JP4844999B2 - Multilayer circuit material - Google Patents

Description

  The present invention relates to a material for forming a circuit that transmits an electric signal having a high frequency of 5 GHz or more.

Conventionally, Patent Document 1 proposes a signal transmission line that reduces radiation and reflection and reduces transmission loss in a signal transmission line that transmits a high-frequency electrical signal. In this signal transmission line, as shown in FIG. 5, a metal thin film ground layer 4 is provided on a Si substrate 1, and an insulating film 2 such as silicon nitride (SiN) or silicon oxide (SiO ₂ ) is formed thereon, and gold (Au). Alternatively, a highly conductive metal thin film line 3 such as aluminum (Al) is provided.

Further, Patent Document 2 proposes a Cu wiring structure using higher conductivity copper (Cu) in a metal thin film line. FIG. 6 shows a cross-sectional structure of this Cu wiring structure. A base metal layer 5 such as tungsten (W) or titanium nitride (TiN) is provided on a Si substrate 1, and silicon nitride ( In this structure, a Cu wiring layer 6 and an insulating film 2 made of silicon oxide (SiO 2) are provided with a Si diffusion preventing insulating film 7 made of SiN.
On the printed wiring board, a copper foil having a small surface roughness is pasted and then patterned by etching, or a pattern is formed by lithograph and then a circuit is formed by plating.

JP-A-5-37207 JP 11-40566 A

The signal transmission line on the substrate is configured as shown in FIGS.
However, when the substrate is made of a semiconductor material, the resistance value of the substrate is low, there is a leak, and the line impedance cannot be as designed, so that an ultra-high frequency signal of several GHz or higher, or several Gbit / second or higher. However, there are many problems such as radiation and reflection from the signal transmission line, and extremely large transmission loss. In addition, when a plurality of signal transmission lines are formed on the same substrate, there is a problem that the isolation between the signal transmission lines also deteriorates.

  Furthermore, since an electric signal having a high frequency of 5 GHz or more flows only on the surface layer of the circuit due to the skin effect, the characteristic impedance increases, which may cause various problems such as signal delay, power loss, and heat generation. In order to prevent this, it is effective to increase the surface area of the circuit, but there is a big problem in the design of a transmission circuit such as a mobile device that is required to be downsized.

  Therefore, the present invention has been made to solve the above problems, and since the characteristic impedance can be reduced, the circuit material has low reflection and radiation and low loss even during transmission of an ultrahigh frequency or ultrahigh speed signal. The purpose is to provide.

The invention according to claim 1 is more stable than a conductor layer in which an atomic layer made of a single element is composed of a single layer or a plurality of layers less than 10 atomic layers, and an interatomic bond between elements constituting the conductor layer. the atomic layer consisting of a single or a plurality of elements forms a bond consists of a constraining layer and the substrate consist of multiple layers of less than a monolayer or 10 atomic layers, forming a constraining layer on a substrate, a conductor layer is formed thereon and a laminated structure formed of the constraining layer, a laminated structure of laminating between atoms of the constraining layer and the conductive layer by atomic alignment state, misfit strain at an interface of the constraining layer and the conductive layer 9 The laminated circuit material is characterized in that the conductor layer and the constraining layer are laminated on a substrate so as to be 0.0% or less . The stability of the interatomic bond of the laminated circuit material shown here corresponds to the magnitude of the interatomic interaction energy and the potential energy between atoms, and the smaller the value is, the closer to the stable state.

The invention according to claim 2 is a circuit material in which a constraining layer and a conductor layer are laminated on a substrate in a laminated structure having a structure in which the constraining layer and the conductor layer are laminated so that the constraining layer is the outermost layer. The laminated circuit material according to claim 1 , wherein the conductor layer and the conductor layer are laminated in an atomically aligned state.

According to a third aspect of the present invention, in the circuit material comprising the conductor layer and the constraining layer, the structure is a three-layer structure of constraining layer / conductor layer / constraining layer, or further a conductor layer / constraining layer on the surface of the constraining layer. A circuit material obtained by laminating a laminated structure consisting of a two-layer structure of 1 to 2 times on a substrate, wherein the constraining layer and the conductor layer and the conductor layer and the constraining layer are laminated in an atomically aligned state. and a laminated circuit material of claim 1 and claim 2, characterized in that are.

