JP4863432B2 - Light emitting diode and manufacturing method thereof - Google Patents

Light emitting diode and manufacturing method thereof Download PDF

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JP4863432B2
JP4863432B2 JP2005052167A JP2005052167A JP4863432B2 JP 4863432 B2 JP4863432 B2 JP 4863432B2 JP 2005052167 A JP2005052167 A JP 2005052167A JP 2005052167 A JP2005052167 A JP 2005052167A JP 4863432 B2 JP4863432 B2 JP 4863432B2
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light emitting
emitting diode
chip
current
current limiting
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JP2006237409A (en
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純二 宮下
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Citizen Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Description

本発明は発光ダイオード（ＬＥＤ：Light Emitting Diode）に係り、携帯電話あるいはＰＤＡ(Personal Digital Assistance)機器の点灯表示用、広くは検出制御用、照明用に適用できる発光ダイオード及びその製造方法に関する。   The present invention relates to a light emitting diode (LED), and more particularly to a light emitting diode that can be used for lighting display of a mobile phone or a PDA (Personal Digital Assistance) device, broadly for detection control and illumination, and a manufacturing method thereof.

近年発光ダイオードの利用はめざましく、点灯表示用から情報処理装置、生物育成にまで応用範囲は広がっている。また、最も効率の良い照明用としての発展も期待されている。   In recent years, the use of light-emitting diodes has been remarkable, and the application range has expanded from lighting display to information processing devices and biological breeding. It is also expected to develop for the most efficient lighting.

発光ダイオードの発光の強さや波長は半導体のＰＮ接合構造、すなわち材質やバンドギャップの大きさにより決まるが、その組み合わせは無限に近い。また、発光ダイオード製造時の条件、すなわちドープする不純物や生成する膜厚の制御は必ずしも一定ということは無く、同時に作製する１枚の発光ダイオード集積回路基板内であってもその電圧特性や輝度には多少のバラツキが生じてしまう。   The light emission intensity and wavelength of the light emitting diode are determined by the PN junction structure of the semiconductor, that is, the material and the size of the band gap, but the combinations are almost infinite. Further, the conditions at the time of manufacturing the light emitting diode, that is, the control of the impurity to be doped and the film thickness to be generated are not necessarily constant, and the voltage characteristics and the luminance can be improved even within the single light emitting diode integrated circuit substrate manufactured at the same time. Will cause some variation.

このため、発光ダイオードを点灯する回路は一般的には発光ダイオード１個毎に個別の電流制御を行うことが多いが、複数個の発光ダイオードを直列あるいは並列接続使用の必要性もあることから、これまでは発光ダイオードの特性を１個毎に測定して分類する方法などが行われていた。   For this reason, in general, a circuit for lighting a light emitting diode often performs individual current control for each light emitting diode, but there is a need to use a plurality of light emitting diodes in series or in parallel. Until now, a method of measuring and classifying the characteristics of light emitting diodes one by one has been performed.

以下、図面を用いて従来技術における発光ダイオードの用法について説明する。なお、ここでは主としてチップ型発光ダイオードに関するものである。   Hereinafter, the usage of the light emitting diode in the prior art will be described with reference to the drawings. Here, the present invention mainly relates to a chip type light emitting diode.

（従来のチップＬＥＤ）
図６は従来例のチップ型発光ダイオードの断面図であって、６００はチップ型発光ダイオード、６０１は発光ダイオードチップ、６２２はチップ基板、６２３、６２４は電極、６２５は導電接着層、６２６は接続ワイヤ、６２７は樹脂モールド、６２８、６２９は半田電極であって、チップ基板６２２の電極６２３上に導電接着層６２５により発光ダイオードチップ６０１のカソード側を固着導通し、前記チップ基板６２２の電極６２４と発光ダイオードチップ６０１のアノード側を接続ワイヤで導通している。また、電極６２３と電極６２４は前記チップ基板６２２端の半田電極６２８、６２９と導通している。 (Conventional chip LED)
FIG. 6 is a sectional view of a conventional chip type light emitting diode, in which 600 is a chip type light emitting diode, 601 is a light emitting diode chip, 622 is a chip substrate, 623 and 624 are electrodes, 625 is a conductive adhesive layer, and 626 is a connection. A wire, 627 is a resin mold, and 628 and 629 are solder electrodes. The cathode side of the light emitting diode chip 601 is fixedly connected to the electrode 623 of the chip substrate 622 by the conductive adhesive layer 625, and the electrode 624 of the chip substrate 622 is connected. The anode side of the light emitting diode chip 601 is electrically connected by a connection wire. The electrodes 623 and 624 are electrically connected to the solder electrodes 628 and 629 at the end of the chip substrate 622.

ここで、発光ダイオードチップ６０１は半導体基板（ウェーハー）上に多数個の発光ダイオードを同時に作製し、１個毎に切り出したチップ状の発光ダイオードであり、また、チップ基板６２２に発光ダイオードチップ６０１を搭載し、前記チップ基板６２２の半田電極６２８、６２９と導通接続し、前記発光ダイオードチップ６０１を透明もしくは半透明の樹脂でモールドしたものがチップ型発光ダイオード６００である。   Here, the light-emitting diode chip 601 is a chip-shaped light-emitting diode in which a large number of light-emitting diodes are simultaneously manufactured on a semiconductor substrate (wafer), and each light-emitting diode chip 601 is formed on a chip substrate 622. The chip type light emitting diode 600 is mounted and electrically connected to the solder electrodes 628 and 629 of the chip substrate 622, and the light emitting diode chip 601 is molded with a transparent or translucent resin.

図７ａおよび図７ｂは従来のチップ型発光ダイオードの用法例であって、図７ａは結線図、図７ｂは実装基板への搭載例を示す断面図である。   7a and 7b are usage examples of a conventional chip-type light emitting diode, FIG. 7a is a connection diagram, and FIG. 7b is a cross-sectional view showing an example of mounting on a mounting board.

