JP4733434B2 - Chip type LED - Google Patents

Chip type LED Download PDF

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Publication number
JP4733434B2
JP4733434B2 JP2005164899A JP2005164899A JP4733434B2 JP 4733434 B2 JP4733434 B2 JP 4733434B2 JP 2005164899 A JP2005164899 A JP 2005164899A JP 2005164899 A JP2005164899 A JP 2005164899A JP 4733434 B2 JP4733434 B2 JP 4733434B2
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Japan
Prior art keywords
led
voltage
paste
electrode
chip
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Expired - Fee Related
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JP2005164899A
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Japanese (ja)
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JP2006339541A (en
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孝一 深澤
悟 菊池
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シチズン電子株式会社
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member

Description

  The present invention relates to a light emitting diode, that is, an LED (Light Emitting Diode), and is a small chip type light emitting diode (hereinafter referred to as a light emitting diode) used for general illumination, flash illumination of a camera mounted on a mobile phone, or illumination of an operation key of a mobile phone or portable device. This relates to the structure of a chip-type LED).

  Many LEDs are manufactured in wafers at the same time in the same way as integrated circuits. Bare chips that are individually scribed, that is, LED elements are often sealed and used in a small package that is easy to handle. One is a chip-type LED, and the chip-type LED has the LED element mounted on a small substrate, and electrode bonding is performed between the anode or cathode electrode of the LED element and the electrode of the small substrate by wire bonding. The resin mold was formed later. Alternatively, when the LED is further finely mounted, an LED element may be directly mounted on a printed board or the like, and electrode molding may be performed on the printed board by wire bonding, followed by resin molding.

  LEDs are excellent in light emission power efficiency and are used not only for signal display but also in recent years as illumination devices using high-brightness LEDs. However, although it is a high-intensity LED, there is a shortage of light amount depending on the purpose of use, and a plurality of LED elements are connected in series or in parallel to increase the light amount. In particular, for general illumination or flash illumination requiring high power, four or more elements are often sealed in the same package.

  The LED applies a positive voltage to the anode and a negative voltage to the cathode, and current starts to flow at a voltage of about 2 V, and emits light. However, it has an exponential voltage-current characteristic, and when driven in parallel, each forward voltage (Vf ) A current depending on the value flows. Accordingly, since the forward current value (If) flowing in each LED also varies due to variations in the forward voltage value Vf of the plurality of LEDs in the same package, an external resistor is connected in series to each LED element, It is necessary to suppress variations in the forward current value If. Further, when LED elements such as red (R), green (G), and yellow (Y) having different emission colors are sealed in the same package, each LED element has a different forward voltage value Vf. On the other hand, it is indispensable to add series resistance for rectification, that is, current limitation.

  The parallel connection of LED elements in the prior art will be described below with reference to the drawings. FIG. 6 a is a cross-sectional structural view of a general PN junction LED element, and reference numeral 601 denotes an LED element having a P layer on the upper surface. Reference numeral 603 denotes an anode electrode formed on the upper surface of the P layer, and reference numeral 604 denotes a cathode electrode formed on the lower surface of the N layer. Although not shown, the lower surface of the N layer, that is, the cathode is conductively bonded to the substrate electrode on which the LED is mounted. The anode electrode 603 is pulled out by wire bonding. FIG. 6B is an equivalent circuit diagram of the LED 601 shown in FIG. 6A. The LED 601 is turned on by applying a forward voltage, that is, a positive voltage to the anode electrode 603 and a negative voltage to the cathode electrode 604.

  FIG. 7 is a voltage / current characteristic diagram of a general LED, and examples of voltage / current characteristics of red (R) green (G) yellow (Y) LED elements having different emission colors are indicated by symbols R, G, and Y. Each LED exhibits a steep rise characteristic from around 2 V, but has different voltage-current characteristics.

  Furthermore, even for LEDs of the same color tone, there is a slight difference in voltage-current characteristics for each LED element, and since the voltage-current characteristics of LEDs are steep rise characteristics, even slight differences in characteristics When LED elements are connected in parallel, current imbalance occurs. Therefore, in the prior art, the current balance of LEDs connected in parallel has been realized by the method described below.

