JP3894865B2 - Semiconductor manufacturing apparatus, cladding tube, and manufacturing method of semiconductor integrated circuit device - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor manufacturing apparatus. For example, in a method of manufacturing a semiconductor integrated circuit device (hereinafter referred to as an IC), various heat treatments are performed on a semiconductor wafer (hereinafter referred to as a wafer) on which an integrated circuit including semiconductor elements is formed. The present invention relates to a heat treatment apparatus (furnace) for performing (thermal treatment).
[0002]
[Prior art]
In an IC manufacturing method, a batch type vertical hot wall type low pressure CVD apparatus is widely used to deposit (deposit) silicon nitride (Si ₃ N ₄ ), silicon oxide (SiOx), polysilicon, or the like on a wafer. ing. A batch-type vertical hot wall type reduced pressure CVD apparatus (hereinafter referred to as a CVD apparatus) is composed of an inner tube that forms a processing chamber and an outer tube that surrounds the inner tube. A manifold connected to an exhaust pipe system and a gas introduction pipe for supplying gas to the processing chamber, a heater unit laid outside the process tube to heat the processing chamber, and a plurality of wafers aligned vertically. And a boat that holds and carries a plurality of wafers into the processing chamber from the furnace port at the lower end (boat loading), and the film forming gas enters the processing chamber from the gas introduction pipe As the process chamber is heated by the heater unit, a CVD film is deposited on the wafer. It is.
[0003]
In this type of conventional CVD apparatus, the remaining film deposition gas, by-products, and particles such as dust are deposited in places where the exhaust pipe system joints easily adhere to clog the exhaust pipe system. In order to prevent this, the gas inlet port is provided in the upstream portion of the place where the exhaust pipe joint easily adheres, and an anti-adhesion gas such as nitrogen gas is allowed to flow to prevent them from accumulating in the exhaust pipe system. Has been implemented.
[0004]
[Problems to be solved by the invention]
However, a gas introduction port is provided in the upstream part of the place where the exhaust pipe joint or the like is likely to adhere, and an adhesion prevention gas such as nitrogen gas is allowed to flow to prevent by-products from accumulating in the exhaust pipe system. In the CVD apparatus, the adhesion prevention effect is not exerted on the portion upstream of the gas inlet port of the exhaust pipe or the opening (exhaust port) in the manifold of the exhaust pipe system, so the remaining film forming gas and by-products And the like adhere to the exhaust port and accumulate.
[0005]
An object of the present invention is to provide a semiconductor manufacturing apparatus that can effectively prevent clogging of an exhaust pipe system.
[0006]
[Means for Solving the Problems]
A semiconductor manufacturing apparatus according to the present invention includes an exhaust pipe having one end connected to a processing chamber for processing a substrate and the other end connected to an exhaust device, and a cladding tube having an outlet is provided inside the exhaust pipe. It is inserted through a buffer, and an anti-adhesion gas is introduced into the buffer.
[0007]
According to the above-described means, when the adhesion preventing gas is introduced into the buffer during the exhaust through the exhaust pipe, the adhesion preventing gas flows out from the outlet of the cladding tube, thereby causing the adhesion included in the exhaust gas flowing down the exhaust pipe. Since the contact of the by-products and the like, which are easily generated, with the surface of the exhaust pipe is blocked, it is possible to prevent the by-products and the like which are easily deposited from adhering to and depositing on the inner peripheral surface of the exhaust pipe and the cladding.
[0008]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, an embodiment of the present invention will be described with reference to the drawings.
[0009]
As shown in FIG. 1, a CVD apparatus 10 according to the present embodiment includes a vertical process tube 11 that is vertically arranged and fixedly supported so that the center line is vertical. The process tube 11 includes an outer tube 12 and an inner tube 13 that are arranged concentrically with each other. The outer tube 12 is made of quartz glass or silicon carbide (SiC) and has a cylindrical shape with the upper end closed and the lower end opened. The inner tube 13 is formed integrally and is formed in a cylindrical shape using quartz glass or silicon carbide and having both upper and lower ends opened. A cylindrical hollow portion of the inner tube 13 forms a processing chamber 14 into which a plurality of wafers held concentrically aligned by a boat are loaded, and a lower portion of the inner tube 13 serves as a substrate to be processed. A furnace port 15 having a diameter larger than the maximum outer diameter of the wafer is formed.
