５０℃以下で焼結できなくなるので、上記の範囲が好ましい。 Moreover, it contains Re as a main component together with a barium titanate-based perovskite solid solution. Re: an oxide of at least one rare earth element selected from La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y, and 0.02 ≦ The range is a ≦ 0.18.
When the Re content (a) is less than 0.02, the temperature characteristics (TCC) of the dielectric constant are inferior. When the Re content (a) is more than 0.18, the temperature is reduced to 1250 ° C. or less. The above range is preferable because it cannot be formed.

さらに、主成分として、チタン酸バリウム系ペロブスカイト固溶体と共に、Ｍを含むものである。Ｍは、Ｍ：Ｍｇ、Ａｌ、Ｃｒ、Ｍｎ、Ｆｅ、Ｎｉ、Ｃｕ、Ｚｎ、Ｖから選ばれる少なくとも１種類の金属元素の酸化物であり、０．０２≦ｂ≦０．１８の範囲である。
Ｍの含有量（ｂ）が、０．０２より少ない場合は、絶縁性が劣り、Ｍの含有量（ｂ）が、０．１８より多い場合は、１２５０℃以下で焼結できなくなるので、上記の範囲が好ましい。 Furthermore, it contains M as a main component together with a barium titanate-based perovskite solid solution. M is an oxide of at least one metal element selected from M: Mg, Al, Cr, Mn, Fe, Ni, Cu, Zn, and V, and has a range of 0.02 ≦ b ≦ 0.18. .
When the content (b) of M is less than 0.02, the insulation is inferior, and when the content (b) of M is more than 0.18, sintering cannot be performed at 1250 ° C. or lower. The range of is preferable.

上記の主成分に対して、副成分として、Ｓｉ元素を含んだ化合物を含有するものである。Ｓｉ元素を含んだ化合物の含有量は、前記主成分１００質量部に対して、０．２質量部≦Ｓｉ元素を含んだ化合物≦５．０質量部の範囲である。
Ｓｉ元素を含んだ化合物としては、Ｓｉ元素と酸素の化合物などを用いることができる。
Ｓｉ元素を含んだ化合物が、０．２質量部より少ない場合は、１２５０℃以下で焼結できなくなり、Ｓｉ元素を含んだ化合物が、５．０質量部より多い場合は、誘電率の温度特性（ＴＣＣ）が劣るので、上記の範囲が好ましい。 The above main component contains a compound containing Si element as a subcomponent. The content of the compound containing Si element is in the range of 0.2 parts by mass ≦ compound containing Si element ≦ 5.0 parts by mass with respect to 100 parts by mass of the main component.
As the compound containing Si element, a compound of Si element and oxygen can be used.
When the compound containing Si element is less than 0.2 parts by mass, it cannot be sintered at 1250 ° C. or less, and when the compound containing Si element is more than 5.0 parts by mass, the temperature characteristics of dielectric constant Since (TCC) is inferior, the above range is preferable.

また、本発明の誘電体磁器において、グレインは、コア部とそれを取り囲むシェル部からなるコア−シェル構造を持つ。ＺｒＯ２がグレイン内（コア部）にも存在し、シェル部とのモル濃度比は９０％以上であり、コア部の添加物（Ｒｅ：希土類酸化物）の固溶量（モル濃度比）は、シェル部の３０％以下（添加物の固溶が少ない）であり、コア部の大きさ（直径）が、グレイン直径の２０％〜５０％である構造のグレインを含む。上記の構造を持つグレインが焼結体（誘電体磁器）中で粒子数で６０％以上存在すること（以下、「特定条件を満たすグレイン」という。）が好ましい。
換言すると（特定条件を関係式で表した場合）、
前記コア部に存在するＺｒＯ２のモル濃度／前記シェル部に存在するＺｒＯ２のモル濃度≧０．９（「条件１」という）、
前記コア部に存在する希土類のモル濃度／前記シェル部に存在する希土類のモル濃度≦０．３（「条件２」という）、
０．２≦（前記コア部の直径／前記グレインの直径）≦０．５（「条件３」という）、
としたときに、
（誘電体磁器中の条件１と条件２と条件３を同時に満たすグレイン粒子の個数）／（誘電体磁器中の全てのグレイン粒子の個数）≧０．６
と表される。
このような微細構造を持つため、グレインの強誘電性（圧電性）は小さく、電界誘起歪が低減された状態のまま誘電率の温度特性を改善できる。 In the dielectric ceramic according to the present invention, the grain has a core-shell structure including a core portion and a shell portion surrounding the core portion. ZrO 2 is also present in the grains (core part), the molar concentration ratio with the shell part is 90% or more, and the solid solution amount (molar concentration ratio) of the additive (Re: rare earth oxide) in the core part is In addition, it includes grains having a structure that is 30% or less of the shell portion (the solid solution of the additive is small) and the size (diameter) of the core portion is 20% to 50% of the grain diameter. It is preferable that grains having the above structure exist in the sintered body (dielectric ceramic) in an amount of 60% or more (hereinafter referred to as “grains satisfying a specific condition”).
In other words (when the specific condition is expressed by a relational expression)
ZrO 2 molar concentration ≧ 0.9 present in a molar concentration / the shell portion of the ZrO 2 present in the core portion (referred to as "Condition 1"),
Molar concentration of rare earth present in the core portion / Molar concentration of rare earth present in the shell portion ≦ 0.3 (referred to as “condition 2”),
0.2 ≦ (diameter of the core / diameter of the grain) ≦ 0.5 (referred to as “condition 3”),
And when
(Number of grain particles satisfying conditions 1, 2 and 3 in the dielectric ceramic) / (number of all grain particles in the dielectric ceramic) ≧ 0.6
It is expressed.
Due to such a fine structure, the ferroelectricity (piezoelectricity) of grains is small, and the temperature characteristics of dielectric constant can be improved while electric field induced strain is reduced.