According to a fourth aspect of the present invention, the conductor layer is composed of any element of Cu, Au, Ag, and Al, and the constraining layer has a single or plural lattice constants that are close to the lattice constant of the conductor layer. The layered circuit material according to any one of claims 1 to 3 , wherein the layered circuit material is a layer having a crystal structure made of any of the above elements.

The invention of claim 5 is a laminated circuit material of claim 1 to claim 3 wherein the conductive layer is characterized in that the face-centered structure is a crystal structure having a basic structure.

The invention according to claim 6 is characterized in that the constraining layer includes at least one compound layer selected from Cu3Pd, CuPt, CuAu, PtV3, Ag3In, Al3Zr, and AuV3 composed of a monoatomic layer or a plurality of atomic layers. a laminated circuit material of claim 1 to claim 5, which contain an element forming a more stable bond than interatomic bonds between the elements between the above compounds constituting the both conductive layers. The atomic weight of the constituent elements of the constrained layer is more desirably as large as possible in the atomic number obtained by averaging the elements composing the constrained layer in order to effectively suppress the electron scattering effect.

Invention according to claim 7, wherein the surface orientation of both the constraining layer and the surface layer (100) orientation or (111) according to claim 1 to claim 6, wherein characterized in that it has either orientation azimuth It is a laminated circuit material.

According to the present invention, the metal layer, which is a conductor layer forming the electric transmission circuit, is thinned, and the compound layer having a strong binding force with the metal layer and a large effect of suppressing the lattice vibration of the metal layer is formed on the upper and lower surfaces of the metal layer. By forming, the phonon intensity transmitted in the thickness direction of the thin film is reduced, and inelastic scattering of phonons propagating in the plane direction of the thin film is suppressed. By suppressing the inelastic scattering of electrons by the phonons, the resistance value in the surface direction of the metal layer is reduced, the sheet resistance can be reduced, and malfunction due to signal delay and power loss can be efficiently prevented.

  Regularly laminating a metal layer that is a conductor layer and a compound layer that is a constraining layer that suppresses the lattice vibration suppresses inelastic scattering of conductive electrons due to phonons transmitted in the thickness direction of the metal layer. Show high electron mobility. Therefore, higher electrical conductivity can be obtained and the sheet resistance can be reduced.

Note that when high electrical conductivity, that is, low DC resistance of the conductor is obtained, the sheet resistance is reduced when the frequency ω, the permeability of the conductor μ, and the DC resistance of the conductor ρ are the sheet resistance Rs in the AC circuit. Is because Rs = (ωμρ / 2) ^1/2 . Since Rs has a relationship proportional to a conductor loss coefficient related to power loss in an AC circuit and a delay time related to signal delay, if the DC resistance ρ of the conductor is reduced, power loss and signal delay are less likely to occur. In addition, since the sheet resistance Rs in the AC circuit is a value obtained by multiplying the DC resistance ρ to the 1/2 power by a constant obtained from the frequency ω, the magnetic permeability μ of the conductor, etc., the AC resistance can be measured by measuring the DC resistance ρ. The sheet resistance Rs in the circuit can be evaluated.

The compound layer is used as the constraining layer in order to suppress phonon scattering in the conductor layer. However, since the electron mobility in the compound layer is low and electricity flows centrally in the highly conductive metal layer, the constraining layer is used. The effect on the electrical resistance of the layer will be relatively small. Usually, a compound layer is used as a constraining layer, but a metal layer can also be used as a constraining layer. When a metal layer is used as the constraining layer, the electron mobility in the constraining layer is higher than when a compound layer is used as the constraining layer, but the effect of suppressing phonon scattering is often small.
The total number of constraining layers does not affect the specific resistance value of the conductor layer itself. However, as the ratio of the constraining layer to the metal layer increases, the specific resistance value per thin film increases. It is desirable to increase the atomic layer ratio, but if the conductor layer ratio becomes too high, the constraining layer phonon scattering suppression effect is insufficient and the specific resistance value increases. It is necessary to design appropriately. When the constraining layer is not provided, electrons in the conductor layer are subjected to phonon scattering and have a high resistance value.

