JP4910105B2 - Vapor thin film growth apparatus and vapor thin film growth method - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a vapor phase thin film growth apparatus for forming a thin film on an object to be processed by MOCVD or the like, and a vapor phase thin film growth method using the apparatus.
[0002]
[Prior art]
In the prior art of vapor phase thin film growth in which a thin film is grown on the surface of the object to be processed by supplying a raw material gas to the surface of the object to be heated and reacting, for example, the object to be processed is placed on a rotating susceptor. There is a method of mounting and supplying the source gas from the center of rotation of the susceptor toward the outer periphery.
[0003]
An example of the prior art of vapor phase thin film growth by this method will be described with reference to the schematic diagram of the vertical section of the vapor phase thin film growth apparatus according to the prior art shown in FIG.
In the vapor phase thin film growth apparatus, a susceptor 2 is attached to a susceptor rotation shaft 10 that rotates about a susceptor rotation center 11 in a reaction chamber 1 having an airtight structure. An appropriate number of objects to be processed 4 are installed on the susceptor 2, and each object to be processed 4 is rotated on the susceptor 2 by a rotation mechanism (not shown) around the center 12 of the object to be processed.
Further, a heater 3 is installed on the side of the susceptor 2 where the object 4 is not installed, and heats the object 4 and the susceptor 2 to a desired temperature.
[0004]
A raw material gas, which is a thin film raw material formed on the object to be processed 4, passes through the raw material gas channel 15 and enters the reaction chamber 1 through the raw material gas supply port 14, and is substantially perpendicular to the vicinity of the center of the susceptor. The raw material gas that is perpendicular to the vicinity of the center of the susceptor travels between the susceptor 2 and the wall of the reaction chamber 1 and is exhausted out of the reaction chamber 1 through the gas exhaust port 13.
[0005]
At this time, the raw material gas is gradually pyrolyzed from the gas having a low thermal decomposition temperature on the surface of the susceptor 2 and the object to be processed 4 heated by the heater 3, and on the susceptor 2 and the object to be processed 4 in the form of a compound or the like. Accumulate. Therefore, the concentration of the raw material gas is highest near the supply port 14 and decreases as it goes downstream.
As the concentration of the source gas decreases, the thickness of the thin film formed by deposition on the object to be processed 4 is thicker on the side closer to the source gas supply port and becomes thinner toward the downstream side.
In order to prevent this non-uniform film thickness on the object 4 to be processed, the object 4 rotates around the center 12 of the object as described above.
[0006]
However, when it is intended to increase the production amount per batch of the film forming operation described above, it is necessary to increase the number of objects to be processed 4 installed on the susceptor 2, but the source gas supply port 15 and the objects to be processed If the positional relationship with the target object 4 differs greatly for each target object, the thickness of the thin film formed between the target objects becomes non-uniform, so that the number of target objects 4 on the susceptor 2 is increased. There are limitations.
[0007]
Furthermore, in order to increase the film forming rate for a certain amount of source gas supply, it is preferable that the object to be processed 4 be closer to the source gas supply port 15. However, the source gas used for film formation also has a high decomposition temperature and a low decomposition temperature.
Here, the source gas having a low decomposition temperature is subject to thermal decomposition in the middle when the distance from the source gas supply port 15 is increased, and is deposited on the susceptor 2 before reaching the object 4 to be processed. The gas concentration on the processing body 4 is reduced, and the amount of deposition is also greatly reduced.
[0008]
On the other hand, when the temperature of the gas path is low or the distance between the source gas supply port 15 and the object to be processed 4 is too short, the source gas having a high decomposition temperature is not sufficiently thermally decomposed. In addition to the film thickness and composition, for example, the carrier concentration uniformity due to impurities to be incorporated into the film is impaired by the reaction of the raw material gas.
Therefore, in the conventional technique, the object to be treated 4 is installed on the susceptor 2 where the thermal decomposition state of the raw material gas having a high thermal decomposition temperature and the low raw material gas has an appropriate ratio. A desired thin film was formed on the body 4.