積層セラミックコンデンサの製造方法については、限定されるものではないが、以下のような方法を採用することができる。
原料としてＢａＣＯ３、ＴｉＯ２、ＺｒＯ２を準備し、これらの原料を、所定の組成が得られるように秤量する。その後、これらの原料を湿式混合し、乾燥した後、１１００〜１３００℃にて仮焼し、チタン酸バリウム系固溶体を得る。
上記のチタン酸バリウム系固溶体に対して、Ｒｅ原料（酸化物）、ＭｇＯ、ＭｎＯ（Ｍｎ原料としては、ＭｎＣＯ３、Ｍｎ３Ｏ４等でも良い）等のＭ原料、Ｓｉ元素を含んだ化合物（例えばＳｉＯ２やＳｉＯ２系ガラス）を所定組成が得られるように秤量する。その後、これらの原料を湿式混合し、乾燥した後、７００〜９００℃にて仮焼し、誘電体粉末を得る。
上記のようにして得た誘電体粉末にＰＶＢバインダ（またはアクリルバインダ）、可塑剤、溶媒となる有機溶剤を適宜添加してスラリーを作製し、所定の厚み（３〜１０μｍ）のグリーンシートを作製する。グリーンシートに内部電極用Ｎｉペーストを印刷し、積層・圧着後、所定の形状に切り出す。積層数は、１０〜２０とすることが好ましい。その後、（Ｎｉが酸化されない）不活性雰囲気下で脱バインダ処理を行い、Ｎｉ外電ペーストを塗布した後に、還元雰囲気下、１１５０〜１３５０℃で０．５〜２時間、焼成を行い、Ｎ２雰囲気下、８００〜１０５０℃で０．５〜２時間、再酸化処理を行う。 The method for manufacturing the multilayer ceramic capacitor is not limited, but the following method can be employed.
BaCO 3 , TiO 2 , and ZrO 2 are prepared as raw materials, and these raw materials are weighed so as to obtain a predetermined composition. Thereafter, these raw materials are wet-mixed and dried, and then calcined at 1100 to 1300 ° C. to obtain a barium titanate solid solution.
M raw material such as Re raw material (oxide), MgO, MnO (Mn raw material may be MnCO 3 , Mn 3 O 4, etc.) or a compound containing Si element (barium titanate solid solution) For example, SiO 2 or SiO 2 glass) is weighed so as to obtain a predetermined composition. Thereafter, these raw materials are wet-mixed, dried, and calcined at 700 to 900 ° C. to obtain a dielectric powder.
A PVB binder (or acrylic binder), a plasticizer, and an organic solvent as a solvent are appropriately added to the dielectric powder obtained as described above to produce a slurry, and a green sheet having a predetermined thickness (3 to 10 μm) is produced. To do. The Ni paste for internal electrodes is printed on the green sheet, and after lamination and pressure bonding, it is cut into a predetermined shape. The number of stacked layers is preferably 10-20. Thereafter, the binder removal treatment is performed in an inert atmosphere (where Ni is not oxidized), and after applying the Ni external electric paste, firing is performed in a reducing atmosphere at 1150 to 1350 ° C. for 0.5 to 2 hours, and an N 2 atmosphere Then, re-oxidation treatment is performed at 800 to 1050 ° C. for 0.5 to 2 hours.