  The multi-layer structure of the conductor layer and compound layer is that when a high-frequency current is passed, the current concentration is concentrated on the conductor surface due to the skin effect, and the depth of the flowing current changes. However, when the thickness is greater than the thickness of the conductor layer, current flows through the multilayer conductor layers, so that signals are coupled between the conductor metal layers, and the phase difference is eliminated. If there is a phase difference between the conductor layers, the rise of the signal becomes broad and clock synchronization becomes difficult.

As the constraining layer, it is necessary to form a more stable bond than the elements constituting the conductor layer. Therefore, the combination of elements constituting the constraining layer differs depending on the type of element constituting the conductor layer. For example, when the conductor layer is Cu, the constraining layer compound may be Cu3Pd, CuPt, CuAu, PtV3, etc., and the single element used in the constraining layer may be Au, Pt, Ru, W, Zr, or the like. It is done. Both can be used for the constraining layer, and the larger the atomic number of the elements constituting the constraining layer, the more the action of suppressing the electron scattering effect is greater, and thus the more preferable.
It is desirable near the interatomic distance of a single atomic layer or compound layer conductive layer in interatomic spacing of laminating each used as a constraint layer, depending on the type of the conductor layer, necessary Ru Oh prescribed. When the difference between the distances between the adjacent atoms of the conductor layer and the constraining layer widens, the metal layer of the conductor layer does not form in alignment with the constraining layer, or dislocation occurs in the metal layer of the conductor layer, causing inelastic scattering of phonons. This is to make it easier. In other words, the constraining layer needs to satisfy the two requirements that the constraining layer has a more stable bond than the conductor layer and that the atomic spacing between the conductor layer and the constraining layer is small and the misfit strain between the two is small. .

  The generation direction of the metal thin film as the conductor layer is preferably the (111) plane or the (100) plane. The reason why the generation direction is defined as the (111) plane or the (100) plane is described below. When the surface orientation of the metal thin film is the (111) plane, the vertical direction of the film is the direction with the most interatomic distance, so the direction parallel to the film has a great shielding effect from ion nuclei and causes scattering. This is because it is easy to transmit electricity most easily. On the other hand, in the case of the (100) plane, the atomic vibration mode in the film thickness direction has a large component that is perpendicular to the film thickness. This is because the influence of scattering can be reduced. Furthermore, in the present invention, the conductor layer is laminated on the constraining layer as a single crystal of a predetermined orientation, so that it is not easily affected by phonon scattering due to crystal grain boundaries, and is also subject to direct scattering due to free electron grain boundaries. This is also advantageous in this respect.

  The compound layer as the constraining layer does not necessarily include the same element as the metal layer as the conductor layer. However, when the compound layer includes the same element as the metal layer as the conductor layer, the metal layer is uniformly formed on the compound layer. Is preferable because it is easy to generate. When the compound layer and the metal layer as the conductor layer contain the same element, the metal layer is generated with the atomic position as the nucleus, so the thin film is not formed in an island shape and is difficult to form. A circuit with less elastic scattering can be formed.

FIG. 1 is a specific example showing an atomic arrangement of a crystal structure of a compound layer having a face-centered structure. The crystal structure of the compound layer as the constraining layer is preferably a crystal structure having a face-centered structure. Typical examples of the face-centered structure include structures such as L1 ₂ , L1 ₁ , L1 _{0, and the} like. In order, FIG. 1 (a), FIG. 1 (b), and FIG. 1 (c) show.
1 (a) is, _Cu 3 Pd compound having an L1 ₂ structure, a case of a CuAu compound. For example, when the conductor layer is Cu, a Cu ₃ Pd compound is desirable, and when the conductor layer is Al, an Al ₃ Zr compound is desirable. In this case, the lattice constant of the Cu ₃ Pd compound is 0.3676 nm, and the lattice constant of the Cu conductor layer laminated thereon is 0.3615 nm. The lattice constant of the Al ₃ Zr compound is 0.4093 nm, and the lattice constant of the Al conductor layer is 0.405 nm. Representative examples of L1 ₀ structure, CuAu, there is CuPt, its lattice constant, 0.3972nm, a 0.3777Nm, shows a value close to Cu conductor layer. Furthermore, it can be used suitably also compounds of L1 ₁ structure having a face-centered structure, also in this case, from the relationship between the lattice constant of the conductive layer and the compound layer, misfit strain measurement and the conductor layer and the constraining layer The candidate is selected in consideration of the stability of the combined state.

