JP4914085B2 - Substrate processing apparatus, exhaust trap apparatus, and semiconductor device manufacturing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a method for manufacturing a semiconductor device for forming a thin film such as a silicon oxide film, a silicon nitride film, and an amorphous silicon thin film on the surface of a substrate, and more specifically, a reaction by-product from a substrate processed gas. The present invention relates to a substrate processing apparatus provided with an exhaust trap for collecting products and the like, and a method for manufacturing a semiconductor device.

FIG. 10 is an explanatory view of a conventional substrate processing apparatus for manufacturing a semiconductor device or the like.
As shown in the figure, the substrate processing chamber 3 of the substrate processing apparatus 1 is partitioned into a dome-like cylinder by a reaction tube 4 made of quartz, and from a gas supply tube 13 connected to the lower part of the reaction tube 4. A substrate processing gas is introduced into the substrate processing chamber 3. Further, a gas exhaust pipe 14 is connected to the lower part of the reaction tube 4 so that the substrate processed gas generated by the reaction in the substrate processing chamber 3 is exhausted, and the gas exhaust pipe 14 is exhausted. Is connected to a vacuum pump 11 as a vacuum exhaust device via an exhaust pipe 231. The exhaust pipe 231 is provided with an exhaust trap 8 on the upstream side of the vacuum pump 11, and the substrate processing gas exhausted from the reaction tube 4, that is, the substrate processing chamber 3 by the exhaust trap 8. Residual components are removed from the water. The exhaust pipe 231 is provided with an upstream valve 9 on the upstream side of the exhaust trap 8 and a downstream valve 10 on the downstream side so that the exhaust trap 8 can be attached and detached. Further, the gas exhaust pipe 14 and the exhaust pipe 231 are all supplied to the exhaust trap 8 while preventing residual components in the substrate-treated gas exhausted from the reaction pipe 4, that is, reaction by-products, from adhering. For this purpose, a piping heater 16 is attached. The piping heater 16 is formed of a planar heater such as a ribbon heater, for example, and is wound around the exhaust pipe 231 and the gas exhaust pipe 14 so that the range from the connection portion with the reaction tube 4 to the exhaust trap 8 is a heating range.

  The apparatus for loading and unloading the substrate (wafer) 23 into and from the reaction tube 4 includes a boat 12 on which a plurality of substrates are mounted and a boat elevator (not shown) for loading and unloading the boat 12 into and from the reaction tube 4. The boat elevator is disposed below the reaction tube 4 in the vertical direction, and the boat 12 is transferred to the boat elevator. A flange (not shown) as a lid for opening and closing the opening of the reaction tube 4 is provided at the lower portion of the boat 12, and the flange is in close contact with the peripheral edge of the opening of the reaction tube 4 and sealed. An O-ring (not shown) is provided as a sealing means.

When a film is formed on the substrate 23 by the substrate processing apparatus 1, the boat 12 is transferred to the boat elevator, and the substrate 23 is inserted into the reaction tube 4 together with the boat 12 by raising the boat elevator. In this state, the temperature and pressure in the substrate processing chamber 3 are adjusted, and then the substrate processing gas is supplied to the substrate processing chamber 3. The substrate processing gas reacts by heating, and the film forming component generated by the reaction is deposited on the surface of the substrate 23.
For example, when a mixed gas of SiH ₂ Cl ₂ and NH ₃ is supplied to the substrate processing chamber 3 as the substrate processing gas, the reaction of the following formula (1) occurs in the substrate processing chamber 3, and the surface of the substrate 23 is Is a reaction product and Si ₃ N ₄ (silicon nitride), which is a film forming component, is deposited.

3SiH ₂ Cl ₂ + 4NH ₃ → Si ₃ N ₄ + 6HCl + 6H ₂ (1)

HCl generated by the reaction is combined with NH ₃ (ammonium) to form NH ₄ Cl (ammonium chloride) by the secondary reaction of the following formula (2), and this is combined with other reaction components as a reaction product or the like as a gas discharge pipe. 14 to the exhaust trap 8 through the exhaust pipe 231. The exhaust trap 8 collects primary components generated by the reaction, reaction byproducts due to side reactions between the primary components, and surplus unreacted components (hereinafter referred to as reaction byproducts) from the substrate-treated gas. .

NH ₃ + HCl → NH ₄ Cl (2)

  When performing maintenance of the exhaust trap 8, the upstream valve 9 and the downstream valve 10 are fully closed, the exhaust trap 8 is disconnected from the exhaust pipe 231, and maintenance such as cleaning is performed.

11 to 14 show the structure of the exhaust trap 8.
As shown in FIG. 11, the casing 8a of the exhaust trap 8 includes an outer pipe 8b having a diameter larger than the outer diameter of the exhaust pipe 231, and an inner pipe 8c inserted into the outer pipe 8b in a double-pipe manner. These end pipes 8b and 8e are attached to both end portions of the outer pipe 8b and the inner pipe 8c. A gas introduction pipe 55 that penetrates the outer pipe 8b and the inner pipe 8c in the radial direction and communicates with the inner pipe 8c is fixed to the casing 8a by welding. A gas discharge pipe 56 communicating with the inside of the pipe 8c is fixed by welding.
In addition, the outer tube 8b of the exhaust trap 8 has a cooling chamber (jacket chamber) 8f between the outer tube 8b and the inner tube 8c so that reaction by-products are deposited on the inner surface of the inner tube 8c. A cooling water introduction pipe 19 and a cooling water discharge pipe 20 are connected to each other.
Further, in order to remove reaction by-products and the like by the cooling surface as in the inner pipe 8c, a trap body 17 is built in the inner pipe 8c. As shown in FIG. 10, the trap body 17 is attached to an end plate 17b, and is configured to be attached to and detached from the inner tube 8c by attaching and removing the end plate 17b.

Next, the structure of the trap body 17 will be described with reference to FIGS. 11, 12, and 13. The trap body 17 is mainly composed of a spiral tube (cooling coil) 17a. The inlet portion 17a ₁ of the spiral tube 17a and an outlet portion 17a ₂ is not penetrate the end plate 17b in the thickness direction, it is fixed to the end plate 17b by welding.
The end plate 17b is a tapered flange that can be attached to and detached from a tapered flange 18a at one end of the exhaust trap 8 by coupling (JIS). The spiral shape has a large surface area compared to a straight tube and has many opportunities to come into contact with reaction byproducts, and therefore has an advantage that more reaction byproducts can be recovered by precipitation due to cooling.

