JP4827292B2 - Polishing equipment - Google Patents

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Publication number
JP4827292B2
JP4827292B2 JP2000334745A JP2000334745A JP4827292B2 JP 4827292 B2 JP4827292 B2 JP 4827292B2 JP 2000334745 A JP2000334745 A JP 2000334745A JP 2000334745 A JP2000334745 A JP 2000334745A JP 4827292 B2 JP4827292 B2 JP 4827292B2
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polishing
polished
thickness
time
optimum
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JP2002154053A (en
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サンジェイ ラジャラム
康浩 堀
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Applied Materials Inc
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Applied Materials Inc
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  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Description

【０００１】
【発明の属する技術分野】
本発明は研磨装置及び研磨方法に係り、特に、半導体ウェハ等の被研磨体の表面を平坦な鏡面に研磨する研磨装置及び研磨方法に関する。
【０００２】
【従来の技術】
近年、半導体デバイスの高集積化により回路配線が微細化しつつある。これに伴い、例えば、光リソグラフィー等で回路が形成される場合、光の焦点が浅くなるので、回路が形成される半導体ウェハの表面は平坦化されていることが必要になる。このような半導体ウェハ等の表面を平坦化する手段として、化学機械研磨（ケミカルメカニカルポリッシング）が用いられている。
【０００３】
化学機械研磨を行うための研磨装置は、表面に研磨パッドが貼着された研磨プラテンと、被研磨体を被研磨面が研磨プラテンに対向するように保持する研磨ヘッドとを備えている。そして、研磨プラテン及び研磨ヘッドは、それぞれ、回転軸に連結され回転可能となっている。
【０００４】
このような研磨装置においては、研磨ヘッドに保持された半導体ウェハは研磨プラテン表面の研磨パッドに押圧され、これと共に研磨プラテン及び研磨ヘッドが回転される。これによって、研磨ヘッドに保持された半導体ウェハは研磨パッドにより研磨される。
【０００５】
【発明が解決しようとする課題】
上記のような研磨装置においては、被研磨体が所望の平坦度又は厚さまで研磨されたときに研磨を終了させる必要がある。従来は、研磨の最中に被研磨体を研磨装置から取り外し、研磨が所望の平坦度又は厚さまで行われているかを評価し、研磨が不十分な場合、被研磨体を再度研磨装置に戻して研磨を続行するということが行われていた。しかし、このような方法は時間及び手間を必要とするという問題があった。また、研磨が過剰に行われると、その被研磨体は使用不可能となるため、材料のロスが大きいという問題もあった。
【０００６】
本発明は、上述した問題点を解決するためになされたものであり、適切な研磨時間を設定することにより半導体ウェハ等の被研磨体を所望の厚さ又は平坦度まで研磨することが可能な研磨装置及び研磨方法を提供することを目的とする。
【０００７】
【課題を解決するための手段】
以上の目的を達成するため、本発明の研磨装置は、被研磨体を研磨する研磨手段と、該研磨手段により研磨された被研磨体の研磨前の状態、研磨時間及び研磨後の状態を測定する測定手段と、該測定手段で得られたデータと前記被研磨体の最適研磨状態を表すデータとに基づいて、予め設定された計算式に従って、前記被研磨体の最適研磨時間を計算するプロセッサと、新たに研磨される被研磨体を前記プロセッサにより計算された最適研磨時間だけ研磨するように前記研磨手段を制御する制御手段とを備えるように構成した。
【０００８】
また、本発明の研磨方法は、研磨手段により被研磨体を研磨する研磨ステップと、該研磨ステップで研磨される被研磨体の研磨前の状態、研磨時間及び研磨後の状態を測定する測定ステップと、該測定ステップで得られたデータと前記被研磨体の最適研磨状態を表すデータとに基づいて予め設定された計算式に従って前記被研磨体の最適研磨時間を計算する計算ステップと、新たに研磨される被研磨体を前記プロセッサにより計算された最適研磨時間だけ研磨するように前記研磨手段を制御する制御ステップとを含むように構成した。