図７ａにおいて、７０２は電流制限抵抗であって、電流制限抵抗７０２の一端は電源の正極端子７０５に、他端はチップ型発光ダイオード６００のアノード側７０３に、前記チップ型発光ダイオード６００のカソード側端子７０４は電源のコモン端子７０６にそれぞれ接続してあり、正極端子７０５とコモン端子７０６間に電圧を印加するとチップ型発光ダイオード６００には電流制限抵抗７０２で規制された電流が流れ、前記チップ型発光ダイオード６００が点灯する。   In FIG. 7a, reference numeral 702 denotes a current limiting resistor. One end of the current limiting resistor 702 is at the positive terminal 705 of the power source, the other end is at the anode side 703 of the chip type light emitting diode 600, and the cathode side of the chip type light emitting diode 600. The terminals 704 are respectively connected to the common terminal 706 of the power source, and when a voltage is applied between the positive terminal 705 and the common terminal 706, the current regulated by the current limiting resistor 702 flows through the chip type light emitting diode 600, and the chip type. The light emitting diode 600 is turned on.

正極端子７０５とコモン端子７０６間に印加する電圧をＶ、電流制限抵抗７０２の抵抗値をＲ、チップ型発光ダイオード６００の順方向電圧をＶＦとすると、前記チップ型発光ダイオード６００を流れる電流Ｉは、
Ｉ≒（Ｖ−ＶＦ）÷Ｒ
である。 When the voltage applied between the positive terminal 705 and the common terminal 706 is V, the resistance value of the current limiting resistor 702 is R, and the forward voltage of the chip type light emitting diode 600 is VF, the current I flowing through the chip type light emitting diode 600 is ,
I ≒ (V-VF) ÷ R
It is.

図７ｂは図７ａの結線図に示したチップ型発光ダイオードの実装断面図であって、７３２はマザーボード、７３３、７３４、７４０はマザーボード配線である。マザーボード７３２上のマザーボード配線７４０と７３４間には電流制限抵抗７０２を、マザーボード配線７３４、７３３間にはチップ型発光ダイオード６００を搭載し、リフロー加熱することで電流制限抵抗７０２の端部の半田７３８ａ、７３８ｂおよびとチップ型発光ダイオード６００の端部の半田７３８ｃ、７３８ｄはマザーボード配線７３３、７３４、７４０と導通接続して図７ａに示す結線となる。   7b is a mounting cross-sectional view of the chip type light emitting diode shown in the connection diagram of FIG. 7a. Reference numeral 732 denotes a mother board, and reference numerals 733, 734, and 740 denote motherboard wirings. A current limiting resistor 702 is mounted between the motherboard wirings 740 and 734 on the motherboard 732, and a chip type light emitting diode 600 is mounted between the motherboard wirings 734 and 733, and solder 738 a at the end of the current limiting resistor 702 by reflow heating. 738b and the solder 738c and 738d at the end of the chip type light emitting diode 600 are electrically connected to the motherboard wirings 733, 734 and 740 to form the connection shown in FIG. 7a.

図８ａおよび図８ｂは複数のチップ型発光ダイオードを定電圧電源で駆動した場合の従来例の結線図であって、６０１ａ、６０１ｂはチップ型発光ダイオード、７０２ａ、７０２ｂ、７０２ｃは電流制限抵抗、８３９ａ、８３９ｂは定電圧電源である。   8a and 8b are connection diagrams of a conventional example when a plurality of chip type light emitting diodes are driven by a constant voltage power source, wherein 601a and 601b are chip type light emitting diodes, 702a, 702b and 702c are current limiting resistors, and 839a. , 839b are constant voltage power supplies.

図８ａはチップ型発光ダイオード６０１ａ、６０１ｂを並列接続した場合であり、チップ型発光ダイオード６０１ａと６０１ｂには各々個別の電流制御のための電流制限抵抗７０２ａ、７０２ｂを直列に接続してある。これは、先に説明したように各チップ型発光ダイオードの順方向電圧ＶＦがバラツキで異なると定電圧電源８３９ａから同一電源電圧を印加してもチップ型発光ダイオードを流れる電流が違ってしまい、輝度にもバラツキが生じてしまうからで、各チップ型発光ダイオードに合わせて電流制限抵抗を選択接続する。   FIG. 8a shows a case where chip type light emitting diodes 601a and 601b are connected in parallel, and current limiting resistors 702a and 702b for individual current control are connected in series to the chip type light emitting diodes 601a and 601b, respectively. As described above, if the forward voltage VF of each chip type light emitting diode varies due to variations, even if the same power supply voltage is applied from the constant voltage power supply 839a, the current flowing through the chip type light emitting diode is different. Therefore, the current limiting resistor is selectively connected in accordance with each chip type light emitting diode.

実際のマザーボード実装には後述のように、あらかじめ各チップ型発光ダイオードの順方向電圧ＶＦを測定しておいて対応する値の電流制限抵抗を打ち分ける方法などが取られている。   As will be described later, actual motherboard mounting employs a method in which the forward voltage VF of each chip type light emitting diode is measured in advance and a current limiting resistor having a corresponding value is determined.

図８ｂはチップ型発光ダイオード６０１ａ、６０１ｂを直列接続した場合であり、電流制限抵抗７０２ｃとチップ型発光ダイオード６０１ａと６０１ｂを直列接続して定電圧電源８３９ｂから電源電圧を印加する。従って、前記チップ型発光ダイオード６０１ａと６０１ｂを流れる電流は同じであるが、各発光ダイオードの順方向電圧等の差により発光輝度には若干の違いを生ずる。   FIG. 8B shows a case where the chip type light emitting diodes 601a and 601b are connected in series. The current limiting resistor 702c and the chip type light emitting diodes 601a and 601b are connected in series and a power supply voltage is applied from a constant voltage power supply 839b. Therefore, although the currents flowing through the chip type light emitting diodes 601a and 601b are the same, there is a slight difference in the light emission luminance due to the difference in the forward voltage of each light emitting diode.