[0010]
As shown in FIGS. 1 and 2, a manifold 16 is concentrically arranged at the lower end of the process tube 11, and the process tube 11 is supported vertically by being supported by the housing 2. It has become. The manifold 16 is made of a metal such as stainless steel and is formed in a short cylindrical shape with both upper and lower ends opened, and a partition wall 17 that vertically divides the inner space of the manifold 16 is formed in the middle portion of the inner periphery of the manifold 16. Projected horizontally. A gas introduction pipe 18 is connected to the lower end portion of the side wall of the manifold 16 so as to communicate with the lower space on the furnace port 15 side in the inner space of the manifold 16 partitioned by the partition wall 17. The other end is connected to a gas supply device (not shown) for supplying a gas such as a source gas or nitrogen gas. An exhaust port 20 connected to an exhaust pipe system 40, which will be described later, is provided at the upper part of the side wall of the manifold 16 so as to communicate with the upper space of the inner space of the manifold 16 partitioned by the partition wall 17 so as to be exhausted. The mouth 20 exhausts an exhaust passage 19 formed by a gap between the outer tube 12 and the inner tube 13.
[0011]
As shown in FIGS. 1 and 2, the CVD apparatus 10 includes a furnace port opening / closing device 21 as an isolation valve that opens and closes the furnace port 15 of the manifold 16. It arrange | positions concentrically with the extended line of a center line, and is comprised so that it may be raised / lowered by a boat elevator (not shown). The furnace port opening / closing device 21 has a base 22 that is vertically moved up and down by a boat elevator, and a seal cap 23 that is formed in a disk shape substantially equal to the outer diameter of the manifold 16 and seals the furnace port 15 in close contact with the lower end surface of the manifold 16. The seal cap 23 is arranged in parallel with a slight gap immediately above the base 22 and is supported horizontally. A rotating shaft 24 rotated by a rotation drive device (not shown) is vertically inserted on the center line of the base 22 and is rotatably supported by a bearing device. A boat 25 is mounted on the upper end of the rotating shaft 24. Stands vertically and is fixed.
[0012]
As shown in FIG. 1, the boat 25 includes a pair of upper and lower end plates 26 and 27 and a plurality of holding members 28 disposed vertically between the both end plates 26 and 27. A plurality of holding grooves 29 are arranged in the holding member 28 at equal intervals in the longitudinal direction so as to be opened in the same plane. The wafer 1 is held in the boat 25 by being aligned in a state where the centers are aligned with each other horizontally by inserting the outer peripheral portion between the plurality of holding grooves 29.
[0013]
As shown in FIG. 1, a heater unit 30 for heating the inside of the process tube 11 is concentrically provided outside the process tube 11 so as to surround the outer tube 12. 30 is configured to heat the inside of the process tube 11 uniformly or to a predetermined temperature distribution. The heater unit 30 is configured such that a resistance heater 31 is spirally laid on the inner periphery of a heat insulating tank 32 formed in a cylindrical shape, and is vertically installed on the housing 2.
[0014]
As shown in detail in FIG. 2, the exhaust pipe system 40 according to the present embodiment connected to the exhaust port 20 includes a first exhaust pipe 41 connected to the exhaust port 20. The pipe 41 is formed in a large-diameter cylindrical shape corresponding to the large-diameter exhaust port 20. An end on the exhaust port 20 side (hereinafter referred to as an upstream end) on the inner peripheral surface of the first exhaust pipe 41 and a downstream end that is the end opposite to the exhaust port 20 include an upstream side. The positioning part 42 and the downstream positioning part 43 are projected inward in the radial direction. An adhesion preventing gas introduction pipe 45 for introducing an adhesion preventing gas 44 such as nitrogen (N ₂ ) gas into the inner space of the first exhaust pipe 41 is connected to an intermediate portion of the first exhaust pipe 41 to prevent adhesion. An adhesion preventing gas supply device (not shown) is connected to the gas introduction pipe 45 via a gas heating device 70.
