JP2002154053A - Polishing device and polishing method - Google Patents
Polishing device and polishing methodInfo
- Publication number
- JP2002154053A JP2002154053A JP2000334745A JP2000334745A JP2002154053A JP 2002154053 A JP2002154053 A JP 2002154053A JP 2000334745 A JP2000334745 A JP 2000334745A JP 2000334745 A JP2000334745 A JP 2000334745A JP 2002154053 A JP2002154053 A JP 2002154053A
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- JP
- Japan
- Prior art keywords
- polishing
- polished
- thickness
- time
- optimum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は研磨装置及び研磨方
法に係り、特に、半導体ウェハ等の被研磨体の表面を平
坦な鏡面に研磨する研磨装置及び研磨方法に関する。The present invention relates to a polishing apparatus and a polishing method, and more particularly to a polishing apparatus and a polishing method for polishing a surface of an object to be polished such as a semiconductor wafer to a flat mirror surface.
【０００２】[0002]
【従来の技術】近年、半導体デバイスの高集積化により
回路配線が微細化しつつある。これに伴い、例えば、光
リソグラフィー等で回路が形成される場合、光の焦点が
浅くなるので、回路が形成される半導体ウェハの表面は
平坦化されていることが必要になる。このような半導体
ウェハ等の表面を平坦化する手段として、化学機械研磨
（ケミカルメカニカルポリッシング）が用いられてい
る。2. Description of the Related Art In recent years, circuit wiring has been miniaturized due to high integration of semiconductor devices. Accordingly, for example, when a circuit is formed by photolithography or the like, since the focus of light becomes shallow, the surface of the semiconductor wafer on which the circuit is formed needs to be flattened. As a means for flattening the surface of such a semiconductor wafer or the like, chemical mechanical polishing (chemical mechanical polishing) is used.
【０００３】化学機械研磨を行うための研磨装置は、表
面に研磨パッドが貼着された研磨プラテンと、被研磨体
を被研磨面が研磨プラテンに対向するように保持する研
磨ヘッドとを備えている。そして、研磨プラテン及び研
磨ヘッドは、それぞれ、回転軸に連結され回転可能とな
っている。A polishing apparatus for performing chemical mechanical polishing includes a polishing platen having a polishing pad adhered to a surface thereof, and a polishing head for holding an object to be polished such that a surface to be polished faces the polishing platen. I have. The polishing platen and the polishing head are each connected to a rotating shaft and are rotatable.
【０００４】このような研磨装置においては、研磨ヘッ
ドに保持された半導体ウェハは研磨プラテン表面の研磨
パッドに押圧され、これと共に研磨プラテン及び研磨ヘ
ッドが回転される。これによって、研磨ヘッドに保持さ
れた半導体ウェハは研磨パッドにより研磨される。In such a polishing apparatus, a semiconductor wafer held by a polishing head is pressed against a polishing pad on the surface of a polishing platen, and the polishing platen and the polishing head are rotated together with this. Thus, the semiconductor wafer held by the polishing head is polished by the polishing pad.
【０００５】[0005]
【発明が解決しようとする課題】上記のような研磨装置
においては、被研磨体が所望の平坦度又は厚さまで研磨
されたときに研磨を終了させる必要がある。従来は、研
磨の最中に被研磨体を研磨装置から取り外し、研磨が所
望の平坦度又は厚さまで行われているかを評価し、研磨
が不十分な場合、被研磨体を再度研磨装置に戻して研磨
を続行するということが行われていた。しかし、このよ
うな方法は時間及び手間を必要とするという問題があっ
た。また、研磨が過剰に行われると、その被研磨体は使
用不可能となるため、材料のロスが大きいという問題も
あった。In the above-described polishing apparatus, it is necessary to finish polishing when the object to be polished is polished to a desired flatness or thickness. Conventionally, the object to be polished is removed from the polishing apparatus during polishing, and it is evaluated whether polishing is performed to a desired flatness or thickness.If the polishing is insufficient, the object to be polished is returned to the polishing apparatus again. To continue polishing. However, such a method has a problem that time and labor are required. In addition, if the polishing is performed excessively, the object to be polished becomes unusable, so that there is a problem that the loss of material is large.