[0009]
However, in this case, when the difference in the thermal decomposition temperature between the raw material gas having a high thermal decomposition temperature and the raw material gas having a low thermal decomposition temperature is 100 ° C. or more, for example, Since the range of “where the state is in an appropriate ratio” is narrow, the number of objects to be processed 4 that can be installed on the susceptor 2 is limited, and it is difficult to increase the production amount per batch of the film forming operation. there were. In addition, the carrier concentration in the film formed on each object to be processed 4 may also vary.
[0010]
Therefore, as described above, in the actual film forming operation, in order to increase the uniformity of the film thickness and the carrier concentration of the thin film formed on the object to be processed 4, the object to be processed 4 together with the susceptor 2 has a rotation center 11 of the susceptor. It is rotated around the center.
However, even if the susceptor 2 is rotated as described above, uniform film formation can be performed on the object 4 to be processed on the susceptor 2, and the film formation speed is not decreased without increasing the supply amount of the source gas. The range in which film formation can be performed is a limited and narrow range.
[0011]
[Problems to be solved by the invention]
The present invention has been made under the above-mentioned background, and even if the difference in thermal decomposition temperature between a raw material gas having a high thermal decomposition temperature and a raw material gas having a low thermal decomposition temperature is, for example, 100 ° C. or higher, Vapor-phase thin film growth apparatus and vapor-phase thin film that can increase the production amount per batch of the film-forming operation without impairing the uniformity of the film thickness, composition ratio, and carrier concentration of the thin film formed thereon To provide a growth method.
[0012]
[Means for Solving the Problems]
As a result of intensive studies by the present inventors in order to solve the above-described problems, in order to increase the production amount per batch of the film forming operation, it depends on the thermal decomposition temperature of each raw material gas used for film forming. Thus, it has been conceived that the temperature of the source gas flow path is controlled to supply the gas on the susceptor or the object to be processed after setting the gas temperature appropriately according to the thermal decomposition temperature of each source gas.
Further, when supplying a plurality of source gases having different pyrolysis temperatures, at least two source gas channels are provided, and source gases are supplied to appropriate source gas channels according to the pyrolysis temperature of each source gas. I also thought of what I should do.
[0013]
That is, the first invention in the present invention is:
A heater,
A susceptor that rotates while being heated by the heater;
There are at least two source gas flow paths that are installed on the susceptor and supply source gas to a plurality of objects to be processed that have the same rotational center as the susceptor, and a desired gas channel is provided on the object to be processed. A vapor phase thin film growth apparatus for forming a thin film,
The source gas channel is formed by a substantially conical source gas supply nozzle having the same center axis as the rotation center of the susceptor with the bottom surface facing the susceptor , and is different for source gases having different pyrolysis temperatures. A source gas channel,
At least one of the source gas flow paths is formed on the susceptor or the target object at a position closer to the target object than the bisector of the distance connecting the susceptor, the rotation center, and the center of the target object. A vapor phase thin film growth apparatus having a gas supply port for supplying a gas.
[0014]
The second invention is
At least one of the source gas flow paths has a cooling mechanism for cooling the source gas in the source gas supply nozzle . The vapor phase thin film growth apparatus according to the first aspect of the invention is characterized in that
[0015]
The third invention is
After at least one other source gas channel of the source gas channel flows through the source gas supply nozzle at an angle that is perpendicular or nearly perpendicular to the surface of the susceptor on which the target object is placed, The vapor-phase thin film growth apparatus according to the first aspect, wherein the apparatus flows between a surface of the susceptor on which the object to be processed is placed and a bottom surface of the source gas supply nozzle .
[0016]
The fourth invention is:
A source gas is supplied to a target object that is disposed on a susceptor that rotates while being heated and is arranged in the same manner as the center of rotation of the susceptor by using at least two source gas flow paths, A vapor phase thin film growth method for forming a desired thin film on a body,
At least a source gas channel formed for source gases having different pyrolysis temperatures formed in a substantially conical source gas supply nozzle having a bottom surface facing the susceptor and having the same center axis as the rotation center of the susceptor. Using one, a raw material gas is supplied onto the susceptor or the object to be processed at a position closer to the object to be processed than the bisector of the distance connecting the susceptor, the rotation center, and the center of the object to be processed, It is a vapor phase thin film growth method characterized by forming a desired thin film on the object to be processed.