[0015]
Inside the first exhaust pipe 41, a cladding tube 47 formed in a telescope (distance glasses) structure having a slightly smaller diameter than the inner diameter of the first exhaust pipe 41 is inserted through a buffer 46. That is, the cladding tube 47 is short and includes a centering 48 formed in a circular ring shape corresponding to the inner diameter of the downstream positioning portion 43 of the first exhaust pipe 41, and the centering 48 is downstream of the first exhaust pipe 41. It is inserted in the side positioning part 43 and positioned concentrically. A flange portion 49 projects from the outer periphery of the centering 48, and a seal ring 50 is fitted to the outer periphery of the flange portion 49. The centering 48 is fixed by being fastened by a pipe joint portion 56 with a flange portion 49 and a seal ring 50 sandwiched between a first exhaust pipe 41 and a second exhaust pipe 54 described later. Yes. The cladding tube 47 is short and includes a plurality of segment rings 51 formed in a cylindrical shape whose diameter is smaller by the buffer 46 than the inner diameter of the first exhaust pipe 41. By aligning the center lines in series and adjoining each other, they are fitted at the abutting end portion to form a single pipe structure. A narrow gap is formed in the fitting portion between the adjacent segment rings 51, 51, and the outlet 52 for allowing the adhesion preventing gas 44 of the buffer 46 to flow into the inner space of the cladding tube 47 is formed by this gap. The segment ring 51 has different diameters at one end and the other end. The diameter is increased on the upstream side of the exhaust gas flow and the diameter is decreased on the downstream side so that the adjacent segment rings 51 partially overlap. By doing so, the anti-adhesion gas in the buffer 46 can easily enter the cladding tube 47, and can easily flow along the inner surface of the cladding tube 47 after entering. Furthermore, it is possible to suppress exhaust gas flowing in the cladding tube 47 from entering the buffer 46 and to prevent the exhaust gas from adhering to the inside of the cladding tube 47. The upstream end of the segment ring 51 disposed at the uppermost stream side end of the cladding tube 47 is fitted to the upstream positioning portion 42 of the first exhaust pipe 41 with a small clearance, and this clearance prevents the buffer 46 from sticking. An outflow port 53 through which the gas 44 flows out to the exhaust port 20 is configured. Then, the downstream end of the segment ring 51 arranged at the most downstream end of the cladding tube 47 is fitted into the inner periphery of the centering 48, so that the cladding tube 47 is placed inside the first exhaust pipe 41 with a predetermined buffer. 46 is fixed to a concentric circle.
[0016]
As shown in FIG. 1, the exhaust pipe system 40 includes a second exhaust pipe 54, and a reducer portion 55 increases in the middle of the second exhaust pipe 54 as the diameter increases from the upstream side to the downstream side. It is formed to do. The second exhaust pipe 54 is fastened to the downstream end of the first exhaust pipe 41 by a pipe joint portion 56. A third exhaust pipe 57 is connected to the downstream end of the second exhaust pipe 54 by a pipe joint portion 58, and an adhesion preventing gas 44 is placed in the inner space of the third exhaust pipe 57 in the middle of the third exhaust pipe 57. An adhesion prevention gas introduction pipe 59 to be introduced is connected, and an adhesion prevention gas supply device (not shown) is connected to the adhesion prevention gas introduction pipe 59 via a gas heating device 70. A fourth exhaust pipe 60 is connected to the downstream end of the third exhaust pipe 57 by a pipe joint portion 61, and a by-product removal unit 62 is connected to one end of the fourth exhaust pipe 60 by a pipe joint portion 63. ing. A fifth exhaust pipe 64 is connected to the downstream end of the byproduct removal unit 62 by a pipe joint portion 65. Although illustration is omitted, the downstream end of the fifth exhaust pipe 64 is connected to an exhaust device constituted by a vacuum pump or the like.
[0017]
Next, a case where silicon nitride (Si ₃ N ₄ ) is formed on a wafer using the CVD apparatus according to the above configuration will be described.
[0018]
In the boat loading / unloading chamber directly below the process tube 11, the plurality of wafers 1 are loaded into the boat 25 by the wafer transfer device in a state in which the center lines are aligned with each other. As shown in FIG. 1, the boat 25 loaded with a plurality of wafers 1 is placed on the seal cap 23 in a state where the direction in which the group of wafers 1 is arranged is vertical, and is lifted by the boat elevator. Then, it is carried into the processing chamber 14 from the furnace port 15 (boat loading) and is left in the processing chamber 14 while being supported by the seal cap 23. In this state, the seal cap 23 is in a state of hermetically sealing the furnace port 15.
[0019]
Subsequently, the inside of the process tube 11 is exhausted by an exhaust pipe system 40 connected to the exhaust port 20 at a predetermined degree of vacuum (several tens to tens of thousands Pa). At this time, since the exhaust port 20 is set to have a large diameter, the exhaust speed of the exhaust port 20 with respect to the exhaust path 19 can be set larger than in the conventional example. It is possible to prevent the deposition of the remaining film forming gas and particles such as by-products on the surface 16. Further, the inside of the process tube 11 is uniformly heated to a predetermined temperature (about 600 ° C.) by the heater unit 30.