However, the insert the trap body 17 to the inner tube 8c of the exhaust trap 8, through the cooling water of the cooling water circulating device from the inlet portion 17a ₁ of the spiral tube 17a to the outlet portion 17a _2, actually, the reaction of the substrate processing apparatus 1 When the by-products and the like are collected, as shown in FIG. 11, the reaction by-products and the like are converted into the vicinity of the gas introduction port X of the gas introduction pipe 55 of the exhaust trap 8 and the one end plate 8d side Y of the spiral tube 17a. In some cases, the gas traps in a concentrated manner, and clogging may occur on the upstream side of the exhaust trap 8.
Therefore, the flow of the substrate-treated gas in the exhaust trap 8 is simulated and the cause is analyzed. The results are shown in FIG. In FIG. 14, the direction of the arrow indicates the gas flow direction, and the length of the arrow indicates the speed. The longer the arrow is, the faster the flow rate of the substrate-treated gas is, and the shorter the arrow, the slower the flow rate.

<Simulation results>
(1) When the substrate-treated gas is introduced into the exhaust trap 8 from the gas introduction pipe 55, the flow of the substrate-treated gas first flows toward the one end plate 8d in the vicinity of the connection portion with the inner pipe 8c of the casing 8a. After changing the direction and then changing the direction to the opposite side at the inlet of the spiral tube 17a, the direction is changed again in the vicinity of the connecting portion with the gas discharge pipe 56, and the downstream exhaust pipe (hereinafter referred to as the downstream exhaust pipe). ) It is discharged to 231b.
(2) The speed of the substrate processed gas is slow in the vicinity of the connecting portion between the gas introduction pipe 55 and the inner pipe 8c and the inlet side of the spiral tube 17a, and is stagnant as a flow.
As a result of this simulation (1) and (2), and (a) reaction by-products, etc., once deposited, they have the property of being easily deposited on the precipitation surface, and (b) contact time (retention time) on the cooling surface When the time) increases, the amount of precipitation of reaction by-products increases, and conversely, when the contact time decreases, the amount of precipitation of reaction by-products also decreases. In the exhaust trap 8, since the flow velocity in the vicinity of the connecting portion between the gas introduction pipe 55 and the inner pipe 8c of the exhaust trap 8 and the inlet side of the spiral tube 17a is considerably slow and the contact time (residence time) is long, the substrate-treated gas Most of the reaction by-products contained in the sample are deposited at these two locations, and the downstream of the spiral tube 17a is capable of collecting the reaction by-products etc. even if it has the ability to collect the reaction by-products. Collection It is estimated that could not be substantially involved against.
In addition, as a related technology of this type of exhaust trap, a configuration in which a cartridge is constituted by a water-cooled tube and a collecting member is known (Patent Document 1).
JP-A-9-202972

As described above, the conventional exhaust trap can collect reaction by-products and the like well, but there is a problem that the reaction by-products and the like are clogged due to stagnation of the flow.
Therefore, there is a technical problem to be solved in order to prevent clogging and collect reaction by-products and the like in the entire exhaust trap, and the present invention aims to solve this problem. And

  The first means includes a substrate processing chamber, a gas supply pipe for supplying a substrate processing gas to the substrate processing chamber, a first exhaust pipe for exhausting a substrate processed gas from the substrate processing chamber, and the first A substrate-treated gas is introduced from a gas inlet connected to an exhaust pipe, and an exhaust trap that removes components contained in the substrate-treated gas and a gas that removes components in the substrate-treated gas from the exhaust trap A second exhaust pipe for exhausting, and the exhaust trap includes a baffle plate substantially perpendicular to an introduction direction of the substrate-treated gas from the gas introduction port, and the substrate treatment introduced from the gas introduction port. A plurality of rectifying plates disposed so as to change the sizes of the substrate-treated gas flow paths through which the substrate-treated gas after the baffle plate collision passes, and rectify the spent gas to flow in the direction of the baffle plate Have It is intended.

  Here, the “substrate processed gas” refers to a gas generated by the substrate processing, and refers to a gas discharged from the substrate processing chamber to the exhaust trap through the first exhaust pipe.

  “Components contained in the substrate-treated gas” are a primary component (primary product) generated by a reaction during substrate processing, a reaction by-product (secondary component) generated by a secondary reaction, And the surplus unreacted component which could not contribute directly to reaction.

Further, “substantially vertical” means an angle in the vicinity including vertical.
Further, “a first exhaust pipe for exhausting a substrate-treated gas, an exhaust trap for removing components contained in the substrate-treated gas introduced from the first exhaust pipe, and a substrate-treated gas from the exhaust trap. The expression “second exhaust pipe for exhausting the gas from which the components are removed” includes a form in which an exhaust trap is interposed in the exhaust pipe.

According to the first means, the substrate-treated gas introduced into the exhaust trap from the first exhaust pipe (upstream exhaust pipe) has high energy at a high temperature, and the flow rate between the baffle plates is low. There is no member to lower. For this reason, reaction byproducts in the substrate-treated gas do not adhere to the gas inlet of the exhaust trap.
In the exhaust trap, there is a baffle plate that is substantially perpendicular to the flow direction of the substrate-treated gas, and the substrate-treated gas that collides with the baffle plate is formed by a plurality of rectifying plates. Since the substrate-treated gas passes through the different-sized substrate-treated gas flow paths, the flow rate of the substrate-treated gas is slowed down in the different-sized flow paths, and as a result, the reaction contained in the substrate-treated gas. By-products and the like are deposited on the baffle plate and each rectifying plate.

The second means is to exhaust the substrate processed gas from the substrate processing chamber while supplying the substrate processing gas to the substrate processing chamber to process the substrate accommodated in the substrate processing chamber, When introducing into the exhaust trap and removing the components contained in the substrate-treated gas in the exhaust trap, the substrate-treated gas introduced from the gas inlet of the exhaust trap is introduced from the gas inlet. A baffle plate substantially perpendicular to the direction of introduction of the substrate-treated gas, and the substrate-treated gas introduced from the gas inlet are rectified so as to flow in the direction of the baffle plate, and after the baffle plate collision A component in the substrate-treated gas is removed by contacting a plurality of rectifying plates arranged so as to vary the size of the flow path through which the substrate-treated gas passes.
If it does in this way, like the 1st means, the reaction by-product etc. in substrate processing gas will be collected by a baffle plate and a plurality of baffle plates.

In summary, according to the present invention, the following excellent effects are exhibited.
By collecting reaction by-products and the like by the baffle plate and the plurality of rectifying plates in the exhaust trap, it is possible to prevent local clogging of the exhaust trap. Products and the like can be collected.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, exemplary embodiments of the invention will be described with reference to the accompanying drawings. In the following embodiments, SiH ₂ Cl ₂ and NH ₃ are used as the substrate processing gas, and a Si ₃ N ₄ film is formed on the surface of a silicon substrate (hereinafter referred to as a wafer) by a CVD process. The present invention is applied to various processing apparatuses and methods for removing reaction by-products and the like by bringing the treated gas generated by the treatment into contact with a cooling surface and precipitating reaction by-products and the like. Further, the same components as those of the conventional technology are denoted by the same reference numerals and detailed description thereof is omitted.
In the present embodiment, the quantity, material, material, and shape are merely examples unless the present invention is specified thereby.

