JP4915701B2 - 被測定物の電気的パラメーターを測定する方法 - Google Patents
被測定物の電気的パラメーターを測定する方法 Download PDFInfo
- Publication number
- JP4915701B2 JP4915701B2 JP2008138071A JP2008138071A JP4915701B2 JP 4915701 B2 JP4915701 B2 JP 4915701B2 JP 2008138071 A JP2008138071 A JP 2008138071A JP 2008138071 A JP2008138071 A JP 2008138071A JP 4915701 B2 JP4915701 B2 JP 4915701B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- dut
- terminals
- terminal
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/27—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements
- G01R31/275—Testing of devices without physical removal from the circuit of which they form part, e.g. compensating for effects surrounding elements for testing individual semiconductor components within integrated circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0023—Measuring currents or voltages from sources with high internal resistance by means of measuring circuits with high input impedance, e.g. OP-amplifiers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measurement Of Resistance Or Impedance (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Description
104、106、108、104’、106’、108’、 202、204、206 ABB
110、210 DUT
Claims (2)
- 少なくとも3つ端子を有するDUTの電気的パラメーターを測定する方法であって、
前記DUTの第1の端子に第1の交流電圧を印加する工程と;
前記DUTの第2及び第3の端子の電圧が仮想の第2の電圧になるのに必要な電流を前記第2及び第3の端子にそれぞれ流して、前記第2及び第3の端子を前記仮想の第2の電圧にする工程と;
前記第1の交流電圧と、それぞれ前記仮想の第2の電圧にある前記第2及び第3の端子に流す前記電流とに基づいて前記DUTの電気的パラメーターを測定する工程
とから成る電気的パラメーター測定方法。 - 少なくとも3つの端子を有するDUTの電気的パラメーターを測定する方法であって、
前記DUTの第1の端子の電圧が仮想の第1の電圧になるのに必要な電流を前記第1の端子に流して、前記第1の端子を前記仮想の第1の電圧にする工程と;
前記DUTの第2及び第3の端子が第2の交流電圧になるのに必要な駆動電圧を印加して前記第2及び第3の端子を前記第2の交流電圧にする工程と;
前記第1の端子に流す前記電流と、前記第2及び第3の端子の前記第2の交流電圧とに基づいて前記DUTの電気的パラメーターを測定する工程
とから成る電気的パラメーター測定方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/758,940 US7586314B2 (en) | 2007-06-06 | 2007-06-06 | Multi-pin CV measurement |
US11/758,940 | 2007-06-06 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008304458A JP2008304458A (ja) | 2008-12-18 |
JP4915701B2 true JP4915701B2 (ja) | 2012-04-11 |
Family
ID=40095284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008138071A Expired - Fee Related JP4915701B2 (ja) | 2007-06-06 | 2008-05-27 | 被測定物の電気的パラメーターを測定する方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7586314B2 (ja) |
JP (1) | JP4915701B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8547120B1 (en) * | 2009-05-13 | 2013-10-01 | Keithley Instruments, Inc. | High speed AC current source |
US8577316B2 (en) * | 2009-09-30 | 2013-11-05 | Silicon Laboratories Inc. | Mechanically tuned radio utilizing ratiometric time measurements and related methods |
US10060968B2 (en) * | 2016-08-26 | 2018-08-28 | Teradyne, Inc. | Combining current sourced by channels of automatic test equipment |
CN110596559B (zh) * | 2019-10-12 | 2021-08-03 | 积成电子股份有限公司 | 一种基于分时接地多平衡桥的直流母线和馈线监测方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63246681A (ja) * | 1987-04-01 | 1988-10-13 | Manabu Koda | 多数の電子部品のインピ−ダンスを同時に測定する装置 |
JP3269459B2 (ja) * | 1998-07-28 | 2002-03-25 | 日本電気株式会社 | Misfetのオーバラップ長の測定方法、測定装置、抽出プログラムを記録した記録媒体 |
US6906548B1 (en) * | 2000-11-02 | 2005-06-14 | Tokyo Electron Limited | Capacitance measurement method of micro structures of integrated circuits |
US6717415B2 (en) * | 2002-02-05 | 2004-04-06 | Logicvision, Inc. | Circuit and method for determining the location of defect in a circuit |
US6646462B1 (en) * | 2002-06-24 | 2003-11-11 | Advanced Micro Devices, Inc. | Extraction of drain junction overlap with the gate and the channel length for ultra-small CMOS devices with ultra-thin gate oxides |
US6812730B2 (en) * | 2003-03-13 | 2004-11-02 | Advanced Micro Devices, Inc. | Method for independent measurement of mosfet source and drain resistances |
US6885214B1 (en) * | 2003-10-20 | 2005-04-26 | Taiwan Semiconductor Manufacturing Company | Method for measuring capacitance-voltage curves for transistors |
TW200641373A (en) * | 2005-04-28 | 2006-12-01 | Agilent Technologies Inc | System for measuring FET characteristics |
KR100671742B1 (ko) * | 2006-01-12 | 2007-01-19 | 삼성전자주식회사 | 전계 효과 트랜지스터의 유효 채널 길이 및 오버랩 길이추출 방법. |
JP4800892B2 (ja) * | 2006-09-28 | 2011-10-26 | アジレント・テクノロジーズ・インク | 補正係数取得方法およびインピーダンス測定装置 |
US7528645B2 (en) * | 2007-09-13 | 2009-05-05 | Infineon Technologies Ag | Temperature dependent clamping of a transistor |
-
2007
- 2007-06-06 US US11/758,940 patent/US7586314B2/en active Active
-
2008
- 2008-05-27 JP JP2008138071A patent/JP4915701B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7586314B2 (en) | 2009-09-08 |
US20080303535A1 (en) | 2008-12-11 |
JP2008304458A (ja) | 2008-12-18 |
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