なお、図８ａの並列接続発光ダイオードと図８ｂの直列接続発光ダイオードでは各々の定電圧電源から電源電圧を印加するが、図８ｂの発光ダイオード６０１ａ、６０１ｂを直列接続する図８ｂの定電圧電源８３９ｂの供給電圧は図８ａの発光ダイオード６０１ａ、６０１ｂを並列接続した定電圧電源８３９ａの供給電圧より直列接続した発光ダイオードの段数に相当する順方向電圧分だけ高い。   8a and the serially connected light emitting diodes of FIG. 8b are applied with power supply voltages from the respective constant voltage power supplies, but the constant voltage power supply 839b of FIG. 8b in which the light emitting diodes 601a and 601b of FIG. 8b are connected in series. Is higher than the supply voltage of the constant voltage power supply 839a in which the light emitting diodes 601a and 601b of FIG. 8a are connected in parallel by the forward voltage corresponding to the number of stages of the light emitting diodes connected in series.

図８ｃは複数のチップ型発光ダイオードを並列接続して定電流電源で駆動した場合の従来例の結線図であって、８３９ｃは定電流電源である。ただし、並列接続するチップ型発光ダイオード６０１ａ、６０１ｂの順方向電圧のバラツキによる電流のアンバランスが生じやすく、チップ型発光ダイオードの単体または直列接続以外に定電流電源駆動は一般的には適用されることは少ない。   FIG. 8c is a connection diagram of a conventional example when a plurality of chip type light emitting diodes are connected in parallel and driven by a constant current power source, and 839c is a constant current power source. However, current imbalance is likely to occur due to variations in the forward voltage of the chip-type light emitting diodes 601a and 601b connected in parallel, and constant-current power supply driving is generally applied in addition to single or series connection of chip-type light emitting diodes. There are few things.

図９は従来のチップ型発光ダイオードの順方向電圧選別回路であり９０１は電圧計、９３９は定電流電源である。すなわち、チップ型発光ダイオード６０１に定電流電源９３９より一定電流を供給し、この時の前記チップ型発光ダイオード６０１の順方向電圧を測定して、類似の順方向電圧毎にランク分けし、適合する抵抗値の電流制限抵抗と組み合せを行う。あるいは、ランク毎に並列接続できるチップ型発光ダイオードをグループ分けするのである。なお、チップ型発光ダイオードのランク分けは発光ダイオードのチップをウェーハーのレベルで行うこともある。   FIG. 9 shows a forward voltage selection circuit of a conventional chip type light emitting diode, 901 is a voltmeter, and 939 is a constant current power source. That is, a constant current is supplied to the chip type light emitting diode 601 from the constant current power source 939, and the forward voltage of the chip type light emitting diode 601 at this time is measured, and ranked according to the similar forward voltage. Combine with the current limiting resistor of the resistance value. Alternatively, chip-type light emitting diodes that can be connected in parallel for each rank are grouped. The rank classification of the chip type light emitting diodes may be performed at the wafer level for the chips of the light emitting diodes.

すなわち、従来のチップ型発光ダイオードの駆動電流特性は大きくは順方向電圧に依存し、順方向電圧毎のランク分け、あるいはチップ型発光ダイオードに直列に接続する電流制限抵抗の抵抗値を変えて用途に応じた駆動電流の設定を行っていた。   In other words, the drive current characteristics of conventional chip-type light emitting diodes largely depend on the forward voltage, and can be used by ranking for each forward voltage or changing the resistance value of the current limiting resistor connected in series to the chip-type light emitting diode. The drive current was set according to the above.

特開２００４−１７７６２７JP 2004-177627 A 特開２００３−１８７９７７JP2003-187777

しかしながら、従来技術におけるチップ型発光ダイオードの用法では電流制限抵抗による電流の一定制御、あるいは順方向電圧の選別を行っても、最終的な輝度にばらつきが生じるという課題があった。これは、前述のように発光ダイオードを生成する際の材質や生成する膜厚の微妙な違いに起因するものと思われる。   However, the usage of the chip type light emitting diode in the prior art has a problem that the final luminance varies even if the constant current control by the current limiting resistor or the selection of the forward voltage is performed. This is considered to be caused by a subtle difference in the material and the film thickness when the light emitting diode is generated as described above.

（発明の目的）
本発明の目的は、チップ型発光ダイオードの輝度を前記チップ型発光ダイオード個々の電気的特性である電流や順方向電圧に関わりなく一定な輝度特性を有するチップ型発光ダイオードを製造する方法と、実装上も工数と使用部品点数削減ができるチップ型発光ダイオードを提供することにある。 (Object of invention)
SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a chip type light emitting diode having constant luminance characteristics regardless of current and forward voltage, which are electrical characteristics of the chip type light emitting diodes, and mounting the chip type light emitting diode. Another object of the present invention is to provide a chip type light emitting diode that can reduce the man-hours and the number of parts used.

上記目的を達成するため本発明の発光ダイオードの製造方法は、基板上に発光ダイオードチップを搭載し、前記基板と同一面上に設けた配線のための２つ電極の間に前記発光ダイオードチップと直列又は並列に接続する電流制限抵抗を形成した発光ダイオードの製造方法において、前記電流制限抵抗を除いて前記発光ダイオードチップの上を透明もしくは半透明の樹脂でモールドし、前記電極と電極の間にカーボン印刷で樹脂モールドされていない前記電流制限抵抗を形成し、前記発光ダイオードチップと前記電流制限抵抗に定電流を印加して前記発光ダイオードチップの輝度を一定の値になるように前記電流制限抵抗をレーザートリミングで調整するものであって、前記レーザートリミングは、前記電流制限抵抗が初期抵抗値のときは定電圧電源の出力電圧を発光ダイオードチップの規定の電圧より低くして発光ダイオードチップへの過電流を押さえ、トリミングの最終段階で前記規定の電圧となるように前記定電圧電源の出力電圧を調節するようにしたことを特徴とする発光ダイオードの製造方法。
 In order to achieve the above object, a method for manufacturing a light emitting diode according to the present invention includes mounting a light emitting diode chip on a substrate and placing the light emitting diode chip between two electrodes for wiring provided on the same plane as the substrate. In a method of manufacturing a light emitting diode having a current limiting resistor connected in series or in parallel, the light emitting diode chip is molded with a transparent or translucent resin except for the current limiting resistor, and between the electrodes. Forming the current limiting resistor that is not resin-molded by carbon printing, and applying a constant current to the light emitting diode chip and the current limiting resistor so that the luminance of the light emitting diode chip becomes a constant value. the been made to adjust the laser trimming, the laser trimming is constant-when the current limiting resistor is in the initial resistance value The output voltage of the constant voltage power supply is adjusted so that the output voltage of the power supply is lower than a specified voltage of the light emitting diode chip to suppress an overcurrent to the light emitting diode chip and become the specified voltage at the final stage of trimming. A method for producing a light-emitting diode, characterized by comprising:

すなわち、本発明は一定の電圧条件のもとで発光ダイオードと直列接続した抵抗器を前記発光ダイオードの輝度を測定しながら前記輝度が一定の値になるように前記抵抗器をトリミングするので前記発光ダイオードの順方向電圧特性に関わりなく、電圧−輝度特性が均一な電流制限抵抗付きチップ型発光ダイオードを提供できる。
That is, the present invention trims the resistor so that the luminance becomes a constant value while measuring the luminance of the light emitting diode with a resistor connected in series with the light emitting diode under a constant voltage condition. It is possible to provide a chip-type light emitting diode with a current limiting resistor having uniform voltage-luminance characteristics regardless of the forward voltage characteristics of the diode.

また、本発明は一定の電流条件のもとで発光ダイオードと並列接続した抵抗器を前記発光ダイオードの輝度を測定しながら前記輝度が一定の値になるように前記抵抗器をトリミングするので前記発光ダイオードの順方向電圧特性に関わりなく、電流−輝度特性が均一な電流調整抵抗付きチップ型発光ダイオードを提供できる。
 Further, the present invention trims the resistor so that the luminance becomes a constant value while measuring the luminance of the light emitting diode in a resistor connected in parallel with the light emitting diode under a constant current condition. It is possible to provide a chip-type light emitting diode with a current adjusting resistor having a uniform current-luminance characteristic regardless of the forward voltage characteristics of the diode.

すなわち、本発明によれば、チップ型発光ダイオードの輝度を前記チップ型発光ダイオード個々の電気的特性である電流や順方向電圧に関わりなく一定な輝度特性を有するチップ型発光ダイオードを製造する方法と、小型で省スペースに加えて実装上も工数と使用部品点数削減ができるチップ型発光ダイオードを提供できる。   That is, according to the present invention, there is provided a method of manufacturing a chip type light emitting diode having a constant luminance characteristic regardless of the current and forward voltage which are the electrical characteristics of the chip type light emitting diode. In addition to being small and space-saving, it is possible to provide a chip-type light emitting diode that can reduce the number of steps and the number of parts used in mounting.

以下、本発明の実施形態の説明であるが、はじめに本発明の電流制限抵抗付きチップ型発光ダイオードの輝度調整装置および前記電流制限抵抗付きチップ型発光ダイオードの構造について図面に基づいて説明する。   Hereinafter, although it is description of embodiment of this invention, the structure of the brightness | luminance adjustment apparatus of the chip type light emitting diode with a current limiting resistor of this invention and the said chip type light emitting diode with a current limiting resistor of this invention is demonstrated based on drawing first.

図１は本発明の発光ダイオードの輝度調整装置のシステム図であって、本発明の電流制限抵抗付きチップ型発光ダイオードに対応している。図２は前記電流制限抵抗付きチップ型発光ダイオードの断面図、図３は前記電流制限抵抗付きチップ型発光ダイオードの平面図を示す。   FIG. 1 is a system diagram of a brightness adjusting device for a light emitting diode according to the present invention, which corresponds to the chip type light emitting diode with a current limiting resistor according to the present invention. FIG. 2 is a sectional view of the chip type light emitting diode with current limiting resistor, and FIG. 3 is a plan view of the chip type light emitting diode with current limiting resistor.

図１において、１００は電流制限抵抗付きチップ型発光ダイオード、１０１は発光ダイオードチップ、１０２は電流制限抵抗、１１０は輝度調整装置１１１は受光装置、１１２はレーザー装置、１１３はレーザー照射光、１３９は定電圧電源である。   In FIG. 1, 100 is a chip type light emitting diode with a current limiting resistor, 101 is a light emitting diode chip, 102 is a current limiting resistor, 110 is a brightness adjusting device 111 is a light receiving device, 112 is a laser device, 113 is laser irradiation light, 139 is It is a constant voltage power supply.

すなわち、電流制限抵抗１０２と発光ダイオードチップ１０１を直列接続し、定電圧電源１３９から順方向電圧を印加して前記発光ダイオードチップ１０１を点灯する。この発光ダイオードチップ１０１の発光輝度を受光装置１１１で検出して一定の輝度になるまでレーザー装置１１２のレーザー照射光１１３で前記電流制限抵抗１０２をトリミングするのである。   That is, the current limiting resistor 102 and the light emitting diode chip 101 are connected in series, and a forward voltage is applied from the constant voltage power source 139 to light the light emitting diode chip 101. The light emission luminance of the light emitting diode chip 101 is detected by the light receiving device 111, and the current limiting resistor 102 is trimmed by the laser irradiation light 113 of the laser device 112 until the light emitting device has a constant luminance.

なお、電流制限抵抗１０２の初期抵抗値は低く、トリミングによって高抵抗に調整されるので、初期抵抗値のときは定電圧電源１３９の出力電圧を低くして発光ダイオードチップ１０１への過電流を押さえ、トリミングの最終段階で規定の電圧となるように前記定電圧電源１３９の出力電圧を調節できるようにしても良い。   Since the initial resistance value of the current limiting resistor 102 is low and is adjusted to a high resistance by trimming, the output voltage of the constant voltage power supply 139 is lowered to suppress overcurrent to the light emitting diode chip 101 when the initial resistance value is used. The output voltage of the constant voltage power supply 139 may be adjusted so that the voltage becomes a specified voltage at the final stage of trimming.