First, a low-pressure CVD processing furnace will be described as an example of a substrate processing apparatus (semiconductor manufacturing apparatus) according to the present invention with reference to FIG.
FIG. 1 is a longitudinal sectional view of a low pressure CVD processing furnace (hereinafter referred to as a processing furnace). An outer tube (hereinafter referred to as an outer tube) 205 of the processing furnace 200 is made of, for example, a heat-resistant material such as quartz (SiO ₂ ), and is formed in a cylindrical shape having an upper end closed and an opening at the lower end. Has been. An inner tube (hereinafter referred to as an inner tube) 204 is formed in a cylindrical shape having openings at both ends of an upper end and a lower end, and is disposed concentrically within the outer tube 205. The outer tube 205 and the inner tube 204 define a cylindrical space 250 from each other. The gas rising from the upper opening of the inner tube 204 passes through the cylindrical space 250 and is exhausted from the exhaust pipe 231.

  A manifold 209 made of, for example, stainless steel is engaged with the lower ends of the outer tube 205 and the inner tube 204, and the outer tube 205 and the inner tube 204 are held by the manifold 209. The manifold 209 is fixed to holding means (hereinafter referred to as a heater base) 251. An annular flange is provided at each of the lower end portion of the outer tube 205 and the upper opening end portion of the manifold 209, and an O-ring 220 is disposed between these flanges as an airtight member (seal member). Hermetically sealed.

  A disc-shaped lid (hereinafter referred to as a seal cap) 219 made of, for example, stainless steel is detachably attached to the lower end opening of the manifold 209 through an O-ring 220 so as to be hermetically sealed. A gas supply pipe 232 is provided in the seal cap 219 so as to penetrate therethrough. Through these gas supply pipes 232, a substrate processing gas for processing is supplied into the outer tube 205. These gas supply pipes 232 are connected to gas flow rate control means (hereinafter referred to as mass flow controller (hereinafter referred to as MFC 241)). The MFC 241 is connected to the gas flow rate control unit, and can control the flow rate of the supplied gas to a predetermined amount.

An exhaust connected to a pressure regulator (for example, APC, N ₂ ballast controller (hereinafter referred to as “APC”)) 242 and a vacuum exhaust device (hereinafter referred to as “vacuum pump”) 246 is disposed above the manifold 209. A pipe 231 is connected, the gas flowing through the cylindrical space 250 between the outer tube 205 and the inner tube 204 is discharged, and the pressure in the outer tube 205 is controlled by the APC 242 so that a reduced pressure atmosphere of a predetermined pressure is obtained. Therefore, the pressure in the cylindrical space 250 is detected by a pressure detection means (hereinafter referred to as a pressure sensor) 245 and controlled by the pressure control unit.

  The seal cap 219 is connected to a rotating means (hereinafter referred to as a rotating shaft) 254, and a substrate holding means (hereinafter referred to as a boat) 217 and a substrate (hereinafter referred to as a wafer) held on the boat 217 by the rotating shaft 254. Rotate W. The seal cap 219 is connected to an elevating means (hereinafter referred to as a boat elevator) 115 and elevates the boat 217. A drive control unit is provided to control the rotating shaft 254 and the boat elevator 115 at a predetermined speed.

  A heating means (hereinafter referred to as a heater) 207 is formed concentrically on the outer periphery of the outer tube 205. The heater 207 detects the temperature by a temperature detection means (hereinafter, thermocouple) 263 so that the temperature in the outer tube 205 is a predetermined processing temperature, and is controlled by a temperature control unit (not shown).

  As shown in FIG. 1, an example of a low pressure CVD processing method using the processing furnace 200 will be described. First, the boat 217 is lowered by the boat elevator 115. A plurality of wafers W are held on the boat 217. Next, the temperature in the outer tube 205 is raised to a predetermined processing temperature by heating the heater 207. The outer tube 205 is filled with an inert gas in advance by the MFC 241 connected to the gas supply pipe 232, the boat 217 is raised by the boat elevator 115, and the boat 217 is inserted into the outer tube 205. Is maintained at a predetermined processing temperature. After evacuating the outer tube 205 to a predetermined degree of vacuum, the boat 217 and the wafer W held on the boat 217 are rotated by the rotating shaft 254. At the same time, the substrate processing gas is supplied from the gas supply pipe 232. The supplied substrate processing gas rises in the outer tube 205 and is uniformly supplied to the wafer W.

  The outer tube 205 during the low pressure CVD process is evacuated through the exhaust pipe 231 and the pressure is controlled by the APC 242 so as to be a predetermined vacuum, and the low pressure CVD process is performed for a predetermined time. The exhaust pipe 231 is divided into an upstream exhaust pipe 231a and a downstream exhaust pipe 231b, which are connected via an exhaust trap 49 described later.

  When the low-pressure CVD process is completed in this way, the substrate-treated gas in the outer tube 205 is replaced with an inert gas and the pressure is changed to normal pressure, and then the pressure is changed to normal pressure. The boat 217 is lowered by the boat elevator 115, and the boat 217 and the processed wafer W are taken out from the outer tube 205. The processed wafer W on the boat 217 taken out from the outer tube 205 is replaced with an unprocessed wafer W, and is again raised into the outer tube 205 in the same manner as described above, and the low pressure CVD process is performed.

In the processing furnace 200 of the present embodiment, film formation conditions in the case of forming a film on the surface of a wafer having a diameter of 200 mm are exemplified.
(1) In the formation of the Si ₃ N ₄ film,
Wafer temperature (600-800 ° C),
Gas type and supply amount
SiH ₂ Cl ₂ (flow rate: 0.05 to 0.2 l / min),
NH ₃ (flow rate: 0.5-2 l / min),
The processing pressure is (30 to 500 Pa),
The deposit is NH ₄ Cl (ammonium chloride).
(2) Moreover, in the film formation of Si (O ₂ CH) ₄ film (tetraethyl tetrasilicate; TEOS),
Wafer temperature (600-750 ° C),
Gas type and supply amount
O ₂ (flow rate: 0.001 to 0.01 l / min),
TEOS (flow rate: 0.1-0.5 l / min),
The processing pressure is (50 to 200 Pa).

  Next, the exhaust trap 49 according to the substrate processing apparatus of the present invention will be described with reference to FIGS. The exhaust trap 49 is interposed between the upstream exhaust pipe 231a (first exhaust pipe) and the downstream exhaust pipe 231b (second exhaust pipe), as described with reference to FIG. Is done.