  That is, FIG. 8a is a parallel connection circuit diagram of LED elements of the prior art, and is a method of adding a resistance corresponding to each LED element of the same package. The current limiting resistors R1, R2, R3, and Rn are respectively connected in series to the LED elements indicated by the symbols D1, D2, D3, and Dn. Alternatively, since the packages on which the LED elements D1, D2, D3, and Dn are mounted are formed in a small size, the current limiting resistors R1, R2, R3, and Rn are provided on a printed circuit board outside the package of the LED elements D1, D2, D3, and Dn. In some cases, a printed resistor is formed on the printed circuit board as a current limiting resistor.

  FIG. 8b is another parallel connection circuit diagram of the LED element of the prior art, and is a method for strictly aligning the voltage-current characteristics of the LED elements in the same package. Each of the LED elements indicated by reference signs D1, D2, D3, and Dn previously flows a certain forward current If suitable for lighting, and measures and classifies the forward voltage value Vf at this time. The classification width of the value Vf is subdivided, and the same classified LEDs are mounted in the same package and connected in parallel. Therefore, in this case, since the forward voltage characteristics of the LED elements are uniform, the current limiting resistor may be a single current limiting resistor indicated by the symbol R, so that the mounting area of the current limiting resistor can be reduced.

JP 2002-344023 A JP 2004-179372 A

  However, in the method of connecting a plurality of LED elements in the prior art described in FIG. 8a in parallel, it is necessary to add a current limiting resistor corresponding to each of the LED elements D1, D2, D3, and Dn. This increases the area and cost. Further, when the current limiting resistors R1, R2, R3, Rn are mounted on a printed circuit board or the like outside the package of the LED elements D1, D2, D3, Dn, the LED elements D1, D2, D3, It is necessary to draw the cathode terminal wiring to the outside for each Dn, resulting in an increase in package shape and cost.

  In the method of connecting a plurality of LED elements in parallel in the prior art described with reference to FIG. 8b, the forward voltage / current characteristic classification width of the LED elements D1, D2, D3, and Dn sealed in the same package is reduced. There was a problem that it was forced to subdivide, resulting in an increase in process and cost.

(Object of invention)
That is, the object of the present invention is to provide a chip type LED in which a plurality of LED elements D1, D2, D3, Dn having the same forward voltage Vf in the same package described in FIG. The classification accuracy of the forward voltage current characteristics of the LED elements D1, D2, D3, Dn is eased, and even if the plurality of LED elements are connected in parallel in the same package, a current imbalance between the LED elements is generated. There is no chip-type LED.

In order to achieve the above object, the present invention provides a chip-type LED in which a plurality of LED elements having different emission colors are connected in parallel and mounted on the same small substrate. The common electrode of the small substrate that connects the lower surface electrode with a die bond paste material is an electrode pattern that is separated for each LED element and commonly connected at the end of the small substrate other than the surface on which each LED element is mounted. The carbon black is mixed with a normal conductive paste at a certain ratio for electrical connection between each lower surface electrode of the plurality of LED elements and the common electrode of the small substrate, and the resistance value is different for each LED element of each color tone. and was using the die bonding paste material to mount the LED element on the common electrode of the small board, the small board and each upper electrode of the plurality of LED elements And characterized in that use wire Bonn dengue in connections between the common electrode.

That is, the die bond paste material having the resistance component has a series current resistance component for each of the plurality of LED elements having different emission colors , so that the voltage-current characteristic gradient of the plurality of LED elements is increased. Even if the plurality of LED elements are connected in parallel, the current imbalance among the LED elements is reduced. Further, by separating the electrode surfaces on which the LED elements are mounted, it is possible to prevent the lower electrodes of the adjacent LED elements from being short-circuited due to the overhang of the die bond paste material.

The die bond paste material having a different resistance value for each color tone LED element uses a different type of die bond paste material for each color tone LED element.

Namely, in the pre-Symbol die bonding paste material in which a different resistance value for each LDE element of each color, the forward voltage of the different LED elements for each color by using LED elements of different types die bonding paste material for each of the color A series resistance value corresponding to is provided to reduce current imbalance between the LED elements.