（実施例１）
原料としてＢａＣＯ３、ＴｉＯ２、ＺｒＯ２を準備する。これらの原料を秤量し、表１ののように、Ｂａ／Ｔｉ比を０．９９０〜１．５３８の範囲、Ｚｒ量を４．０〜３５．０の範囲で変化させた。その後、これらの原料をボールミルにて湿式混合し、乾燥した後、１１００〜１３００℃にて仮焼し、チタン酸バリウム系固溶体を得た。
上記のチタン酸バリウム系固溶体に対して、Ｒｅ酸化物としてＧｄ酸化物、Ｍ酸化物としてＭｇＯ、ＭｎＯ、Ｓｉ元素を含んだ化合物としてＳｉＯ２を表１の組成が得られるように秤量した。その後、これらの原料をボールミルにて湿式混合し、乾燥した後、８５０℃にて仮焼し、誘電体粉末を得た。
上記の完成粉末にＰＶＢバインダ、可塑剤、溶媒となる有機溶剤を適宜添加してスラリーを作製し、ダイ・コーターにて５μｍ厚みのグリーンシートを作製した。グリーンシートにスクリーン印刷法にて内部電極用Ｎｉペーストを印刷し、電極枚数２１層（層間２０層）に積層・圧着後、３２１６形状に切り出した。その後、（Ｎｉが酸化されない）不活性雰囲気下で脱バインダ処理を行い、Ｎｉ外電ペーストを塗布した後に、還元雰囲気下（酸素分圧：１０−１０ａｔｍ程度・１２５０℃−２ｈ）で焼成を行い、Ｎ２雰囲気下、１０００℃−２ｈｒで再酸化処理を行った。
以上のような工程で、３２１６形状、層数２０層、層間厚み：４μｍ程度のＮｉ内部電極積層セラミックコンデンサ（試料番号１０１〜１０５）を作製した。 Example 1
BaCO 3 , TiO 2 , and ZrO 2 are prepared as raw materials. These raw materials were weighed, and as shown in Table 1, the Ba / Ti ratio was changed in the range of 0.990 to 1.538, and the Zr amount was changed in the range of 4.0 to 35.0. Thereafter, these raw materials were wet mixed in a ball mill, dried, and then calcined at 1100 to 1300 ° C. to obtain a barium titanate solid solution.
With respect to the barium titanate solid solution, SiO 2 was weighed so that the composition shown in Table 1 was obtained as a compound containing Gd oxide as Re oxide, MgO, MnO, and Si element as M oxide. Thereafter, these raw materials were wet mixed in a ball mill, dried, and calcined at 850 ° C. to obtain a dielectric powder.
A slurry was prepared by appropriately adding a PVB binder, a plasticizer, and an organic solvent serving as a solvent to the finished powder, and a green sheet having a thickness of 5 μm was prepared using a die coater. The Ni paste for internal electrodes was printed on the green sheet by the screen printing method, and was laminated and pressure-bonded on 21 layers (20 layers) of the electrode, and then cut into a 3216 shape. After that, binder removal treatment is performed in an inert atmosphere (Ni is not oxidized), and Ni external electric paste is applied, followed by firing in a reducing atmosphere (oxygen partial pressure: about 10 −10 atm · 1250 ° C.−2 h). Then, re-oxidation treatment was performed at 1000 ° C. for 2 hr in an N 2 atmosphere.
Through the steps as described above, a Ni internal electrode multilayer ceramic capacitor (sample numbers 101 to 105) having a 3216 shape, 20 layers, and an interlayer thickness of about 4 μm was manufactured.

上記のＮｉ内部電極積層セラミックコンデンサを用いて、下記の特性に関して評価を実施した。
・電気特性：εｒ、ｔａｎδ、誘電率の温度特性（ＴＣＣ）・・・１Ｖ−１ｋＨｚの条件で測定。
・
特定条件を満たすグレインの存在率測定・・・積層コンデンサから、透過型電子顕微鏡（ＳＴＥＭ）用として薄片試料を作成した。透過型電子顕微鏡（ＳＴＥＭ）により、加速電圧を３００ｋＶの条件下で試料を観察した。この時のプローブ径は、５ｎｍであった。透過型電子顕微鏡（ＳＴＥＭ）に付属しているＥＤＸ検出器による線分析より、粒子内部の１０箇所からＧｄおよびＺｒの特性Ｘ線（Ｌα１）を検出した。この測定結果（コア部のモル濃度と、シェル部のモル濃度）を用いて、ＺｒＯ２の濃度比、添加物（希土類酸化物）の濃度比、コア部の大きさの全てが上記の特定条件を満たしているグレイン（コア−シェル粒子）の存在率を算出した。
・歪判定：積層セラミックコンデンサにＤＣ２０Ｖを重畳しＡＣ５Ｖｐ−ｐの交流電界を印加したときのＬ方向の変位量をレーザー変位計で測定した。この時のＬ寸歪（変位）量が１０ｎｍを超えると無視できない騒音が生じたため、歪量が１０ｎｍ未満であればＯＫ（○）と判断した。
試料番号１０１〜１０５について、誘電体の組成とコンデンサの特性の評価を表１に示す。 Using the Ni internal electrode multilayer ceramic capacitor, the following characteristics were evaluated.
Electrical characteristics: εr, tan δ, temperature characteristics of dielectric constant (TCC): Measured under conditions of 1V-1 kHz.
・
Grain abundance measurement satisfying specific conditions: A thin sample was prepared from a multilayer capacitor for a transmission electron microscope (STEM). A sample was observed with a transmission electron microscope (STEM) under an acceleration voltage of 300 kV. The probe diameter at this time was 5 nm. Characteristic X-rays (Lα1) of Gd and Zr were detected from 10 locations inside the particles by line analysis using an EDX detector attached to a transmission electron microscope (STEM). Using this measurement result (molar concentration of the core portion and molar concentration of the shell portion), the concentration ratio of ZrO 2 , the concentration ratio of the additive (rare earth oxide), and the size of the core portion are all specified above. The abundance of grains (core-shell particles) satisfying the above was calculated.
Strain determination: The amount of displacement in the L direction when DC 20 V was superimposed on the multilayer ceramic capacitor and an AC electric field of AC 5 V p-p was applied was measured with a laser displacement meter. At this time, when the L dimension distortion (displacement) amount exceeded 10 nm, noise that could not be ignored was generated. Therefore, if the strain amount was less than 10 nm, it was determined to be OK (◯).
Table 1 shows the evaluation of dielectric composition and capacitor characteristics for sample numbers 101 to 105.