[0020]
When the temperature and pressure inside the process tube 11 are stabilized, the film forming gas 71 is introduced into the processing chamber 14 of the inner tube 13 by the gas introduction pipe 18. In the present embodiment, SiH ₂ Cl ₂ gas and ammonia (NH ₃ ) gas are used as the film forming gas. Incidentally, NH ₃ gas is introduced before SiH ₂ Cl ₂ gas is introduced. During the processing, the boat 25 is rotated by the rotating shaft 24.
[0021]
The introduced film forming gas 71 rises in the processing chamber 14 of the inner tube 13, flows out from the upper end opening to the exhaust passage 19 formed by the gap between the inner tube 13 and the outer tube 12, and is exhausted from the exhaust port 20. . The film forming gas 71 contacts the surface of the wafer 1 when passing through the processing chamber 14. A Si ₃ N ₄ film is deposited (deposited) on the surface of the wafer 1 by the thermal CVD reaction by the film forming gas 71 accompanying the contact with the wafer 1.
[0022]
When a preset processing time for depositing a desired thickness of the Si ₃ N ₄ film elapses, the seal cap 23 is lowered, the furnace port 15 is opened, and the wafer group 1 is held in the boat 25. Is unloaded from the furnace port 15 to a boat loading / unloading chamber (not shown) directly below the process tube 11.
[0023]
By the way, when the atmosphere of the processing chamber 14 is exhausted by the exhaust pipe system 40, all the particles such as the remainder of the film forming gas 71 and the by-products and dust flow on the inner wall surface while flowing through the exhaust pipe system 40. Since it contacts an extremely fine uneven surface or a joint of a joint, a phenomenon occurs in which it adheres to or is adsorbed to these surfaces or gaps and accumulates as foreign matter. In particular, it is known that when a sublimation material such as antimony is used as a raw material gas, the generation becomes remarkable.
[0024]
Therefore, in the present embodiment, when the inside of the process tube 11 is exhausted by the exhaust pipe system 40, the adhesion prevention gas 44 is caused to flow through the adhesion prevention gas introduction pipes 45 and 59, thereby causing the exhaust pipe system 40 to be clogged. Is prevented. That is, the anti-adhesion gas 44 supplied from the anti-adhesion gas introduction pipe 45 of the first exhaust pipe 41 diffuses into the buffer 46 between the first exhaust pipe 41 and the cladding pipe 47, and the buffer 46 has the exhaust pipe system 40. Since the exhaust force is acting, the air is sucked into the inner space of the cladding tube 47 from the plurality of outlets 52 of the cladding tube 47. Since the adhesion preventing gas 44 sucked into the inner space of the cladding tube 47 flows along the inner peripheral surface of the cladding tube 47, the inner peripheral surface of the cladding tube 47 is coated, so that the exhaust gas is covered with the cladding tube 47. No contact is made with the inner peripheral surface of 47. Therefore, it is possible to prevent the deposition gas residue, by-products, and particles such as dust from adhering to and depositing on the surface of the cladding tube 47, that is, the first exhaust pipe 41. Further, since the exhaust force of the exhaust pipe system 40 is also acting on the outlet 53 at the upstream end of the cladding tube 47, a part of the adhesion preventing gas 44 supplied to the buffer 46 is at the upstream end of the cladding tube 47. From the outlet 53 to the exhaust port 20. Since the adhesion preventing gas 44 sucked out to the exhaust port 20 is in a state of covering the exhaust port 20, the exhaust gas does not contact the inner peripheral surface of the exhaust port 20. Therefore, it is possible to prevent the deposition gas residue, by-products, and particles such as dust from adhering and accumulating on the surface of the exhaust port 20.
[0025]
The anti-adhesion gas 44 supplied from the anti-adhesion gas introduction pipe 59 connected to the third exhaust pipe 57 flows along the inner peripheral surface of the third exhaust pipe 57, thereby causing the inner peripheral surface of the third exhaust pipe 57 to flow. Since it is in a covered state, the exhaust gas does not contact the inner peripheral surface of the third exhaust pipe 57. Therefore, it is possible to prevent the deposition gas residue, by-products, and particles such as dust from adhering to and depositing on the surface of the third exhaust pipe 57. Then, the remainder of the film forming gas in the exhaust gas, particles such as by-products and dust are removed by the by-product removing unit 62.