【０００６】本発明は、上述した問題点を解決するため
になされたものであり、適切な研磨時間を設定すること
により半導体ウェハ等の被研磨体を所望の厚さ又は平坦
度まで研磨することが可能な研磨装置及び研磨方法を提
供することを目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems, and is intended to polish an object to be polished such as a semiconductor wafer to a desired thickness or flatness by setting an appropriate polishing time. It is an object of the present invention to provide a polishing apparatus and a polishing method capable of performing polishing.
【０００７】[0007]
【課題を解決するための手段】以上の目的を達成するた
め、本発明の研磨装置は、被研磨体を研磨する研磨手段
と、該研磨手段により研磨された被研磨体の研磨前の状
態、研磨時間及び研磨後の状態を測定する測定手段と、
該測定手段で得られたデータと前記被研磨体の最適研磨
状態を表すデータとに基づいて、予め設定された計算式
に従って、前記被研磨体の最適研磨時間を計算するプロ
セッサと、新たに研磨される被研磨体を前記プロセッサ
により計算された最適研磨時間だけ研磨するように前記
研磨手段を制御する制御手段とを備えるように構成し
た。In order to achieve the above object, a polishing apparatus of the present invention comprises a polishing means for polishing an object to be polished, a state before polishing of the object to be polished by the polishing means, Measuring means for measuring the polishing time and the state after polishing,
A processor for calculating an optimum polishing time of the object to be polished in accordance with a preset calculation formula based on the data obtained by the measuring means and data representing the optimum polishing state of the object to be polished; Control means for controlling the polishing means so as to polish the object to be polished for the optimum polishing time calculated by the processor.
【０００８】また、本発明の研磨方法は、研磨手段によ
り被研磨体を研磨する研磨ステップと、該研磨ステップ
で研磨される被研磨体の研磨前の状態、研磨時間及び研
磨後の状態を測定する測定ステップと、該測定ステップ
で得られたデータと前記被研磨体の最適研磨状態を表す
データとに基づいて予め設定された計算式に従って前記
被研磨体の最適研磨時間を計算する計算ステップと、新
たに研磨される被研磨体を前記プロセッサにより計算さ
れた最適研磨時間だけ研磨するように前記研磨手段を制
御する制御ステップとを含むように構成した。In the polishing method of the present invention, a polishing step of polishing the object to be polished by the polishing means, and a state before polishing, a polishing time, and a state after polishing of the object to be polished in the polishing step are measured. A measuring step, and a calculating step of calculating an optimal polishing time of the object to be polished in accordance with a calculation formula set in advance based on data obtained in the measuring step and data representing an optimal polishing state of the object to be polished, And controlling the polishing means so as to polish the object to be polished newly for the optimum polishing time calculated by the processor.
【０００９】本発明の研磨装置及び研磨方法によれば、
被研磨体の最適研磨状態、既に研磨された被研磨体の研
磨前の状態、研磨後の状態、実際の研磨時間を含むパラ
メータから最適研磨時間を求め、新たに研磨される被研
磨体は、この研磨時間だけ研磨されるようにしたので、
被研磨体を最適状態に研磨することができる。According to the polishing apparatus and the polishing method of the present invention,
The optimum polishing state of the object to be polished, the state before polishing of the object to be polished, the state after polishing, the optimum polishing time is determined from parameters including the actual polishing time, and the object to be newly polished is Because it was polished for this polishing time,
The object to be polished can be polished to an optimum state.
【００１０】また、研磨時間を計算するための計算式
を、上記のパラメータ及び＋、−、×、÷等の演算子を
用いて使用者が自由に設定できるようにすることによ
り、被研磨体の種類、研磨装置の状態、使用環境等に応
じて適切な最適研磨時間を求めることができ、被研磨体
が最適状態となるように研磨することが可能になる。The user can freely set a calculation formula for calculating the polishing time by using the above-mentioned parameters and operators such as +,-, x, ÷, etc. The optimal polishing time can be determined in accordance with the type of the polishing apparatus, the state of the polishing apparatus, the use environment, and the like, and the object to be polished can be polished so as to be in the optimal state.
