JP4885433B2 - 半導体ポリマーおよびそれを用いたデバイス - Google Patents
半導体ポリマーおよびそれを用いたデバイス Download PDFInfo
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- JP4885433B2 JP4885433B2 JP2004242143A JP2004242143A JP4885433B2 JP 4885433 B2 JP4885433 B2 JP 4885433B2 JP 2004242143 A JP2004242143 A JP 2004242143A JP 2004242143 A JP2004242143 A JP 2004242143A JP 4885433 B2 JP4885433 B2 JP 4885433B2
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- Prior art keywords
- polymer
- thienylene
- arylene
- thin film
- film transistor
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- 229920000642 polymer Polymers 0.000 title claims description 93
- 239000004065 semiconductor Substances 0.000 title claims description 59
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- 239000000758 substrate Substances 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 28
- 229920001721 polyimide Polymers 0.000 claims description 16
- 238000007639 printing Methods 0.000 claims description 16
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- 229920000728 polyester Polymers 0.000 claims description 13
- JESXATFQYMPTNL-UHFFFAOYSA-N 2-ethenylphenol Chemical compound OC1=CC=CC=C1C=C JESXATFQYMPTNL-UHFFFAOYSA-N 0.000 claims description 12
- 239000004417 polycarbonate Substances 0.000 claims description 12
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- 238000006116 polymerization reaction Methods 0.000 claims description 12
- 238000004528 spin coating Methods 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 239000004793 Polystyrene Substances 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
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- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 claims description 3
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- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 30
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- 125000000217 alkyl group Chemical group 0.000 description 28
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 description 20
- 125000004432 carbon atom Chemical group C* 0.000 description 16
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- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 15
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- 125000000732 arylene group Chemical group 0.000 description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 10
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- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 229910052736 halogen Inorganic materials 0.000 description 7
- 150000002367 halogens Chemical class 0.000 description 7
- 239000000178 monomer Substances 0.000 description 7
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 7
- 239000000047 product Substances 0.000 description 7
- 238000003756 stirring Methods 0.000 description 7
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 7
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Chemical group CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 6
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 6
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- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 6
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 6
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 6
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 6
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- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
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- 125000001424 substituent group Chemical group 0.000 description 5
- QBYCAKNGTBMQHW-UHFFFAOYSA-N 2-(2,5-dioctoxy-4-thiophen-2-ylphenyl)thiophene Chemical compound CCCCCCCCOC=1C=C(C=2SC=CC=2)C(OCCCCCCCC)=CC=1C1=CC=CS1 QBYCAKNGTBMQHW-UHFFFAOYSA-N 0.000 description 4