【０００９】
本発明の研磨装置及び研磨方法によれば、被研磨体の最適研磨状態、既に研磨された被研磨体の研磨前の状態、研磨後の状態、実際の研磨時間を含むパラメータから最適研磨時間を求め、新たに研磨される被研磨体は、この研磨時間だけ研磨されるようにしたので、被研磨体を最適状態に研磨することができる。
【００１０】
また、研磨時間を計算するための計算式を、上記のパラメータ及び＋、−、×、÷等の演算子を用いて使用者が自由に設定できるようにすることにより、被研磨体の種類、研磨装置の状態、使用環境等に応じて適切な最適研磨時間を求めることができ、被研磨体が最適状態となるように研磨することが可能になる。
【００１１】
【発明の実施の形態】
以下、図面を参照して本発明の実施の形態について説明する。
図１は、本発明の一実施形態に係る研磨装置１０を示す。この研磨装置１０は、半導体ウェハ等の被研磨体Ｗを研磨するための研磨装置本体２０と、研磨装置本体２０により研磨される被研磨体の研磨前厚さ、研磨時間及び研磨後厚さを測定する測定装置３０と、被研磨体Ｗの目標厚さと測定装置３０で得られたデータとに基づき適切な研磨時間を計算するためのプロセッサ４０と、このプロセッサ４０により計算された研磨時間だけ被研磨体Ｗを研磨するように研磨装置本体２０を制御する制御装置５０と、被研磨体Ｗを搬送する搬送装置６０と、上記構成要素の動作をモニタリングするモニター７０とを備えている。これらの要素はネットワークを形成するように連結されている。
【００１２】
研磨装置本体２０は、図２に示されるように、表面に研磨パッド２２が貼着された研磨プラテン２１と、被研磨体Ｗを保持する研磨ヘッド２３とを備えている。研磨ヘッド２３は、回転軸２４に連結され回転可能となっている。また、この回転軸２４は、平行移動アーム２５に連結され、研磨プラテン２１の一端から他端まで移動可能となっている。
【００１３】
研磨プラテン２１は、回転軸に連結され回転可能となっている。また、研磨パッド２２の下面には、発砲ウレタン等で形成された弾性マット２６が設けられており、この弾性マット２６を介して研磨パッド２２が保持される。
【００１４】
このような研磨装置本体２０においては、研磨ヘッド２３に保持された被研磨体Ｗは研磨プラテン２１上の研磨パッド２２に押圧され、これと共に研磨プラテン２１及び研磨ヘッド２３が回転される。このとき、研磨パッド２２には、水酸化カリウム等のアルカリ成分及びシリカ粒子等の微粒子を含む研磨剤が供給され、被研磨体Ｗはアルカリ成分による化学的作用と微粒子による機械的作用により研磨される。
【００１５】
測定装置３０は、研磨装置本体２０により研磨される被研磨体Ｗの研磨前厚さ、研磨後厚さ等の被研磨体の状態や実際の研磨時間を測定する。このような測定装置３０において、被研磨体の厚さが測定される場合、例えば、光干渉式膜厚測定器等を用いることができる。
【００１６】
プロセッサ４０は、測定装置３０により測定されデータ及び被研磨体の最適状態を示すデータに基づき予め定められた計算式により最適研磨時間を計算する。本発明に係る研磨装置１０においては、この計算式は、図３に示されるように、研磨前の厚さ、研磨後の厚さ、研磨時間、研磨レート、目標研磨量、補正定数等のパラメータと、＋、−、×、÷等の演算子を適宜用いることにより使用者が自由に設定することがでる。
【００１７】
例えば、既に研磨された被研磨体Ｗの研磨前の厚さ、研磨後の厚さ、実際の研磨時間及び目標厚さから研磨レート及び目標研磨量は以下の式により求めることができる。
【数１】

Figure 0004827292
【数２】
Figure 0004827292
次いで、上式により得られた研磨レート及び目標研磨量に基づき最適研磨時間は以下の式により求めることができる。
【数３】
Figure 0004827292
【００１８】
上記式によれば、例えば、研磨前の厚さが１５０００Å、研磨後の厚さが６５００Å、実際の研磨時間が６０秒で、目標厚さが５０００Åの場合、最適研磨時間は７０．６秒になる。
本発明に係る研磨装置１０においては、上記のような計算式は、被研磨体Ｗの種類、研磨装置１０の状態、使用環境等に応じて使用者が自由に設定することができる。
【００１９】
制御装置５０は、プロセッサ４０により計算された最適研磨時間だけ被研磨体が研磨されるように、研磨装置本体２０の研磨ヘッド２３及び研磨プラテン２１等を制御する。
搬送装置６０は、研磨装置本体２０と測定装置３０との間で被研磨体を搬送する。また、モニター７０は、上述した各構成の動作をモニタリングできるように構成されている。
【００２０】
次に、上記の研磨装置を用いた研磨方法について、図４を参照して説明する。