図２および図３に示す本発明の電流制限抵抗付きチップ型発光ダイオード１００おいて、２２２はチップ基板、２２３、２２４および２３０はチップ基板２２２上に形成した電極、２２５は導電接着層、２２６は接続ワイヤ、２２７は樹脂モールド、２２８、２２９は半田電極、１０２ａは前記電流制限抵抗１０２のレーザートリミング部である。   In the chip type light emitting diode 100 with current limiting resistor of the present invention shown in FIGS. 2 and 3, 222 is a chip substrate, 223, 224 and 230 are electrodes formed on the chip substrate 222, 225 is a conductive adhesive layer, 226 is Connection wires, 227 are resin molds, 228 and 229 are solder electrodes, and 102 a is a laser trimming portion of the current limiting resistor 102.

すなわち、チップ基板２２２上に形成した電極２２３に接着層で発光ダイオードチップ１０１のカソード側を導通固定し、電極２２４と前記発光ダイオードチップ１０１のアノード側を接続ワイヤ２２６で接続して前記発光ダイオードチップ１０１の上を透明もしくは半透明の樹脂でモールドする。また、電極２２４と電極２３０の間にはカーボン印刷で電流制限抵抗１０２を形成する。さらに、電極２２３と導通接続するように前記チップ基板２２２の端に半田電極２２８を形成し、電極２３０と導通接続するように前記チップ基板２２２のもう一端に半田電極２２９を形成する。

That is, the cathode side of the light-emitting diode chip 101 is conductively fixed to the electrode 223 formed on the chip substrate 222 with an adhesive layer, and the electrode 224 and the anode side of the light-emitting diode chip 101 are connected by the connection wire 226. 101 is molded with a transparent or translucent resin. Further, the current limiting resistor 102 is formed between the electrode 224 and the electrode 230 by carbon printing. Further, a solder electrode 228 is formed on the end of the chip substrate 222 so as to be conductively connected to the electrode 223, and a solder electrode 229 is formed on the other end of the chip substrate 222 so as to be conductively connected to the electrode 230.

かくして、前記チップ基板２２２上の半田電極２２９と２２８間に電流制限抵抗１０２と発光ダイオードチップ１０１の直列回路が形成されることになり、定電圧電源１３９より半田電極２２９に正極電圧、半田電極２２８に負極電圧を印加することで発光ダイオードチップ１０１を点灯し、前記発光ダイオードの輝度調整装置１１０により前記電流制限抵抗１０２をトリミングして一定の印加電圧条件のもとで前記発光ダイオードチップ１０１の輝度を一定の値に調整するのである。   Thus, a series circuit of the current limiting resistor 102 and the light emitting diode chip 101 is formed between the solder electrodes 229 and 228 on the chip substrate 222, and a positive voltage is applied to the solder electrode 229 from the constant voltage power supply 139. The light emitting diode chip 101 is turned on by applying a negative voltage to the light emitting diode, and the current limiting resistor 102 is trimmed by the brightness adjusting device 110 of the light emitting diode, so that the brightness of the light emitting diode chip 101 is obtained under a constant applied voltage condition. Is adjusted to a constant value.

すなわち、前記電流制限抵抗付きチップ型発光ダイオード１００は、一定電圧のもとで前記電流制限抵抗１０２と前記発光ダイオードチップ１０１の直列回路は、前記チップ基板２２２に搭載する前記発光ダイオードチップ１０１の電気的特性が異なっていても前記電流制限抵抗付きチップ型発光ダイオード１００の全体の駆動電圧と前記発光ダイオードチップ１０１の輝度は不変である。   That is, in the chip-type light emitting diode 100 with current limiting resistor, the series circuit of the current limiting resistor 102 and the light emitting diode chip 101 under a constant voltage is the electric circuit of the light emitting diode chip 101 mounted on the chip substrate 222. The overall driving voltage of the chip-type light emitting diode 100 with the current limiting resistor and the luminance of the light-emitting diode chip 101 are unchanged even if the physical characteristics are different.

従って、この電流制限抵抗付きチップ型発光ダイオード１００を複数個並列接続しても前記複数個全ての電流制限抵抗付きチップ型発光ダイオード１００の個々の発光輝度は全て同じレベルとなる。また、同一チップ基板上に電流制限抵抗が形成してあることからマザーボード等に発光ダイオードを搭載するに当たり、改めて抵抗器を実装する必要がなく、省スペースと抵抗器搭載の工数および部品点数の削減ができる。   Accordingly, even when a plurality of chip light emitting diodes 100 with current limiting resistors are connected in parallel, all of the plurality of chip light emitting diodes 100 with current limiting resistors have the same level. In addition, since the current limiting resistor is formed on the same chip substrate, there is no need to mount a resistor again when mounting a light emitting diode on a motherboard or the like, saving space and reducing the number of man-hours and parts required for mounting the resistor. Can do.

次に本発明の電流調整抵抗付きチップ型発光ダイオードの輝度調整装置および前記電流制限抵抗付きチップ型発光ダイオードの構造について図面に基づいて説明する。   Next, the brightness adjusting device for the chip type light emitting diode with current adjusting resistor and the structure of the chip type light emitting diode with current limiting resistor according to the present invention will be described with reference to the drawings.

図４は本発明の発光ダイオードの輝度調整装置のシステム図であって、本発明の電流調整抵抗付きチップ型発光ダイオードに対応している。図５は前記電流制限抵抗付きチップ型発光ダイオードの断面図を示す。   FIG. 4 is a system diagram of the brightness adjusting device for a light emitting diode according to the present invention, which corresponds to the chip type light emitting diode with a current adjusting resistor according to the present invention. FIG. 5 shows a cross-sectional view of the chip type light emitting diode with the current limiting resistor.