FIG. 2 is a perspective view of the exhaust trap 49, and reference numeral 50 denotes a casing.
As shown in FIG. 2, the casing body 52 of the exhaust trap 49 is formed in a cylindrical shape, and an end plate 53 is attached to one end of the casing body 52 in the axial direction by a plurality of claw clamps 62. A gas discharge pipe 56 is attached to the other end of the casing main body 52 through the end plate 54 in order to discharge the purified gas such as the substrate-treated gas. Is provided with a gas introduction pipe 55 for introducing a substrate-treated gas or the like. A tapered flange 15 is fixed to the upstream end of the gas introduction pipe 55 so as to connect to the upstream exhaust pipe (first exhaust pipe) 231a. A taper flange 15 is fixed to connect to the downstream exhaust pipe (second exhaust pipe) 231b. One end plate 53 is provided with a handle 63 for easy handling.

  FIG. 3 is a cross-sectional perspective view of the exhaust trap 49 along the axial direction, and shows a state in which the trap body 57 is accommodated in the casing body 52. As shown in FIG. 3, the trap body 57 extends from one end side to the other end side in the casing body 52 and crosses the substrate-treated gas introduced from the gas introduction port 55 a of the gas introduction pipe 55. Reaction by-products and the like are collected. Further, the cooling chamber described in the section of the prior art is removed from the casing body 52.

  FIG. 4 is a cross-sectional view of the exhaust trap 49 along the axial direction, and FIG. 5 is a perspective view showing the appearance of the trap body 57. 4 and 5, the trap body 57 includes a cooling pipe 58 supported by the one end plate 53, a baffle plate 59 supported by the cooling pipe 58, and a plurality of rectifying plates 60A and 60B. , 60C (described later), the cooling pipe 58 is supported by one end plate 53 by welding, and the baffle plate 59 is supported by the cooling pipe 58 via a bracket 61.

6 is a cross-sectional view of the trap body 57, and corresponds to the AA cross section of FIG. 5A, the BB cross section of FIG. 5B, and the CC cross section of FIG.
As shown in FIGS. 5 and 6, the cooling pipe 58 includes two pipe members 58 a and 58 a arranged side by side on the one end plate 53, inside the pipe members 58 a and 58 a and at a predetermined height lower. Two pipe members 58b, 58b arranged on the pipes, joint pipes 58c, 58d (see FIG. 6A) for connecting the tip ends of the pipe members 58a, 58a and the tip parts of the pipe members 58b, 58b, It is comprised from the joint pipe 58e (refer FIG.6 (c)) which connects the rear-end parts of the piping members 58b and 58b.
For connecting the distal ends of the piping members 58a and 58a and the distal ends of the piping members 58b and 58b, as shown in FIG. 3, FIG. 5 and FIG. However, an L-shaped tube may be used.
One of the two outer pipe members 58a and 58a of the cooling pipe 58 is connected as a cooling water introduction pipe and the other is connected as a cooling water discharge pipe to a cooling medium circulation device such as a chiller unit.

  As shown in FIGS. 3 and 6, the baffle plate 59 has an arc shape so as to form a concave surface 59a facing the gas introduction port 55a, and on both sides thereof in the width direction as shown in FIG. The extended flanges 65 and 65 are connected. Since the depth, width, and length (that is, capacity) of the concave surface 59a are determined in advance based on the processing amount of the substrate-processed gas up to a predetermined maintenance cycle, the maintenance cycle becomes longer than before, and the reaction The recovery amount of by-products etc. increases.

Further, as shown in FIG. 5, the baffle plate 59 and the flanges 65, 65 extend from one end portion to the other end portion of the baffle plate 59 while being attached to the piping members 58 a, 58 a. 6, 65 are in direct contact with the two outer pipe members 58 a, 58 a, and the inner pipe members 58 b, 58 b are close to the concave surface 59 a of the baffle plate 59.
Then, the baffle plate 59 is formed on the casing main body 52 with respect to the substrate-treated gas introduced from the gas introduction pipe 55 in the radial direction on the opposite side of the gas introduction pipe 55 with the piping member 58a as the center. The outer two piping members 58a and 58a are fixed so as to be substantially perpendicular to the flow direction. As a result, when a cooling medium such as chiller water or cooling water is passed through the cooling pipe 58, the baffle plate 59 is cooled, and cooling for cooling the substrate processing gas around the cooling pipe 58 and around the baffle plate 59. Since the atmosphere is formed, the substrate-treated gas is cooled when traversing these cooling atmospheres, and reaction by-products contained in the substrate-treated gas mainly include the surface of the cooling pipe 58 and the baffle plate 59. Deposited on the concave surface 59a.
Further, as shown in FIG. 4, a flow path 72 is formed between the end plate 53 side end face of the baffle plate 59 and the end plate 53, and the substrate processing gas is blown through the gas discharge pipe 56. In order to prevent this, the partition wall 68 is provided on the gas discharge pipe 56 side of the baffle plate 59, and the partition wall 69 having a semicircular cross section is fixed to the partition wall 68 so as to cover at least the upper half of the gas discharge pipe 56. Has been.
The gas exhaust pipe 56 removes clean exhaust gas after removing residual by-products from the flow path 74 formed between the back surface of the baffle plate 59, which is the side surface opposite to the concave surface 59 a, and the inner surface of the casing body 52. The substantially lower half on the side opposite to the partition wall 69 is cut away.

  Next, the rectifying plate will be described with reference to FIGS. 4 to 6. The rectifying plate includes three types of rectifying plates 60 </ b> A, 60 </ b> B, and 60 </ b> C having different sizes (hereinafter, the first rectifying plate 60 </ b> A and the second rectifying plate). 60B, also referred to as third rectifying plate 60C).

As shown in FIG. 6A, the first rectifying plate 60A has a shape in which a part of an annular plate-shaped member whose outer peripheral edge is substantially the same diameter as the concave surface 59a of the baffle plate 59, Specifically, a semicircular C-ring portion 60A1 whose outer peripheral edge is substantially the same diameter as the concave surface 59a of the baffle plate 59, and extending portions 60A2 and 60A2 extending tangentially from both ends of the C-ring portion 60A1. It has a shape with. The first baffle plate 60A has the baffle plate in a state substantially orthogonal to the longitudinal direction of the baffle plate 59 by welding the outer edge portions of the extending portions 60A2 and 60A2 to the concave surface 59a of the baffle plate 59. 59 (see FIGS. 4 and 5).
Here, a space surrounded by the first rectifying plate 60A and the concave surface 59a corresponds to a “substrate-treated gas channel” in the claims, and hereinafter, this channel is referred to as the first channel. 73. Further, as shown in FIG. 4, five first rectifying plates 60 </ b> A are provided at equal intervals along the longitudinal direction of the baffle plate 59. And the set of these 5 1st rectifying plates 60A is arrange | positioned in the position facing the gas inlet 55a.