The die bond paste material having a different resistance value for each color tone LED element has a different printing range or layer thickness of the die bond paste material for each color tone LED element.

Namely, in the pre-Symbol die bonding paste material in which a different resistance value for each LDE element of each color, the print area of the die bonding paste material varied or different to the thickness at each respective tone for each LED element of each color A series resistance value corresponding to the forward voltage of different LED elements is provided to reduce current imbalance between the LED elements.

  As described above, according to the present invention, a plurality of LED bond elements having a resistance component can be mounted in parallel by using a die bond paste material having a resistance component on the same small substrate. In order to form each series resistance component for each LED element, the gradient of the voltage-current characteristics of the plurality of LED elements is individually relaxed, and current imbalance among the plurality of LED elements is reduced. Further, it becomes easy to produce a strong light emitting chip type LED in which a plurality of LED elements are connected in parallel or a parallel mixed chip type LED of LED elements having different emission colors.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1a shows a plan view of a chip-type LED in an embodiment of the present invention. FIG. 1b is a side view of the chip-type LED in the embodiment of the present invention. FIG. 2 is an assembled perspective view of the chip type LED in the embodiment of the present invention.

  In FIG. 1a, FIG. 1b, and FIG. 2, 100 is a chip-type LED on which one LED element is mounted, and shows the basic structure of the present invention. 101 is an LED element, 102 is a small substrate, 103 is an anode electrode formed on the small substrate 102, 104 is a cathode electrode formed on the small substrate 102, 105 is formed on the anode of the LED element 101 and the small substrate 102 A bonding wire 106 for connecting the anode electrode 103 is a die bond paste material having a resistance component for connecting the cathode on the lower surface of the LED element 101 and the cathode electrode 104 formed on the small substrate 102, A conductive adhesive layer 107 having a resistance component for fixing and mounting the LED element 101 on the side, 107 protects the LED element 101 and the bonding wire 105 mounted on the small substrate 102, and does not prevent light emission of the LED element 101. Smoke or clear resin. In FIG. 2, the clear resin 107 is omitted.

  That is, the present invention is characterized in that the die bond paste material 106 which is an adhesive layer for fixing and mounting the LED element 101 on the small substrate 102 in FIGS. 1a, 1b and 2 has a resistance component. Therefore, in the present invention, the die bond paste material 106 is characterized by actively using the resistance component of the die bond paste material by mixing a material having high resistance, for example, carbon black or the like in a normal conductive paste at a certain ratio. It is said.

  FIG. 3 is a voltage-current characteristic diagram of the chip-type LED in the embodiment of the present invention, where the X-axis shows the applied voltage to the LED and the Y-axis shows the LED current. Here, 301 indicates the voltage-current characteristic of the conventional LED, and the current change in the applied voltage range 303 is steep and greatly changed as indicated by 304. Reference numeral 302 denotes voltage-current characteristics of the chip type LED of the present invention. As shown by reference numeral 305, current gradient in the applied voltage range 303 is greatly reduced compared to the voltage-current characteristics of the conventional LED. The

  The reason for this is that the conventional LED has a very low resistance of the die bond paste material in the chip, and the voltage-current characteristics of the LED in the light emitting region are steep, so that the operating resistance value in the light emitting region is extremely small. To do. In the present invention, since a resistance component by a die bond paste material is added to the conventional LED, the operating resistance value in the light emitting region is approximately the resistance value added by the die bond paste material. Since the die bond paste material in the present invention is mixed with carbon black or the like in a normal conductive paste at a certain ratio, the resistance value that can be added is as low as several tens of ohms. The operating resistance value in the light emitting region of the type LED is a sufficiently large value. Therefore, even if the forward voltage / current characteristic classification of the LED elements when sealing a plurality of LED elements in the same package as described above is roughened, the current imbalance between the LED elements connected in parallel is reduced.