[0026]
In the present embodiment, the adhesion preventing gas 44 is heated to a predetermined temperature by the gas heating device 70. For example, when TEOS is formed, the temperature of the adhesion preventing gas 44 is set to 200 ° C. Since the heated anti-adhesion gas 44 flows to the buffer 46, the exhaust port 20 and the third exhaust pipe 57, it is possible to prevent the temperature of the exhaust gas from being lowered. As a result, it is possible to more reliably prevent the deposition gas residue, by-products, and particles such as dust from adhering and accumulating.
[0027]
According to the embodiment, the following effects can be obtained.
[0028]
1) By covering the inner peripheral surface of the cladding tube and the exhaust port with an anti-adhesion gas by inserting a cladding tube having an outflow port inside the first exhaust pipe connected to the exhaust port in the exhaust pipe system. Since the exhaust gas can be prevented from coming into contact with the inner peripheral surface of the cladding tube and the surface of the exhaust port, the remaining film forming gas in the exhaust gas and particles such as by-products and dust are deposited and deposited. Can be prevented.
[0029]
2) By preventing the deposition gas residue, by-products and dust particles from adhering and accumulating in the vicinity of the exhaust port of the exhaust pipe system, the deposits are peeled off and separated from foreign particles (particles). Thus, it is possible to prevent the phenomenon of backflow into the processing chamber due to pressure fluctuations in the processing chamber during film formation, and thus it is possible to prevent the yield of the CVD apparatus and thus the IC manufacturing method from being lowered.
[0030]
3) Reducing the rigorous maintenance of CVD equipment by preventing the deposition gas residue, by-products and particles such as dust from adhering and accumulating near the exhaust port of the exhaust pipe system Therefore, the operation downtime of the CVD apparatus can be shortened, and the throughput of the CVD apparatus and, consequently, the IC manufacturing method can be improved.
[0031]
4) By heating the anti-adhesion gas to a predetermined temperature with a gas heating device, it is possible to prevent the temperature of the exhaust gas from being lowered, so that it is possible to prevent by-products from being generated by the exhaust gas. As a result, it is possible to more reliably prevent the remainder of the film forming gas and particles such as by-products and dust from adhering to and depositing on the buffer, the exhaust port, and the third exhaust pipe.
[0032]
Needless to say, the present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the scope of the invention.
[0033]
For example, as an adhesion preventing gas, not only nitrogen gas but also other inert gas, clean room clean air, or the like may be used.
[0034]
The cladding tube is not limited to being installed in the first exhaust pipe connected to the exhaust port, but may be installed in another stage exhaust pipe such as a second exhaust pipe having a reducer portion.
[0035]
The cladding tube is not limited to a telescope structure, but may be a porous tube structure or the like. Further, the outlet of the cladding tube is not limited to being formed by the gap or clearance of the connecting portion of the segment ring, but may be formed by a small hole, a slit or the like provided in the tube wall of the cladding tube.
[0036]
The present invention is not limited to a CVD apparatus, and can be applied to semiconductor manufacturing apparatuses such as an oxide film forming apparatus, a diffusion apparatus, an annealing apparatus, and other heat treatment apparatuses.
[0037]
【The invention's effect】
As described above, according to the present invention, clogging of the exhaust pipe system can be effectively prevented.
[Brief description of the drawings]
FIG. 1 is a partially omitted side sectional view showing a CVD apparatus according to an embodiment of the present invention.