まず、所定の研磨時間を設定し（Ｓ１）、研磨装置本体２０によりこの研磨時間だけ被研磨体の研磨を行う（Ｓ２）。
【００２１】
そして、この研磨された被研磨体Ｗの厚さを測定装置３０により測定し（Ｓ３）、プロセッサ４０はこの測定された厚さが所定の目標厚さ範囲内か否かを判断する（Ｓ４）。
【００２２】
この測定された厚さが目標範囲内の場合、上記の研磨時間を最適研磨時間として、新たな被研磨体Ｗの研磨を行う。この測定された厚さが目標範囲内となっていない場合、プロセッサ４０は研磨された被研磨体Ｗの研磨前厚さ、研磨後厚さ、研磨時間及び目標厚さ等のパラメータ及び演算子を適宜用いて使用者が自由に設定した計算式により、最適研磨時間を計算する（Ｓ５）。
【００２３】
そして、上記の方法で得られた最適研磨時間を研磨時間として、研磨装置本体２０により新たな被研磨体Ｗの研磨が行われる。
以下、このようなステップが被研磨体毎に繰り返される。
【００２４】
上記のような研磨装置１０及び研磨方法によれば、被研磨体Ｗの目標厚さ、既に研磨された被研磨体Ｗの研磨前の厚さ、研磨後の厚さ及び実際の研磨時間等を含むパラメータから最適研磨時間を求め、新たに研磨される被研磨体がこの研磨時間だけ研磨されるので、被研磨体Ｗが目標の厚さとなるように研磨することができる。
【００２５】
また、研磨時間を計算するための計算式を、上記のパラメータ及び演算子を用いて使用者が自由に設定することができるようにしたので、被研磨体の種類、研磨装置の状態、使用環境等に応じた適切な最適研磨時間を求めることができ、被研磨体が目標厚さとなるように研磨することが可能になる。
【００２６】
なお、本発明は上述した実施例に限定されるものではなく、適宜変更することが可能である。例えば、最適研磨時間を計算するためのパラメータとしては、上述したものの他、被研磨体に対する研磨割合、日常点検時の研磨割合、薄膜形成時の研磨割合、装置固有の割合等を用いてもよい。また、上述した形態では、被研磨体の厚さに基づいて最適研磨時間が計算されているが、例えば、被研磨体の平坦度等に基づいて最適研磨時間を計算できるようにしてもよい。
【００２７】
【発明の効果】
以上の説明から明らかなように、発明の研磨装置及び研磨方法によれば、被研磨体の最適研磨状態、被研磨体の研磨前の状態、研磨後の状態及び実際の研磨時間を含むパラメータから最適研磨時間を求め、新たに研磨される被研磨体はこの最適研磨時間だけ研磨されるようにしたので、被研磨体を最適状態となるように研磨することが可能になる。
【００２８】
また、研磨時間を計算するための計算式を、上記のパラメータ及び演算子を用いて使用者が自由に設定できるようにすることにより、被研磨体の種類、研磨装置の状態、使用環境等に応じた適切な最適研磨時間を求めることが可能になる。
【図面の簡単な説明】
【図１】本発明の一実施形態に係る研磨装置の概略を示す図である。
【図２】図１の研磨装置の研磨装置本体の概略を示す図である。
【図３】最適研磨時間を計算するための計算式の設定方法を説明するための図である。
【図４】本発明に係る研磨方法の概略を示すフローチャートである。
【符号の説明】
１０ 研磨装置
２０ 研磨装置本体
３０ 測定装置
４０ プロセッサ
５０ 制御装置
Ｗ 被研磨体[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a polishing apparatus and a polishing method, and more particularly to a polishing apparatus and a polishing method for polishing a surface of an object to be polished such as a semiconductor wafer to a flat mirror surface.
[0002]
[Prior art]
In recent years, circuit wiring is becoming finer due to higher integration of semiconductor devices. Accordingly, for example, when a circuit is formed by photolithography or the like, since the focal point of light becomes shallow, the surface of the semiconductor wafer on which the circuit is formed needs to be flattened. As a means for flattening the surface of such a semiconductor wafer or the like, chemical mechanical polishing (chemical mechanical polishing) is used.
