JP4823248B2 - Nonvolatile semiconductor memory device and manufacturing method thereof - Google Patents

Description

  The present invention relates to a nonvolatile semiconductor memory device and a method for manufacturing the same, and more particularly to a structure of an element isolation insulating film that partitions an element formation region.

  In a so-called floating gate type electrically rewritable nonvolatile semiconductor memory device (EEPROM), an increase in capacitive coupling between floating gates is a problem. In order to solve this problem, for example, Patent Document 1 discloses a technique in which a control gate is deeply buried between floating gates by etching a device isolation insulating film formed between floating gates to form a recess. Is known by.

This technique will be described with reference to FIG. The semiconductor substrate 11 has a plurality of element formation regions 12. Adjacent element formation regions 12 are partitioned by element isolation trenches 13, and element isolation insulating films 14 for electrically isolating memory cells formed in the element formation regions 12 are formed in the element isolation trenches 13. Is embedded. On the element formation region 12, a lower gate insulating film (tunnel insulating film) 21, a floating gate 22, a second gate insulating film (ONO film) 23, a polysilicon film 26a, and a tungsten silicide film (WSi film) are sequentially formed from the bottom. ) 26b is formed, whereby one memory cell is formed. A recess 14v is formed by etching in the central portion of the element isolation insulating film 14, and thereby the control gate 26 is buried in the recess 14v. Thereby, capacitive coupling between the floating gates 22 can be suppressed.
JP 2001-168306 A (paragraph [0032] to paragraph [0041], FIG. 17 etc.)

  However, in the technique of Patent Document 1, in order to form the recess 14v in the element isolation insulating film 14, the element isolation insulating film 14 must be etched by forming a spacer mask on the side wall of the floating gate 22. For this reason, there has been a problem that the number of manufacturing steps increases by the spacer mask step. In particular, when the width of the element isolation insulating film 14 is reduced due to the progress of miniaturization, it is difficult to embed the control gate 26 in the recess 14v, and it is difficult to suppress capacitive coupling between the floating gates 22. There was a problem.

  The present invention has been made in view of such a problem, and an object of the present invention is to easily and surely form a recess formed on an upper part of an element isolation insulating film and effectively prevent capacitive coupling of a floating gate. It is what.

To achieve the above object, a nonvolatile semiconductor memory device according to the present invention includes a semiconductor substrate having an element formation region partitioned by element isolation trenches, a first gate insulating film formed on the element formation region, A floating gate formed on the first gate insulating film; a recess formed in the element isolation trench; and an uppermost portion of both ends at a position lower than an uppermost portion of the floating gate; A first element isolation insulating film; a second element isolation insulating film formed in the recess, the uppermost portion of the upper surface being located at a position lower than the uppermost portions at both ends of the first element isolation insulating film; and the floating gate some of the upper and side surfaces of the formed continuous to the upper portion of both ends surfaces and the second element isolation insulating film of said first element isolation insulating film, and the both end portions of the first element isolation insulating film Via a second gate insulating film formed on the side surface of the floating gate, the second gate insulating film over the upper portion of said floating gate and said first and controls that are formed on top of the second element-separating insulator film And a gate.

  In this nonvolatile semiconductor memory device, the uppermost portion of the first element isolation insulating film can be configured to exist at a position lower than the uppermost portion of the floating gate. The second element isolation insulating film may have a higher etching rate than the first element isolation insulating film under predetermined etching conditions.

To achieve the above object, a method for manufacturing a nonvolatile semiconductor memory device according to the present invention includes a step of forming a floating gate material film on a conductor substrate, and an element formation region in which the nonvolatile semiconductor element is formed, and the device isolation trench forming step of forming an isolation trench in the floating gate material layer and in said semiconductor substrate, a first element isolation insulating film, the first recess of the first element isolation insulating film in the shallow trench isolation A first element isolation insulating film forming step formed with a thickness to be formed, and a second element isolation insulating film for electrically isolating the element formation region so as to fill the first depression. The second element isolation insulating film forming step, the planarization step of flattening the first element isolation insulating film and the second element isolation insulating film, and the etching rate of the second element isolation insulating film are more 1 element The first element isolation insulating film and the second element isolation insulating film are etched under a condition higher than the etching rate of the isolation insulating film, and the height of the uppermost portions at both ends of the first element isolation insulating film is the second element higher than the height of the upper surface of the isolation insulating film, and an etching step of forming a second recess portion constituted by in the lower top position of the floating gate material layer, an upper surface of the floating gate material layer and An upper gate insulating film formed on a side surface of the floating gate material film through the both end portions of the first element isolation insulating film in the side surface exposed from the first element isolation insulating film and the second depression; And a control gate material film forming process for forming a control gate material film on the upper gate insulating film.

