JP4837320B2 - 加工対象物切断方法 - Google Patents

加工対象物切断方法 Download PDF

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Publication number
JP4837320B2
JP4837320B2 JP2005207559A JP2005207559A JP4837320B2 JP 4837320 B2 JP4837320 B2 JP 4837320B2 JP 2005207559 A JP2005207559 A JP 2005207559A JP 2005207559 A JP2005207559 A JP 2005207559A JP 4837320 B2 JP4837320 B2 JP 4837320B2
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Japan
Prior art keywords
workpiece
along
cutting line
laser light
region
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Expired - Lifetime
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JP2005207559A
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English (en)
Japanese (ja)
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JP2005313237A (ja
JP2005313237A5 (https=
Inventor
文嗣 福世
憲志 福満
直己 内山
敏光 和久田
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Priority to JP2005207559A priority Critical patent/JP4837320B2/ja
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Publication of JP2005313237A5 publication Critical patent/JP2005313237A5/ja
Application granted granted Critical
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/40—Semiconductor devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic materials other than metals or composite materials

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Laser Beam Processing (AREA)
  • Dicing (AREA)
JP2005207559A 2000-09-13 2005-07-15 加工対象物切断方法 Expired - Lifetime JP4837320B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005207559A JP4837320B2 (ja) 2000-09-13 2005-07-15 加工対象物切断方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2000278306 2000-09-13
JP2000278306 2000-09-13
JP2005207559A JP4837320B2 (ja) 2000-09-13 2005-07-15 加工対象物切断方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2001278752A Division JP3722731B2 (ja) 2000-09-13 2001-09-13 レーザ加工方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2006056690A Division JP3867109B2 (ja) 2000-09-13 2006-03-02 レーザ加工方法
JP2006069993A Division JP3867110B2 (ja) 2000-09-13 2006-03-14 レーザ加工方法

Publications (3)

Publication Number Publication Date
JP2005313237A JP2005313237A (ja) 2005-11-10
JP2005313237A5 JP2005313237A5 (https=) 2009-02-19
JP4837320B2 true JP4837320B2 (ja) 2011-12-14

Family

ID=35441201

Family Applications (1)

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JP2005207559A Expired - Lifetime JP4837320B2 (ja) 2000-09-13 2005-07-15 加工対象物切断方法

Country Status (1)

Country Link
JP (1) JP4837320B2 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4659300B2 (ja) 2000-09-13 2011-03-30 浜松ホトニクス株式会社 レーザ加工方法及び半導体チップの製造方法
ATE493226T1 (de) 2002-03-12 2011-01-15 Hamamatsu Photonics Kk Verfahren zum schneiden eines bearbeiteten objekts
ES2639733T3 (es) 2002-03-12 2017-10-30 Hamamatsu Photonics K.K. Método de división de sustrato
TWI326626B (en) 2002-03-12 2010-07-01 Hamamatsu Photonics Kk Laser processing method
TWI520269B (zh) 2002-12-03 2016-02-01 濱松赫德尼古斯股份有限公司 Cutting method of semiconductor substrate
FR2852250B1 (fr) 2003-03-11 2009-07-24 Jean Luc Jouvin Fourreau de protection pour canule, un ensemble d'injection comportant un tel fourreau et aiguille equipee d'un tel fourreau
CN1758985A (zh) 2003-03-12 2006-04-12 浜松光子学株式会社 激光加工方法
JP4563097B2 (ja) 2003-09-10 2010-10-13 浜松ホトニクス株式会社 半導体基板の切断方法
JP5328209B2 (ja) * 2007-06-15 2013-10-30 三菱電機株式会社 基板加工方法
CN103025478B (zh) * 2010-07-26 2015-09-30 浜松光子学株式会社 基板加工方法
US8828260B2 (en) * 2010-07-26 2014-09-09 Hamamatsu Photonics K.K. Substrate processing method
DE102020123786A1 (de) * 2020-09-11 2022-03-17 Trumpf Laser- Und Systemtechnik Gmbh Verfahren zum Trennen von Dünnstglas

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59150691A (ja) * 1983-02-15 1984-08-28 Matsushita Electric Ind Co Ltd レ−ザ加工機
JP2810151B2 (ja) * 1989-10-07 1998-10-15 ホーヤ株式会社 レーザマーキング方法
JP3024990B2 (ja) * 1990-08-31 2000-03-27 日本石英硝子株式会社 石英ガラス材料の切断加工方法
JPH04339586A (ja) * 1991-05-13 1992-11-26 Mitsubishi Electric Corp レーザ加工装置
JP3352934B2 (ja) * 1998-01-21 2002-12-03 理化学研究所 高強度超短パルスレーザー加工方法およびその装置
JP4132172B2 (ja) * 1998-02-06 2008-08-13 浜松ホトニクス株式会社 パルスレーザ加工装置

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10562130B1 (en) 2018-12-29 2020-02-18 Cree, Inc. Laser-assisted method for parting crystalline material
US10576585B1 (en) 2018-12-29 2020-03-03 Cree, Inc. Laser-assisted method for parting crystalline material
US11024501B2 (en) 2018-12-29 2021-06-01 Cree, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US11219966B1 (en) 2018-12-29 2022-01-11 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US11826846B2 (en) 2018-12-29 2023-11-28 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US11901181B2 (en) 2018-12-29 2024-02-13 Wolfspeed, Inc. Carrier-assisted method for parting crystalline material along laser damage region
US11911842B2 (en) 2018-12-29 2024-02-27 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US12594622B2 (en) 2018-12-29 2026-04-07 Wolfspeed, Inc. Laser-assisted method for parting crystalline material
US10611052B1 (en) 2019-05-17 2020-04-07 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11034056B2 (en) 2019-05-17 2021-06-15 Cree, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US11654596B2 (en) 2019-05-17 2023-05-23 Wolfspeed, Inc. Silicon carbide wafers with relaxed positive bow and related methods
US12070875B2 (en) 2019-05-17 2024-08-27 Wolfspeed, Inc. Silicon carbide wafers with relaxed positive bow and related methods

Also Published As

Publication number Publication date
JP2005313237A (ja) 2005-11-10

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