JP4904427B2 - 電流センサ - Google Patents

電流センサ Download PDF

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Publication number
JP4904427B2
JP4904427B2 JP2010281828A JP2010281828A JP4904427B2 JP 4904427 B2 JP4904427 B2 JP 4904427B2 JP 2010281828 A JP2010281828 A JP 2010281828A JP 2010281828 A JP2010281828 A JP 2010281828A JP 4904427 B2 JP4904427 B2 JP 4904427B2
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JP
Japan
Prior art keywords
current
conductor portion
substrate
current conductor
hall effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2010281828A
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English (en)
Japanese (ja)
Other versions
JP2011102807A (ja
Inventor
テイラー，ウィリアム・ピー
ドゥーグ，マイケル・シー
シャーマ，ニルマル
ギャグノン，ジェイ
マングタニ，ヴィジャイ
ディッキンソン，リチャード
フリードリッヒ，アンドレアス・ペー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Allegro Microsystems LLC
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Allegro Microsystems LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/140,250 external-priority patent/US6995315B2/en
Priority claimed from US11/144,970 external-priority patent/US7166807B2/en
Priority claimed from US11/336,602 external-priority patent/US7075287B1/en
Priority claimed from US11/401,160 external-priority patent/US7476816B2/en
Priority claimed from US11/383,021 external-priority patent/US20060219436A1/en
Application filed by Allegro Microsystems LLC filed Critical Allegro Microsystems LLC
Publication of JP2011102807A publication Critical patent/JP2011102807A/ja
Application granted granted Critical
Publication of JP4904427B2 publication Critical patent/JP4904427B2/ja
Active legal-status Critical Current
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
    • G01R15/202—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using Hall-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
    • H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
    • H01L2224/37001—Core members of the connector
    • H01L2224/37099—Material
    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/37147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73221—Strap and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Measurement Of Current Or Voltage (AREA)
JP2010281828A 2005-05-27 2010-12-17 電流センサ Active JP4904427B2 (ja)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
US11/140,250 US6995315B2 (en) 2003-08-26 2005-05-27 Current sensor
US11/140,250 2005-05-27
US11/144,970 US7166807B2 (en) 2003-08-26 2005-06-03 Current sensor
US11/144,970 2005-06-03
US11/336,602 US7075287B1 (en) 2003-08-26 2006-01-20 Current sensor
US11/336,602 2006-01-20
US11/401,160 US7476816B2 (en) 2003-08-26 2006-04-10 Current sensor
US11/401,160 2006-04-10
US11/383,021 US20060219436A1 (en) 2003-08-26 2006-05-12 Current sensor
US11/383,021 2006-05-12

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2008513632A Division JP5468776B2 (ja) 2005-05-27 2006-05-23 電流センサ

Publications (2)

Publication Number Publication Date
JP2011102807A JP2011102807A (ja) 2011-05-26
JP4904427B2 true JP4904427B2 (ja) 2012-03-28

Family

ID=44015214

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2010281828A Active JP4904427B2 (ja) 2005-05-27 2010-12-17 電流センサ
JP2010281841A Active JP5248588B2 (ja) 2005-05-27 2010-12-17 電流センサ
JP2010281774A Active JP5255046B2 (ja) 2005-05-27 2010-12-17 電流センサ
JP2010281804A Active JP5248587B2 (ja) 2005-05-27 2010-12-17 電流センサ

Family Applications After (3)

Application Number Title Priority Date Filing Date
JP2010281841A Active JP5248588B2 (ja) 2005-05-27 2010-12-17 電流センサ
JP2010281774A Active JP5255046B2 (ja) 2005-05-27 2010-12-17 電流センサ
JP2010281804A Active JP5248587B2 (ja) 2005-05-27 2010-12-17 電流センサ

Country Status (1)

Country Link
JP (4) JP4904427B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8907437B2 (en) * 2011-07-22 2014-12-09 Allegro Microsystems, Llc Reinforced isolation for current sensor with magnetic field transducer
CH707687B1 (de) 2013-03-08 2016-09-15 Melexis Technologies Nv Stromsensor.
US9190606B2 (en) 2013-03-15 2015-11-17 Allegro Micosystems, LLC Packaging for an electronic device
US10345343B2 (en) 2013-03-15 2019-07-09 Allegro Microsystems, Llc Current sensor isolation
US9810721B2 (en) * 2015-12-23 2017-11-07 Melexis Technologies Sa Method of making a current sensor and current sensor
JP2017134022A (ja) * 2016-01-29 2017-08-03 旭化成エレクトロニクス株式会社 電流センサ及び製造方法
CN113866475B (zh) * 2021-09-30 2025-02-18 意瑞半导体（上海）有限公司 电流传感器的引线框架及电流传感器
US11644485B2 (en) 2021-10-07 2023-05-09 Allegro Microsystems, Llc Current sensor integrated circuits
US11768230B1 (en) 2022-03-30 2023-09-26 Allegro Microsystems, Llc Current sensor integrated circuit with a dual gauge lead frame

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4425596A (en) * 1980-09-26 1984-01-10 Tokyo Shibaura Denki Kabushiki Kaisha Electric circuit breaker
JP2001165963A (ja) * 1999-12-09 2001-06-22 Sanken Electric Co Ltd ホール素子を備えた電流検出装置
JP2002267692A (ja) * 2001-03-08 2002-09-18 Yazaki Corp 電流センサ
TWI273266B (en) * 2001-11-01 2007-02-11 Asahi Kasei Emd Corp Current sensor and current sensor manufacturing method
US7709754B2 (en) * 2003-08-26 2010-05-04 Allegro Microsystems, Inc. Current sensor

Also Published As

Publication number Publication date
JP2011069837A (ja) 2011-04-07
JP2011069838A (ja) 2011-04-07
JP5255046B2 (ja) 2013-08-07
JP2011075576A (ja) 2011-04-14
JP5248587B2 (ja) 2013-07-31
JP5248588B2 (ja) 2013-07-31
JP2011102807A (ja) 2011-05-26

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