  According to the present invention, since the uppermost portions at both ends of the first element isolation insulating film are located higher than the uppermost portion of the second element isolation insulating film, the control gate is thereby floated. While being buried to a deep position between the gates, this effectively suppresses the capacitive coupling between the floating gates, while the uppermost portions at both ends of the first element isolation insulating film reduce the breakdown voltage between the control gate and the semiconductor substrate. Kept high.

  Next, a first embodiment of the present invention will be described in detail with reference to the drawings.

[First Embodiment]
FIG. 1 is a layout of a cell array of a NAND type EEPROM according to the first embodiment of the present invention. FIGS. 2A and 2B are sectional views taken along lines AA and BB in FIG. 1, respectively.

  As shown in FIG. 1, the memory cell array of the NAND type EEPROM has a configuration in which a plurality of memory cells 2 and a select transistor 3 are connected in series along a bit line 1. The plurality of memory cells 2 arranged in the word line direction are connected by a common control gate line (word line) 4, and the selection transistor 3 is connected by a common selection gate line 5. A bit line 1 is connected to each select transistor 3 via a bit line contact 6.

  As shown in FIG. 2A, the memory cell array has an element formation region 12 formed on a silicon substrate 11, and the element formation region 12 is partitioned by an element isolation groove 13. The gate of the memory cell 2 and the gate of the selection transistor 3 are formed on the element formation region 12. As shown in FIG. 2B, the memory cells 2 adjacent in the direction of the bit line 1 share the source-drain diffusion layer 14a on the silicon substrate 11. Similarly, the memory cell 2 and the select transistor 3 adjacent in the direction of the bit line 1 share the source-drain diffusion layer 14 b on the substrate 11. Further, the select transistors 3 facing each other across the bit line contact 6 share the source-drain diffusion layer 14 c on the substrate 11.

  In each element formation region 2, a floating gate 22a is formed via a first gate insulating film 21 (lower gate insulating film) which is a tunnel insulating film. A control gate 26 is formed on the floating gate 22a via a second gate insulating film 23 (upper gate insulating film). The control gate 26 has a two-layer structure of a polycrystalline silicon film 26a and a tungsten silicide (WSi) film 26b. The material of the films 26a and 26b is not limited to polycrystalline silicon or tungsten silicide, and for example, a polysilicon silicide film or the like can be used. Since the floating gate 22a, the first gate insulating film 21, and the element isolation trench 13 are simultaneously patterned as will be described later, they are aligned with each other on the side surfaces.

  An insulating film 13b is formed on the inner wall (bottom surface and side surface) of the element isolation trench 13, and an insulating film 22b is formed on the side surface of the floating gate 22a. An element isolation insulating film 30 is formed in the element isolation trench 13. The element isolation insulating film 30 is formed of a first element isolation insulating film 31 and a second element isolation insulating film 32. As shown in FIG. 2A, the first element isolation insulating film 31 includes extending portions 31e that are formed along the inner wall in the element isolation trench 13 on both the left and right sides, and are in contact with the insulating films 13b and 22b. The first element isolation insulating film 31 has a recess 31v at the center thereof, and is formed to have a concave shape in which the height of the extending portions 31e on the left and right sides is the highest. The upper end portion of the extending portion 31e is located above the lower surface of the floating gate 22 and below the upper surface of the floating gate 22a, and is formed so as to be adjacent to the floating gate 22a through the insulating film 22b.

  The second element isolation insulating film 32 is formed so as to substantially fill the recess 31v of the first element isolation insulating film 31. However, the uppermost portion of the first element isolation insulating film 31 (the upper end of the extending portion 31e) is located higher than the uppermost portion (the upper surface 32a) of the second element isolation insulating film 32. Thereby, the element isolation insulating film 30 is provided with a recess 35 in which the control gate 26 is to be embedded.