[0003]
A polishing apparatus for performing chemical mechanical polishing includes a polishing platen having a polishing pad attached to the surface, and a polishing head that holds an object to be polished so that the surface to be polished faces the polishing platen. Each of the polishing platen and the polishing head is connected to a rotation shaft and is rotatable.
[0004]
In such a polishing apparatus, the semiconductor wafer held by the polishing head is pressed against the polishing pad on the surface of the polishing platen, and the polishing platen and the polishing head are rotated together with this. As a result, the semiconductor wafer held by the polishing head is polished by the polishing pad.
[0005]
[Problems to be solved by the invention]
In the above polishing apparatus, it is necessary to finish the polishing when the object to be polished is polished to a desired flatness or thickness. Conventionally, during polishing, the object to be polished is removed from the polishing apparatus, and it is evaluated whether polishing is performed to a desired flatness or thickness. If polishing is insufficient, the object to be polished is returned to the polishing apparatus again. Then, polishing was continued. However, such a method has a problem of requiring time and labor. Further, if the polishing is performed excessively, the object to be polished becomes unusable, and there is a problem that the material loss is large.
[0006]
The present invention has been made to solve the above-described problems, and it is possible to polish an object to be polished such as a semiconductor wafer to a desired thickness or flatness by setting an appropriate polishing time. An object is to provide a polishing apparatus and a polishing method.
[0007]
[Means for Solving the Problems]
In order to achieve the above object, the polishing apparatus of the present invention measures a polishing means for polishing the object to be polished, and a state before polishing, a polishing time and a state after polishing of the object polished by the polishing means. And a processor for calculating an optimum polishing time of the object to be polished according to a preset calculation formula based on data obtained by the measuring means and data representing an optimum polishing state of the object to be polished. And a control means for controlling the polishing means so as to polish the object to be polished newly for the optimum polishing time calculated by the processor.
[0008]
In addition, the polishing method of the present invention includes a polishing step for polishing the object to be polished by the polishing means, and a measurement step for measuring the state before polishing, the polishing time, and the state after polishing of the object to be polished by the polishing step. A calculation step for calculating an optimum polishing time for the object to be polished according to a preset formula based on the data obtained in the measurement step and data representing the optimum polishing state of the object to be polished; And a control step of controlling the polishing means so as to polish the object to be polished for the optimum polishing time calculated by the processor.
[0009]
According to the polishing apparatus and the polishing method of the present invention, the optimum polishing time is determined from parameters including the optimum polishing state of the object to be polished, the state before polishing of the object to be polished, the state after polishing, and the actual polishing time. Since the object to be polished newly obtained is polished for this polishing time, the object to be polished can be polished in an optimum state.
[0010]
In addition, by allowing the user to freely set the calculation formula for calculating the polishing time using the above parameters and operators such as +, −, ×, ÷, the type of the object to be polished, An appropriate optimum polishing time can be obtained according to the state of the polishing apparatus, the use environment, etc., and the object to be polished can be polished so as to be in the optimum state.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Embodiments of the present invention will be described below with reference to the drawings.
FIG. 1 shows a polishing apparatus 10 according to an embodiment of the present invention. The polishing apparatus 10 includes a polishing apparatus main body 20 for polishing an object to be polished W such as a semiconductor wafer, and a thickness before polishing, a polishing time, and a thickness after polishing of the object to be polished by the polishing apparatus main body 20. A measuring device 30 for measuring, a processor 40 for calculating an appropriate polishing time based on a target thickness of the object to be polished W and data obtained by the measuring device 30, and a polishing time calculated by the processor 40. A control device 50 that controls the polishing apparatus main body 20 to polish the polishing body W, a transport device 60 that transports the object to be polished W, and a monitor 70 that monitors the operation of the above-described components are provided. These elements are connected so as to form a network.
[0012]
As shown in FIG. 2, the polishing apparatus main body 20 includes a polishing platen 21 having a polishing pad 22 attached to the surface, and a polishing head 23 that holds an object to be polished W. The polishing head 23 is connected to a rotation shaft 24 and is rotatable. The rotary shaft 24 is connected to a parallel movement arm 25 and can move from one end of the polishing platen 21 to the other end.
[0013]
The polishing platen 21 is connected to a rotating shaft and is rotatable. In addition, an elastic mat 26 made of foamed urethane or the like is provided on the lower surface of the polishing pad 22, and the polishing pad 22 is held via the elastic mat 26.