表１より、１．０００≦Ｂａ／Ｔｉ≦１．４５０、５≦１００ｘ≦３０を満たす本発明例の試料番号１０２〜１０４のコンデンサは、１２５０℃で焼結でき、εｒ、ｔａｎδ、誘電率の温度特性（ＴＣＣ）が優れ、歪量が１０ｎｍ未満であること、上記の特定条件を満たす粒子（グレイン）が６０％以上であることが分かる。これに対して、Ｂａ／Ｔｉが１．０００より小さく、Ｚｒの量（１００ｘ）が５よりも少ない試料番号１０１のコンデンサは、誘電率の温度特性（ＴＣＣ）が劣り、上記の特定条件を満たす粒子（グレイン）が６０％未満であった。また、Ｂａ／Ｔｉが１．４５０より大きく、Ｚｒの量（１００ｘ）が３０よりも多い試料番号１０５のコンデンサは、１２５０℃で焼結できなかった。   From Table 1, the capacitors of sample numbers 102 to 104 of the present invention examples satisfying 1.000 ≦ Ba / Ti ≦ 1.450 and 5 ≦ 100x ≦ 30 can be sintered at 1250 ° C., and have εr, tanδ, dielectric constant It can be seen that the temperature characteristics (TCC) are excellent, the strain amount is less than 10 nm, and the particles (grains) satisfying the above specific conditions are 60% or more. On the other hand, the capacitor of sample number 101 with Ba / Ti smaller than 1.000 and the amount of Zr (100x) smaller than 5 is inferior in the temperature characteristics (TCC) of the dielectric constant and satisfies the above specific condition. Particles (grains) were less than 60%. Further, the capacitor of Sample No. 105 in which Ba / Ti was larger than 1.450 and the amount of Zr (100 ×) was larger than 30 could not be sintered at 1250 ° C.

（実施例２）
Ｂａ／Ｔｉ比を１．１９４、１．１９１、１．２３８又は１．１２８とし、Ｚｒ量を１５．０、１８．０又は１０．０（１００ｘ）とし、１２００℃にて仮焼して得たチタン酸バリウム系固溶体に対して、Ｍ酸化物（ＭｇＯ及びＭｎＯ）をそれぞれ０．０２５及び０．００５（ｂ）、Ｓｉ元素を含んだ化合物（ＳｉＯ２）を１．５又は４．０質量部とし、Ｒｅ酸化物の種類と量（ａ）を表２のように変化させて混合したこと以外は、実施例１と同様にして誘電体粉末を得た。その後、実施例１と同様に、Ｎｉ内部電極積層セラミックコンデンサ（試料番号２０１〜２１８）を作製し、特性に関して評価を実施した。
試料番号２０１〜２１８について、誘電体の組成とコンデンサの特性の評価を表２に示す。 (Example 2)
Ba / Ti ratio is 1.194, 1.191, 1.238 or 1.128, Zr amount is 15.0, 18.0 or 10.0 (100x), and calcined at 1200 ° C. Further, 0.025 and 0.005 (b) of M oxide (MgO and MnO) and 1.5 or 4.0 mass of a compound containing Si element (SiO 2 ) with respect to the barium titanate solid solution. A dielectric powder was obtained in the same manner as in Example 1 except that the type and amount (a) of the Re oxide were changed as shown in Table 2 and mixed. Thereafter, in the same manner as in Example 1, Ni internal electrode multilayer ceramic capacitors (sample numbers 201 to 218) were produced, and the characteristics were evaluated.
Table 2 shows the evaluation of the dielectric composition and the capacitor characteristics for sample numbers 201-218.

表２より、Ｒｅの含有量（ａ）が、０．０２≦ａ≦０．１８を満たす本発明例の試料番号２０１〜２１４、２１６、２１７のコンデンサは、１２５０℃で焼結でき、εｒ、ｔａｎδ、誘電率の温度特性（ＴＣＣ）が優れ、歪量が１０ｎｍ未満であること、上記の特定条件を満たす粒子（グレイン）が６０％以上であることが分かる。これに対して、Ｒｅの含有量（ａ）が、０．０２より少ない試料番号２１５のコンデンサは、誘電率の温度特性（ＴＣＣ）が劣り、上記の特定条件を満たす粒子（グレイン）が６０％未満であった。また、Ｒｅの含有量（ａ）が、０．１８より多い試料番号２１８のコンデンサは、１２５０℃で焼結できなかった。   From Table 2, the capacitors of Sample Nos. 201 to 214, 216, and 217 of the present invention examples in which the Re content (a) satisfies 0.02 ≦ a ≦ 0.18 can be sintered at 1250 ° C., εr, It can be seen that the temperature characteristics (TCC) of tan δ and dielectric constant are excellent, the strain amount is less than 10 nm, and the particles (grains) satisfying the above specific conditions are 60% or more. On the other hand, the capacitor with sample number 215 having a Re content (a) of less than 0.02 is inferior in temperature characteristics (TCC) of dielectric constant, and has 60% of particles (grains) satisfying the above specific conditions. Was less than. In addition, the capacitor of sample number 218 having a Re content (a) greater than 0.18 could not be sintered at 1250 ° C.