【００１１】[0011]
【発明の実施の形態】以下、図面を参照して本発明の実
施の形態について説明する。図１は、本発明の一実施形
態に係る研磨装置１０を示す。この研磨装置１０は、半
導体ウェハ等の被研磨体Ｗを研磨するための研磨装置本
体２０と、研磨装置本体２０により研磨される被研磨体
の研磨前厚さ、研磨時間及び研磨後厚さを測定する測定
装置３０と、被研磨体Ｗの目標厚さと測定装置３０で得
られたデータとに基づき適切な研磨時間を計算するため
のプロセッサ４０と、このプロセッサ４０により計算さ
れた研磨時間だけ被研磨体Ｗを研磨するように研磨装置
本体２０を制御する制御装置５０と、被研磨体Ｗを搬送
する搬送装置６０と、上記構成要素の動作をモニタリン
グするモニター７０とを備えている。これらの要素はネ
ットワークを形成するように連結されている。Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows a polishing apparatus 10 according to one embodiment of the present invention. The polishing apparatus 10 includes a polishing apparatus main body 20 for polishing an object W to be polished such as a semiconductor wafer, and a thickness before polishing, a polishing time, and a thickness after polishing of the object to be polished by the polishing apparatus main body 20. A measuring device 30 for measuring, a processor 40 for calculating an appropriate polishing time based on the target thickness of the object W to be polished and data obtained by the measuring device 30, and a polishing time calculated by the processor 40; The apparatus includes a control device 50 for controlling the polishing apparatus main body 20 so as to polish the polishing object W, a transport device 60 for transporting the polishing object W, and a monitor 70 for monitoring the operation of the above-mentioned components. These elements are linked to form a network.
【００１２】研磨装置本体２０は、図２に示されるよう
に、表面に研磨パッド２２が貼着された研磨プラテン２
１と、被研磨体Ｗを保持する研磨ヘッド２３とを備えて
いる。研磨ヘッド２３は、回転軸２４に連結され回転可
能となっている。また、この回転軸２４は、平行移動ア
ーム２５に連結され、研磨プラテン２１の一端から他端
まで移動可能となっている。As shown in FIG. 2, the polishing apparatus main body 20 has a polishing platen 2 having a polishing pad 22 adhered to the surface thereof.
1 and a polishing head 23 for holding the object W to be polished. The polishing head 23 is connected to a rotating shaft 24 and is rotatable. The rotating shaft 24 is connected to a parallel moving arm 25 and is movable from one end of the polishing platen 21 to the other end.
【００１３】研磨プラテン２１は、回転軸に連結され回
転可能となっている。また、研磨パッド２２の下面に
は、発砲ウレタン等で形成された弾性マット２６が設け
られており、この弾性マット２６を介して研磨パッド２
２が保持される。The polishing platen 21 is connected to a rotating shaft and is rotatable. An elastic mat 26 made of foamed urethane or the like is provided on the lower surface of the polishing pad 22.
2 is retained.
【００１４】このような研磨装置本体２０においては、
研磨ヘッド２３に保持された被研磨体Ｗは研磨プラテン
２１上の研磨パッド２２に押圧され、これと共に研磨プ
ラテン２１及び研磨ヘッド２３が回転される。このと
き、研磨パッド２２には、水酸化カリウム等のアルカリ
成分及びシリカ粒子等の微粒子を含む研磨剤が供給さ
れ、被研磨体Ｗはアルカリ成分による化学的作用と微粒
子による機械的作用により研磨される。In such a polishing apparatus main body 20,
The object W to be polished held by the polishing head 23 is pressed against the polishing pad 22 on the polishing platen 21, and the polishing platen 21 and the polishing head 23 are rotated together with this. At this time, an abrasive containing an alkali component such as potassium hydroxide and fine particles such as silica particles is supplied to the polishing pad 22, and the object to be polished W is polished by a chemical action of the alkali component and a mechanical action of the fine particles. You.
【００１５】測定装置３０は、研磨装置本体２０により
研磨される被研磨体Ｗの研磨前厚さ、研磨後厚さ等の被
研磨体の状態や実際の研磨時間を測定する。このような
測定装置３０において、被研磨体の厚さが測定される場
合、例えば、光干渉式膜厚測定器等を用いることができ
る。The measuring device 30 measures the state of the object to be polished, such as the thickness before polishing and the thickness after polishing, of the object W to be polished by the main body 20, and the actual polishing time. When the thickness of the object to be polished is measured by such a measuring device 30, for example, an optical interference type film thickness measuring device or the like can be used.