  FIG. 4 is a perspective view of a chip-type LED in which the embodiment of the present invention shown and described in FIGS. 1a, 1b and 2 is applied to a parallel connection of a plurality of LED elements, and 400 is equipped with three LED elements. It is a chip-type LED. Reference numerals 401a, 401b, and 401c denote LED elements, and reference numeral 402 denotes a small substrate on which the LED elements 401a, 401b, and 401c are mounted. Reference numeral 403 denotes an anode electrode formed on the small substrate 402, and 404 denotes a cathode electrode formed on the small substrate 402. Reference numerals 406a, 406b, and 406c denote die bond paste materials having a resistance component for fixing and mounting the cathode surfaces of the lower surfaces of the LED elements 401a, 401b, and 401c on the cathode electrode 404.

  That is, the cathode electrode 404 is separated from the electrode portion for fixing and mounting the cathode surfaces of the LED elements 401a, 401b, and 401c, but at the end of the small substrate 402 other than the surface for mounting the LED elements. The pattern of the electrode 404 is commonly connected, and the cathode surfaces of the LED elements 401a, 401b, and 401c are fixedly mounted with a die bond paste material having a resistance component, whereby the cathodes of the LED elements 401a, 401b, and 401c. The resistance component of the die bond paste material is inserted and added to each side independently. On the other hand, the anode electrode 403 is common, and the anode on the upper surface of each LED element 401a, 401b, 401c and the anode electrode 403 are electrically connected by a bonding wire.

  Here, the electrode portions for fixing and mounting the cathode surfaces of the LED elements 401a, 401b, and 401c of the cathode electrode 404 are separated because the bottom electrodes of the adjacent LED elements are short-circuited due to the overhang of the die bond paste material. Is to prevent. If the lower surfaces of adjacent LED elements are short-circuited at the end of the die bond paste material, the cathodes of the adjacent LED elements are connected to each other, and the resistance component of the die bond paste material is independently connected to the cathode side of each LED element. The function of inserting and adding is lost.

  FIG. 5 is an equivalent circuit diagram of a chip-type LED in which a plurality of LED elements according to the present invention shown and described in FIG. 4 are mounted with a die bond paste material having a resistance component on the cathode side. Here, there are n LED elements. It is. R1, r2, r3, and rn connected in series on the cathode side of each LED element indicated by reference signs D1, D2, D3, and Dn are resistances of a die bond paste material having a resistance component.

  That is, series resistors r1, r2, r3, and rn inserted on the cathode sides of the LED elements D1, D2, D3, and Dn are added to the operating resistance value of the raw LED, and each of the LED elements D1, D2, D3, and Dn is added. Since the voltage-current characteristic gradient is alleviated, current imbalance between the LED elements connected in parallel is reduced. That is, even if the forward voltage / current characteristic classification of the LED elements connected in parallel is rough, parallel connection is easy, so that the yield of LED element selection is high and there is an effect of cost reduction.

  Further, when LED elements having different forward voltage current characteristics, for example, red (R) green (G) yellow (Y) LED elements having different emission colors are connected in parallel, a die bond having a specific resistance corresponding to each voltage / current characteristic. LED elements having different color tones can be connected in parallel by mounting using a paste material. That is, the die bond paste material is generally applied to the electrode on which the LED element is mounted by a dispenser, but the dispenser for each die bond paste material corresponding to the voltage-current characteristics of the LED element is properly used. In addition, when printing the same die bond paste material on the mount electrodes of LED elements with different forward voltage and current characteristics, each LED element can be mounted by changing the printing range of the die bond paste material according to the voltage and current characteristics of the LED elements. If the spread of the die bond paste material is constant by changing the amount of paste to be applied, the thickness of the die bond paste material is different, and the junction resistance according to the voltage-current characteristics of each LED element can be obtained.

  As described above, the present invention has been described based on the LED element having the P layer on the upper surface and the N layer on the lower surface. However, even if the N layer is the upper LED and the P layer is the lower LED element, the anode and cathode of the LED element are simply switched. Yes, the anode side is mounted on the anode electrode with a die bond paste material having a resistance component, and the cathode side is pulled out to the cathode electrode by wire bonding. Therefore, in this case, resistance components are individually inserted on the anode side of the LED elements.