The fifth invention is:
The vapor phase thin film growth method according to the fourth aspect of the invention, wherein the source gas passing therethrough is cooled by a cooling mechanism provided in at least one of the source gas flow paths.
The sixth invention is:
After supplying the source gas at an angle that is perpendicular or nearly perpendicular to the surface of the susceptor on which the object is mounted, using at least one other source gas channel,
The vapor phase thin film growth method according to the fourth aspect, wherein the source gas is allowed to flow between a surface of the susceptor on which the object to be processed is placed and a bottom surface of the source gas supply nozzle. .
[0017]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a schematic view of a longitudinal section of an example of a vapor phase thin film growth apparatus according to the present invention, and in FIG. 2 described above, the corresponding portions are denoted by the same reference numerals.
[0018]
The example of the vapor phase thin film growth apparatus according to the present invention shown in FIG. 1 has a reaction chamber 1 having an airtight structure and a source gas supply nozzle 16 that opens into the reaction chamber 1 and supplies a source gas.
A susceptor 2, a heater 3, an object to be processed 4, a susceptor rotating shaft 10, and a gas exhaust port 13 are installed in the reaction chamber 1. In the raw material gas supply nozzle 16, a cooling mechanism 7 for cooling the raw material gas having a low thermal decomposition temperature, a raw material gas passage 8 having a high thermal decomposition temperature, and a raw material gas passage 9 having a low thermal decomposition temperature are installed. The bottom surface 17 of the nozzle is provided with a gas supply port 5 for a source gas having a high pyrolysis temperature and a gas supply port 6 for a source gas having a low pyrolysis temperature.
[0019]
The susceptor 2 in the reaction chamber 1 is attached to the susceptor rotation shaft 10 and rotates around the susceptor rotation center 11. Further, an appropriate number of objects to be processed 4 are installed on the susceptor 2, and each object to be processed 4 is rotated on the susceptor 2 by a rotation mechanism (not shown) around the center 12 of the object to be processed. .
Further, a heater 3 is installed on the side of the susceptor 2 where the object 4 is not installed, and heats the object 4 and the susceptor 2 to a desired temperature.
[0020]
On the other hand, the source gas supply nozzle 16 has a substantially conical shape, and is connected to the reaction chamber 1 such that the bottom surface 17 of the nozzle faces the susceptor 2 and the center of the bottom surface coincides with the susceptor rotation center 11. . The conical center axis passes through a source gas flow path 8 for one or more source gases having a high thermal decomposition temperature, and a gas supply port 5 for a source gas having a high thermal decomposition temperature is provided at the center of the bottom surface 17 of the nozzle. Is provided.
Near the surface of the conical slope, a raw material gas flow path 9 of one or more kinds of raw material gases having a low thermal decomposition temperature passes, and a gas supply port 6 of a raw material gas having a low thermal decomposition temperature is provided around the bottom surface 17 of the nozzle. Is installed.
The source gas having a high pyrolysis temperature and the source gas having a low pyrolysis temperature are not mixed with each other, but pass through the source gas channel 8 having a high pyrolysis temperature and the source gas channel 9 having a low pyrolysis temperature, respectively. The gas is supplied from the gas supply port into the reaction chamber 1.
[0021]
As a result, the raw material gas flow path 9 having a low thermal decomposition temperature is installed in a portion of the raw material gas supply nozzle 16 where the heat from the heater 3 is hardly received. A cooling mechanism 7 is installed in the path 9. As this cooling mechanism 7, for example, a cooling jacket for circulating water, oil, or the like, a Peltier element, or the like can be applied.