【００１６】プロセッサ４０は、測定装置３０により測
定されデータ及び被研磨体の最適状態を示すデータに基
づき予め定められた計算式により最適研磨時間を計算す
る。本発明に係る研磨装置１０においては、この計算式
は、図３に示されるように、研磨前の厚さ、研磨後の厚
さ、研磨時間、研磨レート、目標研磨量、補正定数等の
パラメータと、＋、−、×、÷等の演算子を適宜用いる
ことにより使用者が自由に設定することがでる。The processor 40 calculates an optimum polishing time according to a predetermined formula based on the data measured by the measuring device 30 and the data indicating the optimum state of the object to be polished. In the polishing apparatus 10 according to the present invention, as shown in FIG. 3, the calculation formulas include parameters such as a thickness before polishing, a thickness after polishing, a polishing time, a polishing rate, a target polishing amount, and a correction constant. By using operators such as, +,-, x, and 適宜 as appropriate, the user can freely set them.
【００１７】例えば、既に研磨された被研磨体Ｗの研磨
前の厚さ、研磨後の厚さ、実際の研磨時間及び目標厚さ
から研磨レート及び目標研磨量は以下の式により求める
ことができる。For example, the polishing rate and target polishing amount can be obtained from the following formulas based on the thickness of the polished workpiece W before polishing, the thickness after polishing, the actual polishing time and the target thickness. .
【数１】 (Equation 1)
【数２】 次いで、上式により得られた研磨レート及び目標研磨量
に基づき最適研磨時間は以下の式により求めることがで
きる。(Equation 2) Next, based on the polishing rate and the target polishing amount obtained by the above equation, the optimum polishing time can be obtained by the following equation.
【数３】 (Equation 3)
【００１８】上記式によれば、例えば、研磨前の厚さが
１５０００Å、研磨後の厚さが６５００Å、実際の研磨
時間が６０秒で、目標厚さが５０００Åの場合、最適研
磨時間は７０．６秒になる。本発明に係る研磨装置１０
においては、上記のような計算式は、被研磨体Ｗの種
類、研磨装置１０の状態、使用環境等に応じて使用者が
自由に設定することができる。According to the above equation, for example, when the thickness before polishing is 15000 °, the thickness after polishing is 6500 °, the actual polishing time is 60 seconds, and the target thickness is 5000 °, the optimum polishing time is 70.000. 6 seconds. Polishing apparatus 10 according to the present invention
In the above, the above formula can be freely set by the user according to the type of the object to be polished W, the state of the polishing apparatus 10, the use environment and the like.
【００１９】制御装置５０は、プロセッサ４０により計
算された最適研磨時間だけ被研磨体が研磨されるよう
に、研磨装置本体２０の研磨ヘッド２３及び研磨プラテ
ン２１等を制御する。搬送装置６０は、研磨装置本体２
０と測定装置３０との間で被研磨体を搬送する。また、
モニター７０は、上述した各構成の動作をモニタリング
できるように構成されている。The control device 50 controls the polishing head 23 and the polishing platen 21 of the polishing apparatus main body 20 so that the object to be polished is polished for the optimum polishing time calculated by the processor 40. The transfer device 60 is provided in the polishing device body 2.
The object to be polished is transported between 0 and the measuring device 30. Also,
The monitor 70 is configured to monitor the operation of each configuration described above.
【００２０】次に、上記の研磨装置を用いた研磨方法に
ついて、図４を参照して説明する。まず、所定の研磨時
間を設定し（Ｓ１）、研磨装置本体２０によりこの研磨
時間だけ被研磨体の研磨を行う（Ｓ２）。Next, a polishing method using the above polishing apparatus will be described with reference to FIG. First, a predetermined polishing time is set (S1), and the object to be polished is polished by the polishing apparatus body 20 for the polishing time (S2).
【００２１】そして、この研磨された被研磨体Ｗの厚さ
を測定装置３０により測定し（Ｓ３）、プロセッサ４０
はこの測定された厚さが所定の目標厚さ範囲内か否かを
判断する（Ｓ４）。Then, the thickness of the polished workpiece W is measured by the measuring device 30 (S3), and the processor 40
Determines whether the measured thickness is within a predetermined target thickness range (S4).
【００２２】この測定された厚さが目標範囲内の場合、
上記の研磨時間を最適研磨時間として、新たな被研磨体
Ｗの研磨を行う。この測定された厚さが目標範囲内とな
っていない場合、プロセッサ４０は研磨された被研磨体
Ｗの研磨前厚さ、研磨後厚さ、研磨時間及び目標厚さ等
のパラメータ及び演算子を適宜用いて使用者が自由に設
定した計算式により、最適研磨時間を計算する（Ｓ
５）。If the measured thickness is within the target range,
A new polishing object W is polished using the above polishing time as the optimum polishing time. If the measured thickness is not within the target range, the processor 40 sets parameters and operators such as the pre-polishing thickness, the post-polishing thickness, the polishing time and the target thickness of the polished workpiece W. The optimum polishing time is calculated by a calculation formula which is appropriately used and freely set by the user (S
5).