（実施例３）
Ｂａ／Ｔｉ比を１．２３８、Ｚｒ量を１８．０（１００ｘ）とし、１２３０℃にて仮焼して得たチタン酸バリウム系固溶体に対して、Ｒｅ酸化物（Ｇｄ酸化物）を０．０６（ａ）、Ｓｉ元素を含んだ化合物（ＳｉＯ２）を１．５又は４．０質量部とし、Ｍ酸化物の種類と量（ｂ）を表３のように変化させて混合したこと以外は、実施例１と同様にして誘電体粉末を得た。その後、実施例１と同様に、Ｎｉ内部電極積層セラミックコンデンサ（試料番号３０１〜３１１）を作製し、特性に関して評価を実施した。
試料番号３０１〜３１１について、誘電体の組成とコンデンサの特性の評価を表３に示す。 (Example 3)
With respect to the barium titanate solid solution obtained by calcining at 1230 ° C. with a Ba / Ti ratio of 1.238 and a Zr amount of 18.0 (100 ×), Re oxide (Gd oxide) 06 (a), except that the compound containing Si element (SiO 2 ) is 1.5 or 4.0 parts by mass, and the type and amount (b) of M oxide are changed as shown in Table 3 and mixed. Obtained a dielectric powder in the same manner as in Example 1. Thereafter, in the same manner as in Example 1, Ni internal electrode multilayer ceramic capacitors (sample numbers 301 to 311) were produced, and the characteristics were evaluated.
Table 3 shows the evaluation of dielectric composition and capacitor characteristics for sample numbers 301 to 311.

表３より、Ｍ酸化物の含有量（ｂ）が、０．０２≦ｂ≦０．１８を満たす本発明例の試料番号３０１〜３０７、３０９、３１０のコンデンサは、１２５０℃で焼結でき、εｒ、ｔａｎδ、誘電率の温度特性（ＴＣＣ）が優れ、歪量が１０ｎｍ未満であること、請求項２に規定する条件を満たす粒子（グレイン）が６０％以上であることが分かる。これに対して、Ｍ酸化物の含有量（ｂ）が、０．０２より少ない試料番号３０８のコンデンサは、絶縁性が良くなかった。また、Ｍ酸化物の含有量（ｂ）が、０．１８より多い試料番号３１１のコンデンサは、１２５０℃で焼結できなかった。   From Table 3, the capacitors of sample numbers 301 to 307, 309, and 310 of the present invention examples in which the content (b) of M oxide satisfies 0.02 ≦ b ≦ 0.18 can be sintered at 1250 ° C. It can be seen that the temperature characteristics (TCC) of εr, tan δ, and dielectric constant are excellent, the strain is less than 10 nm, and the particles (grains) satisfying the conditions defined in claim 2 are 60% or more. On the other hand, the capacitor of sample number 308 having an M oxide content (b) of less than 0.02 was not good in insulation. Further, the capacitor of sample number 311 having an M oxide content (b) of more than 0.18 could not be sintered at 1250 ° C.

（実施例４）
Ｂａ／Ｔｉ比を１．２３８、Ｚｒ量を１８．０（１００ｘ）とし、１２３０℃にて仮焼して得たチタン酸バリウム系固溶体に対して、Ｒｅ酸化物（Ｇｄ酸化物）を０．０６（ａ）、Ｍ酸化物（ＭｇＯ及びＭｎＯ）をそれぞれ０．０３５及び０．００５（ｂ）とし、Ｓｉ元素を含んだ化合物の種類と量を表４のように変化させて混合したこと以外は、実施例１と同様にして誘電体粉末を得た。その後、実施例１と同様に、Ｎｉ内部電極積層セラミックコンデンサ（試料番号４０１〜４０５）を作製し、特性に関して評価を実施した。
試料番号４０１〜４０５について、誘電体の組成とコンデンサの特性の評価を表４に示す。 Example 4
With respect to the barium titanate solid solution obtained by calcining at 1230 ° C. with a Ba / Ti ratio of 1.238 and a Zr amount of 18.0 (100 ×), Re oxide (Gd oxide) 06 (a), M oxides (MgO and MnO) were 0.035 and 0.005 (b), respectively, and the type and amount of the compound containing Si element were changed as shown in Table 4 and mixed. Obtained a dielectric powder in the same manner as in Example 1. Thereafter, in the same manner as in Example 1, Ni internal electrode multilayer ceramic capacitors (sample numbers 401 to 405) were produced, and the characteristics were evaluated.
Table 4 shows the evaluation of the dielectric composition and the capacitor characteristics for sample numbers 401 to 405.

表４より、主成分１００質量部に対して、「０．２質量部≦Ｓｉ元素を含んだ化合物≦５．０質量部」を満たす本発明例の試料番号４０２、４０３、４０５のコンデンサは、１２５０℃で焼結でき、εｒ、ｔａｎδ、誘電率の温度特性（ＴＣＣ）が優れ、歪量が１０ｎｍ未満であること、請求項２に規定する条件を満たす粒子（グレイン）が６０％以上であることが分かる。これに対して、Ｓｉ元素を含んだ化合物が、０．２質量部より少ない試料番号４０１のコンデンサは、１２５０℃で焼結できなかった。また、Ｓｉ元素を含んだ化合物が、５．０質量部より多い試料番号４０４のコンデンサは、誘電率の温度特性（ＴＣＣ）が劣っていた。   From Table 4, with respect to 100 parts by mass of the main component, the capacitors of sample numbers 402, 403 and 405 of the present invention satisfying “0.2 part by mass ≦ compound containing Si element ≦ 5.0 parts by mass” It can be sintered at 1250 ° C., has excellent temperature characteristics (TCC) of εr, tan δ, and dielectric constant, has a strain of less than 10 nm, and has 60% or more of grains (grains) that satisfy the conditions defined in claim 2 I understand that. In contrast, the capacitor of Sample No. 401 containing less than 0.2 parts by mass of the compound containing Si element could not be sintered at 1250 ° C. Moreover, the capacitor of the sample number 404 in which the compound containing Si element is more than 5.0 parts by mass has inferior dielectric constant temperature characteristics (TCC).