As shown in FIG. 6B, the second rectifying plate 60B has a shape contracted to the baffle plate 59 side with respect to the first rectifying plate 60A, specifically, the C ring portion 60A1 of the first rectifying plate 60A. It has a shape having a smaller C ring portion 60B1 (less than a semicircle) and extending portions 60B2 and 60B2 smaller than the extending portions 60A2 and 60A2 of the first rectifying plate 60A. And this 2nd baffle plate 60B is the longitudinal direction of the baffle plate 59 by welding the outer edge part of the extension part 60B2, 60B2 to the concave surface 59a of the baffle plate 59 similarly to the 1st baffle plate 60A. It is fixed to the baffle plate 59 so as to be substantially orthogonal.
Here, the space surrounded by the second rectifying plate 60B and the concave surface 59a corresponds to the “substrate-treated gas flow path” in the claims, and this flow path is hereinafter referred to as the second flow path. 74. As shown in FIG. 4, three second rectifying plates 60 </ b> B are provided at equal intervals along the longitudinal direction of the baffle plate 59. The set of the three second rectifying plates 60B is arranged at a position closer to the end plate 53 than the set of the five first rectifying plates 60A described above, and the interval between these sets is set to each first set. The intervals are substantially the same as the intervals between the rectifying plates 60A and the intervals between the second rectifying plates 60B.

As shown in FIG. 6C, the third rectifying plate 60C has a shape further contracted toward the baffle plate 59 than the second rectifying plate 60B, specifically, the C-ring portion of the second rectifying plate 60B. It is formed in a C ring shape smaller than 60A1. Then, the third rectifying plate 60C, like the first rectifying plate 60A and the second rectifying plate 60B, is welded to the concave surfaces 59a of the baffle plate 59 at the outer edges of both ends thereof, so that the length of the baffle plate 59 is increased. It is fixed to the baffle plate 59 so as to be substantially orthogonal to the direction.
Here, a space surrounded by the third rectifying plate 60C and the concave surface 59a corresponds to a “substrate-treated gas channel” in the claims, and hereinafter, this channel is referred to as a third channel. 75. Further, as shown in FIG. 4, four third rectifying plates 60 </ b> C are provided at equal intervals along the longitudinal direction of the baffle plate 59. The set of the four third rectifying plates 60C is arranged at a position closer to the end plate 53 than the set of the three second rectifying plates 60B described above, and the interval between these sets is set to each rectifying plate. The intervals are substantially the same as the intervals of 60A, 60B, and 60C.

That is, in the present embodiment, these first rectifying plates 60A, second rectifying plates 60B, and third rectifying plates 60C are erected substantially perpendicularly to the concave surface 59a, so that each of the rectifying plates 60A, 60B is first made. 60c, the substrate-treated gas is flowed (rectified) toward the concave surface 59a of the baffle plate 59, collides with the edges of the rectifying plates 60A, 60B, 60c and friction with the rectifying surfaces of the rectifying plates 60A, 60B, 60c. While decelerating at a predetermined speed by the loss, it collides with the concave surface 59a and flows down from the upstream side to the downstream side of the concave surface 59a, and the size of each flow path 73 to 75 through which the substrate processing gas passes is reduced from the upstream side to the downstream side. The substrate-treated gas that gradually decreases in size toward the side and flows from the upstream side to the downstream side along the concave surface 59a sequentially collides with the three types of rectifying plates 60A, 60B, and 60C having different sizes. And in, so that to decelerate the substrate treated gas flowing from the gas inlet 55a side to the end plate 53 side at a predetermined speed.
Accordingly, the substrate processed gas flowing along the concave surface 59a of the baffle plate 59 is adjusted in three stages of large, medium, and small from the upstream side to the downstream side in this embodiment, and the substrate processing gas is inversely proportional to the flow rate. The residence time of the spent gas on the concave surface 59a is adjusted in three stages from the upstream side to the downstream side: small, medium, and large.

  In the present embodiment, the number of each of the rectifying plates 60A, 60B, and 60C is set to 5, 3, and 4, respectively. However, the present invention is not limited to this, and any number may be used. Further, the size of each of the rectifying plates 60A, 60B, 60C and the interval between them can be arbitrarily set. Further, in the present embodiment, the substrate-treated gas flow path is formed by the rectifying plates 60A, 60B, 60C and the baffle plates 59 that are substantially C-shaped in plan view, but the present invention is not limited to this. Absent. For example, by providing one or a plurality of holes in the rectifying plates 60A, 60B, 60C fixed to the concave surface 59a of the baffle plate 59, the holes may be used as a substrate-treated gas flow path, or a plurality of rectifying plates may be A substrate processed gas flow path may be provided between each baffle plate and the baffle plate by providing the plate 59 with an appropriate distance from the concave surface 59a. Further, the “substrate processed gas flow path” does not mean a flow path through which only the substrate processed gas after the baffle plate collision passes, but at least a part of the substrate processed gas after the baffle plate collision passes. If there is, a part of the substrate-treated gas before the baffle collision may pass therethrough.

Next, the operation of the exhaust trap 49 will be described.
Substrate processed gas generated by the low pressure CVD process includes unreacted components that did not participate in the reaction, primary products generated by the reaction, and reaction by-products due to secondary reactions (side reactions) between the primary products. Things are included.
For example, in the case of film formation of silicon nitride, when a mixed gas of dichlorosilane (SiH ₂ Cl ₂ ) and ammonia (NH ₃ ) is used as a reaction gas, the following reaction occurs by heating, and silicon nitride is deposited on the surface of the wafer W. accumulate.

3SiH ₂ Cl ₂ + 4NH ₃ → Si ₃ N ₄ + 6HCl + 6H ₂

Simultaneously with the formation of silicon nitride, hydrogen chloride is generated, and hydrogen chloride combines with ammonia by the following side reaction to generate ammonium chloride (NH ₄ Cl) as a reaction by-product.
NH ₃ + HCl → NH ₄ Cl