[0014]
In such a polishing apparatus main body 20, the object to be polished W held by the polishing head 23 is pressed against the polishing pad 22 on the polishing platen 21, and the polishing platen 21 and the polishing head 23 are rotated with this. At this time, a polishing agent containing an alkali component such as potassium hydroxide and fine particles such as silica particles is supplied to the polishing pad 22, and the object to be polished W is polished by a chemical action by the alkali component and a mechanical action by the fine particles. The
[0015]
The measuring device 30 measures the state of the object to be polished such as the thickness before polishing and the thickness after polishing of the body W to be polished by the polishing apparatus main body 20 and the actual polishing time. When the thickness of the object to be polished is measured in such a measuring apparatus 30, for example, an optical interference type film thickness measuring instrument or the like can be used.
[0016]
The processor 40 calculates the optimum polishing time by a predetermined calculation formula based on the data measured by the measuring device 30 and the data indicating the optimum state of the object to be polished. In the polishing apparatus 10 according to the present invention, as shown in FIG. 3, the calculation formulas are parameters such as thickness before polishing, thickness after polishing, polishing time, polishing rate, target polishing amount, correction constant, and the like. Then, the user can freely set by using operators such as +, −, ×, and ÷ as appropriate.
[0017]
For example, the polishing rate and the target polishing amount can be obtained by the following equations from the thickness before polishing, the thickness after polishing, the actual polishing time and the target thickness of the already polished workpiece W.
[Expression 1]
Figure 0004827292
[Expression 2]
Figure 0004827292
Next, the optimum polishing time can be obtained from the following equation based on the polishing rate and the target polishing amount obtained by the above equation.
[Equation 3]
Figure 0004827292
[0018]
According to the above formula, for example, when the thickness before polishing is 15000 mm, the thickness after polishing is 6500 mm, the actual polishing time is 60 seconds, and the target thickness is 5000 mm, the optimum polishing time is 70.6 seconds. Become.
In the polishing apparatus 10 according to the present invention, the calculation formula as described above can be freely set by the user according to the type of the object to be polished W, the state of the polishing apparatus 10, the use environment, and the like.
[0019]
The control device 50 controls the polishing head 23 and the polishing platen 21 of the polishing apparatus main body 20 so that the object to be polished is polished for the optimum polishing time calculated by the processor 40.
The conveying device 60 conveys the object to be polished between the polishing device main body 20 and the measuring device 30. The monitor 70 is configured to monitor the operation of each configuration described above.
[0020]
Next, a polishing method using the above polishing apparatus will be described with reference to FIG.
First, a predetermined polishing time is set (S1), and the object to be polished is polished by the polishing apparatus body 20 for this polishing time (S2).
[0021]
Then, the thickness of the polished workpiece W is measured by the measuring device 30 (S3), and the processor 40 determines whether or not the measured thickness is within a predetermined target thickness range (S4). .
[0022]
When the measured thickness is within the target range, the new object W is polished using the above polishing time as the optimum polishing time. If the measured thickness is not within the target range, the processor 40 sets parameters and operators such as the thickness before polishing, the thickness after polishing, the polishing time, and the target thickness of the polished workpiece W. The optimum polishing time is calculated according to a calculation formula that is appropriately used and set by the user (S5).
[0023]
Then, a new object to be polished W is polished by the polishing apparatus body 20 using the optimum polishing time obtained by the above method as the polishing time.
Hereinafter, such steps are repeated for each object to be polished.
[0024]
According to the polishing apparatus 10 and the polishing method as described above, the target thickness of the object to be polished W, the thickness of the object to be polished W before polishing, the thickness after polishing, the actual polishing time, etc. The optimum polishing time is obtained from the included parameters, and the object to be polished newly is polished for this polishing time, so that the object to be polished W can be polished to the target thickness.
[0025]
In addition, since the calculation formula for calculating the polishing time can be freely set by the user using the above parameters and operators, the type of object to be polished, the state of the polishing apparatus, and the usage environment Accordingly, it is possible to obtain an appropriate optimum polishing time according to the above, and to polish the object to be polished to a target thickness.