Table 1 shows the relationship between the crystal structure of the constraining layer including other examples in addition to the compound layer and the misfit strain of the conductor layer combined therewith. The combination of misfit strains shown in Table 1 is expected to be a candidate for serving as a constraining layer. In order to apply these constraining layers to a thin film laminate in combination with a conductor layer, the constrained layer needs to be more stable than the conductor layer. For example, when Cu is used as a conductor layer and CuAu is used as a constrained layer, when the interatomic potential is obtained at a lattice constant of 0.38 nm, the interatomic potential between Cu and Au is −m with 0.0mRy between Cu. Since it shows a low value of 32.5 mRy, the bonding state between atoms between Cu and Au is in a more stable state than that between Cu.
When the conductor layer is made of Cu, the bonding state of other compounds such as Cu ₃ Pd, CuPt, PtV ₃ and single element compounds of Au, Pt, Ru, W, Zr may be more stable than the case of Cu. It can be confirmed by simple calculation.

  The present invention relates to a laminated circuit material in which a constraining layer and a conductor layer are laminated on a substrate. In the examples described later, the Si substrate is used. However, the substrate used in the invention depends on the use of the laminated circuit material. In addition to the Si substrate, an oxide substrate, a resin substrate, a compound semiconductor, or the like can be used as the substrate.

Example 1
By molecular beam epitaxy, a Cu ₃ Pt compound as a constrained layer is formed on a Si single crystal substrate having a surface orientation (100) with a combination of the conductor layer and constrained layer shown in Table 2, and a conductor layer is formed thereon. Cu was produced for two atomic layers, three atomic layers, four atomic layers, and ten atomic layers. The surface orientation of these Cu layers is (100). On these Cu layers, a Cu ₃ Pd compound corresponding to three atomic layers was further formed to form a thin film laminate having a width of 0.1 mm and a length of 3 mm. 1-3, No. of the comparative example. 20 was produced. FIG. 2 shows the No. of the example of the present invention created in this example. 1, no. Of the two thin film laminates, the case where Cu is laminated in two atomic layers and three atomic layers as a conductor layer is shown.

Also, under the same atomic layer formation conditions, the layered structure of constrained layer-conductor layer-constraint layer, the number of Cu atomic layers as a conductor layer is three, and the Cu ₃ Pt compound layer of constrained layer is 10 atomic layers The formed Comparative Example No. 21 thin film laminates were produced. As another comparative example, a Cu atomic layer is directly formed on a Si single crystal substrate without a constraining layer as a 1 atomic layer (Comparative Example No. 22), 3 atomic layer (Comparative Example No. 23), and 10 atomic layer (Comparative Example No.). .24) A thin film laminate was formed. The number of atomic layers was determined by observing the atomic layer state with an SPM (scanning stylus microscope) and a transmission electron microscope.
Using these thin film laminated materials, the DC electric resistance value was measured by the DC four-terminal method at room temperature and 77K. The DC electric resistance value was determined as a specific resistance value ρ _c (μΩcm) per conductor layer cross-sectional area at 77 K at room temperature and a specific resistance value ρ _tf (μΩcm) per thin film cross-sectional area. The results are shown in Table 2.

  From Table 2, No. of the present invention example. 1-No. In the thin film laminate shown in FIG. 3, the specific resistance value at room temperature is up to 4 atomic layers, and as the number of conductor layers increases, the cross-sectional area of the conductor layer in the thin film laminate increases. Decrease. However, it can be seen that when the number of continuous conductor layers is 10 atomic layers, the phonon vibration suppressing effect by the constraining layer does not work, and on the contrary, the resistivity value is very high. Comparative Example No. Even when the thickness of the constraining layer using the thin film laminated material of 21 is as thick as 10 atomic layers, the specific resistance value of the conductor layer shows a low value as in the other cases because of the effect of suppressing the phonon vibration of the constraining layer. However, since the thickness of the constraining layer is large, the specific resistance value of the entire thin film including the constraining layer having a high specific resistance is a high value. Further, Comparative Examples No. 22 to No. 22 in which no constraining layer was provided and the conductor layer was directly laminated on the Si substrate. In the case of 24, since the phonon vibration could not be suppressed, the specific resistance at room temperature was high for both the conductor layer and the entire thin film. On the other hand, at the low temperature of 77K, the materials of the invention examples and comparative examples shown in Table 2 show low values.