図４において、４００は電流調整抵抗付きチップ型発光ダイオード、４０２は電流調整抵抗、４３９は定電流電源である。   In FIG. 4, 400 is a chip type light emitting diode with a current adjusting resistor, 402 is a current adjusting resistor, and 439 is a constant current power source.

すなわち、電流調整抵抗４０２と発光ダイオードチップ１０１を並列接続し、定電流電源４３９から前記並列接続した電流調整抵抗４０２と発光ダイオードチップ１０１に順方向流を印加して前記発光ダイオードチップ１０１を点灯する。この発光ダイオードチップ１０１の発光輝度を受光装置１１１で検出して一定の輝度になるまでレーザー装置１１２のレーザー照射光１１３で前記電流調整抵抗４０２をトリミングするのである。   That is, the current adjustment resistor 402 and the light emitting diode chip 101 are connected in parallel, and a forward flow is applied from the constant current power source 439 to the parallel connection of the current adjustment resistor 402 and the light emitting diode chip 101 to turn on the light emitting diode chip 101. . The light emitting luminance of the light emitting diode chip 101 is detected by the light receiving device 111, and the current adjusting resistor 402 is trimmed with the laser irradiation light 113 of the laser device 112 until the luminance becomes constant.

なお、電流制限抵抗１０２の初期抵抗値は低く、トリミングによって高抵抗に調整されるので、初期抵抗値のときは定電流電源４３９の出力電流を小さくして発光ダイオードチップ１０１への過電流を押さえ、トリミングの最終段階で規定の電流となるように前記定電流電源４３９の出力電圧を調節できるようにしても良い。   Note that since the initial resistance value of the current limiting resistor 102 is low and is adjusted to a high resistance by trimming, the output current of the constant current power source 439 is reduced to suppress overcurrent to the light-emitting diode chip 101 at the initial resistance value. The output voltage of the constant current power source 439 may be adjusted so that the current becomes a specified current at the final stage of trimming.

図５に示す本発明の電流調整抵抗付きチップ型発光ダイオード４００おいて、５２２はチップ基板、５２３、５２４はチップ基板５２２上面に形成した電極、５３０、５３１はチップ基板５２２下面に形成した電極、４２５は接着層、５２６は接続ワイヤ、５２７は樹脂モールド、５２８、５２９は半田電極である。   In the chip type light emitting diode 400 with current adjusting resistor of the present invention shown in FIG. 5, 522 is a chip substrate, 523 and 524 are electrodes formed on the top surface of the chip substrate 522, 530 and 531 are electrodes formed on the bottom surface of the chip substrate 522, 425 is an adhesive layer, 526 is a connection wire, 527 is a resin mold, 528 and 529 are solder electrodes.

すなわち、チップ基板５２２上面に形成した電極５２２に接着層で発光ダイオードチップ１０１のカソード側を導通固定し、電極５２４と前記発光ダイオードチップ１０１のアノード側を接続ワイヤ５２６で接続して前記発光ダイオードチップ１０１の上を透明もしくは半透明の樹脂でモールドする。また、チップ基板５２２下面に形成した電極５３０と電極５３１の間にはカーボン印刷で電流調整抵抗４０２を形成する。さらに、電極５２３および電極５３０と導通接続するように前記チップ基板５２２の端に半田電極５２８を形成し、電極５２４および電極５３１と導通接続するように前記チップ基板５２２の他端に半田電極５２９を形成する。   That is, the cathode side of the light emitting diode chip 101 is conductively fixed to the electrode 522 formed on the upper surface of the chip substrate 522 with an adhesive layer, and the electrode 524 and the anode side of the light emitting diode chip 101 are connected by the connection wire 526. 101 is molded with a transparent or translucent resin. Further, a current adjustment resistor 402 is formed between the electrodes 530 and 531 formed on the lower surface of the chip substrate 522 by carbon printing. Further, a solder electrode 528 is formed at the end of the chip substrate 522 so as to be conductively connected to the electrode 523 and the electrode 530, and a solder electrode 529 is connected to the other end of the chip substrate 522 so as to be conductively connected to the electrode 524 and the electrode 531. Form.

かくして、前記チップ基板５２２上面の発光ダイオードチップ１０１と前記チップ基板５２２の下面に形成した電流調整抵抗４０２の並列回路が形成されることになり、定電流電源４３９より半田電極５２９に正極電圧、半田電極５２８に負極電圧を印加することで発光ダイオードチップ１０１を点灯し、前記発光ダイオードの輝度調整装置１１０により前記電流調整抵抗４０２をトリミングして一定の印加電流条件のもとで前記発光ダイオードチップ１０１の輝度を一定の値に調整するのである。   Thus, a parallel circuit of the light emitting diode chip 101 on the upper surface of the chip substrate 522 and the current adjustment resistor 402 formed on the lower surface of the chip substrate 522 is formed, and a positive voltage and solder are applied to the solder electrode 529 from the constant current power source 439. The light emitting diode chip 101 is turned on by applying a negative voltage to the electrode 528, and the current adjusting resistor 402 is trimmed by the brightness adjusting device 110 of the light emitting diode, and the light emitting diode chip 101 is subjected to a certain applied current condition. Is adjusted to a constant value.

すなわち、前記電流調整抵抗付きチップ型発光ダイオード４００は、一定電流のもとで前記電流調整抵抗４０２と前記発光ダイオードチップ１０１に流れる電流を分流しているので、前記チップ基板５２２に搭載する前記発光ダイオードチップ１０１の電気的特性が異なっていても前記電流調整抵抗付きチップ型発光ダイオード４００の全体の電流と前記発光ダイオードチップ１０１の輝度は不変である。   That is, since the chip type light emitting diode 400 with the current adjustment resistor shunts the current flowing through the current adjustment resistor 402 and the light emitting diode chip 101 under a constant current, the light emission mounted on the chip substrate 522 is performed. Even if the electrical characteristics of the diode chip 101 are different, the entire current of the chip type light emitting diode 400 with the current adjusting resistor and the luminance of the light emitting diode chip 101 are unchanged.