The inside of the outer tube 205 is exhausted through the downstream exhaust pipe 231b by the vacuum pump 11, and the substrate-treated gas containing reaction byproducts such as ammonium chloride is exhausted to the upstream exhaust pipe 231a.
As described above, the upstream side of the exhaust trap 49 is heated by the piping heater 16 (see FIG. 10), and is kept at a predetermined temperature, so that ammonium chloride does not adhere by cooling.
In addition, the high-temperature substrate-treated gas containing reaction byproducts and the like passes through the upstream exhaust pipe 231a and is introduced into the casing main body 52 from the gas introduction pipe 55 of the exhaust trap 49. The casing main body 52 does not have a cooling structure as in the prior art, and the substrate-treated gas has a high velocity energy and is in a high temperature state, so that reaction by-products and the like in the substrate-treated gas are introduced into the gas. After being introduced into the casing body 52 as it is without adhering to the pipe 55 and the gas inlet 55a, it is rectified by the rectifying plates 60A, 60B, 60C, and thereafter formed by the cooling pipe 58 and the baffle plate 59. It will collide with the baffle plate 59 across the cooling atmosphere. Here, when the rectifying plates 60A, 60B, and 60C are not installed, (1) the flow rate of the substrate-treated gas becomes higher than necessary, and cooling at the first stage becomes insufficient. The amount of residual by-products collected on the cooling pipe 58 and the concave surface 59a of the baffle plate is reduced. (2) Since the flow of the substrate-treated gas cannot be rectified with respect to the baffle plate 59 or the cooling atmosphere, There is a risk that problems such as difficulty in capturing residual by-products and the like with the entire baffle plate may occur.
Therefore, for rectification and speed adjustment on the concave surface 59a, as shown in FIG. 8, a plurality of C-rings having the same size are provided between the gas inlet 55a and the baffle plate 59 and close to the baffle plate 59. As shown in the flow simulation diagram of FIG. 9, the flow rate of the substrate processing gas on the concave surface 59a is assumed to be constant. The
However, even in this case, if the flow velocity on the concave surface 59a is too high, the time until it reaches the downstream side from the upstream side is short, and the residence time is short. There is a risk that the recovery amount of reaction by-products and the like will decrease. Further, since the collision with the end plate 53 occurs at a high flow rate, reaction by-products and the like are likely to be deposited on the end plate 53. When the reaction by-product or the like becomes thick, it cracks and suddenly peels off. There is a possibility that the reaction by-products and the like that have been peeled off may cause a failure due to a sudden load applied to a vacuum pump or the like provided on the downstream side.

Therefore, in the present embodiment, as shown in FIG. 4, a set of the first rectifying plate 60A is arranged facing the gas inlet 55a formed on the side opposite to the gas outlet 55C side, and downstream thereof. A set of the second rectifying plate 60B and a set of the third rectifying plate 60C are sequentially arranged on the side, and the substrate has been processed to pass through the first flow path 73 between the inner peripheral surface of the set of the first rectifying plate 60A and the concave surface 59a. The gas is attenuated by sequentially colliding with the rectifying surfaces of the set of the second rectifying plate 60B and the set of the third rectifying plate 60C.
For this reason, the substrate processed gas after colliding with the baffle plate 59 is gradually decelerated in the vicinity of the respective rectifying plates 60A, 60B, 60C, and then sequentially reduced in the flow paths 73 to 75 whose sizes are sequentially reduced. As a result, the reaction by-products and the like can be deposited almost uniformly on the entire concave surface 59. The first rectifying plate 60A, the second rectifying plate 60B, and the third rectifying plate 60C do not have a function as an orifice.
The process of decelerating, cooling, and depositing the substrate-treated gas will be described in detail as follows in this embodiment.

  (1) The substrate-treated gas introduced into the casing main body 52 from the gas introduction port 55a mainly collides with an edge on the downstream side of the first rectifying plate 60A and is subjected to first-stage attenuation. As shown in the simulation diagram of the flow of the substrate processing gas in FIG. 7, the speed is reduced by the friction between the first rectifying plates 60A and 60A after passing through the flow path 71 between the adjacent first rectifying plates 60A and 60A. The first rectifying plate 60A, 60A receives the first stage cooling due to the cooling atmosphere between the first rectifying plates 60A, 60A and the contact with the first rectifying plates 60A, 60A, and then the inner peripheral surface of the first rectifying plate 60A and the baffle plate 59 The second stage of cooling is received while passing through the cooling atmosphere between the concave surfaces 59a, and further, the second stage of attenuation is received by the collision with the concave surface 59a of the baffle plate 59. Thereafter, the substrate-treated gas advances toward the end plate 53 along the concave surface 59a. At this time, since the substrate-treated gas is cooled to a temperature at which at least residual by-products and the like can be precipitated, it is cooled by the cooling atmosphere of the flow path 73 in the first rectifying plate 60A, the cooling pipe 58 and the concave surface 59a. Precipitates mainly on the concave surface 59a in the first flow path 73, the surface of the cooling pipe 58, and the surface of the first rectifying plate 60A (recovery of residual by-products in the first stage). Reaction by-products and the like contained in the substrate plate-treated gas have the property of being easily deposited on the surface of the same reaction by-products and the like, and reaction by-products and the like attached to the cooling pipe 58 and the concave surface 59a Since the reaction by-products and the like once adhere to the cooling pipe 58 and the concave surface 59a of the baffle plate 59, the trapping performance of the reaction by-products and the like is substantially improved. Note that the downstream side edge of each of the rectifying plates 60A, 60B, 60 is always warmed by the collision of the substrate-treated gas in a high temperature state, so that reaction by-products and the like hardly adhere to each other. There is also an advantage that it is difficult to cause occlusion.

(2) After the recovery of the first-stage reaction by-products and the like, the substrate-treated gas is attenuated in the third stage due to the collision with the second rectifying plate 60B, decelerated, and then the second flow path 74. And the third stage of cooling by the concave surface 59a of the baffle plate 59. At this time, the flow rate of the substrate processing gas is lower than the flow rate of the second stage due to the collision with the concave surface 59a, and the residence time of the substrate processing gas in the second flow path 74 is increased. A residual by-product having a deposition amount equivalent to that while passing through the flow path 73 is deposited on the surface of the concave surface 59a facing the second flow path 74 on the downstream side, the cooling pipe 58, and the second rectifying plate 60B ( Recovery of residual by-products in the second stage).
(3) After the recovery of the second-stage reaction by-products and the like, the substrate-treated gas undergoes the fourth-stage attenuation due to the collision with the third rectifying plate 60C, and after decelerating, the third flow path 75. And the fourth stage of cooling by the concave surface 59a of the baffle plate 59. At this time, the flow rate of the substrate processed gas is lower than that in the second stage, and the residence time in the third flow path 75 is increased. As a result, residual by-products and the like equivalent to the first flow path 73 are deposited on the surfaces of the concave surface 59a facing the third flow path 75 on the downstream side, the cooling pipe 58, and the third rectifying plate 60C (the first flow path 73). Recovery of residual by-products in three stages).
(4) Since the flow rate of the substrate-treated gas is sufficiently reduced after the second stage reaction by-products are collected, the substrate-treated gas hardly collides with the end plate 53 thereafter. The air is exhausted outside through the flow paths 72 and 70.
(5) Therefore, even when the end plate 53 is cooled, residual by-products and the like do not adhere to the end plate 53.
(6) When reaction by-products and the like grow from the baffle plate 59 side over time and the flow paths 71 of the rectifying plates 60 and 60 are clogged, the substrate-treated gas is the end plate shown in FIG. Crossing the inside of the casing main body 52 along the flow path 72 between the third rectifying plate 60C on the 53 side and the casing main body 52, and a flow path 70 between the back surface of the baffle plate 59 and the inner surface of the casing main body 52. Along the gas discharge pipe 56. In such a process, the back surfaces of the third rectifying plate 60C and the baffle plate 59 serve as cooling surfaces, and reaction byproducts and the like are deposited. For this reason, even in such a case, the collection function with respect to the reaction by-product etc. as the exhaust trap 49 is maintained.
(7) Further, since the casing body 52 is not cooled and is heated by heat transfer from the substrate-treated gas, reaction by-products and the like are not deposited on the inner surface of the casing body 52. Therefore, even when the flow path 71 is blocked by the growth of reaction byproducts or the like, the reliability as the exhaust trap 49 for collecting the reaction byproducts or the like is maintained.