(Example 2)
Next, the difference of specific resistance value by the difference of the compound layer used for a constrained layer was calculated | required. In the same manner as in Example 1, three atomic layers of three types of CuPt, CuAu, and Cu ₃ Pd were formed on separate Si single crystal substrates having a surface orientation (100), and further each Si substrate was formed on each Si substrate. Three atomic layers of Cu layer were formed on the formed compound layer, and three atomic layers of the same compound layer as the compound layer formed on the Si substrate were formed thereon, and a book having a dimension width of 0.1 mm × length of 3 mm. Invention Example No. 4-No. 6 thin film laminates were produced. 3 shows an example No. 1 of the present invention in which a CuPt layer was used for the compound layer produced in Example 2. 5 shows a thin film laminated material.
The direct-current resistance value of the produced thin film laminate was measured by the same method as in Example 1 and obtained by converting into specific resistance values per cross-sectional area of the thin-film laminate and conductor cross-sectional area. The results are shown in Table 3. It should be noted that Example No. No. 4 Cu ₃ Pd as a constrained layer, and Comparative Example No. Samples having no constraining layer of 25 are the inventive example Nos. In Table 2 obtained in Example 1 above. 2, Comparative Example No. 23 data were cited.

Observation with a transmission electron microscope revealed that when a Cu ₃ Pd layer or a CuPt layer was used as the compound layer, the conductor layer and the constrained layer were in a perfectly aligned state. It was found that when a CuAu layer was used as the constraining layer, interfacial dislocation was introduced between the CuAu layer and the Cu layer, and the interface between the CuAu layer and the Cu layer was not a perfect matching interface.

Example No. of the present invention having a small misfit strain between the conductor layer and the constraining layer. No. 4 Cu ₃ Pd compound (misfit strain 1.66%) No. 5 CuPt compound (misfit strain 4.29%) is the invention example No. in which the constraining layer is made of CuAu in both the specific resistance value per conductor cross-sectional area at room temperature and the specific resistance per thin film cross-sectional area at room temperature. . 6 shows a smaller value than the case where the misfit strain of 6 is 9.0%.
The reason for this is that Example No. of the present invention. When the constrained layer having a large misfit strain of 9.0% of the conductor layer and the constrained layer shown in Fig. 6 is composed of a CuAu layer, the constrained layer is composed of Cu ₃ Pd because dislocation is introduced into the interface. No. 4 and Inventive Example No. 1 in which the constraining layer is made of CuPt. Compared with the case where the misfit strain of 5 is small and no interfacial dislocation exists, the result of the scattering of free electrons by interfacial dislocation shows a slightly higher specific resistance value. Comparative Example No. Since no constraining layer is present in No. 25, the effect of suppressing phonon scattering by free electrons does not exist, and thus the specific resistance value is the worst.

Further, the misfit strain is preferably positive on the plus side in the direction in which the interatomic distance of the conductor layer increases, because the mean free path of electrons is larger than that on the minus side, and phonon scattering is reduced.

(Example 3)
In Example 1 and Example 2, the result of the surface orientation of the (100) plane was shown. Here, the measurement result of the electric resistance of the thin film in which the conductor layer having the surface orientation of the (111) plane is formed on the Si substrate. Indicates. A Si single crystal substrate with a (111) plane orientation was prepared so that the surface orientation of the conductor layer was the (111) plane, and a film was formed in the order of constraining layer-conductive layer-constraining layer thereon. .
Specifically, in the same manner as in Example 1, three atomic layers of a PtV ₃ compound layer composed of three atomic layers are formed on a Si single crystal substrate having a surface orientation (111), and Cu is formed on the three atomic layers. As a result, the surface orientation of the Cu layer was (111). Further, three atomic layers of a PtV ₃ compound were formed thereon, and the present invention No. 1 having a width of 0.1 mm and a length of 3 mm was used. 7 thin film laminates were produced.
FIG. 4 shows a thin film laminated material in the case where the PtV ₃ compound layer is laminated with a Cu layer interposed therebetween.
The direct current resistance value of the produced thin film laminate was measured in the same manner as in Example 1, and the specific resistance value per thin film laminate cross section and conductor layer cross section was determined. The results are shown in Table 4.