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
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- FYDRZCVWJXJVHG-UHFFFAOYSA-N 2-[2,5-dioctoxy-4-[5-(3-octylthiophen-2-yl)thiophen-2-yl]phenyl]-5-(3-octylthiophen-2-yl)thiophene Chemical compound CCCCCCCCOC=1C=C(C=2SC(=CC=2)C2=C(C=CS2)CCCCCCCC)C(OCCCCCCCC)=CC=1C(S1)=CC=C1C=1SC=CC=1CCCCCCCC FYDRZCVWJXJVHG-UHFFFAOYSA-N 0.000 description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 3
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- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 3
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- QFMZQPDHXULLKC-UHFFFAOYSA-N 1,2-bis(diphenylphosphino)ethane Chemical compound C=1C=CC=CC=1P(C=1C=CC=CC=1)CCP(C=1C=CC=CC=1)C1=CC=CC=C1 QFMZQPDHXULLKC-UHFFFAOYSA-N 0.000 description 2
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- DQBAOWPVHRWLJC-UHFFFAOYSA-N barium(2+);dioxido(oxo)zirconium Chemical compound [Ba+2].[O-][Zr]([O-])=O DQBAOWPVHRWLJC-UHFFFAOYSA-N 0.000 description 1
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- 239000004645 polyester resin Substances 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920005596 polymer binder Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920005990 polystyrene resin Polymers 0.000 description 1
- 238000002203 pretreatment Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 238000010898 silica gel chromatography Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
- 238000004809 thin layer chromatography Methods 0.000 description 1
- RCHUVCPBWWSUMC-UHFFFAOYSA-N trichloro(octyl)silane Chemical compound CCCCCCCC[Si](Cl)(Cl)Cl RCHUVCPBWWSUMC-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- C07D—HETEROCYCLIC COMPOUNDS
- C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
- C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
- C07D333/04—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom
- C07D333/06—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to the ring carbon atoms
- C07D333/08—Hydrogen atoms or radicals containing only hydrogen and carbon atoms
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- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- H—ELECTRICITY
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K85/151—Copolymers
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- Thin Film Transistor (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Description
(I)
(IV−a)
(IV−b)
(IV−a)
(IV−b)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
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[化32]
スキーム 1
a)デバイスの組立(試験用デバイス):
基本的なデバイス構造として、図3に模式的に示したようなトップコンタクト型薄膜トランジスタ構成を選択した。
電界効果トランジスタの性能評価は、ケースレー4200SCS半導体特性評価システムを使用して、環境条件下ブラックボックス中で実施した。キャリア移動度のμは、次式(1)に従って、飽和領域(ゲート電圧、VG<ソース−ドレイン電圧、VSD)におけるデータから計算した:
[数1]
ISD=Ciμ(W/2L)(VG−VT)2 (1)
公知の配向規則性のポリチオフェンである、一般にP3HTと呼ばれているポリ(3−ヘキシチオフェン−2,5−ジイル)を使用して、一連の比較用の薄膜トランジスタを作成した。この材料は、アルドリッチ・ケミカルから購入したもので、そのクロロベンゼン溶液をメタノールから沈殿させることを3回連続して行って、精製した。
[表1]
移動度 : 約1.2×10−2cm2/V・秒
初期オンオフ比 : 約2×103
5日後のオンオフ比: 5〜10
a)1,4−ビス(2−チエニル)−2,5−ジオクチルオキシベンゼン(V−a):
250ミリリットルの丸底フラスコ中不活性アルゴン雰囲気下で、5ミリリットルのテトラヒドロフラン(THF)に懸濁させたマグネシウムの切粉(0.975グラム、40.095ミリモル)を機械的に撹拌させながら、15ミリリットルの無水THF中に1,4−ジブロモ−2,5−ジオクチルオキシベンゼン(6.580グラム、13.365ミリモル)を溶解させた溶液を、20分かけて徐々に添加した。得られた混合物を、60℃で3.5時間撹拌した。次いで、得られた混合物を、250ミリリットルの丸底フラスコ中不活性雰囲気下で、45ミリリットルの無水THF中、2−ブロモチオフェン(5.447グラム、33.412ミリモル)と[1,3−ビス(ジフェニルホスフィノエタン)]ジクロロニッケル(II)(0.350グラム、0.663ミリモル)との混合物に添加し、24時間還流させた。次いで、その反応混合物を200ミリリットルの酢酸エチルで希釈し、水で2回洗浄してから、無水硫酸マグネシウムを用いて脱水させた。溶媒を蒸発させて得られた褐色の固形物を、シリカゲルのカラムクロマトグラフィで精製し、再結晶させると、1,4−ビス(2−チエニル)−2,5−ジオクチルオキシベンゼンが淡黄色の結晶性生成物として45パーセントの収率で得られた。
[表2]
1HNMR(CDCl3):δ7.52(d,2H)、7.35(d,2H)、7.26(s,2H)、7.12(t,2H)、1.58〜1.20(m、20H)、1.90(m,4H)、0.92(t,6H).