以上の実施例に示されるように、主成分が、ＢａＴｉ（１−ｘ）ＺｒｘＯ３＋ａＲｅ＋ｂＭで表される誘電体磁器及びそれを用いた積層セラミックコンデンサにおいて、１．０００≦Ｂａ／Ｔｉ≦１．４５０、５≦１００ｘ≦３０、０．０２≦ａ≦０．１８、０．０２≦ｂ≦０．１８とし、前記主成分１００質量部に対して、Ｓｉ元素を含んだ化合物を、０．２質量部≦Ｓｉ元素を含んだ化合物≦５．０質量部含有させることにより、１２５０℃以下で焼結でき、εｒ、ｔａｎδ、誘電率の温度特性（ＴＣＣ）が優れ、歪量が１０ｎｍ未満の特性のものを得ることができる。 As shown in the above examples, in a dielectric ceramic whose main component is represented by BaTi (1-x) Zr x O 3 + aRe + bM and a multilayer ceramic capacitor using the same, 1.000 ≦ Ba / Ti ≦ 1.450, 5 ≦ 100x ≦ 30, 0.02 ≦ a ≦ 0.18, 0.02 ≦ b ≦ 0.18, and a compound containing Si element with respect to 100 parts by mass of the main component is 0 .2 parts by mass ≦ compound containing Si element ≦ 5.0 parts by mass can be sintered at 1250 ° C. or lower, excellent in temperature characteristics (TCC) of εr, tan δ, dielectric constant, and strain less than 10 nm Can be obtained.

Claims (5)