従って、この電流調整抵抗付きチップ型発光ダイオード４００を複数個直列接続しても前記複数個全ての電流調整抵抗付きチップ型発光ダイオード１００の個々の発光輝度は全て同じレベルとなる。また、電流調整抵抗付きチップ型発光ダイオード４００は同一チップ基板下面に電流調整抵抗が形成してあることからマザーボード等に前記電流調整抵抗付きチップ型発光ダイオード４００を搭載するスペースは従来のチップ型発光ダイオードと同じで良い。   Accordingly, even when a plurality of chip light emitting diodes 400 with current adjusting resistors are connected in series, the individual light emission luminances of all the plurality of chip light emitting diodes 100 with current adjusting resistors are all at the same level. Further, since the chip type light emitting diode 400 with current adjusting resistor has a current adjusting resistor formed on the lower surface of the same chip substrate, the space for mounting the chip type light emitting diode 400 with current adjusting resistor on the motherboard or the like is the conventional chip type light emitting. Same as diode.

以上、本発明の電流制限抵抗付きチップ型発光ダイオード１００の構造と前記電流制限抵抗付きチップ型発光ダイオード１００の輝度を測定して電流制限抵抗をトリミングする輝度調整装置１１０、および、電流調整抵抗付きチップ型発光ダイオード４００の構造と前記電流調整抵抗付きチップ型発光ダイオードの輝度を測定して電流調整抵抗をトリミングする輝度調整装置１１０について詳述したが、前者の輝度調整装置と後者の輝度調整装置は、いずれも本発明のチップ型発光ダイオードの輝度を測定して抵抗をレーザートリミングする機能は全く同じであり、輝度調整の対象とする電流制限抵抗付きチップ型発光ダイオードあるいは電流調整抵抗付きチップ型発光ダイオードの両者に共通の輝度調整装置である。   As described above, the structure of the chip type light emitting diode 100 with current limiting resistor of the present invention, the luminance adjusting device 110 for trimming the current limiting resistor by measuring the luminance of the chip type light emitting diode 100 with current limiting resistor, and with the current adjusting resistor The brightness adjusting device 110 for trimming the current adjusting resistor by measuring the structure of the chip light emitting diode 400 and the brightness of the chip light emitting diode with the current adjusting resistor has been described in detail. The former brightness adjusting device and the latter brightness adjusting device. Both have the same function of laser trimming the resistance by measuring the brightness of the chip type light emitting diode of the present invention, and the chip type light emitting diode with a current limiting resistor or the chip type with a current adjusting resistor to be subjected to brightness adjustment This is a brightness adjusting device common to both light emitting diodes.

また、図５において本発明の電流調整抵抗付きチップ型発光ダイオード４００の構造、すなわちチップ基板５２２上面に発光ダイオードチップ１０１を搭載し、チップ基板５２２下面にカーボン印刷で電流調整抵抗４０２を形成したが、同様に、図２および図３にもとづいて説明した本発明の電流制限抵抗付きチップ型発光ダイオード１００においても、電流制限抵抗１０２をチップ基板２２２の下面に形成できることは言うまでもない。また、逆に、本発明の電流調整抵抗付きチップ型発光ダイオード４００の電流調整抵抗４０２をチップ基板５２２上面に形成できる。   In FIG. 5, the structure of the chip type light emitting diode 400 with current adjusting resistor of the present invention, that is, the light emitting diode chip 101 is mounted on the upper surface of the chip substrate 522, and the current adjusting resistor 402 is formed on the lower surface of the chip substrate 522 by carbon printing. Similarly, it goes without saying that the current limiting resistor 102 can be formed on the lower surface of the chip substrate 222 also in the chip-type light emitting diode 100 with the current limiting resistor of the present invention described with reference to FIGS. 2 and 3. Conversely, the current adjustment resistor 402 of the chip type light emitting diode 400 with current adjustment resistor of the present invention can be formed on the upper surface of the chip substrate 522.

なお、前記本発明の電流制限抵抗付きチップ型発光ダイオード１００および電流調整抵抗付きチップ型発光ダイオード４００は単体のチップ基板２２２あるいは５２２にもとづいて説明したが、多量に作製する場合は前記チップ基板２２２あるいは５２２をマトリックス状に配列した１枚の基板上に前記電流制限抵抗付きチップ型発光ダイオード１００あるいは電流調整抵抗付きチップ型発光ダイオード４００を形成し、レーザートリミングを行った後に個々の単体チップに分割する手法もある。 The chip type light emitting diode 100 with current limiting resistor and the chip type light emitting diode 400 with current adjusting resistor according to the present invention have been described based on the single chip substrate 222 or 522. Alternatively, the chip light emitting diode 100 with current limiting resistor or the chip light emitting diode 400 with current adjusting resistor is formed on a single substrate in which 522 are arranged in a matrix, and after laser trimming, it is divided into individual single chips. There is also a technique to do.

以上に詳述したように、本発明は発光ダイオード個々の電気的特性である電流や順方向電圧に関わりなく一定な輝度特性を得られるよう前記発光ダイオードに直列あるいは並列に形成した抵抗器をレーザートリミングするので、発光ダイオード個々のバラツキによる輝度ムラの無い、また、実装上も工数と使用部品点数削減ができるチップ型発光ダイオードを提供できる。   As described in detail above, the present invention provides a laser having a resistor formed in series or in parallel with the light emitting diode so as to obtain a constant luminance characteristic regardless of the current and forward voltage, which are the electrical characteristics of each light emitting diode. Since trimming is performed, it is possible to provide a chip-type light emitting diode that is free from luminance unevenness due to variations in individual light emitting diodes, and that can reduce the number of man-hours and the number of components used in mounting.