[0022]
As a result, although the gas temperature of the gas passing through the raw material gas flow path 9 having a low thermal decomposition temperature is lowered by the cooling mechanism 7, a stable temperature at which the raw material gas having a low thermal decomposition temperature is not thermally decomposed in the vicinity of the gas supply port 6. The gas temperature is preferably For example, when the raw material gas having a low thermal decomposition temperature is trimethylgallium gas, it is preferable to set the stable temperature at about 350 ° C. in the vicinity of the cooling mechanism 7 part.
In this way, the raw gas having a low pyrolysis temperature with the gas temperature lowered is supplied into the reaction chamber 1 from the gas supply port 6 of the raw gas having a low pyrolysis temperature and comes into contact with the susceptor 2. It is not the susceptor rotation center 11 but an appropriate point between the susceptor rotation center 11 and the workpiece 4. Preferably, a position closer to the object to be processed 4 than a bisector of a distance connecting the rotation center 11 of the susceptor and the center 12 of the object to be processed 4 can be considered.
[0023]
On the other hand, the raw material gas flow path 8 having a high thermal decomposition temperature passes through the central axis of the substantially conical raw material gas supply nozzle 16 as described above, and has a thermal decomposition temperature provided at the center of the bottom surface 17 of the nozzle. The raw material gas is supplied into the reaction chamber 1 through the gas supply port 5, contacts the susceptor 2 in the vicinity of the susceptor rotation center 11, and moves while being heated on the surface of the susceptor 2. At this time, if the gap between the bottom surface 17 of the nozzle and the susceptor 2 is made narrower than the distance between the wall of the reaction chamber 1 and the susceptor 2, the source gas having a high thermal decomposition temperature is separated from the bottom surface 17 of the nozzle and the susceptor 2. It is preferable that heat is efficiently received from the heated susceptor 2 while passing through a narrowly spaced flow path, and is heated to a temperature suitable for thermal decomposition before reaching the workpiece 4.
[0024]
That is, as shown in FIG. 1, in the source gas supply nozzle 16, the source gas flow path 8 having a high thermal decomposition temperature and the gas supply port 5 of the source gas having a high thermal decomposition temperature at the end are covered by the susceptor 2. It is installed so as to supply gas at a vertical or near-perpendicular angle with respect to the surface on which the treatment body 4 is placed. On the other hand, a raw material gas flow path 9 having a low thermal decomposition temperature and a raw material gas having a low thermal decomposition temperature as a terminal end The gas supply port 6 is installed so as to supply gas at an angle of preferably 45 ° or less, more preferably 30 ° or less with respect to the surface of the susceptor 2 on which the object 4 is placed.
[0025]
By adopting this configuration, the raw material gas having a high thermal decomposition temperature that is sufficiently heated while passing through the narrow space between the bottom surface 17 of the nozzle and the susceptor 2 described above, and the thermal decomposition temperature cooled by the cooling mechanism 7 are obtained. The low source gas is heated by the susceptor 2 while being mixed in the vicinity of the gas supply port 6 of the source gas having a low pyrolysis temperature.
Then, the heating capacity of the heater 3 and the cooling capacity of the cooling mechanism 7 may be appropriately adjusted so that the mixed gas exceeds the respective thermal decomposition temperatures immediately before reaching the object 4 to be processed. .
[0026]
At this time, the gas supply angle of the gas supply port 6 of the raw material gas having a low thermal decomposition temperature is preferably 45 ° or less, more preferably with respect to the surface of the susceptor 2 on which the object 4 is placed. Since gas is supplied at an angle of 30 ° or less, the source gas having a low pyrolysis temperature and the source gas having a high pyrolysis temperature are efficiently mixed on the surface of the susceptor 2 on which the object 4 is placed. The
With this configuration, it is possible to control and expand the range in which a desired vapor-phase thin film can be grown with a raw material gas having a low thermal decomposition temperature.
[0027]
As a result, on the susceptor 2, there are both a range in which a desired vapor phase thin film can be grown with a raw material gas having a high thermal decomposition temperature and a range in which a desired vapor phase thin film can be grown with a raw material gas having a low thermal decomposition temperature. It became possible to expand the possible area.
As a result, on the susceptor 2, the region where the object to be processed 4 can be installed is expanded, and at the same time, variations in the film composition formed on the object to be processed 4 can be reduced.