[0026]
In addition, this invention is not limited to the Example mentioned above, It can change suitably. For example, as the parameters for calculating the optimum polishing time, in addition to those described above, a polishing rate for the object to be polished, a polishing rate during daily inspection, a polishing rate during thin film formation, a device-specific rate, etc. may be used. . In the above-described embodiment, the optimum polishing time is calculated based on the thickness of the object to be polished. However, for example, the optimum polishing time may be calculated based on the flatness of the object to be polished.
[0027]
【The invention's effect】
As is clear from the above description, according to the polishing apparatus and the polishing method of the invention, from the parameters including the optimum polishing state of the object to be polished, the state before polishing of the object to be polished, the state after polishing and the actual polishing time. Since the optimum polishing time is obtained and the object to be newly polished is polished for the optimum polishing time, the object to be polished can be polished to the optimum state.
[0028]
In addition, by allowing the user to freely set the calculation formula for calculating the polishing time using the above parameters and operators, the type of object to be polished, the state of the polishing apparatus, the usage environment, etc. An appropriate optimum polishing time can be determined accordingly.
[Brief description of the drawings]
FIG. 1 is a diagram schematically showing a polishing apparatus according to an embodiment of the present invention.
FIG. 2 is a diagram showing an outline of a polishing apparatus main body of the polishing apparatus of FIG. 1;
FIG. 3 is a diagram for explaining a method of setting a calculation formula for calculating an optimum polishing time.
FIG. 4 is a flowchart showing an outline of a polishing method according to the present invention.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 10 Polishing apparatus 20 Polishing apparatus main body 30 Measuring apparatus 40 Processor 50 Control apparatus W To-be-polished object

Claims (2)

被研磨体を研磨する研磨手段と、
該研磨手段により研磨される被研磨体の研磨前の厚さ、研磨時間及び研磨後の厚さを測定する測定手段と、
該測定手段で得られたデータと前記被研磨体の厚さの目標値とに基づき前記被研磨体の最適研磨時間を計算するプロセッサと、
新たに研磨される被研磨体を前記プロセッサにより計算された最適研磨時間だけ研磨するように前記研磨手段を制御する制御手段とを備え、
前記プロセッサは、前記被研磨体の研磨前の厚さ、研磨時間、研磨後の厚さ及び前記被研磨体の厚さの目標値を含むパラメータと演算子とを用いて前記被研磨体の最適研磨時間を計算する計算式を使用者が設定できるようにする計算式設定手段を与え、
前記プロセッサは、今回、研磨した被研磨体の厚さが目標膜厚範囲内にあるときは、前記計算式設定手段を介することなく次の被研磨体に対して今回の被研磨体に適用したのと同一の最適研磨時間で研磨が行なわれるように前記制御手段を制御し、今回、研磨した被研磨体の厚さが目標膜厚範囲内にないときは、前記計算式設定手段を介して再設定される計算式により最適研磨時間を再計算し、再計算した最適研磨時間で研磨が行なわれるように前記制御手段を制御する、
研磨装置。Polishing means for polishing the object to be polished;
Measuring means for measuring the thickness before polishing, the polishing time and the thickness after polishing of the object to be polished by the polishing means;
A processor for calculating an optimum polishing time for the object to be polished based on data obtained by the measuring means and a target value of the thickness of the object to be polished;
Control means for controlling the polishing means so as to polish an object to be polished newly for the optimum polishing time calculated by the processor;
The processor uses a parameter and an operator including a target value of a thickness before polishing, a polishing time, a thickness after polishing, and a thickness of the target to be polished. Provides a formula setting means that allows the user to set the formula for calculating the polishing time ,
When the thickness of the object to be polished is within the target film thickness range, the processor applied to the object to be polished for the next object to be polished without going through the calculation formula setting means. The control means is controlled so that the polishing is performed with the same optimum polishing time as the above, and when the thickness of the object to be polished is not within the target film thickness range this time, via the calculation formula setting means Recalculating the optimum polishing time by the recalculated formula, and controlling the control means so that the polishing is performed with the recalculated optimum polishing time;
Polishing equipment. 前記プロセッサは、前記被研磨体の研磨前の厚さ、研磨時間及び研磨後の厚さから前記被研磨体の研磨レートを計算し、該研磨レートを用いて前記被研磨体の最適研磨時間を計算する請求項１記載の研磨装置。  The processor calculates a polishing rate of the object to be polished from a thickness before polishing of the object to be polished, a polishing time, and a thickness after polishing, and uses the polishing rate to determine an optimum polishing time of the object to be polished. The polishing apparatus according to claim 1 to calculate.
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