JP4836445B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4836445B2
JP4836445B2 JP2004357491A JP2004357491A JP4836445B2 JP 4836445 B2 JP4836445 B2 JP 4836445B2 JP 2004357491 A JP2004357491 A JP 2004357491A JP 2004357491 A JP2004357491 A JP 2004357491A JP 4836445 B2 JP4836445 B2 JP 4836445B2
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Prior art keywords
film
substrate
light
semiconductor device
semiconductor
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JP2004357491A
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Japanese (ja)
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JP2005197673A (ja
JP2005197673A5 (enExample
Inventor
徹 高山
康行 荒井
幸恵 鈴木
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2004357491A priority Critical patent/JP4836445B2/ja
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Publication of JP2005197673A5 publication Critical patent/JP2005197673A5/ja
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  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
  • Thin Film Transistor (AREA)
JP2004357491A 2003-12-12 2004-12-10 半導体装置の作製方法 Expired - Fee Related JP4836445B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004357491A JP4836445B2 (ja) 2003-12-12 2004-12-10 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2003414879 2003-12-12
JP2003414879 2003-12-12
JP2004357491A JP4836445B2 (ja) 2003-12-12 2004-12-10 半導体装置の作製方法

Publications (3)

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JP2005197673A JP2005197673A (ja) 2005-07-21
JP2005197673A5 JP2005197673A5 (enExample) 2007-12-13
JP4836445B2 true JP4836445B2 (ja) 2011-12-14

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JP2004357491A Expired - Fee Related JP4836445B2 (ja) 2003-12-12 2004-12-10 半導体装置の作製方法

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Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1760776B1 (en) * 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device with flexible substrate
KR100643091B1 (ko) 2005-10-05 2006-11-10 강원대학교산학협력단 광촉매 활성을 이용한 반도체 소자의 산화막 형성 방법
CN100375236C (zh) * 2005-11-30 2008-03-12 董玟昌 形成可分离界面的方法及使用此方法制作微机电薄膜
US8173519B2 (en) * 2006-03-03 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5288581B2 (ja) * 2006-03-03 2013-09-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8900970B2 (en) * 2006-04-28 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a flexible substrate
JP5364242B2 (ja) * 2006-04-28 2013-12-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7968382B2 (en) 2007-02-02 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP5388500B2 (ja) * 2007-08-30 2014-01-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR102012160B1 (ko) 2009-05-02 2019-08-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 패널
CN102422338B (zh) 2009-05-02 2015-04-01 株式会社半导体能源研究所 显示设备
JP2012109538A (ja) * 2010-10-29 2012-06-07 Tokyo Ohka Kogyo Co Ltd 積層体、およびその積層体の分離方法
JP5756334B2 (ja) 2010-10-29 2015-07-29 東京応化工業株式会社 積層体、およびその積層体の分離方法
JP5802106B2 (ja) 2010-11-15 2015-10-28 東京応化工業株式会社 積層体、および分離方法
TWI645578B (zh) * 2012-07-05 2018-12-21 半導體能源研究所股份有限公司 發光裝置及發光裝置的製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4619461B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜デバイスの転写方法、及びデバイスの製造方法
JP4027740B2 (ja) * 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1363319B1 (en) * 2002-05-17 2009-01-07 Semiconductor Energy Laboratory Co., Ltd. Method of transferring an object and method of manufacturing a semiconductor device

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JP2005197673A (ja) 2005-07-21

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