【００２３】そして、上記の方法で得られた最適研磨時
間を研磨時間として、研磨装置本体２０により新たな被
研磨体Ｗの研磨が行われる。以下、このようなステップ
が被研磨体毎に繰り返される。Then, using the optimum polishing time obtained by the above method as a polishing time, a new polishing object W is polished by the polishing apparatus main body 20. Hereinafter, such steps are repeated for each object to be polished.
【００２４】上記のような研磨装置１０及び研磨方法に
よれば、被研磨体Ｗの目標厚さ、既に研磨された被研磨
体Ｗの研磨前の厚さ、研磨後の厚さ及び実際の研磨時間
等を含むパラメータから最適研磨時間を求め、新たに研
磨される被研磨体がこの研磨時間だけ研磨されるので、
被研磨体Ｗが目標の厚さとなるように研磨することがで
きる。According to the polishing apparatus 10 and the polishing method as described above, the target thickness of the object W to be polished, the thickness of the already polished object W before polishing, the thickness after polishing, and the actual polishing The optimum polishing time is determined from parameters including time and the like, and the object to be polished is polished by the polishing time.
The object to be polished W can be polished so as to have a target thickness.
【００２５】また、研磨時間を計算するための計算式
を、上記のパラメータ及び演算子を用いて使用者が自由
に設定することができるようにしたので、被研磨体の種
類、研磨装置の状態、使用環境等に応じた適切な最適研
磨時間を求めることができ、被研磨体が目標厚さとなる
ように研磨することが可能になる。Also, the calculation formula for calculating the polishing time can be freely set by the user using the above-mentioned parameters and operators, so that the type of the object to be polished and the state of the polishing apparatus can be set. In addition, it is possible to obtain an appropriate optimum polishing time according to the use environment and the like, and it is possible to polish the object to be polished so as to have a target thickness.
【００２６】なお、本発明は上述した実施例に限定され
るものではなく、適宜変更することが可能である。例え
ば、最適研磨時間を計算するためのパラメータとして
は、上述したものの他、被研磨体に対する研磨割合、日
常点検時の研磨割合、薄膜形成時の研磨割合、装置固有
の割合等を用いてもよい。また、上述した形態では、被
研磨体の厚さに基づいて最適研磨時間が計算されている
が、例えば、被研磨体の平坦度等に基づいて最適研磨時
間を計算できるようにしてもよい。It should be noted that the present invention is not limited to the above-described embodiment, but can be appropriately modified. For example, as the parameters for calculating the optimum polishing time, in addition to those described above, a polishing ratio for the object to be polished, a polishing ratio at the time of daily inspection, a polishing ratio at the time of forming a thin film, a device-specific ratio, etc. . In the above-described embodiment, the optimum polishing time is calculated based on the thickness of the object to be polished. However, the optimum polishing time may be calculated based on, for example, the flatness of the object to be polished.
【００２７】[0027]
【発明の効果】以上の説明から明らかなように、発明の
研磨装置及び研磨方法によれば、被研磨体の最適研磨状
態、被研磨体の研磨前の状態、研磨後の状態及び実際の
研磨時間を含むパラメータから最適研磨時間を求め、新
たに研磨される被研磨体はこの最適研磨時間だけ研磨さ
れるようにしたので、被研磨体を最適状態となるように
研磨することが可能になる。As is apparent from the above description, according to the polishing apparatus and the polishing method of the present invention, the optimum polishing state of the object to be polished, the state before polishing, the state after polishing, and the actual polishing The optimum polishing time is determined from the parameters including the time, and the object to be polished newly is polished by the optimum polishing time. Therefore, the object to be polished can be polished so as to be in the optimum state. .
【００２８】また、研磨時間を計算するための計算式
を、上記のパラメータ及び演算子を用いて使用者が自由
に設定できるようにすることにより、被研磨体の種類、
研磨装置の状態、使用環境等に応じた適切な最適研磨時
間を求めることが可能になる。Further, by allowing a user to freely set a calculation formula for calculating a polishing time by using the above-mentioned parameters and operators, the type of the object to be polished,
It is possible to obtain an appropriate optimum polishing time according to the state of the polishing apparatus, the use environment, and the like.