また、発光ダイオード個々の電気的特性である電流や順方向電圧に関わりなく、前記本発明の電流制限抵抗付きチップ型発光ダイオード１００は多数個を並列接続しても各々の点灯輝度にバラツキが無く、電流調整抵抗付きチップ型発光ダイオード４００は多数個を直列接続しても各々の点灯輝度にバラツキが無いという特徴を有している。   In addition, regardless of the current and forward voltage that are the electrical characteristics of each light emitting diode, even if a plurality of the chip type light emitting diodes 100 with current limiting resistors of the present invention are connected in parallel, there is no variation in the lighting brightness. The chip-type light emitting diode 400 with current adjusting resistor has a feature that there is no variation in the lighting brightness even when a large number of chip light emitting diodes 400 are connected in series.

本発明の発光ダイオードの輝度調整装置のシステム図である。1 is a system diagram of a brightness adjusting device for a light emitting diode according to the present invention. 本発明の電流制限抵抗付きチップ型発光ダイオードの断面図である。It is sectional drawing of the chip type light emitting diode with a current limiting resistor of this invention. 図２に示した電流制限抵抗付きチップ型発光ダイオードの平面図である。FIG. 3 is a plan view of the chip-type light emitting diode with a current limiting resistor shown in FIG. 2. 本発明の発光ダイオードの輝度調整装置のシステム図である。1 is a system diagram of a brightness adjusting device for a light emitting diode according to the present invention. 図４に示した電流制限抵抗付きチップ型発光ダイオードの断面図である。It is sectional drawing of the chip type light emitting diode with a current limiting resistor shown in FIG. 従来例のチップ型発光ダイオードの断面図である。It is sectional drawing of the chip type light emitting diode of a prior art example. 従来のチップ型発光ダイオードの結線図である。It is a connection diagram of a conventional chip-type light emitting diode. 従来のチップ型発光ダイオードの断面図である。It is sectional drawing of the conventional chip type light emitting diode. 従来例の複数のチップ型発光ダイオードを定電圧電源で駆動した場合の結線図である。It is a connection diagram at the time of driving the several chip type light emitting diode of a prior art example with a constant voltage power supply. 従来例の複数のチップ型発光ダイオードを直列接続した場合の結線図である。It is a connection diagram at the time of connecting the some chip type light emitting diode of a prior art example in series. 従来例の複数のチップ型発光ダイオードを並列接続して定電流電源で駆動した場合の結線図である。It is a wiring diagram at the time of driving with a constant current power supply by connecting a plurality of conventional chip type light emitting diodes in parallel. 従来のチップ型発光ダイオードの順方向電圧選別回路である。It is a forward voltage selection circuit of a conventional chip type light emitting diode.

符号の説明Explanation of symbols

１００ 電流制限抵抗付きチップ型発光ダイオード、
１０１、６０１ 発光ダイオードチップ
１０２、４０２、７０２、７０２ａ、７０２ｂ、７０２ｃ 電流制限抵抗
１１０ 輝度調整装置
１１１ 受光装置
１１２ レーザー装置
１１３ レーザー照射光
１３９ 定電圧電源
２２２、５２２、６２２ チップ基板
４００ 電流調整抵抗付きチップ型発光ダイオード
４３９、８３９ａ、８３９ｂ、８３９ｃ 定電流電源
５３０、５３１ チップ基板５２２下面に形成した電極
６００、６０１ａ、６０１ｂ チップ型発光ダイオード
７３２ マザーボード
７３３、７３４、７４０ マザーボード配線
９０１ 電圧計
100 Chip type light emitting diode with current limiting resistor,
101, 601 Light emitting diode chip 102, 402, 702, 702a, 702b, 702c Current limiting resistor 110 Brightness adjusting device 111 Light receiving device 112 Laser device 113 Laser irradiation light 139 Constant voltage power supply 222, 522, 622 Chip substrate 400 With current adjusting resistor Chip type light emitting diodes 439, 839a, 839b, 839c Constant current power supply 530, 531 Electrodes 600, 601a, 601b formed on the lower surface of the chip substrate 522 Chip type light emitting diode 732 Motherboard 733, 734, 740 Motherboard wiring 901 Voltmeter

Claims (1)

基板上に発光ダイオードチップを搭載し、前記基板と同一面上に設けた配線のための２つ電極の間に前記発光ダイオードチップと直列又は並列に接続する電流制限抵抗を形成した発光ダイオードの製造方法において、前記電流制限抵抗を除いて前記発光ダイオードチップの上を透明もしくは半透明の樹脂でモールドし、前記電極と電極の間にカーボン印刷で樹脂モールドされていない前記電流制限抵抗を形成し、前記発光ダイオードチップと前記電流制限抵抗に定電流を印加して前記発光ダイオードチップの輝度を一定の値になるように前記電流制限抵抗をレーザートリミングで調整するものであって、前記レーザートリミングは、前記電流制限抵抗が初期抵抗値のときは定電圧電源の出力電圧を発光ダイオードチップの規定の電圧より低くして発光ダイオードチップへの過電流を押さえ、トリミングの最終段階で前記規定の電圧となるように前記定電圧電源の出力電圧を調節するようにしたことを特徴とする発光ダイオードの製造方法。
Manufacture of a light emitting diode in which a light emitting diode chip is mounted on a substrate and a current limiting resistor connected in series or in parallel with the light emitting diode chip is formed between two electrodes for wiring provided on the same surface as the substrate In the method, the light emitting diode chip is molded with a transparent or translucent resin except for the current limiting resistor, and the current limiting resistor that is not resin-molded by carbon printing is formed between the electrodes. Applying a constant current to the light emitting diode chip and the current limiting resistor to adjust the current limiting resistor by laser trimming so that the luminance of the light emitting diode chip becomes a constant value, the laser trimming, When the current limiting resistor has an initial resistance value, the output voltage of the constant voltage power supply is lower than the specified voltage of the light emitting diode chip. Emitting diode pressing the overcurrent to the chip, the manufacturing method of light-emitting diodes, characterized in that so as to adjust the output voltage of the constant voltage power source so that the voltage of the prescribed in the final stage of trimming Te.
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