JP4863745B2 - 蛍光体粒子および波長変換器ならびに発光装置 - Google Patents
蛍光体粒子および波長変換器ならびに発光装置 Download PDFInfo
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- JP4863745B2 JP4863745B2 JP2006085112A JP2006085112A JP4863745B2 JP 4863745 B2 JP4863745 B2 JP 4863745B2 JP 2006085112 A JP2006085112 A JP 2006085112A JP 2006085112 A JP2006085112 A JP 2006085112A JP 4863745 B2 JP4863745 B2 JP 4863745B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
周期表第8族元素と周期表第16族元素との化合物、周期表第7族元素と周期表第16族元素との化合物、周期表第6族元素と周期表第16族元素との化合物、周期表第5族元素と周期表第16族元素との化合物、周期表第4族元素との周期表第16族元素との化合物、
周期表第2族元素と周期表第16族元素との化合物、カルコゲンスピネル類等が挙げられる。
周期表第13族元素と周期表第17族元素との化合物として、塩化タリウム(I)(TlCl)、臭化タリウム(I)(TlBr)、ヨウ化タリウム(I)(TlI)等、周期表第12族元素と周期表第16族元素との化合物として、酸化亜鉛(ZnO)、硫化亜鉛(ZnS)、セレン化亜鉛(ZnSe)、テルル化亜鉛(ZnTe)、酸化カドミウム(CdO)、硫化カドミウム(CdS)、セレン化カドミウム(CdSe)、テルル化カドミウム(CdTe)、硫化水銀(HgS)、セレン化水銀(HgSe)、テルル化水銀(HgTe)等、周期表第15族元素と周期表第16族元素との化合物として、硫化アンチモン(III)(Sb2S3)、セレン化アンチモン(III)(Sb2Se3)、テルル化アンチモン(III)(Sb2Te3)、硫化ビスマス(III)(Bi2S3)、セレン化ビスマス(III)(Bi2Se3)テルル化ビスマス(III)(Bi2Te3)等、周期表第11族元素と周期表第16族元素との化合物として、酸化銅(I)(Cu2O)等、周期表第11族元素と周期表第17族元素との化合物として、塩化銅(I)(CuCl)、臭化銅(I)(CuBr)、ヨウ化銅(I)(CuI)、ヨウ化銀(AgI)、塩化銀(AgCl)、臭化銀(AgBr)等、周期表第10族元素と周期表第16族元素との化合物として、酸化ニッケル(II)(NiO)等、周期表第9族元素との周期表第16族元素との化合物として、酸化コバルト(II)(CoO)、硫化コバルト(II)(CoS)等、周期表第8族元素と周期表第16族元素との化合物として、四酸化三鉄(Fe3O4)、硫化鉄(II)(FeS)等、周期表第7族元素と周期表第16族元素との化合物として、酸化マンガン(II)(MnO)等、周期表第6族元素と周期表第16族元素との化合物として、硫化モリブデン(IV)(MoS2)、酸化タングステン(IV)(WO2)等、周期表第5族元素と周期表第16族元素との化合物として、酸化バナジウム(II)(VO)、酸化バナジウム(II)(VO2)、酸化タンタル(V)(Ta2O5)等、周期表第4族元素との周期表第16族元素との化合物として、酸化チタン(TiO2、Ti2O5、Ti2O3、Ti5O9等)等、周期表第2族元素と周期表第16族元素との化合物として、硫化マグネシウム(MgS)、セレン化マグネシウム(MgSe)等、カルコゲンスピネル類として、酸化カドミウム(II)クロム(III)(CdCr2O4)、セレン化カドミウム(II)クロム(III)(CdCr2Se4)、硫化銅(II)クロム(III)(CuCr2S4)、セレン化水銀(II)クロム(III)(HgCr2Se4)等が挙げられる。
なお、測定して表に示した測定値はいずれも器を備えた波長変換器に関する値である。
3・・・中空粒状体
5・・・半導体超微粒子
7・・・液体
9・・・波長変換液
11・・・波長変換器
13・・・樹脂、マトリックス
15・・・発光素子
17・・・発光装置
Claims (9)
- 光を波長変換する半導体超微粒子と、液体とを含有してなるとともに含水率が0.1質量%以下であり、発光効率が40%以上の波長変換液が、透光性を有する平均粒径が0.05〜50μmの中空粒状体の中に封入されたことを特徴とする蛍光体粒子。
- 前記液体は、水の溶解度が0.1質量%以下であることを特徴とする請求項1記載の蛍光体粒子。
- 前記液体が変性シリコーンオイル、ジメチルシリコーンオイルの少なくとも1種からなることを特徴とする請求項1乃至2のうちいずれかに記載の蛍光体粒子。
- 前記液体がオレイルアミンまたはドデシルアミンの少なくとも1種からなることを特徴とする請求項1または2に記載の蛍光体粒子。
- 前記中空粒状体が前記半導体超微粒子から発せられた光を50%以上透過することを特徴とする請求項1乃至4のうちいずれかに記載の蛍光体粒子。
- 前記中空粒状体が、樹脂からなることを特徴とする請求項1乃至5のうちいずれかに記載の蛍光体粒子。
- 前記半導体超微粒子の平均粒子径が10nm以下であることを特徴とする請求項1乃至6のうちいずれかに記載の蛍光体粒子。
- 請求項1乃至7のうちいずれかに記載の蛍光体粒子を樹脂で固定してなることを特徴とする波長変換器。
- 発光素子と、該発光素子からの光を波長変換する請求項8に記載の波長変換器とを具備することを特徴とする発光装置。
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JP2006085112A JP4863745B2 (ja) | 2005-11-28 | 2006-03-27 | 蛍光体粒子および波長変換器ならびに発光装置 |
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JP2005342877 | 2005-11-28 | ||
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JP2006085112A JP4863745B2 (ja) | 2005-11-28 | 2006-03-27 | 蛍光体粒子および波長変換器ならびに発光装置 |
Publications (2)
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JP2007173755A JP2007173755A (ja) | 2007-07-05 |
JP4863745B2 true JP4863745B2 (ja) | 2012-01-25 |
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Cited By (4)
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US10964896B2 (en) | 2014-11-06 | 2021-03-30 | Postech Academy-Industry Foundation | Perovskite light-emitting device |