主成分が、ＢａＴｉ（１−ｘ）ＺｒｘＯ３＋ａＲｅ＋ｂＭ（但し、Ｒｅは、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、Ｌｕ、Ｙから選ばれる少なくとも１種類の希土類元素の酸化物であり、Ｍは、Ｍｇ、Ａｌ、Ｃｒ、Ｍｎ、Ｆｅ、Ｎｉ、Ｃｕ、Ｚｎ、Ｖから選ばれる少なくとも１種類の金属元素の酸化物）で表される誘電体磁器において、
１．０００≦Ｂａ／Ｔｉ≦１．４５０、
５≦１００ｘ≦３０、
０．０２≦ａ≦０．１８、
０．０２≦ｂ≦０．１８であり、
前記主成分１００質量部に対して、
Ｓｉ元素を含んだ化合物を、０．２質量部≦Ｓｉ元素を含んだ化合物≦５．０質量部含有し、
グレインが、コア部とそれを取り囲むシェル部からなるコア−シェル構造を有する
ことを特徴とする誘電体磁器。 The main component is BaTi (1-x) Zr x O 3 + aRe + bM (where Re is La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y M is an oxide of at least one metal element selected from Mg, Al, Cr, Mn, Fe, Ni, Cu, Zn, and V). In dielectric ceramics,
1.000 ≦ Ba / Ti ≦ 1.450,
5 ≦ 100x ≦ 30,
0.02 ≦ a ≦ 0.18,
0.02 ≦ b ≦ 0.18,
For 100 parts by mass of the main component,
Containing 0.2 parts by mass of a compound containing Si element ≦ 5.0 parts by mass of a compound containing Si element;
A dielectric porcelain wherein the grain has a core-shell structure comprising a core portion and a shell portion surrounding the core portion. 前記コア部に存在するＺｒＯ２のモル濃度／前記シェル部に存在するＺｒＯ２のモル濃度≧０．９（「条件１」という）、
前記コア部に存在する希土類のモル濃度／前記シェル部に存在する希土類のモル濃度≦０．３（「条件２」という）、
０．２≦（前記コア部の直径／前記グレインの直径）≦０．５（「条件３」という）、
としたときに、
（誘電体磁器中の条件１と条件２と条件３を同時に満たすグレイン粒子の個数）／（誘電体磁器中の全てのグレイン粒子の個数）≧０．６である
ことを特徴とする請求項１に記載の誘電体磁器。 ZrO 2 molar concentration ≧ 0.9 present in a molar concentration / the shell portion of the ZrO 2 present in the core portion (referred to as "Condition 1"),
Molar concentration of rare earth present in the core portion / Molar concentration of rare earth present in the shell portion ≦ 0.3 (referred to as “condition 2”),
0.2 ≦ (diameter of the core / diameter of the grain) ≦ 0.5 (referred to as “condition 3”),
And when
2. The number of grain particles satisfying conditions 1, 2 and 3 in the dielectric ceramic simultaneously / (number of all grain particles in the dielectric ceramic) ≧ 0.6. Dielectric porcelain described in 1. 主成分が、ＢａＴｉ（１−ｘ）ＺｒｘＯ３＋ａＲｅ＋ｂＭ（但し、Ｒｅは、Ｌａ、Ｃｅ、Ｐｒ、Ｎｄ、Ｓｍ、Ｅｕ、Ｇｄ、Ｔｂ、Ｄｙ、Ｈｏ、Ｅｒ、Ｔｍ、Ｙｂ、Ｌｕ、Ｙから選ばれる少なくとも１種類の希土類元素の酸化物であり、Ｍは、Ｍｇ、Ａｌ、Ｃｒ、Ｍｎ、Ｆｅ、Ｎｉ、Ｃｕ、Ｚｎ、Ｖから選ばれる少なくとも１種類の金属元素の酸化物）で表される誘電体磁器の製造方法において、
Ｂａ化合物、ＴｉＯ２及びＺｒＯ２を混合し、仮焼してＢａＴｉ（１−ｘ）ＺｒｘＯ３を得た後、そのＢａＴｉ（１−ｘ）ＺｒｘＯ３に、Ｒｅ原料、Ｍ原料及び焼結助剤を混合し、仮焼することにより誘電体粉末を製造し、前記誘電体粉末を焼成することにより、
１．０００≦Ｂａ／Ｔｉ≦１．４５０、
５≦１００ｘ≦３０、
０．０２≦ａ≦０．１８、
０．０２≦ｂ≦０．１８であり、
前記主成分１００質量部に対して、
Ｓｉ元素を含んだ化合物を、０．２質量部≦Ｓｉ元素を含んだ化合物≦５．０質量部含有し、
グレインが、コア部とそれを取り囲むシェル部からなるコア−シェル構造を有する誘電体磁器を製造することを特徴とする誘電体磁器の製造方法。 The main component is BaTi (1-x) Zr x O 3 + aRe + bM (where Re is La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Y M is an oxide of at least one metal element selected from Mg, Al, Cr, Mn, Fe, Ni, Cu, Zn, and V). In the method of manufacturing a dielectric ceramic,
Ba compound, a mixture of TiO 2 and ZrO 2, after obtaining the BaTi (1-x) Zr x O 3 calcinated at its BaTi (1-x) Zr x O 3, Re feedstock, M raw material and A dielectric powder is produced by mixing and calcining a sintering aid, and by firing the dielectric powder,
1.000 ≦ Ba / Ti ≦ 1.450,
5 ≦ 100x ≦ 30,
0.02 ≦ a ≦ 0.18,
0.02 ≦ b ≦ 0.18,
For 100 parts by mass of the main component,
Containing 0.2 parts by mass of a compound containing Si element ≦ 5.0 parts by mass of a compound containing Si element;
A method of manufacturing a dielectric ceramic, characterized in that a grain has a core-shell structure including a core portion and a shell portion surrounding the core portion. 前記コア部に存在するＺｒＯ２のモル濃度／前記シェル部に存在するＺｒＯ２のモル濃度≧０．９（「条件１」という）、
前記コア部に存在する希土類のモル濃度／前記シェル部に存在する希土類のモル濃度≦０．３（「条件２」という）、
０．２≦（前記コア部の直径／前記グレインの直径）≦０．５（「条件３」という）、
としたときに、
（誘電体磁器中の条件１と条件２と条件３を同時に満たすグレイン粒子の個数）／（誘電体磁器中の全てのグレイン粒子の個数）≧０．６である
ことを特徴とする請求項３に記載の誘電体磁器の製造方法。 ZrO 2 molar concentration ≧ 0.9 present in a molar concentration / the shell portion of the ZrO 2 present in the core portion (referred to as "Condition 1"),
Molar concentration of rare earth present in the core portion / Molar concentration of rare earth present in the shell portion ≦ 0.3 (referred to as “condition 2”),
0.2 ≦ (diameter of the core / diameter of the grain) ≦ 0.5 (referred to as “condition 3”),
And when
4. The number of grain particles satisfying the conditions 1, 2 and 3 in the dielectric ceramic at the same time / (the number of all grain particles in the dielectric ceramic) ≧ 0.6. A method for producing a dielectric ceramic according to claim 1. 複数の誘電体磁器層と、前記誘電体磁器層間に形成された内部電極と、前記内部電極に電気的に接続された外部電極とを備えた積層セラミックコンデンサにおいて、前記誘電体磁器層が、請求項１又は２に記載の誘電体磁器で構成されていることを特徴とする積層セラミックコンデンサ。   In a multilayer ceramic capacitor comprising a plurality of dielectric ceramic layers, internal electrodes formed between the dielectric ceramic layers, and external electrodes electrically connected to the internal electrodes, the dielectric ceramic layers are A multilayer ceramic capacitor comprising the dielectric ceramic according to Item 1 or 2.
JP2007198597A 2007-07-31 2007-07-31 Dielectric porcelain, manufacturing method thereof, and multilayer ceramic capacitor using the same Active JP4920520B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007198597A JP4920520B2 (en) 2007-07-31 2007-07-31 Dielectric porcelain, manufacturing method thereof, and multilayer ceramic capacitor using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007198597A JP4920520B2 (en) 2007-07-31 2007-07-31 Dielectric porcelain, manufacturing method thereof, and multilayer ceramic capacitor using the same

Publications (2)

Publication Number Publication Date
JP2009035431A JP2009035431A (en) 2009-02-19
JP4920520B2 true JP4920520B2 (en) 2012-04-18

Family

ID=40437689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007198597A Active JP4920520B2 (en) 2007-07-31 2007-07-31 Dielectric porcelain, manufacturing method thereof, and multilayer ceramic capacitor using the same

Country Status (1)