  As shown in FIG. 2A, the control gate 26 is continuously patterned across the plurality of element formation regions 12 in the direction orthogonal to the bit lines, and constitutes a control gate line (word line) 4. As described above, the height of the extending portion 31e is lower than the upper surface of the floating gate 22a, and the upper surface 32a is lower than that. Therefore, the control gate 26 is formed so as to be buried not only in the upper part of the floating gate 22 but also in the recess 35 between the floating gates 22a. Thereby, capacitive coupling between the adjacent floating gates 22a can be suppressed.

  As shown in FIG. 2B, the selection transistor 3 includes a gate 22a ', an insulating film 23', and a selection gate line 26 '(films 26a' and 26b '). The gate 22 a ′, the insulating film 23 ′, and the films 26 a ′ and 26 b ′ are each formed of the same material film as each part 22 a, 23, 26 a and 26 b of the memory cell 2. However, the selection gate line 26 'is directly connected (short-circuited) to the gate 22a' by partially removing the second gate insulating film 23 '.

  A specific manufacturing process of the NAND type EEPROM according to this embodiment will be described with reference to FIGS.

  First, as shown in FIG. 3, a 10 nm silicon oxide film is formed as a first gate insulating film 21 on a silicon substrate 11, and a low pressure chemical vapor deposition (Low Pressure Chemical Vapor) is formed thereon as a material film for a floating gate 22a. A polysilicon film 22 having a thickness of about 160 nm is deposited by a deposition method, and a silicon nitride film 27 having a thickness of about 90 nm is formed by a low pressure CVD method as a stopper film in a chemical mechanical polishing (CMP) process. Subsequently, a photoresist pattern 28 is formed on the silicon nitride film 27 by using a photolithography technique.

  Next, as shown in FIG. 4, the silicon nitride film 27, the polysilicon film 22, the first gate insulating film 21, and the silicon substrate 11 are etched using the photoresist pattern 28 as an etching mask. As a result, an element formation region 12 in which the memory cell 2 is formed and an element isolation groove 13 partitioning the element formation region 12 are formed. As an example, the element isolation trench has a depth of about 220 nm from the upper surface of the polysilicon film 22 and a width of about 70 nm at the top. Since patterning is performed using the same photoresist pattern 28 as a mask, the side surfaces of the polysilicon film 22, the first gate insulating film 21, and the element formation region 12 are aligned with each other. Thereafter, in order to remove damage caused by etching, a silicon oxide film 22b and a silicon oxide film 13b are respectively formed on the side surface of the polysilicon film 22 and the side surfaces and bottom surface of the element isolation trench 13 by thermal oxidation.

  Next, as shown in FIG. 5, the silicon oxide film as the first element isolation insulating film 31 to be embedded in the element isolation trench 13 is not only in the element isolation trench 13 but also in the element formation region 12 by plasma CVD. It is deposited on the entire surface including the silicon nitride film 27 formed thereon. The thickness of the first element isolation insulating film 31 is set so that the element isolation groove 13 is not formed in a flat region (not shown) so that the element isolation groove 13 is not filled flat and a recess 31v is formed in the element isolation groove 13. The width is less than ½. In this embodiment, since the width of the element isolation trench 13 is 70 nm, the thickness of the first element isolation insulating film 31 is set to about 20 nm in a flat region (not shown).

  Next, as shown in FIG. 6, a second element isolation insulating film 32 is deposited on the first element isolation insulating film 31 so that the recess 31v is filled without any gap. In the deposition of the second element isolation insulating film 32, polysilazane is applied to the entire surface of the first element isolation insulating film 31 including the inside of the recess 31v, and further heat-treated in a steam-added oxidizing atmosphere to densify the polysilazane. It is done by the method. According to this method, even if the hollow part 31v is narrow and deep, the hollow part 31v can be filled easily.

  Next, as shown in FIG. 7, the first element isolation insulating film 31 and the second element isolation insulating film 32 are removed and planarized to the upper surface of the silicon nitride film 27 by CMP using the silicon nitride film 27 as a stopper film. To do.

  Then, as shown in FIG. 8, the silicon nitride film 27 is removed by phosphoric acid treatment at 150 ° C., and the upper surface of the polysilicon film 22 is exposed.