Inventive Example No. The specific resistance value when the PtV3 compound layer having the surface orientation (111) shown in FIG. When a Cu3Pd layer having a surface orientation (100) orientation is used as the compound layer for the constraining layer shown in FIG. No. 2 in Table 3 shows a case where a CuPt layer having a surface orientation (100) orientation shown in FIG. As compared with the case of using the thin film laminate material No. 5, the same specific resistance values as those at room temperature and 77K can be obtained. From this, the present invention example No. When a PtV3 compound layer having a surface orientation (111) is used for the constraining layer as the constraining layer shown in FIG. Inventive Example No. The misfit strain of the constraining layer 7 and the conductor layer 7 is about 7.0% .

This No. 7 and the invention example No. described in Table 3. 4, no. 5, no. When the results of 6 are combined, it is considered that the magnitude of misfit strain is allowed up to about 9.0% as a practical level. A more desirable range is 7.0%, and a further desirable range is 4.3%.

Example 4
The result in the case of using elements other than Cu for a conductor layer in the combination of the constrained layer formed on a Si substrate and a conductor layer is shown. Here, both the constraining layer and the conductor layer contain an element common to the constituent elements (the same element), but it is not always necessary to contain an element common to the constituent elements of both layers. However, when the constraining layer and the conductor layer contain a common element, there is a merit that the electron orbit of the conductor layer is stabilized.
Three atomic layers of three types of compound layers of Ag ₃ In, Al ₃ Zr, and AuV ₃ are formed as a constraining layer on a Si single crystal substrate having a surface orientation (100) in the same manner as in Example 1, and on that, A conductor layer made of Ag, Al, and Au is generated for three atomic layers, and further, the same compound layer as the previous constraining layer is used as a constraining layer to generate three atomic layers. Inventive Example No. 8-No. Ten thin film laminates were produced. As a comparative example, a thin film laminate in which only three conductor layers are provided without a constraining layer is used as a comparative example. 26-No. 28 was produced.
The direct current resistance value of the produced thin film laminate was measured in the same manner as in Example 1, and the specific resistance value per thin film laminate cross section and conductor layer cross section was determined. The results are shown in Table 5.

Inventive Example No. 8-No. As shown in FIG. 10, when the conductor layer is an element other than Cu, the constraining layer Ag ₃ In and the conductor layer Ag, the constraining layer Al ₃ Zr and the conductor layer Al, and the constraining layer AuV ₃ and the conductor layer Au And the conductor layer have a laminated structure of constrained layer-conductor layer-constraint layer, the specific resistance value at room temperature is low for both the specific resistance value ρ _c per conductor layer cross-sectional area and the specific resistance value ρ _tf per thin film cross-sectional area. Indicates the value. On the other hand, Comparative Example No. in which no constraining layer is provided and a constraining layer consisting only of a conductor layer and a laminated structure of a conductor layer is not used. In No. 26 to No. 28, since the effect of suppressing phonon scattering is not recognized, the specific resistance value is high. From this, it can be seen that the effect of suppressing phonon scattering is not limited to the type of the conductor layer, and it is sufficient that the phonon scattering of the conductor layer can be suppressed by the constraining layer.

(Example 5)
Example 5 shows an example in which a laminated structure of a constraining layer and a conductor layer is laminated a plurality of times on a Si substrate. After growing a monoatomic layer using a Pt layer as a constrained layer on a Si single crystal substrate with a surface orientation (100), a Cu layer as a conductor layer is monoatomically stacked, and a Pt layer as a constrained layer and a Cu layer as a conductor layer are further stacked. After five layers are alternately formed, a Pt layer as a constraining layer is formed on one atomic layer thereon, and the present invention has a width of 0.1 mm and a length of 3 mm comprising six Pt layers and five Cu layers. Example No. 11 thin film laminates were produced.
The direct current resistance value of the produced thin film laminate was measured in the same manner as in Example 1, and the specific resistance value per thin film laminate cross section and conductor layer cross section was determined. The results are shown in Table 6.