上記aで調製した1,4−ビス(2−チエニル)−2,5−ジオクチルオキシベンゼン(0.50グラム、1.00ミリモル)の10ミリリットル、クロロベンゼン溶液を、50ミリリットル丸底フラスコ中乾燥雰囲気下で、5ミリリットルのクロロベンゼン中FeCl3(0.400グラム、2.466ミリモル)の混合物に、撹拌しながら徐々に添加した。得られた混合物を、50℃で1時間加熱後、乾燥空気のブランケットのもとで、40℃、24時間加熱した。上記の加熱重合が終わったら、その混合物を、20ミリリットルのジクロロメタンを用いて希釈し、水で3回洗浄した。分離した有機相を200ミリリットルの7.5パーセントアンモニア水溶液と共に30分間撹拌し、次いで水で3回洗浄してからメタノール中に注いで、チエニレン−アリーレンポリマー粗生成物を沈殿させ、これをメタノール、ヘキサンおよびクロロベンゼンを用いたソックスレー抽出により、精製した。THF可溶分の分子量を、GPC法を用いてポリスチレン標準と比較すると、Mw=4,600、Mn=4,200であった。
上で調製したチエニレン−アリーレン半導体ポリマー(2)を使用し、本明細書に説明した一般的な方法に従って、環境条件下で薄膜トランジスタデバイスを作成した。環境上の酸素や光を遮ることは特には行わなかった。先にP3HTの試験用デバイスの場合と同じ寸法(W=5,000μm、L=60μm)を用いると、ポリマー(2)についての少なくとも5つのトランジスタからの平均的な性質が、以下のように得られた。
[表3]
移動度 : 約5.5×10−3cm2/V・秒
初期オンオフ比 : 約9.0×105
5日後のオンオフ比 : 約6.0×105
30日後のオンオフ比: 約8.0×104
a)1,4−ビス(5−ブロモ−2−チエニル)−2,5−ジオクチルオキシベンゼン:
250ミリリットルの丸底フラスコ中、25ミリリットルのジクロロメタンと25ミリリットルの酢酸の混合物中に溶解させた1,4−ビス(2−チエニル)−2,5−ジオクチルオキシベンゼン(1.42グラム、2.847ミリモル)の溶液をよく撹拌しながら、N−ブロモスクシンイミド(1.031グラム、5.794ミリモル)を添加した。この反応混合物を終夜、18〜23時間撹拌してから、薄層クロマトグラフィで調べた。生成物をろ過で集め、メタノールで洗浄すると、1.69グラム(90.4パーセント)の1,4−ビス[2−(5−ブロモチエニル)]−2,5−ジオクチルオキシベンゼンが、白黄色の固形物として得られた。
[表4]
1HNMR(CDCl3):δ7.20(s,2H)、7.08(d,2H)、4.10(t,4H)、1.90(m,4H)、1.60〜1.20(m,20H)、0.92(t,6H).
250ミリリットルの丸底フラスコ中不活性アルゴン雰囲気下で、3ミリリットルのテトラヒドロフラン(THF)に懸濁させたマグネシウムの削り屑(0.238グラム、9.79ミリモル)を機械的に撹拌させながら、7ミリリットルの無水THF中に2−ブロモ−3−オクチルチオフェン(1.800グラム、6.533ミリモル)を溶解させた溶液を、20分かけて徐々に添加した。得られた混合物を60℃で4時間撹拌し、次いで冷却して室温まで戻した。次いで、得られた混合物を、250ミリリットルの丸底フラスコ中不活性雰囲気下で、20ミリリットルの無水THF中、1,4−ビス(5−ブロモ−2−チエニル)−2,5−ジオクチルオキシベンゼン(1.650グラム、2.513ミリモル)と[1,3−ビス(ジフェニルホスフィノプロパン)]ジクロロニッケル(II)(0.057グラム、0.105ミリモル)との混合物にカニューレを介して添加し、48時間還流させた。次いで、その反応混合物を200ミリリットルの酢酸エチルで希釈し、水で2回洗浄してから、無水硫酸マグネシウムを用いて脱水させた。溶媒を蒸発させて得られた褐色の固形物を、シリカゲルのカラムクロマトグラフィで精製し、再結晶させると、1,4−ビス[5−(3−オクチル−2−チエニル)−2−チエニル]−2,5−ジオクチルオキシベンゼンが黄色の結晶性生成物として30パーセントの収率で得られた。
[表5]
1HNMR(CDCl3):δ7.52(d,2H)、7.25(s,2H)、7.18(d,2H)、7.12(d,2H)、6.98(d,2H)、4.10(t,4H)、2.82(t,4H)、1.94(m,4H)、1.68(m,4H)、1.58〜1.20(m,40H)、0.90(m,12H).