  Thereafter, as shown in FIG. 9, a part of the first element isolation insulating film 31 and the second element isolation insulating film 32 is removed by etching to form a recess 35 between the polysilicon films 22. For the etching, selective etching is used in which the etching rate of the polysilazane constituting the second element isolation insulating film 32 is higher than the etching rate of the silicon oxide film constituting the first element isolation insulating film 31. In this embodiment mode, etching is performed using buffered hydrofluoric acid (a mixed liquid of hydrofluoric acid and ammonium fluoride). By using buffer hydrofluoric acid, the ratio (selectivity) of the polysilazane etching rate to the etching rate of the silicon oxide film can be increased. Hydrofluoric acid vapor may be used instead of buffer hydrofluoric acid.

Etching proceeds gradually from above the insulating films 31 and 32, but due to the difference in etching rate, the height of the extending portion 31e of the first element isolation insulating film 31 is higher than the height of the upper surface 32a of the second element isolation insulating film 32. Higher than that. Thus, the upper end of the extending portion 31e is located between the upper end and the lower end of the polysilicon film 22 (that is, the side surface of the polysilicon film 22 is partially exposed), and the upper surface 32a is slightly above the first gate insulating film 21. Etching is continued until Note that the difference in height between the upper surface 32a and the upper end of the extending portion 31e can be changed by adjusting the etching conditions.
As described above, since the upper end of the extending portion 31e is positioned higher than the upper surface 32a of the second element isolation insulating film 32, capacitive coupling between the floating gates 22a is suppressed, and the control gate 26 and the semiconductor substrate are suppressed. 11 can be kept high.

  Next, as shown in FIG. 10, as the second gate insulating film 23, an ONO film having a predetermined thickness is formed by a low pressure CVD method, and the upper and side surfaces of the polysilicon film 22, as well as the first element isolation insulating film 31 and the first Formed on the two-element isolation insulating film 32 (that is, the inner surface of the recess 35). The ONO film is an insulating film having a three-layer structure formed by sequentially laminating a first silicon oxide film, a silicon nitride film, and a second silicon oxide film. In the region where the select transistor 3 is formed, the second gate insulating film 23 is partially removed so that the polysilicon film 22 and the control gate 26 are short-circuited.

  Subsequently, as shown in FIG. 11, a polycrystalline silicon film 24 and a tungsten silicide film 25 are sequentially formed on the second gate insulating film 23 as materials for the control gate 26. Specifically, a polysilicon film 24 having a thickness of about 80 nm doped with phosphorus (P) is formed by low pressure CVD, and then a tungsten silicide film 25 having a thickness of about 85 nm is formed by sputtering.

  Next, as shown in FIG. 12A, a mask pattern 44 of a silicon nitride film is formed. The mask pattern 44 is formed by forming a silicon nitride film having a thickness of about 300 nm on the tungsten silicide film 25 by low pressure CVD, and further forming a resist pattern (not shown) on the silicon nitride film. This is formed by etching the silicon nitride film using as a mask. The mask pattern 44 extends in a direction perpendicular to the extending direction of the element isolation groove 13. Subsequently, the tungsten silicide film 25, the polysilicon film 24, the second gate insulating film 23, and the polysilicon film 22 are patterned using the mask pattern 44 as an etching mask. Thereby, as shown in FIG. 12B, the polysilicon film 22 is formed into the shape of the floating gate 22a of each memory cell 2, and the polysilicon films 24 and 25 are formed into the shapes of the films 26a and 26b forming the control gate 26. To be molded.

  Thereafter, removal of the silicon nitride film 44 by phosphoric acid treatment, formation of source-drain diffusion layers 14a, 14b and 14c by ion implantation and thermal diffusion, formation of the interlayer insulating film 41 by low pressure CVD, and formation of the bit line 1 are performed. As a result, a NAND-type EEPROM cell array as shown in FIGS. 1, 2A and 2B is obtained.