US11205757B2 (en) | 2014-11-06 | 2021-12-21 | Sn Display Co., Ltd. | Core-shell structured perovskite particle light-emitter, method of preparing the same and light emitting device using the same |
US11283035B2 (en) | 2014-11-06 | 2022-03-22 | Sn Display Co., Ltd. | Perovskite light emitting device containing exciton buffer layer and method for manufacturing same |
US11588079B2 (en) | 2014-11-06 | 2023-02-21 | Postech Academy-Industry Foundation | Wavelength converting particle, method for manufacturing wavelength converting particle, and light-emitting diode containing wavelength converting particle |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4960644B2 (ja) * | 2006-03-28 | 2012-06-27 | 京セラ株式会社 | 蛍光体粒子および波長変換器ならびに発光装置 |
JP4960645B2 (ja) * | 2006-03-30 | 2012-06-27 | 京セラ株式会社 | 波長変換器および発光装置 |
GB0821122D0 (en) | 2008-11-19 | 2008-12-24 | Nanoco Technologies Ltd | Semiconductor nanoparticle - based light emitting devices and associated materials and methods |
GB0916699D0 (en) * | 2009-09-23 | 2009-11-04 | Nanoco Technologies Ltd | Semiconductor nanoparticle-based materials |
GB0916700D0 (en) * | 2009-09-23 | 2009-11-04 | Nanoco Technologies Ltd | Semiconductor nanoparticle-based materials |
JP5905648B2 (ja) * | 2013-07-08 | 2016-04-20 | Nsマテリアルズ株式会社 | 半導体を利用した発光デバイス |
JP6401994B2 (ja) * | 2014-10-08 | 2018-10-10 | エルジー ディスプレイ カンパニー リミテッド | 液晶表示装置 |
JP6651002B2 (ja) * | 2016-03-28 | 2020-02-19 | 富士フイルム株式会社 | 半導体量子ドットの製造方法及び半導体量子ドット |
Family Cites Families (9)
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JP3412076B2 (ja) * | 1995-03-08 | 2003-06-03 | 株式会社リコー | 有機el素子 |
JP4126751B2 (ja) * | 1998-05-26 | 2008-07-30 | ソニー株式会社 | 表示装置および照明装置 |
JP2004107572A (ja) * | 2002-09-20 | 2004-04-08 | Sharp Corp | 蛍光体およびそれを含む照明装置と表示装置 |
JP4653662B2 (ja) * | 2004-01-26 | 2011-03-16 | 京セラ株式会社 | 波長変換器、発光装置、波長変換器の製造方法および発光装置の製造方法 |
JP4071724B2 (ja) * | 2004-02-09 | 2008-04-02 | 株式会社東芝 | Led照明装置 |
JP4163641B2 (ja) * | 2004-02-25 | 2008-10-08 | 株式会社東芝 | Led素子 |
JP4800669B2 (ja) * | 2005-06-07 | 2011-10-26 | セイコーインスツル株式会社 | 照明装置およびそれを用いた表示装置 |
JP4771837B2 (ja) * | 2005-11-28 | 2011-09-14 | 京セラ株式会社 | 波長変換器および発光装置 |
JP4960644B2 (ja) * | 2006-03-28 | 2012-06-27 | 京セラ株式会社 | 蛍光体粒子および波長変換器ならびに発光装置 |
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2006
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Cited By (6)
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US10964896B2 (en) | 2014-11-06 | 2021-03-30 | Postech Academy-Industry Foundation | Perovskite light-emitting device |
US11205757B2 (en) | 2014-11-06 | 2021-12-21 | Sn Display Co., Ltd. | Core-shell structured perovskite particle light-emitter, method of preparing the same and light emitting device using the same |
US11283035B2 (en) | 2014-11-06 | 2022-03-22 | Sn Display Co., Ltd. | Perovskite light emitting device containing exciton buffer layer and method for manufacturing same |
US11588079B2 (en) | 2014-11-06 | 2023-02-21 | Postech Academy-Industry Foundation | Wavelength converting particle, method for manufacturing wavelength converting particle, and light-emitting diode containing wavelength converting particle |
US11730051B2 (en) | 2014-11-06 | 2023-08-15 | Sn Display Co., Ltd. | Perovskite light-emitting device |
US11877460B2 (en) | 2014-11-06 | 2024-01-16 | Sn Display Co., Ltd. | Perovskite optoelectronic devices and method for manufacturing same |
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