7ミリリットルのクロロベンゼンに溶解させた1,4−ビス[5−(3−オクチル−2−チエニル)−2−チエニル]−2,5−ジオクチルオキシベンゼン(0.35グラム、0.381ミリモル)の溶液を、50ミリリットル丸底フラスコ中乾燥雰囲気下で、3ミリリットルのクロロベンゼン中FeCl3(0.3グラム、1.849ミリモル)の混合物に、撹拌しながら徐々に添加した。得られた混合物を、乾燥空気のブランケットのもとで、65℃、20時間撹拌した。重合が終わったら、その混合物を、20ミリリットルのジクロロメタンを用いて希釈し、水で3回洗浄した。分離した有機相を100ミリリットルの7.5パーセントアンモニア水溶液と共に半時間撹拌し、水で再度洗浄してから、メタノール中に注いで、チエニレン−アリーレンポリマー粗製物を沈殿させ、これをメタノール、ヘキサンおよびクロロベンゼンを用いたソックスレー抽出により、精製した。THF可溶分の分子量を、GPC法を用いてポリスチレン標準と比較すると、Mw=9,600、Mn=6,300であった。
上で調製したチエニレン−アリーレンポリマーを使用し、本明細書に説明した一般的な方法に従って、環境条件下で薄膜トランジスタデバイスを作成した。環境上の酸素や光を遮ることは特には行わなかった。先に述べたP3HTの試験用デバイスの場合と同じ寸法(W=5,000μm、L=60μm)を用いると、チエニレン−アリーレン半導体ポリマー(8)を用いたTFTについての少なくとも5つのトランジスタからの平均的な性質が、以下のように得られた。
[表6]
移動度 : 0.9〜1.2×10−2cm2/V・秒
初期オンオフ比 : 約1.5×106
5日後のオンオフ比 : 約9×105
30日後のオンオフ比 : 約2×105
<付記>
(1)請求項1に記載のデバイスであって、前記aおよびbが1または2である、デバイス。
(2)請求項4に記載の薄膜トランジスタデバイスであって、nは約50〜約500、または約100〜約350である、薄膜トランジスタデバイス。
(3)請求項1に記載のデバイスであって、前記チエニレン−アリーレンポリマーは、約1から約100の(I)または(II)の2,5−チエニレンセグメントと、約1から約100の(IIIa)、(IIIb)または(IIIc)のアリーレンセグメントと、を含む繰り返しセグメントを有する、デバイス。
Claims (4)
- 請求項2に記載の薄膜トランジスタであって、
前記基板は、ポリエステルと、ポリカーボネートと、ポリイミドと、のいずれかのプラスチックシートであり、
前記ゲート、ソースおよびドレイン電極は、それぞれ独立して、金と、ニッケルと、アルミニウムと、白金と、インジウムチタン酸化物と、導電性ポリマーと、分散媒中に導電性粒子の分散体を有する導電性インクまたはペーストと、のいずれかを有し、
前記ゲート絶縁層は、窒化ケイ素と、酸化ケイ素と、ポリエステル、ポリカーボネート、ポリアクリレート、ポリ(メタクリレート)、ポリ(ビニルフェノール)、ポリスチレン、ポリイミド、エポキシ樹脂に代表される絶縁性ポリマーと、ポリマー、ポリイミド、またはエポキシ樹脂中にナノサイズの金属酸化物粒子を分散させた無機・有機複合材料と、のいずれかを有し、
前記ソース/ドレイン電極および前記ゲート絶縁層は前記半導体層と接触していることを特徴とする薄膜トランジスタ。 - 請求項2に記載の薄膜トランジスタであって、
前記ポリマーは、スピンコート法、スタンプ印刷法、スクリーン印刷法、またはジェット印刷法の溶液プロセスにより形成されたチエニレン−アリーレン半導体層であり、
前記ソース/ドレイン電極および前記ゲート絶縁層は前記半導体層と接触していることを特徴とする薄膜トランジスタ。
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US5777070A (en) * | 1997-10-23 | 1998-07-07 | The Dow Chemical Company | Process for preparing conjugated polymers |
TWI249542B (en) * | 2001-11-09 | 2006-02-21 | Sumitomo Chemical Co | Polymer compound and polymer light-emitting device using the same |
US6770904B2 (en) * | 2002-01-11 | 2004-08-03 | Xerox Corporation | Polythiophenes and electronic devices generated therefrom |
-
2003
- 2003-08-22 US US10/646,389 patent/US7049629B2/en not_active Expired - Lifetime
-
2004
- 2004-08-20 CN CN200410057862.4A patent/CN1610143B/zh active Active
- 2004-08-23 JP JP2004242143A patent/JP4885433B2/ja active Active
Also Published As
Publication number | Publication date |
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JP2005072592A (ja) | 2005-03-17 |
US20050040394A1 (en) | 2005-02-24 |
CN1610143B (zh) | 2010-04-28 |
CN1610143A (zh) | 2005-04-27 |
US7049629B2 (en) | 2006-05-23 |
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