In addition, the number of objects to be processed 4 that can be installed on the susceptor 2 can be increased, and the production yield of each object to be processed 4 can be increased.
[0028]
In addition, by providing a plurality of source gas channels, the source gas flowing through each channel is controlled in a pulse shape, for example, to further expand the region where the target object 4 can be installed, It is also possible to adopt a configuration that further reduces variations in the composition of the film formed on 4.
[0029]
As described above, the embodiment of the invention has been described by taking, as an example, the source gas supply nozzle 16 having the source gas channel 8 having a high pyrolysis temperature and the source gas channel 9 having a low pyrolysis temperature. Here, since there are three or more kinds of source gases and the pyrolysis temperatures of the respective source gases are different, the above-described two source gas flow paths expand the region where the object 4 to be processed can be installed on the susceptor 2. Is difficult, by providing a suitable number of source gas channels having a moderate thermal decomposition temperature between the two source gas channels, a region where the object 4 can be installed is provided. Expansion is also a preferred configuration.
[0030]
In the case of adopting this configuration, it is also a preferable configuration to provide a cooling mechanism for the raw material gas flow path having a moderate pyrolysis temperature as required.
Further, the gas supply port of the raw material gas flow path having a medium pyrolysis temperature is composed of the gas supply port 5 of the raw material gas having a high thermal decomposition temperature and the gas supply port 6 of a raw material gas having a low thermal decomposition temperature. It is also preferable to provide the susceptor 2 with an appropriate angle with respect to the surface of the susceptor 2 on which the object 4 is placed.
[0031]
In addition, as a result of housing the gas flow path, the gas supply port, and the like described above in the source gas supply nozzle 16, the reaction chamber 1 and the source gas supply nozzle 16 can be configured to be detachable. By adopting this configuration, it is easy to design and maintain the apparatus, and at the same time, when the source gas is changed, it is easy to replace it with a source gas supply nozzle 16 suitable for the source gas.
Example 1
A GaAs wafer was used as an object to be processed, arsine gas as a raw material gas having a high thermal decomposition temperature, trimethylgallium gas as a raw material gas having a low thermal decomposition temperature, and hydrogen gas as a carrier gas.
The gas supply amounts are arsine gas 200 SCCM and hydrogen gas 20 SLM, a mixed gas of 10 to 50 SCCM of trimethylgallium gas and hydrogen gas, and hydrogen gas 20 SLM.
[0033]
And the supply port of the mixed gas of arsine gas and hydrogen gas was installed so that gas might be supplied to a susceptor rotation center part.
On the other hand, trimethylgallium gas and hydrogen gas were changed to 50 to 200 ° C. by a cooling jacket in the middle, and a supply port was provided so as to be supplied in all directions toward the wafer on the susceptor. The position of the supply port was set so as to supply gas to a circumference of 130 mm from the rotation center of the susceptor.
[0034]
On the other hand, the GaAs wafer was placed on the susceptor so that the center of the wafer and the susceptor rotation center were 200 mm. As a result, ten 3 inch wafers can be placed on the susceptor.
The heating conditions for the susceptor were set to 700 ° C. on the GaAs wafer.
[0035]
Under the above conditions, a GaAs thin film was formed on a GaAs wafer.
In this film formation, carbon derived from the methyl group (CH ₃ ) generated by the decomposition reaction of trimethylgallium and arsine is taken into the thin film and becomes a carrier.
As a result of this film forming operation, in the 10 GaAs wafers obtained, the carrier concentration variation in the formed film is within ± 3% within the wafer surface, and ± 1 between each wafer in the batch. %.
As a result, it was possible to increase the production amount per batch of the film forming operation by about 1.7 times.
[0036]
(Example 2)
Using a GaAs wafer as the object to be processed, using arsine gas and phosphine gas as source gases with high pyrolysis temperature, trimethylgallium gas, trimethylindium gas and trimethylaluminum gas as source gases with low pyrolysis temperature, and hydrogen gas as carrier gas, InGaP thin film and InGaAlP thin film were formed on the GaAs wafer, and InGaAs thin film was formed on the InP wafer.