  Thus, in the present embodiment, the second element isolation insulating film 32 that also becomes the element isolation insulating film 30 is formed in the recess 31v of the first element isolation insulating film 31 that becomes the element isolation insulating film 30. Then, a part of the first element isolation insulating film 31 and a part of the second element isolation insulating film 32 are removed under an etching condition in which the etching rate of the film 32 is higher than that of the film 31, thereby forming the recess 35. Is forming. The recess 35 is formed in a self-aligned manner due to the difference in etching rate between the films 31 and 32. That is, in this embodiment, it is not necessary to form a spacer mask on the side wall of the polysilicon film 22 in order to form the recess 35, so that the manufacturing process can be simplified. Further, since the lateral thickness of the extending portion 31 e is small, the width of the concave portion 35 can be made substantially the same as the width of the element isolation groove 35. For this reason, even if the width of the element isolation groove 35 is reduced due to the progress of miniaturization, the width of the concave portion 35 is made sufficiently wide, so that the control gate 26 can be reliably embedded in the concave portion 35. Therefore, capacitive coupling between the floating gates 22a can be effectively suppressed. Further, the width and depth of the recess 35 can be easily and reliably controlled by adjusting the difference in etching rate (selection ratio). Further, it is assumed that the extending portions 31e at both ends of the first element isolation film 31 protrude from the second element isolation insulating film 32, thereby deepening the recess 35 and deeply embedding the control gate 26. However, the withstand voltage between the control gate 26 and the semiconductor substrate 11 is kept high.

  A cross-sectional structure of the selection transistor 3 (cross-section CC in FIG. 1) will be described with reference to FIG. Unlike the memory cell 2, the select transistor 3 has a structure in which the polysilicon film 22 ′ and the control gate 26 ′ are short-circuited by partially removing the second gate insulating film 23. The element isolation trench 13 is continuous from the formation region of the memory cell 2, and the element isolation insulating film 30 including the first element isolation insulating film 31 and the second element isolation insulating film 32 is also continuous from the formation region of the memory cell 2. Of the same structure.

  A configuration example of a transistor constituting the peripheral circuit of the NAND type EEPROM of this embodiment will be described with reference to FIG. The first gate insulating film 21p, the polysilicon film 22p, the second gate insulating film 23p, and the polysilicon layer 26p, which are the constituent elements of the gates of the transistors constituting the peripheral circuit, are connected to the memory cell units 21, 22a, 23, and It is also possible to form the same film as that of H.26. Similarly to the selection transistor 3, the second gate insulating film 23p is partially removed by etching or the like, whereby the polysilicon layer 26p and the polysilicon layer 22p are short-circuited. In addition, the element isolation insulating film 30 formed in the element isolation trench 13 ′ that partitions the element region 12 ′ of the transistor constituting the peripheral circuit is formed at the same time as that of the memory cell area, and the structure thereof is the same as that in the memory cell area. Similarly to the above, the first element isolation insulating film 31 is formed in a concave shape, and the second element isolation insulating film 32 is formed in the concave depression.

[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to the drawings.

  The layout of the cell array of the NAND type EEPROM of this embodiment is the same as that shown in FIG. 1, but the AA and BB cross-sectional views are shaped as shown in FIGS. 15A and 15B. . In the first embodiment, the side surfaces of the floating gate 22a, the first gate insulating film 21, and the element isolation trench 13 are aligned with each other. However, in this embodiment, these side surfaces are not aligned. . However, the positional relationship between the extending portion 31e of the element isolation insulating film 31 and the upper surface 32a of the element isolation insulating film 32 can be made the same as in the first embodiment.

  Hereinafter, a manufacturing process of the NAND type EEPROM according to the second embodiment will be described with reference to FIGS.

  First, as shown in FIG. 16, a silicon oxide film 50 having a thickness of about 10 nm is formed as a buffer oxide film on the silicon substrate 11 by a thermal oxidation method, and a low pressure CVD method is used as a stopper film in the CMP process thereon. Thus, a silicon nitride film 51 having a thickness of about 90 nm is deposited. Subsequently, a photoresist pattern 52 is formed on the silicon nitride film 51 by using a photolithography technique.

  Next, as shown in FIG. 17, the silicon nitride film 51, the silicon oxide film 50, and the silicon substrate 11 are etched using the photoresist pattern 52 as an etching mask. As a result, an element formation region 12 in which the memory cell 2 is formed and an element isolation groove 13 partitioning the element formation region 12 are formed. Thereafter, in order to remove damage caused by etching, a silicon oxide film 13 b is formed by a thermal oxidation method and on the side surface and the bottom surface of the element isolation trench 13.