  As described above, the exhaust trap 49 according to the present embodiment copes with clogging of reaction by-products, and the recovery amount of the reaction by-products is significantly improved as compared with the prior art. Than the maintenance cycle. In addition, maintenance labor and cost are reduced, and ammonium chloride in the substrate-treated gas is almost completely removed by the exhaust trap 49, so that the maintenance frequency downstream of the exhaust trap 49 is significantly reduced.

When the predetermined maintenance period is reached, maintenance of the exhaust trap 49 is performed. In this case, first, the upstream side valve 9 and the downstream side valve 10 are fully closed to disconnect the inside of the outer tube 205 and the suction side of the vacuum pump 246 from the exhaust system (see FIG. 1), and the claw clamp 62 is removed and exhausted. The trap 49 is separated from the upstream side exhaust pipe 231a and the downstream side exhaust pipe 231b. Then, the trap body 57 is extracted from the exhaust trap 49, and maintenance such as cleaning, washing, and maintenance is performed. In this case, the trap body 57 is a cartridge that can be attached to and detached from the casing body 52, and the shape thereof is mainly composed of a cooling pipe 58 using a straight pipe and a curved baffle plate 59. Easy to clean. In addition, as described above, reaction by-products and the like are collected by the trap body 57 that is easy to attach and detach, and are not configured to be collected by the inner surface of the casing body 52 as in the past. Maintenance is greatly improved for cleaning and cleaning. In addition, the conventional double-pipe structure has been abolished, so it is excellent in manufacturability and maintenance.
In order to maintain the productivity of the substrate processing apparatus, when the apparatus, gas type, etc. are changed, or when the exhaust trap 49 itself such as a cooling pipe needs to be maintained, it is replaced with another exhaust trap 49. Of course, changes are made.

In the present embodiment, since the first flow path 73, the second flow path 74, and the third flow path 75 that are sequentially reduced in size from the upstream side to the downstream side are formed, the size is large. The middle and small first rectifying plate 60A, the second rectifying plate 60B, and the third rectifying plate 60C have been described from the upstream side to the downstream side, but in order to prevent part of the substrate-treated gas from being blown out, An extension portion (not shown) extending radially outward is provided at the outer peripheral edge of the second and third rectifying plates 60B and 60C on the side and downstream sides, and the substrate processing gas is supplied to the second rectifying plates 60B and 60B. It is also possible to prevent the substrate-treated gas from being blown out by guiding the flow path 71 between them and the flow path 71 between the third rectifying plates 60C and 60C.
In addition, although the explanation has been made that the speed and temperature of the substrate processing gas are adjusted stepwise by the first rectifying plate 60A to the third rectifying plate 60C, the flow velocity and the residence are between the inner peripheral surface and the concave surface 59a. You may make it arrange | position the set of the baffle plate for adjusting time.
When the gas introduction port 55a is formed so as to face the center in the longitudinal direction of the baffle plate 59, the set of the first rectifying plate 60A is arranged in the center in the longitudinal direction of the baffle plate 59, and the second rectifying plate 60B The set and the set of the third rectifying plate 60C may be arranged on the downstream side of the set of the first rectifying plate 60A, respectively, and on the downstream side, the flow rate, temperature, and residence time of the substrate processed gas are set. Based on this, a set of current plates may be arranged as in the embodiment. Even if it does in this way, compared with the case where the baffle plate 160 of the same magnitude | size is arrange | positioned as demonstrated in FIG. 9, the reaction by-product etc. can be collect | recovered uniformly by the whole concave surface 59a.
Further, by forming at least one hole in the concave surface of the baffle plate 59, the substrate-treated gas may flow toward the concave surface 59a.

  Hereinafter, the present invention will be described in another expression so that the present invention can be understood more clearly.

(A) The rectifying plates 60A, 60B, and 60C are provided with different sizes of the substrate-treated gas flow paths so as to attenuate the exhaust speed.
(B) The rectifying plates 60A, 60B, 60C are provided so as to reduce the size of the substrate-treated gas flow path downstream from the upstream side with respect to the flow direction of the substrate-treated gas after colliding with the baffle plate 59. It has been.
(C) A gas exhaust port 55c is provided on the second exhaust pipe (upstream exhaust pipe 231a) side of the exhaust trap 49, and partition walls 68 and 69 are provided between the gas introduction port 55a and the gas exhaust port 55c. The rectifying plates 60A, 60B, and 60C are provided on the partition walls 68 and 69 on the side substantially opposite to the gas exhaust port 55c side.
(D) A cooling pipe 58 is provided between the gas introduction port 55a and the baffle plate 59, and this cooling pipe 58 is provided near the baffle plate 59 in the space between the gas introduction port 55a and the baffle plate 59. Yes.
(E) The substrate processing apparatus includes a substrate processing chamber 3, a gas supply pipe 232 that supplies a substrate processing gas to the substrate processing chamber 3, and a first exhaust pipe that exhausts the substrate processed gas from the substrate processing chamber 3. The substrate-treated gas is introduced from the (upstream exhaust pipe 231a) and the gas inlet 55a connected to the first exhaust pipe (upstream-side exhaust pipe 231a), and components contained in the substrate-treated gas are removed. And a second exhaust pipe (downstream exhaust pipe 231b) for exhausting the gas from which the components in the substrate-treated gas have been removed from the gas exhaust port 55c of the exhaust trap 49. The size of the baffle plate 59 that is substantially perpendicular to the direction in which the substrate-treated gas is introduced from the gas introduction port 55a and the baffle plate 59 between the gas introduction port 55a and the baffle plate 59 are parallel to each other. If different A plurality of rectifying plates (first rectifying plate 60A~ third rectifying plate 60C) are provided which are arranged Te.

As described above, according to the above-described embodiment, the following excellent effects are exhibited.
(1) It is possible to prevent local blockage that hinders the flow of the substrate-treated gas, and the maintenance cycle of the exhaust trap 49 can be made longer than before.
(2) Since the maintenance cycle becomes longer, the productivity of the semiconductor device can be improved.
(3) Furthermore, the cooling pipe 58 is installed near the baffle plate away from the gas introduction port 55a and does not cause stagnation in the vicinity of the gas introduction port 55a. Thus, the gas inlet 55a is not clogged by precipitation of reaction by-products and the like.