It was.
[0037]
In forming the InGaP thin film, the phosphine gas 400 SCCM and hydrogen gas 20 SLM, the mixed gas 10 to 30 SCCM of trimethylgallium gas and hydrogen gas, the mixed gas 800 to 1000 SCCM of trimethylindium gas and hydrogen gas, hydrogen A gas of 20 SLM was supplied.
Further, in the formation of an InGaAlP thin film, a phosphine gas 400 SCCM and hydrogen gas 20 SLM, a mixed gas 10 to 20 SCCM of trimethylgallium gas and hydrogen gas, a mixed gas 900 to 1000 SCCM of trimethylindium gas and hydrogen gas, trimethylaluminum gas, A mixed gas of hydrogen gas of 50 to 100 SCCM and a hydrogen gas of 20 SLM was supplied.
Further, in the formation of an InGaAs thin film, a gas of arsine gas 300 SCCM and hydrogen gas 20 SLM, a mixed gas 10 to 30 SCCM of trimethyl gallium gas and hydrogen gas, a mixed gas of trimethyl indium gas and hydrogen gas 800 to 1000 SCCM, and hydrogen gas 20 SLM are supplied. did.
Other film forming conditions were the same as in Example 1.
[0038]
Conventionally, in the vapor phase thin film growth using at least two kinds of source gases having different pyrolysis temperatures as in Example 2, the pyrolysis is performed in the order from the source gas having the lower pyrolysis temperature. Therefore, it is difficult to maintain the uniformity of the composition in the thin film when the distance from the source gas supply port is increased because the material is deposited on the susceptor before reaching the object to be processed. For example, in the case of trimethylindium gas and trimethylgallium gas, trimethylindium has a decomposition temperature of about 350 ° C., which is lower than that of trimethylgallium, which is 465 ° C. It has been difficult to maintain the uniformity of the composition of indium and gallium in the deposited thin film.
[0039]
However, in this example, as in Example 1, in the three 3 inch GaAs wafers and InP wafers prepared for each thin film, the film thickness variations in the formed InGaP, InGaAlP, and InGaAs films were as follows. Within ± 1.0% within the wafer surface, each composition variation was within ± 0.5% within the wafer surface, and within ± 0.2% between each wafer in the batch.
As a result, it was possible to increase the production amount per batch of the film forming operation by about 1.7 times.
[0040]
(Comparative Example 1)
The object to be processed, source gas, carrier gas, susceptor and heater were the same as in the example, and the heating conditions of the susceptor were set to 700 ° C. on the GaAs wafer.
The supply amount of gas is arsine gas 200 SCCM, hydrogen gas 20 SLM, and a mixed gas of trimethylgallium gas and hydrogen gas, 10 to 50 SCCM.
This mixed gas was supplied onto the susceptor rotation center.
[0041]
In this comparative example, the range in which a GaAs thin film that can be satisfactorily formed on a GaAs wafer can be formed is such that the center of the GaAs wafer and the susceptor rotation center are in the vicinity of 130 mm. For this reason, it was possible to install six 3-inch wafers on the susceptor.
Under the above conditions, a GaAs thin film was formed on a GaAs wafer.
As a result of this film forming operation, in the obtained six wafers, the variation in carrier concentration in the formed film was ± 15% within the wafer surface.
[0042]
(Comparative Example 2)
The object to be processed, source gas, carrier gas, susceptor and heater were the same as those in Example 2, and the susceptor heating conditions were set to 700 ° C. on a 3-inch GaAs wafer to form an InGaAlP film. It was.
The gas supply amount is: phosphine gas 400 SCCM and hydrogen gas 20 SLM, trimethyl gallium gas and hydrogen gas mixed gas 10 to 20 SCCM, trimethyl indium gas and hydrogen gas mixed gas 900 to 1000 SCCM, trimethyl aluminum gas and hydrogen gas mixed The gas was 50 to 100 SCCM and the hydrogen gas was 20 SLM.