  Thereafter, as shown in FIG. 18, a silicon oxide film as the first element isolation insulating film 31 to be embedded in the element isolation trench 13 is deposited on the entire surface including the inside of the element isolation trench 13 by plasma CVD. The thickness is set such that the recess 31v is formed (for example, less than half the width of the element isolation groove 13), as in the first embodiment.

  Next, as shown in FIG. 19, a second element isolation insulating film 32 is deposited on the entire surface of the first element isolation insulating film 31 so as to fill the recess 31 v with no gap. As in the first embodiment, the second element isolation insulating film 32 is formed by (1) a polysilazane coating process and (2) a polysilazane densification process by heat treatment in a steam-added oxidizing atmosphere. be able to.

  Subsequently, as shown in FIG. 20, the first element isolation insulating film 31 and the second element isolation insulating film 32 are removed and planarized to the upper surface of the silicon nitride film 51 by CMP using the silicon nitride film 51 as a stopper film. To do. Thereafter, as shown in FIG. 21, a part of the first element isolation insulating film 31 and the second element isolation insulating film 32 is removed by etching. As in the first embodiment, the ratio of the etching rate of polysilazane (the material forming the second element isolation insulating film 32) to the etching rate of the silicon oxide film (the material forming the first element isolation insulating film 31) ( Increase the selection ratio. Accordingly, the upper end of the extending portion 31 e that is the uppermost portion of the first element isolation insulating film 31 is positioned higher than the upper surface 32 a of the second element isolation insulating film 32. In this way, the etching is continued until the upper end of the extending portion 31e is located between the upper end and the lower end of the polysilicon film 22 and the upper surface 32a is slightly above the first gate insulating film 32a.

  Subsequently, as shown in FIG. 22, the silicon nitride film 51 and the silicon oxide film 50 are removed by etching to expose the silicon substrate 11 in the element forming region 12, and the exposed surface is heated by a thermal oxidation method. A first gate oxide film 21 is formed. Thereafter, a polysilicon film 22 to be the floating gate 22a is deposited on the entire surface, and the polysilicon film 22 on the element isolation insulating films 31 and 32 is removed by using a photolithography method.

  Next, as shown in FIG. 23, as the second gate insulating film 23, an ONO film having a predetermined thickness is formed by a low pressure CVD method, an upper surface and a side surface of the polysilicon film 22, the first element isolation insulating film 31, and the first gate insulating film 23. A two-element isolation insulating film 32 is formed. In the region where the selection transistor 3 is to be formed, the second gate insulating film 23 is partially removed so that the polysilicon film 22 and the control gate 26 are short-circuited.

  Subsequently, as shown in FIG. 24, a polycrystalline silicon film 24 and a tungsten silicide film 25 are sequentially formed on the second gate insulating film 23 as materials for the control gate 26.

  Next, as shown in FIGS. 25A and 25B, a mask pattern 44 of a silicon nitride film extending in a direction perpendicular to the extending direction of the element isolation trench 13 is formed, and the tungsten silicide film is formed using the mask pattern 44 as an etching mask. 25, the polysilicon film 24, the second gate insulating film 23, and the polysilicon film 22 are patterned. Thereby, the polysilicon film 22 is formed into the shape of the floating gate 22 a of each memory cell 2, and the polysilicon films 24 and 25 are formed into the shapes of the films 26 a and 26 b forming the control gate 26.

  Thereafter, the mask pattern 44 is removed by phosphoric acid treatment, the source-drain diffusion layers 14a, 14b and 14c are formed by ion implantation and thermal diffusion, the interlayer insulating film 41 is formed by the low pressure CVD method, the bit line 1 is formed, etc. As a result, a NAND-type EEPROM cell array as shown in FIGS. 15A and 15B is obtained.

  A cross-sectional structure (cross-section CC in FIG. 1) of the selection transistor 3 will be described with reference to FIG. In this embodiment, as in the first embodiment (see FIG. 13), the select transistor 3 has a structure in which the polysilicon film 22a 'and the control gate 26' are short-circuited. The element isolation trench 13 is continuous with the formation region of the memory cell 2, and the element isolation insulating film 30 including the first element isolation insulating film 31 and the second element isolation insulating film 32 is also the memory cell 2. It has the same structure continuous from the formation region.