【図１】本発明の一実施形態に係る研磨装置の概略を示
す図である。FIG. 1 is a view schematically showing a polishing apparatus according to an embodiment of the present invention.
【図２】図１の研磨装置の研磨装置本体の概略を示す図
である。FIG. 2 is a view schematically showing a polishing apparatus main body of the polishing apparatus of FIG. 1;
【図３】最適研磨時間を計算するための計算式の設定方
法を説明するための図である。FIG. 3 is a diagram for explaining a method of setting a calculation formula for calculating an optimum polishing time.
【図４】本発明に係る研磨方法の概略を示すフローチャ
ートである。FIG. 4 is a flowchart schematically showing a polishing method according to the present invention.
１０ 研磨装置 ２０ 研磨装置本体 ３０ 測定装置 ４０ プロセッサ ５０ 制御装置 Ｗ 被研磨体 DESCRIPTION OF SYMBOLS 10 Polishing apparatus 20 Polishing apparatus main body 30 Measuring apparatus 40 Processor 50 Control apparatus W Polished object
フロントページの続き (72)発明者 ラジャラム サンジェイ 千葉県成田市新泉14−３ 野毛平工業団地 内 アプライド マテリアルズ ジャパン 株式会社内 (72)発明者 堀 康浩 千葉県成田市新泉14−３ 野毛平工業団地 内 アプライド マテリアルズ ジャパン 株式会社内 Ｆターム(参考） 3C034 AA13 BB73 BB93 CA02 CA05 CA13 CA15 CA22 CB01 DD07 DD10 3C058 AA07 AB04 AC02 BA02 BA09 BB09 BC02 CB01 DA17 Continuing on the front page (72) Inventor Rajaram Sanjay 14-3 Shinizumi, Narita-shi, Chiba Nogehira Industrial Park In Applied Materials Japan Inc. (72) Inventor Yasuhiro Hori 14-3 Shinizumi, Narita-shi, Chiba Nogehira Industrial Park Applied Materials Japan Co., Ltd. F term (reference) 3C034 AA13 BB73 BB93 CA02 CA05 CA13 CA15 CA22 CB01 DD07 DD10 3C058 AA07 AB04 AC02 BA02 BA09 BB09 BC02 CB01 DA17
Claims (6)
研磨時間及び研磨後の状態を測定する測定手段と、 該測定手段で得られたデータと前記被研磨体の最適研磨
状態を表すデータとに基づいて、予め設定された計算式
に従って、前記被研磨体の最適研磨時間を計算するプロ
セッサと、 新たに研磨される被研磨体を前記プロセッサにより計算
された最適研磨時間だけ研磨するように前記研磨手段を
制御する制御手段とを備えた研磨装置。A polishing means for polishing an object to be polished; a state before polishing of the object to be polished by the polishing means;
Measuring means for measuring a polishing time and a state after polishing; and, based on data obtained by the measuring means and data representing an optimum polishing state of the object to be polished, according to a preset calculation formula, A polishing apparatus, comprising: a processor for calculating an optimum polishing time for a body; and a control means for controlling the polishing means so as to polish a body to be newly polished for the optimum polishing time calculated by the processor.
研磨時間及び研磨後の厚さを測定する測定手段と、 該測定手段で得られたデータと前記被研磨体の厚さの目
標値とに基づき前記被研磨体の最適研磨時間を計算する
プロセッサと、 新たに研磨される被研磨体を前記プロセッサにより計算
された最適研磨時間だけ研磨するように前記研磨手段を
制御する制御手段とを備え、 前記プロセッサは、前記被研磨体の研磨前の厚さ、研磨
時間、研磨後の厚さ及び前記被研磨体の厚さの目標値を
含むパラメータと演算子とを用いて任意に設定された計
算式に従って、前記被研磨体の最適研磨時間を計算する
研磨装置。2. A polishing means for polishing an object to be polished, a thickness before polishing of the object to be polished by the polishing means,
A measuring means for measuring a polishing time and a thickness after polishing; and a processor for calculating an optimum polishing time of the object to be polished based on data obtained by the measuring means and a target value of the thickness of the object to be polished. Control means for controlling the polishing means so that the object to be polished is polished for the optimum polishing time calculated by the processor, wherein the processor has a thickness before polishing of the object to be polished. Calculate the optimal polishing time of the object to be polished according to a calculation formula arbitrarily set using parameters and operators including a polishing time, a thickness after polishing, and a target value of the thickness of the object to be polished. Polishing equipment.