  Inventive Example No. In the case of 11, the phonon scattering suppression effect of the constraining layer itself is less than that of the constraining layer as a compound layer, but the conductor layer has a large number of five layers and the Pt layer as the constraining layer is also conductive. Shows a very small specific resistance value. Thus, a favorable laminated circuit material can also be obtained by adopting a configuration in which the constraining layer and the conductor layer are repeatedly laminated a plurality of times.

  In the present invention, a Si single crystal is used as the substrate on which the constraining layer and the conductor layer of the present invention are laminated. However, as the substrate, it is sufficient if the constraining layer and the conductor layer can be laminated while maintaining lattice matching. As long as an arbitrary substrate can be used. In addition, as a means for laminating a constraining layer and a conductor layer while maintaining lattice matching as a substrate, if a Si single crystal or the like is provided on the substrate by a several atomic layer molecular beam epitaxy method or the like, the use of the laminated circuit material Accordingly, an oxide substrate, a resin substrate, a compound semiconductor, or the like can be used as the substrate in addition to the Si substrate. Devices with excellent high-frequency and high-speed response applied to semiconductor substrates and the like can be obtained.

It is a crystal structure figure of a compound layer which has a face center structure. 2 is an explanatory view showing an atomic layered state of the laminated circuit material of the present invention produced in Example 1. FIG. It is explanatory drawing which shows the atomic lamination | stacking state of this invention laminated circuit material produced in Example 2. FIG. It is explanatory drawing which shows the atomic lamination | stacking state of this invention laminated circuit material produced in Example 3. FIG. It is a perspective view explaining the conventional signal transmission line. It is sectional drawing of Cu wiring structure which used Cu for the metal thin film track | line.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Si substrate 2 Insulating film 3 Metal thin film line 4 Metal thin film grounding layer 5 Base metal layer 6 Cu wiring layer 7 Cu diffusion prevention insulating layer

Claims (7)

Single or multiple forms and the conductor layer constituting the atomic layer made of a single element of a plurality of layers of less than a monolayer or 10 atomic layers, more stable bonds than the interatomic bonds between the elements that constitute the conductive layer layered structure composed of a constraining layer and the substrate consist of multiple layers, forming a constraining layer onto the substrate to form a conductive layer and a constraining layer thereon an atomic layer made of elemental less than a monolayer or 10 atomic layers a is, as in the layered structure of laminating between atoms of the constraining layer and the conductive layer by atomic alignment state, strain misfit at the interface of the constraining layer and the conductive layer is 9.0% or less A laminated circuit material , wherein the conductor layer and the constraining layer are laminated on a substrate.   A circuit material in which a constraining layer and a conductor layer are laminated on a substrate so that the constraining layer and the conductor layer are laminated so that the constraining layer is the outermost layer, and the constraining layer and the conductor layer are in an atomically aligned state. The laminated circuit material according to claim 1, wherein the laminated circuit material is laminated.   In the circuit material comprising the conductor layer and the constraining layer, the structure thereof is a three-layer structure of constraining layer / conductor layer / constraining layer, or further a conductor layer / constraining layer two-layer structure once or plurally on the surface of the constraining layer. A circuit material obtained by laminating a laminated structure consisting of a repetitively laminated structure on a substrate, wherein the constraining layer and the conductor layer and the conductor layer and the constraining layer are laminated in an atomically aligned state. The laminated circuit material according to claim 1 or 2.   The conductor layer is composed of any element of Cu, Au, Ag, and Al, and the constraining layer has a crystal structure composed of a single element or a plurality of elements having a lattice constant close to the lattice constant of the conductor layer. The laminated circuit material according to claim 1, wherein the material is a laminated circuit material.   4. The laminated circuit material according to claim 1, wherein the conductor layer has a crystal structure having a face-centered structure as a basic structure.   The said constrained layer is composed of at least one compound layer selected from Cu3Pd, CuPt, CuAu, PtV3, Ag3In, Al3Zr, and AuV3 made of a monoatomic layer or a plurality of atomic layers. 5. The laminated circuit material according to 5. The layered circuit material according to any one of claims 1 to 6, wherein the surface orientation of both the constraining layer and the surface layer has either a (100) orientation or a (111) orientation.

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