  A configuration example of a transistor constituting the peripheral circuit of the NAND type EEPROM of this embodiment will be described with reference to FIG. The first gate insulating film 21p, the polysilicon film 22 ', and the polysilicon layer 26', which are components of the gates of the transistors constituting the peripheral circuit, may be formed of the same film as the respective parts 22a and 26 of the memory cell 2. it can. Further, the element isolation insulating film 30 formed in the element isolation trench 13 ′ that partitions the element region 12 ′ of the transistor constituting the peripheral circuit is formed at the same time as that of the memory cell area, and the structure thereof is the same as that of the memory cell area. Similar to the structure, the first element isolation insulating film 31 is formed in a concave shape, and the second element isolation insulating film 32 is formed in the concave depression.

  Although the embodiments of the invention have been described above, the present invention is not limited to these embodiments, and various modifications, additions, and substitutions can be made without departing from the spirit of the invention. For example, in the above embodiment, the oxide films 22b and 13b are formed on the side surface of the polysilicon film 22 and the side surface and bottom surface of the element isolation trench 13 by the thermal oxidation method. This step can be omitted. Conversely, after forming the oxide films 22b and 13b, as shown in FIG. 28, an HTO film 45 is further formed on the oxide film 13b, and a first element isolation insulating film 31 is formed on the HTO film 45. You may do it.

  In the above embodiment, the upper surface 32a of the second element isolation insulating film 32 is located higher than the first gate insulating film 21, but as shown in FIG. It is also possible to adopt a configuration in which the first gate insulating film 21 is present at a lower position. Thereby, the possibility of capacitive coupling between the floating gates 22a can be further reduced.

  In the case of the configuration of FIG. 29, the control gate 26 and the silicon substrate 11 are brought closer to each other as compared with the above embodiment. However, since at least the extending portion 31e of the first element isolation insulating film 31 and the second gate insulating film 23 exist between the two, the configuration shown in FIG. 29 also provides a gap between the control gate 26 and the silicon substrate 11. The withstand voltage is kept high enough.

  In the above embodiment, as shown in FIG. 2A and the like, the entire recess 35 is filled with the control gate 26. However, the control gate 26 may be formed only on the inner surface of the recess 35 and the recess 35 may be partially filled. Even with this configuration, it is possible to suppress capacitive coupling between adjacent floating gates 22a.

  In the above-described embodiment, an insulating film formed by the CVD method is used as the first element isolation insulating film 31, and a film densified with polysilazane is used as the second element isolation insulating film 32. However, this is only an example. If the etching rate of the second element isolation insulating film 32 is higher than that of the first element isolation insulating film 31, various other materials can be used as the materials of the films 31 and 32. It is possible to select.

  Further, the present invention is applicable not only to a nonvolatile semiconductor memory device in which one memory cell stores 1-bit data, but also to a nonvolatile semiconductor memory device in which one memory cell stores a plurality of bits of data. Not too long.