Country Link
JP (1) JP4920520B2 (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014172799A (en) * 2013-03-11 2014-09-22 Ricoh Co Ltd Piezoelectric material, manufacturing method of piezoelectric material, piezoelectric actuator, manufacturing method of piezoelectric actuator
DE102013110978A1 (en) 2013-10-02 2015-04-16 Epcos Ag Ceramic multilayer capacitor
JP6226078B2 (en) 2014-08-04 2017-11-08 株式会社村田製作所 Multilayer ceramic capacitor
JP6267673B2 (en) * 2015-05-27 2018-01-24 岩井　裕 Method for producing ferroelectric ceramics
JP7025695B2 (en) * 2018-01-31 2022-02-25 Tdk株式会社 Dielectric Porcelain Compositions, Electronic Components and Multilayer Ceramic Capacitors
JP7025694B2 (en) 2018-01-31 2022-02-25 Tdk株式会社 Dielectric Porcelain Compositions, Electronic Components and Multilayer Ceramic Capacitors
JP7545200B2 (en) * 2019-10-17 2024-09-04 太陽誘電株式会社 Ceramic electronic components and their manufacturing method
CN111056828B (en) * 2019-12-31 2022-06-21 清华大学深圳国际研究生院 Holmium ferrite-based terahertz metamaterial, preparation method thereof and optical device
JP7441120B2 (en) * 2020-06-05 2024-02-29 太陽誘電株式会社 Multilayer ceramic capacitors and dielectric materials
CN112919882B (en) * 2021-03-30 2022-09-16 江西省萍乡市华东出口电瓷有限公司 High-strength high-hardness weather-resistant porcelain insulator and preparation method thereof
CN113880569A (en) * 2021-10-11 2022-01-04 深圳市信维通信股份有限公司 Dielectric material of multilayer chip ceramic capacitor and preparation method thereof
CN114394832B (en) * 2022-01-19 2022-11-29 江苏科技大学 Barium zirconate titanate based porcelain with stable dielectric temperature and preparation method thereof
JP2023123968A (en) 2022-02-25 2023-09-06 太陽誘電株式会社 Dielectric composition, laminate ceramic electronic part, and manufacturing method of laminate ceramic electronic part
WO2024190164A1 (en) * 2023-03-16 2024-09-19 太陽誘電株式会社 Capacitor and method for producing capacitor
CN116813355B (en) * 2023-06-27 2024-04-19 南充三环电子有限公司 Ceramic dielectric material and preparation method and application thereof

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001240466A (en) * 2000-02-28 2001-09-04 Taiyo Yuden Co Ltd Porcelain of dielectrics and electronic parts of laminated ceramics
JP2002080276A (en) * 2000-06-30 2002-03-19 Taiyo Yuden Co Ltd Dielectric ceramic composition and ceramic capacitor
JP2002284572A (en) * 2001-03-27 2002-10-03 Taiyo Yuden Co Ltd Dielectric ceramic composition and ceramic condenser
JP4208448B2 (en) * 2001-09-27 2009-01-14 太陽誘電株式会社 Porcelain capacitor and manufacturing method thereof
JP2006319205A (en) * 2005-05-13 2006-11-24 Taiyo Yuden Co Ltd Laminated ceramic capacitor and its manufacturing method

Also Published As

Publication number Publication date
JP2009035431A (en) 2009-02-19

Similar Documents

Publication Publication Date Title
JP4920520B2 (en) Dielectric porcelain, manufacturing method thereof, and multilayer ceramic capacitor using the same
JP4591448B2 (en) Dielectric ceramic and manufacturing method thereof, and multilayer ceramic capacitor
JP6387871B2 (en) Dielectric ceramic composition and ceramic electronic component
JP4626892B2 (en) Dielectric ceramic and multilayer ceramic capacitor
JP4720193B2 (en) Dielectric ceramic and manufacturing method thereof, and multilayer ceramic capacitor
JP4821357B2 (en) Electronic component, dielectric ceramic composition and method for producing the same
JP5210300B2 (en) Dielectric porcelain and multilayer ceramic capacitor
JP5483825B2 (en) Dielectric porcelain and multilayer ceramic capacitor
JP2007031273A (en) Dielectric porcelain composition for low temperature firing and laminated ceramic condenser using the same
US8592334B2 (en) Dielectric ceramic composition and an electronic component
US20120075768A1 (en) Dielectric ceramic composition and manufacturing method thereof, and ceramic electronic device
JP5409443B2 (en) Multilayer ceramic capacitor
JPWO2005090260A1 (en) Multilayer ceramic capacitor
JP2010052964A (en) Dielectric ceramic and method for producing the same, and monolithic ceramic capacitor
JPWO2013022064A1 (en) Dielectric ceramic, multilayer ceramic electronic component, multilayer ceramic capacitor, and multilayer ceramic capacitor manufacturing method
JP5094283B2 (en) Dielectric porcelain and multilayer ceramic capacitor
JP5106626B2 (en) Multilayer ceramic capacitor
JP2010208905A (en) Method for manufacturing dielectric ceramic, dielectric ceramic, method for manufacturing laminated ceramic capacitor and the laminated ceramic capacitor
WO2012035935A1 (en) Dielectric ceramic, multilayer ceramic capacitor, method for producing the dielectric ceramic, and method for manufacturing the multilayer ceramic capacitor
JP4663141B2 (en) Dielectric porcelain and multilayer electronic components
CN105359236A (en) Layered ceramic capacitor
JP2005187296A (en) Dielectric ceramic composition and multilayer ceramic capacitor
JP6226078B2 (en) Multilayer ceramic capacitor
JP2005263508A (en) Dielectric ceramic composition, laminated porcelain capacitor, and method for producing the capacitor
JP2005272262A (en) Dielectric ceramic composition, multilayer ceramic capacitor and method of manufacturing the same

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110422

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110426

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110617

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20120119

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120201

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

Ref document number: 4920520

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150210

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250