JP4809658B2 - 表示装置及びそれを用いた電子機器 - Google Patents
表示装置及びそれを用いた電子機器 Download PDFInfo
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- JP4809658B2 JP4809658B2 JP2005314045A JP2005314045A JP4809658B2 JP 4809658 B2 JP4809658 B2 JP 4809658B2 JP 2005314045 A JP2005314045 A JP 2005314045A JP 2005314045 A JP2005314045 A JP 2005314045A JP 4809658 B2 JP4809658 B2 JP 4809658B2
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- memory
- conductive layer
- organic compound
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Description
(実施の形態1)
(実施の形態2)
Claims (5)
- 複数の画素を含む画素部と複数のメモリセルを含むメモリセル部を有し、
前記複数の画素はそれぞれ、発光素子を有し、
前記複数のメモリセルはそれぞれ、記憶素子を有し、
前記発光素子と前記記憶素子はそれぞれ、第1の導電層、前記第1の導電層に接する有機化合物層、および前記有機化合物層に接する第2の導電層を有し、
前記画素部と前記メモリセル部は同一の基板上に設けられており、
前記複数の画素はそれぞれ、第1のトランジスタを有し、
前記第1のトランジスタのソース又はドレインの一方は、前記発光素子が含む前記第1の導電層または前記第2の導電層に電気的に接続され、
前記複数のメモリセルはそれぞれ、第2のトランジスタを有し、
前記第2のトランジスタのソース又はドレインの一方は、前記記憶素子が含む前記第1の導電層または前記第2の導電層に電気的に接続されており、
前記画素部と前記メモリセル部に電気的に接続された駆動回路部を有し、
前記駆動回路部は、前記メモリセル部に重なるように設けられていることを特徴とする表示装置。 - 請求項1において、
前記有機化合物層は、光酸発生剤がドーピングされた共役高分子材料、電子輸送材料、ホール輸送材料またはキャリア輸送性材料からなることを特徴とする表示装置。 - 請求項1において、
前記有機化合物層の厚さは、5nm〜60nmであることを特徴とする表示装置。 - 請求項1において、
前記発光素子が含む前記有機化合物層と、前記記憶素子が含む前記有機化合物層は、互いに異なる材料からなることを特徴とする表示装置。 - 請求項1乃至請求項4のいずれか一項に記載の表示装置を用いることを特徴とする電子機器。
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JP2000252373A (ja) * | 1999-03-04 | 2000-09-14 | Toshiba Corp | 不揮発性半導体メモリ、不揮発性半導体メモリを備えた表示装置及びその製造方法 |
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