前の厚さ、研磨時間及び研磨後の厚さから前記被研磨体
の研磨レートを計算し、該研磨レートを用いて前記被研
磨体の最適研磨時間を計算する請求項１又は２記載の研
磨装置。3. The processor calculates a polishing rate of the object to be polished from a thickness before polishing, a polishing time, and a thickness after polishing of the object to be polished, and uses the polishing rate to calculate the polishing rate of the object to be polished. 3. The polishing apparatus according to claim 1, wherein an optimum polishing time is calculated.
ステップと、 該研磨ステップで研磨される被研磨体の研磨前の状態、
研磨時間及び研磨後の状態を測定する測定ステップと、 該測定ステップで得られたデータと前記被研磨体の最適
研磨状態を表すデータとに基づいて、予め設定された計
算式に従って、前記被研磨体の最適研磨時間を計算する
計算ステップと、 新たに研磨される被研磨体を、前記プロセッサにより計
算された最適研磨時間だけ研磨するように、前記研磨手
段を制御する制御ステップとを含む研磨方法。4. A polishing step of polishing an object to be polished by a polishing means, a state before polishing of the object to be polished in the polishing step,
A measuring step of measuring a polishing time and a state after polishing; and, based on data obtained in the measuring step and data representing an optimum polishing state of the object to be polished, according to a preset calculation formula, A polishing step including a calculating step of calculating an optimum polishing time of a body, and a control step of controlling the polishing means so as to polish a newly polished body to be polished by the optimum polishing time calculated by the processor. .
ステップと、 該研磨ステップにより研磨される被研磨体の研磨前の厚
さ、研磨時間及び研磨後の厚さを測定する測定ステップ
と、 該測定ステップで得られたデータと前記被研磨体の厚さ
の目標値とに基づき前記被研磨体の最適研磨時間を計算
する計算ステップと、 新たに研磨される被研磨体を、前記計算ステップにより
計算された最適研磨時間だけ研磨するように、前記研磨
手段を制御する制御ステップとを含み、 前記計算ステップでは、前記被研磨体の研磨前の厚さ、
研磨時間、研磨後の厚さ及び前記被研磨体の厚さの目標
値を含むパラメータと演算子とを用いて任意に設定され
た計算式に従って、前記被研磨体の最適研磨時間を計算
する研磨方法。5. A polishing step of polishing an object to be polished by a polishing means, a measuring step of measuring a thickness before polishing, a polishing time, and a thickness after polishing of the object to be polished by the polishing step; A calculating step of calculating an optimum polishing time of the object to be polished based on the data obtained in the measuring step and a target value of the thickness of the object to be polished; Controlling the polishing means so as to polish only for the optimum polishing time calculated by :, in the calculating step, the thickness of the object to be polished before polishing,
Polishing for calculating the optimum polishing time of the object to be polished according to a calculation formula arbitrarily set using parameters and operators including a polishing time, a thickness after polishing and a target value of the thickness of the object to be polished. Method.
磨前の厚さ、研磨時間及び研磨後の厚さから前記被研磨
体の研磨レートを計算し、該研磨レートを用いて前記被
研磨体の最適研磨時間を計算する請求項４又は５記載の
研磨方法。6. The polishing step comprises calculating a polishing rate of the object to be polished from a thickness before polishing, a polishing time and a thickness after polishing of the object to be polished, and using the polishing rate to calculate the polishing rate of the object to be polished. The polishing method according to claim 4 or 5, wherein an optimum polishing time for the body is calculated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000334745A JP4827292B2 (en) | 2000-11-01 | 2000-11-01 | Polishing equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000334745A JP4827292B2 (en) | 2000-11-01 | 2000-11-01 | Polishing equipment |
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| Publication Number | Publication Date |
|---|---|
| JP2002154053A true JP2002154053A (en) | 2002-05-28 |
| JP4827292B2 JP4827292B2 (en) | 2011-11-30 |
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|---|---|---|---|
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| JP2020151836A (en) * | 2019-03-22 | 2020-09-24 | 株式会社Sumco | Work-piece both-surface polishing method and work-piece both-surface polishing device |
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