The substrate processing apparatus according to the present invention is not limited to the substrate processing apparatus in the above-described embodiment, and can be applied to a single-wafer type substrate processing apparatus. The substrate processing apparatus according to the present invention can also be applied to a substrate-treated gas in which a reaction by-product or the like in the substrate-treated gas is crystallized or liquefied at a low temperature other than ammonium chloride. Of course, a coolant other than water, such as chiller water, can be used as the cooling medium.
Note that the rectifying plates 60A to 60C provide resistance to the substrate-treated gas and attenuate it, so that there is a plane in the same plane, and an extension line of the plane is directed to the concave surface 59a of the baffle plate 59. Just do it.
The casing body 52, baffle plate 59, cooling pipe 58, and rectifying plates 60A to 60C are preferably made of SUS304 and SUS316 having good corrosion resistance, thermal conductivity, and heat resistance.
In addition, when improving the maintainability of the end plate 53 by preventing the adhesion of the residual by-product to the end plate 53, the baffle plate 59 is appropriately extended to the end plate 53 side, and the baffle plate 59 is moved to the end plate 53 side. A partition wall may be provided at an end portion of the first rectifying plate 60 </ b> C appropriately spaced from the set of the first rectifying plate 60 </ b> C, and the flow path 72 may be formed between the partition wall and the end plate 53.
Thus, the present invention can be modified in various ways, and the present invention naturally extends to the modified invention.

It is a longitudinal cross-sectional view of the low pressure CVD processing furnace as a substrate processing apparatus which concerns on this invention. It is a perspective view which shows the external appearance of the exhaust trap which concerns on the substrate processing apparatus of this invention. It is a cross-sectional perspective view along the axial direction of the exhaust trap concerning the substrate processing apparatus of the present invention. It is sectional drawing of the axial direction of the exhaust trap which concerns on the substrate processing apparatus of this invention. It is a perspective view which shows the assembly state of the trap main body which concerns on the substrate processing apparatus of this invention. It is sectional drawing of a trap main body, and is AA sectional drawing (a) of FIG. 5, BB sectional drawing (b) of FIG. 5, and CC sectional drawing (c) of FIG. It is a figure which shows the result of the simulation of the flow in the state which installed the trap main body in the casing main body of the exhaust trap which concerns on the substrate processing apparatus of this invention. It is a cross-sectional perspective view which shows the structure of the trap main body of the exhaust trap as a comparative example with respect to the exhaust trap which concerns on this invention. It is a figure which shows the simulation result about the speed of the substrate processed gas of the exhaust trap of a comparative example. It is explanatory drawing of the conventional substrate processing apparatus. It is sectional drawing of the exhaust trap concerning the conventional substrate processing apparatus, and is a figure which shows the state of clogging with the reaction by-product etc. It is explanatory drawing which shows the state which took out the trap main body from the casing of the conventional exhaust trap. It is a cross-sectional perspective view which shows the structure of the trap main body of the exhaust trap which concerns on the conventional substrate processing apparatus. It is a figure which shows the simulation result about the speed of the substrate processing gas of the conventional exhaust trap.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 3 Substrate processing chamber 49 Exhaust trap 55 Gas introduction pipe 55a Gas introduction port 55c Gas exhaust port 56 Gas exhaust pipe 59 Baffle plate 59a Concave surface 60 Rectification plate 60A 1st baffle plate 60B 2nd baffle plate 60C 3rd baffle plate 65 Flange 68 Partition wall 73 First flow path (substrate processed gas flow path)
74 2nd flow path (substrate processed gas flow path)
75 3rd flow path (substrate processed gas flow path)
231 Exhaust pipe 231a Upstream exhaust pipe (first exhaust pipe)
231b Downstream exhaust pipe (second exhaust pipe)
232 Gas supply pipe

Claims (6)

A substrate processing chamber;
A gas supply pipe for supplying a substrate processing gas to the substrate processing chamber;
A first exhaust pipe for exhausting a substrate-treated gas from the substrate processing chamber;
An exhaust trap for removing a component contained in the substrate-treated gas, wherein a substrate-treated gas is introduced from a gas inlet connected to the first exhaust pipe;
A second exhaust pipe for exhausting the gas from which the components in the substrate-treated gas have been removed from the exhaust trap;
The exhaust trap includes
A baffle plate substantially perpendicular to the direction of introduction of the substrate-treated gas from the gas inlet,
The substrate-treated gas introduced from the gas inlet is rectified so as to flow in the direction of the baffle plate, and the size of the substrate-treated gas flow path through which the substrate-treated gas after the baffle plate collision passes is sequentially set. A substrate processing apparatus comprising: a plurality of current plates arranged to be reduced . The substrate processing apparatus according to claim 1, wherein the plurality of rectifying plates are configured by a plurality of sets that sequentially reduce a plurality of rectifying plates having the same size as a set. After the substrate processing gas exhausted from the substrate processing chamber to the first exhaust pipe is introduced from the first exhaust pipe to remove components contained in the substrate processing gas, the substrate processing gas is included in the substrate processing gas. An exhaust trap for exhausting the gas from which the components have been removed to the second exhaust pipe,
The exhaust trap includes
A baffle plate substantially perpendicular to the direction of introduction of the substrate-treated gas from the gas inlet,
The substrate-treated gas introduced from the gas inlet is rectified so as to flow in the direction of the baffle plate, and the size of the substrate-treated gas flow path through which the substrate-treated gas after the baffle plate collision passes is sequentially set. An exhaust trap apparatus comprising a plurality of rectifying plates arranged to be reduced. The exhaust trap device according to claim 3, wherein the plurality of rectifying plates are configured by a plurality of sets that sequentially reduce a plurality of rectifying plates having the same size as a set. The substrate processing gas is evacuated substrate processing gas from the substrate processing chamber while supplying processing the substrate contained in the substrate processing chamber the substrate processing chamber, the substrate processing gas, is introduced into the exhaust trap In removing the component contained in the substrate-treated gas in the exhaust trap,
The substrate-treated gas introduced from the gas introduction port of the exhaust trap, the baffle plate substantially perpendicular to the introduction direction of the substrate-treated gas from the gas introduction port, and the gas introduced from the gas introduction port While rectifying the substrate-treated gas to flow in the direction of the baffle plate,
A component in the substrate processed gas is removed by contacting with a plurality of rectifying plates arranged so as to sequentially reduce the size of the flow path through which the substrate processed gas passes after the baffle plate collision. A method for manufacturing a semiconductor device. 6. The method of manufacturing a semiconductor device according to claim 5, wherein the plurality of rectifying plates are configured by a plurality of sets that are sequentially reduced as a set of rectifying plates having the same size.

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