2A is a longitudinal sectional view of a main part, FIG. 2B is an enlarged sectional view of a part b of FIG. 2A, and FIG. 2C is an enlarged sectional view of a part c of FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Wafer, 2 ... Housing | casing, 10 ... CVD apparatus (semiconductor manufacturing apparatus), 11 ... Process tube, 12 ... Outer tube, 13 ... Inner tube, 14 ... Processing chamber, 15 ... Furnace port, 16 ... Manifold, 17 ... Partition wall 18 ... Gas introduction pipe, 19 ... Exhaust passage, 20 ... Exhaust port, 21 ... Furnace port opening / closing device, 22 ... Base, 23 ... Seal cap, 24 ... Rotary shaft, 25 ... Boat, 26, 27 ... End plate, DESCRIPTION OF SYMBOLS 28 ... Holding member, 29 ... Holding groove, 30 ... Heater unit, 31 ... Resistance heater, 32 ... Heat insulation tank, 40 ... Exhaust pipe system, 41 ... First exhaust pipe, 42 ... Upstream side positioning part, 43 ... Downstream side positioning , 44 ... Anti-adhesion gas, 45 ... Anti-adhesion gas introduction pipe, 46 ... Buffer, 47 ... Cladding pipe, 48 ... Centering, 49 ... Flange part, 50 ... Seal ring, 51 ... Segment ring, 52, 53 Outlet 54, second exhaust pipe, 55 ... reducer section, 56 ... pipe joint section, 57 ... third exhaust pipe, 58 ... pipe joint section, 59 ... anti-adhesion gas introduction pipe, 60 ... fourth exhaust pipe, 61 DESCRIPTION OF SYMBOLS ... Pipe joint part, 62 ... By-product removal unit, 63 ... Pipe joint part, 64 ... Fifth exhaust pipe, 65 ... Pipe joint part, 70 ... Gas heating apparatus, 71 ... Film-forming gas.

Claims (5)

One end is connected to a processing chamber for processing a substrate and the other end is connected to an exhaust device, and an exhaust pipe system for exhausting exhaust gas exhausted from the processing chamber is provided.
An upstream positioning portion and a downstream positioning portion project radially inward from the upstream end portion and the downstream end portion of the inner peripheral surface of one exhaust pipe constituting the exhaust pipe system. And
A cladding tube is inserted through the buffer inside the exhaust tube,
The buffer is configured to introduce an anti-adhesion gas,
The cladding tube includes a plurality of segment rings formed in a cylindrical shape having a large upstream diameter and a small downstream diameter, and the plurality of segment rings are arranged in series with the center line aligned, The upstream side of the segment ring and the downstream side of the adjacent segment ring are partially overlapped so as to form a gap, and the adhesion gas of the buffer flows out into the inner space of the cladding tube by the gap. The first outlet is configured,
The upstream end portion of the segment ring disposed at the uppermost stream side end of the cladding tube is fitted with the upstream positioning portion with a clearance, and the clearance forms the second outlet. A semiconductor manufacturing apparatus. It has a centering formed in a circular ring shape corresponding to the inner diameter of the downstream positioning portion, and is fitted into the downstream positioning portion and positioned concentrically.
By inserting the downstream end of the segment ring disposed at the most downstream end of the cladding tube into the inner periphery of the centering, the cladding tube is concentrically placed with the buffer inside the exhaust tube. The semiconductor manufacturing apparatus according to claim 1, wherein the semiconductor manufacturing apparatus is fixed . A cladding tube used in a semiconductor manufacturing apparatus having one end connected to a processing chamber for processing a substrate and the other end connected to an exhaust device, and having an exhaust pipe system for exhausting exhaust gas exhausted from the processing chamber. ,
  One exhaust pipe constituting the exhaust pipe system, wherein an upstream positioning portion and a downstream positioning portion are radially inward at an upstream end and a downstream end on an inner peripheral surface of the exhaust pipe. A cylindrical shape with a large upstream diameter and a small downstream diameter so as to be inserted through a buffer configured to introduce an adhesion preventing gas into the exhaust pipe projecting from And a plurality of segment rings arranged in series with the center line aligned, and a part of the upstream side of the segment ring and the downstream side of the adjacent segment ring The first outlet is configured to overlap to form a gap, and the gap prevents the buffer adhesion gas from flowing into the inner space of the cladding tube.
  An upstream end portion of the segment ring disposed at the most upstream end is fitted with the upstream positioning portion with a clearance, and the clearance is formed by the clearance. A cladding tube characterized by that. The centering formed in a circular ring shape corresponding to the inner diameter of the downstream positioning portion is fitted into the downstream positioning portion and positioned concentrically.
  The downstream end portion of the segment ring arranged at the most downstream end is fitted into the inner periphery of the centering, and is thus fixed concentrically by placing the buffer inside the exhaust pipe. The cladding tube according to claim 3. A method of manufacturing a semiconductor integrated circuit device processed using the semiconductor manufacturing device according to claim 1,
  Carrying the substrate into the processing chamber;
  Heating the processing chamber;
  Introducing a film forming gas into the processing chamber;
  A part of the adhesion preventing gas supplied to the buffer is sucked out from the first outlet;
  A step of sucking out a part of the adhesion preventing gas supplied to the buffer from the second outlet;
  A method for manufacturing a semiconductor integrated circuit device, comprising:

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