FIG. 1a is a plan view of a chip-type LED according to an embodiment of the present invention. FIG. 1b is a side view of the chip-type LED in the embodiment of the present invention. FIG. 2 is an assembled perspective view of the chip-type LED in the embodiment. FIG. 3 is a voltage-current characteristic diagram of the chip type LED in the embodiment of the present invention. FIG. 4 is a perspective view of a chip type LED mounted with a plurality of LED elements of the present invention. FIG. 5 is an equivalent circuit diagram of a chip type LED mounted with a plurality of LED elements of the present invention. FIG. 6A is a cross-sectional structure diagram of a general PN junction LED element. FIG. 6b is an equivalent circuit diagram of the LED 600 shown in FIG. 6a. FIG. 7 is a voltage-current characteristic diagram of a general LED. FIG. 8a is a circuit diagram of parallel connection of LED elements of the prior art. FIG. 8b is another parallel connection circuit diagram of the LED element of the prior art.

Explanation of symbols

100, 400 chip type LED
101, 401a, 401b, 401c, 601, D1, D2, D3, Dn LED element 102, 402 Small substrate 103, 403, 603 Anode electrode 104, 404, 604 Cathode electrode 105 Bonding wire 106, 406a, 406b, 406c Die bond paste Material 107 Clear Resin

Claims (3)

  1. In a chip-type LED in which a plurality of LED elements having different emission colors are connected in parallel and mounted on the same small substrate , the small substrate in which the plurality of LED elements are mounted and each lower surface electrode is connected by a die bond paste material The common electrode is an electrode pattern that is separated for each LED element and is commonly connected at the end of the small substrate other than the surface on which each LED element is mounted. For the electrical connection between the common electrodes of the small substrate , carbon paste is mixed with a normal conductive paste at a certain ratio and a die bond paste material having a different resistance value for each color LED element is used. The LED element is mounted on the common electrode, and a wire bonder is used for connection between each upper surface electrode of the plurality of LED elements and the other common electrode of the small substrate. Chip-type LED, characterized in that was used immediately.
  2. The die bonding paste material in which a different resistance value for each LED element of each color tone, claim 1 Symbol placement of the chip-type LED is characterized by using a die bonding paste material different types for each LED element of each color.
  3. The die bonding paste material in which a different resistance value for each LED element of each color, the chip type according to claim 1 Symbol placement print area or thickness of the die bonding paste material for each LED element of each color are different from each other LED.
JP2005164899A 2005-06-03 2005-06-03 Chip type LED Expired - Fee Related JP4733434B2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107924962A (en) * 2015-08-12 2018-04-17 Lg伊诺特有限公司 Light-emitting component and the display device with the light-emitting component

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USRE46953E1 (en) 2007-04-20 2018-07-17 University Of Maryland, Baltimore Single-arc dose painting for precision radiation therapy
JP2009099715A (en) * 2007-10-16 2009-05-07 Fujikura Ltd Light emitting device
JP2009283776A (en) * 2008-05-23 2009-12-03 Stanley Electric Co Ltd Semiconductor device, semiconductor device module and method for manufacturing semiconductor device module
JP5681407B2 (en) * 2010-07-26 2015-03-11 株式会社小糸製作所 Light emitting module
JP5992164B2 (en) * 2011-12-14 2016-09-14 イビデン株式会社 Electronic component mounting substrate, light emitting device, and display device
KR20180071743A (en) * 2016-12-20 2018-06-28 엘지디스플레이 주식회사 Light emitting diode chip and light emitting diode display apparatus comprising the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0561420A (en) * 1991-06-29 1993-03-12 Kyocera Corp Image forming device
JPH11162233A (en) * 1997-11-25 1999-06-18 Matsushita Electric Works Ltd Light source device
JP2005019838A (en) * 2003-06-27 2005-01-20 Nippon Leiz Co Ltd Light source device and method for manufacturing the same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0561420A (en) * 1991-06-29 1993-03-12 Kyocera Corp Image forming device
JPH11162233A (en) * 1997-11-25 1999-06-18 Matsushita Electric Works Ltd Light source device
JP2005019838A (en) * 2003-06-27 2005-01-20 Nippon Leiz Co Ltd Light source device and method for manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107924962A (en) * 2015-08-12 2018-04-17 Lg伊诺特有限公司 Light-emitting component and the display device with the light-emitting component
US10325887B2 (en) 2015-08-12 2019-06-18 Lg Innotek Co., Ltd. Light emitting device and display device having same

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