JP4860143B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP4860143B2 JP4860143B2 JP2004356965A JP2004356965A JP4860143B2 JP 4860143 B2 JP4860143 B2 JP 4860143B2 JP 2004356965 A JP2004356965 A JP 2004356965A JP 2004356965 A JP2004356965 A JP 2004356965A JP 4860143 B2 JP4860143 B2 JP 4860143B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- line
- electrode
- reverse voltage
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010410 layer Substances 0.000 description 52
- 238000000034 method Methods 0.000 description 34
- 239000010408 film Substances 0.000 description 16
- 230000006866 deterioration Effects 0.000 description 14
- 239000000758 substrate Substances 0.000 description 12
- 239000003990 capacitor Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 230000000750 progressive effect Effects 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004356965A JP4860143B2 (ja) | 2003-12-19 | 2004-12-09 | 表示装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003423891 | 2003-12-19 | ||
| JP2003423891 | 2003-12-19 | ||
| JP2004356965A JP4860143B2 (ja) | 2003-12-19 | 2004-12-09 | 表示装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005202372A JP2005202372A (ja) | 2005-07-28 |
| JP2005202372A5 JP2005202372A5 (enExample) | 2008-01-24 |
| JP4860143B2 true JP4860143B2 (ja) | 2012-01-25 |
Family
ID=34829381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004356965A Expired - Fee Related JP4860143B2 (ja) | 2003-12-19 | 2004-12-09 | 表示装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4860143B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2004086344A1 (ja) | 2003-03-26 | 2004-10-07 | Semiconductor Energy Laboratory Co. Ltd. | 表示装置及びその駆動方法 |
| TWI603307B (zh) * | 2006-04-05 | 2017-10-21 | 半導體能源研究所股份有限公司 | 半導體裝置,顯示裝置,和電子裝置 |
| JP2008311118A (ja) * | 2007-06-15 | 2008-12-25 | Aitesu:Kk | 有機el素子の駆動装置および駆動方法 |
| US8269212B2 (en) * | 2009-04-29 | 2012-09-18 | Honeywell International Inc. | OLED display with a common anode and method for forming the same |
| JP6281134B2 (ja) * | 2013-01-07 | 2018-02-21 | 株式会社Joled | 表示装置、駆動装置、駆動方法、および電子機器 |
| JP2014137398A (ja) * | 2013-01-15 | 2014-07-28 | Sony Corp | 表示装置、表示駆動装置、駆動方法、および電子機器 |
| KR20230164225A (ko) * | 2018-02-01 | 2023-12-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4067875B2 (ja) * | 2001-06-01 | 2008-03-26 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型発光装置の修理方法及び作製方法 |
| JP3810724B2 (ja) * | 2001-09-17 | 2006-08-16 | 株式会社半導体エネルギー研究所 | 発光装置及び電子機器 |
| JP2003208127A (ja) * | 2001-11-09 | 2003-07-25 | Sanyo Electric Co Ltd | 表示装置 |
| JP2003150110A (ja) * | 2001-11-14 | 2003-05-23 | Matsushita Electric Ind Co Ltd | 有機el素子を用いたアクティブマトリクス型表示装置及びその駆動方法と携帯情報端末 |
| JP2003280576A (ja) * | 2002-03-26 | 2003-10-02 | Sanyo Electric Co Ltd | アクティブマトリクス型有機el表示装置 |
| WO2004086344A1 (ja) * | 2003-03-26 | 2004-10-07 | Semiconductor Energy Laboratory Co. Ltd. | 表示装置及びその駆動方法 |
| JP4641710B2 (ja) * | 2003-06-18 | 2011-03-02 | 株式会社半導体エネルギー研究所 | 表示装置 |
-
2004
- 2004-12-09 JP JP2004356965A patent/JP4860143B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2005202372A (ja) | 2005-07-28 |
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