2 is a layout of a NAND type EEPROM cell array according to the first embodiment of the present invention; FIG. 2 is a cross-sectional view taken along the line AA of FIG. FIG. 2 is a cross-sectional view taken along the line B-B in FIG. A specific manufacturing process of the NAND type EEPROM according to the first embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the first embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the first embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the first embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the first embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the first embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the first embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the first embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the first embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the first embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the first embodiment will be described. FIG. 2 is a cross-sectional view taken along the line C-C in FIG. 1 and shows a structure of a selection transistor of the NAND type EEPROM according to the first embodiment. 2 shows a configuration example of a transistor that forms a peripheral circuit of the NAND-type EEPROM according to the first embodiment. 2 shows a structure of a memory cell 2 and a select transistor 3 of a NAND type EEPROM according to a second embodiment of the present invention (cross-sectional view taken along line AA in FIG. 1). 2 shows a structure of a memory cell 2 and a select transistor 3 of a NAND type EEPROM according to a second embodiment of the present invention (cross-sectional view taken along line BB in FIG. 1). A specific manufacturing process of the NAND type EEPROM according to the second embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the second embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the second embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the second embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the second embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the second embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the second embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the second embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the second embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the second embodiment will be described. A specific manufacturing process of the NAND type EEPROM according to the second embodiment will be described. The structure of the selection transistor of the NAND type EEPROM of the second embodiment is shown. An example of the configuration of a transistor that forms a peripheral circuit of a NAND-type EEPROM according to the second embodiment will be described. One of the modifications of 1st and 2nd embodiment is shown. One of the modifications of 1st and 2nd embodiment is shown. 1 shows a configuration of a NAND type EEPROM according to the prior art.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Bit line, 2 ... Memory cell, 3 ... Selection transistor, 4 ... Control gate line (word line), 5 ... Selection gate line, 6 ... Bit line contact, 11 ...... Silicon substrate, 12 ... element forming region, 13 ... element isolation trench, 13b ... insulating film, 14a-14c ... source-drain diffusion layer, 21 ... first gate insulating film 22 ... Polysilicon film, 22a ... Floating gate, 22b ... Insulating film, 23 ... Second gate insulating film, 26 ... Control gate, 26a ... Polysilicon film, 26b ..Tungsten silicide film (WSi film) 27... Silicon nitride film 28... Photoresist pattern 30... Element isolation insulating film 31. v: a depression of the first element isolation insulating film 31, 31e: an extension of the first element isolation insulating film 31, 32: a second element isolation insulating film, 32a: a second element isolation insulation Upper surface of the film, 35... Recess, 41... Interlayer insulating film, 44... Mask pattern, 45 .. insulating film (HTO film), 50... Silicon oxide film, 51. Film 52 ... Photoresist pattern.

Claims (5)

A semiconductor substrate having an element formation region partitioned by element isolation grooves;
A first gate insulating film formed on the element formation region;
A floating gate formed on the first gate insulating layer;
A first element isolation insulating film formed in the element isolation trench and having a recess at an upper portion thereof, and an uppermost portion of both end portions being lower than an uppermost portion of the floating gate;
A second element isolation insulating film formed in the recess, the uppermost portion of the upper surface being present at a position lower than the uppermost portions of both ends of the first element isolation insulating film;
A portion of the upper surface and side surface of the floating gate, the surface of both end portions of the first element isolation insulating film, and the upper part of the second element isolation insulating film are formed continuously , and the first element isolation insulating film A second gate insulating film formed on a side surface of the floating gate via both ends ;
A non-volatile semiconductor memory device comprising: a control gate formed above the floating gate and above the first and second element isolation insulating films via the second gate insulating film. The nonvolatile semiconductor memory device according to claim 1, wherein an uppermost portion of the second element isolation insulating film is configured to be higher than a lower surface of the floating gate.   3. The nonvolatile semiconductor memory device according to claim 1, wherein the first element isolation insulating film is a silicon oxide film, and the second element isolation insulating film is a polysilazane film. Forming a floating gate material film on the semiconductor substrate;
An element isolation groove forming step of partitioning an element formation region in which a nonvolatile semiconductor element is formed, and forming an element isolation groove in the floating gate material film and the semiconductor substrate;
The first element isolation insulating film, a first element isolation insulating film forming step of forming a first recess portion thickness such as formed of the first element isolation insulating film in the device isolation trench,
A second element isolation insulating film forming step for forming a second element isolation insulating film for electrically isolating the element formation region so as to fill the first depression;
A planarization step of planarizing the first element isolation insulating film and the second element isolation insulating film;
The first element isolation insulating film and the second element isolation insulating film are etched under the condition that the etching rate of the second element isolation insulating film is higher than the etching rate of the first element isolation insulating film, and the first element isolation insulating film is etched. A second structure configured such that the height of the uppermost part of both ends of the element isolation insulating film is higher than the height of the upper surface of the second element isolation insulating film and lower than the uppermost part of the floating gate material film ; An etching step for forming a recess,
An upper surface of the floating gate material film, a side surface exposed from the first element isolation insulating film, and a side surface of the floating gate material film through the both end portions of the first element isolation insulating film in the second depression. Forming an upper gate insulating film to be formed;
A control gate material film forming step of forming a control gate material film on the upper gate insulating film. A method for manufacturing a nonvolatile semiconductor memory device, comprising: In the etching step for forming the second depression,
5. The method of manufacturing a nonvolatile semiconductor memory device according to claim 4, wherein an upper surface of the second element isolation insulating film is made higher than a lower surface of the floating gate material film.

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