JP4885431B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4885431B2 JP4885431B2 JP2004168901A JP2004168901A JP4885431B2 JP 4885431 B2 JP4885431 B2 JP 4885431B2 JP 2004168901 A JP2004168901 A JP 2004168901A JP 2004168901 A JP2004168901 A JP 2004168901A JP 4885431 B2 JP4885431 B2 JP 4885431B2
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- Japan
- Prior art keywords
- film
- insulating film
- metal layer
- gate
- gate electrode
- Prior art date
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Description
12 ゲート絶縁膜
13 薄膜金属層
14 ゲート電極
Claims (1)
- 半導体基板と、
前記半導体基板上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたTiN、TaN及びRuOの混合物からなる薄膜金属層と、
前記薄膜金属層上に形成されたゲート電極とを有し、
前記薄膜金属層の厚さは1nm以下であり、
前記ゲート電極は、ポリシリコン、シリコンゲルマニウム又はこれらの積層構造である
ことを特徴とする半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004168901A JP4885431B2 (ja) | 2004-06-07 | 2004-06-07 | 半導体装置 |
Applications Claiming Priority (1)
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JP2004168901A JP4885431B2 (ja) | 2004-06-07 | 2004-06-07 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2005347705A JP2005347705A (ja) | 2005-12-15 |
JP4885431B2 true JP4885431B2 (ja) | 2012-02-29 |
Family
ID=35499754
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2004168901A Active JP4885431B2 (ja) | 2004-06-07 | 2004-06-07 | 半導体装置 |
Country Status (1)
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JP (1) | JP4885431B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011024340A1 (ja) * | 2009-08-27 | 2011-03-03 | パナソニック株式会社 | 半導体装置及びその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2695812B2 (ja) * | 1988-01-29 | 1998-01-14 | 株式会社東芝 | 半導体装置 |
KR0156156B1 (ko) * | 1995-12-14 | 1998-12-01 | 문정환 | 반도체 장치 제조방법 |
JP3287403B2 (ja) * | 1999-02-19 | 2002-06-04 | 日本電気株式会社 | Mis型電界効果トランジスタ及びその製造方法 |
JP2003023152A (ja) * | 2001-07-10 | 2003-01-24 | Sony Corp | Mis型トランジスタ及びその製造方法 |
JP2003273350A (ja) * | 2002-03-15 | 2003-09-26 | Nec Corp | 半導体装置及びその製造方法 |
US6861712B2 (en) * | 2003-01-15 | 2005-03-01 | Sharp Laboratories Of America, Inc. | MOSFET threshold voltage tuning with metal gate stack control |
US6873048B2 (en) * | 2003-02-27 | 2005-03-29 | Sharp Laboratories Of America, Inc. | System and method for integrating multiple metal gates for CMOS applications |
JP2005285809A (ja) * | 2004-03-26 | 2005-10-13 | Sony Corp | 半導体装置およびその製造方法 |
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2004
- 2004-06-07 JP JP2004168901A patent/JP4885431B2/ja active Active
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JP2005347705A (ja) | 2005-12-15 |
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