Other film forming conditions are the same as those in Comparative Example 1.
As a result of this film forming operation, in the six GaAs wafers prepared, the film thickness variation in the formed film film is ± 3.5% within the wafer surface, and each composition variation is ± 2 within the wafer surface. .5%.
[0043]
【Effect of the invention】
As described above in detail, the present invention includes a heater, a susceptor that rotates while being heated by the heater, and at least two source gas passages that supply source gas to an object to be processed installed on the susceptor. A vapor phase thin film growth apparatus for forming a desired thin film on the object to be processed,
By controlling the temperature of the raw material gas flow path according to the thermal decomposition temperature of the raw material gas, film formation is performed without impairing the uniformity of the film thickness and carrier concentration of the thin film formed on the object to be processed. It has become possible to increase production per batch of operation.
[Brief description of the drawings]
FIG. 1 is a schematic view of a vertical section of a vapor phase thin film growth apparatus according to the present invention.
FIG. 2 is a schematic view of a vertical cross section of a vapor phase thin film growth apparatus according to the prior art.
[Explanation of symbols]
1. Reaction chamber 2. 2. Susceptor Heater 4. 4. Object to be processed 5. Gas supply port for source gas having a high thermal decomposition temperature 6. Gas supply port for raw material gas having a low thermal decomposition temperature Cooling mechanism 8. 8. Material gas flow path with high pyrolysis temperature Low temperature of raw material gas with low pyrolysis temperature10. Susceptor rotating shaft 13. Gas exhaust port 16. Source gas supply nozzle

Claims (6)

A heater,
A susceptor that rotates while being heated by the heater;
There are at least two source gas flow paths that are installed on the susceptor and supply source gas to a plurality of objects to be processed that have the same rotational center as the susceptor, and a desired gas channel is provided on the object to be processed. A vapor phase thin film growth apparatus for forming a thin film,
The source gas channel is formed by a substantially conical source gas supply nozzle having the same center axis as the rotation center of the susceptor with the bottom surface facing the susceptor , and is different for source gases having different pyrolysis temperatures. A source gas channel,
At least one of the source gas flow paths is formed on the susceptor or the target object at a position closer to the target object than the bisector of the distance connecting the susceptor, the rotation center, and the center of the target object. A vapor phase thin film growth apparatus having a gas supply port for supplying a gas. The vapor phase thin film growth apparatus according to claim 1 , wherein at least one of the source gas channels has a cooling mechanism for cooling the source gas in the source gas supply nozzle . After at least one other source gas channel of the source gas channel flows through the source gas supply nozzle at an angle that is perpendicular or nearly perpendicular to the surface of the susceptor on which the target object is placed, 2. The vapor phase thin film growth apparatus according to claim 1 , wherein the vapor phase thin film growth apparatus flows between a surface on which the object to be processed of the susceptor is placed and a bottom surface of the source gas supply nozzle . A source gas is supplied to a target object that is disposed on a susceptor that rotates while being heated and is arranged in the same manner as the center of rotation of the susceptor by using at least two source gas flow paths, A vapor phase thin film growth method for forming a desired thin film on a body,
At least a source gas channel formed for source gases having different pyrolysis temperatures formed in a substantially conical source gas supply nozzle having a bottom surface facing the susceptor and having the same center axis as the rotation center of the susceptor. Using one, a raw material gas is supplied onto the susceptor or the object to be processed at a position closer to the object to be processed than the bisector of the distance connecting the susceptor, the rotation center, and the center of the object to be processed, A vapor phase thin film growth method, comprising forming a desired thin film on the object to be processed. 5. The vapor phase thin film growth method according to claim 4, wherein the source gas passing therethrough is cooled by a cooling mechanism provided in at least one of the source gas flow paths. After supplying the source gas at an angle that is perpendicular or nearly perpendicular to the surface of the susceptor on which the object is mounted, using at least one other source gas channel,
5. The vapor phase thin film growth method according to claim 4, wherein the source gas is allowed to flow between a surface of the susceptor on which the object to be processed is placed and a bottom surface of the source gas supply nozzle.

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